KR102092842B1 - 표시 패널 및 이의 제조 방법 - Google Patents

표시 패널 및 이의 제조 방법 Download PDF

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KR102092842B1
KR102092842B1 KR1020130093599A KR20130093599A KR102092842B1 KR 102092842 B1 KR102092842 B1 KR 102092842B1 KR 1020130093599 A KR1020130093599 A KR 1020130093599A KR 20130093599 A KR20130093599 A KR 20130093599A KR 102092842 B1 KR102092842 B1 KR 102092842B1
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layer
color
protective film
light emitting
color filter
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KR20150017540A (ko
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김영도
홍정무
기인서
주영길
최석
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삼성디스플레이 주식회사
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Priority to KR1020130093599A priority Critical patent/KR102092842B1/ko
Priority to US14/159,114 priority patent/US9082668B2/en
Priority to CN202110190257.8A priority patent/CN112993000B/zh
Priority to CN201410165737.9A priority patent/CN104347670B/zh
Priority to JP2014095629A priority patent/JP6729993B2/ja
Publication of KR20150017540A publication Critical patent/KR20150017540A/ko
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Publication of KR102092842B1 publication Critical patent/KR102092842B1/ko
Priority to JP2020114605A priority patent/JP7153044B2/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/38—Devices specially adapted for multicolour light emission comprising colour filters or colour changing media [CCM]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0212—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or coating of substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
    • H10H29/142—Two-dimensional arrangements, e.g. asymmetric LED layout
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/86—Arrangements for improving contrast, e.g. preventing reflection of ambient light
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/8791—Arrangements for improving contrast, e.g. preventing reflection of ambient light
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/302—Details of OLEDs of OLED structures
    • H10K2102/3023—Direction of light emission
    • H10K2102/3026—Top emission
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/842—Containers
    • H10K50/8426—Peripheral sealing arrangements, e.g. adhesives, sealants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/844—Encapsulations
    • H10K50/8445—Encapsulations multilayered coatings having a repetitive structure, e.g. having multiple organic-inorganic bilayers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/122—Pixel-defining structures or layers, e.g. banks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/87—Passivation; Containers; Encapsulations
    • H10K59/871—Self-supporting sealing arrangements
    • H10K59/8722—Peripheral sealing arrangements, e.g. adhesives, sealants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/87—Passivation; Containers; Encapsulations
    • H10K59/873—Encapsulations
    • H10K59/8731—Encapsulations multilayered coatings having a repetitive structure, e.g. having multiple organic-inorganic bilayers

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  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Optical Filters (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
KR1020130093599A 2013-08-07 2013-08-07 표시 패널 및 이의 제조 방법 Active KR102092842B1 (ko)

Priority Applications (6)

Application Number Priority Date Filing Date Title
KR1020130093599A KR102092842B1 (ko) 2013-08-07 2013-08-07 표시 패널 및 이의 제조 방법
US14/159,114 US9082668B2 (en) 2013-08-07 2014-01-20 Display panel and method of manufacturing the same
CN202110190257.8A CN112993000B (zh) 2013-08-07 2014-04-23 显示面板及其制造方法
CN201410165737.9A CN104347670B (zh) 2013-08-07 2014-04-23 显示面板及其制造方法
JP2014095629A JP6729993B2 (ja) 2013-08-07 2014-05-07 表示パネル及びその製造方法
JP2020114605A JP7153044B2 (ja) 2013-08-07 2020-07-02 表示パネル及びその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020130093599A KR102092842B1 (ko) 2013-08-07 2013-08-07 표시 패널 및 이의 제조 방법

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KR1020200033192A Division KR102158365B1 (ko) 2020-03-18 2020-03-18 표시 패널 및 이의 제조 방법

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KR20150017540A KR20150017540A (ko) 2015-02-17
KR102092842B1 true KR102092842B1 (ko) 2020-04-16

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US (1) US9082668B2 (enExample)
JP (2) JP6729993B2 (enExample)
KR (1) KR102092842B1 (enExample)
CN (2) CN104347670B (enExample)

