KR102218552B9 - 박막 형성 방법 및 이를 이용한 비휘발성 메모리 소자의 제조 방법 - Google Patents

박막 형성 방법 및 이를 이용한 비휘발성 메모리 소자의 제조 방법

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Publication number
KR102218552B9
KR102218552B9 KR1020140050744A KR20140050744A KR102218552B9 KR 102218552 B9 KR102218552 B9 KR 102218552B9 KR 1020140050744 A KR1020140050744 A KR 1020140050744A KR 20140050744 A KR20140050744 A KR 20140050744A KR 102218552 B9 KR102218552 B9 KR 102218552B9
Authority
KR
South Korea
Prior art keywords
thin film
memory device
same
nonvolatile memory
film formation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Application number
KR1020140050744A
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English (en)
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KR20150124514A (ko
KR102218552B1 (ko
Inventor
신승철
유진혁
조병하
천민호
황철주
Original Assignee
주성엔지니어링(주)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 주성엔지니어링(주) filed Critical 주성엔지니어링(주)
Priority to KR1020140050744A priority Critical patent/KR102218552B1/ko
Publication of KR20150124514A publication Critical patent/KR20150124514A/ko
Application granted granted Critical
Publication of KR102218552B1 publication Critical patent/KR102218552B1/ko
Publication of KR102218552B9 publication Critical patent/KR102218552B9/ko
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/69—IGFETs having charge trapping gate insulators, e.g. MNOS transistors
    • H10D30/694—IGFETs having charge trapping gate insulators, e.g. MNOS transistors characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10P95/00—
KR1020140050744A 2014-04-28 2014-04-28 박막 형성 방법 및 이를 이용한 비휘발성 메모리 소자의 제조 방법 Active KR102218552B1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020140050744A KR102218552B1 (ko) 2014-04-28 2014-04-28 박막 형성 방법 및 이를 이용한 비휘발성 메모리 소자의 제조 방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020140050744A KR102218552B1 (ko) 2014-04-28 2014-04-28 박막 형성 방법 및 이를 이용한 비휘발성 메모리 소자의 제조 방법

Publications (3)

Publication Number Publication Date
KR20150124514A KR20150124514A (ko) 2015-11-06
KR102218552B1 KR102218552B1 (ko) 2021-02-23
KR102218552B9 true KR102218552B9 (ko) 2024-12-20

Family

ID=54600841

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020140050744A Active KR102218552B1 (ko) 2014-04-28 2014-04-28 박막 형성 방법 및 이를 이용한 비휘발성 메모리 소자의 제조 방법

Country Status (1)

Country Link
KR (1) KR102218552B1 (ko)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102483915B1 (ko) * 2017-10-12 2023-01-04 주성엔지니어링(주) 박막 형성 방법

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101216381B1 (ko) * 2005-12-21 2012-12-28 주성엔지니어링(주) 박막 형성 방법
KR101008982B1 (ko) * 2007-12-21 2011-01-17 주식회사 하이닉스반도체 전하 트랩층을 갖는 불휘발성 메모리소자의 형성방법
KR101863652B1 (ko) * 2012-05-30 2018-06-04 주성엔지니어링(주) 기판 처리 장치 및 기판 처리 방법
KR20140018702A (ko) * 2012-08-03 2014-02-13 주성엔지니어링(주) 박막 트랜지스터 및 그 제조 방법

Also Published As

Publication number Publication date
KR20150124514A (ko) 2015-11-06
KR102218552B1 (ko) 2021-02-23

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