KR102118133B1 - 레이저 처리 장치 및 방법 - Google Patents
레이저 처리 장치 및 방법 Download PDFInfo
- Publication number
- KR102118133B1 KR102118133B1 KR1020180000330A KR20180000330A KR102118133B1 KR 102118133 B1 KR102118133 B1 KR 102118133B1 KR 1020180000330 A KR1020180000330 A KR 1020180000330A KR 20180000330 A KR20180000330 A KR 20180000330A KR 102118133 B1 KR102118133 B1 KR 102118133B1
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- KR
- South Korea
- Prior art keywords
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Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
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- H01L51/56—
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67288—Monitoring of warpage, curvature, damage, defects or the like
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
- H01L22/24—Optical enhancement of defects or not directly visible states, e.g. selective electrolytic deposition, bubbles in liquids, light emission, colour change
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
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- H01L51/0027—
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/40—Thermal treatment, e.g. annealing in the presence of a solvent vapour
- H10K71/421—Thermal treatment, e.g. annealing in the presence of a solvent vapour using coherent electromagnetic radiation, e.g. laser annealing
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Recrystallisation Techniques (AREA)
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020180000330A KR102118133B1 (ko) | 2018-01-02 | 2018-01-02 | 레이저 처리 장치 및 방법 |
TW107144413A TW201937778A (zh) | 2018-01-02 | 2018-12-11 | 雷射處理裝置及雷射處理方法 |
CN201811609820.5A CN109994395A (zh) | 2018-01-02 | 2018-12-27 | 激光处理设备及激光处理方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020180000330A KR102118133B1 (ko) | 2018-01-02 | 2018-01-02 | 레이저 처리 장치 및 방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20190082568A KR20190082568A (ko) | 2019-07-10 |
KR102118133B1 true KR102118133B1 (ko) | 2020-06-03 |
Family
ID=67129566
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020180000330A KR102118133B1 (ko) | 2018-01-02 | 2018-01-02 | 레이저 처리 장치 및 방법 |
Country Status (3)
Country | Link |
---|---|
KR (1) | KR102118133B1 (zh) |
CN (1) | CN109994395A (zh) |
TW (1) | TW201937778A (zh) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110277327B (zh) * | 2019-07-22 | 2024-03-22 | 深圳市艾特自动化有限公司 | 一种在线式石墨舟中硅片的检测系统及检测方法 |
CN113182957A (zh) * | 2021-05-13 | 2021-07-30 | 安徽力幕新材料科技有限公司 | 一种覆膜铝箔生产加工的废料收集装置及废料再处理方法 |
US20240038557A1 (en) * | 2022-07-28 | 2024-02-01 | Applied Materials, Inc. | Methods and apparatus for processing a substrate |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000021941A (ja) * | 1998-07-06 | 2000-01-21 | Toshiba Corp | ウェーハストレス測定装置及びウェーハ状態測定装置 |
JP2016025242A (ja) * | 2014-07-22 | 2016-02-08 | 住友電気工業株式会社 | 半導体ウエハの反り測定装置 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3346214B2 (ja) * | 1997-03-26 | 2002-11-18 | セイコーエプソン株式会社 | 結晶性半導体膜の製造方法、およびアニール装置および薄膜トランジスタの製造方法および液晶表示装置用アクティブマトリクス基板 |
KR101164524B1 (ko) | 2009-12-21 | 2012-07-10 | 에이피시스템 주식회사 | 레이저 빔의 라인 길이 조절이 가능한 레이저 가공 장치 |
KR101777688B1 (ko) | 2013-10-21 | 2017-09-27 | 에이피시스템 주식회사 | 가스 분사 유닛 및 이를 포함하는 열처리 장치 |
JP6272743B2 (ja) * | 2014-09-24 | 2018-01-31 | 株式会社ニューフレアテクノロジー | 基板処理装置 |
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2018
- 2018-01-02 KR KR1020180000330A patent/KR102118133B1/ko active IP Right Grant
- 2018-12-11 TW TW107144413A patent/TW201937778A/zh unknown
- 2018-12-27 CN CN201811609820.5A patent/CN109994395A/zh active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000021941A (ja) * | 1998-07-06 | 2000-01-21 | Toshiba Corp | ウェーハストレス測定装置及びウェーハ状態測定装置 |
JP2016025242A (ja) * | 2014-07-22 | 2016-02-08 | 住友電気工業株式会社 | 半導体ウエハの反り測定装置 |
Also Published As
Publication number | Publication date |
---|---|
TW201937778A (zh) | 2019-09-16 |
KR20190082568A (ko) | 2019-07-10 |
CN109994395A (zh) | 2019-07-09 |
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