KR102143515B1 - Heating pipe for semiconductor manufacuring facilities - Google Patents

Heating pipe for semiconductor manufacuring facilities Download PDF

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KR102143515B1
KR102143515B1 KR1020190060663A KR20190060663A KR102143515B1 KR 102143515 B1 KR102143515 B1 KR 102143515B1 KR 1020190060663 A KR1020190060663 A KR 1020190060663A KR 20190060663 A KR20190060663 A KR 20190060663A KR 102143515 B1 KR102143515 B1 KR 102143515B1
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South Korea
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pipe
pipe body
heating
circumferential surface
outer circumferential
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KR1020190060663A
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Korean (ko)
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박문수
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동주에이피 주식회사
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
    • F16L—PIPES; JOINTS OR FITTINGS FOR PIPES; SUPPORTS FOR PIPES, CABLES OR PROTECTIVE TUBING; MEANS FOR THERMAL INSULATION IN GENERAL
    • F16L53/00—Heating of pipes or pipe systems; Cooling of pipes or pipe systems
    • F16L53/30—Heating of pipes or pipe systems
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Resistance Heating (AREA)

Abstract

The present invention relates to a heating pipe for semiconductor manufacturing facilities which has a structure in which heat lines are buried in an aluminum alloy layer by performing a die casting with the heat lines wound in a spiral shape on the outer circumferential surface of a pipe used for the semiconductor manufacturing facilities. The heating pipe comprises: a pipe unit which includes a cylindrical pipe body and flanges placed on both ends in a longitudinal direction of the pipe body; a heat generation unit which includes a casing made of stainless steel and the heat lines placed in the center of the casing; a heat conduction unit which includes a fixing plate which fixes the casing onto the outer circumferential surface of the pipe body and a die casting layer formed on the outer circumferential surface of the pipe body; and a control unit which includes a temperature sensor, bimetal, and a controller. The die casting layer is made of aluminum alloy and its internal diameter is the same as the external diameter of the pipe body. Its external diameter is a size which can allow the heat generation unit and the fixing plate to be buried together. The temperature sensor and the bimetal are placed on an accommodation groove formed on the die casting layer. The controller is electrically connected to the temperature sensor, the bimetal, and the heat lines. The present invention aims to provide a heating pipe for semiconductor manufacturing facilities, which is able to have a structure in which the aluminum alloy layer is formed on the outer circumferential surface of the pipe and the heat lines are wound on the border surface in a spiral pattern.

Description

반도체 제조설비용 히팅파이프{Heating pipe for semiconductor manufacuring facilities}Heating pipe for semiconductor manufacuring facilities}

본 발명은 반도체 제조설비용 히팅파이프에 관한 것으로서, 더욱 상세하게는반도체 제조설비에 사용되는 배관의 외주면에 열선을 나선형으로 감은 상태에서 다이캐스팅을 실시, 형성된 알루미늄 합금층에 열선이 매몰되는 구조를 갖는 반도체 제조설비용 히팅파이프에 관한 것이다.The present invention relates to a heating pipe for a semiconductor manufacturing facility, and more particularly, a structure in which a heating wire is buried in an aluminum alloy layer formed by performing die casting in a state in which a heating wire is spirally wound around the outer circumferential surface of a pipe used in a semiconductor manufacturing facility. It relates to a heating pipe for semiconductor manufacturing equipment.

반도체 제조 공정에서는 웨이퍼 상에 특정 패턴의 회로를 형성하기 위해 화학증착법(CVD)이나 에칭(etching) 등의 공정이 수행되며 여기에는 다양한 반응 가스가 사용된다. In a semiconductor manufacturing process, processes such as chemical vapor deposition (CVD) or etching are performed to form a circuit of a specific pattern on a wafer, and various reaction gases are used for this.

이러한 반응 가스는 활성화를 위해 고온인 상태로 사용되며 저온 상태에서는 쉽게 응결되는 특성이 있다. 이로 인해 열손실이 용이한 이송 중에 쉽게 응결, 응결된 고형분이 밸브나 펌프에 고착되어 고장을 유발하거나, 배관 내벽에 적층되어 반응 가스의 흐름을 방해하는 일이 종종 발생한다.Such a reaction gas is used in a high temperature state for activation, and has a characteristic of being easily condensed in a low temperature state. For this reason, it often occurs that condensed and condensed solids are easily condensed and condensed during transport where heat loss is easy to adhere to valves or pumps to cause failure, or are stacked on the inner wall of the pipe to obstruct the flow of the reaction gas.

현재, 반도체 제조설비용 배관에는 이러한 응결을 방지하기 위해 열선 코일이 내장된 히팅자켓으로 배관을 감싸는 방식이 이용되고 있다. Currently, in pipes for semiconductor manufacturing facilities, in order to prevent such condensation, a method of wrapping the pipe with a heating jacket with a built-in heating coil is used.

