KR102184955B1 - Epoxy resin composition for sealing semiconductor and semiconductor device - Google Patents

Abstract

[식 중, X는 단결합, 또는 CH₂, C(CH₃)₂, SO₂, S, O 및 O(CO)O로부터 선택되는 기이며, d, e, n은 0≤d≤0.25n, 0≤e<2n, 2d+e=2n, 3≤n≤1,000을 만족하는 수임]
을 필수 성분으로 하고, 브롬화물, 적인, 인산에스테르 및 안티몬 화합물을 실질적으로 포함하지 않는 것을 특징으로 하는 반도체 밀봉용 에폭시 수지 조성물.Even when stored at a high temperature of 175 to 250℃ for a long time, it has excellent adhesion to CuLF or Ag plating, and it can be a semiconductor device with excellent reliability without breaking the junction of Cu wire and Cu wire/Al pad, and without corrosion. It provides an epoxy resin composition and a semiconductor device for use.
(A) epoxy resin,
(B) curing agent,
(C) an inorganic filler,
(D) bismuth hydroxide or bismuth hypocarbonate,
(E) a phosphazene compound represented by the following average composition formula (1)

[In the formula, X is a single bond, or a group selected from CH ₂ , C(CH ₃ ) ₂ , SO ₂ , S, O and O(CO)O, and d, e, n are 0≤d≤0.25n , 0≤e<2n, 2d+e=2n, 3≤n≤1,000 are satisfied]
An epoxy resin composition for semiconductor sealing, comprising as an essential component and substantially free of bromide, red, phosphoric acid ester, and antimony compound.

Description

Epoxy resin composition for semiconductor sealing, and a semiconductor device TECHNICAL FIELD [EPOXY RESIN COMPOSITION FOR SEALING SEMICONDUCTOR AND SEMICONDUCTOR DEVICE}

The present invention has excellent reliability when left to stand at high temperature for a long period of time, less peeling from the Cu lead frame (LF) or the Ag plated portion, and does not cause corrosion or migration of the Cu wire. It relates to a semiconductor device sealed with cargo.

In recent years, environmental measures such as global warming measures and energy conversion from fossil fuels are being carried out at the global level, and the number of production of hybrid cars and electric vehicles is increasing. In addition, domestic electric appliances in emerging countries such as China and India are also increasingly being equipped with inverter motors as measures to save energy.

In the hybrid vehicle, electric vehicle, and inverter, a power semiconductor that converts AC to DC, converts DC to AC, or converts voltage becomes important. However, silicon (Si), which has been used as a semiconductor for many years, is approaching its performance limit, and it has become difficult to expect a dramatic performance improvement. Therefore, attention is being drawn to next-generation power semiconductors using materials such as silicon carbide (SiC), gallium nitride (GaN), and diamond. For example, in order to reduce the loss during power conversion, it is required to reduce the resistance of the power MOSFET, but it is difficult to significantly reduce the resistance in the current mainstream Si-MOSFET. Therefore, development of low-loss power MOSFETs using SiC, a semiconductor with a wide band gap (wide gap), is in progress. SiC and GaN have excellent properties such that a band gap is about 3 times that of Si and a breakdown electric field strength is 10 times or more. There are also features such as high temperature operation (there is a report of operation at 650°C in SiC), high thermal conductivity (SiC is Cu class), and a large saturation electron drift rate. As a result, when SiC or GaN is used, it is possible to reduce the on-resistance of the power semiconductor and significantly reduce the power loss of the power conversion circuit. However, since it is expected that the temperature above the element heats up to 175°C or higher, heat resistance properties are required for surrounding materials including sealing agents.

