KR102215910B1 - A substrate processing apparatus - Google Patents

Abstract

The present invention relates to a substrate processing apparatus, comprising: a chamber body having a heating member for heating a substrate; and a chamber cover that is opened at a lower portion and combined with the chamber body during processing to form a substrate processing space; The chamber cover includes a side plate forming the substrate processing space, an inlet hole through which air flow is introduced, and an upper plate including an air flow diffusion space for diffusing the introduced air flow, and is provided under the upper plate, and the diffused air flow It includes a porous member uniformly spraying the substrate.

Description

Substrate processing equipment {A SUBSTRATE PROCESSING APPARATUS}

The present invention relates to a substrate processing apparatus, and more particularly, to provide a substrate processing apparatus capable of controlling an airflow in a substrate processing space and preventing warpage of a substrate.

In order to manufacture a semiconductor device, various processes such as cleaning, deposition, photography, etching, and ion implantation are performed. Among these processes, deposition and coating processes are used as a process of forming a film on a substrate. In general, the deposition process is a process of depositing a process gas on a substrate to form a film, and the application process is a process of forming a liquid film by applying a processing liquid on the substrate.

Before and after the film is formed on the substrate, a process of baking the substrate is performed. The baking process is a process of heating a substrate to a process temperature or higher in an enclosed space. The entire area of the substrate is heated to a uniform temperature or the temperature of each area of the substrate is adjusted according to the operator.

Since a metal film, a photoresist, an oxide film, etc. are stacked on only one surface of the substrate during the processing process, warpage of the substrate may occur during the baking process. If the substrate is bent during such a baking process, a process defect may occur. In order to solve the process defect due to the warpage of the substrate, a configuration was developed to correct the warpage of the substrate by providing a vacuum unit for adsorbing the substrate to the bottom surface of the bake on which the substrate is placed.

However, when the vacuum part is not in contact with the substrate during processing, there is a disadvantage in that it is not possible to correct the warpage of the substrate, and according to the warp shape of the substrate, the heater configuration of the heating member is complicated by the vacuum pipe configuration for adsorption of the vacuum part. There is a disadvantage of increasing cost.

In addition, in the above configuration, since the airflow flows in from either the edge or the center, there is a disadvantage that it is difficult to control the yield because the airflow cannot be controlled fluidly according to the process conditions.

An object of the present invention is to provide a substrate processing apparatus capable of controlling an airflow and preventing bending of a substrate at the same time.

A substrate processing apparatus according to an embodiment of the present invention for achieving the above object includes: a chamber body having a heating member for heating a substrate; The lower portion is opened and includes a chamber cover that is coupled to the chamber body during processing to form a substrate processing space, the chamber cover comprising: a side plate forming the substrate processing space; A top plate including an inlet hole through which air flow is introduced and an air flow diffusion space for diffusing the introduced air flow; And a porous member provided under the upper plate and uniformly spraying the diffused airflow onto the substrate.

In addition, in an embodiment, the airflow diffusion space is provided in any one of a center portion, a front portion, and an edge portion of the chamber cover.

In addition, in an embodiment, the diameter size of the porous member is larger than the diameter size of the substrate, and the airflow is sprayed in a larger area than the area on which the substrate is placed.

In addition, in an embodiment, the porous member is formed by stacking at least two sub-porous members having different pore sizes.

In addition, in an exemplary embodiment, the size of the pores may be reduced as the sub-porous member disposed below among the at least two sub-porous members having different pore sizes.

According to an embodiment of the present invention, the airflow of the substrate may be uniformly sprayed onto the substrate by using at least one porous member.

According to an exemplary embodiment of the present invention, it is possible to control the area of the airflow sprayed onto the substrate according to the position of the airflow diffusion space formed in the chamber cover. Warping of the substrate W can be prevented by using a replaceable chamber cover provided with airflow diffusion spaces formed at different positions according to the shape of the substrate being bent during substrate processing.

According to an embodiment of the present invention, since vacuum adsorption is not required for the heating member, the configuration of the heating member is simplified, and thus the manufacturing cost of the heating member can be reduced.

According to an embodiment of the present invention, it is possible to control the airflow and to prevent the substrate from being warped.

