KR102098323B1 - Light emitting device - Google Patents

Abstract

Embodiments relate to a light emitting device, a method of manufacturing the light emitting device, a light emitting device package, and a lighting system.
The light emitting device according to the embodiment may include a first conductive semiconductor layer; An active layer on the first conductive semiconductor layer; A second conductive type semiconductor layer on the active layer; A plurality of protrusions formed of a semiconductor on the second conductive semiconductor layer; A conductive nano structure in a region between a plurality of protrusions on an upper surface of the second conductive semiconductor layer; A conductive first low refractive layer on the plurality of protrusions and the nanostructures; And a reflective layer disposed on the first low refractive layer.

Description

Light emitting device {LIGHT EMITTING DEVICE}

Embodiments relate to a light emitting device, a method of manufacturing the light emitting device, a light emitting device package, and a lighting system.

Reflectors used in light emitting devices such as LEDs should have good reflectivity as well as high reflectivity. As a conventional single metal reflector, a high-reflection metal electrode such as Ag or Al has been used, but such a metal reflector cannot obtain reflectivity above a certain limit due to the extinction coefficient of the metal itself. In order to overcome this limitation of metal reflectivity, an omni-directional reflector (ODR) has been proposed. The structure of this reflector has a structure in which a low refractive layer and a metal layer such as Ag or Al are sequentially stacked on a semiconductor material layer. Since the material of the low refractive layer is a non-conductor, it has a drawback that it cannot be made into an active element that injects current.

Accordingly, it is necessary to secure a light emitting device that provides a reliable and high reflectivity by providing a reflector structure having a low refractive layer having improved electrical properties and high transparency with a semiconductor material layer.

The embodiment provides a light emitting device for improving the contact resistance with the semiconductor layer.

The embodiment provides a light emitting device having a stacked structure of a conductive nanostructure and a conductive low refractive layer between protrusions of a semiconductor layer.

An embodiment provides a light emitting device including a reflector structure having a stacked structure of a conductive nanostructure, a conductive low refractive layer, and a reflective layer on a semiconductor layer.

The embodiment provides a light emitting device having a metal oxide layer on the top surface of the conductive nanostructure or below the reflective layer.

The embodiment provides a light emitting device with improved electrical properties through an increase in the contact area between the semiconductor layer and the conductive low refractive layer.

In addition, the embodiment is to provide a light emitting device with improved electrical reliability, a method of manufacturing the light emitting device, a light emitting device package and a lighting system.

The light emitting device according to the embodiment may include a first conductive semiconductor layer; An active layer on the first conductive semiconductor layer; A second conductive type semiconductor layer on the active layer; A plurality of protrusions formed of a semiconductor on the second conductive semiconductor layer; A conductive nano structure in a region between a plurality of protrusions on an upper surface of the second conductive semiconductor layer; A conductive first low refractive layer on the plurality of protrusions and the nanostructures; And a reflective layer disposed on the first low refractive layer.

The light emitting device according to the embodiment includes a first conductive semiconductor layer; An active layer on the first conductive semiconductor layer; A second conductive type semiconductor layer on the active layer; A plurality of protrusions protruding from the upper surface of the second conductive type semiconductor layer; A conductive first low-refractive layer over the second conductive semiconductor layer and the plurality of protrusions; A conductive nanostructure disposed in a concave region on the top surface of the first low refractive layer; A conductive second low refractive layer disposed on the first low refractive layer; And a reflective layer disposed on the second low refractive layer.

The embodiment can improve the contact area with the conductive low refractive layer by the rough projection of the semiconductor layer.

The embodiment may improve the forward voltage characteristic between the rough surface of the semiconductor layer and the conductive low refractive layer.

The embodiment may improve the light extraction efficiency by the rough surface of the semiconductor layer, the conductive nanostructure, and the conductive low refractive layer.

In addition, embodiments may provide a light emitting device with improved electrical and optical reliability, a method of manufacturing the light emitting device, a light emitting device package, and a lighting system.

1 is a side sectional view showing a light emitting device according to a first embodiment.
2 is a side cross-sectional view showing a light emitting device according to a second embodiment.
3 is a side cross-sectional view showing a light emitting device according to a third embodiment.
4 is a side cross-sectional view showing a light emitting device according to a fourth embodiment.
5 is a side cross-sectional view showing a light emitting device according to a fifth embodiment.
6 is a first modified example of the light emitting device of FIG. 1.
7 is a second modified example of the light emitting device of FIG. 1.
8 is a third modification example of the light emitting device of FIG. 1.
9 is a fourth modified example of the light emitting device of FIG. 1.
10 is a view showing a light emitting device package having the light emitting device of FIG. 7.
11 is a perspective view illustrating an example of a display device having a light emitting device or a light emitting device package according to an embodiment.
12 is a side cross-sectional view showing another example of a display device having a light emitting device or a light emitting device package according to an embodiment.
13 is a perspective view of a lighting unit having a light emitting device or a light emitting device package according to an embodiment.

In the description of the embodiment, each layer (film), region, pattern or structure may be "on / over" or "under / under" the substrate, each layer (film), region, pad or pattern. ) "," On / over "and" under "are formed" directly "or" indirectly "through another layer. It includes everything that is. In addition, the criteria for the top / top or bottom / bottom of each layer will be described based on the drawings.

In the drawings, the thickness or size of each layer is exaggerated, omitted, or schematically illustrated for convenience and clarity. Also, the size of each component does not entirely reflect the actual size.

<Light emitting element>

1 is a side cross-sectional view showing a light emitting device according to a first embodiment.

Referring to FIG. 1, the light emitting device includes a first conductivity type semiconductor layer 117, an active layer 119 on the first conductivity type semiconductor layer 117, and an electron blocking layer 121 on the active layer 119. ), Between the plurality of protrusions 31 and the plurality of protrusions 31 on the second conductive type semiconductor layer 123 on the electron blocking layer 121 and the second conductive type semiconductor layer 123. A plurality of nano-structures 131 in the concave portion 32, the plurality of protrusions 31 and the low-refractive layer 141 formed on the nano-structure 131, formed on the low-refractive layer 141 The reflective layer 151 may be included.

In an embodiment, the light emitting structure 110 includes the first conductive type semiconductor layer 117, the active layer 119, the electron blocking layer 121, and the second conductive type semiconductor layer 123, and the first Another layer may be further disposed in a region between the conductive semiconductor layer 117 and the active layer 119 or / and the region between the electron blocking layer 121 and the second conductive semiconductor layer 123. In addition, the light emitting structure 110 may include a protrusion 31 made of a semiconductor.

The first conductive semiconductor layer 117 may be implemented as at least one of a group III-V and II-VI compound semiconductor doped with a first conductive dopant. The first conductive semiconductor layer 117 is, for example, a semiconductor having a composition formula of In _x Al _y Ga _{1 -x- y} N (0≤x≤1, 0≤y≤1, 0≤x + y≤1) It can be formed of a material. When the first conductive type semiconductor layer 117 is an n-type semiconductor layer, the first conductive type dopant is an n-type dopant, and includes Si, Ge, Sn, Se, and Te. The first conductivity type semiconductor layer 117 includes at least one of compound semiconductors such as GaN, InN, AlN, InGaN, AlGaN, InAlGaN, and AlInN.

