KR102109109B1 - Light emitting device and lighting system - Google Patents

Abstract

Embodiments relate to a light emitting device, a method of manufacturing the light emitting device, a light emitting device package, and a lighting system.
The light emitting device according to the embodiment may include a first conductive semiconductor layer; An In _x Al _y Ga _{1 -x- y} N / GaN layer on the first conductivity type semiconductor layer 11 (however, 0 <x <1, 0 <y <1) 17; An active layer 12 on the In _x Al _y Ga _{1 -x- y} N / GaN layer 17; And the active layer 12 onto the second conductive type semiconductor layer 13; including, and the active layer 12 is In _p Ga _{1 - p} N well layer (where, 0 <p <1) ( 12a) and GaN A barrier layer 12b may be included.

Description

LIGHT EMITTING DEVICE AND LIGHTING SYSTEM

Embodiments relate to a light emitting device, a method of manufacturing the light emitting device, a light emitting device package, and a lighting system.

Light Emitting Device is a pn junction diode that converts electrical energy into light energy. It can be made of compound semiconductors such as group III and group V on the periodic table and realizes various colors by controlling the composition ratio of compound semiconductors. It is possible.

When the forward voltage is applied, the n-layer electrons and p-layer holes are combined to emit energy corresponding to the band gap energy of the conduction band and the valance band. Is mainly emitted in the form of heat or light, and when emitted in the form of light, becomes a light emitting device.

For example, nitride semiconductors have attracted great attention in the field of optical devices and high power electronic devices due to their high thermal stability and wide band gap energy. In particular, blue light emitting devices, green light emitting devices, and ultraviolet light (UV) light emitting devices using nitride semiconductors have been commercialized and widely used.

In the conventional InGaN / GaN structure epitaxial layer of a conventional light emitting device, lattice mismatch occurs at the interface of two thin films due to the difference in the lattice constant of InGaN and GaN, thereby polarizing the interface. Polarization occurs, and a piezoelectric field across the epistructure.

In the presence of such a piezo field, high current application to the epi structure severely bends the band-gap, resulting in a low potential barrier at the interface of the two thin films, thereby constraining the carrier of the injected electrons. The (Carrier Confinement) function is deteriorated and the electron overflow phenomenon is promoted, so that the number of non-radiative carriers increases and the luminous efficiency decreases rapidly.

In addition, if the current density (Current Density) is gradually increased in the epi structure under the condition that the electron overflow exists, the band gap is bent, thereby causing the electron overflow phenomenon to gradually increase even if the InGaN well with the same In content is included. .

The overflow of electrons generated in the well having the low potential barrier layer can reduce the number of light (Photon, hv) generated by MQW in a large number.

An embodiment is to provide a light emitting device, a method of manufacturing a light emitting device, a light emitting device package, and a lighting system capable of increasing light efficiency by preventing an electron overflow phenomenon in an epi structure.

The light emitting device according to the embodiment includes a first conductive semiconductor layer 11; An In _x Al _y Ga _{1 -x- y} N / GaN layer on the first conductivity type semiconductor layer 11 (however, 0 <x <1, 0 <y <1) 17; An active layer 12 on the In _x Al _y Ga _{1 -x- y} N / GaN layer 17; And the active layer 12 onto the second conductive type semiconductor layer 13; including, and the active layer 12 is In _p Ga _{1 - p} N well layer (where, 0 <p <1) ( 12a) and GaN A barrier layer 12b may be included.

In the In _x Al _y Ga _{1 -x- y} N / GaN layer 17, the relationship between the composition (x) of In and the composition (p) of In of the well layer 12a is in the range of 0.75≤x / p≤1.0. Can be.

In the In _x Al _y Ga _{1 -x- y} N / GaN layer (however, the composition range (y) of Al in 0 <x <1, 0 <y <1) (17) may be 0 <y≤0.02. .

In addition, the lighting device according to the embodiment may include a light emitting module having the light emitting element.

According to the light emitting device, the manufacturing method of the light emitting device, the light emitting device package and the lighting system according to the embodiment, it is possible to prevent an electron overflow phenomenon in an epi structure, thereby increasing light efficiency.

