KR102085924B1 - Light emitting device, and lighting system - Google Patents

Abstract

Embodiments relate to a light emitting device, a method of manufacturing the light emitting device, a light emitting device package and an illumination system.
The light emitting device according to the embodiment may include a first conductivity type semiconductor layer 116; An active layer 114 on the first conductive semiconductor layer 116; A second conductivity type semiconductor layer 112 having a first concentration on the active layer 114; A second conductivity type semiconductor layer having a second concentration higher than the first concentration on the second conductivity type semiconductor layer having the first concentration; And a transparent electrode layer 120 on the second conductivity type semiconductor layer having the second concentration.

Description

Light Emitting Device and Lighting System {LIGHT EMITTING DEVICE, AND LIGHTING SYSTEM}

Embodiments relate to a light emitting device, a method of manufacturing the light emitting device, a light emitting device package and an illumination system.

Light Emitting Device is a pn junction diode that converts electrical energy into light energy, and can be made of compound semiconductors such as group III and group V on the periodic table. It is possible.

The light emitting device combines n-layer electrons and p-layer holes when forward voltage is applied, and emits energy in the form of heat or light corresponding to the band gap energy of the conduction band and the valence band. If it is emitted in the form of light, it becomes a light emitting device.

For example, nitride semiconductors are receiving great attention in the field of optical devices and high power electronic devices due to their high thermal stability and wide bandgap energy. In particular, blue light emitting devices, green light emitting devices, and ultraviolet light emitting devices using nitride semiconductors are commercially used and widely used.

The light emitting devices are classified into horizontal light emitting devices in which n electrodes and p electrodes are arranged in the same direction and vertical light emitting devices arranged in opposite directions depending on the position of the electrodes.

On the other hand, the current injection efficiency is important to increase the internal luminous efficiency in the light emitting device, the light extraction efficiency is important to increase the external luminous efficiency.

However, in the case of the vertical light emitting device according to the prior art, when forming a transparent electrode such as ITO on the n-type semiconductor layer to form a Schottky (Schottky) junction, ITO can not be used as an electrode in n-GaN Since the current injection efficiency is lowered, there is a problem that the luminous flux is lowered.

In addition, according to the prior art there is a problem that the light emitted by the pad electrode formed on the n-type semiconductor layer is absorbed to reduce the light extraction efficiency.

On the other hand, in the prior art to increase the current injection efficiency and to form a so-called branch electrode for the current diffusion, there is a limit to maximize the current injection efficiency with such a branch electrode, increase the area to absorb the light emitted from the branch electrode light extraction There is a problem of lowering the efficiency.

Embodiments provide a light emitting device, a method of manufacturing a light emitting device, a light emitting device package, and an illumination system capable of increasing light extraction efficiency and increasing internal light emitting efficiency.

The light emitting device according to the embodiment may include a first conductivity type semiconductor layer 116; An active layer 114 on the first conductive semiconductor layer 116; A second conductivity type semiconductor layer 112 having a first concentration on the active layer 114; A second conductivity type semiconductor layer having a second concentration higher than the first concentration on the second conductivity type semiconductor layer having the first concentration; And a transparent electrode layer 120 on the second conductivity type semiconductor layer having the second concentration.

The lighting system according to the embodiment may include a light emitting unit having the light emitting element.

The embodiment can provide a light emitting device, a method of manufacturing a light emitting device, a light emitting device package, and an illumination system which can increase light extraction efficiency and increase internal light emitting efficiency.

1 is a cross-sectional view of a light emitting device according to a first embodiment.
2 is a plan view of a light emitting device according to the first embodiment;
3 to 8 are cross-sectional views of a method of manufacturing a light emitting device according to the embodiment;
9 is a sectional view of a light emitting device according to a second embodiment;
10 is a cross-sectional view of a light emitting device package according to the embodiment.
11 is an exploded perspective view of the lighting apparatus according to the embodiment.

In the description of an embodiment, each layer (film), region, pattern, or structure is “on / over” or “under” the substrate, each layer (film), region, pad, or pattern. In the case where it is described as being formed at, "on / over" and "under" include both "directly" or "indirectly" formed. do. In addition, the reference to the top / top or bottom of each layer will be described with reference to the drawings.

(Example)

1 is a cross-sectional view of a light emitting device 100 according to the first embodiment, and FIG. 2 is a plan view thereof.