On the other hand, power semiconductors are generally protected by transfer molding with an epoxy resin and potting sealing with a silicone gel. In recent years, from the viewpoint of miniaturization and weight reduction (especially for automobile applications), transfer molding using an epoxy resin has become mainstream. Epoxy resin is a thermosetting resin that is excellent in moldability, adhesion to a substrate, and mechanical strength, and is well-balanced, but reliability properties in a temperature range exceeding 175°C are being questioned. In fact, when a semiconductor device sealed with a conventional sealing material was left at a high temperature of 200°C for 500 hours, cracks occurred in the sealing material, peeling occurred at the interface between the sealing material and the Ag plating die pad, and the Cu wire/Al pad There are cases in which the reliability is affected, such as cracks in the alloy layer.

Moreover, the following documents can be mentioned as a conventional technique related to the present invention.

IEEE Transactions on Components and packing Technology, Vol.26, No.2, 367-374 SEMICON Singapore 2005, 35-43 Journal of Materials Science(2008)43, 6038-6048

The present invention has been made in view of these circumstances, and has excellent adhesion of CuLF or Ag plating even when stored at a high temperature of 175 to 250°C for a long time, and reliability without disconnection of the junction of Cu wire and Cu wire/Al pad, without corrosion. An object of the present invention is to provide an epoxy resin composition for sealing a semiconductor and a semiconductor device that can be used as this excellent semiconductor device.

The inventors of the present invention have conducted intensive studies in order to achieve the above object, as a result of (A) an epoxy resin, (B) a curing agent, (C) an inorganic filler, (D) bismuth hydroxide or bismuth hypocarbonate, and (E) the following average composition formula ( The epoxy resin composition for sealing semiconductors containing a phosphazene compound represented by 1) as an essential component and substantially free of bromide, red, phosphoric acid ester and antimony compounds has excellent reliability when stored at high temperatures for a long period of time, In addition, it is possible to obtain a cured product having excellent flame retardancy and moisture resistance reliability, and it has been discovered that a semiconductor device sealed with a cured product of the composition has excellent flame retardancy and high-temperature storage reliability, and thus the present invention is achieved.

Accordingly, the present invention provides an epoxy resin composition for sealing a semiconductor and a semiconductor device shown below.

(1) (A) epoxy resin,

(B) curing agent,

(C) an inorganic filler,

(D) bismuth hydroxide or bismuth hypocarbonate,

(E) a phosphazene compound represented by the following average composition formula (1)

[In the formula, X is a single bond, or a group selected from CH ₂ , C(CH ₃ ) ₂ , SO ₂ , S, O and O(CO)O, and d, e, n are 0≤d≤0.25n , 0≤e<2n, 2d+e=2n, 3≤n≤1,000 are satisfied]

An epoxy resin composition for semiconductor sealing, comprising as an essential component and substantially free of bromide, red, phosphoric acid ester, and antimony compound.

[2] The epoxy resin composition according to [1], wherein the addition amount of (D) bismuth hydroxide or bismuth hypocarbonate is 3 to 10 parts by mass per 100 parts by mass of the total of the components (A) and (B).

[3] (A) The epoxy resin composition according to [1] or [2], wherein the epoxy equivalent of the epoxy resin is less than 210.

[4] (A) The epoxy resin composition according to any one of [1] to [3], wherein the epoxy resin is an epoxy resin represented by the following general formula (2).

(In the formula, a is an integer of 1 to 10)

[5] A semiconductor device sealed with a cured product of the epoxy resin composition according to any one of [1] to [4].

The epoxy resin composition for sealing semiconductors of the present invention can obtain a cured product having excellent moldability and excellent flame retardancy and high-temperature stability. In addition, since the epoxy resin composition does not contain bromide such as brominated epoxy resin and antimony compounds such as antimony trioxide, there is no adverse effect on the human body or the environment. In addition, the epoxy resin composition for sealing a semiconductor of the present invention is excellent in hot water extraction characteristics and a cured product having particularly excellent moisture resistance reliability as compared to an epoxy resin composition to which a phosphorus-based flame retardant such as red and phosphoric acid ester is added. Further, the semiconductor device sealed with the cured product of the epoxy resin composition for semiconductor sealing of the present invention is excellent in flame retardancy and high-temperature storage reliability, and is particularly useful in industry.