The active layer 119 is disposed on the first conductive semiconductor layer 117, a single well, a single quantum well layer, multiple wells, a multi quantum well structure (MQW: Multi Quantum Well), quantum wire (Quantum-Wire ) Structure, or a quantum dot (Quantum Dot) structure.

In the active layer 119, a quantum well layer and a quantum barrier layer are alternately arranged, and a pair of the quantum well layer and the quantum barrier layer may be formed in 2 to 30 cycles. The quantum well layer may be formed of, for example, a semiconductor material having a composition formula of In _x Al _y Ga _{1 -x- y} N (0≤x≤1, 0≤y≤1, 0≤x + y≤1). . The quantum barrier layer is a semiconductor layer having a band gap wider than that of the quantum well layer, for example, In _x Al _y Ga _{1 -x- y} N (0≤x≤1, 0≤y≤1, 0≤x It may be formed of a semiconductor material having a composition formula of + y≤1). The pair of the quantum well layer and the quantum barrier layer includes, for example, at least one of InGaN / GaN, InGaN / InGaN, GaN / AlGaN, InAlGaN / InAlGaN, and InAlGaN / AlGaN.

The active layer 119 may generate at least one peak wavelength that is selectively within a wavelength range of an ultraviolet band to a visible light band, but is not limited thereto.

The electron blocking layer 121 is disposed on the active layer 119 and may be formed of a material having a band gap wider than the band gap of the active layer 119, for example, an AlGaN-based semiconductor layer. In addition, the electron blocking layer 121 may be formed of an AlGaN-based semiconductor having a multi-layer structure having a different composition of aluminum. The electron blocking layer 121 may include a dopant of the second conductivity type, and the dopant of the second conductivity type may be a p-type dopant. Accordingly, the electron blocking layer 121 may be a p-type semiconductor layer.

The second conductivity type semiconductor layer 123 is disposed on the electron blocking layer 121 and may be formed of a semiconductor compound. For example, the semiconductor compound may be implemented as at least one of a group III-V group and a group II-VI compound semiconductor, and a second conductivity type dopant may be doped. For example, the second conductivity-type semiconductor layer 123 has a composition formula of In _x Al _y Ga _{1 -x- y} N (0≤x≤1, 0≤y≤1, 0≤x + y≤1). It may include a semiconductor material. When the second conductivity type semiconductor layer 123 is a p-type semiconductor layer, the second conductivity type dopant is a p-type dopant, and may include Mg, Zn, Ca, Sr, Ba, or the like. The second conductive semiconductor layer 123 may be formed thicker than the thickness of the electron blocking layer 121, for example, may be formed in a range of 70 to 80 nm.

In an embodiment, the first conductivity type semiconductor layer 117 may be implemented as an n type semiconductor layer, and the second conductivity type semiconductor layer 123 may be implemented as a p type semiconductor layer, but is not limited thereto. In addition, a semiconductor having an opposite polarity to the second conductivity type, for example, an n-type semiconductor layer (not shown) may be formed on the second conductivity type semiconductor layer 123. Accordingly, the light emitting structure 110 may be implemented as any one of an np junction structure, a pn junction structure, an npn junction structure, and a pnp junction structure. An embodiment is to provide a light emitting device having the above-described light emitting structure, a method of manufacturing the light emitting device, a light emitting device package and a lighting system.

The upper surface of the second conductive type semiconductor layer 123 is formed with a rough surface, for example, a plurality of protrusions 31 protruding from the upper surface of the second conductive type semiconductor layer 123, and the plurality of protrusions 31 May protrude from the upper surface of the second conductive semiconductor layer 123, or may be formed of a separate semiconductor material.

The plurality of protrusions 31 may be formed of the same compound semiconductor as the second conductive semiconductor layer 123 or a different semiconductor, and include, for example, at least one of GaN, InN, AlN, InGaN, AlGaN, InAlGaN, and AlInN. do. After the growth of the second conductive semiconductor layer 123, the plurality of protrusions 31 may be grown in a three-dimensional growth mode, at which time the growth rate and thickness can be controlled. In addition, the plurality of protrusions 31 may include a p-type dopant, and the concentration of the p-type dopant may be the same or higher than the concentration of the p-type dopant added to the second conductive semiconductor layer 123. Since the plurality of protrusions 31 are formed of a conductive semiconductor, they may be electrically connected to the conductive low refractive layer 141. The plurality of protrusions 31 may be formed of an undoped semiconductor in which a p-type dopant is not doped, but is not limited thereto.

The side cross-section of each protrusion 31 has a wide lower portion and a narrow upper portion, for example, may be formed in a polygonal or polygonal pyramid shape, but is not limited thereto. The protrusions 31 may be formed to a thickness of 10 nm or less, for example, 1 nm to 5 nm, and the same thickness or at least one protrusion may be formed to different thicknesses. The plurality of protrusions 31 are spaced apart from each other, and may be arranged at irregular or regular intervals when viewed from above.

The plurality of nanostructures 131 are disposed in the concave portion 32 between the plurality of protrusions 31 and are spaced apart from each other on the upper surface of the second conductive semiconductor layer 123. The nanostructure 131 is disposed in the concave portion 32 between the adjacent protrusions 31 and may be in contact with a side surface of the adjacent protrusions 31 and an upper surface of the second conductive semiconductor layer 123. . Here, the nanostructure 131 may be defined as having a width or / and height of a nano size, for example, 900 nm or less.

The nanostructure 131 may be formed of a conductive material, for example, a metal material. The nanostructure 131 may be formed of, for example, silver (Ag) or an alloy having silver, but is not limited thereto. The nanostructure 131 may be formed in a dot shape, for example, a surface having a curved surface. After the growth of the protrusion 31, the nanostructure 131 performs annealing of a metal film, for example, an Ag film at a temperature in the range of 500 degrees to 100 degrees, wherein the Ag film is dispersed by the annealing (migration). ) And can be formed by agglomeration.

The nanostructure 131 may have a width narrower than the spacing between adjacent protrusions 31, or may be formed in a range of 500 nm or less, for example, 1 to 500 nm. The height of the nano-structure 131 may be formed lower than the thickness of the projection 31, for example, may be formed in a range of 1 ~ 90nm.

The low refractive layer 141 is formed on the surfaces of the nanostructures 131 and the protrusions 31 and may be formed with a refractive index lower than that of the compound semiconductor of the light emitting structure 110. The low refractive layer 141 may be formed of a conductive material, and the conductive material is a non-metal, and includes at least one of metal oxide, metal nitride, and metal oxynitride. The low refractive layer 141 may be defined as a transparent conductive layer, In, Sn, Zn, Cd, Ga, Al, Mg, Ti, Mo, Ni, Cu, Ag, Au, Sb, Pt, Rh, Ir , Ru, Pd, and at least one of the elements is at least one of O and N and at least one of the materials. The metal oxide is any one of ITO, ZnO, AZO, IZO, ATO, ZITO, Sn-O, In-O, Ga-O, and the metal nitride is at least one of TiN, CrN, TaN, and In-N , The metal oxynitride ITON, ZnON, O-In-N, at least one of IZON.

