KR102186214B1 - 가공 장치에서의 웨이퍼의 중심 검출 방법 - Google Patents

가공 장치에서의 웨이퍼의 중심 검출 방법 Download PDF

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Publication number
KR102186214B1
KR102186214B1 KR1020150017885A KR20150017885A KR102186214B1 KR 102186214 B1 KR102186214 B1 KR 102186214B1 KR 1020150017885 A KR1020150017885 A KR 1020150017885A KR 20150017885 A KR20150017885 A KR 20150017885A KR 102186214 B1 KR102186214 B1 KR 102186214B1
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KR
South Korea
Prior art keywords
wafer
center
imaging
feature pattern
chuck table
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KR1020150017885A
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English (en)
Korean (ko)
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KR20150101381A (ko
Inventor
사토시 미야타
Original Assignee
가부시기가이샤 디스코
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Application filed by 가부시기가이샤 디스코 filed Critical 가부시기가이샤 디스코
Publication of KR20150101381A publication Critical patent/KR20150101381A/ko
Application granted granted Critical
Publication of KR102186214B1 publication Critical patent/KR102186214B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/98—Methods for disconnecting semiconductor or solid-state bodies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
    • H01L21/681—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment using optical controlling means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Laser Beam Processing (AREA)
  • Dicing (AREA)
KR1020150017885A 2014-02-26 2015-02-05 가공 장치에서의 웨이퍼의 중심 검출 방법 KR102186214B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2014-035562 2014-02-26
JP2014035562A JP6215730B2 (ja) 2014-02-26 2014-02-26 加工装置におけるウエーハの中心検出方法

Publications (2)

Publication Number Publication Date
KR20150101381A KR20150101381A (ko) 2015-09-03
KR102186214B1 true KR102186214B1 (ko) 2020-12-03

Family

ID=53913596

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020150017885A KR102186214B1 (ko) 2014-02-26 2015-02-05 가공 장치에서의 웨이퍼의 중심 검출 방법

Country Status (4)

Country Link
JP (1) JP6215730B2 (zh)
KR (1) KR102186214B1 (zh)
CN (1) CN104867842B (zh)
TW (1) TWI642095B (zh)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6607639B2 (ja) * 2015-12-24 2019-11-20 株式会社ディスコ ウェーハの加工方法
CN105810624A (zh) * 2016-05-05 2016-07-27 先进光电器材（深圳）有限公司 晶片自动校正装置
JP7032050B2 (ja) * 2017-03-14 2022-03-08 株式会社ディスコ レーザー加工装置
JP7022624B2 (ja) * 2018-03-13 2022-02-18 株式会社ディスコ 位置付け方法
SG11202010479PA (en) * 2018-04-24 2020-11-27 Disco Hi Tec Europe Gmbh Alignment device and alignment method
JP7088771B2 (ja) * 2018-07-26 2022-06-21 株式会社ディスコ アライメント方法
CN114311346B (zh) * 2022-03-16 2022-06-07 江苏京创先进电子科技有限公司 晶圆与工作台对准识别方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004186306A (ja) 2002-12-02 2004-07-02 Matsushita Electric Ind Co Ltd ウェハの中心検出方法、並びに半導体チップのピックアップ方法及び装置
JP2011249572A (ja) 2010-05-27 2011-12-08 Disco Abrasive Syst Ltd ウェーハの中心位置検出方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63168708A (ja) * 1987-01-06 1988-07-12 Nec Corp 回転位置決め装置
JPH0327043A (ja) 1989-06-23 1991-02-05 Fuji Photo Film Co Ltd 湿し水不要感光性平版印刷版
JP2006093333A (ja) 2004-09-22 2006-04-06 Disco Abrasive Syst Ltd 切削方法
JP5065637B2 (ja) * 2006-08-23 2012-11-07 株式会社ディスコ ウエーハの加工方法
JP5122880B2 (ja) * 2007-07-11 2013-01-16 株式会社ディスコ レーザー加工装置のアライメント方法
JP2011021916A (ja) * 2009-07-13 2011-02-03 Nikon Corp 位置検出装置、位置検出方法および基板重ね合わせ装置
JP2011082354A (ja) * 2009-10-07 2011-04-21 Disco Abrasive Syst Ltd 加工装置
JP2013008796A (ja) * 2011-06-23 2013-01-10 Disco Abrasive Syst Ltd ウェーハの加工方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004186306A (ja) 2002-12-02 2004-07-02 Matsushita Electric Ind Co Ltd ウェハの中心検出方法、並びに半導体チップのピックアップ方法及び装置
JP2011249572A (ja) 2010-05-27 2011-12-08 Disco Abrasive Syst Ltd ウェーハの中心位置検出方法

Also Published As

Publication number Publication date
CN104867842B (zh) 2019-03-08
TW201533785A (zh) 2015-09-01
TWI642095B (zh) 2018-11-21
JP6215730B2 (ja) 2017-10-18
KR20150101381A (ko) 2015-09-03
CN104867842A (zh) 2015-08-26
JP2015162507A (ja) 2015-09-07

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