일례로 국내등록특허 제10-1499582호(등록일자: 2015.03.02.)에 소개된 히팅자켓을 도 1을 통해 살펴보면, 내부에 열선이 지그재그 형태로 배치된 커버몸체(100)가 길이방향 단부에 구비되는 연결커버(700)를 통해 이웃하는 커버몸체(100)와 연결 고정할 수 있게 개시, 이를 통해 히팅자켓 노후시 교체나 배관 설계변경시 히팅자켓 이음 변경을 용이하도록 하였다.For example, looking at the heating jacket introduced in Korean Patent No. 10-1499582 (registration date: 2015.03.02.) through FIG. 1, the cover body 100 in which the heating wire is arranged in a zigzag shape is at the end in the longitudinal direction. Initiated to be connected and fixed with the neighboring cover body 100 through the provided connection cover 700, through which it was facilitated to change the heating jacket joint when replacing the heating jacket when it is aging or changing the pipe design.

다만, 상기 히팅자켓은 도 2에 도시되어 있는 바와 같이 소정의 두께를 갖는 열선고정커버(300)에 열선(200)이 고정되고 또한 커버몸체(100)가 벨크로를 통해 배관에 고정되는 구성으로 인해, 열선(200)과 배관과의 유격이 불균일해져 정밀한 온도 제어가 곤란하고, 특히 유격 불균일로 인해 과열된 부위의 코일이 탄화되어 히팅자켓의 수명이 단축되는 문제가 있다.However, the heating jacket has a configuration in which the heating wire 200 is fixed to the heating wire fixing cover 300 having a predetermined thickness as shown in FIG. 2 and the cover body 100 is fixed to the pipe through Velcro. , As the gap between the heating wire 200 and the pipe becomes non-uniform, precise temperature control is difficult, and in particular, the coil of the overheated area is carbonized due to the gap non-uniformity, thereby shortening the life of the heating jacket.

한편, 다이캐스팅(Diecasting)은 알루미늄이나 구리 등 철에 비해 융점이 낮은 금속의 용탕을 철제 금형에 주입하여 주물을 얻는 주조법으로서, 기계적 성질이 우수하고 특히 복잡한 형상의 주물이나 높은 치수 정밀도가 요구되는 주물을 대량으로 생산할 수 있어, 자동차이나 산업기계의 부품 제작에 널리 이용된다.On the other hand, diecasting is a casting method in which a molten metal with a lower melting point than iron such as aluminum or copper is injected into an iron mold to obtain a casting.It has excellent mechanical properties and is a casting with particularly complex shapes or castings requiring high dimensional accuracy. Can be produced in large quantities, so it is widely used in manufacturing parts for automobiles and industrial machinery.

본 발명은 알루미늄이 열전도성이 우수한 점(철에 비해 대략 3배)과, 다이캐스팅 공법이 복잡한 형상 및 높은 치수 정밀도가 요구되는 주물을 대량 생산할 수 있다는 점에 주목, 복잡한 형상을 갖는 배관-열선 결합체에 다이캐스팅을 통해 알루미늄 층을 형성하면 양호한 열전도로 인해 소비전력을 낮출 수 있고 특히, 배관과 열선간의 유격이 균일해져 정밀한 온도제어가 가능하고 열선의 내구성이 향상될 수 있을 것으로 판단하여 본 발명을 개시하게 되었다.The present invention pays attention to the fact that aluminum has excellent thermal conductivity (approximately 3 times that of iron) and that the die-casting method can mass-produce castings requiring complex shapes and high dimensional precision, and piping-heat wire assembly having a complex shape In the case of forming an aluminum layer through die casting, power consumption can be lowered due to good heat conduction, and in particular, precise temperature control is possible due to uniform clearance between the pipe and the heating wire, and the durability of the heating wire can be improved, and the present invention is disclosed. Was done.

KR 10-1499582 B1 2015.03.02.KR 10-1499582 B1 2015.03.02.

본 발명에서 해결하고자 하는 과제는, 배관 외주면에 알루미늄 합금층이 형성되되 그 경계면에 나선형으로 감겨진 열선이 배치되는 구조를 갖는 반도체 제조설비용 히팅파이프를 제공하는 것이다.The problem to be solved in the present invention is to provide a heating pipe for a semiconductor manufacturing facility having a structure in which an aluminum alloy layer is formed on an outer circumferential surface of a pipe, and a hot wire wound in a spiral shape is arranged at the interface.