Hereinafter, the present invention will be described in more detail.

The epoxy resin composition for sealing a semiconductor of the present invention

(A) epoxy resin,

(B) curing agent,

(C) an inorganic filler,

(D) bismuth hydroxide or bismuth hypocarbonate,

(E) a phosphazene compound represented by the following average composition formula (1)

[In the formula, X is a single bond, or a group selected from CH ₂ , C(CH ₃ ) ₂ , SO ₂ , S, O and O(CO)O, and d, e, n are 0≤d≤0.25n , 0≤e<2n, 2d+e=2n, 3≤n≤1,000 are satisfied]

As an essential component, bromide, red, phosphoric acid ester, and antimony compounds are not substantially included.

Here, "substantially not included" means that it is not intentionally added to the composition, and industrially, it allows the possibility of being incorporated as a contaminant.

The epoxy resin (A) constituting the epoxy resin composition of the present invention is not particularly limited. Typical epoxy resins include novolak type epoxy resin, cresol novolak type epoxy resin, triphenol alkane type epoxy resin, aralkyl type epoxy resin, biphenyl skeleton-containing aralkyl type epoxy resin, biphenyl type epoxy resin, dicyclopentadiene. Type epoxy resin, heterocyclic type epoxy resin, naphthalene ring-containing epoxy resin, bisphenol A type epoxy compound, bisphenol F type epoxy compound, stilbene type epoxy resin, etc., of which one type alone or two or more types are used in combination can do. In the present invention, no brominated epoxy resin is blended.

Among these, for semiconductor devices requiring insulation and mechanical strength at high temperatures, a cured product having a high glass transition temperature is generally preferred, and as such a cured product, a crosslinking density is high and an epoxy group concentration is high, that is, an epoxy equivalent. This low epoxy resin is suitably used. As an epoxy equivalent, it is preferably less than 210, more preferably less than 170. The triphenolalkane type represented by the following general formula (2) is an epoxy equivalent of 168.

(In the formula, a is an integer of 1 to 10)

The epoxy resin preferably has a hydrolyzable chlorine content of 1,000 ppm or less, particularly 500 ppm or less, and sodium and potassium content of 10 ppm or less, respectively. When the hydrolyzable chlorine exceeds 1,000 ppm or sodium or potassium exceeds 10 ppm, moisture resistance may deteriorate when the semiconductor device is left under high temperature and high humidity for a long time.

The curing agent (B) used in the present invention is not particularly limited. As a general curing agent, a phenol resin is preferable, and specifically, a phenol novolak resin, a naphthalene ring-containing phenol resin, an aralkyl type phenol resin, a triphenol alkane type phenol resin, a biphenyl skeleton-containing aralkyl type phenol resin, a biphenyl type Phenol resins, alicyclic phenol resins, heterocyclic phenol resins, naphthalene ring-containing phenol resins, bisphenol A resins, bisphenol F resins, and the like, and one of them alone or two The above can be used together.

Like the epoxy resin, the curing agent preferably has a sodium and potassium content of 10 ppm or less, respectively. When sodium or potassium exceeds 10 ppm, moisture resistance may deteriorate when the semiconductor device is left under high temperature and high humidity for a long time.

Here, the blending amount of the epoxy resin and the curing agent is not particularly limited, but the molar ratio of the phenolic hydroxyl group contained in the curing agent to 1 mole of the epoxy group contained in the epoxy resin is preferably in the range of 0.5 to 1.5, particularly 0.7 to 1.2.