The low refractive layer 141 may be formed to have a thickness thinner than that of the reflective layer 151, for example, a thickness in the range of 1-10 nm. When the thickness of the low-refractive-index layer 141 exceeds the above range, light loss occurs, and if it is smaller than the above range, electrical characteristics may deteriorate.

The low-refractive layer 141 may be formed of a concavo-convex layer by the protrusion 31 and the nanostructure 131, wherein the concavo-convex layer is formed of a concavo-convex surface, or a lower surface and an upper surface of the concavo-convex surface Can be defined as a layer.

The conductive low-refractive layer 141 may be in contact with a portion of the top and side surfaces of the plurality of protrusions 31, so that the low-refraction layer 141 and the plurality of protrusions 31 may be electrically connected. For example, the low refractive layer 141 may be ohmic-contacted in contact with the plurality of protrusions 31. The nanostructure 131 may be ohmic-contacted in contact with the second conductive semiconductor layer 123 and the protrusion 31. That is, the nanostructure 131 and the low refractive layer 141 may have different contact resistances from the second conductive semiconductor layer 123 and the protrusion 31 and may be connected by ohmic contact. Accordingly, forward voltage characteristics in a region between the second conductive semiconductor layer 123 and the low refractive index layer 141 may be improved.

Since the thickness of the nanostructure 131 is less than 100 nm, for example, 90 nm or less, the light transmittance becomes 70% or more. Accordingly, light emitted from the active layer 119 is transmitted or refracted through the nanostructure 131 and the low refractive layer 141. Here, the nano-structure 131 and the projection 31 can change the critical angle of the incident light, thereby improving the extraction efficiency of light.

A reflective layer 151 is disposed on the low refractive layer 141, and the reflective layer 151 may be formed of metal, such as Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Au, Hf, and combinations thereof. The reflective layer 151 may be formed of a metal having a light reflectance of 70% or more. The nanostructure 131 and the reflective layer 151 may include the same metal, for example, Ag.

In the embodiment, the contact area between the protrusion 31 of the second conductive semiconductor layer 123 and the low refractive layer 141 is increased, and the conductive nanostructure 131 and the second conductive semiconductor layer 123 are also increased. The contact area with the surface of is increased. Accordingly, since the contact area between the low-refractive-layer 141 and the nano-structure 131 is increased between the semiconductor layer and the surfaces of the protrusions 31, electrical characteristics may be improved. That is, it is possible to prevent the forward voltage characteristic supplied to the light emitting element from being increased.

2 is a side cross-sectional view showing a light emitting device according to a second embodiment. In describing FIG. 2, the same parts as the first embodiment will be described with reference to the first embodiment.

Referring to FIG. 2, the light emitting device includes a first conductivity type semiconductor layer 117, an active layer 119 on the first conductivity type semiconductor layer 117, and an electron blocking layer 121 on the active layer 119. ), A second conductive type semiconductor layer 123 on the electron blocking layer 121, a plurality of protrusions 33 on the second conductive type semiconductor layer 123, and the second conductive type semiconductor layer (123) a first low refractive layer 142, a plurality of nanostructures 132 on the first low refractive layer 142, the plurality of nanostructures 132, and the first low refractive layer ( A second low refractive layer 143 on the 142, and a reflective layer 151 on the second low refractive layer (143).

The plurality of protrusions 33 protrude more than the upper surface of the second conductive semiconductor layer 123. The plurality of protrusions 33 may be formed of the same semiconductor as the second conductive type semiconductor layer 123 or a different semiconductor, and include, for example, at least one of GaN, InN, AlN, InGaN, AlGaN, InAlGaN, and AlInN. . The plurality of protrusions 33 may include a p-type dopant, and the concentration of the p-type dopant may be the same or higher than the concentration of the p-type dopant added to the second conductive semiconductor layer 123. Since the plurality of protrusions 33 are formed of a conductive semiconductor, they may be electrically connected to the conductive first low refractive layer 142. The plurality of protrusions 33 may be formed of an undoped semiconductor.

The side cross-section of each protrusion 33 has a wide lower portion and a narrow upper portion, for example, may be formed in a polygonal or polygonal pyramid shape, but is not limited thereto. The protrusions 33 may be formed to a thickness of 10 nm or less, for example, 1 nm to 5 nm, and the same thickness or at least one protrusion may be formed to different thicknesses. The plurality of protrusions 33 are spaced apart from each other, and may be arranged at irregular or regular intervals when viewed from above.

The region between the plurality of protrusions 33 is formed by a concave portion 34, and a first low refractive layer 142 is disposed on the plurality of protrusions 33 and the concave portion 34. The nanostructure 132 is disposed on the first low refractive layer 142, and the second low refractive layer 143 is disposed on the nanostructure 132.

A nanostructure (not shown) having a metal, eg, silver (Ag) material, may be disposed in the concave portion 34, and the upper surface of the second conductive semiconductor layer 123 may be disposed by the nanostructure (not shown). The electrical contact resistance of can be improved.

The first low refractive layer 142 and the second low refractive layer 143 may have a refractive index lower than that of the compound semiconductor and may be formed of a conductive material. The conductive material is a non-metal, and includes at least one of metal oxide, metal nitride, and metal oxynitride. The first and second low refractive layers 142 and 143 may be defined as transparent conductive layers, In, Sn, Zn, Cd, Ga, Al, Mg, Ti, Mo, Ni, Cu, Ag, Au, Sb, At least one material of Pt, Rh, Ir, Ru, and Pd includes at least one of materials combined with at least one of O and N. The metal oxide is any one of ITO, ZnO, AZO, IZO, ATO, ZITO, Sn-O, In-O, Ga-O, and the metal nitride is at least one of TiN, CrN, TaN, and In-N , The metal oxynitride ITON, ZnON, O-In-N, at least one of IZON. The first and second low refractive layers 142 and 143 may be formed of the same material or different materials.

Each of the first and second low-refractive layers 142 and 143 may be formed to have a thickness thinner than that of the reflective layer 151, for example, a thickness in a range of 1-10 nm. The first low refractive layer 142 may be formed of an uneven layer, but is not limited thereto.

The plurality of nanostructures 132 are disposed in a concave region 22 on the top surface of the first low refractive layer 142, and may be disposed spaced apart from each other.

The nanostructure 132 may be formed of a conductive material, for example, a metal material. The nanostructure 132 may be formed of, for example, silver (Ag) or an alloy having silver, but is not limited thereto. The nanostructure 132 may be formed in a dot shape, for example, a surface having a curved surface. The height of the nanostructure 132 may be formed lower than the thickness of the projection 33, for example, may be formed in a range of 1 to 90nm.

Since the thickness of the nanostructure 132 is less than 100 nm, for example, 90 nm or less, the light transmittance becomes 70% or more. Accordingly, light emitted from the active layer 119 is transmitted or refracted through the first and second low refractive layers 142 and 143 and the nanostructure 132. Here, the nano-structure 132 and the projection 33 can change the critical angle of the incident light, thereby improving the extraction efficiency of light.

