KR102171734B1 - 멀티플 존 히터 - Google Patents

멀티플 존 히터 Download PDF

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Publication number
KR102171734B1
KR102171734B1 KR1020157029798A KR20157029798A KR102171734B1 KR 102171734 B1 KR102171734 B1 KR 102171734B1 KR 1020157029798 A KR1020157029798 A KR 1020157029798A KR 20157029798 A KR20157029798 A KR 20157029798A KR 102171734 B1 KR102171734 B1 KR 102171734B1
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South Korea
Prior art keywords
plate
heater
layer
shaft
semiconductor manufacturing
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Application number
KR1020157029798A
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English (en)
Korean (ko)
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KR20150132515A (ko
Inventor
브렌트 디. 엘리오트
프랭크 발마
알프레드 그랜트 엘리오트
알렉산더 베이트저
데니스 지. 렉스
리차드 이. 슈스터
Original Assignee
컴포넌트 알이-엔지니어링 컴퍼니, 인코포레이티드
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Priority claimed from US13/831,670 external-priority patent/US9984866B2/en
Application filed by 컴포넌트 알이-엔지니어링 컴퍼니, 인코포레이티드 filed Critical 컴포넌트 알이-엔지니어링 컴퍼니, 인코포레이티드
Publication of KR20150132515A publication Critical patent/KR20150132515A/ko
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Publication of KR102171734B1 publication Critical patent/KR102171734B1/ko
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68792—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the construction of the shaft
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00—Ohmic-resistance heating
    • H05B3/20—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater
    • H05B3/22—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible
    • H05B3/28—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible heating conductor embedded in insulating material
    • H05B3/283—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible heating conductor embedded in insulating material the insulating material being an inorganic material, e.g. ceramic
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B2203/00—Aspects relating to Ohmic resistive heating covered by group H05B3/00
    • H05B2203/002—Heaters using a particular layout for the resistive material or resistive elements
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B2203/00—Aspects relating to Ohmic resistive heating covered by group H05B3/00
    • H05B2203/037—Heaters with zones of different power density

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Resistance Heating (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Measuring Temperature Or Quantity Of Heat (AREA)
  • Surface Heating Bodies (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Control And Other Processes For Unpacking Of Materials (AREA)
KR1020157029798A 2013-03-15 2014-03-14 멀티플 존 히터 Active KR102171734B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13/831,670 2013-03-15
US13/831,670 US9984866B2 (en) 2012-06-12 2013-03-15 Multiple zone heater
PCT/US2014/028937 WO2014144502A1 (en) 2012-06-12 2014-03-14 Multiple zone heater

Publications (2)

Publication Number Publication Date
KR20150132515A KR20150132515A (ko) 2015-11-25
KR102171734B1 true KR102171734B1 (ko) 2020-10-29

Family

ID=53040011

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020157029798A Active KR102171734B1 (ko) 2013-03-15 2014-03-14 멀티플 존 히터

Country Status (5)

Country Link
EP (1) EP2973659A4 (enExample)
JP (1) JP6382295B2 (enExample)
KR (1) KR102171734B1 (enExample)
CN (1) CN105518825B (enExample)
TW (2) TWM644795U (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20250095085A (ko) 2023-12-19 2025-06-26 주식회사 에스지에스코리아 멀티 존 히터의 제어 장치 및 제어 방법

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102461150B1 (ko) 2015-09-18 2022-11-01 삼성전자주식회사 3차원 반도체 메모리 장치
WO2019084210A1 (en) 2017-10-24 2019-05-02 Component Re-Engineering Company, Inc. ELECTRICAL CONNECTOR WITH CERAMIC INSULATION AND ALUMINUM SLEEVE AND METHOD FOR MANUFACTURING THE SAME
WO2019189197A1 (ja) * 2018-03-28 2019-10-03 京セラ株式会社 ヒータ及びヒータシステム
KR102608397B1 (ko) * 2018-10-16 2023-12-01 주식회사 미코세라믹스 미들 영역 독립 제어 세라믹 히터
WO2020129754A1 (ja) * 2018-12-20 2020-06-25 日本碍子株式会社 セラミックヒータ
US20210111059A1 (en) * 2019-10-12 2021-04-15 Applies Materials, Inc. Wafer Heater With Backside And Integrated Bevel Purge
JP7240341B2 (ja) 2020-02-03 2023-03-15 日本碍子株式会社 セラミックヒータ及び熱電対ガイド
JP7202322B2 (ja) * 2020-02-03 2023-01-11 日本碍子株式会社 セラミックヒータ
JP7360992B2 (ja) * 2020-06-02 2023-10-13 京セラ株式会社 端子付構造体
KR102242589B1 (ko) * 2020-09-09 2021-04-21 주식회사 미코세라믹스 세라믹 히터
JP2024172480A (ja) * 2023-05-31 2024-12-12 株式会社Kokusai Electric 基板処理方法、半導体装置の製造方法、基板処理装置及びプログラム

