KR102213049B1 - 이온 주입 시스템에서 추출 전극 어셈블리 전압 변조 - Google Patents

이온 주입 시스템에서 추출 전극 어셈블리 전압 변조 Download PDF

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Publication number
KR102213049B1
KR102213049B1 KR1020157034421A KR20157034421A KR102213049B1 KR 102213049 B1 KR102213049 B1 KR 102213049B1 KR 1020157034421 A KR1020157034421 A KR 1020157034421A KR 20157034421 A KR20157034421 A KR 20157034421A KR 102213049 B1 KR102213049 B1 KR 102213049B1
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KR
South Korea
Prior art keywords
ion
ion source
suppression
extraction electrode
ions
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Expired - Fee Related
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KR1020157034421A
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English (en)
Korean (ko)
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KR20160005095A (ko
Inventor
네일 콜빈
진청 창
Original Assignee
액셀리스 테크놀러지스, 인크.
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Publication of KR20160005095A publication Critical patent/KR20160005095A/ko
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/08—Ion sources; Ion guns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/02—Details
    • H01J2237/022—Avoiding or removing foreign or contaminating particles, debris or deposits on sample or tube
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/304—Controlling tubes

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  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Electron Sources, Ion Sources (AREA)
KR1020157034421A 2013-05-03 2014-05-02 이온 주입 시스템에서 추출 전극 어셈블리 전압 변조 Expired - Fee Related KR102213049B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13/886,963 2013-05-03
US13/886,963 US9006690B2 (en) 2013-05-03 2013-05-03 Extraction electrode assembly voltage modulation in an ion implantation system
PCT/US2014/036578 WO2014179687A1 (en) 2013-05-03 2014-05-02 Extraction electrode assembly voltage modulation in an ion implantation system

Publications (2)

Publication Number Publication Date
KR20160005095A KR20160005095A (ko) 2016-01-13
KR102213049B1 true KR102213049B1 (ko) 2021-02-05

Family

ID=50897927

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020157034421A Expired - Fee Related KR102213049B1 (ko) 2013-05-03 2014-05-02 이온 주입 시스템에서 추출 전극 어셈블리 전압 변조

Country Status (6)

Country Link
US (1) US9006690B2 (https=)
JP (2) JP2016524277A (https=)
KR (1) KR102213049B1 (https=)
CN (1) CN105474349B (https=)
TW (1) TWI638379B (https=)
WO (1) WO2014179687A1 (https=)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9748072B2 (en) * 2014-06-23 2017-08-29 Advanced Ion Beam Technology, Inc. Lower dose rate ion implantation using a wider ion beam
US9214318B1 (en) * 2014-07-25 2015-12-15 International Business Machines Corporation Electromagnetic electron reflector
US9318302B1 (en) * 2015-03-31 2016-04-19 Axcelis Technologies, Inc. Integrated extraction electrode manipulator for ion source
WO2017079588A1 (en) 2015-11-05 2017-05-11 Axcelis Technologies, Inc. Ion source liner having a lip for ion implantion systems
US10074508B2 (en) 2015-11-10 2018-09-11 Axcelis Technologies, Inc. Low conductance self-shielding insulator for ion implantation systems
KR102732203B1 (ko) 2016-01-19 2024-11-19 액셀리스 테크놀러지스, 인크. 개선된 이온 소스 캐소드 쉴드
JP6860576B2 (ja) * 2016-01-19 2021-04-14 アクセリス テクノロジーズ， インコーポレイテッド マルチピース電極開口
US10361069B2 (en) 2016-04-04 2019-07-23 Axcelis Technologies, Inc. Ion source repeller shield comprising a labyrinth seal
US10074514B1 (en) * 2017-09-08 2018-09-11 Varian Semiconductor Equipment Associates, Inc. Apparatus and method for improved ion beam current
JP7104898B2 (ja) 2019-03-01 2022-07-22 日新イオン機器株式会社 イオン源およびそのクリーニング方法
DE102019107367A1 (de) * 2019-03-22 2020-09-24 Vaillant Gmbh Verfahren zum Prüfen des Vorhandenseins einer Rückschlagklappe in einer Heizungsanlage
US12020896B2 (en) * 2020-07-31 2024-06-25 Taiwan Semiconductor Manufacturing Company, Ltd. Insulator for an ion implantation source
US11651932B1 (en) * 2021-10-26 2023-05-16 Applied Materials, Inc. Mismatched optics for angular control of extracted ion beam
JP7684922B2 (ja) * 2022-03-09 2025-05-28 株式会社東芝 半導体装置