A reflective layer 151 is disposed on the second low refractive layer 143, and the reflective layer 151 may be formed of metal. The reflective layer 151 may be formed of a metal having a light reflectance of 70% or more, for example, a metal including at least one of silver (Ag), aluminum (Al), copper (Cu), or nickel (Ni). The nanostructure 132 and the reflective layer 151 may include the same metal, for example, Ag.

In an embodiment, by improving the contact area by the protrusions 33 of the semiconductor, electrical characteristics may be improved, and light or reflections proceeding to the reflective layer 151 by the protrusions 33 and the nanostructures 132 may be reflected. The critical angle of light can be changed.

3 is a side cross-sectional view showing a light emitting device according to a third embodiment. In describing the third embodiment, the same configuration as the first embodiment will be referred to the first embodiment.

Referring to FIG. 3, the light emitting device includes a first conductivity type semiconductor layer 117, an active layer 119 on the first conductivity type semiconductor layer 117, and an electron blocking layer 121 on the active layer 119. ), A second conductive type semiconductor layer 123 on the electron blocking layer 121, a plurality of protrusions 31 and the plurality of protrusions 31 on the second conductive type semiconductor layer 123. In the region between the nanostructure 131, the metal oxide layer 133 on the nanostructure 131, the projection 31 and the low refractive index layer 145 on the metal oxide layer 133, A reflective layer 151 is included on the low refractive layer 145.

The plurality of protrusions 31 protrude from the upper surface of the second conductive semiconductor layer 123, and may be formed of the same semiconductor as the second conductive semiconductor layer 123 or a different semiconductor. The plurality of protrusions 31 may include a p-type dopant, and the concentration of the p-type dopant may be the same or higher than the concentration of the p-type dopant added to the second conductive semiconductor layer 123. Since the plurality of protrusions 31 are formed of a conductive semiconductor, they may be electrically connected to the conductive low refractive layer 145. The plurality of protrusions 31 may be formed of an undoped semiconductor in which a p-type dopant is not doped, but is not limited thereto.

The side cross-section of each protrusion 31 has a wide lower portion and a narrow upper portion, for example, may be formed in a polygonal or polygonal pyramid shape, but is not limited thereto. The protrusions 31 may be formed to a thickness of 10 nm or less, for example, 1 nm to 5 nm, and the same thickness or at least one protrusion may be formed to different thicknesses.

The nanostructure 131 may be formed of a conductive material, for example, a metal material. The nanostructure 131 may be formed of, for example, silver (Ag) or an alloy having silver, but is not limited thereto. The nanostructure 131 may have a width narrower than the spacing between adjacent protrusions 31, or may be formed in a range of 500 nm or less, for example, 1 to 500 nm. The height of the nano-structure 131 may be formed lower than the thickness of the projection 31, for example, may be formed in a range of 1 ~ 90nm.

The metal oxide layer 133 may cover the surface of the nanostructure 131, and may be formed of a combination of a material of the nanostructure 131 and at least one material constituting the low refractive layer 145. The metal oxide layer 133 may be formed of Ag ₂ O, for example. The upper surface of the metal oxide layer 133 may be formed as a curved surface along the surface of the nanostructure 131, but is not limited thereto.

The low refractive layer 145 is formed on the metal oxide layer 133 and the plurality of protrusions 31, and may be formed of a conductive material. The conductive material may be formed of at least one of metal oxide, metal nitride, and metal oxynitride. The low refractive layer 145 may be formed to have a thickness thinner than that of the reflective layer 151, for example, a thickness in a range of 1-10 nm.

The reflective layer 151 is formed on the low refractive layer 145. In an embodiment, a plurality of protrusions 31 and a conductive nanostructure 131 are disposed on the second conductive semiconductor layer 123 in a concave portion 32 between the plurality of protrusions 31, and the plurality of Conductive low refractive layer 145 is in contact with the protrusion 31 and the conductive nano-structure 131. Accordingly, the second conductive semiconductor layer 123 and the protrusion 31 may have an increased contact area at the interface between the nanostructure 131 and the low refractive layer 145. The nanostructure 131 and the low refractive layer 145 may have ohmic contact with a difference in contact resistance between the second conductive semiconductor layer 123 and the ohmic contact. Accordingly, it is possible to prevent the forward voltage characteristic of the light emitting device from being increased.

4 is a side cross-sectional view showing a light emitting device according to a fourth embodiment. In describing the fourth embodiment, the same configuration as the first embodiment will be referred to the first embodiment.

Referring to FIG. 4, the light emitting device includes a first conductivity type semiconductor layer 117, an active layer 119 on the first conductivity type semiconductor layer 117, and an electron blocking layer 121 on the active layer 119. ), A second conductivity type semiconductor layer 123 on the electron blocking layer 121, a metal oxide layer 135 on the second conductivity type semiconductor layer 123, and the second conductivity type semiconductor layer Between 123 and the metal oxide layer 135, the nanostructure 131 and a plurality of protrusions 31, a low refractive layer 145 on the metal oxide layer 135, and the low refractive layer 145 ) On the reflective layer 151.

The plurality of protrusions 31 protrude from the upper surface of the second conductive type semiconductor layer 123, and the nanostructure 131 is the second conductive type semiconductor layer in the region between the plurality of protrusions 31 ( 123). The plurality of protrusions 31 may be formed of a conductive semiconductor, and may be formed of the same semiconductor as the second conductive semiconductor layer 123 or another semiconductor. The nanostructure 131 includes a silver (Ag) material, and is in contact with an upper surface of the second conductive semiconductor layer 123.

The metal oxide layer 135 is disposed on the plurality of protrusions 31 and the plurality of nanostructures 131, and at least a portion of the metal oxide layer 135 may be disposed in the recess 32 between the plurality of protrusions 31. . The metal oxide layer 135 is a conductive material, and is electrically connected to the plurality of protrusions 31 and the nanostructure 131.

The metal oxide layer 135 may be formed of a concavo-convex layer, and its thickness may be formed to 10 nm or less. The metal oxide layer 135 is formed of a conductive and transmissive material, for example, a material having at least one of the materials constituting the nanostructure 131 and the low refractive layer 145. .

A low refractive layer 145 is disposed on the metal oxide layer 135, and the low refractive layer 145 may be formed of a light-transmitting and conductive material. A reflective layer 151 is disposed on the low refractive layer 145, and the reflective layer 151 reflects light incident through the low refractive layer 145.

The metal oxide layer 135 and the nanostructure 131 are in contact with the surfaces of the second conductive semiconductor layer 123 and the protrusion 31, thereby improving forward voltage characteristics and improving light extraction efficiency. have.

5 is a side cross-sectional view showing a light emitting device according to a fifth embodiment. In describing the fifth embodiment, the same configuration as the first embodiment will be referred to the first embodiment.

Referring to FIG. 5, the light emitting device includes a first conductivity type semiconductor layer 117, an active layer 119 on the first conductivity type semiconductor layer 117, and an electron blocking layer 121 on the active layer 119. ), A second conductive semiconductor layer 123 on the electron blocking layer 121, a reflective layer 151 on the second conductive semiconductor layer 123, 123, and the second conductive semiconductor The first and second low refractive layers 147 and 149 between the layer 123 and the reflective layer 151, and the metal oxide layer 137 between the first and second low refractive layers 147 and 149, and the first A nanostructure 131 and a plurality of protrusions 31 are included between the low refractive index layer 147 and the second conductive semiconductor layer 123.

