KR102026107B1 - Light exposure device and method for manufacturing exposed material - Google Patents

Light exposure device and method for manufacturing exposed material Download PDF

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KR102026107B1
KR102026107B1 KR1020147018966A KR20147018966A KR102026107B1 KR 102026107 B1 KR102026107 B1 KR 102026107B1 KR 1020147018966 A KR1020147018966 A KR 1020147018966A KR 20147018966 A KR20147018966 A KR 20147018966A KR 102026107 B1 KR102026107 B1 KR 102026107B1
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exposure
alignment mark
mask
imaging
exposed material
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KR1020147018966A
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KR20140119697A (en
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카츠시게 하시모토
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브이 테크놀로지 씨오. 엘티디
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    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003Alignment type or strategy, e.g. leveling, global alignment
    • G03F9/7038Alignment for proximity or contact printer
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7088Alignment mark detection, e.g. TTR, TTL, off-axis detection, array detector, video detection

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

It is possible to more accurately specify the relative positions of the exposure mask and the exposed material without using complicated and expensive mechanisms, and further eliminate the delay in working time using the exposure apparatus. The exposure apparatus according to the present invention captures at least a part of the first alignment marks and the second alignment marks formed on the exposure mask through the microlens array, and does not disturb the exposure to the exposed material when the imaging is completed. An image pickup section that moves in a predetermined direction so as to be aligned, a position alignment control section for aligning positions of the exposed material and the exposure mask on the basis of the positional information of the first and second position alignment marks, and from the light source before movement of the image pickup section is completed. An exposure start timing control part is provided so that irradiation of exposure light may be started.

Figure 112014064271447-pct00001

Description

LIGHT EXPOSURE DEVICE AND METHOD FOR MANUFACTURING EXPOSED MATERIAL}

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an exposure apparatus and an exposure material manufacturing method, and more particularly, to an exposure apparatus and an exposure material manufacturing method for exposing an exposed material by aligning positions of the exposed material and the exposure mask.

Conventionally, the exposure apparatus which exposes to-be-exposed material by a predetermined pattern using the mask for exposure is known. Such an exposure apparatus is used, for example, in the manufacture of color filters for liquid crystal displays, in alignment treatment of optical alignment films, and the like. When using an exposure mask, it is necessary to align the position of an exposure mask and a to-be-exposed material. As an example, the mark for position alignment is used for position alignment of an exposure mask and a to-be-exposed material (for example, patent document 1).

Patent Document 1 describes a mask having a mask mark and a position detecting method for detecting the position of a wafer having a wafer mark. First, a mask having a mask mark and a wafer having a wafer mark are placed in close proximity. Next, a mask mark and a wafer mark are imaged. Since there is a distance between the mask and the wafer at the time of imaging, the imaging position of the mask mark and the wafer mark changes according to this distance. Accordingly, in the position detection method described in Patent Document 1, the mask mark and the wafer mark are imaged using two optical paths having different optical path lengths, and the mask mark and the wafer mark are coplanar by adjusting the optical path lengths of the two optical paths. Is missing in. On this coplanar face, a repositioning reticle having a mark for alignment of the mask and a mark for alignment of the wafer is disposed. The relative position between the mask position alignment mark of the position alignment reticle and the mask mark of the mask is detected, and the relative position between the position alignment mark of the position alignment reticle and the image of the wafer mark of the wafer is determined. Detect. As a result, the relative position between the mask and the wafer is detected.

In the method described in Patent Literature 1, after the alignment between the mask and the wafer is performed, the exposure layer is moved from the mask side by moving the alignment system or irradiating the exposure energy from the mask side at a position where the alignment system does not interfere. Is exposed.

[Patent Document 1] Japanese Unexamined Patent Application Publication No. 2004-103644

However, in the position detection method described in Patent Literature 1, the mask mark and the wafer mark are imaged by using two optical paths having different optical path lengths and the optical path lengths of the two optical paths are adjusted on the same plane. It is missing. As described above, in the case of the method of correcting the misalignment of the imaging position between the mask mark and the wafer mark by adjusting the optical path lengths of the two optical paths, the optical path length when the angle of the optical axis with respect to the imaging object in each optical path is out of a predetermined angle. Also, the relative positions of the mask mark and the wafer mark change accordingly. Therefore, when the angle of the optical axis with respect to an imaging object deviates from a predetermined angle for some reason, such as the inclination of a camera, there exists a problem that the relative position of the exposure mask and the wafer which are to-be-exposed materials cannot be pinpointed.

Moreover, the position detection apparatus of patent document 1 arrange | positions a position alignment reticle on the optical axis of each optical path, and provides the optical path length adjustment means with respect to each optical path. Therefore, a complicated mechanism that requires cost is required for the alignment of the exposure mask and the wafer as the exposed material.

In addition, in the method described in Patent Literature 1, after the alignment between the mask and the wafer is performed, the alignment layer is moved or the exposure energy is irradiated from the mask side at a position where the alignment system does not interfere. Is exposed. Moving the position alignment optical system has less effect on the arrangement position of the light source or the position of the exposure area in the exposed material than performing exposure at a position where the position alignment optical system does not interfere. However, if the exposure to the wafer is started after moving the alignment system, the work time using the exposure apparatus is delayed by the movement time of the alignment system.

Accordingly, it is an object of the present invention to more accurately specify the relative positions of an exposure mask and an exposed material without using complicated and expensive mechanisms for exposing the exposed material, and to eliminate the delay in working time using the exposure apparatus.

The present invention relates to an exposure apparatus. In order to achieve the above object, an exposure apparatus according to the present invention includes a light source for irradiating exposure light to an exposure material, an exposure mask supported between the light source and the exposure material, a microlens array disposed between the exposure material and the exposure mask; A first position formed in the exposure mask through the microlens array to align the positions of the exposure material and the exposure mask by using the first position alignment mark provided on the exposure material and the second position alignment mark provided on the exposure mask. At least a portion of the alignment mark and the second position alignment mark, and when the imaging is completed, the imaging unit moving in a predetermined direction so as not to disturb the exposure to the exposed material, and the first imaging unit captured by the imaging unit. An image recognition unit for recognizing at least a portion of the position alignment mark and the second position alignment mark, and a first position recognized by the image recognition unit A position alignment control unit for aligning positions of the exposed material and the exposure mask based on at least a portion of the alignment marks and the position information of the second position alignment mark, and an exposure to start irradiation of exposure light from the light source before movement of the imaging unit is completed; A start timing controller.

"Exposed material" refers to an object to be exposed. The "exposed material" includes a substrate and a substrate having a surface to be exposed, and examples of the "exposed material" include a glass substrate laminated with a photoresist film, a photosensitive film, and various members exposed to manufacture a liquid crystal panel. "Before the movement of the imaging part is completed" means before the movement of the imaging part is completed and the imaging part stops in a predetermined position. Therefore, "before the movement of the imaging part is completed" includes "before the movement of the imaging part starts", "simultaneous with the movement start of the imaging part", and "after the movement of the imaging part starts, and before the movement of the imaging part is completed".

For example, a light source irradiates exposure light while moving.

As an example, the microlens array moves in one direction between the first position alignment mark provided on the exposed material and the second position alignment mark provided on the exposure mask while the imaging unit is capturing, and the light source is irradiating the exposure light. , Together with the light source, moves in one direction in the opposite direction.