Embodiments provide a light emitting device, a method of manufacturing a light emitting device, a light emitting device package, and an illumination system that can increase light extraction efficiency and increase internal light emitting efficiency.

To this end, the light emitting device 100 according to the embodiment includes a first conductive semiconductor layer 116, an active layer 114 on the first conductive semiconductor layer 116, and a first conductive semiconductor layer 116 on the active layer 114. The second conductivity type semiconductor layer 112 of one concentration, the second conductivity type semiconductor layer 118 of a second concentration higher than the first concentration on the second conductivity type semiconductor layer 112 of the first concentration, and The transparent electrode layer 120 may be included on the second conductive semiconductor layer 118 having the second concentration.

In an embodiment, the first conductivity type may be a p conductivity type and the second conductivity type may be an n conductivity type, but is not limited thereto.

In an embodiment, the pad electrode 160 may be provided on the transparent electrode layer 120. According to an embodiment, the pad electrode 160 may be formed in the corner region of the transparent electrode layer 120, but is not limited thereto.

In the case of the vertical light emitting device according to the related art, when forming a transparent electrode such as ITO on the n-type semiconductor layer, a Schottky junction is formed, so that ITO cannot be used as an electrode in n-GaN. there was.

In order to solve this problem, according to the embodiment, the second conductive semiconductor layer 118 having a second concentration higher than the first concentration may be formed on the surface of the second conductive semiconductor layer 112 having the first concentration. . As a result, resistance may be reduced by inducing electron tunneling with the second conductive semiconductor layer having the second concentration, the transparent electrode formed thereon, and the like.

For example, according to the embodiment, the second conductive semiconductor layer 118 having the second concentration is formed on the surface of the second conductive semiconductor layer 112 having the first concentration by annealing or ion implantation, and then the transparent electrode layer ( 120), the transparent electrode can be used as the electrode on the n-type GaN by inducing electron tunneling to reduce the resistance.

In an embodiment, the concentration of the second conductivity-type semiconductor layer of the second concentration is set higher than the concentration of the second conductivity-type semiconductor layer 112 of the first concentration, and the second concentration is 10 to 100 compared to the first concentration. The concentration difference may be twice as high, and the second difference may induce electron tunneling with the second conductive semiconductor layer 118 having the second concentration and the transparent electrode layer formed thereon.

For example, the second conductivity type semiconductor layer 112 of the first concentration is an n conductivity type semiconductor layer, the concentration may be less than about 10 ¹⁷ to 10 ¹⁸ (cm ⁻³ ), and the second conductivity type of the second concentration The semiconductor layer 118 is an n conductive semiconductor layer, but may be about 10 ¹⁸ to 10 ²⁰ (cm ⁻³ ) or less, but is not limited thereto.

The concentration of the second conductivity-type semiconductor layer 118 of the second concentration must be about 10 ¹⁸ (cm ^-3 ) or more to cause the tunneling effect at the interface with the transparent electrode, and the second concentration is about 10 ²⁰ (cm ^-3). It may be difficult to maintain crystallinity when

The second conductivity-type semiconductor layer 118 of the second concentration may be formed to a thickness of about 1 nm to 10 nm. When the second conductivity type semiconductor layer of the second concentration is more than 10nm, the thickness is too thick, it is difficult to occur the tunneling effect, if the thickness is less than 1nm it may be difficult to substantially contribute to tunneling.

According to the embodiment, by combining the second conductive semiconductor layer of the second concentration having a high concentration with the transparent electrode, the transparent electrode can be applied to the vertical light emitting device, and can be formed on the entire surface of the upper surface of the chip, so that current diffusion current spreading can be carried out efficiently. For example, the transparent electrode layer 120 may be formed on the entire upper surface of the second conductive semiconductor layer 118 having a second concentration.

Further, according to the embodiment, the tunneling effect between the transparent electrode and the second conductive semiconductor layer 118 having a high concentration of second concentration forms a transparent electrode on the upper surface of the vertical light emitting device, thereby increasing the current injection efficiency. The effect is to lower the voltage.

In addition, according to the embodiment, the transparent electrode may be adopted in the vertical light emitting device according to the introduction of the second conductivity type semiconductor layer 118 having a high concentration, thereby increasing the current injection efficiency and increasing the luminous flux. Can be.