1 is a cross-sectional view of a light emitting device according to an embodiment.
Figure 2 is an energy band gap diagram of the light emitting device according to the embodiment.
Figure 3 is a first illustration of the internal quantum efficiency of the light emitting device according to the embodiment.
4 is a second illustration of the internal quantum efficiency of the light emitting device according to the embodiment.
5 is a third illustration of the internal quantum efficiency of the light emitting device according to the embodiment.
6 to 8 are sectional views showing the manufacturing method of the light emitting device according to the embodiment.
9 is a cross-sectional view of a light emitting device according to another embodiment.
10 is a sectional view of a light emitting device package according to an embodiment.
11 is a view of a lighting device according to an embodiment.

In the description of the embodiments, each layer (film), region, pattern or structure is "on / over" or "under" the substrate, each layer (film), region, pad or pattern. In the case described as being formed in, "on / over" and "under" include both "directly" or "indirectly" formed through another layer. do. In addition, the criteria for the top / top or bottom of each layer will be described based on the drawings.

In the drawings, the thickness or size of each layer is exaggerated, omitted, or schematically illustrated for convenience and clarity. Also, the size of each component does not entirely reflect the actual size.

(Example)

1 is a cross-sectional view of a light emitting device 100 according to an embodiment.

The light emitting device 100 according to the embodiment includes a first conductivity type semiconductor layer 11 and an In _x Al _y Ga _{1 -x- y} N / GaN layer on the first conductivity type semiconductor layer 11 (however, 0 <x <1, 0 <y <1) (17), the In _x Al _y Ga _1-xy N / GaN layer 17 on the active layer 12 and the second conductive layer on the active layer 12 Type semiconductor layer 13 may be included.

2 is an energy band gap diagram of a light emitting device according to an embodiment.

In an embodiment, the In _x Al _y Ga _{1 -x- y} N / GaN layer 17 may include an In _x Al _y Ga _{1 -x- y} N (17a) / GaN (17b) superlattice structure. It is not limited.

In an embodiment, the active layer 12 is In _p Ga _{1 - p} N well layer (where, 0 <p <1) ( 12a) and may include a GaN barrier layer (12b), the In _x Al _y Ga _{1 The} relationship between the composition (x) of In in the x- _y N / GaN layer 17 and the composition (p) of In in the well layer 12a may be in the range of 0.75≤x / p≤1.0.

 3 is a first example of the internal quantum efficiency of the light emitting device and the internal quantum efficiency (Ref) of the comparative example.

In Figure 3, the embodiment of _{In x Al y Ga 1 -x- y} N / GaN layer 17 but holding for example in the case of _{In 0 .13 Al 0 .02 Ga 0} .85 N / GaN, this embodiment It is not limited.

In general, Piezoelectric Fields hanging across the Epi Structure cause high current driving to severely bend the bandgap and deepen the electron overflow phenomenon. The number of Photon (hv) generated in the active layer can be reduced.

In an embodiment, an In _x Al _y Ga _{1 -x- y} N / GaN layer 17 may be disposed under the active layer 12 to implement a Piezoelectric Fields Reduction Structure (PFRS) to improve the piezo field phenomenon.

In an embodiment, the role of the In _x Al _y Ga _{1 -x- y} N / GaN layer 17 superlattice structure disposed under the active layer 12 is important in order to implement PFRS (Piezoelectric Fields Reduction Structure).

The electron injected into the active layer can enhance the carrier confinement function according to the In / Al composition in the In _x Al _y Ga _{1 -x- y} N / GaN structure, and also the carrier transfer function (Carrier) By strengthening the transfer function, the number of excited photons (hv) can be increased to increase emission intensity and internal quantum efficiency on the wavelength / energy spectrum.

For example, according to an embodiment, in the In _x Al _y Ga _{1 -x- y} N / GaN layer 17, In is composed of about 13% and Al of 2% to form a bandgap energy. In the main surface, a potential barrier occurs at the interface of two thin films due to the difference in band gap energy between InAlGaN and GaN in the actual epitaxial layer, and the piezoelectric field exists across the n / p-type. ) To help reduce the carrier confinement of injected electrons, increase the probability of carriers in a specific well and promote radiative recombination, improving luminous efficiency Can be.

4 is a second exemplary diagram of internal quantum efficiency of a light emitting device according to an embodiment, and is an Al level (Level) optimization experiment result in the comparative example (Ref), the first embodiment (E1), and the second embodiment (E2). .

In an embodiment, the composition range (y) of Al in the In _x Al _y Ga _{1 -x- y} N / GaN layer (where 0 <x <1, 0 <y <1) 17 is 0 <y≤0.02 Can be

In an embodiment, in order to improve an electron overflow phenomenon or non-radiative recombination, an AlAl composition having a low concentration of 2% or less is reduced to reduce InAlGaN / GaN polarity. By designing the In _x Al _y Ga _{1 -x- y} N / GaN layer 17, carrier restraining function of injected electrons by alleviating band bending phenomenon in high current driving ( Carrier Confinement Function).

