KR102170584B1 - 플라즈마 처리 방법 및 플라즈마 처리 장치 - Google Patents

플라즈마 처리 방법 및 플라즈마 처리 장치 Download PDF

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Publication number
KR102170584B1
KR102170584B1 KR1020140032018A KR20140032018A KR102170584B1 KR 102170584 B1 KR102170584 B1 KR 102170584B1 KR 1020140032018 A KR1020140032018 A KR 1020140032018A KR 20140032018 A KR20140032018 A KR 20140032018A KR 102170584 B1 KR102170584 B1 KR 102170584B1
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South Korea
Prior art keywords
gas
processing
tungsten layer
plasma
etching
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KR1020140032018A
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Korean (ko)
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KR20140117282A (ko
Inventor
마사유키 사와타이시
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도쿄엘렉트론가부시키가이샤
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Publication of KR20140117282A publication Critical patent/KR20140117282A/ko
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H10P50/267—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
KR1020140032018A 2013-03-26 2014-03-19 플라즈마 처리 방법 및 플라즈마 처리 장치 Active KR102170584B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2013064713A JP6077354B2 (ja) 2013-03-26 2013-03-26 プラズマ処理方法及びプラズマ処理装置
JPJP-P-2013-064713 2013-03-26

Publications (2)

Publication Number Publication Date
KR20140117282A KR20140117282A (ko) 2014-10-07
KR102170584B1 true KR102170584B1 (ko) 2020-10-27

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KR1020140032018A Active KR102170584B1 (ko) 2013-03-26 2014-03-19 플라즈마 처리 방법 및 플라즈마 처리 장치

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JP (1) JP6077354B2 (https=)
KR (1) KR102170584B1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10043684B1 (en) * 2017-02-06 2018-08-07 Applied Materials, Inc. Self-limiting atomic thermal etching systems and methods
CN113284797B (zh) * 2020-02-20 2022-10-18 长鑫存储技术有限公司 半导体存储器的制作方法
US11631589B2 (en) * 2021-05-04 2023-04-18 Applied Materials, Inc. Metal etch in high aspect-ratio features

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005302840A (ja) 2004-04-07 2005-10-27 Elpida Memory Inc 半導体装置の製造方法
JP2008053496A (ja) * 2006-08-25 2008-03-06 Sumitomo Precision Prod Co Ltd エッチング装置

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09246245A (ja) * 1996-03-13 1997-09-19 Toshiba Corp 半導体装置の製造方法
JPH11340213A (ja) * 1998-03-12 1999-12-10 Hitachi Ltd 試料の表面加工方法
JP3986808B2 (ja) 2001-04-23 2007-10-03 東京エレクトロン株式会社 ドライエッチング方法
JP2005109035A (ja) * 2003-09-29 2005-04-21 Toshiba Corp 半導体装置の製造方法
JP4704087B2 (ja) * 2005-03-31 2011-06-15 東京エレクトロン株式会社 プラズマ処理装置およびプラズマ処理方法
US7368394B2 (en) * 2006-02-27 2008-05-06 Applied Materials, Inc. Etch methods to form anisotropic features for high aspect ratio applications
JP2009193989A (ja) * 2008-02-12 2009-08-27 Tokyo Electron Ltd プラズマエッチング方法、プラズマエッチング装置及びコンピュータ記憶媒体

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005302840A (ja) 2004-04-07 2005-10-27 Elpida Memory Inc 半導体装置の製造方法
KR100675058B1 (ko) * 2004-04-07 2007-01-26 엘피다 메모리 가부시키가이샤 Ｗ/ＷＮ/Ｐｏｌｙ-Ｓｉ층으로 된 막을 갖는 반도체장치의제조방법
JP2008053496A (ja) * 2006-08-25 2008-03-06 Sumitomo Precision Prod Co Ltd エッチング装置

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Publication number Publication date
JP2014192245A (ja) 2014-10-06
KR20140117282A (ko) 2014-10-07
JP6077354B2 (ja) 2017-02-08

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