The metal oxide layer 137 may be formed of a material in which at least one of the elements constituting the first low refractive layer 147 is combined with an element constituting the nanostructure 131. For example, the metal oxide layer 137 may be formed of silver oxide, for example, Ag ₂ O.

The first low refractive layer 147 is in contact with the plurality of protrusions 31 protruding from the second conductive semiconductor layer 123 and the nanostructure 131, and the second conductive semiconductor layer 123 It can improve the electrical characteristics of.

A metal oxide layer 137 is disposed on the first low refractive layer 147, and a second low refractive layer 149 is disposed on the metal oxide layer 137. The metal oxide layer 137 may have enhanced adhesion to the first and second low refractive layers 147 and 149.

The first and second low refractive layers 147 and 149 may be formed of the same material or different materials, and include at least one of metal oxide, metal nitride, and metal oxynitride.

6 is a first modified example of the light emitting device of FIG. 1, and has a structure in which an electrode and a substrate are disposed.

Referring to FIG. 6, the light emitting device includes a substrate 111 under the light emitting structure 110, a buffer layer 113 and a low conductive layer 115 between the substrate 111 and the light emitting structure 110. The first electrode 103 may be disposed on a portion of the first conductive semiconductor layer 117, and the second electrode 105 may be disposed on the reflective layer 151.

The substrate 111 may be, for example, a transmissive, conductive substrate, or insulating substrate. For example, the substrate 111 is sapphire (Al ₂ O ₃ ), SiC, Si, GaAs, GaN, ZnO, GaP, InP, Ge, and Ga ₂ 0 ₃ At least one of them can be used. A plurality of protrusions 112 may be formed on the upper surface of the substrate 111, and the plurality of protrusions 112 may be formed through etching of the substrate 111, or a light extraction structure such as separate roughness It can be formed of. The protrusion 112 may include a stripe shape, a hemispherical shape, or a dome shape. The thickness of the substrate 111 may be formed in a range of 30㎛ ~ 300㎛, it is not limited.

A plurality of compound semiconductor layers may be grown on the substrate 111, and the growth equipment of the plurality of compound semiconductor layers may be an electron beam evaporator, physical vapor deposition (PVD), chemical vapor deposition (CVD), or plasma laser deposition (PLD). , Can be formed by dual-type thermal evaporator sputtering, metal organic chemical vapor deposition (MOCVD), and the like, but is not limited to such equipment.

A buffer layer 113 may be formed between the substrate 111 and the first conductive semiconductor layer 117. The buffer layer 113 may be formed of at least one layer using a group II to VI compound semiconductor. The buffer layer 113 includes a semiconductor layer using a group III-V compound semiconductor, for example, In _x Al _y Ga _{1 -x- y} N (0≤x≤1, 0≤y≤1, 0≤x As a semiconductor having a composition formula of + y≤1), at least one of compound semiconductors such as GaN, InN, AlN, InGaN, AlGaN, InAlGaN, AlInN, and the like is included. The buffer layer 113 may be formed in a super lattice structure by alternately arranging different semiconductor layers. The buffer layer 113 may be formed to alleviate the difference in the lattice constant between the substrate 111 and the nitride-based semiconductor layer, and may be defined as a defect control layer. The buffer layer 113 may have a value between a lattice constant between the substrate 111 and a nitride-based semiconductor layer. The buffer layer 113 may be formed of an oxide such as a ZnO layer, but is not limited thereto. The buffer layer 113 may be formed in a range of 30 to 500 nm, but is not limited thereto. The buffer layer 113 may not be formed.

A low conductive layer 115 is formed between the buffer layer 113 and the first conductive semiconductor layer 117, and the low conductive layer 115 is an undoped semiconductor layer, and the first conductive semiconductor layer 117 ) It has a lower electrical conductivity. The low-conductivity layer 115 may be implemented as a GaN-based semiconductor using a group III-V compound semiconductor, and such an undoped semiconductor layer has a first conductivity type property even if it is not intentionally doped with a conductive dopant. The undoped semiconductor layer may not be formed, but is not limited thereto. The low conductive layer 115 may be further disposed between the first conductive semiconductor layer 117.

A first conductive semiconductor layer 117 may be formed between the low conductive layer 115 and the active layer 119. The first conductive semiconductor layer 117 may be formed of an n-type semiconductor layer. At least one of the low conductive layer 115 and the first conductive semiconductor layer 117 may be formed in a superlattice structure in which different first and second layers are alternately arranged, and the first layer And the thickness of the second layer may be formed of a number A or more.

The active layer 119 is at least one of a single well, a single quantum well layer, multiple wells, a multi quantum well structure (MQW), a quantum-wire structure, or a quantum dot structure Can be formed. In the active layer 119, a quantum well layer and a quantum barrier layer are alternately arranged, and a pair of the quantum well layer and the quantum barrier layer may be formed in 2 to 30 cycles.

The second conductivity-type semiconductor layer 123 may be implemented as at least one of a group III-V and II-VI compound semiconductor, and a second conductivity-type dopant may be doped. For example, the second conductivity type semiconductor layer 123 may be formed of a p-type semiconductor layer.

In an embodiment, the first conductivity type semiconductor layer 117 may be implemented as an n type semiconductor layer, and the second conductivity type semiconductor layer 123 may be implemented as a p type semiconductor layer, but is not limited thereto. In addition, a semiconductor having an opposite polarity to the second conductivity type, for example, an n-type semiconductor layer (not shown) may be formed on the second conductivity type semiconductor layer 123. Accordingly, the light emitting structure 110 may be implemented as any one of an n-p junction structure, a p-n junction structure, an n-p-n junction structure, and a p-n-p junction structure. An embodiment is to provide a light emitting device having the above-described light emitting structure, a method of manufacturing the light emitting device, a light emitting device package and a lighting system.

An electron blocking layer 121 is included between the active layer 119 and the second conductivity type semiconductor layer 123. The electron blocking layer 121 may include a p-type dopant.

A nanostructure 131 may be formed on the second conductive semiconductor layer 123 between a plurality of protrusions 31 made of a semiconductor and the plurality of protrusions 31. A low refractive layer 141 is disposed on the plurality of protrusions 31 and the nanostructure 131, and a reflective layer 151 is disposed on the low refractive layer 141.

A first electrode 153 is electrically connected to the first conductive semiconductor layer 117, and a second electrode 105 is disposed on the reflective layer 151.

The first electrode 153 and the second electrode 155 may further have a current diffusion pattern having an arm structure or a finger structure. The first electrode 153 and the second electrode 155 are formed of metals such as Ti, Ru, Rh, Ir, Mg, Zn, Al, In, Ta, Pd, Co, Ni, Si, Ge, Ag, and Au. It can be selected from these optional alloys.

The light emitting device may be mounted on a board (PCB) in a flip manner, but is not limited thereto.

7 is a view showing an example of a vertical type light emitting device using the light emitting device of FIG. 1.