1 is a plan view showing a substrate processing facility according to an embodiment of the present invention.
FIG. 2 is a view of the facility of FIG. 1 as viewed from the AA direction.
3 is a view of the facility of FIG. 1 as viewed from the BB direction.
4 is a view of the facility of FIG. 1 as viewed from the CC direction
5A to 5C are views showing cross-sections of various types of the heating unit shown in FIG. 1.
6A to 6C are views showing a part of the chamber cover of the heating unit shown in FIGS. 5A to 5C.
7A to 7B are diagrams showing a configuration in which wafer warpage is prevented in the heating unit.
8A to 8B are views showing structures of different types of porous members.

Hereinafter, exemplary embodiments disclosed in the present specification will be described in detail with reference to the accompanying drawings, but identical or similar elements are denoted by the same reference numerals regardless of reference numerals, and redundant descriptions thereof will be omitted.

The suffixes "module" and "unit" for components used in the following description are given or used interchangeably in consideration of only the ease of preparation of the specification, and do not have meanings or roles that are distinguished from each other by themselves. In addition, in describing the embodiments disclosed in the present specification, when it is determined that a detailed description of related known technologies may obscure the subject matter of the embodiments disclosed in the present specification, the detailed description thereof will be omitted. In addition, the accompanying drawings are for easy understanding of the embodiments disclosed in the present specification, and the technical idea disclosed in the present specification is not limited by the accompanying drawings, and all modifications included in the spirit and scope of the present invention It should be understood to include equivalents or substitutes. Singular expressions include plural expressions unless the context clearly indicates otherwise.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the drawings. It is apparent that the present invention can be embodied in other specific forms without departing from the spirit and essential features of the present invention.

FIG. 1 is a view of the substrate processing facility viewed from the top, FIG. 2 is a view of the facility of FIG. 1 viewed from the AA direction, FIG. 3 is a view of the facility of FIG. 1 viewed from the BB direction, and FIG. 4 is the facility of FIG. Is a view viewed from the CC direction.

1 to 4, the substrate processing facility 1 includes a load port 100, an index module 200, a first buffer module 300, a coating and developing module 400, and a second buffer module 500. ), a pre-exposure processing module 600, and an interface module 700. The load port 100, the index module 200, the first buffer module 300, the coating and developing module 400, the second buffer module 500, the pre-exposure processing module 600, and the interface module 700 Are sequentially arranged in a line in one direction.

Hereinafter, the load port 100, the index module 200, the first buffer module 300, the coating and developing module 400, the second buffer module 500, the pre-exposure processing module 600, and the interface module ( The direction in which 700) is arranged is called the first direction 12, the direction perpendicular to the first direction 12 when viewed from above is called the second direction 14, and the first direction 12 and the second A direction perpendicular to the direction 14 is referred to as a third direction 16.

The substrate W is moved in a state accommodated in the cassette 20. At this time, the cassette 20 has a structure that can be sealed from the outside. For example, as the cassette 20, a front open integrated pod (FOUP) having a door in the front may be used.

Hereinafter, the load port 100, the index module 200, the first buffer module 300, the coating and developing module 400, the second buffer module 500, the pre-exposure processing module 600, and the interface module ( 700) will be described in detail.

The load port 100 has a mounting table 120 on which the cassette 20 in which the substrates W are accommodated is placed. A plurality of mounting tables 120 are provided, and the mounting tables 200 are arranged in a row along the second direction 14. In FIG. 2, four mounting tables 120 were provided.

The index module 200 transfers the substrate W between the cassette 20 placed on the mounting table 120 of the load port 100 and the first buffer module 300. The index module 200 includes a frame 210, an index robot 220, and a guide rail 230. The frame 210 is generally provided in the shape of a rectangular parallelepiped with an empty inside, and is disposed between the load port 100 and the first buffer module 300. The frame 210 of the index module 200 may be provided at a lower height than the frame 310 of the first buffer module 300 to be described later. The index robot 220 and the guide rail 230 are disposed in the frame 210. The index robot 220 is driven in 4 axes so that the hand 221 that directly handles the substrate W can move and rotate in the first direction 12, the second direction 14, and the third direction 16. It has this possible structure. The index robot 220 has a hand 221, an arm 222, a support 223, and a pedestal 224. The hand 221 is fixedly installed on the arm 222. The arm 222 is provided in a stretchable structure and a rotatable structure. The support 223 is disposed along the third direction 16 in its longitudinal direction. The arm 222 is coupled to the support 223 to be movable along the support 223. Support 223 is fixedly coupled to the pedestal 224. The guide rail 230 is provided so that its longitudinal direction is disposed along the second direction 14. The pedestal 224 is coupled to the guide rail 230 so as to be able to move linearly along the guide rail 230. Further, although not shown, a door opener for opening and closing the door of the cassette 20 is further provided on the frame 210.