5 is a third example of internal quantum efficiency of a light emitting device according to an embodiment, and is a result of an In level (Level) optimization experiment in the comparative example (Ref), the first embodiment (E1), and the third embodiment (E3). .

In an embodiment, the relationship between the composition (x) of In in the In _x Al _y Ga _{1 -x- y} N / GaN layer 17 and the composition (p) of In in the well layer 12a is 0.75≤x / p ≤1.0.

For example, the composition range (x) of In in the In _x Al _y Ga _{1 -x- y} N / GaN layer (where 0 <x <1, 0 <y <1) 17 is 0 <x ≤ 0.13.

In the embodiment, the InAlGaN / GaN polarity is reduced, and the concentration of the In (x) of the well layer 12a is designed to be higher than the In concentration of the conventional strain mitigation layer to reduce the difference in the lattice constant with the active layer. Designed to be 75% to 100% of the band bending phenomenon can be alleviated and the carrier transfer function can be increased.

In an embodiment, the In _x Al _y Ga _{1 -x- y} N / GaN layer 17 may be an un-doped layer.

Or in an embodiment, the In _x Al _y Ga _{1 -x- y} N / GaN layer 17 may be a layer doped with a first conductivity type, and may have physical properties different from those of the active layer by providing a bulk resistance. have.

According to the light emitting device, the manufacturing method of the light emitting device, the light emitting device package and the lighting system according to the embodiment, it is possible to increase the light efficiency by preventing an electron overflow phenomenon in the epi structure.

Hereinafter, a method of manufacturing a light emitting device according to an embodiment will be described with reference to FIGS. 6 to 8.

According to the method of manufacturing the light emitting device according to the embodiment, as shown in FIG. 6, the first conductive semiconductor layer 11, the active layer 12, and the second conductive semiconductor layer 13 may be formed on the substrate 5. . The first conductivity type semiconductor layer 11, the active layer 12, and the second conductivity type semiconductor layer 13 may be defined as a light emitting structure 10.

The substrate 5 may be formed of, for example, at least one of a sapphire substrate (Al ₂ O ₃ ), SiC, GaAs, GaN, ZnO, Si, GaP, InP, Ge, but is not limited thereto. A buffer layer 14 may be further formed between the first conductivity type semiconductor layer 11 and the substrate 5.

For example, the first conductivity type semiconductor layer 11 is formed of an n type semiconductor layer to which an n type dopant is added as a first conductivity type dopant, and the second conductivity type semiconductor layer 13 is a second conductivity type dopant. As may be formed as a p-type semiconductor layer is added p-type dopant. Also, the first conductivity type semiconductor layer 11 may be formed of a p-type semiconductor layer, and the second conductivity type semiconductor layer 13 may be formed of an n-type semiconductor layer.

The first conductive semiconductor layer 11 may include, for example, an n-type semiconductor layer. The first conductive semiconductor layer 11 is a semiconductor material having a composition formula of In _x Al _y Ga _{1 -x- y} N (0≤x≤1, 0≤y≤1, 0≤x + y≤1) Can be formed. The first conductive semiconductor layer 11 may be selected from, for example, InAlGaN, GaN, AlGaN, AlInN, InGaN, AlN, InN, and n-type dopants such as Si, Ge, Sn, Se, and Te doped. Can be.

In the active layer 12, electrons (or holes) injected through the first conductivity type semiconductor layer 11 and holes (or electrons) injected through the second conductivity type semiconductor layer 13 meet each other, and the It is a layer that emits light due to a difference in a band gap of an energy band according to a forming material of the active layer 12.

The second conductivity type semiconductor layer 13 may be implemented, for example, as a p-type semiconductor layer. The second conductivity type semiconductor layer 13 is a semiconductor material having a composition formula of In _x Al _y Ga _{1 -x- y} N (0≤x≤1, 0≤y≤1, 0≤x + y≤1) Can be formed. The second conductivity type semiconductor layer 13 may be selected from, for example, InAlGaN, GaN, AlGaN, InGaN, AlInN, AlN, InN, and p-type dopants such as Mg, Zn, Ca, Sr, and Ba doped. Can be.