The microlens array moves between the first alignment mark provided on the exposed material and the second alignment mark provided on the exposure mask while the imaging unit is capturing, and the imaging unit moves to the exposure mask through the moving microlens array. At least a part of the formed first alignment marks is taken together with the second alignment marks in a plurality of times or continuously, and the image recognition unit superimposes the images taken multiple times or continuously to the marks for the second alignment. It may also be configured to generate a synthesized image for specifying the position of the first position alignment mark.

Moreover, this invention relates to the manufacturing method of an exposure material. An exposure material for an exposure material using an exposure apparatus including a light source for irradiating exposure light, an exposure mask supported between the light source and the exposure material, and a microlens array disposed between the exposure material and the exposure mask. In the manufacturing method, an image is formed on the exposure mask through a microlens array to align the positions of the exposure material and the exposure mask using the first position alignment mark provided on the exposure material and the second position alignment mark provided on the exposure mask. An imaging step for imaging at least a portion of the first alignment mark and the second alignment mark of the exposure mask, and at least a portion of the first alignment mark captured by the imaging step and the second alignment An image recognition step of recognizing the mark by the image recognition unit and a first position alignment recognized by the image recognition step A position alignment step of aligning the exposed material and the exposure mask with the position alignment control unit based on at least a part of the mark and position information of the second position alignment mark; and after the imaging in the imaging step is completed, exposure to the exposed material The exposure start timing control unit is configured for the exposure material and the exposure position aligned by the position alignment step before the imaging unit moving step in which the imaging unit moves in a predetermined direction and the movement of the imaging unit in the imaging unit moving step is completed, so as not to interfere. An exposure start step of causing irradiation of exposure light from the light source to the mask.

"Exposure material" means that exposure is completed and "exposure material" is exposed. The "exposure material" includes an exposed substrate and a substrate, and examples of the "exposure material" include an exposed glass substrate, an exposed film, and various members exposed to manufacture a liquid crystal panel.

For example, the method further includes an exposure step of irradiating exposure light while the light source is moving.

As an example, in the imaging step, the microlens array moves in one direction between the first alignment mark provided on the to-be-exposed material and the second alignment mark provided on the exposure mask, and in the exposure step, the microlens array moves together with the light source. Move in the reverse direction of one direction.

In the imaging step, the microlens array is moved between the first position alignment mark provided on the to-be-exposed material and the second position alignment mark provided on the exposure mask, and the first position formed on the exposure mask through the moving micro lens array. At least a part of the mark for alignment is picked up by the image pickup unit a plurality of times or continuously with the mark for the second position alignment, and in the image recognition step, the image recognition unit superimposes the images picked up multiple times or continuously in the second position alignment. The composition may be configured to generate a composite image for specifying the position of the first position alignment mark with respect to the dragon mark.

An exposure apparatus according to the present invention includes an image pickup unit for picking up at least a portion of the first position alignment mark formed in the exposure mask through a microlens array, a second position alignment mark, and a first image picked up by the image pickup unit. And an image recognizing unit for recognizing at least a part of the position alignment mark and the second position alignment mark. Since at least a part of the first position alignment mark to be imaged is formed on the exposure mask through the microlens array, the imaging unit includes a second position alignment mark provided on the exposure mask and an image formed on the exposure mask through the microlens array. At least a part of the 1 position alignment mark can be imaged on the same plane. Therefore, the shift | offset | difference of the imaging position of the 1st alignment mark and the 2nd alignment mark which originates in the distance between the to-be-exposed material provided with the 1st alignment mark and the exposure mask provided with the 2nd alignment mark is eliminated. Can be.

The exposure apparatus which concerns on this invention did not employ | adopt the method of adjusting the optical path length of the optical path with respect to an imaging object in order to eliminate the said shift of the said imaging position. Therefore, even if the optical axis of the image pickup unit for imaging the first and second position alignment marks is out of a predetermined angle, the first position alignment mark and the second position alignment imaged by the image pickup unit and recognized by the image recognition unit The relative position of the dragon mark does not change. Therefore, the relative position of a mask for exposure and a to-be-exposed material can be specified more correctly.

Moreover, in order to image the 1st alignment mark and the 2nd alignment mark, it is not necessary to provide the two optical paths of a different optical path length, and the optical path length adjustment means with respect to each optical path, Furthermore, on the optical axis of each optical path You do not need to place the alignment reticle in the. Therefore, a costly complicated mechanism is unnecessary for the alignment of the exposure mask and the exposed material.

In addition, the exposure apparatus according to the present invention includes an imaging unit which moves in a predetermined direction so as not to interfere with exposure to an exposed material when imaging is completed, and an exposure start which starts irradiation of exposure light from a light source before movement of the imaging unit is completed. It includes a timing controller. Therefore, since exposure starts before the movement of an imaging part is completed, the delay of the working time using an exposure apparatus can be eliminated.

As described above, according to the exposure apparatus according to the present invention, it is possible to more accurately specify the relative position of the exposure mask and the exposure material without using a complicated and expensive mechanism in the exposure of the exposure material, and furthermore, The delay can be eliminated.

When the exposure light is irradiated while the light source is moved, a smaller light source can be used, and the exposure apparatus can be miniaturized.

The microlens array is moved in one direction between the first position alignment mark provided on the to-be-exposed material and the second position alignment mark provided on the exposure mask while the imaging unit is capturing, and while the light source is illuminating the exposure light, In addition, when it is comprised so that it may move to the reverse direction of one direction, imaging of the 1st position alignment mark and exposure of a to-be-exposed material can be performed using a smaller and common microlens array. Since a large microlens array is expensive, the imaging cost of the 1st alignment mark and exposure of the to-be-exposed material can be made possible by using a smaller and common microlens array, and the manufacturing cost of an exposure apparatus can be reduced.

The image pickup unit captures at least a portion of the first alignment mark formed on the exposure mask through the moving microlens array multiple times or continuously with the second alignment mark, and the image recognition unit multiple times or continuously. The first image formed on the exposure mask through the microlens array, when the image captured by the above is superimposed so as to generate a composite image for specifying the position of the first alignment mark relative to the second alignment mark. By superimposing a partial image of the alignment mark, more positional information of the first alignment mark can be obtained. Therefore, the position of the first position alignment mark formed by the microlens array can be more surely specified.

The exposure material manufacturing method which concerns on this invention is an imaging step which an imaging part picks up at least a part of the 1st position alignment mark formed in the exposure mask through the microlens array, and the 2nd position alignment mark of the exposure mask, and the imaging step, And an image recognition step of recognizing at least a part of the first position alignment mark and the second position alignment mark picked up by the image recognition unit.