In addition, according to the embodiment, the transparent electrode capable of tunneling with the second conductivity-type semiconductor layer 118 having the second concentration is introduced to the front surface of the vertical light emitting device, thereby reducing the size of the pad electrode, and the edge of the light emitting device. By minimizing the absorption of the light emitted, the light extraction efficiency can be increased.

On the other hand, in the prior art to increase the current injection efficiency and to form a so-called branch electrode for current diffusion, the branch electrode has a problem of absorbing light to reduce the light extraction efficiency. On the other hand, according to the embodiment, since the transparent electrode capable of tunneling with the second conductivity-type semiconductor layer 118 of the second concentration is introduced to the front surface of the vertical light emitting device, a separate branch electrode is unnecessary, thus reducing process cost and time. But there is no light absorbed by the branch electrode can increase the light extraction efficiency.

In addition, according to the prior art, in the vertical light emitting device, a current spreading layer is formed at the bottom of the pad electrode to spread the current, but according to the embodiment, since the current spreading is performed smoothly, the current spreading layer can be omitted. Process costs can be reduced.

According to the embodiment, it is possible to provide a light emitting device, a manufacturing method of the light emitting device, a light emitting device package, and an illumination system which can increase the light extraction efficiency and also increase the internal light emitting efficiency.

Hereinafter, a method of manufacturing a light emitting device according to an embodiment will be described with reference to FIGS. 3 to 8.

3, according to the embodiment, the second conductivity-type semiconductor layer 112, the active layer 114, and the first conductivity-type semiconductor layer 116 of the first concentration may be formed on the substrate 105. The second conductivity type semiconductor layer 112, the active layer 114, and the first conductivity type semiconductor layer 116 of the first concentration may be defined as the light emitting structure 110.

The substrate 105 may be formed of an insulating substrate or a conductive substrate. For example, the substrate 105 may be formed of at least one of sapphire substrate (Al ₂ O ₃ ), SiC, GaAs, GaN, ZnO, Si, GaP, InP, Ge, but is not limited thereto.

A buffer layer (not shown) formed of an undoped semiconductor layer or the like may be formed on the substrate 105, but is not limited thereto.

The second conductivity type semiconductor layer 112 of the first concentration is formed of an n type semiconductor layer to which an n type dopant is added as a second conductivity type dopant, and the first conductivity type semiconductor layer 116 is of a first conductivity type. It may be formed of a p-type semiconductor layer to which a p-type dopant is added as a dopant. In addition, the second conductivity-type semiconductor layer 112 of the first concentration may be formed of a p-type semiconductor layer, and the first conductivity-type semiconductor layer 116 may be formed of an n-type semiconductor layer.

For example, the second conductivity type semiconductor layer 112 of the first concentration is an n conductivity type semiconductor layer, and the concentration may be about 10 ¹⁷ to less than 10 ¹⁸ (cm ⁻³ ), but is not limited thereto.

The second conductivity type semiconductor layer 112 of the first concentration may include, for example, an n-type semiconductor layer. A second conductive semiconductor layer 112 of the first concentration is a composition formula of _{In x Al y Ga 1 -x- y} N (0≤x≤1, 0≤y≤1, 0≤x + y≤1) It can be formed of a semiconductor material having. The second conductivity-type semiconductor layer 112 of the first concentration may be selected from, for example, InAlGaN, GaN, AlGaN, AlInN, InGaN, AlN, InN, and the like, and n, such as Si, Ge, Sn, Se, Te Type dopants may be doped.

The active layer 114 includes electrons (or holes) injected through the second conductivity type semiconductor layer 112 and holes (or electrons) injected through the first conductivity type semiconductor layer 116. It is a layer that meets each other and emits light due to a band gap difference of an energy band according to a material forming the active layer 12a.

The active layer 114 may be formed of any one of a single well structure, a multiple well structure, a quantum dot structure, or a quantum line structure, but is not limited thereto.

The active layer 114 may be formed of a semiconductor material having a compositional formula of _{In x Al y Ga 1 -x- y} N (0≤x≤1, 0≤y≤1, 0≤x + y≤1).

When the active layer 114 is formed of the multi-well structure, the active layer 114 may be formed by stacking a plurality of well layers and a plurality of barrier layers, for example, in a period of an InGaN well layer / GaN barrier layer. Can be formed.

The first conductivity type semiconductor layer 116 may be implemented with, for example, a p-type semiconductor layer. The first conductive semiconductor layer 116 is a semiconductor material having a compositional formula of _{In x Al y Ga 1 -x- y} N (0≤x≤1, 0≤y≤1, 0≤x + y≤1) Can be formed.