Meanwhile, the first conductivity type semiconductor layer 11 may include a p-type semiconductor layer, and the second conductivity type semiconductor layer 13 may include an n-type semiconductor layer. In addition, a semiconductor layer including an n-type or p-type semiconductor layer may be further formed on the second conductivity-type semiconductor layer 13, and accordingly, the light emitting structure 10 is bonded to np, pn, npn, or pnp. It may have at least one of the structures. Further, doping concentrations of impurities in the first conductivity type semiconductor layer 11 and the second conductivity type semiconductor layer 13 may be uniformly or non-uniformly. That is, the structure of the light emitting structure 10 may be variously formed, but is not limited thereto.

In addition, a first conductivity type InGaN / GaN superlattice structure or an InGaN / InGaN superlattice structure may be formed between the first conductivity type semiconductor layer 11 and the active layer 12. In addition, an AlGaN layer of a second conductivity type may be formed between the second conductivity type semiconductor layer 13 and the active layer 12.

2 illustrates the light emitting device according to the embodiment in more detail with reference to a band gap diagram of the light emitting device according to the embodiment.

2 is an energy band gap diagram of a light emitting device according to an embodiment.

In an embodiment, the In _x Al _y Ga _{1 -x- y} N / GaN layer 17 may include a superlattice structure, but is not limited thereto.

In an embodiment, the active layer 12 is In _p Ga _{1 - p} N well layer (where, 0 <p <1) ( 12a) and may include a GaN barrier layer (12b), the In _x Al _y Ga _{1 The} relationship between the composition (x) of In in the x- _y N / GaN layer 17 and the composition (p) of In in the well layer 12a may be in the range of 0.75≤x / p≤1.0.

In an embodiment, the In _x Al _y Ga _{1 -xy} N / GaN layer 17 may be disposed under the active layer 12 to improve the piezo field phenomenon.

According to an embodiment, in the In _x Al _y Ga _{1 -x- y} N / GaN layer 17, when In is composed of about 13% and Al of 2% to form a bandgap energy, in the actual epi layer, Due to the difference in band gap energy between InAlGaN and GaN, a potential barrier occurs at the interface of the two thin films, and the piezo field is reduced to help the carriers of the injected electrons to increase the probability of carriers in a specific well and promote luminescence recombination, thereby emitting light. Efficiency can be improved.

Next, as shown in FIG. 7, a portion of the first conductive semiconductor layer 11 may be exposed by etching the light emitting structure 10. At this time, the etching may be performed by wet etching or dry etching.

Thereafter, a channel layer 30, an ohmic contact pattern 15, and a reflective layer 17 may be formed on the light emitting structure 10.

For example, the channel layer 30 is at least one of the group consisting of Si0 ₂ , Si _x O _y , Si ₃ N ₄ , Si _x N _y , SiO _x N _y , Al ₂ O ₃ , TiO ₂ , AlN, etc. Can be selected and formed.

The ohmic contact pattern 15 may be disposed between the reflective layer 17 and the second conductivity-type semiconductor layer 13. The ohmic contact pattern 15 may be disposed in contact with the second conductivity type semiconductor layer 13.

The ohmic contact pattern 15 may be formed to be in ohmic contact with the light emitting structure 10. The reflective layer 17 may be electrically connected to the second conductivity type semiconductor layer 13. The ohmic contact pattern 15 may include an area in ohmic contact with the light emitting structure 10.

The ohmic contact pattern 15 may be formed of, for example, a transparent conductive oxide film. The ohmic contact pattern 15 is, for example, ITO (Indium Tin Oxide), IZO (Indium Zinc Oxide), AZO (Aluminum Zinc Oxide), AGZO (Aluminum Gallium Zinc Oxide), IZTO (Indium Zinc Tin Oxide), IAZO (Indium Aluminum Zinc Oxide (IGZO), Indium Gallium Zinc Oxide (IGZO), Indium Gallium Tin Oxide (IGTO), Antimony Tin Oxide (ATO), Gallium Zinc Oxide (GZO), IZON (IZO Nitride), ZnO, IrOx, RuOx, NiO, Pt , Ag, Ti.

The reflective layer 17 may be formed of a material having high reflectance. For example, the reflective layer 17 may be formed of a metal or alloy including at least one of Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Cu, Au, and Hf. In addition, the reflective layer 17 is the metal or alloy and ITO (Indium-Tin-Oxide), IZO (Indium-Zinc-Oxide), IZTO (Indium-Zinc-Tin-Oxide), IAZO (Indium-Aluminum-Zinc- Oxide), IGZO (Indium-Gallium-Zinc-Oxide), IGTO (Indium-Gallium-Tin-Oxide), AZO (Aluminum-Zinc-Oxide), ATO (Antimony-Tin-Oxide), etc. It can be formed in multiple layers. For example, in the embodiment, the reflective layer 17 may include at least one of Ag, Al, Ag-Pd-Cu alloy, or Ag-Cu alloy.