Since at least a part of the first position alignment mark to be picked up is formed in the exposure mask through the microlens array, the imaging unit is a second position alignment mark provided in the exposure mask and the first position formed in the exposure mask through the microlens array. At least a part of the alignment mark can be imaged on the same plane. Therefore, the shift | offset | difference of the imaging position of the 1st alignment mark and the 2nd alignment mark which originates in the distance between the to-be-exposed material provided with the 1st alignment mark and the exposure mask provided with the 2nd alignment mark is eliminated. Can be. In the exposure material manufacturing method which concerns on this invention, the method of adjusting the optical path length of the optical path with respect to an imaging object was not employ | adopted in order to eliminate the said shift of the said imaging position. Therefore, even if the optical axis of the image pickup unit for imaging the first and second position alignment marks is out of a predetermined angle, the first position alignment mark and the second position alignment imaged by the image pickup unit and recognized by the image recognition unit The relative position of the dragon mark does not change. Therefore, the relative position of a mask for exposure and a to-be-exposed material can be specified more correctly.

Moreover, in order to image the 1st alignment mark and the 2nd alignment mark, it is not necessary to provide the two optical paths of a different optical path length, and the optical path length adjustment means with respect to each optical path, Furthermore, on the optical axis of each optical path You do not need to place the alignment reticle in the. Therefore, a costly complicated mechanism is unnecessary for the alignment of the exposure mask and the exposed material.

Moreover, the exposure material manufacturing method which concerns on this invention is an imaging part movement step which an imaging part moves to a predetermined direction so that the exposure to a to-be-exposed material does not interfere after the imaging in an imaging step is complete | finished, and the imaging part in an imaging part movement step Before the movement is completed, the exposure start timing control section includes an exposure start step of causing irradiation of exposure light from the light source to the exposed material and the exposure mask that are aligned by the position alignment step. In the exposure start step, the light source starts exposure before the movement of the imaging unit is completed, thereby eliminating the delay of the working time using the exposure apparatus.

As described above, according to the exposure material manufacturing method according to the present invention, the relative position of the exposure mask and the exposure material is more precisely specified without using a complicated and expensive mechanism for exposure of the exposure material, and further, the working time using the exposure apparatus. This can eliminate the delay.

In the case where the light source further includes an exposure step of irradiating the exposure light, a smaller light source can be used, and the exposure apparatus can be miniaturized.

In the imaging step, the microlens array moves in one direction between the first position alignment mark provided on the to-be-exposed material and the second position alignment mark provided on the exposure mask, and in the exposure step, the microlens array moves in one direction together with the light source. When configured to move in the reverse direction, the imaging of the first alignment mark and the exposure of the exposed material can be performed using a smaller and common microlens array. Since the large sized microlens array is expensive, it is possible to reduce the manufacturing cost of the exposure apparatus as imaging of the first positioning mark and exposure of the exposed material can be made possible by using a smaller and common microlens array.

In the imaging step, the imaging unit picks up at least a portion of the first alignment marks formed on the exposure mask through the moving microlens array a plurality of times or successively together with the second alignment marks. In the case where the image recognition unit is configured to generate a composite image for specifying the position of the first position alignment mark with respect to the second position alignment mark by superimposing the images picked up multiple times or continuously, By overlapping the partial image of the 1st alignment mark image-formed on the exposure mask through this, more positional information of the 1st alignment mark can be acquired. Therefore, the position of the first position alignment mark formed by the microlens array can be more surely specified.

1 is a side view of an exposure apparatus according to a first embodiment,
FIG. 2A is a plan view of the exposure mask shown in FIG. 1 seen from the exposed material side, and FIG. 2B is a plan view of the exposed material shown in FIG. 1 viewed from the light source part side, and FIG. ) Is a plan view of the first position alignment mark and the second position alignment mark shown in FIG. 1,
3A is a schematic diagram showing the structure of the microlens array shown in FIG. 1, and FIG. 3B is a schematic diagram showing the positional relationship between the field of view aperture and the aperture stop of the microlens array shown in FIG. 1. ,
4 is a schematic diagram showing the positional relationship between the arrangement of the microlens array and the field stop shown in FIG.
5 (a) to 5 (c) show a partial image of the first alignment mark formed by the microlens array shown in FIG. 1 and a partial image of the first alignment mark. Iii) is an explanatory diagram showing a composite image superimposed, (d) of FIG. 5 is an image diagram showing a first position alignment mark and a second position alignment mark displayed on the composite image,
FIG. 6A is a side view showing the positional relationship of each structural member in the exposure apparatus according to the first embodiment, and FIG. 6B is the position of each structural member in the exposure apparatus according to the first embodiment. Side view showing the relationship,
FIG. 7C is a side view showing the positional relationship of each structural member in the exposure apparatus according to the first embodiment, and FIG. 7D is the position of each structural member in the exposure apparatus according to the first embodiment. Side view showing the relationship,
8 is a flowchart illustrating a process relating to an operating method of the exposure apparatus according to the first embodiment and a method of manufacturing an exposure material using the exposure apparatus.
FIG. 9 is a plan view showing an exposed side surface of the to-be-exposed material shown in FIG. 1.

[First embodiment]

EMBODIMENT OF THE INVENTION Hereinafter, embodiment of this invention is described by attached drawing. 1 is a side view of the exposure apparatus according to the first embodiment. The exposure apparatus according to the first embodiment exposes the exposed material through an exposure mask having a predetermined mask pattern. The exposure apparatus 1 includes a light source part 3 for irradiating exposure light to the exposed material 2, an exposure mask 4 supported between the light source part 3 and the exposed material 2, the exposed material 2, The microlens array 6 is provided between the exposure masks 4.

Moreover, the exposure apparatus 1 uses the 1st position alignment mark 7 provided in the to-be-exposed material 2, and the 2nd position alignment mark 8 provided in the exposure mask 4, and uses the to-be-exposed material 2 ) And the mask 4 for exposure, and the imaging part 10 which image | photographs the 1st position alignment mark 7 and the 2nd position alignment mark 8, and the image 1st position alignment The image recognition part 12 which recognizes the use mark 7 and the 2nd position alignment mark 8 is provided, and the control part 14 which performs a various control is provided. The control unit 14 controls the position of the exposure mask with respect to the exposed material based on the positional information of the first alignment mark 7 and the second alignment mark 8 recognized by the image recognition unit 12. The position alignment control part 16, the camera retraction movement control part 17 which controls the movement of an imaging part, and the exposure start timing control part 18 which start irradiation of exposure light from a light source part are provided.

The to-be-exposed material 2 is a glass substrate which has a photoresist layer on the exposure side surface 2a. This glass substrate is G6 size (about 1850 mm x 1500 mm), for example. The exposed glass substrate is used as a color filter of a liquid crystal panel member as an example. In the exposure apparatus 1, the to-be-exposed material 2 is supported by the support part (not shown).

The light source part 3 has a light source which consists of an ultra-high pressure mercury lamp, a xenon flash lamp, etc., for example, and an exposure wavelength range is 280 nm-400 nm as an example. The light source unit 3 includes a photo integrator and a condenser lens. The photo integrator equalizes the luminance distribution in the cross section of the exposure light emitted from the light source unit 3. The photo integrator may be a fly-eye lens, a rod lens, a light pipe, or the like. The exposure light with uniform luminance distribution is incident on the condenser lens to become parallel light having a uniform luminance distribution. The optical axis of this parallel light is set to the perpendicular direction with respect to the exposure side surface 2a of the to-be-exposed material 2.

