KR102079053B1 - Ｅｕｖ 광에 대한 타겟 재료 밀림의 사전 보상 - Google Patents

Ｅｕｖ 광에 대한 타겟 재료 밀림의 사전 보상 Download PDF

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KR102079053B1
KR102079053B1 KR1020157009114A KR20157009114A KR102079053B1 KR 102079053 B1 KR102079053 B1 KR 102079053B1 KR 1020157009114 A KR1020157009114 A KR 1020157009114A KR 20157009114 A KR20157009114 A KR 20157009114A KR 102079053 B1 KR102079053 B1 KR 102079053B1
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burst
drop
droplet
axis
drops
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KR20150060755A (ko
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데르 버그트 제로엔 반
매튜 알. 그라함
찰스 키네이
웨인 제이. 던스탄
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에이에스엠엘 네델란즈 비.브이.
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    • H05G2/006—
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/70033—Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
    • B05B17/00—Apparatus for spraying or atomising liquids or other fluent materials, not covered by the preceding groups
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05G—X-RAY TECHNIQUE
    • H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
    • H05G2/001—Production of X-ray radiation generated from plasma
    • H05G2/002—Supply of the plasma generating material
    • H05G2/0027—Arrangements for controlling the supply; Arrangements for measurements
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05G—X-RAY TECHNIQUE
    • H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
    • H05G2/001—Production of X-ray radiation generated from plasma
    • H05G2/008—Production of X-ray radiation generated from plasma involving an energy-carrying beam in the process of plasma generation
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Optics & Photonics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • X-Ray Techniques (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
KR1020157009114A 2012-09-28 2013-08-20 Ｅｕｖ 광에 대한 타겟 재료 밀림의 사전 보상 Active KR102079053B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13/631,645 US9238243B2 (en) 2012-09-28 2012-09-28 System and method to adaptively pre-compensate for target material push-out to optimize extreme ultraviolet light production
US13/631,645 2012-09-28
PCT/US2013/055848 WO2014051891A1 (en) 2012-09-28 2013-08-20 Pre-compensate target material push-out for euv light

Publications (2)

Publication Number Publication Date
KR20150060755A KR20150060755A (ko) 2015-06-03
KR102079053B1 true KR102079053B1 (ko) 2020-02-19

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KR1020157009114A Active KR102079053B1 (ko) 2012-09-28 2013-08-20 Ｅｕｖ 광에 대한 타겟 재료 밀림의 사전 보상

Country Status (5)

Country Link
US (2) US9238243B2 (https=)
JP (1) JP6184500B2 (https=)
KR (1) KR102079053B1 (https=)
TW (1) TWI607289B (https=)
WO (1) WO2014051891A1 (https=)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6087105B2 (ja) * 2012-10-23 2017-03-01 ギガフォトン株式会社 極端紫外光生成装置
US8872123B2 (en) * 2013-01-10 2014-10-28 Asml Netherlands B.V. Method of timing laser beam pulses to regulate extreme ultraviolet light dosing
US9678431B2 (en) * 2015-03-16 2017-06-13 Taiwan Semiconductor Manufacturing Company, Ltd. EUV lithography system and method with optimized throughput and stability
US9591734B1 (en) * 2015-09-29 2017-03-07 Asml Netherlands B.V. Reduction of periodic oscillations in a source plasma chamber
WO2017154111A1 (ja) * 2016-03-08 2017-09-14 ギガフォトン株式会社 極端紫外光生成装置
WO2018029759A1 (ja) * 2016-08-08 2018-02-15 ギガフォトン株式会社 極端紫外光生成方法
US9778022B1 (en) * 2016-09-14 2017-10-03 Asml Netherlands B.V. Determining moving properties of a target in an extreme ultraviolet light source
US10149375B2 (en) * 2016-09-14 2018-12-04 Asml Netherlands B.V. Target trajectory metrology in an extreme ultraviolet light source
WO2018211551A1 (ja) * 2017-05-15 2018-11-22 ギガフォトン株式会社 ターゲット計測装置及び極端紫外光生成装置
US10314154B1 (en) * 2017-11-29 2019-06-04 Taiwan Semiconductor Manufacturing Co., Ltd. System and method for extreme ultraviolet source control
WO2019186754A1 (ja) 2018-03-28 2019-10-03 ギガフォトン株式会社 極端紫外光生成システム及び電子デバイスの製造方法
US10925142B2 (en) * 2018-07-31 2021-02-16 Taiwan Semiconductor Manufacturing Co., Ltd. EUV radiation source for lithography exposure process
US20200057376A1 (en) * 2018-08-14 2020-02-20 Taiwan Semiconductor Manufacturing Co., Ltd. Lithography system and lithography method
WO2020165942A1 (ja) * 2019-02-12 2020-08-20 ギガフォトン株式会社 極端紫外光生成装置、ターゲット制御方法、及び電子デバイスの製造方法
WO2020200610A1 (en) 2019-04-04 2020-10-08 Asml Netherlands B.V. Radiation system
KR102375567B1 (ko) * 2019-11-01 2022-03-16 주식회사 포스코 고정장치 및 이를 이용한 밸런스 레버
JP2024011005A (ja) 2022-07-13 2024-01-25 ギガフォトン株式会社 Ｅｕｖ光生成システム及び電子デバイスの製造方法
KR20240117731A (ko) 2023-01-26 2024-08-02 주식회사 베이직컴퍼니 슬라이드식 간이 테이블을 구비한 침대