Referring to FIG. 7, the light emitting device includes a plurality of nanostructures (eg, a light emitting structure layer 110, a plurality of protrusions 31 below the light emitting structure layer 110, and a recess between the plurality of protrusions 31). 131), a second electrode 170 having a plurality of conductive layers 141,151,165 under the plurality of protrusions 31 and the nanostructure 131, and a supporting member 167 under the second electrode 170 And, a first electrode 181 on the light emitting structure 110.

The second conductive semiconductor layer 123 includes a plurality of protrusions 31 protruding to the bottom surface, and a conductive nanostructure 131 is disposed between the plurality of protrusions 31.

The second electrode 170 includes a low refractive layer 141, a reflective layer 151, and a bonding layer 165 disposed under the second conductive semiconductor layer 123.

The low-refractive layer 141 contacts under the protrusion 31 and the nanostructure 131 and includes at least one of metal oxide, metal nitride, and metal oxynitride. The low refractive layer 141 may have a lower surface and an upper surface formed by uneven surfaces, but is not limited thereto.

The reflective layer 151 is disposed under the low-refractive layer 141 and is a group consisting of metals, such as Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Au, Hf, and combinations thereof It may be formed of a structure including at least one layer made of a material selected from. The reflective layer 151 may be formed of the same material as the nanostructure 131, for example, Ag.

The bonding layer 165 is formed under the reflective layer 151, and may be used as a barrier metal or a bonding metal, and for example, Ti, Au, Sn, Ni, Cr, Ga, In, Bi, Cu, Ag, and Ta and optional alloys.

A channel layer 163 is disposed on a peripheral portion of the lower surface of the light emitting structure 110, and the channel layer 163 is disposed around a lower surface of the second conductive semiconductor layer 123, and some of the light emitting structure It may extend outward than the side of (110).

The channel layer 163 may be formed in a ring shape, a loop shape, or a frame shape having an open area therein. The channel layer 163 is an insulating material or a conductive material, for example, ITO, IZO, IZTO, IAZO, IGZO, IGTO, AZO, ATO, SiO ₂ , SiO _x , SiO _x N _y , Si ₃ N ₄ , Al ₂ O ₃ , TiO ₂ . The inner region of the channel layer 163 contacts the lower surface of the second conductive semiconductor layer 123, and at least one of the plurality of protrusions 31 may be disposed. The protrusion 31 disposed in the channel layer 163 may change a critical angle of light and enhance adhesion of the channel layer 163.

The reflective layer 151 may be disposed to overlap the channel layer 163 in a vertical direction, thereby maximizing the reflective effect. The low refractive index layer 141 may be disposed to overlap the channel layer 163 in a vertical direction, thereby enhancing adhesion at the interface with the channel layer 163.

A supporting member 167 is formed under the bonding layer 165, and the supporting member 167 may be formed of a conductive member, and the material is copper (Cu-copper), gold (Au-gold), nickel (Ni-nickel), molybdenum (Mo), copper-tungsten (Cu-W), carrier wafers (eg, Si, Ge, GaAs, ZnO, SiC, etc.) may be formed of a conductive material. The support member 167 may be implemented as a conductive sheet as another example.

The first conductive semiconductor layer 117 may be formed with a light extraction structure 117A such as roughness. An insulating layer may be further formed on the side surface and the top surface of the light emitting structure 110, but is not limited thereto. Accordingly, a light emitting device having a vertical electrode structure having a first electrode 181 and a supporting member 167 on the light emitting structure 110 may be provided.

8 is an example in which the light emitting device of FIG. 7 is modified.

Referring to FIG. 8, the light emitting device includes a plurality of nanostructures (eg, a light emitting structure layer 110, a plurality of protrusions 31 under the light emitting structure layer 110, and a recess between the plurality of protrusions 31). 131), a second electrode 170 having a plurality of conductive layers 141,151,165 under the plurality of protrusions 31 and the nanostructure 131, and a supporting member 167 under the second electrode 170 And, a first electrode 181 on the light emitting structure 110.

The protrusion 31 made of a semiconductor material may be removed in the channel layer 163. By removing the protrusion 31 on the channel layer 163, it is possible to block the effect of the light emitting structure 110 when etching the channel region of the light emitting structure 110.

9 is a modified example of the light emitting device of FIG. 7.

Referring to FIG. 9, a light emitting device includes a plurality of nanostructures (eg, a light emitting structure layer 110, a plurality of protrusions 31 under the light emitting structure layer 110, and a recess between the plurality of protrusions 31). 131), a second electrode 170 having a plurality of conductive layers 141,151,165 under the plurality of protrusions 31 and the nanostructure 131, and a supporting member 167 under the second electrode 170 In addition, a current blocking layer 161 is included in a first electrode 181 on the light emitting structure 110 and a region corresponding to the first electrode 181 among the lower regions of the light emitting structure 110.

The current blocking layer 161 may overlap the first electrode 181 in at least a portion in a vertical direction, or may be formed to be at least wider than the width of the first electrode 181 or less than twice the width.

The current blocking layer 161 is disposed under the plurality of protrusions 31 and the nanostructure 131 protruding below the light emitting structure layer 110, and may be formed of an insulating material. The current blocking layer 161 is SiO ₂ , SiO _x , SiO _x N _y , Si ₃ N ₄ , Al ₂ O ₃ , TiO ₂ It may include at least one.

The current blocking layer 161 corresponds to a thickness direction of the first electrode 181 and the light emitting structure 110 disposed on the light emitting structure 110, and the plurality of protrusions 31 and the first low refractive index It is disposed between the layers 141. At least one of the plurality of protrusions 31 may be contacted. The current blocking layer 161 may block the current supplied from the second electrode 170 and diffuse it in another path.

The protrusion 31 disposed in the current blocking layer 161 and the conductive nano-structure 131 may be removed, but are not limited thereto.

<Light emitting device package>

FIG. 10 is a view showing a light emitting device package having the light emitting device of FIG. 7.

Referring to FIG. 10, the light emitting device package includes a body 15, a first lead electrode 16 and a second lead electrode 17 having at least a portion disposed on the body 15, and on the body 15 The first lead electrode 16 and the second lead electrode 17 in accordance with an embodiment that is electrically connected to the light emitting element 11, and the body 15 surrounding the light emitting element 11 on the It includes a molding member (18).

The body 15 may be formed of a silicon material, a synthetic resin material, or a metal material. The body 15 has a cavity therein and an inclined surface around it when viewed from above.

The first lead electrode 16 and the second lead electrode 17 are electrically separated from each other, and may be formed to penetrate inside the body 15. That is, a portion of the first lead electrode 16 and the second lead electrode 17 may be disposed inside the cavity, and the other portion may be disposed outside the body 15.

The first lead electrode 16 and the second lead electrode 17 may supply power to the light emitting element 11 and reflect light generated from the light emitting element 11 to increase light efficiency, The heat generated by the light emitting element 11 may function to be discharged to the outside.

The light emitting element 11 may be installed on the body 15 or on the first lead electrode 16 and / or the second lead electrode 17. The light emitting devices 11 may be arranged in one or a plurality, and may include a light emitting diode in a visible light band such as red, green, blue, or white, or a UV light emitting diode that emits ultraviolet light (UV, Ultra Violet). . A phosphor layer may be further disposed on the surface of the light emitting element 11, but is not limited thereto.