The first conductive semiconductor layer 116 may be selected from, for example, InAlGaN, GaN, AlGaN, InGaN, AlInN, AlN, InN, and the like, and may be doped with p-type dopants such as Mg, Zn, Ca, Sr, and Ba. Can be.

The second conductivity-type semiconductor layer 112 at the first concentration may include a p-type semiconductor layer, and the first conductivity-type semiconductor layer 116 may include an n-type semiconductor layer.

In addition, an n-type or p-type conductive semiconductor layer (not shown) may be further formed on the first conductive semiconductor layer 116. Accordingly, the light emitting structure 110 may be formed of np, pn, npn, It may have at least one of the pnp junction structure.

Next, as shown in FIG. 4, the channel layer 140, the ohmic contact pattern 152, and the reflective layer 154 may be formed on the light emitting structure 110.

For example, the channel layer 140 may include at least one of Si0 ₂ , Si _x O _y , Si ₃ N ₄ , Si _x N _y , SiO _x N _y , Al ₂ O ₃ , TiO ₂ , AlN, and the like. Can be selected and formed.

In example embodiments, the ohmic contact pattern 152 may be disposed between the reflective layer 154 and the first conductive semiconductor layer 116.

The ohmic contact pattern 152 may be formed to be in ohmic contact with the light emitting structure 110. For example, the ohmic contact pattern 152 may be in contact with the first conductivity type semiconductor layer 116.

 The reflective layer 154 may be electrically connected to the first conductivity type semiconductor layer 116.

The ohmic contact pattern 152 may be formed of, for example, a transparent conductive oxide layer. The ohmic contact pattern 152 includes, for example, indium tin oxide (ITO), indium zinc oxide (IZO), aluminum zinc oxide (AZO), aluminum gallium zinc oxide (AGZO), indium zinc tin oxide (IZTO), and inaz Aluminum Zinc Oxide (IGZO), Indium Gallium Zinc Oxide (IGZO), Indium Gallium Tin Oxide (IGTO), Antimony Tin Oxide (ATO), Gallium Zinc Oxide (GZO), IZON (IZO Nitride), ZnO, IrOx, RuOx, NiO, Pt It may be formed of at least one material selected from Ag, Ti.

The reflective layer 154 may be formed of a material having a high reflectance. For example, the reflective layer 154 may be formed of a metal or an alloy including at least one of Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Cu, Au, and Hf.

In addition, the reflective layer 154 may be formed of indium-tin-oxide (ITO), indium-zinc-oxide (IZO), indium-zinc-tin-oxide (IZTO), and indium-aluminum-zinc- (AZO). Light-transmitting materials such as Oxide), Indium-Gallium-Zinc-Oxide (IGZO), Indium-Gallium-Tin-Oxide (IGTO), Aluminum-Zinc-Oxide (AZO), and Antimony-Tin-Oxide (ATO) It can be formed in multiple layers.

For example, in an embodiment, the reflective layer 154 may include at least one of Ag, Al, Ag-Pd-Cu alloy, or Ag-Cu alloy. For example, the reflective layer 154 may be formed by alternately forming an Ag layer and a Ni layer, and may include a Ni / Ag / Ni, Ti layer, or Pt layer.

Subsequently, a metal layer (not shown), a bonding layer 156, a support member 158, and a temporary substrate 159 may be formed on the reflective layer 154.

In example embodiments, the ohmic contact pattern 152, the reflective layer 154, the bonding layer 156, and the support member 158 may be referred to as a first electrode layer 150.

The metal layer may include at least one of Au, Cu, Ni, Ti, Ti-W, Cr, W, Pt, V, Fe, and Mo material. The metal layer may also function as a diffusion barrier layer.

The metal layer may function to prevent a material included in the bonding layer 156 from diffusing toward the reflective layer 154 in a process in which the bonding layer 156 is provided.

The bonding layer 156 includes a barrier metal or a bonding metal, and for example, at least one of Ti, Au, Sn, Ni, Cr, Ga, In, Bi, Cu, Ag, Nb, Pd, or Ta. It may include.

The support member 158 may support the light emitting structure 110 according to the embodiment and perform a heat radiation function. The bonding layer 156 may be implemented as a seed layer.