The first buffer module 300 includes a frame 310, a first buffer 320, a second buffer 330, a cooling chamber 350, and a first buffer robot 360. The frame 310 is provided in the shape of an empty rectangular parallelepiped, and is disposed between the index module 200 and the coating and developing module 400. The first buffer 320, the second buffer 330, the cooling chamber 350, and the first buffer robot 360 are located in the frame 310. The cooling chamber 350, the second buffer 330, and the first buffer 320 are sequentially disposed along the third direction 16 from below. The first buffer 320 is located at a height corresponding to the coating module 401 of the coating and developing module 400 to be described later, and the second buffer 330 and the cooling chamber 350 are applied to a coating and developing module ( It is located at a height corresponding to the developing module 402 of 400). The first buffer robot 360 is positioned to be spaced apart a predetermined distance from the second buffer 330, the cooling chamber 350, and the first buffer 320 and the second direction 14.

The first buffer 320 and the second buffer 330 temporarily store a plurality of substrates W, respectively. The second buffer 330 has a housing 331 and a plurality of supports 332. The supports 332 are disposed in the housing 331 and are provided to be spaced apart from each other along the third direction 16. One substrate W is placed on each of the supports 332. In the housing 331, the index robot 220, the first buffer robot 360, and the developing unit robot 482 of the developing module 402 to be described later attach the substrate W to the support 332 in the housing 331. An opening (not shown) is provided in a direction in which the index robot 220 is provided, a direction in which the first buffer robot 360 is provided, and a direction in which the developing unit robot 482 is provided so as to be carried in or out. The first buffer 320 has a structure substantially similar to that of the second buffer 330. However, the housing 321 of the first buffer 320 has an opening in a direction in which the first buffer robot 360 is provided and in a direction in which the applicator robot 432 positioned in the application module 401 to be described later is provided. The number of supports 322 provided in the first buffer 320 and the number of supports 332 provided in the second buffer 330 may be the same or different.

According to an example, the number of supports 332 provided to the second buffer 330 may be greater than the number of supports 322 provided to the first buffer 320.

The first buffer robot 360 transfers the substrate W between the first buffer 320 and the second buffer 330.

The first buffer robot 360 has a hand 361, an arm 362, and a support 363. The hand 361 is fixedly installed on the arm 362. The arm 362 is provided in a stretchable structure so that the hand 361 is movable along the second direction 14. The arm 362 is coupled to the support 363 so as to be able to move linearly in the third direction 16 along the support 363. The support 363 has a length extending from a position corresponding to the second buffer 330 to a position corresponding to the first buffer 320. The support 363 may be provided longer than this in an upward or downward direction. The first buffer robot 360 may be provided so that the hand 361 is simply driven only in two axes along the second direction 14 and the third direction 16.

Each of the cooling chambers 350 cools the substrate W. The cooling chamber 350 has a housing 351 and a cooling plate 352. The cooling plate 352 has an upper surface on which the substrate W is placed and a cooling means 353 for cooling the substrate W. As the cooling means 353, various methods, such as cooling using cooling water or cooling using a thermoelectric element, may be used. In addition, a lift pin assembly (not shown) for positioning the substrate W on the cooling plate 352 may be provided in the cooling chamber 350. The housing 351 includes the index robot 220 so that the developing unit robot 482 provided to the index robot 220 and the developing module 402 to be described later can carry the substrate W into or out of the cooling plate 352. The provided direction and the developing unit robot 482 have an opening (not shown) in the provided direction. In addition, doors (not shown) for opening and closing the above-described opening may be provided in the cooling chamber 350.