The wire 12 of the light emitting element 11 may be electrically connected to either the first lead electrode 16 or the second lead electrode 17, but is not limited thereto.

The molding member 18 may surround the light emitting element 11 to protect the light emitting element 11. In addition, the molding member 18 includes a phosphor, and the wavelength of light emitted from the light emitting element 11 may be changed by the phosphor. A lens may be disposed on the molding member 18, but is not limited thereto.

<Lighting system>

The light emitting device or the light emitting device package according to the embodiment may be applied to a lighting system. The lighting system includes a structure in which a plurality of light emitting elements or a light emitting element package is arrayed, and includes the display device shown in FIGS. 11 and 12, the lighting device shown in FIG. 13, a lighting lamp, a traffic light, a vehicle headlight, and a display board And the like.

11 is an exploded perspective view of a display device having a light emitting device or a light emitting device package according to an embodiment.

Referring to FIG. 11, the display device 1000 according to an exemplary embodiment includes a light guide plate 1041, a light source module 1031 providing light to the light guide plate 1041, and a reflective member 1022 under the light guide plate 1041. ), An optical sheet 1051 on the light guide plate 1041, a display panel 1061 on the optical sheet 1051, the light guide plate 1041, a light source module 1031, and a reflective member 1022. It may include a bottom cover 1011, but is not limited thereto.

The bottom cover 1011, the reflective sheet 1022, the light guide plate 1041, and the optical sheet 1051 may be defined as a light unit 1050.

The light guide plate 1041 serves to diffuse light and make a surface light source. The light guide plate 1041 is made of a transparent material, for example, acrylic resin series such as PMMA (polymethyl metaacrylate), PET (polyethylene terephthlate), PC (poly carbonate), COC (cycloolefin copolymer) and PEN (polyethylene naphthalate) It may include one of the resin.

The light source module 1031 provides light to at least one side of the light guide plate 1041, and ultimately acts as a light source of the display device.

The light source module 1031 includes at least one, and may directly or indirectly provide light from one side of the light guide plate 1041. The light source module 1031 includes a board 1033 and a light emitting device package 1035 or a light emitting device according to the embodiment disclosed above, and the light source 1035 such as the light emitting device or the light emitting device package includes the board 1033 ) May be arranged at predetermined intervals.

The board 1033 may be a printed circuit board (PCB) including a circuit pattern (not shown). However, the board 1033 may include not only a general PCB, but also a metal core PCB (MCPCB, metal core PCB), a flexible PCB (FPCB), and the like. When the light source 1035 is mounted on a side surface of the bottom cover 1011 or a heat radiation plate, the board 1033 may be removed. Here, a part of the heat dissipation plate may be in contact with the top surface of the bottom cover 1011.

In addition, the plurality of light sources 1035 may be mounted such that an emission surface on which the light is emitted on the board 1033 is spaced a predetermined distance from the light guide plate 1041, but is not limited thereto. The light source 1035 may directly or indirectly provide light to a light incident portion, which is one side of the light guide plate 1041, but is not limited thereto.

The reflective member 1022 may be disposed under the light guide plate 1041. The reflection member 1022 may improve the luminance of the light unit 1050 by reflecting light incident on the bottom surface of the light guide plate 1041 and facing upward. The reflective member 1022 may be formed of, for example, PET, PC, or PVC resin, but is not limited thereto. The reflective member 1022 may be an upper surface of the bottom cover 1011, but is not limited thereto.

The bottom cover 1011 may accommodate the light guide plate 1041, a light source module 1031, a reflective member 1022, and the like. To this end, the bottom cover 1011 may be provided with an accommodating portion 1012 having a box shape with an open top surface, but is not limited thereto. The bottom cover 1011 may be combined with a top cover, but is not limited thereto.

The bottom cover 1011 may be formed of a metal material or a resin material, and may be manufactured using a process such as press molding or extrusion molding. In addition, the bottom cover 1011 may include a metal or non-metal material having good thermal conductivity, but is not limited thereto.

The display panel 1061 is, for example, an LCD panel, and includes first and second substrates of transparent materials facing each other, and a liquid crystal layer interposed between the first and second substrates. A polarizing plate may be attached to at least one surface of the display panel 1061, and is not limited to the attachment structure of the polarizing plate. The display panel 1061 displays information by light passing through the optical sheet 1051. The display device 1000 may be applied to various portable terminals, notebook computer monitors, laptop computer monitors, televisions, and the like.

The optical sheet 1051 is disposed between the display panel 1061 and the light guide plate 1041, and includes at least one transmissive sheet. The optical sheet 1051 may include at least one of a sheet such as a diffusion sheet, a horizontal and vertical prism sheet, and a brightness enhancing sheet. The diffusion sheet diffuses the incident light, the horizontal or / and vertical prism sheet condenses the incident light into the display area, and the luminance enhancement sheet reuses the lost light to improve luminance. In addition, a protective sheet may be disposed on the display panel 1061, but is not limited thereto.

Here, as the optical member on the light path of the light source module 1031, the light guide plate 1041 and the optical sheet 1051 may be included, but is not limited thereto.

12 is a view showing a display device having a light emitting device or a light emitting device package according to an embodiment.

Referring to FIG. 12, the display device 1100 includes a bottom cover 1152, a board 1120 in which a light source 1124 having a light emitting device or a light emitting device package disclosed above is arrayed, an optical member 1154, and a display panel (1155).

The board 1120 and the light source 1124 may be defined as a light source module 1060. The bottom cover 1152, at least one light source module 1060, and the optical member 1154 may be defined as a light unit 1150. The bottom cover 1152 may include a storage unit 1153, which is not limited thereto. The light source module 1060 includes a board 1120 and a plurality of light sources 1124 arranged on the board 1120.

Here, the optical member 1154 may include at least one of a lens, a light guide plate, a diffusion sheet, a horizontal and vertical prism sheet, and a brightness enhancing sheet. The light guide plate may be made of PC material or PMMA (poly methyl methacrylate) material, and the light guide plate may be removed. The diffusion sheet diffuses the incident light, the horizontal and vertical prism sheets condense the incident light into the display area, and the luminance enhancement sheet reuses the lost light to improve luminance.

The optical member 1154 is disposed on the light source module 1060, and performs light or surface diffusion of light emitted from the light source module 1060.

13 is an exploded perspective view of a lighting device having a light emitting device or a light emitting device package according to an embodiment.

Referring to FIG. 13, the lighting device according to the embodiment may include a cover 2100, a light source module 2200, a heat radiator 2400, a power supply unit 2600, an inner case 2700, and a socket 2800. Can be. In addition, the lighting device according to the embodiment may further include any one or more of the member 2300 and the holder 2500. The light source of the light source module 2200 may include a light emitting device or a light emitting device package according to an embodiment.

For example, the cover 2100 may have a shape of a bulb or a hemisphere, a hollow portion, and a portion of the cover 2100 may be opened. The cover 2100 may be optically coupled to the light source module 2200 and may be coupled to the radiator 2400. The cover 2100 may have a coupling portion coupled to the heat radiator 2400.

A milky white coating having a diffusion material may be coated on the inner surface of the cover 2100. Light from the light source module 2200 may be scattered and diffused to emit light using the milky white material.

