KR102142398B1 - 멀티 하전 입자 빔 묘화 장치 - Google Patents

멀티 하전 입자 빔 묘화 장치 Download PDF

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Publication number
KR102142398B1
KR102142398B1 KR1020180121060A KR20180121060A KR102142398B1 KR 102142398 B1 KR102142398 B1 KR 102142398B1 KR 1020180121060 A KR1020180121060 A KR 1020180121060A KR 20180121060 A KR20180121060 A KR 20180121060A KR 102142398 B1 KR102142398 B1 KR 102142398B1
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South Korea
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openings
opening
aperture array
charged particle
particle beam
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KR1020180121060A
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English (en)
Korean (ko)
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KR20190046635A (ko
Inventor
히로후미 모리타
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가부시키가이샤 뉴플레어 테크놀로지
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/20—Masks or mask blanks for imaging by charged particle beam [CPB] radiation, e.g. by electron beam; Preparation thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/3002—Details
    • H01J37/3007—Electron or ion-optical systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70141—Illumination system adjustment, e.g. adjustments during exposure or alignment during assembly of illumination system
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/7025—Size or form of projection system aperture, e.g. aperture stops, diaphragms or pupil obscuration; Control thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70275—Multiple projection paths, e.g. array of projection systems, microlens projection systems or tandem projection systems
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/045—Beam blanking or chopping, i.e. arrangements for momentarily interrupting exposure to the discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H01J37/3177—Multi-beam, e.g. fly's eye, comb probe
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04—Means for controlling the discharge
    • H01J2237/043—Beam blanking
    • H01J2237/0435—Multi-aperture
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/10—Lenses
    • H01J2237/12—Lenses electrostatic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/10—Lenses
    • H01J2237/14—Lenses magnetic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
    • H01J2237/202—Movement
    • H01J2237/20221—Translation
    • H01J2237/20228—Mechanical X-Y scanning
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/303—Electron or ion optical systems
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Electron Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
KR1020180121060A 2017-10-25 2018-10-11 멀티 하전 입자 빔 묘화 장치 Active KR102142398B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2017206280A JP7073668B2 (ja) 2017-10-25 2017-10-25 マルチ荷電粒子ビーム描画装置
JPJP-P-2017-206280 2017-10-25

Publications (2)

Publication Number Publication Date
KR20190046635A KR20190046635A (ko) 2019-05-07
KR102142398B1 true KR102142398B1 (ko) 2020-08-07

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Country Link
US (1) US10811224B2 (enExample)
JP (1) JP7073668B2 (enExample)
KR (1) KR102142398B1 (enExample)
CN (1) CN109709771B (enExample)
TW (1) TWI709156B (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6289339B2 (ja) * 2014-10-28 2018-03-07 株式会社日立ハイテクノロジーズ 荷電粒子線装置及び情報処理装置
JP2020181902A (ja) 2019-04-25 2020-11-05 株式会社ニューフレアテクノロジー マルチ荷電粒子ビーム描画装置

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* Cited by examiner, † Cited by third party
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JP2013128031A (ja) * 2011-12-19 2013-06-27 Nuflare Technology Inc マルチ荷電粒子ビーム描画装置及びマルチ荷電粒子ビーム描画方法
JP2015024348A (ja) 2013-07-24 2015-02-05 住友大阪セメント株式会社 汚染残土の不溶化処理方法
JP2016134486A (ja) * 2015-01-19 2016-07-25 株式会社ニューフレアテクノロジー マルチ荷電粒子ビーム像の回転角測定方法、マルチ荷電粒子ビーム像の回転角調整方法、及びマルチ荷電粒子ビーム描画装置
JP2017117859A (ja) 2015-12-22 2017-06-29 株式会社ニューフレアテクノロジー マルチ荷電粒子ビーム装置
JP2017126674A (ja) 2016-01-14 2017-07-20 株式会社ニューフレアテクノロジー マルチ荷電粒子ビーム描画方法及びマルチ荷電粒子ビーム描画装置
JP2017139458A (ja) 2016-01-28 2017-08-10 大日本印刷株式会社 荷電粒子ビーム描画装置、荷電粒子ビーム描画システムおよび描画データ生成方法