For example, the reflective layer 17 may be formed of alternating Ag layer and Ni layer, and may include Ni / Ag / Ni, or Ti layer, and Pt layer. In addition, the ohmic contact pattern 15 is formed under the reflective layer 17, and at least a portion may pass through the reflective layer 17 to be in ohmic contact with the light emitting structure 10.

Subsequently, a metal layer 50, a bonding layer 60, a support member 70, and a temporary substrate 90 may be formed on the reflective layer 17.

The metal layer 50 may include at least one of Au, Cu, Ni, Ti, Ti-W, Cr, W, Pt, V, Fe, and Mo materials. The metal layer 50 may also function as a diffusion barrier layer.

According to an embodiment, the first electrode layer electrically connected to the second conductivity type semiconductor layer 13 may include at least one of a reflective layer, an ohmic contact layer, and a metal layer. According to an embodiment, the first electrode layer may include all of a reflective layer, an ohmic contact layer, and a metal layer, and may include one layer or two layers.

The metal layer 50 may function to prevent the material included in the bonding layer 60 from diffusing in the direction of the reflective layer 17 in a process in which the bonding layer 60 is provided. The second metal layer 50 may prevent a material such as tin (Sn) included in the bonding layer 60 from affecting the reflective layer 17.

The bonding layer 60 includes a barrier metal or a bonding metal, for example, at least one of Ti, Au, Sn, Ni, Cr, Ga, In, Bi, Cu, Ag, Nb, Pd or Ta It can contain. The support member 70 supports the light emitting structure 10 according to an embodiment and may perform a heat dissipation function. The bonding layer 60 may be implemented as a seed layer.

The support member 70 is, for example, Ti, Cr, Ni, Al, Pt, Au, W, Cu, Mo, Cu-W or a semiconductor substrate in which impurities are injected (eg, Si, Ge, GaN, GaAs, ZnO, SiC, SiGe, and the like). In addition, the support member 70 may be formed of an insulating material.

The temporary substrate 90 may be formed on the support member 70. The temporary substrate 90 may be formed of at least one of a metallic material, a semiconductor material, or an insulating material.

Next, as illustrated in FIG. 8, the substrate 5 is removed from the light emitting structure 10. As one example, the substrate 5 may be removed by a laser lift off (LLO) process. The laser lift-off process (LLO) is a process of irradiating a laser on the lower surface of the substrate 5 to peel the substrate 5 and the light emitting structure 10 from each other.

In addition, an isolation etching process, a pad electrode 81 forming process, a scribing process, a reflective part 40 forming process, and a temporary substrate 90 removal process may be performed. This process is an example, and the process order may be variously modified as necessary.

According to an exemplary embodiment, isolation etching is performed to etch a side surface of the light emitting structure 10 and a portion of the channel layer 30 may be exposed. The isolation etching may be performed by dry etching such as, for example, ICP (Inductively Coupled Plasma), but is not limited thereto.

Roughness (not shown) may be formed on an upper surface of the light emitting structure 10. A light extraction pattern may be provided on the top surface of the light emitting structure 10. An uneven pattern may be provided on the upper surface of the light emitting structure 10. The light extraction pattern provided on the light emitting structure 10 may be formed by a PEC (Photo Electro Chemical) etching process as an example. Accordingly, according to the embodiment, it is possible to increase the external light extraction effect.

Next, a pad electrode 81 may be formed on the light emitting structure 10.

The pad electrode 81 may be electrically connected to the first conductivity type semiconductor layer 11. Some areas of the pad electrode 81 may be in contact with the first conductivity type semiconductor layer 11. According to an embodiment, power may be applied to the light emitting structure 10 through the pad electrode 81 and the first electrode layer 87.

The pad electrode 81 may be implemented as an ohmic layer, an intermediate layer, or an upper layer. The ohmic layer may include a material selected from Cr, V, W, Ti, and Zn to implement ohmic contact. The intermediate layer may be made of a material selected from Ni, Cu, Al, and the like. The upper layer may include Au, for example. The pad electrode 81 may include at least one of Cr, V, W, Ti, Zn, Ni, Cu, Al, and Au.