The support member 158 may be formed of, for example, a semiconductor substrate in which Ti, Cr, Ni, Al, Pt, Au, W, Cu, Mo, Cu-W or impurities are implanted (eg, Si, Ge, GaN, GaAs, ZnO, SiC, SiGe and the like). In addition, the support member 158 may be formed of an insulating material.

The temporary substrate 159 may be formed on the support member 158. The temporary substrate 159 may be formed of at least one of a metal material, a semiconductor material, or an insulating material.

Next, as shown in FIG. 5, the substrate 105 may be removed from the light emitting structure 110. For example, the substrate 105 may be removed by a laser lift off (LLO) process. The laser lift-off step LLO is a step of peeling off the substrate 105 by irradiating a laser onto the lower surface of the substrate 105.

Next, as shown in FIG. 6, the temporary substrate 159 may be removed by etching, an isolation etching may be performed to etch the side surface of the light emitting structure 110, and a portion of the channel layer 140 may be exposed. Will be.

The isolation etching may be performed by dry etching such as, for example, an inductively coupled plasma (ICP), but is not limited thereto.

Next, as shown in FIG. 7, the second conductivity-type semiconductor layer 118 having a second concentration higher than the first concentration is formed on the second conductivity-type semiconductor layer 112 having the first concentration, and the second concentration. The transparent electrode layer 120 may be formed on the second conductive semiconductor layer 118.

The transparent electrode layer 120 may be formed of indium tin oxide (ITO), indium zinc oxide (IZO), indium zinc tin oxide (IZTO), indium aluminum zinc oxide (IAZO), indium gallium zinc oxide (IGZO), or indium gallium tin (IGTO). oxide), aluminum zinc oxide (AZO), antimony tin oxide (ATO), gallium zinc oxide (GZO), IZO (IZO Nitride), AGZO (Al-Ga ZnO), IGZO (In-Ga ZnO), ZnO, IrOx, RuOx, NiO, RuOx / ITO, Ni / IrOx / Au, and Ni / IrOx / Au / ITO, Ag, Ni, Cr, Ti, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Au, Hf It may be formed to include at least one of, and is not limited to these materials.

The transparent electrode layer 120 may be formed of 1 nm to 20 nm, but is not limited thereto.

 According to the embodiment, the second conductive semiconductor layer 118 having a second concentration higher than the first concentration is formed on the surface of the second conductive semiconductor layer 112 having the first concentration, thereby forming the second conductive semiconductor having the second concentration. The resistance can be reduced by inducing electron tunneling with the layer 118 and the transparent electrode layer 120 formed thereon.

For example, according to the embodiment, a second conductive semiconductor layer 118 having a second concentration is formed on the surface of the second conductive semiconductor layer 112 having a first concentration by annealing or ion implantation, and then a transparent electrode layer ( 120), the resistance decreases according to the effect of electron tunneling, so that the transparent electrode can be used as the electrode on the n-type GaN.

In an embodiment, the concentration of the second conductivity-type semiconductor layer 118 at the second concentration is set higher than the concentration of the second conductivity-type semiconductor layer 112 at the first concentration, and the second concentration is higher than the first concentration. The concentration may be 10 to 100 times higher, and the difference in concentration may induce electron tunneling with the second conductive semiconductor layer 118 having the second concentration, the transparent electrode layer formed thereon, and the like.

For example, the second conductivity type semiconductor layer 112 of the first concentration is an n conductivity type semiconductor layer, the concentration may be less than about 10 ¹⁷ to 10 ¹⁸ (cm ⁻³ ), and the second conductivity type of the second concentration The semiconductor layer 118 is an n conductive semiconductor layer, but may be about 10 ¹⁸ to 10 ²⁰ (cm ⁻³ ) or less, but is not limited thereto.

The second conductivity-type semiconductor layer 118 of the second concentration may be formed to a thickness of about 1 nm to 10 nm. When the second conductivity type semiconductor layer 118 of the second concentration is more than 10nm, the thickness is too thick, it is difficult to occur the tunneling effect, if the thickness is less than 1nm it may be difficult to substantially contribute to tunneling.

According to the embodiment, the organic conductive layer of the second conductive semiconductor layer 118 having a high concentration of the second concentration can be organically combined with the transparent electrode, so that the transparent electrode can be applied to the vertical light emitting device, and can be formed on the entire surface of the upper surface of the chip. Therefore, current spreading can be performed efficiently.