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JP3929459B2 (ja) 2004-11-11 2007-06-13 株式会社日立ハイテクノロジーズ 荷電粒子線露光装置
WO2007067296A2 (en) * 2005-12-02 2007-06-14 Alis Corporation Ion sources, systems and methods
WO2007112465A1 (en) 2006-04-03 2007-10-11 Ims Nanofabrication Ag Particle-beam exposure apparatus with overall-modulation of a patterned beam
JP4843425B2 (ja) * 2006-09-06 2011-12-21 エルピーダメモリ株式会社 可変成形型電子ビーム描画装置
US8890094B2 (en) * 2008-02-26 2014-11-18 Mapper Lithography Ip B.V. Projection lens arrangement
JP5649389B2 (ja) * 2010-09-16 2015-01-07 キヤノン株式会社 荷電粒子線描画装置及びデバイス製造方法
US8586949B2 (en) * 2010-11-13 2013-11-19 Mapper Lithography Ip B.V. Charged particle lithography system with intermediate chamber
KR20120128106A (ko) * 2011-05-16 2012-11-26 캐논 가부시끼가이샤 묘화 장치 및 물품의 제조 방법
JP2013161733A (ja) 2012-02-07 2013-08-19 Canon Inc 遮蔽装置及び荷電粒子線露光装置
JP2015029023A (ja) * 2013-07-30 2015-02-12 キヤノン株式会社 描画装置、および、物品の製造方法
KR102197873B1 (ko) * 2013-08-29 2021-01-04 삼성전자주식회사 전자 빔을 이용하는 패턴 형성 방법 및 이를 수행하는 노광 시스템
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JP6616986B2 (ja) 2015-09-14 2019-12-04 株式会社ニューフレアテクノロジー マルチ荷電粒子ビーム描画方法及びマルチ荷電粒子ビーム描画装置
JP2017107959A (ja) * 2015-12-09 2017-06-15 株式会社ニューフレアテクノロジー マルチ荷電粒子ビーム装置及びマルチ荷電粒子ビーム像の形状調整方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013128031A (ja) * 2011-12-19 2013-06-27 Nuflare Technology Inc マルチ荷電粒子ビーム描画装置及びマルチ荷電粒子ビーム描画方法
JP2015024348A (ja) 2013-07-24 2015-02-05 住友大阪セメント株式会社 汚染残土の不溶化処理方法
JP2016134486A (ja) * 2015-01-19 2016-07-25 株式会社ニューフレアテクノロジー マルチ荷電粒子ビーム像の回転角測定方法、マルチ荷電粒子ビーム像の回転角調整方法、及びマルチ荷電粒子ビーム描画装置
JP2017117859A (ja) 2015-12-22 2017-06-29 株式会社ニューフレアテクノロジー マルチ荷電粒子ビーム装置
JP2017126674A (ja) 2016-01-14 2017-07-20 株式会社ニューフレアテクノロジー マルチ荷電粒子ビーム描画方法及びマルチ荷電粒子ビーム描画装置
JP2017139458A (ja) 2016-01-28 2017-08-10 大日本印刷株式会社 荷電粒子ビーム描画装置、荷電粒子ビーム描画システムおよび描画データ生成方法

Also Published As

Publication number Publication date
JP7073668B2 (ja) 2022-05-24
TWI709156B (zh) 2020-11-01
TW201931422A (zh) 2019-08-01
JP2019079953A (ja) 2019-05-23
KR20190046635A (ko) 2019-05-07
US10811224B2 (en) 2020-10-20
CN109709771A (zh) 2019-05-03
US20190122856A1 (en) 2019-04-25
CN109709771B (zh) 2021-03-12

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