The coating and developing module 400 performs a process of applying a photoresist onto the substrate W before the exposure process and a process of developing the substrate W after the exposure process. The coating and developing module 400 has a substantially rectangular parallelepiped shape. The coating and developing module 400 has a coating module 401 and a developing module 402. The coating module 401 and the developing module 402 are arranged to be partitioned into layers therebetween. According to an example, the application module 401 is located above the developing module 402. The coating module 401 includes a process of applying a photoresist, such as a photoresist, to the substrate W, and a heat treatment process such as heating and cooling of the substrate W before and after the resist coating process. The application module 401 has a resist application unit 410, a bake unit 420, and a transfer chamber 430. The resist application unit 410, the bake unit 420, and the transfer chamber 430 are sequentially disposed along the second direction 14. Accordingly, the resist coating unit 410 and the bake unit 420 are positioned to be spaced apart from each other in the second direction 14 with the transfer chamber 430 interposed therebetween. A plurality of resist coating units 410 are provided, and a plurality of resist coating units 410 are provided in each of the first direction 12 and the third direction 16. In the drawing, an example in which six resist application units 410 are provided is shown. A plurality of bake units 420 are provided in the first direction 12 and the third direction 16, respectively. In the drawing, an example in which six bake units 420 are provided is shown. However, unlike this, the number of bake units 420 may be provided in more or less numbers.

The transfer chamber 430 is positioned parallel to the first buffer 320 of the first buffer module 300 in the first direction 12. In the transfer chamber 430, an application unit robot 432 and a guide rail 433 are positioned. The transfer chamber 430 has a generally rectangular shape. The applicator robot 432 includes the baking units 420, the resist coating units 400, the first buffer 320 of the first buffer module 300, and the first of the second buffer module 500 to be described later. The substrate W is transferred between the cooling chambers 520. The guide rail 433 is disposed so that its longitudinal direction is parallel to the first direction 12. The guide rail 433 guides the applicator robot 432 to move linearly in the first direction 12. The applicator robot 432 has a hand 434, an arm 435, a support 436, and a pedestal 437. The hand 434 is fixedly installed on the arm 435. The arm 435 is provided in a stretchable structure to allow the hand 434 to move in the horizontal direction. The support 436 is provided such that its longitudinal direction is disposed along the third direction 16. The arm 435 is coupled to the support 436 so as to be able to move linearly in the third direction 16 along the support 436.

The support 436 is fixedly coupled to the support 437, and the support 437 is coupled to the guide rail 433 so as to be movable along the guide rail 433. All of the resist application units 410 have the same structure. However, the types of photoresist used in each resist coating unit 410 may be different from each other. As an example, a chemical amplification resist may be used as the photoresist. The resist coating unit 410 applies a photoresist onto the substrate W. The resist application unit 410 has a housing 411, a support plate 412, and a nozzle 413. The housing 411 has a cup shape with an open top. The support plate 412 is located in the housing 411 and supports the substrate W. The support plate 412 is provided rotatably. The nozzle 413 supplies a photoresist onto the substrate W placed on the support plate 412. The nozzle 413 has a circular tubular shape, and can supply a photosensitive liquid to the center of the substrate W. Optionally, the nozzle 413 may have a length corresponding to the diameter of the substrate W, and a discharge port of the nozzle 413 may be provided as a slit. In addition, the resist coating unit 410 may be further provided with a nozzle 414 supplying a cleaning solution such as deionized water to clean the surface of the substrate W on which the photoresist is applied.

The bake unit 800 heats the substrate W. The bake unit 800 heat-treats the substrate W before and after applying the photoresist. The baking unit 800 heats the substrate W to a predetermined temperature so that the surface properties of the substrate W before applying the photoresist change, and forms a processing liquid film such as an adhesive on the substrate W. have. The bake unit 800 may heat-process the photoresist film on the substrate W coated with the photoresist in a reduced pressure atmosphere. Volatile substances included in the photoresist film may be volatilized. In this embodiment, the bake unit 800 will be described as a unit that heat-processes the photoresist film.

The baking unit 800 includes a cooling plate 830 and a heating unit 1000. The cooling plate 830 cools the substrate W heated by the heating unit 1000. The cooling plate 830 is provided in a circular plate shape. A cooling means such as cooling water or a thermoelectric element is provided inside the cooling plate 830. For example, the substrate W placed on the cooling plate 830 may be cooled to a temperature equal to or adjacent to room temperature.

The heating unit 1000 heats the substrate W in an atmosphere of atmospheric pressure or a lower pressure.

Hereinafter, the heating unit will be described in detail with reference to FIGS. 5A to 8B.

5A to 5C are views showing cross-sections of various types of the heating unit shown in FIG. 1, and FIGS. 6A to 6C are views showing a part of the chamber cover of the heating unit shown in FIGS. 5A to 5C. 7A to 7B are views showing a configuration in which wafer warpage is prevented in the heating unit, and FIGS. 8A to 8B are views showing different types of porous member structures.