상기 과제를 해결하기 위한 본 발명의 반도체 제조설비용 히팅파이프는, 원통형의 파이프바디와 상기 파이프바디의 길이방향 양단에 구비되는 플랜지로 이루어지는 배관부; 스테인리스 재질의 케이싱, 상기 케이싱 중심에 배치되는 열선을 포함하는 발열부; 상기 케이싱을 파이프바디의 외주면에 고정하는 고정판과 상기 파이프바디의 외주면에 형성되는 다이캐스팅층으로 이루어지는 열전도부; 및 온도센서, 바이메탈과 콘트롤러로 이루어지는 제어부;를 포함하여 이루어지며, 상기 다이캐스팅층은 알루미늄 합금 재질로 이루어지고 내경은 파이프바디의 외경과 동일하고 외경은 발열부와 고정판이 함께 매몰될 수 있는 크기로 구비되며, 상기 온도센서와 바이메탈은 상기 다이캐스팅층에 형성된 수용홈에 구비되고, 상기 콘트롤러는 상기 온도센서, 바이메탈, 열선과 전기적으로 연결되는 것을 특징으로 한다.The heating pipe for a semiconductor manufacturing facility of the present invention for solving the above problems includes: a pipe body comprising a cylindrical pipe body and flanges provided at both ends of the pipe body in the longitudinal direction; A heating part including a stainless steel casing and a heating wire disposed at the center of the casing; A heat conduction unit comprising a fixing plate fixing the casing to an outer circumferential surface of the pipe body and a die casting layer formed on the outer circumferential surface of the pipe body; And a control unit consisting of a temperature sensor, a bimetal, and a controller, wherein the die-casting layer is made of an aluminum alloy material, the inner diameter is the same as the outer diameter of the pipe body, and the outer diameter is such that the heating unit and the fixing plate can be buried together. The temperature sensor and the bimetal are provided in the receiving groove formed in the die-casting layer, and the controller is electrically connected to the temperature sensor, the bimetal, and the heating wire.

또한, 본 발명의 반도체 제조설비용 히팅파이프는, 상기 케이싱이 파이프바디의 외주면에 나선형으로 감겨져 배치되고, 상기 고정판은 파형 형상을 갖되 파형 간격이 상기 케이싱의 나선 간격과 대응되도록 개시되어, 파형 골 부위마다 케이싱이 걸림 고정되는 것을 특징으로 한다.In addition, the heating pipe for a semiconductor manufacturing facility of the present invention is arranged so that the casing is wound spirally on the outer circumferential surface of the pipe body, and the fixing plate has a corrugated shape, but the corrugated spacing corresponds to the spiral spacing of the casing. It characterized in that the casing is fixed to each part.

또한, 본 발명의 반도체 제조설비용 히팅파이프는, 상기 다이캐스팅층의 재질인 알루미늄 합금이 총중량 100에 대해 규소가 7.5 ~ 13의 중량 비율로 첨가되는 알루미늄 합금인 것을 특징으로 한다.In addition, the heating pipe for a semiconductor manufacturing facility of the present invention is characterized in that the aluminum alloy, which is a material of the die casting layer, is an aluminum alloy in which silicon is added in a weight ratio of 7.5 to 13 with respect to the total weight of 100.

또한, 본 발명의 반도체 제조설비용 히팅파이프는, 상기 파이프바디의 내벽에 웰이 돌출 형성되고 상기 웰에 상기 온도센서의 센서팁이 삽입 배치되는 것을 특징으로 한다.In addition, the heating pipe for a semiconductor manufacturing facility of the present invention is characterized in that a well is formed protruding from an inner wall of the pipe body, and a sensor tip of the temperature sensor is inserted into the well.

아울러, 본 발명의 반도체 제조설비용 히팅파이프는, 상기 다이캐스팅층의 외주면에 단열부가 더 구비되고, 상기 단열부는 다이캐스팅층의 외주면을 감싸는 단열재 및 상기 단열재의 외주면에 부착되는 코팅층으로 이루어지며, 상기 코팅층의 재질은 테프론 코팅 유리섬유인 것을 특징으로 한다.In addition, the heating pipe for a semiconductor manufacturing facility of the present invention is further provided with a heat insulating part on the outer circumferential surface of the die-casting layer, the heat insulating part is made of a heat insulating material surrounding the outer circumferential surface of the die casting layer and a coating layer attached to the outer circumferential surface of the heat insulating material The material is characterized in that the Teflon coated glass fiber.

본 발명의 반도체 제조설비용 히팅파이프에 의하면, 알루미늄 합금으로 이루어진 다이캐스팅층을 통해 파이프바디로 열전도가 원활히 이루어지므로 적은 소비전력으로도 파이프바디의 적정 온도를 유지할 수 있고 또한, 파이프바디의 원주면에 나선형으로 배치되는 발열부가 다이캐스팅층을 통해 고정되는 구성을 통해 배관과 열선간의 유격이 균일해져 정밀한 온도제어가 가능하고 열선의 내구성이 향상되므로 본 발명에 따른 히팅파이프의 상품 경쟁력이 향상된다.According to the heating pipe for a semiconductor manufacturing facility of the present invention, since heat conduction is smoothly performed to the pipe body through a die-casting layer made of aluminum alloy, it is possible to maintain an appropriate temperature of the pipe body with little power consumption. Through the configuration in which the heating part arranged in a spiral is fixed through the die-casting layer, the clearance between the pipe and the heating wire becomes uniform so that precise temperature control is possible and the durability of the heating wire is improved, so that the product competitiveness of the heating pipe according to the present invention is improved.