Citations (4)

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JP2004247210A (ja) 2003-02-14 2004-09-02 Nhk Spring Co Ltd ヒータユニット及びヒータユニットの製造方法
JP2004356624A (ja) 2003-05-07 2004-12-16 Tokyo Electron Ltd 載置台構造及び熱処理装置
JP2012069947A (ja) 2010-09-24 2012-04-05 Ngk Insulators Ltd サセプター及びその製法
JP2012080103A (ja) 2010-10-01 2012-04-19 Ngk Insulators Ltd サセプター及びその製法

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US4854495A (en) * 1986-06-20 1989-08-08 Hitachi, Ltd. Sealing structure, method of soldering and process for preparing sealing structure
US6583638B2 (en) * 1999-01-26 2003-06-24 Trio-Tech International Temperature-controlled semiconductor wafer chuck system
KR20010111058A (ko) * 2000-06-09 2001-12-15 조셉 제이. 스위니 전체 영역 온도 제어 정전기 척 및 그 제조방법
JP3897563B2 (ja) * 2001-10-24 2007-03-28 日本碍子株式会社 加熱装置
JP2005166354A (ja) * 2003-12-01 2005-06-23 Ngk Insulators Ltd セラミックヒーター
US20080093315A1 (en) * 2004-10-29 2008-04-24 Epicrew Corporation Support for Semiconductor Substrate
JP4787568B2 (ja) * 2004-11-16 2011-10-05 日本碍子株式会社 接合剤、窒化アルミニウム接合体及びその製造方法
JP4640842B2 (ja) * 2006-10-11 2011-03-02 日本碍子株式会社 加熱装置
JP4450106B1 (ja) * 2008-03-11 2010-04-14 東京エレクトロン株式会社 載置台構造及び処理装置
JP5791412B2 (ja) * 2010-07-26 2015-10-07 日本碍子株式会社 セラミックヒーター
JP5501467B2 (ja) * 2010-09-24 2014-05-21 日本碍子株式会社 半導体製造装置部材
US20120211484A1 (en) * 2011-02-23 2012-08-23 Applied Materials, Inc. Methods and apparatus for a multi-zone pedestal heater
US20130334199A1 (en) * 2011-03-01 2013-12-19 Applied Materials, Inc. Thin heated substrate support

Patent Citations (4)

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Publication number Priority date Publication date Assignee Title
JP2004247210A (ja) 2003-02-14 2004-09-02 Nhk Spring Co Ltd ヒータユニット及びヒータユニットの製造方法
JP2004356624A (ja) 2003-05-07 2004-12-16 Tokyo Electron Ltd 載置台構造及び熱処理装置
JP2012069947A (ja) 2010-09-24 2012-04-05 Ngk Insulators Ltd サセプター及びその製法
JP2012080103A (ja) 2010-10-01 2012-04-19 Ngk Insulators Ltd サセプター及びその製法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20250095085A (ko) 2023-12-19 2025-06-26 주식회사 에스지에스코리아 멀티 존 히터의 제어 장치 및 제어 방법

Also Published As

Publication number Publication date
TWI632589B (zh) 2018-08-11
KR20150132515A (ko) 2015-11-25
CN105518825A (zh) 2016-04-20
CN105518825B (zh) 2018-02-06
JP2016522881A (ja) 2016-08-04
JP6382295B2 (ja) 2018-08-29
TWM644795U (zh) 2023-08-11
TW201506989A (zh) 2015-02-16
EP2973659A4 (en) 2016-11-09
EP2973659A1 (en) 2016-01-20

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