5A to 8B, the heating unit 1000 includes a chamber cover 1100, a chamber body 1200, and an elevating part 1300.

The chamber cover 1100 has a cylindrical shape with an open lower portion, and includes an upper plate 1110 at the upper portion and a side plate 1120 formed downward along the circumference of the upper plate. The chamber cover 1100 includes an air flow diffusion space 1113 formed by an inlet hole 1111, an exhaust hole 1112, an exhaust pipe 1116, an airflow blocking member 1114, an airflow blocking member 1114, and a porous member. (1130).

The exhaust hole 1112 is formed in the center of the upper plate 1110 of the chamber cover 1100. The exhaust hole 1112 functions as an exhaust hole through which the atmosphere of the substrate processing space 1115 is exhausted. The inlet hole 1111 is formed in plural, and is formed at a position off the center of the upper plate 1110 of the chamber cover 1110. The inlet hole 1111 functions as an inlet hole through which an external airflow flows into the substrate processing space 1115. A plurality of inlet holes 1111 are formed at positions symmetrical to each other around the exhaust hole 1112. The external airflow may be air or an inert gas.

The exhaust pipe 1116 extends from the exhaust hole 1112 and penetrates the center of the upper plate 1110 of the chamber cover 1100. The exhaust pipe 1116 may have an airflow blocking member 1114 integrally formed on an outer surface of the exhaust pipe 1116. The lower surface of the exhaust pipe 116 is a target to which the porous member 1130 is bonded or fixed together with the lower surface of the airflow blocking member 1114.

The airflow blocking member 1114 blocks airflow. An airflow diffusion space 1113 in which airflow is diffused is formed in a space other than the space blocked by the airflow blocking member 1114. The airflow blocking member 1114 may be formed integrally with the exhaust pipe 1116 or may be formed to protrude downward from an edge portion of the upper plate. The porous member 1130 is fixed to the lower end of the airflow blocking member 1114 and the lower end of the exhaust pipe 1116 by bonding or bonding.

The airflow diffusion space 1113 diffuses the airflow introduced from the inflow hole 1111. The airflow diffusion space 1113 is formed at a location other than the location where the airflow blocking member 1114 is formed. The airflow diffusion space 1113 may be formed in various positions. For example, the airflow diffusion space 1113 may be formed at the edge, center, or front portion of the upper plate 1110 except for the portion in which the airflow blocking member 1114 is formed, depending on the purpose.

Specifically, referring to FIG. 5A, the heating unit 1000 illustrated in FIG. 5A is a front portion of the chamber cover 1100 excluding the portion where the exhaust pipe 1116 is formed, that is, the air flow diffusion space ( 1113) is formed. 6A is a view showing the chamber cover 1100 of the heating unit 1000 shown in FIG. 5A, and the left side shows the upper surface and the right side shows the rear side. Looking at the rear surface of the chamber cover 1100 on the right, the airflow blocking member 1114 hardly exists. Accordingly, the airflow diffusion space 1113 formed on the front surface of the upper plate 1110 excluding the portion where the exhaust pipe 1116 is formed diffuses the airflow introduced from the inlet hole 1111 to the front surface of the upper plate 1110. After that, the airflow diffused to the entire surface is uniformly sprayed to the entire surface of the substrate W through the porous member 1130.

5B, the heating unit 1000 shown in FIG. 5B includes an airflow diffusion space at the edge of the chamber cover 1100, ie, at the edge of the upper plate 1110, excluding the portion where the exhaust pipe 1116 is formed and the center portion. 1113) is formed. 6B is a view showing the chamber cover 1100 of the heating unit 1000 shown in FIG. 5B, in which the left side shows the top and the right side shows the rear side. Looking at the rear surface of the chamber cover 1100 on the right side, an airflow blocking member 1114 is formed widely in the center portion of the upper plate 1110. Accordingly, the airflow diffusion space 1113 formed at the edge portion of the upper plate 1110 diffuses the airflow introduced from the inlet hole 1111 to the edge portion of the upper plate 1110. Thereafter, the airflow diffused to the edge portion is uniformly sprayed to the edge portion of the substrate W through the porous member 1130. Referring to FIG. 7A, it can be seen that the heating unit having the structure of FIG. 5B intensively sprays a uniform airflow on the edge portion of the substrate W, so that it is effective in preventing the edge portion of the substrate W from being lifted. have.