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JP2015069700A (ja) * 2013-09-26 2015-04-13 株式会社ジャパンディスプレイ 表示装置
KR102142481B1 (ko) * 2013-12-30 2020-08-07 엘지디스플레이 주식회사 유기전계 발광소자
JP2016081562A (ja) * 2014-10-09 2016-05-16 ソニー株式会社 表示装置、表示装置の製造方法および電子機器
JP2016119185A (ja) * 2014-12-19 2016-06-30 株式会社ジャパンディスプレイ 画像表示装置
KR102442415B1 (ko) 2015-04-28 2022-09-13 삼성디스플레이 주식회사 유기 발광 표시 장치
US20160322603A1 (en) * 2015-04-30 2016-11-03 EverDisplay Optonics (Shanghai) Limited Display structure and manufacturing method of display device
JP6685675B2 (ja) 2015-09-07 2020-04-22 株式会社Ｊｏｌｅｄ 有機ｅｌ素子、それを用いた有機ｅｌ表示パネル、及び有機ｅｌ表示パネルの製造方法
CN105136378B (zh) * 2015-09-24 2018-04-20 京东方科技集团股份有限公司 一种显示基板及显示装置
KR102467806B1 (ko) 2015-10-23 2022-11-17 삼성디스플레이 주식회사 유기 발광 표시 장치 및 유기 발광 표시 장치의 제조 방법
CN106783910A (zh) * 2015-11-23 2017-05-31 上海和辉光电有限公司 柔性oled显示面板阳极制备方法及显示面板制备方法
JP2017152257A (ja) * 2016-02-25 2017-08-31 株式会社ジャパンディスプレイ 表示装置
JP6486848B2 (ja) * 2016-02-25 2019-03-20 株式会社ジャパンディスプレイ 表示装置およびその製造方法
KR102454824B1 (ko) * 2016-03-25 2022-10-18 삼성디스플레이 주식회사 플렉서블 표시장치
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KR102694369B1 (ko) * 2016-06-20 2024-08-14 삼성디스플레이 주식회사 전자 장치 및 이의 제조 방법
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KR102608416B1 (ko) * 2016-09-06 2023-12-01 삼성디스플레이 주식회사 디스플레이 장치
CN107634149B (zh) * 2017-09-14 2025-07-18 京东方科技集团股份有限公司 显示装置及其制备方法
CN107561763A (zh) * 2017-09-29 2018-01-09 厦门天马微电子有限公司 一种阵列基板、显示面板和显示装置
KR102510569B1 (ko) * 2017-10-27 2023-03-15 엘지디스플레이 주식회사 유기 발광 표시 장치
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KR102522591B1 (ko) 2018-02-05 2023-04-17 삼성디스플레이 주식회사 표시 장치 및 이의 제조 방법
CN108766980B (zh) * 2018-05-28 2021-02-23 武汉华星光电半导体显示技术有限公司 一种显示面板及显示装置
CN108807490B (zh) * 2018-06-29 2021-06-01 武汉天马微电子有限公司 有机发光显示面板和显示装置
KR102631253B1 (ko) * 2018-11-05 2024-01-31 삼성디스플레이 주식회사 플렉서블 디스플레이 장치
CN111986621B (zh) * 2020-08-06 2022-12-23 武汉华星光电半导体显示技术有限公司 Oled显示面板
CN113140575B (zh) * 2021-04-19 2024-04-19 京东方科技集团股份有限公司 阵列基板及其制备方法、显示面板、显示装置
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US20150041813A1 (en) 2015-02-12
CN104347670B (zh) 2021-03-09
CN104347670A (zh) 2015-02-11
JP6729993B2 (ja) 2020-07-29
CN112993000A (zh) 2021-06-18
JP7153044B2 (ja) 2022-10-13
JP2020170717A (ja) 2020-10-15
CN112993000B (zh) 2024-08-09
KR20150017540A (ko) 2015-02-17
US9082668B2 (en) 2015-07-14
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