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011003887A (ja) 2009-05-21 2011-01-06 Gigaphoton Inc チャンバ装置におけるターゲット軌道を計測及び制御する装置及び方法

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US4872189A (en) * 1987-08-25 1989-10-03 Hampshire Instruments, Inc. Target structure for x-ray lithography system
US7372056B2 (en) 2005-06-29 2008-05-13 Cymer, Inc. LPP EUV plasma source material target delivery system
US6930851B2 (en) * 2003-06-26 2005-08-16 Seagate Technology Llc Guiding a sensor using a broadly-curved lateral profile
US7718985B1 (en) * 2005-11-01 2010-05-18 University Of Central Florida Research Foundation, Inc. Advanced droplet and plasma targeting system
US7501642B2 (en) * 2005-12-29 2009-03-10 Asml Netherlands B.V. Radiation source
NL2003772A (en) * 2008-12-11 2010-06-14 Asml Netherlands Bv Lithographic apparatus and a method to compensate for the effect of disturbances on the projection system of a lithographic apparatus.
US8138487B2 (en) 2009-04-09 2012-03-20 Cymer, Inc. System, method and apparatus for droplet catcher for prevention of backsplash in a EUV generation chamber
US9072153B2 (en) * 2010-03-29 2015-06-30 Gigaphoton Inc. Extreme ultraviolet light generation system utilizing a pre-pulse to create a diffused dome shaped target
JP5864949B2 (ja) * 2010-11-29 2016-02-17 ギガフォトン株式会社 極端紫外光生成システム
JP6434404B2 (ja) * 2013-06-20 2018-12-05 ギガフォトン株式会社 極端紫外光生成システム
JP6513025B2 (ja) * 2013-09-17 2019-05-15 ギガフォトン株式会社 極端紫外光生成装置

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011003887A (ja) 2009-05-21 2011-01-06 Gigaphoton Inc チャンバ装置におけるターゲット軌道を計測及び制御する装置及び方法

Also Published As

Publication number Publication date
US20160202614A1 (en) 2016-07-14
US9588430B2 (en) 2017-03-07
TW201421168A (zh) 2014-06-01
KR20150060755A (ko) 2015-06-03
WO2014051891A1 (en) 2014-04-03
US20140091239A1 (en) 2014-04-03
JP2015532505A (ja) 2015-11-09
JP6184500B2 (ja) 2017-08-23
US9238243B2 (en) 2016-01-19
TWI607289B (zh) 2017-12-01

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