KR102051189B1 - 유기막 형성용 조성물 - Google Patents

유기막 형성용 조성물 Download PDF

Info

Publication number
KR102051189B1
KR102051189B1 KR1020170155725A KR20170155725A KR102051189B1 KR 102051189 B1 KR102051189 B1 KR 102051189B1 KR 1020170155725 A KR1020170155725 A KR 1020170155725A KR 20170155725 A KR20170155725 A KR 20170155725A KR 102051189 B1 KR102051189 B1 KR 102051189B1
Authority
KR
South Korea
Prior art keywords
organic
composition
organic film
film
forming
Prior art date
Application number
KR1020170155725A
Other languages
English (en)
Korean (ko)
Other versions
KR20190015060A (ko
Inventor
세이이치로 다치바나
히로코 나가이
다이스케 고리
츠토무 오기하라
Original Assignee
신에쓰 가가꾸 고교 가부시끼가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 신에쓰 가가꾸 고교 가부시끼가이샤 filed Critical 신에쓰 가가꾸 고교 가부시끼가이샤
Publication of KR20190015060A publication Critical patent/KR20190015060A/ko
Application granted granted Critical
Publication of KR102051189B1 publication Critical patent/KR102051189B1/ko

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09DCOATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D201/00Coating compositions based on unspecified macromolecular compounds
    • C09D201/02Coating compositions based on unspecified macromolecular compounds characterised by the presence of specified groups, e.g. terminal or pendant functional groups
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B05SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05DPROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D1/00Processes for applying liquids or other fluent materials
    • B05D1/002Processes for applying liquids or other fluent materials the substrate being rotated
    • B05D1/005Spin coating
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09DCOATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D7/00Features of coating compositions, not provided for in group C09D5/00; Processes for incorporating ingredients in coating compositions
    • C09D7/20Diluents or solvents
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/09Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Materials Engineering (AREA)
  • Wood Science & Technology (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Materials For Photolithography (AREA)
KR1020170155725A 2017-08-04 2017-11-21 유기막 형성용 조성물 KR102051189B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201715669338A 2017-08-04 2017-08-04
US15/669,338 2017-08-04

Publications (2)

Publication Number Publication Date
KR20190015060A KR20190015060A (ko) 2019-02-13
KR102051189B1 true KR102051189B1 (ko) 2019-12-02

Family

ID=65366663

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020170155725A KR102051189B1 (ko) 2017-08-04 2017-11-21 유기막 형성용 조성물

Country Status (3)

Country Link
KR (1) KR102051189B1 (zh)
CN (1) CN109388021B (zh)
TW (1) TWI653284B (zh)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016094612A (ja) 2012-06-18 2016-05-26 信越化学工業株式会社 有機膜形成用化合物、これを用いた有機膜材料、有機膜形成方法、パターン形成方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5859420B2 (ja) * 2012-01-04 2016-02-10 信越化学工業株式会社 レジスト下層膜材料、レジスト下層膜材料の製造方法、及び前記レジスト下層膜材料を用いたパターン形成方法
CN104838315B (zh) * 2012-12-14 2019-06-07 日产化学工业株式会社 包含多羟基芳香环酚醛清漆树脂的抗蚀剂下层膜组合物
JP6119667B2 (ja) * 2013-06-11 2017-04-26 信越化学工業株式会社 下層膜材料及びパターン形成方法
WO2015008560A1 (ja) * 2013-07-19 2015-01-22 Dic株式会社 フェノール性水酸基含有化合物、感光性組成物、レジスト用組成物、レジスト塗膜、硬化性組成物、レジスト下層膜用組成物、及びレジスト下層膜
US9580623B2 (en) * 2015-03-20 2017-02-28 Shin-Etsu Chemical Co., Ltd. Patterning process using a boron phosphorus silicon glass film

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016094612A (ja) 2012-06-18 2016-05-26 信越化学工業株式会社 有機膜形成用化合物、これを用いた有機膜材料、有機膜形成方法、パターン形成方法

Also Published As

Publication number Publication date
CN109388021A (zh) 2019-02-26
CN109388021B (zh) 2022-09-27
KR20190015060A (ko) 2019-02-13
TWI653284B (zh) 2019-03-11
TW201910420A (zh) 2019-03-16

Similar Documents

Publication Publication Date Title
US9984878B2 (en) Resist under layer film composition and patterning process
US10156788B2 (en) Resist underlayer film composition, patterning process, and compound
KR102042286B1 (ko) 하층막 재료 및 패턴 형성 방법
KR101813311B1 (ko) 하층막 재료 및 패턴 형성 방법
JP5068831B2 (ja) レジスト下層膜材料、レジスト下層膜形成方法、パターン形成方法
TWI649624B (zh) Pattern forming method, resin and photoresist underlayer film forming composition
KR102143283B1 (ko) 유기막 형성용 조성물, 반도체 장치 제조용 기판, 유기막의 형성 방법, 및 패턴 형성 방법
KR102479248B1 (ko) 반도체용 레지스트 하층막 형성 조성물, 레지스트 하층막, 레지스트 하층막의 형성 방법 및 패터닝 기판의 제조 방법
US10514605B2 (en) Resist multilayer film-attached substrate and patterning process
KR102011579B1 (ko) 레지스트 다층막이 부착된 기판 및 패턴 형성 방법
JP6951297B2 (ja) 有機膜形成用組成物及び有機膜
KR20190057060A (ko) 화합물, 수지, 조성물, 그리고 레지스트 패턴 형성방법 및 회로패턴 형성방법
KR20190057062A (ko) 화합물, 수지, 조성물, 그리고 레지스트 패턴 형성방법 및 패턴 형성방법
KR102051189B1 (ko) 유기막 형성용 조성물
US20150037736A1 (en) Acidic treatment-subjected monoalkylnaphthalene formaldehyde resin
JP7196389B2 (ja) 半導体用レジスト下層膜形成組成物、レジスト下層膜、レジスト下層膜の形成方法及びパターニング基板の製造方法
US9899218B2 (en) Resist under layer film composition and patterning process
JP7123668B2 (ja) レジスト多層膜付き基板及びパターン形成方法
US11042090B2 (en) Composition for forming organic film
TW201704863A (zh) 光阻下層膜材料及圖案形成方法
KR102563290B1 (ko) 레지스트 하층막용 조성물 및 이를 이용한 패턴형성방법

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
E701 Decision to grant or registration of patent right
GRNT Written decision to grant