KR102017092B1 - 용액-처리가능한 텅스텐 산화물 버퍼 층 및 이것을 포함하는 전자장치 - Google Patents

용액-처리가능한 텅스텐 산화물 버퍼 층 및 이것을 포함하는 전자장치 Download PDF

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KR102017092B1
KR102017092B1 KR1020147025115A KR20147025115A KR102017092B1 KR 102017092 B1 KR102017092 B1 KR 102017092B1 KR 1020147025115 A KR1020147025115 A KR 1020147025115A KR 20147025115 A KR20147025115 A KR 20147025115A KR 102017092 B1 KR102017092 B1 KR 102017092B1
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tungsten oxide
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KR20140125842A (ko
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노만 알베르트 뤼힝거
사무엘 클라우드 하림
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아반타마 아게
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KR1020147025115A 2012-02-22 2013-02-15 용액-처리가능한 텅스텐 산화물 버퍼 층 및 이것을 포함하는 전자장치 Active KR102017092B1 (ko)

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Application Number Priority Date Filing Date Title
EP12001157.2A EP2631008A1 (en) 2012-02-22 2012-02-22 Solution-processable tungsten oxide buffer layers and electronics comprising same
EP12001157.2 2012-02-22
PCT/CH2013/000032 WO2013123605A1 (en) 2012-02-22 2013-02-15 Solution-processable tungsten oxide buffer layers and electronics comprising same

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KR20140125842A KR20140125842A (ko) 2014-10-29
KR102017092B1 true KR102017092B1 (ko) 2019-09-02

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US (1) US9683111B2 (https=)
EP (2) EP2631008A1 (https=)
JP (1) JP6204378B2 (https=)
KR (1) KR102017092B1 (https=)
CN (1) CN104245124B (https=)
WO (1) WO2013123605A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12577457B2 (en) 2020-12-29 2026-03-17 Samsung Display Co., Ltd. Nanoparticle ink composition, light-emitting device, and method of manufacturing the light-emitting device

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014103290A (ja) * 2012-11-21 2014-06-05 Konica Minolta Inc 有機エレクトロルミネッセンス素子、有機エレクトロルミネッセンス素子の製造方法及び金属酸化物粒子含有組成物
FR3013719B1 (fr) * 2013-11-26 2018-01-12 Commissariat A L'energie Atomique Et Aux Energies Alternatives Encre pour former des couches p dans des dispositifs electroniques organiques
EP3328961B1 (en) 2015-07-31 2019-04-03 Avantama AG Luminescent crystals and manufacturing thereof
WO2019030269A1 (en) 2017-08-09 2019-02-14 Basf Se COMPOSITIONS COMPRISING DISPERSED NANOPARTICLES OF ELECTROCHROMIC OXIDE
CN108003664B (zh) * 2017-12-04 2020-09-11 瑞彩科技股份有限公司 一种吸收红外的光热效应珠光颜料及其制备方法
WO2022027017A1 (en) * 2020-07-27 2022-02-03 University Of Delaware Method to thermo-reversibly control light and heat flow with bicontinuous micro-domain
JP7379306B2 (ja) * 2020-09-28 2023-11-14 東芝マテリアル株式会社 エレクトロクロミック素子

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012017502A1 (ja) 2010-08-06 2012-02-09 パナソニック株式会社 有機el素子およびその製造方法

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5165992A (en) * 1991-07-02 1992-11-24 Hoya Corporation Hard coating film and optical elements having such coating film
JPH05331304A (ja) * 1992-06-04 1993-12-14 Nikon Corp コーティング組成物およびそれで被覆されたレンズ
JP2611093B2 (ja) * 1992-07-07 1997-05-21 ホーヤ株式会社 硬化膜を有する光学部材
JP3201654B2 (ja) * 1992-07-07 2001-08-27 ホーヤ株式会社 コーティング組成物
JP4315642B2 (ja) * 2002-05-17 2009-08-19 旭化成ケミカルズ株式会社 抽出方法
US7708974B2 (en) * 2002-12-10 2010-05-04 Ppg Industries Ohio, Inc. Tungsten comprising nanomaterials and related nanotechnology
JP2007094019A (ja) * 2005-09-29 2007-04-12 Kinki Sharyo Co Ltd 広告吊り具
US20090320894A1 (en) 2006-02-17 2009-12-31 Fabio Angiuli Method for preparing nanocrystalline transparent films of tungsten oxide
US20070290604A1 (en) 2006-06-16 2007-12-20 Matsushita Electric Industrial Co., Ltd. Organic electroluminescent device and method of producing the same
JP2008041894A (ja) * 2006-08-04 2008-02-21 Matsushita Electric Ind Co Ltd 有機エレクトロルミネッセント素子およびその製造方法
EP2048116A1 (en) * 2007-10-09 2009-04-15 ChemIP B.V. Dispersion of nanoparticles in organic solvents
WO2009110234A1 (ja) 2008-03-04 2009-09-11 株式会社 東芝 水系分散液とそれを用いた塗料、膜および製品
JP5104538B2 (ja) * 2008-05-16 2012-12-19 大日本印刷株式会社 有機エレクトロルミネッセンス素子用基板および有機エレクトロルミネッセンス素子ならびにそれらの製造方法
EP2360220B1 (en) * 2008-11-13 2015-03-18 Sumitomo Metal Mining Co., Ltd. Infrared blocking particle, method for producing the same, infrared blocking particle dispersion using the same, and infrared blocking base
JP2010270191A (ja) 2009-05-20 2010-12-02 Tokuyama Corp コーティング組成物および光学物品
EP2781562B1 (en) * 2013-03-20 2016-01-20 Agfa-Gevaert A method to prepare a metallic nanoparticle dispersion

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012017502A1 (ja) 2010-08-06 2012-02-09 パナソニック株式会社 有機el素子およびその製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12577457B2 (en) 2020-12-29 2026-03-17 Samsung Display Co., Ltd. Nanoparticle ink composition, light-emitting device, and method of manufacturing the light-emitting device

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CN104245124A (zh) 2014-12-24
JP6204378B2 (ja) 2017-09-27
EP2817091A1 (en) 2014-12-31
WO2013123605A1 (en) 2013-08-29
CN104245124B (zh) 2017-08-29
US20150064446A1 (en) 2015-03-05
EP2631008A1 (en) 2013-08-28
US9683111B2 (en) 2017-06-20
EP2817091B1 (en) 2016-11-30
KR20140125842A (ko) 2014-10-29
JP2015517198A (ja) 2015-06-18

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