도 1은 종래기술에 따른 반도체 제조설비용 히팅자켓의 실시 상태를 도시한 사시도이다.
도 2는 종래기술에 따른 반도체 제조설비용 히팅자켓의 전개도이다.
도 3은 본 발명에 따른 반도체 제조설비용 히팅파이프를 도시한 사시도이다.
도 4는 본 발명에 따른 반도체 제조설비용 히팅파이프의 발열부를 도시한 단면도이다.
도 5는 본 발명에 따른 반도체 제조설비용 히팅파이프의 종단면도이다.
도 6은 본 발명에 따른 반도체 제조설비용 히팅파이프의 길이방향 단면도이다.1 is a perspective view showing an embodiment of a heating jacket for a semiconductor manufacturing facility according to the prior art.
2 is an exploded view of a heating jacket for a semiconductor manufacturing facility according to the prior art.
3 is a perspective view showing a heating pipe for a semiconductor manufacturing facility according to the present invention.
4 is a cross-sectional view showing a heating part of a heating pipe for a semiconductor manufacturing facility according to the present invention.
5 is a longitudinal cross-sectional view of a heating pipe for a semiconductor manufacturing facility according to the present invention.
6 is a longitudinal cross-sectional view of a heating pipe for a semiconductor manufacturing facility according to the present invention.

이하 첨부된 도면을 참조하여 본 발명의 바람직한 실시예를 더욱 상세하게 설명한다.Hereinafter, preferred embodiments of the present invention will be described in more detail with reference to the accompanying drawings.

도 3은 본 발명에 따른 반도체 제조설비용 히팅파이프를 도시한 사시도이고, 도 4는 본 발명에 따른 반도체 제조설비용 히팅파이프의 발열부를 도시한 단면도이며, 도 5는 본 발명에 따른 반도체 제조설비용 히팅파이프의 종단면도이고, 도 6은 본 발명에 따른 반도체 제조설비용 히팅파이프의 길이방향 단면도이다.3 is a perspective view showing a heating pipe for a semiconductor manufacturing facility according to the present invention, FIG. 4 is a cross-sectional view showing a heating part of the heating pipe for a semiconductor manufacturing facility according to the present invention, and FIG. 5 is a semiconductor manufacturing facility according to the present invention It is a longitudinal sectional view of a heating pipe for, and Fig. 6 is a longitudinal sectional view of the heating pipe for a semiconductor manufacturing facility according to the present invention.

도 3, 도 4, 도 5 및 도 6을 참조하면, 본 발명은 배관부(10), 상기 배관부(10) 외주면에 배치되는 발열부(20), 배관부(10)와 발열부(20)를 감싸는 열전도부(30), 발열부(20)와 전기적으로 연결되고 일부가 열전도부(30)에 구비되는 제어부(40) 및 상기 열전도부(30)를 감싸는 단열부(50)로 이루어진다.3, 4, 5 and 6, the present invention relates to a pipe part 10, a heating part 20 disposed on an outer circumferential surface of the pipe part 10, a pipe part 10, and a heating part 20. ), a heat-conducting part 30 surrounding the heat-conducting part 30, a control part 40 electrically connected to the heat-generating part 20 and partially provided in the heat-conducting part 30, and an insulating part 50 surrounding the heat-conducting part 30.

이하, 상기 구성 요소들을 중심으로 본 발명의 구체적인 내용을 설명하면, 먼저 배관부(10)는 반도체 제조설비용 배관으로서, 길이방향으로 일정한 관경을 갖는 원통형의 파이프바디(11)와 상기 파이프바디(11)의 길이방향 양단에 구비되는 플랜지(13)로 이루어진다.Hereinafter, the specific contents of the present invention will be described based on the above constituent elements. First, the pipe part 10 is a pipe for a semiconductor manufacturing facility, and the cylindrical pipe body 11 and the pipe body having a constant pipe diameter in the longitudinal direction ( 11) consists of flanges 13 provided at both ends in the longitudinal direction.

발열부(20)는 파이프바디(11) 외주면에 배치된 상태에서 제어부(40)의 제어신호에 따라 외부로부터 인가되는 전기를 열로 변환시키는 구성으로서, 도 4에 도시되어 있는 바와 같이 케이싱(21), 상기 케이싱(21) 중심에 배치되는 열선(23) 및 케이싱(21)의 나머지 내부 공간에 충진되는 절연층(25)으로 이루어진다.The heating unit 20 is a configuration that converts electricity applied from the outside into heat according to a control signal from the control unit 40 in a state disposed on the outer circumferential surface of the pipe body 11, and as shown in FIG. 4, the casing 21 , Consisting of a heating wire 23 disposed in the center of the casing 21 and an insulating layer 25 filled in the remaining inner space of the casing 21.

상기 케이싱(21)은 다이캐스팅 과정에서 고온의 용탕으로부터 열선(23)을 보호하기 위해 통상 스테인리스 재질의 배관 형상으로 개시되며, 파이프바디(11)의 외주면에 나선형 형태로 배치된다.The casing 21 is generally started in the shape of a stainless steel pipe in order to protect the hot wire 23 from hot molten metal during the die casting process, and is arranged in a spiral shape on the outer peripheral surface of the pipe body 11.