In the present embodiment, the light source unit 3 is configured to be movable in the X-axis direction by any driving means (not shown), and irradiates the exposure light to the exposed material 2 while moving. The irradiation area of the exposure light of the to-be-exposed material 2 is, for example, 150 mm in the X-axis direction and 450 mm in the Y-axis direction (the direction perpendicular to the paper surface in FIG. 1) perpendicular to the X-axis. As an example, the light source unit 3 is disposed about 1 m above the exposure mask 4.

The exposure mask 4 is a glass photomask formed in a plate shape. The mask surface 4a on the side opposite to the to-be-exposed material 2 is shown in FIG. The exposure mask 4 is rectangular, and the short side of the exposure mask 4 extends in the X-axis direction, and the long side of the exposure mask 4 extends in the Y-axis direction perpendicular to the X-axis and the X-axis (see FIG. 1. In the vertical direction). The exposure mask 4 has a predetermined mask pattern 20 including a light shielding region for shielding the exposure light from the light source unit 3 and a light transmission region for transmitting the exposure light from the light source unit 3. In the exposure mask 4, the pattern region in which the mask pattern 20 is formed is rectangular. The exposure material 2 is exposed to the exposure side surface 2a of the exposure material 2 by the exposure light transmitted through the exposure mask 4 to be exposed in a predetermined pattern. The light shielding region is formed by laminating a light shielding film on one surface of the glass substrate. The light shielding film is an opaque thin film that shields exposure light, and is, for example, a thin film of chromium (Cr). The portion in which the opaque thin film is not laminated becomes a light transmitting region because the glass substrate transmits the exposure light. The mask pattern 20 is a pattern arranged alternately between a light blocking region and a light transmitting region extending linearly.

The mask 4 for exposure is supported between the light source part 3 and the to-be-exposed material 2 by arbitrary mask support means. The distance between the exposed material 2 and the exposure mask 4 is about 5 to 15 mm. The exposure mask 4 supported by the mask support means is movable in the Y-axis direction (the direction perpendicular to the paper surface in FIG. 1) perpendicular to the X-axis direction and the X-axis direction by arbitrary driving means (not shown). Do.

In the mask 4 for exposure, two 2nd position alignment marks 8 are formed in the mask surface 4a on the side opposite to the to-be-exposed material 2. In this embodiment, each 2nd position alignment mark 8 is arrange | positioned in the vicinity of the center of each short side of a pattern area in the outer side of a pattern area. Since the light shielding film is not formed outside the mask pattern 20 in the mask 4 for exposure, the second positioning mark 8 formed on the mask surface 4a is picked up through the light-transmitting portion of the mask 4 for exposure. The image can be picked up by the unit 10. The exposure light is not irradiated to the outside of the pattern region of the mask pattern 20.

In the to-be-exposed material 2, the 1st position alignment mark 7 is formed in the position corresponding to the 2nd position alignment mark 8. The exposure side surface 2a of the to-be-exposed material 2 is shown to FIG. 2 (b). The to-be-exposed material 2 includes the area 21 for exposure. The exposure area 21 is formed into a rectangle having the same size as a rectangle of the pattern area in which the mask pattern 20 is formed. The short side of the exposure area 21 extends in the X-axis direction, and the long side of the exposure area 21 extends in the Y-axis direction perpendicular to the X-axis and the X-axis (the direction perpendicular to the paper surface in FIG. 1). The length of the long side of the area 21 for exposure is 450 mm and corresponds to the length in the Y-axis direction of the above-mentioned irradiation area. Two first positioning marks 7 are provided for one exposure area 21. Each first alignment mark 7 is disposed near the center of each short side of the exposure area 21 outside the exposure area 21.

The enlarged view of the 1st position alignment mark 7 and the 2nd position alignment mark 8 is shown to FIG. 2 (c). In this embodiment, the 2nd position alignment mark 8 is formed in the rectangular frame shape, and the 1st position alignment mark 7 is rectangular. In the present embodiment, as shown in Fig. 2C, when the exposure mask 4 and the exposed material 2 are seen from the light source part 3 side, the first position alignment mark 7 is aligned with the second position. When it is located in the inner center of the frame shape of the dragon mark 8, the exposure mask 4 and the to-be-exposed material 2 are exactly aligned. Therefore, the position of the exposure mask 4 and the to-be-exposed material 2 can be aligned by making the center of the 1st alignment mark 7 and the 2nd alignment mark 8 center.

The imaging unit 10 is a single CCD (charge coupled device) camera having a field of view of about 1.5 mm, and includes a short focal lens and a camera light source. The imaging unit 10 employs a coaxial episcopic illumination method, and uses an optical system such as a half mirror to match the optical axis of the illumination irradiated to the object from the camera light source and the optical axis of the short focal lens. . The optical axis 11 of the illumination irradiated from the imaging section 10 toward the exposure mask 4 is set perpendicular to the mask surface 4a of the exposure mask 4. As a light source for a camera, a laser beam or a lamp light transmitted through an interference filter can be used, and a halogen lamp can be used as a lamp light source. As an example, red light of about 600 nm wavelength is irradiated from the camera light source. The imaging part 10 is comprised so that a movement is possible by arbitrary drive means (not shown).

The image recognition unit 12 recognizes the image picked up by the imaging unit 10. In the present embodiment, the image recognition unit 12 has a function of generating a synthesized image by performing image processing on a group of captured images. For example, the image recognition part 12 superimposes the image imaged multiple times or continuously, and synthesize | combined the image for specifying the position of the 1st position alignment mark 7 with respect to the 2nd position alignment mark 8. Can be generated. The image recognition unit 12 and the control unit 14 are configured by, for example, arithmetic means such as a CPU and a storage means such as a memory to execute a predetermined program.

The microlens array 6 comprises microlenses in an array shape. In the present embodiment, the microlens array 6 constitutes a 1x upright projection lens. The exposure light irradiated from the light source unit 3 through the exposure mask 4 is again irradiated to the exposed material 2 through the microlens array 6. By exposing the to-be-exposed material 2 through the microlens array 6, the resolution fall of the exposure pattern resulting from the time (collimation half angle) of exposure light can be suppressed.

The configuration of the microlens array 6 is shown in Fig. 3A. In the present embodiment, the microlens array 6 has a structure in which four unit microlens arrays 61, 62, 63, and 64 are stacked. Each of the unit microlens arrays 61, 62, 63, 64 includes a plurality of microlenses 60 constituted by two convex lenses. Therefore, the exposure light incident on the unit microlens array 61 through the exposure mask 4 converges between the unit microlens array 62 and the unit microlens array 63 once, It forms on the exposure side surface 2a of the to-be-exposed material 2 located in the lower part. In other words, an inverted equal phase of the mask pattern 20 of the exposure mask 4 is formed between the unit microlens array 62 and the unit microlens array 63, and the exposure side surface 2a of the exposed material 2 is formed. Upright equilibrium of the mask pattern 20 is imaged on the surface.

A field stop 67 is disposed between the unit microlens array 62 and the unit microlens array 63, and an aperture stop 66 is disposed between the unit microlens array 63 and the unit microlens array 64. It is. The field stop 67 and the aperture stop 66 are provided for each microlens 60. In this embodiment, the field stop 67 is formed in a hexagon, and the field of view is narrowed to a hexagon at a position close to the image forming position. The aperture stop 66 is formed in a circular shape to define the numerical aperture NA of each microlens 60 and to shape the light transmission area of the microlens 60 in a circular shape.