In addition, in the present invention, in order to accelerate the curing reaction between the epoxy resin and the curing agent, it is preferable to use a curing accelerator. The curing accelerator is not particularly limited as long as it accelerates the curing reaction, and for example, triphenylphosphine, tributylphosphine, tri(p-methylphenyl)phosphine, tri(nonylphenyl)phosphine, triphenylphosphine Phosphorous compounds such as triphenylborane, tetraphenylphosphine tetraphenylborate, adducts of triphenylphosphine and benzoquinone, triethylamine, benzyldimethylamine, α-methylbenzyldimethylamine, 1,8-diazabi Tertiary amine compounds such as cyclo(5.4.0)undecene-7, imidazole compounds such as 2-methylimidazole, 2-phenylimidazole, and 2-phenyl-4-methylimidazole, etc. can be used. I can.

Although the blending amount of the curing accelerator is an effective amount, the curing accelerator for accelerating the curing reaction between the epoxy resin such as the phosphorus compound, tertiary amine compound, and imidazole compound and the curing agent (phenol resin) is It is preferable to set it as 0.1-5 mass parts, especially 0.5-2 mass parts with respect to the total amount of 100 mass parts.

As the (C) inorganic filler to be blended in the epoxy resin composition of the present invention, those blended in the epoxy resin composition can be used. For example, silicas such as fused silica and crystalline silica, alumina, silicon nitride, aluminum nitride, boronnitride, titanium oxide, glass fiber, and the like may be mentioned.

The average particle diameter and shape of these inorganic fillers, and the amount of the inorganic filler to be filled are not particularly limited, but in order to increase flame retardancy, it is preferable to fill the epoxy resin composition in an amount as large as possible within a range that does not impair moldability. In this case, a spherical fused silica having an average particle diameter of 5 to 30 μm is particularly preferable as the average particle diameter and shape of the inorganic filler, and the amount of the inorganic filler of the component (C) is the total amount of the components (A) and (B) 100 It is preferable to set it as 400 to 1,200 mass parts, especially 500 to 1,000 mass parts with respect to mass parts.

In addition, it is preferable to use a surface-treated inorganic filler with a coupling agent such as a silane coupling agent or a titanate coupling agent in order to increase the bonding strength between the resin and the inorganic filler. Examples of such coupling agents include epoxy silanes such as γ-glycidoxypropyltrimethoxysilane, γ-glycidoxypropylmethyldiethoxysilane, β-(3,4-epoxycyclohexyl)ethyltrimethoxysilane, and N-β (Aminoethyl)-γ-aminopropyltrimethoxysilane, γ-aminopropyltriethoxysilane, aminosilane such as N-phenyl-γ-aminopropyltrimethoxysilane, γ-mercaptopropyltrimethoxysilane, etc. It is preferable to use one type or two or more types of silane coupling agents, such as mercaptosilane. Here, the compounding amount of the coupling agent used for the surface treatment and the surface treatment method are not particularly limited.

The epoxy resin composition for semiconductor sealing of the present invention uses (D) bismuth hydroxide or bismuth hypocarbonate.

As the effects of the bismuth compound so far, the effect as an inorganic ion exchanger for exchanging anions derived from phosphate esters (Japanese Patent Laid-Open Publication No. 2003-147169), and the effect of improving laser marking properties (Japanese Patent Publication (Hei) 6-84601), a combination with a brominated epoxy resin, and a halogenated gas trap effect under a high temperature atmosphere (Japanese Patent Laid-Open No. 11-240937), and the like are known.

In the present invention, among the bismuth compounds, only bismuth hydroxide and bismuth hypocarbonate supplement organic acids other than halogen and do not emit corrosive anions, so that adhesion with CuLF or Ag plating is maintained even under long-term high temperature storage, and Cu It was found that it did not cause disconnection, corrosion, etc. at the junction of the wire and Cu wire/Al pad. Among the epoxy resins, resins having a low epoxy equivalent, for example, triphenolalkane-type epoxy resins represented by the general formula (2), have a high concentration of organic acids generated by thermal decomposition, so that the combination of bismuth hydroxide and bismuth hypocarbonate is effective. .