Further, according to the embodiment, the tunneling effect between the transparent electrode and the second conductive semiconductor layer 118 having a high concentration of second concentration forms a transparent electrode on the upper surface of the vertical light emitting device, thereby increasing the current injection efficiency. The effect is to lower the voltage.

In addition, according to the embodiment, the transparent electrode capable of tunneling with the second conductivity-type semiconductor layer having the second concentration is introduced to the front surface of the vertical light emitting device so that the size of the pad electrode can be reduced. By minimizing absorption of emitted light, light extraction efficiency may be increased.

On the other hand, in the prior art to increase the current injection efficiency and to form a so-called branch electrode for current diffusion, the branch electrode has a problem of absorbing light to reduce the light extraction efficiency, according to the embodiment the second conductivity of the second concentration Since a transparent electrode capable of tunneling with the semiconductor type semiconductor layer is introduced on the front surface of the horizontal light emitting device, a separate branch electrode is unnecessary, thereby reducing the process cost and time, and increasing light extraction efficiency because there is no light absorbed by the branch electrode. Can be.

In addition, according to the prior art, in the vertical light emitting device, a current spreading layer is formed at the bottom of the pad electrode to spread the current, but according to the embodiment, since the current spreading is performed smoothly, the current spreading layer can be omitted. Process costs can be reduced.

Next, as shown in FIG. 8, a pad electrode 160 may be formed on the transparent electrode layer 120.

The pad electrode 160 may be formed of a conductive material. For example, the pad electrode 160 may include at least one of Cr, V, W, Ti, Zn, Ni, Cu, Al, Au.

9 is a sectional view of a light emitting element 102 according to the second embodiment.

The second embodiment can employ the technical features of the first embodiment.

In example embodiments, the second conductivity-type semiconductor layer 112 of the first concentration includes a first uneven pattern P1 on an upper surface thereof, and the second conductivity-type semiconductor layer 118b of the second concentration. ) And the transparent electrode layer 120b may include a second uneven pattern P2 corresponding to the first uneven pattern P1.

Through this, according to the second embodiment, not only the absorption of light through the pad electrode 160 can be minimized, but the light extraction irregularities can be introduced into the upper surface of the light emitting device to maximize the light extraction efficiency.

Furthermore, according to the second embodiment, the area where the transparent electrode layer 120b and the second conductive semiconductor layer 118b of the second concentration are significantly increased by the uneven pattern may significantly increase the current injection efficiency, thereby maximizing the luminous flux. have.

The embodiment can provide a light emitting device, a method of manufacturing a light emitting device, a light emitting device package, and an illumination system which can increase light extraction efficiency and increase internal light emitting efficiency.

10 is a view showing a light emitting device package 200 to which the light emitting device according to the embodiment is applied.

Referring to FIG. 10, the light emitting device package according to the embodiment may include a body 205, a first lead electrode 213 and a second lead electrode 214 disposed on the body 205, and the body 205. The light emitting device 100 may be provided to be electrically connected to the first lead electrode 213 and the second lead electrode 214, and the molding member 240 may surround the light emitting device 100. .

The body 205 may include a silicon material, a synthetic resin material, or a metal material, and an inclined surface may be formed around the light emitting device 100.

The first lead electrode 213 and the second lead electrode 214 are electrically separated from each other, and provide power to the light emitting device 100. In addition, the first lead electrode 213 and the second lead electrode 214 may reflect light generated by the light emitting device 100 to increase light efficiency, and heat generated by the light emitting device 100. It may also play a role in discharging it to the outside.

The light emitting device 100 may be disposed on the body 205 or on the first lead electrode 213 or the second lead electrode 214.

The light emitting device 100 may be electrically connected to the first lead electrode 213 and the second lead electrode 214 by any one of a wire method, a flip chip method, and a die bonding method.

In the exemplary embodiment, the light emitting device 100 may be mounted on the second lead electrode 214 and may be connected to the first lead electrode 213 by the wire 250, but the embodiment is not limited thereto.

The molding member 240 may surround the light emitting device 100 to protect the light emitting device 100. In addition, the molding member 240 may include a phosphor 232 to change the wavelength of the light emitted from the light emitting device 100.