Then, the scribing process is performed so that the side surfaces of the channel layer 30 and the support member 70 can be exposed. Subsequently, the reflection part 40 may be formed on the side surface of the channel layer 30 and the side surface of the support member 70. Thereafter, the temporary substrate 90 is removed, so that individual light emitting devices can be formed.

According to an embodiment, the reflection part 40 may be disposed on the channel layer 30. The reflection part 40 may be disposed in contact with the channel layer 30. The reflection part 40 may be disposed on the side surface of the support member 70. The reflection part 40 may be disposed in contact with a side surface of the support member 70. According to an embodiment, the reflective part 40 may be disposed by connecting a first area disposed on the channel layer 30 and a second area disposed on the side surface of the support member 70.

In addition, the reflective part 40 may be disposed on the side surface of the metal layer 50. The reflection part 40 may be disposed in contact with a side surface of the metal layer 50. The reflection part 40 may be disposed on the side surface of the bonding layer 60. The reflective part 40 may be disposed in contact with a side surface of the bonding layer 60. The reflection part 40 may be disposed spaced apart from the light emitting structure 10. The reflection part 40 may be disposed to be electrically insulated from the light emitting structure 10.

The reflector 40 may be made of a material having good reflectance. For example, the reflection part 40 may include at least one material among Ag, Al, and Pt. The reflector 40 may be formed to a thickness of 50 nanometers to 5000 nanometers, for example.

The reflection part 40 is to absorb the light emitted from the light emitting structure 10 is incident on the channel layer 30, the metal layer 50, the bonding layer 60, the support member 70 is absorbed Can be prevented. That is, the reflection part 40 reflects light incident from the outside to absorb and disappear light from the channel layer 30, the metal layer 50, the bonding layer 60, and the support member 70. Can be prevented.

As the reflection part 40 is disposed, the surface of the channel layer 30, the side of the metal layer 50, the side of the bonding layer 60, the side of the support member 70 is rough Even when is formed, all sides of the light emitting device according to the embodiment can be implemented smoothly. That is, since the surface of the reflective portion 40 can be smoothly formed, the side of the channel layer 30, the side of the metal layer 50, the side of the bonding layer 60, the support member in a scribing process or the like. Even when roughness or burr is formed on any one of the side surfaces of the 70, all of the side surfaces of the light emitting device according to the embodiment can be implemented smoothly.

9 is a cross-sectional view of a light emitting device 102 according to another embodiment.

Other embodiments may employ technical features of the above embodiments.

The light emitting device 102 according to another embodiment is an example of a horizontal light emitting device, which is a substrate 5, a first conductive semiconductor layer 11 on the substrate 5, and the first conductive type An active layer 12 on the semiconductor layer 11 and a second conductivity type semiconductor layer 13 may be included on the active layer 12.

The light emitting device 102 according to another embodiment has a structure for a horizontal chip, and the first electrode layer 87 may be disposed on the second conductivity type semiconductor layer 13, and the first electrode layer 87 is transparent. It may include an ohmic layer.

The first pad electrode 81 and the second pad electrode 82 may be disposed on the second electrode layer 87 and the exposed first conductivity type semiconductor layer 11, and the buffer layer 14 may be the substrate 5 It can be placed on.

10 is a view showing a light emitting device package to which a light emitting device according to an embodiment is applied.

Referring to FIG. 10, a light emitting device package according to an embodiment includes a body 120, a first lead electrode 131 and a second lead electrode 132 disposed on the body 120, and the body 120 Light emitting device 100 according to an embodiment provided in the first lead electrode 131 and the second lead electrode 132 and electrically connected, and a molding member 140 surrounding the light emitting device 100 It can contain.

The body 120 may be formed of a silicon material, a synthetic resin material, or a metal material, and an inclined surface may be formed around the light emitting device 100.

The first lead electrode 131 and the second lead electrode 132 are electrically separated from each other, and provide power to the light emitting device 100. In addition, the first lead electrode 131 and the second lead electrode 132 may reflect light generated from the light emitting device 100 to increase light efficiency, and heat generated from the light emitting device 100 It can also serve to discharge the outside.

The light emitting device 100 may be disposed on the body 120 or on the first lead electrode 131 or the second lead electrode 132.

The light emitting device 100 may be electrically connected to the first lead electrode 131 and the second lead electrode 132 by any one of a wire method, a flip chip method, and a die bonding method.

