KR102119290B1 - 부정확도를 감소시키고 콘트라스트를 유지하는 충전 요소를 갖는 계측 타겟 - Google Patents

부정확도를 감소시키고 콘트라스트를 유지하는 충전 요소를 갖는 계측 타겟 Download PDF

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KR102119290B1
KR102119290B1 KR1020157001965A KR20157001965A KR102119290B1 KR 102119290 B1 KR102119290 B1 KR 102119290B1 KR 1020157001965 A KR1020157001965 A KR 1020157001965A KR 20157001965 A KR20157001965 A KR 20157001965A KR 102119290 B1 KR102119290 B1 KR 102119290B1
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target
contrast
metrology
inaccuracy
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Korean (ko)
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KR20160118916A (ko
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누리엘 아미르
라비브 요하난
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케이엘에이 코포레이션
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70681—Metrology strategies
    • G03F7/70683—Mark designs
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70608—Monitoring the unpatterned workpiece, e.g. measuring thickness, reflectivity or effects of immersion liquid on resist
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
    • H01L22/30—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/27—Structural arrangements therefor

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
KR1020157001965A 2014-02-12 2014-09-09 부정확도를 감소시키고 콘트라스트를 유지하는 충전 요소를 갖는 계측 타겟 Active KR102119290B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201461939129P 2014-02-12 2014-02-12
US61/939,129 2014-02-12
PCT/US2014/054811 WO2015122932A1 (en) 2014-02-12 2014-09-09 Metrology targets with filling elements that reduce inaccuracies and maintain contrast

Publications (2)

Publication Number Publication Date
KR20160118916A KR20160118916A (ko) 2016-10-12
KR102119290B1 true KR102119290B1 (ko) 2020-06-05

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KR1020157001965A Active KR102119290B1 (ko) 2014-02-12 2014-09-09 부정확도를 감소시키고 콘트라스트를 유지하는 충전 요소를 갖는 계측 타겟

Country Status (4)

Country Link
JP (1) JP6635926B2 (https=)
KR (1) KR102119290B1 (https=)
CN (1) CN104835754B (https=)
WO (1) WO2015122932A1 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116936393B (zh) * 2016-02-24 2024-12-20 科磊股份有限公司 光学计量的准确度提升
US10303839B2 (en) * 2016-06-07 2019-05-28 Kla-Tencor Corporation Electrically relevant placement of metrology targets using design analysis
WO2018226215A1 (en) * 2017-06-06 2018-12-13 Kla-Tencor Corporation Reticle optimization algorithms and optimal target design
US11512948B2 (en) * 2020-05-26 2022-11-29 Kla Corporation Imaging system for buried metrology targets

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030223630A1 (en) * 2002-02-15 2003-12-04 Kla-Tencor Corporation Overlay metrology and control method
US20130330904A1 (en) * 2010-05-21 2013-12-12 Taiwan Semiconductor Manufacturing Company Ltd. Overlay mark assistant feature

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6037671A (en) * 1998-11-03 2000-03-14 Advanced Micro Devices, Inc. Stepper alignment mark structure for maintaining alignment integrity
US7687925B2 (en) * 2005-09-07 2010-03-30 Infineon Technologies Ag Alignment marks for polarized light lithography and method for use thereof
KR100871801B1 (ko) * 2005-12-28 2008-12-02 동부일렉트로닉스 주식회사 반도체 소자의 얼라인먼트 키 및 그 형성 방법
US8732625B2 (en) * 2007-06-04 2014-05-20 Asml Netherlands B.V. Methods for performing model-based lithography guided layout design
KR20100079145A (ko) * 2008-12-30 2010-07-08 주식회사 동부하이텍 오버레이 마크의 디싱 방지를 위한 더미 패턴
JP2012033923A (ja) * 2010-07-29 2012-02-16 Nikon Corp 露光方法及び露光装置、並びにデバイス製造方法
US9927718B2 (en) * 2010-08-03 2018-03-27 Kla-Tencor Corporation Multi-layer overlay metrology target and complimentary overlay metrology measurement systems
KR20120025765A (ko) * 2010-09-08 2012-03-16 주식회사 하이닉스반도체 반도체 소자의 오버레이 버니어
JP2013120872A (ja) * 2011-12-08 2013-06-17 Toshiba Corp 重ね合わせ計測方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030223630A1 (en) * 2002-02-15 2003-12-04 Kla-Tencor Corporation Overlay metrology and control method
US20130330904A1 (en) * 2010-05-21 2013-12-12 Taiwan Semiconductor Manufacturing Company Ltd. Overlay mark assistant feature

Also Published As

Publication number Publication date
KR20160118916A (ko) 2016-10-12
WO2015122932A1 (en) 2015-08-20
CN104835754A (zh) 2015-08-12
JP6635926B2 (ja) 2020-01-29
JP2017508145A (ja) 2017-03-23
CN104835754B (zh) 2019-08-02

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