The relationship between the field stop 67 and the aperture stop 66 is shown in FIG. 3 (b). As shown in FIG. 3 (b), the field stop 67 is formed as a hexagonal opening in the aperture stop 66. Therefore, the exposure light transmitted through the microlens 60 is irradiated only to the exposed side surface 2a of the exposed material 2 through the region enclosed by the hexagon shown in Fig. 3B.

The positional relationship of the field stop 67 in the microlens array 6 is shown in FIG. The microlens array 6 is configured to be movable by any driving means (not shown). The size of the microlens array 6 is substantially the same as the size of the irradiation area from the light source unit 3, and the microlens array 6 moves in the X-axis direction in synchronization with the light source unit 3 that irradiates the exposure light. The to-be-exposed material 2 is exposed through the exposure mask 4 and the moving microlens array 6. The plurality of microlenses 60 are arranged side by side in the Y-axis direction perpendicular to the X-axis to form a microlens array. A plurality of microlens rows are arranged in the X-axis direction.

The hexagon of each field stop 67 is composed of a rectangular portion 67a at the center, a triangular portion 67b at the left as viewed from the front, and a triangular portion 67c at the right as viewed from the front, as shown in FIG. have. The opening area of the left triangular part 67b and the right triangular part 67c is 1/2 of the opening area of the rectangular part 67a. In the X-axis direction, the plurality of microlens rows are arranged to be offset from each other such that the triangular portions 67b of the next microlens rows are positioned at positions corresponding to the triangular portions 67c of the microlens rows. In the present embodiment, the plurality of microlens rows are arranged in one group in three rows, and the first and fourth microlens rows have the same arrangement position of each microlens 60 in the Y-axis direction.

When the microlens array 6 moves upward along FIG. 4 along the X axis in synchronism with the light source portion 3 that irradiates the exposure light, the first micron is exposed on the exposed side surface 2a of the exposed material 2. The area exposed through the right triangular portion 67c of the field of view aperture 67 of the lens row is subsequently exposed through the left triangular portion 67b of the field of view aperture 67 of the second microlens row and exposed in the third microlens row. It doesn't work. The area exposed through the rectangular portion 67a of the field stop 67 of the first microlens row is not exposed in the second and third microlens rows. The area exposed through the left triangular portion 67b of the field of view aperture 67 of the first microlens row is not exposed in the second microlens row, and the right triangle portion 67c of the field of view aperture 67 of the third microlens row is exposed. Exposed through.

Therefore, the exposure-side surface 2a of the to-be-exposed material 2 is exposed through the two triangular portions 67b and 67c of the field stop 67 each time three rows of microlens rows pass through, or one rectangular portion. It exposes through 67a. Since the opening area of the left triangular part 67b and the right triangular part 67c is 1/2 of the opening area of the rectangular part 67a, each time the three rows of microlens rows pass, the exposed material 2 has a uniform amount of light. Will be exposed. Therefore, by configuring the microlens array 6 so that 3n (n is a natural number) microlens rows move on the exposure area 21 of the to-be-exposed material 2, the to-be-exposed material 2 can be exposed with a uniform amount of light. .

The microlens array 6 is used not only for the exposure process to the to-be-exposed material 2 but also for the position alignment of the exposure mask 4 and the to-be-exposed material 2 performed before an exposure process. In the alignment process of the exposure mask 4 and the exposure material 2, the microlens array 6 is arranged between the first position alignment mark 7 and the second position alignment mark 8 in the X-axis direction. It is configured to move. Thereby, at least one part of the 1st alignment mark 7 forms an image on the mask surface 4a of the side which opposes the to-be-exposed material 2 in the exposure mask 4 via the microlens array 6. Since the second positional alignment mark 8 is formed on the mask surface 4a, it is formed on at least a part of the first positional alignment mark 7 formed through the microlens array 6 and the mask surface 4a. The second positioning mark 8 is positioned on the same plane. Therefore, the imaging part 10 can image the 1st position alignment mark 7 and the 2nd position alignment mark 8 on the same plane.

5 (a) to 5 (c), the image of the first lens 7 for alignment alignment formed on the mask surface 4a through the microlens array 6 and the microlens array 6 is shown. Indicated. As described above, the field stop 67 is disposed between the unit microlens array 62 and the unit microlens array 63. Therefore, the image of the 1st alignment mark 7 image-formed on the mask surface 4a becomes an image corresponding to the hexagonal opening of the visual field stop 67. In the present embodiment, the microlens array 6 has the first position alignment mark 7 provided on the exposed material 2 and the second position provided on the exposure mask 4 while the imaging unit 10 is imaging. It moves between the alignment marks 8. The imaging unit 10 performs at least a portion of the first positioning mark 7 formed on the exposure mask 4 through the moving microlens array 6 together with the second positioning mark 8 a plurality of times. Take a picture.

FIG. 5A shows an image of the first position alignment mark 7 when the microlens array 6 is at the first position. In this case, the left edge is not formed on the mask surface 4a because the left edge is not located at the position corresponding to the opening of the field stop 67 when viewed from the front of the first positioning mark 7. In the first position, an image of the first position alignment mark 7 captured is shown on the right side of the microlens array 6. 5 (a) to 5 (c), only the image of the first position alignment mark 7 is shown in the picked-up image for explanation. The dashed-dotted line enclosing the partial image of the 1st alignment mark 7 in a rectangle is an imaginary line, and the position of the corresponding edge of the 1st alignment mark 7 is hypothetical for description. It is indicated by.

The microlens array 6 moves in the movement direction D1. FIG. 5B shows an image of the first position alignment mark 7 when the microlens array 6 is at the second position. In this case, since the right edge as seen from the front of the first positioning mark 7 is not at a position corresponding to the opening of the field stop 67, it is not formed on the mask surface 4a. However, the image of the first position alignment mark 7 picked up at the second position is the image of the first position alignment mark 7 first picked up at the first position by the image recognition unit 12 ( Iii) overlapped. This superimposed image is shown on the right side of the microlens array 6. Thus, the 1st position by superimposing the image of the 1st position alignment mark 7 imaged at the 2nd position on the image of the 1st position alignment mark 7 imaged at the 1st position. The left and right edges of the alignment mark 7 can be detected.

5C shows an image of the first position alignment mark 7 when the microlens array 6 moves again in the movement direction D1 and comes to the third position. The image of the first position alignment mark 7 picked up at the third position is superimposed on the images picked up at the first and second positions by the image recognizing unit 12. Thus, the partial image of the 1st alignment mark 7 imaged on the mask surface 4a through the microlens array 6 while moving the microlens array 6 is imaged multiple times, By generating a composite image in which a plurality of captured images are superimposed, the edges of the first positioning marks 7 can be detected more reliably. Therefore, the center position of the first position alignment mark 7 can be specified more accurately.

It is preferable that the partial image of the first alignment mark 7 forms an image at a different position every time it is picked up so that the edge of the first alignment mark 7 can be detected. Therefore, the spatial imaging intervals are intervals which do not become integer multiples of the arrangement pitch of the microlens arrays of the microlens array 6. The number of times of imaging is preferably at least the number of microlens rows constituting the microlens rows. As described above, in the present embodiment, since the microlens array 6 is formed of one group by three rows of microphone lenses, the number of times of imaging is preferably three or more times.