The molding member 140 may surround the light emitting device 100 to protect the light emitting device 100. In addition, the molding member 140 includes a phosphor to change the wavelength of the light emitted from the light emitting device 100.

A plurality of light emitting devices or light emitting device packages according to an embodiment may be arranged on a substrate, and an optical member such as a lens, a light guide plate, a prism sheet, and a diffusion sheet may be disposed on an optical path of the light emitting device package. The light emitting device package, the substrate, and the optical member may function as a light unit. The light unit may be implemented in a top view or side view type, and may be provided to display devices such as portable terminals and notebook computers, or may be variously applied to lighting devices and pointing devices. Another embodiment may be implemented as a lighting device including the light emitting device or the light emitting device package described in the above-described embodiments. For example, the lighting device may include a lamp, a street light, a signboard, and a headlight.

11 is an exploded perspective view of a lighting device according to an embodiment.

Referring to FIG. 11, the lighting device according to the embodiment may include a cover 2100, a light source module 2200, a radiator 2400, a power supply unit 2600, an inner case 2700, and a socket 2800. Can be. In addition, the lighting device according to the embodiment may further include any one or more of the member 2300 and the holder 2500. The light source module 2200 may include a light emitting device package according to an embodiment.

For example, the cover 2100 may have a shape of a bulb or a hemisphere, and may be provided in an empty shape and an open portion. The cover 2100 may be optically coupled to the light source module 2200. For example, the cover 2100 may diffuse, scatter, or excite light provided from the light source module 2200. The cover 2100 may be a kind of optical member. The cover 2100 may be combined with the heat radiator 2400. The cover 2100 may have a coupling portion coupled to the heat radiator 2400.

A milky white coating may be coated on the inner surface of the cover 2100. The milky white paint may include a diffusion material that diffuses light. The surface roughness of the inner surface of the cover 2100 may be greater than the surface roughness of the outer surface of the cover 2100. This is for light from the light source module 2200 to be sufficiently scattered and diffused to be emitted to the outside.

The material of the cover 2100 may be glass, plastic, polypropylene (PP), polyethylene (PE), polycarbonate (PC), or the like. Here, the polycarbonate is excellent in light resistance, heat resistance and strength. The cover 2100 may be transparent so that the light source module 2200 is visible from the outside, and may be opaque. The cover 2100 may be formed through blow molding.

The light source module 2200 may be disposed on one surface of the radiator 2400. Accordingly, heat from the light source module 2200 is conducted to the heat sink 2400. The light source module 2200 may include a light source unit 2210, a connection plate 2230, and a connector 2250.

The member 2300 is disposed on an upper surface of the radiator 2400 and has a plurality of light source parts 2210 and guide grooves 2310 into which the connector 2250 is inserted. The guide groove 2310 corresponds to the board and connector 2250 of the light source unit 2210.

The surface of the member 2300 may be coated or coated with a light reflective material. For example, the surface of the member 2300 may be coated or coated with a white paint. The member 2300 reflects light that is reflected on the inner surface of the cover 2100 and returns to the direction of the light source module 2200 in the direction of the cover 2100 again. Therefore, it is possible to improve the light efficiency of the lighting device according to the embodiment.

The member 2300 may be made of an insulating material, for example. The connection plate 2230 of the light source module 2200 may include an electrically conductive material. Accordingly, electrical contact may be made between the heat sink 2400 and the connection plate 2230. The member 2300 may be formed of an insulating material to block electrical shorts between the connection plate 2230 and the heat radiator 2400. The radiator 2400 radiates heat by receiving heat from the light source module 2200 and heat from the power supply unit 2600.

The holder 2500 closes the storage groove 2719 of the insulating portion 2710 of the inner case 2700. Therefore, the power supply unit 2600 accommodated in the insulation portion 2710 of the inner case 2700 is sealed. The holder 2500 has a guide protrusion 2510. The guide protrusion 2510 has a hole through which the protrusion 2610 of the power supply unit 2600 passes.

The power supply unit 2600 processes or converts an electrical signal provided from the outside and provides it to the light source module 2200. The power supply unit 2600 is accommodated in the storage groove 2719 of the inner case 2700 and is sealed inside the inner case 2700 by the holder 2500.

The power supply unit 2600 may include a protrusion 2610, a guide unit 2630, a base 2650, and an extension unit 2670.