The material of the cover 2100 may be glass, plastic, polypropylene (PP), polyethylene (PE), polycarbonate (PC), or the like. Here, the polycarbonate is excellent in light resistance, heat resistance and strength. The cover 2100 may be transparent so that the light source module 2200 is visible from the outside, and may be opaque. The cover 2100 may be formed through blow molding.

The light source module 2200 may be disposed on one surface of the radiator 2400. Accordingly, heat from the light source module 2200 is conducted to the heat sink 2400. The light source module 2200 may include a light source 2210, a connection plate 2230, and a connector 2250.

The member 2300 is disposed on an upper surface of the radiator 2400 and has guide grooves 2310 into which a plurality of lighting elements 2210 and a connector 2250 are inserted. The guide groove 2310 corresponds to the board and connector 2250 of the lighting element 2210.

The surface of the member 2300 may be coated or coated with a white paint. The member 2300 reflects light that is reflected on the inner surface of the cover 2100 and returns to the direction of the light source module 2200 again in the direction of the cover 2100. Therefore, it is possible to improve the light efficiency of the lighting device according to the embodiment.

The member 2300 may be made of an insulating material, for example. The connection plate 2230 of the light source module 2200 may include an electrically conductive material. Accordingly, electrical contact may be made between the heat sink 2400 and the connection plate 2230. The member 2300 may be formed of an insulating material to block electrical shorts between the connection plate 2230 and the heat radiator 2400. The radiator 2400 radiates heat by receiving heat from the light source module 2200 and heat from the power supply unit 2600.

The holder 2500 closes the storage groove 2719 of the insulating portion 2710 of the inner case 2700. Therefore, the power supply unit 2600 accommodated in the insulation portion 2710 of the inner case 2700 is sealed. The holder 2500 has a guide protrusion 2510. The guide protrusion 2510 may include a hole through which the protrusion 2610 of the power supply unit 2600 passes.

The power supply unit 2600 processes or converts an electrical signal provided from the outside and provides it to the light source module 2200. The power supply unit 2600 is accommodated in a storage groove 2719 of the inner case 2700 and is sealed inside the inner case 2700 by the holder 2500.

The power supply unit 2600 may include a protrusion 2610, a guide portion 2630, a base 2650, and an extension portion 2670.

The guide portion 2630 has a shape protruding from the side of the base 2650 to the outside. The guide part 2630 may be inserted into the holder 2500. A plurality of parts may be disposed on one surface of the base 2650. The plurality of parts may include, for example, a DC converter, a driving chip for controlling the driving of the light source module 2200, an ESD (ElectroStatic discharge) protection element to protect the light source module 2200, etc. It is not limited.

The extension portion 2670 has a shape protruding from the other side of the base 2650 to the outside. The extension part 2670 is inserted into the connection part 2750 of the inner case 2700 and receives an electrical signal from the outside. For example, the extension portion 2670 may be provided equal to or smaller than the width of the connection portion 2750 of the inner case 2700. The extension 2670 may be electrically connected to the socket 2800 through a wire.

The inner case 2700 may include a molding unit together with the power supply unit 2600 therein. The molding part is a part in which the molding liquid is hardened, so that the power supply part 2600 can be fixed inside the inner case 2700.

Features, structures, effects, etc. described in the above embodiments are included in at least one embodiment of the present invention, and are not necessarily limited to only one embodiment. Furthermore, features, structures, effects, and the like exemplified in each embodiment may be combined or modified for other embodiments by a person having ordinary knowledge in the field to which the embodiments belong. Therefore, the contents related to such combinations and modifications should be interpreted as being included in the scope of the present invention.

111: substrate 113: buffer layer
115: low conductive layer 117: first conductive semiconductor layer
119: active layer 121: electron blocking layer
123: second conductive semiconductor layer 31,33: projection
131,132: nanostructures 133,135,137: metal oxide layer
141,142,143,145,147,149: low refractive layer
151: reflective layer 161: current blocking layer
165: bonding layer 167: support member
105,170: Second electrode

Claims (15)

A first conductive semiconductor layer;
An active layer disposed on the first conductive semiconductor layer;
A second conductive type semiconductor layer disposed on the active layer;
A plurality of protrusions disposed on the second conductive semiconductor layer;
A conductive nano-structure disposed between the plurality of protrusions; And
It includes; a plurality of protrusions and a conductive first refractive layer disposed on the nanostructure;
The first refractive layer has a refractive index lower than the refractive index of the light emitting structure including the first conductive semiconductor layer, the active layer and the second conductive semiconductor layer,
The first refractive layer is a light emitting device that directly contacts the upper surface of the plurality of protrusions and a part of the side surfaces of the plurality of protrusions. A first conductive semiconductor layer;
An active layer disposed on the first conductive semiconductor layer;
A second conductive type semiconductor layer disposed on the active layer;
A plurality of protrusions protruding from the upper surface of the second conductive type semiconductor layer;
A conductive first refractive layer disposed on the plurality of protrusions; And
Containing; a conductive nano-structure disposed on the first refractive layer;
The upper surface of the first refractive layer includes a first concave surface concave in the upper surface direction of the second conductive semiconductor layer,
The conductive nano-structure is disposed on the first concave surface,
The first refractive layer has a refractive index lower than the refractive index of the light emitting structure including the first conductive semiconductor layer, the active layer and the second conductive semiconductor layer,
The first refractive layer is a light emitting device that directly contacts the top surface of the plurality of protrusions, a side surface of the plurality of protrusions, and a bottom surface of the nanostructure. According to claim 1,
And a reflective layer disposed on the first refractive layer,
The reflective layer is a light emitting device comprising a metal having a light reflectance of 70% or more. The method according to claim 1 or 2,
The nanostructure includes silver (Ag),
The plurality of protrusions include the same semiconductor material as the second conductive type semiconductor layer or another semiconductor material. The method according to claim 1 or 2,
The first refractive layer is a light emitting device comprising at least one of a light-transmissive metal oxide, metal nitride and metal oxynitride. The method according to claim 1 or 2,
The plurality of protrusions are electrically connected to the first refractive layer,
Each of the plurality of protrusions has a lower width than the upper width of the light emitting device. According to claim 2,
And a conductive second refractive layer disposed on the first refractive layer,
The second refractive layer has a refractive index lower than that of the light emitting structure including the first conductive semiconductor layer, the active layer, and the second conductive semiconductor layer. The method of claim 7,
And a reflective layer disposed on the second refractive layer,
The reflective layer is a light emitting device comprising a metal having a light reflectance of 70% or more. According to claim 1,
The first refractive layer is a light emitting device that directly contacts the top surface of the nanostructure. According to claim 1,
And a metal oxide layer disposed between the nanostructure and the first refractive layer,
The metal oxide layer is a light emitting device comprising a material that is combined with at least one of the elements constituting the nanostructure and the elements constituting the first refractive layer. The method of claim 10,
The metal oxide layer covers the surface of the nanostructure,
The first refractive layer is a light emitting device spaced apart from the nanostructure by the metal oxide layer. According to claim 2,
In the region between the plurality of protrusions, a concave portion is formed,
The concave portion is a light emitting device that overlaps the first concave surface of the first refractive layer in a vertical direction. delete delete delete

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