(D) The addition amount of bismuth hydroxide or bismuth hypocarbonate is preferably 3 to 10 parts by mass, and more preferably 3 to 8 parts by mass with respect to 100 parts by mass of the total amount of the components (A) and (B). If it is less than 3 parts by mass, the properties may not be sufficiently exhibited. If it exceeds 10 parts by mass, there is a possibility of causing a decrease in fluidity or poor curing.

Further, as an impurity in bismuth hydroxide and bismuth hypocarbonate, the nitrate ion is preferably 10% by mass or less.

The epoxy resin composition for semiconductor sealing of the present invention uses a phosphazene compound represented by (E) the following average composition formula (1).

[In the formula, X is a single bond, or a group selected from CH ₂ , C(CH ₃ ) ₂ , SO ₂ , S, O and O(CO)O, and d, e, n are 0≤d≤0.25n , 0≤e<2n, 2d+e=2n, 3≤n≤1,000 are satisfied]

The epoxy resin composition for semiconductor sealing of the present invention to which the phosphazene compound represented by the above formula (1) is added is superior in hot water extraction characteristics as compared to the epoxy resin composition to which a phosphorus-based flame retardant such as red and phosphoric acid ester is added, A cured product having particularly excellent moisture resistance reliability can be obtained.

Here, in Formula (1), n is 3 to 1,000, but a more preferable range is 3 to 10. Synthesis is particularly preferably n=3.

The ratio of d and e is 0≤d≤0.25n, 0≤e<2n, and 2d+e=2n. At 0.25n<d, since the phosphazene compound has many intermolecular crosslinking, the softening point is high, it is difficult to be compatible with the epoxy resin, and the expected flame retardant effect cannot be obtained. The ratio of e is 0≦e<2n, but in order to achieve both at a high level of flame retardancy, it is preferable that it is 1.5n≦e≦1.97n.

In addition, when X is a single bond,

It is represented by

The amount of the phosphazene compound added is preferably 1 to 10 parts by mass, particularly 3 to 7 parts by mass, based on 100 parts by mass of the total amount of the components (A) and (B). If the amount is less than 1 part by mass, a sufficient flame retardant effect may not be obtained, and if it exceeds 10 parts by mass, the fluidity and glass transition temperature may be lowered.

In the epoxy resin composition for semiconductor sealing of the present invention, various additives can be further blended as needed. For example, thermoplastic resins, thermoplastic elastomers, organic synthetic rubbers, low stress agents such as silicone, carnauba wax, higher fatty acids, waxes such as synthetic waxes, coloring agents such as carbon black, hydrotalcite, etc. The additives can be added and blended within a range that does not impair the object of the present invention.

The epoxy resin composition for semiconductor sealing of the present invention, for example, an epoxy resin, a curing agent, an inorganic filler, bismuth hydroxide or bismuth hypocarbonate, a phosphazene compound, and other additives are mixed in a predetermined composition ratio, and this is sufficiently uniform by a mixer or the like. After mixing in such a manner that a hot roll, a kneader, an extruder or the like is used for a melt mixing treatment, it is then cooled and solidified, and pulverized to an appropriate size to obtain a molding material.

The epoxy resin composition for semiconductor sealing of the present invention thus obtained can be effectively used for sealing various semiconductor devices, and in this case, a low-pressure transfer molding method is mentioned as the most common method of sealing. In addition, it is preferable that the molding temperature of the epoxy resin composition for semiconductor sealing of the present invention is performed at 150 to 180°C for 30 to 180 seconds, and post-curing at 150 to 180°C for 2 to 16 hours.

<Example>

Hereinafter, examples and comparative examples of the epoxy resin composition are shown to specifically illustrate the present invention, but the present invention is not limited to the following examples.