The guide portion 2630 has a shape protruding from the side of the base 2650 to the outside. The guide part 2630 may be inserted into the holder 2500. A plurality of parts may be disposed on one surface of the base 2650. The plurality of components include, for example, a DC converter that converts AC power provided from an external power source into DC power, a driving chip that controls the driving of the light source module 2200, and ESD for protecting the light source module 2200. (ElectroStatic discharge) may include, but is not limited to.

The extension portion 2670 has a shape protruding from the other side of the base 2650 to the outside. The extension part 2670 is inserted into the connection part 2750 of the inner case 2700 and receives an electrical signal from the outside. For example, the extension portion 2670 may be provided equal to or smaller than the width of the connection portion 2750 of the inner case 2700. Each end of the "+ wire" and "-wire" is electrically connected to the extension portion 2670, and the other end of the "+ wire" and "-wire" can be electrically connected to the socket 2800. .

The inner case 2700 may include a molding unit together with the power supply unit 2600 therein. The molding part is a part in which the molding liquid is hardened, so that the power supply part 2600 can be fixed inside the inner case 2700.

Features, structures, and effects described in the above embodiments are included in at least one embodiment, and are not necessarily limited to only one embodiment. Furthermore, features, structures, effects, and the like exemplified in each embodiment may be combined or modified for other embodiments by a person having ordinary knowledge in the field to which the embodiments belong. Therefore, contents related to such combinations and modifications should be interpreted as being included in the scope of the embodiments.

Although the embodiments have been mainly described in the above, these are merely examples and do not limit the embodiments, and those who have ordinary knowledge in the field to which the embodiments belong may not be exemplified in the above without departing from the essential characteristics of this embodiment. You will see that it is possible to modify and apply branches. For example, each component specifically shown in the embodiments can be implemented by modification. And differences related to these modifications and applications should be construed as being included in the scope of the embodiments set forth in the appended claims.

The first conductivity type semiconductor layer 11, the active layer 12, the second conductivity type semiconductor layer 13,
In _x Al _y Ga _{1 -x- y} N / GaN layer 17, In _p Ga _{1 - p} N well layer 12a, GaN barrier layer 12b,

Claims (13)

A bonding layer disposed on the support member;
A metal layer disposed on the bonding layer;
A reflective layer disposed on the metal layer;
A channel layer disposed on the reflective layer and the metal layer;
An ohmic contact pattern disposed between the channel layer and the reflective layer;
A second conductivity type semiconductor layer disposed on the ohmic contact pattern;
An active layer disposed on the second conductivity type semiconductor layer;
An In _x Al _y Ga _1-xy N / GaN layer disposed on the active layer (however, 0 <x <1, 0 <y <1);
A first conductivity type semiconductor layer disposed on the In _x Al _y Ga _1-xy N / GaN layer; And
It includes a pad electrode disposed on the first conductive semiconductor layer,
The active layer includes an In _p Ga _1-p N well layer (however, 0 <p <1) and a GaN barrier layer,
In the In _x Al _y Ga _1-xy N / GaN layer (however, the composition range (x) of In in 0 <x <1, 0 <y <1) is 0 <x≤0.13, and the composition range of Al (y ) Is 0 <y≤0.02,
In the In _x Al _y Ga _1-xy N / GaN layer, the relationship between the composition (x) of In and the composition (p) of In of the well layer is in the range of 0.75 ≤ x / p ≤ 1.0,
It said _{In x Al y Ga 1-xy} N / In x Al y Ga 1-xy N wherein the thickness of the GaN layer is _{In x Al y Ga 1-xy} N / GaN layer of a thickness thinner than that of the GaN layer,
The thickness of the In _p Ga _1-p N well layer of the active layer is thinner than the thickness of the GaN barrier layer of the active layer,
The second conductivity type semiconductor layer has the same horizontal width as the In _x Al _y Ga _1-xy N / GaN layer and the active layer,
The top surface of the In _x Al _y Ga _1-xy N / GaN layer is disposed above the top surface of the metal layer and below the top surface of the channel layer. delete delete According to claim 1,
The In _x Al _y Ga _{1 -x- y} N / GaN layer
A light emitting device that is an undoped layer. According to claim 1,
The In _x Al _y Ga _{1 -x- y} N / GaN layer
A light emitting device that is a layer doped with a first conductivity type. According to claim 1,
The In _x Al _y Ga _{1 -x- y} N / GaN layer
A light emitting device comprising a superlattice structure. delete delete delete delete delete delete A lighting device comprising a light-emitting module having the light-emitting element of any one of claims 1, 4, 5, and 6.

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