The composite image which superimposed three images picked up in FIG.5 (a)-(c) is shown to FIG.5 (d). The imaging unit 10 can simultaneously image a partial image of the first positioning mark 7 formed on the mask surface 4a and the second positioning mark 8 in the same image. . The 2nd position alignment mark 8 is formed in the mask surface 4a of the exposure mask 4, and the imaging part 10 performs imaging without moving during imaging. Therefore, the position of the 2nd position alignment mark 8 does not change in the image imaged multiple times.

In addition, in FIG.5 (d), as an example, the case where the 1st position alignment mark 7 shift | deviates to the right side downward from the front of the 2nd position alignment mark 8 is shown. As shown in Fig. 2 (c), in this embodiment, the position where the center of the first positioning mark 7 and the center of the second positioning mark 8 coincide is the exposure mask 4 and the pino. Correct placement of slag 2. From the composite image, the center of the first position alignment mark 7 can be specified to align the positions of the exposure mask 4 and the exposed material 2 so as to coincide with the center of the second position alignment mark 8. have.

Next, the operation method of the exposure apparatus 1 and the manufacturing method of the exposure material using the exposure apparatus 1 are demonstrated. 6 and 7 show the positional relationship of the respective constituent members in the exposure apparatus 1, and in FIG. 8, a process relating to the operation of the exposure apparatus 1 and the manufacturing method of the exposure material using the exposure apparatus 1 is shown. Indicated. In the exposure apparatus 1, alignment of the exposure mask 4 and the exposed material 2 is performed prior to the exposure to the exposed material 2. Before performing this position alignment process, as shown in Fig. 6A, the imaging unit 10 is disposed outside the exposure mask 4, and the microlens array 6 is connected to the exposed material 2; It is arrange | positioned by stopping between the masks 4 for exposure.

In order to image the first position alignment mark 7 and the second position alignment mark 8, the imaging section 10 moves in the movement direction D2, and as shown in FIG. It stops at the predetermined position for imaging on the 1st position alignment mark 7 and the 2nd position alignment mark 8 above. In this embodiment, the moving direction D2 of the imaging unit 10 is the same direction as the moving direction D1 of the microlens. Positioning of the exposure mask 4 and the exposed material 2 using the first positioning mark 7 and the second positioning mark 8 makes the exposure material 2 and the exposure mask 4 extremely high precision. It is for aligning in degrees (for example, about ± 1 micrometer). Therefore, this high-precision exposure mask 4 and the to-be-exposed material 2 before an image alignment are used for the image and exposure of the 1st position alignment mark 7 which image-form on the mask surface 4a via the microlens array 6. The position is arrange | positioned so that the 2nd position alignment mark 8 provided in the mask 4 may be captured by the imaging part 10 in the same image.

The light source unit 3 is disposed on the upper end of the mask 4 for exposure until the exposure to the target material 2 starts.

When the imaging unit 10 stops at a predetermined position for imaging, as shown in FIG. 6B, the microlens array 6 moves in the movement direction D1 and moves. The image pickup section 10 captures at least a portion of the first positioning marks 7 formed on the exposure mask 4 and the second positioning marks 8 provided on the exposure mask 4 by using the imaging unit 10. (FIG. 8, step S1). This imaging is performed a plurality of times as described above with reference to FIG. During imaging, the to-be-exposed material 2, the exposure mask 4, and the imaging section 10 are fixed to a predetermined position without moving.

As described above, the image recognizing unit 12 generates a synthesized image (see FIG. 5 (d)) in which a plurality of captured images are superimposed, and from this synthesized image, the captured first position alignment mark 7 At least a part of and the second position alignment mark 8 are recognized (FIG. 8, step S2). Subsequently, the positions of the exposed material 2 and the exposure mask 4 are aligned based on at least part of the recognized first alignment marks 7 and position information of the second alignment marks 8 (step S3). In the present embodiment, as described above, the position at which the centers of the first positioning marks 7 and the second positioning marks 8 coincide is the exact positional relationship between the exposure mask 4 and the exposed material.

Therefore, the center position of the 1st alignment mark 7 from at least one part of the 1st alignment mark 7 and the 2nd position alignment mark 8 in a composite image (refer FIG. 5 (d)). And the center position of the second position alignment mark 8 are specified by the image recognition unit 12. Then, the position alignment control unit 16 adjusts the position of the exposure mask 4 through any driving means so that the center of the first position alignment mark 7 and the second position alignment mark 8 coincide with each other. Adjusted.

When the alignment of the exposure mask 4 and the exposed material 2 is completed, the camera retraction movement control unit 17 does not interfere with the exposure to the exposed material 2 by the imaging unit 10 stopped at a predetermined position for imaging. ) Moves the imaging section 10 in a predetermined direction via any driving means (FIG. 8, step S4). The exposure start timing control unit 18 causes the irradiation of the exposure light to be started from the light source unit 3 before the movement of the imaging unit 10 is completed (step S5). While the to-be-exposed material 2 is being exposed, the to-be-exposed material 2 and the exposure mask 4 are fixed to the position aligned position without moving.

In step S4, the imaging unit 10 starts to move in the movement direction D3 as shown in Fig. 7C. Before the movement of the imaging part 10 is completed, the light source part 3 starts irradiation of the exposure light 5 simultaneously with the start of the movement of the imaging part 10, for example. The light source unit 3 moves in the movement direction D4 while irradiating the exposure light 5. At this time, the microlens array 6 moves in the movement direction D5 in synchronization with the light source unit 3. In this embodiment, the moving directions D3 to D5 are the same direction, and are opposite to the moving direction D1 of the microlens array 6 at the time of imaging. The imaging unit 10 moves to a predetermined retracted position outside the exposure mask 4 and stops, as shown in Fig. 7D. The light source unit 3 moves from one end to the other end of the exposure mask 4 together with the microlens array 6 while irradiating the exposure light 5 to the exposure area 21 of the exposed material 2. The exposure is completed.

In the above, with respect to the exposure apparatus 1 which concerns on 1st Embodiment, the position alignment and exposure of the one exposure area 21 formed in the to-be-exposed material 2 and the exposure mask 4 with respect to the exposure area 21 are taken as an example. Although it demonstrated, the exposure apparatus 1 is comprised so that the some exposure area 21 formed in the to-be-exposed material 2 can be exposed simultaneously. The exposure side surface 2a of the to-be-exposed material 2 in which several exposure area 21 is formed is shown in FIG.

Sixteen exposure areas 21a to 21p are formed on the exposed side surface 2a of the object to be exposed 2. The exposure areas 21a to 21p correspond to the exposure area 21 shown in Fig. 2B, respectively. Two first alignment marks 7 are disposed in each of the exposure areas 21a to 21p. The exposure apparatus 1 is comprised so that four exposure masks 4 may be simultaneously exposed with respect to four exposure areas among each exposure area 21a-21p, and the four exposure areas may be exposed at once. Four exposure masks 4 are supported by mask support means (not shown).