A plurality of light emitting devices or light emitting device packages according to the embodiment may be arranged on a substrate, and an optical member such as a lens, a light guide plate, a prism sheet, a diffusion sheet, and the like may be disposed on the light path of the light emitting device package. The light emitting device package, the substrate, and the optical member may function as a light unit. The light unit may be implemented in a top view or a side view type, and may be provided to a display device such as a portable terminal and a notebook computer, or may be variously applied to an illumination device and a pointing device. Yet another embodiment may be implemented as a lighting device including the light emitting device or the light emitting device package described in the above embodiments. For example, the lighting device may include a lamp, a street lamp, a sign, a headlamp.

11 is an exploded perspective view of the lighting apparatus according to the embodiment.

Referring to FIG. 11, the lighting apparatus according to the embodiment may include a cover 2100, a light source module 2200, a heat radiator 2400, a power supply unit 2600, an inner case 2700, and a socket 2800. Can be. In addition, the lighting apparatus according to the embodiment may further include any one or more of the member 2300 and the holder 2500. The light source module 2200 may include a light emitting device package according to an embodiment.

For example, the cover 2100 may have a bulb or hemisphere shape, and may be provided in a hollow shape and a part of which is opened. The cover 2100 may be optically coupled to the light source module 2200. For example, the cover 2100 may diffuse, scatter or excite the light provided from the light source module 2200. The cover 2100 may be a kind of optical member. The cover 2100 may be combined with the radiator 2400. The cover 2100 may have a coupling part coupled to the heat sink 2400.

An inner surface of the cover 2100 may be coated with a milky paint. The milky paint may include a diffuser that diffuses light. The surface roughness of the inner surface of the cover 2100 may be greater than the surface roughness of the outer surface of the cover 2100. This is for the light from the light source module 2200 to be sufficiently scattered and diffused and emitted to the outside.

The cover 2100 may be made of glass, plastic, polypropylene (PP), polyethylene (PE), polycarbonate (PC), or the like. Here, polycarbonate is excellent in light resistance, heat resistance, and strength. The cover 2100 may be transparent or opaque so that the light source module 2200 is visible from the outside. The cover 2100 may be formed through blow molding.

The light source module 2200 may be disposed on one surface of the heat sink 2400. Therefore, heat from the light source module 2200 is conducted to the heat sink 2400. The light source module 2200 may include a light source unit 2210, a connection plate 2230, and a connector 2250.

The member 2300 is disposed on an upper surface of the heat dissipator 2400 and has a plurality of light source parts 2210 and guide grooves 2310 into which the connector 2250 is inserted. The guide groove 2310 corresponds to the substrate and the connector 2250 of the light source unit 2210.

The surface of the member 2300 may be coated or coated with a light reflective material. For example, the surface of the member 2300 may be coated or coated with a white paint. The member 2300 is reflected on the inner surface of the cover 2100 to reflect the light returned to the light source module 2200 side again toward the cover 2100. Therefore, it is possible to improve the light efficiency of the lighting apparatus according to the embodiment.

The member 2300 may be made of, for example, an insulating material. The connection plate 2230 of the light source module 2200 may include an electrically conductive material. Therefore, electrical contact may be made between the radiator 2400 and the connection plate 2230. The member 2300 may be made of an insulating material to block an electrical short between the connection plate 2230 and the radiator 2400. The radiator 2400 receives heat from the light source module 2200 and heat from the power supply unit 2600 to radiate heat.

The holder 2500 may block the accommodating groove 2719 of the insulating portion 2710 of the inner case 2700. Therefore, the power supply unit 2600 accommodated in the insulating unit 2710 of the inner case 2700 is sealed. The holder 2500 has a guide protrusion 2510. The guide protrusion 2510 has a hole through which the protrusion 2610 of the power supply unit 2600 passes.

The power supply unit 2600 processes or converts an electrical signal provided from the outside to provide the light source module 2200. The power supply unit 2600 is accommodated in the accommodating groove 2725 of the inner case 2700, and is sealed in the inner case 2700 by the holder 2500.

The power supply unit 2600 may include a protrusion 2610, a guide unit 2630, a base 2650, and an extension unit 2670.

The guide part 2630 has a shape protruding outward from one side of the base 2650. The guide part 2630 may be inserted into the holder 2500. A plurality of parts may be disposed on one surface of the base 2650. The plurality of components may include, for example, a DC converter for converting AC power provided from an external power source into DC power, a driving chip for controlling the driving of the light source module 2200, and an ESD for protecting the light source module 2200. (ElectroStatic discharge) protection element and the like, but may not be limited thereto.