[Synthesis Example A]

In a nitrogen atmosphere, sodium hydride (NaOH) 4.8 g (119 mmol) was suspended in tetrahydrofuran (THF) 50 ml at 0°C, and phenol 10.2 g (108 mmol), 4,4'-sulfonyldiphenol A solution of 0.45 g (1.8 mmol) of THF in 50 ml was added dropwise. After stirring for 30 minutes, a solution of 50 ml of THF of 12.5 g (36.0 mmol) of hexachlorotriphosphagen was added dropwise, followed by heating and refluxing for 5 hours. There, 5.2 g (130 mmol) of sodium hydride was separately suspended in 50 ml of THF at 0°C, a solution of 50 ml of THF of 11.2 g (119 mmol) of phenol was added dropwise thereto, followed by heating and refluxing for 19 hours. After distilling off the solvent under reduced pressure, chlorobenzene was added to dissolve it, and extracted with 200 ml×2 of 5% by mass NaOH aqueous solution, 200 ml×2 of 5% by mass sulfuric acid aqueous solution, 200 ml×2 of 5% by mass sodium hydrogen carbonate aqueous solution, and 200 ml×2 of water Did. The solvent was evaporated under reduced pressure to obtain 20.4 g of a yellowish-brown crystalline phosphazene compound A (phosphorus atomic weight: 13.36 mass%) represented by the following formula.

[Examples 1 to 5, Comparative Examples 1 to 7]

The components shown in Tables 1 and 2 were melt-mixed uniformly with a heat twin-screw roll, cooled, and pulverized to obtain an epoxy resin composition for semiconductor sealing. Using this composition, various properties of the following (i) to (iv) were measured, and the results are listed in Tables 1 and 2.

(i) flame retardancy

Based on the UL-94 standard, the flame retardancy of a 1/16 inch thick plate was investigated. Further, a 1/16 inch-thick plate was formed by molding under conditions of a temperature of 175°C, a molding pressure of 6.9 N/mm 2, and a molding time of 120 seconds, and post-curing at 180°C for 4 hours.

(ii) High-temperature storage Cu/Ag plated lead frame adhesion

The epoxy resin composition was molded on a 100pin-QFP frame (Cu alloy C7025, die pad portion Ag plating) under the conditions of a temperature of 175°C, a molding pressure of 6.9 N/mm 2, and a molding time of 120 seconds, and post-cured at 180°C for 4 hours. Package size 14×20×2.7mm. 20 of these packages were stored in an atmosphere at 250° C. for 96 hours, and then the presence or absence of peeling was examined using an ultrasonic flaw detector. What showed peeling in the area|area of 20% or more was made into defect, and the number of defects was investigated.

(iii) Cu wire high temperature reliability

A silicon chip of 7 x 7 mm size with aluminum wiring was adhered to a 100 pin-QFP frame (Cu alloy C7025, die pad part Ag plating), and the aluminum electrode and lead frame on the chip surface were connected with a 25 μmφ Cu line. After wire bonding, the epoxy resin composition was molded thereto at a temperature of 175°C, a molding pressure of 6.9 N/mm 2, and a molding time of 120 seconds, and post-cured at 180°C for 4 hours. Package size 14×20×2.7mm. After leaving 20 of these packages in an atmosphere at 200° C. for 1,000 hours, the resistance value was measured, and the ones that became 10 times or more of the initial value were regarded as defective, and the number of defectives was investigated.

(iv) Cu wire package, moisture resistance reliability

A silicon chip of 7 x 7 mm size with aluminum wiring was adhered to a 100 pin-QFP frame (Cu alloy C7025, die pad part Ag plating), and the aluminum electrode and lead frame on the chip surface were connected with a 25 μmφ Cu line. After wire bonding, the epoxy resin composition was molded thereto at a temperature of 175°C, a molding pressure of 6.9 N/mm 2, and a molding time of 120 seconds, and post-cured at 180°C for 4 hours. Package size 14×20×2.7mm. After leaving 20 of these packages in an atmosphere of 130 DEG C and 85%RH for 1,000 hours, the resistance value was measured, and the number of defects was determined as a defect that became 10 times or more of the initial value.