열전도부(30)는 발열부(20)에 의해 생성된 열이 파이프바디(11)로 유입되도록 하는 구성으로서, 상기 케이싱(21)을 파이프바디(11)의 외주면에 고정시키는 고정판(31) 및, 다이캐스팅을 통해 파이프바디(11)의 외주면에 형성되되 내경은 파이프바디(11)의 외경과 동일하고 외경은 발열부(20)와 고정판(31)이 함께 매몰될 수 있는 크기로 구비되는 다이캐스팅층(33)으로 이루어진다.The heat conduction unit 30 is a configuration that allows heat generated by the heating unit 20 to flow into the pipe body 11, and a fixing plate 31 for fixing the casing 21 to the outer circumferential surface of the pipe body 11 and , A die-casting layer formed on the outer circumferential surface of the pipe body 11 through die casting, the inner diameter being the same as the outer diameter of the pipe body 11, and the outer diameter having a size that allows the heating part 20 and the fixing plate 31 to be buried together It consists of (33).

발열부(20)의 나선 간격은 통상 등간격으로 배치되나 필요에 따라 특정 구간에 집중 배치되거나 또는 간격이 점진적으로 넓어지거나 좁아지는 형태로 개시될 수 있다. 다만, 다이캐스팅의 용탕 주입은 고속, 고압으로 이루어지는 특성상 주입 과정에서 발열부(20)의 초기 설정된 나선 간격이 변동될 소지가 있다.The spiral spacing of the heating unit 20 is usually disposed at equal intervals, but may be intensively disposed in a specific section as necessary, or may be started in a form in which the spacing gradually widens or narrows. However, the injection of the molten metal in die casting is performed at high speed and high pressure, so there is a possibility that the initial set helical spacing of the heating unit 20 may change during the injection process.

상기 고정판(31)은 파형 형상을 갖되 파형 간격이 케이싱(21)의 나선 간격과 대응되도록 개시되어, 파형 골 부위마다 케이싱(21)이 걸림 고정되도록 함으로써 상기 문제를 해소하는 역할을 한다. The fixing plate 31 has a corrugated shape, but the corrugated spacing is started to correspond to the helical spacing of the casing 21, so that the casing 21 is engaged and fixed for each corrugated valley region, thereby solving the above problem.

또한, 파이프바디(11)의 관경이 커질수록 하나의 고정판(31)으로는 케이싱(21)의 모든 나선 구간이 등간격을 유지하기 곤란하므로, 도 5에 도시되어 있는 바와 같이 복수의 고정판(31)이 상호 등간격을 이루며 파이프바디(11)의 외주면에 배치 고정된다.In addition, as the tube diameter of the pipe body 11 increases, it is difficult to maintain equal intervals in all the helical sections of the casing 21 with one fixing plate 31. As shown in FIG. 5, a plurality of fixing plates 31 ) Are arranged and fixed on the outer circumferential surface of the pipe body 11 at equal intervals.

다이캐스팅층(33)은 원통형 형상의 금형 중심에 발열부(20)와 고정판(31)이 부착된 파이프바디(11)를 배치한 상태에서 알루미늄 합금을 주입, 응고시켜 만드는데, 일반적인 알루미늄 다이캐스팅에서는 주물의 기계적 성질을 높이거나 주조 작업의 편의를 위해 구리, 규소, 마그네슘 등이 첨가된다.The die-casting layer 33 is made by injecting and solidifying an aluminum alloy with the heating part 20 and the pipe body 11 attached to the fixing plate 31 arranged in the center of a cylindrical mold. Copper, silicon, magnesium, etc. are added to enhance mechanical properties or to facilitate casting.

본 발명에서는 규소가 용탕의 유동성을 향상시키는 점에 주목, 파이프바디(11), 발열부(20)와 고정판(31) 경계부위의 복잡한 캐비티(cavity) 공간에 용탕이 충분히 주입될 수 있도록, 규소의 성분 비중이 높은 알루미늄 합금 용탕을 사용한다.In the present invention, attention is paid to the fact that silicon improves the fluidity of the molten metal, so that the molten metal can be sufficiently injected into the complex cavity space between the pipe body 11, the heating part 20 and the fixing plate 31 An aluminum alloy molten metal with a high component specific gravity is used.

다만, 규소의 비중이 높을수록 핀홀(pin hole) 등의 기포 결함이 우려되는 바, 알루미늄 합금의 총중량 100에 대해 규소 중량이 7.5 ~ 13의 비율로 첨가되는 알루미늄 합금 용탕을 사용하는 것이 바람직하다.However, the higher the specific gravity of silicon, the more concerned about bubble defects such as pinholes, and it is preferable to use a molten aluminum alloy in which the silicon weight is added in a ratio of 7.5 to 13 with respect to the total weight of the aluminum alloy 100.