As an example, first, four exposure masks 4 are set for the exposure areas 21a, 21c, 21i, and 21k, and the positional alignment between each exposure mask 4 and the exposed material 2 (Fig. 8, steps S1 to 1). S3) is executed. When the alignment is completed, the four imaging units 10 arranged corresponding to the four exposure masks 4 respectively move simultaneously (Fig. 8, step S4). Before the movement of the imaging section 10 is completed, as an example, the exposure light 5 from the four light source sections 3 arranged in correspondence with the four exposure masks 4 simultaneously with the start of the movement of the imaging section 10, respectively. Irradiation is started simultaneously (FIG. 8, step S5), and each light source unit 3 irradiates the exposure light 5 to each of the exposure areas 21a, 21c, 21i, and 21k, with each corresponding microlens. It moves synchronously (refer FIG.7 (c)). When the exposure to each of the exposure areas 21a, 21c, 21i, and 21k is completed, any driving is performed so that the following exposure areas 21b, 21d, 21j, 21l correspond to the four exposure masks 4 supported. The exposed object 2 is moved in the X-axis direction (FIG. 1) by means (not shown).

When the alignment and exposure of each exposure mask 4 with respect to each exposure area 21b, 21d, 21j, 21l are completed, subsequent exposure areas 21f, 21h, 21n are applied to the four exposure masks 4 continuously. , 21p, moves the to-be-exposed material 2 to the Y-axis direction (the direction perpendicular | vertical to the paper surface in FIG. 1). When the alignment and exposure of each exposure mask 4 with respect to each exposure area 21f, 21h, 21n, 21p are completed, the next exposure area 21e, 21g, 21m is continued with respect to the four exposure masks 4. , 21o) moves the exposed material 2 in the X-axis direction so as to correspond thereto. When the alignment and exposure of each exposure mask 4 with respect to each exposure area 21e, 21g, 21m, 21o are completed, exposure to all the exposure area 21a-21p is completed.

The exposure apparatus 1 according to the first embodiment has various advantages. In general, in the proximity exposure system in which the exposure mask is placed close to the exposed material, the distance between the exposure mask and the exposed material can be approximated to about 200 µm. However, in the case of the exposure apparatus 1 which has the microlens array 6 between the exposure mask 4 and the to-be-exposed material 2, the distance of the exposure mask 4 and the to-be-exposed material 2 cannot be made close. As mentioned above, the distance between the exposure mask 4 and the to-be-exposed material 2 needs to be about 5 to 15 mm as an example. In this case, considering the field of view and the alignment accuracy, the lens magnification of the imaging unit 10 is required about four times as an example. Therefore, the distance of 5-15 mm produces the shift | offset | difference of the imaging position of 5-15 mm x 4 <2> = 80-240 mm.

However, in the exposure apparatus 1 according to the first embodiment, at least part of the first alignment marks 7 captured by the imaging unit 10 passes through the microlens array 6 to the exposure mask 4. It was resolved to. Accordingly, the imaging unit 10 includes the second position alignment mark 8 provided on the exposure mask 4 and the first position alignment mark 7 formed on the exposure mask 4 through the microlens array 6. At least a part of can be imaged on the same plane. Therefore, the shift | offset | difference of the imaging position of the 1st position alignment mark 7 and the 2nd position alignment mark 8 resulting from the distance between the to-be-exposed material 2 and the exposure mask 4 can be eliminated.

In the case of the exposure apparatus 1, the method of adjusting the length of the optical path with respect to an imaging object was not employ | adopted in order to eliminate the said shift of the said imaging position. Accordingly, the optical surface 11 of the imaging section 10 for imaging the first positioning mark 7 and the second positioning mark 8 is out of a predetermined angle, and thus the mask surface 4a of the exposure mask 4. Even when tilted obliquely with respect to the relative position between the first position alignment mark 7 and the second position alignment mark 8 picked up by the imaging unit 10 and recognized by the image recognition unit 12 Does not change. Therefore, the relative position of the mask 4 for exposure and the to-be-exposed material 2 can be specified more correctly.

In addition, in the case of the exposure apparatus 1, in order to image the 1st alignment mark 7 and the 2nd alignment mark 8, the two optical paths of different optical path lengths, and the optical path length adjustment with respect to each optical path are carried out. There is no need to provide a means, and furthermore, there is no need to arrange the alignment reticle on the optical axis of each optical path. Therefore, a complicated mechanism that requires cost is unnecessary for the alignment of the exposure mask 4 and the exposed material 2.

In the exposure apparatus 1, the imaging unit 10 is a single camera, and the first position alignment mark 7 and the second position alignment formed in the exposure mask 4 through the microlens array 6. The dragon mark 8 is simultaneously imaged in the same image. Accordingly, the first position alignment mark 7 and the second position alignment mark are compared with the case where the first position alignment mark 7 and the second position alignment mark 8 are respectively imaged separately by different cameras. The relative positional relationship of the marks 8 can be specified more accurately.

Furthermore, in the exposure apparatus 1 which concerns on 1st Embodiment, after imaging is complete | finished, the imaging part 10 will move to a predetermined direction so that the exposure to the to-be-exposed material 2 may not be interrupted, and the imaging part 10 Before the movement of is completed, the exposure start timing control unit 18 is configured to start irradiation of the exposure light 5 from the light source unit 3 with respect to the position-aligned exposed material 2 and the exposure mask 4. have. Therefore, since exposure starts before the movement of the imaging part 10 is completed, the delay of the working time using the exposure apparatus 1 can be eliminated.

Moreover, since the light source part 3 is comprised so that the exposure light 5 may be irradiated while moving, it is possible to use a smaller sized light source, and the size of the exposure apparatus 1 can be miniaturized. In addition, since the microlens array 6 is configured to be movable between the exposed material 2 and the exposure mask 4, the imaging of the first alignment mark 7 and the exposure of the exposed material 2 are performed. It can be implemented using a small and common microlens array 6. Since the large sized microlens array 6 is expensive, imaging of the first positioning mark 7 and exposure of the exposed material 2 can be made possible by using a smaller and common microlens array 6. As a result, the manufacturing cost of the exposure apparatus 1 can be reduced.

In the exposure apparatus 1, the imaging unit 10 aligns at least a part of the first position alignment marks 7 formed in the exposure mask 4 through the moving microlens array 6 in a second position alignment. It captures several times with the mark 8 for dragons. The image recognition unit 12 generates a synthesized image in which images captured multiple times are superimposed. In this way, the positional information of the first alignment mark 7 is superimposed by superimposing a partial image of the first alignment mark 7 formed on the exposure mask 4 through the microlens array 6 as described above. You can get more. Accordingly, the position of the first position alignment mark 7 formed by the microlens array 6 can be more surely specified.

[Other embodiment]

As mentioned above, although embodiment of this invention was described, this invention is not limited to embodiment mentioned above, A various deformation | transformation and a change are possible based on the technical idea of this invention. For example, in the exposure apparatus 1 which concerns on 1st Embodiment, although several exposure mask 4 is arrange | positioned simultaneously in several exposure area 21a-21p, it is not limited to this. It is also possible to use a single mask for exposure 4. Moreover, in the exposure apparatus 1 which concerns on 1st Embodiment, although the some exposure area | region 21a-21p is formed in the to-be-exposed material 2, it is not limited to this. A single exposure area 21 may be formed in the exposed material 2.