The extension part 2670 has a shape protruding outward from the other side of the base 2650. The extension part 2670 is inserted into the connection part 2750 of the inner case 2700 and receives an electrical signal from the outside. For example, the extension part 2670 may be provided equal to or smaller than the width of the connection part 2750 of the inner case 2700. Each end of the "+ wire" and the "-wire" may be electrically connected to the extension 2670, and the other end of the "+ wire" and the "-wire" may be electrically connected to the socket 2800. .

The inner case 2700 may include a molding part together with the power supply part 2600 therein. The molding part is a part where the molding liquid is hardened, so that the power supply part 2600 can be fixed inside the inner case 2700.

The embodiment can provide a light emitting device, a method of manufacturing a light emitting device, a light emitting device package, and an illumination system which can increase light extraction efficiency and increase internal light emitting efficiency.

Features, structures, effects, etc. described in the above embodiments are included in at least one embodiment, but are not necessarily limited to one embodiment. Furthermore, the features, structures, effects, and the like illustrated in the embodiments may be combined or modified with respect to other embodiments by those skilled in the art to which the embodiments belong. Therefore, it should be interpreted that the contents related to such combinations and modifications are included in the scope of the embodiments.

Although described above with reference to the embodiment, this is merely an example, not to limit the embodiment, those skilled in the art to which the embodiment belongs to various not illustrated above in the range without departing from the essential characteristics of the embodiment It will be appreciated that modifications and applications of the branches are possible. For example, each component specifically shown in the embodiment can be modified. And differences relating to these modifications and applications will have to be construed as being included in the scope of the embodiments set forth in the appended claims.

The first conductivity type semiconductor layer 116, the active layer 114,
The second conductivity type semiconductor layer 112 at a first concentration,
A second conductivity type semiconductor layer 118 and a transparent electrode layer 120 having a second concentration;
First uneven pattern P1 and second uneven pattern P2

Claims (8)

A first conductivity type semiconductor layer disposed on the first electrode layer;
An active layer on the first conductive semiconductor layer;
A second conductivity type semiconductor layer having a first concentration on the active layer;
A second conductivity type semiconductor layer having a second concentration higher than the first concentration on the second conductivity type semiconductor layer having the first concentration;
A transparent electrode layer on the second conductivity type semiconductor layer having the second concentration;
A pad electrode disposed on the transparent electrode layer; And
And a channel layer disposed between the first electrode layer and the first conductive semiconductor layer.
The first electrode layer may include an ohmic contact pattern disposed under the first conductive semiconductor layer. And a reflective layer disposed under the ohmic contact pattern.
The transparent electrode layer may include a first uneven pattern disposed at the center of the upper surface of the transparent electrode layer; And a first flat surface disposed in an upper edge region of the transparent electrode layer.
The pad electrode is spaced apart from the first uneven pattern and is disposed on the first flat surface overlapping a portion of the active layer and a portion of the channel layer in a vertical direction.
The ohmic contact pattern extends in a region overlapping with the first uneven pattern in a vertical direction and extends in a region overlapping with the first flat surface and extends from an upper surface of the reflective layer to a lower surface of the channel layer.
The channel layer extends in a region overlapping with the first flat surface in a vertical direction in a region overlapping with the first uneven pattern in a vertical direction,
The reflective layer has a horizontal width smaller than the ohmic contact pattern and is disposed in a region overlapping the ohmic contact pattern in a vertical direction. According to claim 1,
The second concentration is
A light emitting device having a concentration of 10 to 100 times higher than the first concentration. The method of claim 2,
The first concentration is less than 10 ¹⁷ to 10 ¹⁸ (cm ^-3 ),
The second concentration is 10 ¹⁸ to 10 ²⁰ (cm ^-3 ) or less. According to claim 1,
The second conductivity type semiconductor layer of the second concentration
A light emitting device having a thickness of 1 nm to 10 nm. According to claim 1,
The transparent electrode layer
A light emitting device formed on the entire upper surface of the second conductivity type semiconductor layer of the second concentration. The method of claim 5,
The transparent electrode layer has a thickness of 1nm to 20nm light emitting device. According to claim 1,
The second conductivity type semiconductor layer having the first concentration includes a second uneven pattern corresponding to the first uneven pattern on an upper surface thereof. An illumination system comprising a light emitting unit comprising the light emitting element according to any one of claims 1 to 7.

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