Epoxy resin 1: o-cresol novolak type epoxy resin, Epiclon N-665-EXP-S (manufactured by DIC, epoxy equivalent 200)

Epoxy resin 2: Epoxy resin represented by the following formula (2), EPPN-502H (made by Nippon Kayaku, Epoxy equivalent 168, hydrolyzable chlorine content 500 ppm, sodium content 1 ppm, potassium content 1 ppm)

(In the formula, a is an integer of 1 to 10)

Curing agent: Phenol novolak resin, DL-92 (made by Maywa Kasei, phenolic hydroxyl equivalent 110, sodium 1ppm, potassium 1ppm)

Inorganic filler: spherical fused silica (manufactured by Tatsumori, average particle diameter 20 µm)

Bismuth hydroxide (Nippon Chemical Industry Co., Ltd., nitrate ion content 6.0% by mass)

Bismuth tea carbonate (made by Nippon Chemical Industry Co., Ltd., 0.5% by mass of nitrate ions)

Phosphazene compound: phosphazene compound A obtained in Synthesis Example A

Bismuth oxide (made by Wako Junyaku)

Bismuth-based inorganic ion exchanger: IXE-500 (manufactured by Toa Kosei)

Antimony trioxide: PATOX CZ (made by Nippon Seiko)

Aluminum hydroxide: Higilite 320I (made by Showa Denko)

Aluminum oxide: AO-41R (manufactured by Admatex)

Hydrotalcite: DHT-4A-2 (made by Kyowa Chemical)

Curing accelerator: Triphenylphosphine (Hoko Chemical)

Release agent: Carnauba wax (manufactured by Nikko Fine Products)

Carbon Black: Denka Black (made by Denki Chemical Co., Ltd.)

Silane coupling agent 1: KBM-403, γ-glycidoxypropyltrimethoxysilane (Shin-Etsu Chemical Co., Ltd.)

Silane coupling agent 2: KBM-803P, γ-mercaptopropyltrimethoxysilane (Shin-Etsu Chemical Co., Ltd.)

As apparent from the results of Tables 1 and 2, the semiconductor device molded from the cured product of the epoxy resin composition for semiconductor sealing of the present invention has excellent adhesion to CuLF or Ag plating even when stored at a high temperature for a long time, and Cu There is no disconnection at the junction of the wire and the Cu wire/Al pad, and the reliability is excellent.

Moreover, since the resin composition does not contain an antimony compound such as a bromide such as a Br epoxy resin or an antimony trioxide, there is no adverse effect on the human body or the environment.

Claims (5)

(A) epoxy resin,
(B) a phenol resin as a curing agent in which the molar ratio of the phenolic hydroxyl groups contained in the phenol resin to 1 mol of the epoxy groups contained in the epoxy resin is in the range of 0.5 to 1.5,
(C) 400 to 1,200 parts by mass of an inorganic filler based on 100 parts by mass of the total amount of components (A) and (B),
(D) 3 to 10 parts by mass of bismuth hydroxide or bismuth hypocarbonate based on 100 parts by mass of the total amount of components (A) and (B),
(E) 1 to 10 parts by mass of a phosphazene compound represented by the following average composition formula (1) based on 100 parts by mass of the total amount of components (A) and (B)

[In the formula, X is a single bond, or a group selected from CH ₂ , C(CH ₃ ) ₂ , SO ₂ , S, O and O(CO)O, and d, e, n are 0≤d≤0.25n , 0≤e<2n, 2d+e=2n, 3≤n≤1,000 are satisfied]
Epoxy resin composition for semiconductor sealing, characterized in that as an essential component. The epoxy resin composition according to claim 1, wherein the epoxy equivalent of (A) the epoxy resin is less than 210. The epoxy resin composition according to claim 1 or 2, wherein the (A) epoxy resin is an epoxy resin represented by the following general formula (2).

(In the formula, a is an integer of 1 to 10) A semiconductor device sealed with a cured product of the epoxy resin composition according to claim 1 or 2. delete