한편, 알루미늄의 경우 열팽창계수가 철보다 약 2배 높은데, 규소의 비중이 높을수록 알루미늄 합금의 열팽창계수를 낮추는 특성이 있어, 히팅파이프의 내구성을 향상시키는 부수적 효과를 얻을 수 있다.On the other hand, in the case of aluminum, the coefficient of thermal expansion is about twice as high as that of iron, and the higher the specific gravity of silicon, the lower the coefficient of thermal expansion of the aluminum alloy, so that a side effect of improving the durability of the heating pipe can be obtained.

즉, 파이프바디(11) 내부온도를 적정 범위의 온도로 유지하기 위해 열선(23)의 전력 공급이 단속적으로 이루어지게 되고 이와 연동되어 철강 재질의 케이싱(21)과 알루미늄 재질의 다이캐스팅층(33)이 팽창과 수축을 반복하게 된다.That is, in order to maintain the internal temperature of the pipe body 11 in an appropriate range, the power supply of the heating wire 23 is intermittently performed, and interlocked with this, the steel casing 21 and the aluminum die-casting layer 33 This expansion and contraction are repeated.

이러한 팽창/수축의 반복시 열팽창계수의 차 즉 각 재질의 팽창/수축 정도의 차이로, 초기 상호 밀착되어 있는 케이싱(21)와 다이캐스팅층(33)이 분리될 수 있고 이로 인해 열전도율 저하로 전력소비가 증가하게 된다.When such expansion/contraction is repeated, due to the difference in the coefficient of thermal expansion, that is, the degree of expansion/contraction of each material, the casing 21 and the die-casting layer 33, which are initially in close contact with each other, can be separated, resulting in a decrease in thermal conductivity and power consumption. Will increase.

이에, 본 발명에서는 규소 비중이 높은 알루미늄 합금을 사용하여 이러한 열팽창계수 차를 좁힘으로써, 케이싱(21)와 다이캐스팅층(33)의 분리를 지연, 히팅파이프의 내구성이 향상되도록 한다.Accordingly, in the present invention, by using an aluminum alloy having a high silicon specific gravity to narrow the difference in thermal expansion coefficient, the separation of the casing 21 and the die-casting layer 33 is delayed, and the durability of the heating pipe is improved.

제어부(40)는 열선(23)에 인가되는 전기를 제어하여 파이프바디(11) 내부가 적정 온도(반응가스의 응결이 방지되는 온도)를 유지하도록 하는 구성으로서, 다이캐스팅층(33) 일단에 형성된 수용홈(33a)에 구비되는 온도센서(41)와 바이메탈(43) 및, 상기 온도센서(41), 바이메탈(43), 열선(23)과 전기적으로 연결되는 콘트롤러로 이루어진다.The control unit 40 is configured to control electricity applied to the heating wire 23 so that the inside of the pipe body 11 maintains an appropriate temperature (a temperature at which condensation of reaction gas is prevented), and is formed at one end of the die casting layer 33. It consists of a temperature sensor 41 and a bimetal 43 provided in the receiving groove 33a, and a controller electrically connected to the temperature sensor 41, the bimetal 43, and the heating wire 23.

여기서, 상기 수용홈(33a)은 통상 캐스팅층(33) 일단에 구비되나 필요에 따라 캐스팅층(33)의 임의의 위치에 형성될 수 있다.Here, the receiving groove 33a is usually provided at one end of the casting layer 33, but may be formed at any position of the casting layer 33 if necessary.

상기 온도센서(41)는 파이프바디(11)의 내부 온도를 실시간으로 측정, 그 측정값을 상기 콘트롤러에 제공하는데, 보다 정밀한 온도 측정을 위해 파이프바디(11)의 내벽에는 웰(well)(11a)이 돌출 형성되고 상기 웰(11a)에 온도센서(41)의 센서팁이 삽입 배치된다.The temperature sensor 41 measures the internal temperature of the pipe body 11 in real time and provides the measured value to the controller. For more precise temperature measurement, a well 11a is provided on the inner wall of the pipe body 11. ) Is formed protruding and the sensor tip of the temperature sensor 41 is inserted and disposed in the well 11a.

상기 바이메탈(43)은 열선(23)과 연결된 상태에서 불측의 과전류가 열선(23)에 인가되어 단선되는 것을 차단하는 역할을 한다.The bimetal 43 serves to block disconnection by applying an unsided overcurrent to the heating wire 23 while being connected to the heating wire 23.

상기 콘트롤러는 온도센서(41)로부터 제공받은 측정값을 토대로 파이프바디(11)의 내부 온도가 적정 범위를 유지할 수 있도록 열선(23)의 전기 인가를 제어한다.The controller controls the application of electricity to the heating wire 23 so that the internal temperature of the pipe body 11 can be maintained within an appropriate range based on the measured value provided from the temperature sensor 41.