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3427450B2 (ja) * 1993-10-19 2003-07-14 日新電機株式会社 イオン源装置
US5497006A (en) * 1994-11-15 1996-03-05 Eaton Corporation Ion generating source for use in an ion implanter
US5554854A (en) * 1995-07-17 1996-09-10 Eaton Corporation In situ removal of contaminants from the interior surfaces of an ion beam implanter
US5661308A (en) * 1996-05-30 1997-08-26 Eaton Corporation Method and apparatus for ion formation in an ion implanter
US6452338B1 (en) * 1999-12-13 2002-09-17 Semequip, Inc. Electron beam ion source with integral low-temperature vaporizer
US6501078B1 (en) * 2000-03-16 2002-12-31 Applied Materials, Inc. Ion extraction assembly
US6559462B1 (en) * 2000-10-31 2003-05-06 International Business Machines Corporation Method to reduce downtime while implanting GeF4
JP4374487B2 (ja) * 2003-06-06 2009-12-02 株式会社Ｓｅｎ イオン源装置およびそのクリーニング最適化方法
JP4502191B2 (ja) * 2004-06-18 2010-07-14 ルネサスエレクトロニクス株式会社 イオンビーム引出電極およびイオン注入装置
US7819981B2 (en) * 2004-10-26 2010-10-26 Advanced Technology Materials, Inc. Methods for cleaning ion implanter components
US7566887B2 (en) * 2007-01-03 2009-07-28 Axcelis Technologies Inc. Method of reducing particle contamination for ion implanters
US7655931B2 (en) * 2007-03-29 2010-02-02 Varian Semiconductor Equipment Associates, Inc. Techniques for improving the performance and extending the lifetime of an ion source with gas mixing
US7915597B2 (en) * 2008-03-18 2011-03-29 Axcelis Technologies, Inc. Extraction electrode system for high current ion implanter
US20110108058A1 (en) * 2009-11-11 2011-05-12 Axcelis Technologies, Inc. Method and apparatus for cleaning residue from an ion source component
US8604418B2 (en) * 2010-04-06 2013-12-10 Axcelis Technologies, Inc. In-vacuum beam defining aperture cleaning for particle reduction
JP5141732B2 (ja) * 2010-08-11 2013-02-13 日新イオン機器株式会社 イオン源電極のクリーニング方法
JP5672297B2 (ja) * 2012-06-22 2015-02-18 日新イオン機器株式会社 イオンビーム照射装置およびイオンビーム照射装置の運転方法
US9530615B2 (en) * 2012-08-07 2016-12-27 Varian Semiconductor Equipment Associates, Inc. Techniques for improving the performance and extending the lifetime of an ion source
US20140127394A1 (en) * 2012-11-07 2014-05-08 Varian Semiconductor Equipment Associates, Inc. Reducing Glitching In An Ion Implanter

Also Published As

Publication number Publication date
JP2016524277A (ja) 2016-08-12
US20140326901A1 (en) 2014-11-06
TW201506982A (zh) 2015-02-16
KR20160005095A (ko) 2016-01-13
JP2020024931A (ja) 2020-02-13
CN105474349B (zh) 2018-02-02
WO2014179687A1 (en) 2014-11-06
JP6931686B2 (ja) 2021-09-08
TWI638379B (zh) 2018-10-11
US9006690B2 (en) 2015-04-14
CN105474349A (zh) 2016-04-06

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