5C, the heating unit 1000 shown in FIG. 5C is a center portion of the chamber cover 1100, that is, the center portion of the upper plate 1110 except for the portion where the exhaust pipe 1116 is formed in the chamber cover 1100. An airflow diffusion space 1113 is formed. 6C is a view showing the chamber cover 1100 of the heating unit 1000 shown in FIG. 5C, and the left side shows the upper surface and the right side shows the rear side. Looking at the rear surface of the chamber cover 1100 on the right side, an airflow blocking member 1114 is formed widely at an edge portion of the upper plate 1110. Accordingly, the airflow diffusion space 1113 formed in the center portion of the upper plate 1110 diffuses the airflow introduced from the inlet hole 1111 to the center portion of the upper plate 1110. Thereafter, the airflow diffused to the center portion is uniformly sprayed to the center portion of the substrate W through the porous member 1130. Referring to FIG. 7B, it can be seen that the heating unit having the structure of FIG. 5C intensively sprays a uniform airflow to the center portion of the substrate W, so that it is effective in preventing the center portion of the substrate W from being lifted. have.

That is, in order to prevent the edge portion of the substrate W from being lifted during the processing process, the air flow diffusion space 1113 is formed at the edge portion of the upper plate 1110, and thus the air flow sprayed to the edge portion of the substrate W Warpage of the substrate W can be prevented. In addition, in order to prevent the center portion of the substrate W from being lifted during the processing process, the air flow diffusion space 1113 is formed in the center portion of the upper plate 1110, and thus the substrate is formed by the air flow sprayed to the center portion of the substrate W. (W) can be prevented from bending. In addition, by forming the airflow diffusion space 1113 on the front surface of the upper plate 1110, it is possible to prevent bending of the substrate W by airflow sprayed on the front surface of the substrate W.

As a result, it is possible to control the area of the airflow sprayed onto the substrate W according to the position of the airflow diffusion space 1113 formed in the chamber cover 1100. Warping of the substrate W can be prevented by adjusting the area in which the airflow is sprayed onto the substrate W using different replaceable chamber covers according to the shape of the substrate W being bent during substrate processing.

The porous member 1130 is made of a material including a plurality of voids. For example, the porous member 1130 may be formed of a carbon compound (graphite) material including a plurality of pores, or a ceramic material including a plurality of pores. The porous member 1130 may uniformly spray the airflow from the airflow diffusion space 1113 to the substrate using a plurality of voids. The airflow flowing in from the inlet hole 1111 diffuses in the airflow diffusion space 1113 formed at any one of the front, edge, and center portions, and then the pressure is increased by the additionally introduced airflow. It is uniformly sprayed onto the substrate W through the plurality of voids of the 1130.

A communication hole 1131 capable of communicating with the exhaust pipe 1116 is formed in the center of the porous member 1130. The communication hole 1131 allows the airflow of the substrate processing space 1115 to be exhausted to the exhaust pipe 1116. The portion in which the communication hole 1131 is formed may be bonded or combined with the lower surface of the exhaust pipe 1116 so as to communicate with the exhaust pipe 1116.

The porous member 1130 is bonded to the exhaust pipe 1116 and the airflow blocking member 1114 by a ceramic adhesive or a bond capable of withstanding high temperatures. Unlike this, the porous member 1130 may be fixed to the exhaust pipe 1116 and the airflow blocking member 1114 by bolts.

Referring to FIG. 8A, the porous member 1130 formed of one sub-porous member may be selected to have a pore size capable of forming an airflow suitable for processing.

Referring to FIG. 8B, the porous member 1130 may be formed by stacking two or more sub-porous members having different pore sizes. A sub-porous member 1134 having a smaller pore size may be disposed toward the bottom, and a sub-porous member 1133 having a larger pore size may be disposed toward the upper side. In the case of the porous member 1130 in which a sub-porous member having a small pore size is stacked toward the bottom, the air flow is preferentially made to a uniform state in the sub-porous member 1133 having a large pore size disposed above, and In the sub-porous member 1134 having a small pore size, the airflow may be made more uniform and sprayed onto the substrate W. Each of the sub-porous members 1133 and 1134 may be selected with a pore size capable of forming an airflow suitable for processing.