The shapes of the first positioning marks 7 and the second positioning marks 8 are not limited to those shown in Fig. 2C. The mark of any shape may be sufficient as it is a mark which can specify the position of the 1st position alignment mark 7 and the 2nd position alignment mark 8.

The number of the first positioning marks 7 and the second positioning marks 8 is preferably two or more for the exposure area in order to maintain the accuracy of the alignment, but the number is not limited. The arrangement position of the 1st position alignment mark 7 and the 2nd position alignment mark 8 is not limited to the position shown to FIG. 2 (a) and FIG. 2 (b). For example, four 1st positioning marks 7 may be arrange | positioned with respect to each exposure area | region, and each 1st positioning mark 7 may be arrange | positioned at four corners of each exposure area exterior. In this case, it is preferable to arrange | position the four 2nd position alignment marks 8 in the exposure mask 4 in the position corresponding to each 1st position alignment mark 7, respectively.

In the first embodiment, the imaging unit 10 is configured to move in a predetermined direction after the alignment between the exposure mask 4 and the exposed material 2 is completed, but is not limited thereto. The imaging unit 10 may start the movement before the position alignment between the exposure mask 4 and the exposed material 2 is completed when the imaging is completed. In this case, the exposure start timing control unit 18 controls the exposure light 5 from the light source unit 3 after the position alignment between the exposure mask 4 and the exposed material 2 is completed and before the movement of the imaging unit 10 is completed. To begin investigation. If the movement of the imaging part 10 is completed, irradiation of the exposure light 5 from the light source part 3 can be started. Therefore, the irradiation start of the exposure light 5 may be before the start of the movement of the imaging unit 10, may be coincident with the start of the movement of the imaging unit 10, after the start of the movement of the imaging unit 10, and the imaging unit ( It may be before the movement of 10) is completed.

In the first embodiment, the imaging section 10 uses at least a portion of the first position alignment mark 7 formed in the exposure mask 4 through the moving microlens array 6 for the second position alignment. Although it is comprised so that imaging may be performed multiple times with the mark 8, it is not limited to this. The alignment of the exposure mask 4 and the exposed material 2 may be performed based on the positional information of the first alignment mark 7 and the second alignment mark 8 acquired by one imaging. In addition, image capturing can be performed continuously by making the image capturing interval extremely short (30 times in one second as an example), and a composite image obtained by superimposing images continuously captured can also be generated.

In the first embodiment, the imaging unit 10 is a CCD camera employing a coaxial fall-off illumination system using a built-in camera light source, but is not limited thereto. The camera light source may not be built in a CCD camera, and a single light source may be provided as a separate camera light source. It is also possible to employ an illumination method other than the coaxial fall illumination method. As the imaging unit 10, a CMOS (complementary metal oxide semiconductor) camera may be used in place of the CCD camera.

1 exposure device
2 exposed material
3 light source
4 Exposure Mask
5 Exposure light
6 microlens array
7 1st position alignment mark
8 2nd position alignment mark
10 Imaging Section
12 Image Recognition
16 position alignment control
18 Exposure start timing control

Claims (8)

A light source for irradiating the exposure light to the target material;
An exposure mask supported between the light source and the exposed material;
A microlens array disposed between the exposed material and the exposure mask;
In order to align the position of the exposed material and the exposure mask by using the first position alignment mark provided on the exposed material and the second position alignment mark provided on the exposure mask, the exposure mask is connected to the exposure mask through the microlens array. An imaging unit which picks up at least a portion of the formed first alignment marks and the second alignment marks, and moves in a predetermined direction so as not to disturb exposure to the exposed material when the imaging is completed;
An image recognizing unit recognizing at least a portion of the first positioning mark and the second positioning mark captured by the imaging unit;
A position alignment control unit for aligning positions of the exposed material and the exposure mask based on at least a portion of the first position alignment mark recognized by the image recognition unit and position information of the second position alignment mark;
Exposure start timing control part which causes irradiation of the exposure light from the light source to begin before the movement of the image pickup part is completed.
And
The microlens array moves between the first position alignment mark provided on the exposed material and the second position alignment mark provided on the exposure mask while the imaging unit is capturing an image,
The image pickup unit picks up at least a portion of the first alignment mark formed in the exposure mask through the moving microlens array multiple times or continuously together with the second alignment mark,
And the image recognition unit generates a composite image for specifying the position of the first alignment mark relative to the second alignment mark by superimposing the images picked up multiple times or continuously. Exposure apparatus.
The method of claim 1,
And the light source irradiates the exposure light while moving.
The method of claim 2,
The microlens array moves in one direction between the first alignment mark provided on the exposed material and the second alignment mark provided on the exposure mask while the imaging unit is capturing, and the light source is moved in the furnace. While irradiating light light, the exposure apparatus moves together with the light source in the reverse direction of the one direction.
delete An exposure material is manufactured by using an exposure apparatus including a light source for irradiating exposure light to an exposure material, an exposure mask supported between the light source and the exposure material, and a microlens array disposed between the exposure material and the exposure mask. As an exposure material manufacturing method to
In order to align the position of the exposed material and the exposure mask by using the first position alignment mark provided on the exposed material and the second position alignment mark provided on the exposure mask, the exposure mask is connected to the exposure mask through the microlens array. An imaging step of capturing at least a portion of the formed first alignment marks and a second alignment mark of the exposure mask;
An image recognition step of recognizing at least a portion of the first position alignment mark and the second position alignment mark picked up by the image pickup step;
A position alignment step of aligning the to-be-exposed material and the exposure mask by the position alignment control unit based on at least a part of the first position alignment mark recognized by the image recognition step and position information of the second position alignment mark;
An imaging section moving step of moving the imaging section in a predetermined direction so as not to disturb the exposure to the exposed material after the imaging in the imaging step is finished;
Before the movement of the imaging unit in the imaging unit movement step is completed, the exposure start timing control unit starts irradiation of the exposure light from the light source to the exposed material and the exposure mask that are aligned by the position alignment step. Exposure start step to ensure
Including,
In the imaging step, the microlens array is moved between the first alignment mark provided on the exposed material and the second alignment mark provided on the exposure mask, and the exposure is performed through the microlens array. At least a portion of the first alignment mark formed in the mask is imaged by the imaging unit a plurality of times or continuously with the second alignment mark,
In the image recognition step, the image recognition unit generates a composite image for specifying the position of the first position alignment mark relative to the second position alignment mark by superimposing the images picked up multiple times or continuously. An exposure material manufacturing method characterized by the above-mentioned.
The method of claim 5,
And an exposure step of irradiating the exposure light while the light source is moving.
The method of claim 6,
In the imaging step, the microlens array is moved in one direction between the first alignment mark provided on the exposed material and the second alignment mark provided on the exposure mask,
In the exposing step, the microlens array is moved in the reverse direction of the one direction with the light source.
delete
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JP2012001454A JP5842251B2 (en) 2012-01-06 2012-01-06 Exposure apparatus and exposed material manufacturing method
JPJP-P-2012-001454 2012-01-06
PCT/JP2013/050011 WO2013103152A1 (en) 2012-01-06 2013-01-04 Light exposure device and method for manufacturing exposed material

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CN104024943B (en) 2016-03-02

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