단열부(50)는 발열부(20)에서 다이캐스팅층(33)으로 전도된 열이 다이캐스팅층(33)의 외주면을 통해 외부로 발산되는 것을 방지하는 구성으로서, 다이캐스팅층(33)의 외주면을 감싸는 단열재(51) 및 상기 단열재(51)의 외주면에 외피 형태로 부착되는 코팅층(53)으로 이루어진다.The heat insulating part 50 is a configuration that prevents heat conducted from the heating part 20 to the die-casting layer 33 to be radiated to the outside through the outer circumferential surface of the die-casting layer 33, and surrounds the outer circumferential surface of the die-casting layer 33 It consists of a heat insulating material 51 and a coating layer 53 attached to the outer circumferential surface of the heat insulating material 51 in the form of a shell.

상기 코팅층(53)은 각종 이물질이나 외기에 의해 단열재(51)의 단열 성능이 저하되는 것을 방지하는 역할을 하며, 이를 위해 주로 내열성과 내약품성을 갖는 테프론 코팅 유리섬유 소재가 사용된다. The coating layer 53 serves to prevent the thermal insulation performance of the insulating material 51 from being deteriorated by various foreign substances or outside air, and for this purpose, a Teflon-coated glass fiber material having heat resistance and chemical resistance is mainly used.

이상에서 본 발명의 바람직한 실시예를 설명하였으나, 본 발명의 권리범위는 이에 한정되지 아니하며 본 발명의 실시예와 실질적으로 균등한 범위에 있는 것까지 본 발명의 권리범위가 미치는 것으로 이해되어야 하며, 본 발명의 정신을 벗어나지 않는 범위 내에서 당해 발명이 속하는 기술분야에서 통상의 지식을 가진 자에 의해 다양한 변형 실시가 가능하다.Although the preferred embodiments of the present invention have been described above, the scope of the present invention is not limited thereto, and it is to be understood that the scope of the present invention extends to the scope substantially equal to the embodiment of the present invention. Various modifications may be made by those of ordinary skill in the technical field to which the present invention pertains within the scope not departing from the spirit of the invention.

10: 배관부
11: 파이프바디 13: 플랜지
20: 발열부
21: 케이싱 23: 열선
25: 절연층
30: 열전도부
31: 고정판 33: 다이캐스팅층
40: 제어부
41: 온도센서 43: 바이메탈
50: 단열부
51: 단열재 53: 코팅층10: piping
11: pipe body 13: flange
20: heating part
21: casing 23: heated wire
25: insulating layer
30: heat conduction unit
31: fixed plate 33: die casting layer
40: control unit
41: temperature sensor 43: bimetal
50: insulation
51: heat insulating material 53: coating layer

Claims (5)