7A and 7B, when the airflow diffusion space 1113 is formed at the edge or front portion of the upper plate 1110, when the diameter size of the porous member 1130 is larger than the diameter size of the substrate W , Airflow may be sprayed to a wider area than the area on which the substrate W is placed. The airflow sprayed on the outer portion of the substrate W functions as an air curtain A that blocks the inflow and outflow of materials.

The side plate 1120 of the chamber cover 1100 is combined with the chamber body 1200 during processing to form a sealed substrate processing space 1115. The substrate processing space 1115 is formed in a reduced pressure atmosphere at normal pressure or lower during processing.

The chamber body 1200 is provided in a cylindrical shape with an open top. A heating member 1210 is provided inside the chamber body 1200.

The heating member 1210 heats the substrate W mounted on the mounting plate formed on the upper surface of the heating member 1210. The heating member 1210 includes a plurality of heaters, and the plurality of heaters form respective heating regions. Each heating area can be controlled independently. For example, there may be 15 heating areas. The temperature of the heating area is measured by a sensor. The heaters may be thermoelectric elements or heating wires.

A plurality of lift pins (not shown) that are driven in the vertical direction are provided inside the heating member 1210 or the chamber body 1200. When the substrate W enters the chamber, the lift pin protrudes upward from the mounting plate formed on the upper surface of the heating member 1210 to support the substrate W. During processing, the lift pin is drawn in the lower direction to the substrate W. Is mounted on the mounting plate formed on the upper surface of the heating member 1210.

The elevating part 1300 drives the chamber cover 1100 in the vertical direction. The process processing chamber cover 1100 is driven downward by the elevating part 1300 and is coupled to the chamber body 1200 to form a sealed substrate processing space 1115. Immediately after the process treatment or immediately before the process treatment, when the substrate W enters the chamber 100 or is transferred to another unit, the chamber cover 1100 is driven upward by the elevating part 1300 and the chamber body 1200 And spaced apart.

According to an embodiment of the present invention, the airflow of the substrate may be uniformly sprayed onto the substrate by using at least one porous member.

According to an exemplary embodiment of the present invention, it is possible to control the area of the airflow sprayed onto the substrate according to the position of the airflow diffusion space formed in the chamber cover. Warping of the substrate W can be prevented by using a replaceable chamber cover provided with airflow diffusion spaces formed at different positions according to the shape of the substrate being bent during substrate processing.

According to an embodiment of the present invention, since vacuum adsorption is not required for the heating member, the configuration of the heating member is simplified, and the manufacturing cost of the heating member can be reduced.

According to an embodiment of the present invention, it is possible to control the airflow and to prevent the substrate from being warped.

Although the present invention has been described in detail through specific examples, this is for explaining the present invention in detail, and the present invention is not limited thereto, and those of ordinary skill in the art within the spirit of the present invention It is clear that the transformation or improvement is possible.

1000: heating unit 1100: chamber cover
1110: top plate 1111: inlet hole
1112: exhaust hole 1113: airflow diffusion space
1114: air flow blocking member 1115: substrate processing space
1116: exhaust pipe 1120: side plate
1130: porous member 1131: communication hole
1200: chamber body 1210: heating member
1300: elevator

Claims (5)

A chamber body having a heating member for heating the substrate;
The lower part is opened and includes a chamber cover that is combined with the chamber body during processing to form a substrate processing space,
The chamber cover,
A side plate forming the substrate processing space;
A top plate including an inlet hole through which air flow is introduced, and an air flow diffusion space for diffusing the introduced air flow; And
A porous member provided under the upper plate and uniformly spraying the diffused airflow onto the substrate,
The airflow diffusion space is one of the center portion and the edge portion of the upper plate so that air flow is sprayed to any one of the center portion and the edge portion of the substrate in order to prevent any one of the center portion and the edge portion of the substrate from being lifted. A substrate processing apparatus, characterized in that provided in one. delete The method of claim 1,
The substrate processing apparatus, wherein the diameter size of the porous member is larger than the diameter size of the substrate, and the airflow is sprayed in a region wider than the region where the substrate is placed. The method of claim 1,
The porous member is a substrate processing apparatus, characterized in that at least two or more sub-porous members having different pore sizes are stacked. The method of claim 4,
The substrate processing apparatus, wherein the sub-porous member disposed under the at least two sub-porous members having different pore sizes has a smaller pore size.

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