원통형의 파이프바디(11)와 상기 파이프바디(11)의 길이방향 양단에 구비되는 플랜지(13)로 이루어지는 배관부(10);
스테인리스 재질의 케이싱(21), 상기 케이싱(21) 중심에 배치되는 열선(23)을 포함하는 발열부(20);
상기 케이싱(21)을 파이프바디(11)의 외주면에 고정하는 고정판(31)과 상기 파이프바디(11)의 외주면에 형성되는 다이캐스팅층(33)으로 이루어지는 열전도부(30); 및
온도센서(41), 바이메탈(43)과 콘트롤러로 이루어지는 제어부(40);
를 포함하여 이루어지며,
상기 다이캐스팅층(33)은 알루미늄 합금 재질로 이루어지고 내경은 파이프바디(11)의 외경과 동일하고 외경은 발열부(20)와 고정판(31)이 함께 매몰될 수 있는 크기로 구비되며,
상기 온도센서(41)와 바이메탈(43)은 상기 다이캐스팅층(33)에 형성된 수용홈(33a)에 구비되고, 상기 콘트롤러는 상기 온도센서(41), 바이메탈(43), 열선(23)과 전기적으로 연결되는 것을 특징으로 하는 반도체 제조설비용 히팅파이프.A pipe part 10 comprising a cylindrical pipe body 11 and flanges 13 provided at both ends of the pipe body 11 in the longitudinal direction;
A heating part 20 including a casing 21 made of stainless steel and a heating wire 23 disposed at the center of the casing 21;
A heat conduction part 30 comprising a fixing plate 31 fixing the casing 21 to the outer circumferential surface of the pipe body 11 and a die casting layer 33 formed on the outer circumferential surface of the pipe body 11; And
A temperature sensor 41, a control unit 40 consisting of a bimetal 43 and a controller;
It is made including,
The die casting layer 33 is made of an aluminum alloy material, the inner diameter is the same as the outer diameter of the pipe body 11, and the outer diameter is provided with a size such that the heating unit 20 and the fixing plate 31 can be buried together,
The temperature sensor 41 and the bimetal 43 are provided in the receiving groove 33a formed in the die casting layer 33, and the controller is electrically connected to the temperature sensor 41, the bimetal 43, and the heating wire 23 Heating pipe for semiconductor manufacturing equipment, characterized in that connected to. 제 1항에 있어서,
상기 케이싱(21)은 파이프바디(11)의 외주면에 나선형으로 감겨져 배치되고, 상기 고정판(31)은 파형 형상을 갖되 파형 간격이 상기 케이싱(21)의 나선 간격과 대응되도록 개시되어, 파형 골 부위마다 케이싱(21)이 걸림 고정되는 것을 특징으로 하는 반도체 제조설비용 히팅파이프.According to claim 1,
The casing 21 is spirally wound around the outer circumferential surface of the pipe body 11, and the fixing plate 31 has a wave shape, but the wave spacing is started to correspond to the spiral spacing of the casing 21. Heating pipe for semiconductor manufacturing equipment, characterized in that the casing (21) is fixed every time. 제 1항에 있어서,
상기 다이캐스팅층(33)의 재질인 알루미늄 합금은 총중량 100에 대해 규소가 7.5 ~ 13의 중량 비율로 첨가되는 알루미늄 합금인 것을 특징으로 하는 반도체 제조설비용 히팅파이프.According to claim 1,
Heating pipe for a semiconductor manufacturing facility, characterized in that the aluminum alloy, which is a material of the die casting layer (33), is an aluminum alloy in which silicon is added in a weight ratio of 7.5 to 13 with respect to the total weight of 100. 제 1항에 있어서,
상기 파이프바디(11)의 내벽에는 웰(11a)이 돌출 형성되고 상기 웰(11a)에 상기 온도센서(41)의 센서팁이 삽입 배치되는 것을 특징으로 하는 반도체 제조설비용 히팅파이프.According to claim 1,
A heating pipe for a semiconductor manufacturing facility, characterized in that a well (11a) is protruded from the inner wall of the pipe body (11), and a sensor tip of the temperature sensor (41) is inserted into the well (11a). 제 1항에 있어서,
상기 다이캐스팅층(33)의 외주면에는 단열부(50)가 더 구비되고, 상기 단열부(50)는 다이캐스팅층(33)의 외주면을 감싸는 단열재(51) 및 상기 단열재(51)의 외주면에 부착되는 코팅층(53)으로 이루어지며, 상기 코팅층(53)의 재질은 테프론 코팅 유리섬유인 것을 특징으로 하는 반도체 제조설비용 히팅파이프.
According to claim 1,
An insulating part 50 is further provided on the outer circumferential surface of the die casting layer 33, and the heat insulating part 50 is attached to the outer circumferential surface of the heat insulating material 51 and the heat insulating material 51 surrounding the outer circumferential surface of the die casting layer 33. A heating pipe for a semiconductor manufacturing facility consisting of a coating layer 53, wherein the material of the coating layer 53 is a Teflon-coated glass fiber.
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Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003287464A (en) * 2002-03-27 2003-10-10 Mitsubishi Heavy Ind Ltd Thermocouple well
KR100905289B1 (en) * 2008-12-10 2009-06-29 (주)화인 An apparatus for heating an exhaust pipe of semiconductor production process
KR101167484B1 (en) * 2011-12-14 2012-07-27 이삼해 Pipe heating cover fabrication method and a pipe heating cover fabricated by the method
KR20130118455A (en) * 2012-04-20 2013-10-30 김태우 An exhaust pipe for emitting a by-product gas of semiconductor process
KR20150024754A (en) * 2013-08-27 2015-03-09 (주)제이씨이노텍 Heating apparatus of vacuum pump for semiconductor equipment
KR101499582B1 (en) 2014-08-21 2015-03-09 (주) 한양티엠에스 Heating jacket to enhance heating efficiency
KR101820821B1 (en) * 2017-06-27 2018-01-22 (주)제이솔루션 Triple pipe heating device for exhaust gas heating in a semiconductor and lcd manufacturing process
KR101918492B1 (en) * 2017-12-05 2018-11-14 박영수 Heating jacket

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003287464A (en) * 2002-03-27 2003-10-10 Mitsubishi Heavy Ind Ltd Thermocouple well
KR100905289B1 (en) * 2008-12-10 2009-06-29 (주)화인 An apparatus for heating an exhaust pipe of semiconductor production process
KR101167484B1 (en) * 2011-12-14 2012-07-27 이삼해 Pipe heating cover fabrication method and a pipe heating cover fabricated by the method
KR20130118455A (en) * 2012-04-20 2013-10-30 김태우 An exhaust pipe for emitting a by-product gas of semiconductor process
KR20150024754A (en) * 2013-08-27 2015-03-09 (주)제이씨이노텍 Heating apparatus of vacuum pump for semiconductor equipment
KR101499582B1 (en) 2014-08-21 2015-03-09 (주) 한양티엠에스 Heating jacket to enhance heating efficiency
KR101820821B1 (en) * 2017-06-27 2018-01-22 (주)제이솔루션 Triple pipe heating device for exhaust gas heating in a semiconductor and lcd manufacturing process
KR101918492B1 (en) * 2017-12-05 2018-11-14 박영수 Heating jacket

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