KR101996607B1 - 에피택셜 리프트 오프 및 냉간 용접 결합된 반도체 태양 전지를 사용한 일체형 태양열 집열기 - Google Patents

에피택셜 리프트 오프 및 냉간 용접 결합된 반도체 태양 전지를 사용한 일체형 태양열 집열기 Download PDF

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KR101996607B1
KR101996607B1 KR1020147002202A KR20147002202A KR101996607B1 KR 101996607 B1 KR101996607 B1 KR 101996607B1 KR 1020147002202 A KR1020147002202 A KR 1020147002202A KR 20147002202 A KR20147002202 A KR 20147002202A KR 101996607 B1 KR101996607 B1 KR 101996607B1
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substrate
thin film
solar cell
metal
film solar
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KR20140043805A (ko
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스티븐 알 포레스트
크리스토퍼 카일 렌쇼
마이클 스루트스키
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더 리젠츠 오브 더 유니버시티 오브 미시간
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/40—Optical elements or arrangements
    • H10F77/413—Optical elements or arrangements directly associated or integrated with the devices, e.g. back reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • H10F10/142—Photovoltaic cells having only PN homojunction potential barriers comprising multiple PN homojunctions, e.g. tandem cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • H10F10/144—Photovoltaic cells having only PN homojunction potential barriers comprising only Group III-V materials, e.g. GaAs,AlGaAs, or InP photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/30—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/127—The active layers comprising only Group III-V materials, e.g. GaAs or InP
    • H10F71/1272—The active layers comprising only Group III-V materials, e.g. GaAs or InP comprising at least three elements, e.g. GaAlAs or InGaAsP
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/139—Manufacture or treatment of devices covered by this subclass using temporary substrates
    • H10F71/1395—Manufacture or treatment of devices covered by this subclass using temporary substrates for thin-film devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/124—Active materials comprising only Group III-V materials, e.g. GaAs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/124—Active materials comprising only Group III-V materials, e.g. GaAs
    • H10F77/1248—Active materials comprising only Group III-V materials, e.g. GaAs having three or more elements, e.g. GaAlAs, InGaAs or InGaAsP
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/169—Thin semiconductor films on metallic or insulating substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/169—Thin semiconductor films on metallic or insulating substrates
    • H10F77/1698—Thin semiconductor films on metallic or insulating substrates the metallic or insulating substrates being flexible
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/11—Separation of active layers from substrates
    • H10P95/112—Separation of active layers from substrates leaving a reusable substrate, e.g. epitaxial lift off
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/52—PV systems with concentrators
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/544—Solar cells from Group III-V materials

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  • Photovoltaic Devices (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Sustainable Energy (AREA)
  • Sustainable Development (AREA)
KR1020147002202A 2011-07-06 2012-07-06 에피택셜 리프트 오프 및 냉간 용접 결합된 반도체 태양 전지를 사용한 일체형 태양열 집열기 Expired - Fee Related KR101996607B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201161505014P 2011-07-06 2011-07-06
US61/505,014 2011-07-06
PCT/US2012/045778 WO2013006803A2 (en) 2011-07-06 2012-07-06 Integrated solar collectors using epitaxial lift off and cold weld bonded semiconductor solar cells

Publications (2)

Publication Number Publication Date
KR20140043805A KR20140043805A (ko) 2014-04-10
KR101996607B1 true KR101996607B1 (ko) 2019-10-01

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KR1020147002202A Expired - Fee Related KR101996607B1 (ko) 2011-07-06 2012-07-06 에피택셜 리프트 오프 및 냉간 용접 결합된 반도체 태양 전지를 사용한 일체형 태양열 집열기

Country Status (11)

Country Link
US (3) US20130037095A1 (https=)
EP (1) EP2729968B1 (https=)
JP (1) JP6312257B2 (https=)
KR (1) KR101996607B1 (https=)
CN (2) CN106098842B (https=)
AU (2) AU2012280933A1 (https=)
CA (1) CA2840968A1 (https=)
ES (1) ES2834435T3 (https=)
HK (1) HK1197315A1 (https=)
TW (1) TWI693722B (https=)
WO (1) WO2013006803A2 (https=)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10741712B2 (en) * 2012-02-15 2020-08-11 Alta Devices, Inc. Photovoltaic module containing shingled photovoltaic tiles and fabrication processes thereof
US9087905B2 (en) * 2012-10-03 2015-07-21 International Business Machines Corporation Transistor formation using cold welding
US9666739B2 (en) * 2013-06-28 2017-05-30 Sunpower Corporation Photovoltaic cell and laminate metallization
KR20160084858A (ko) * 2013-11-11 2016-07-14 더 리젠츠 오브 더 유니버시티 오브 미시간 에픽택셜 리프트 오프 공정을 위한 열적 보조 냉간 용접 본딩
US10637391B2 (en) 2013-11-29 2020-04-28 The Regents Of The University Of Michigan Autonomous solar tracking in flat-plate photovoltaic panels using kirigami-inspired microstructures
WO2015156874A2 (en) 2014-01-15 2015-10-15 The Regents Of The Univerity Of Michigan Integration of epitaxial lift-off solar cells with mini-parabolic concentrator arrays via printing method
WO2015156871A2 (en) * 2014-01-15 2015-10-15 Forrest Stephen R Forrest Non-destructive wafer recycling for epitaxial lift-off thin-film device using a superlattice epitaxial layer
US10141465B2 (en) 2014-04-04 2018-11-27 The Regents Of The University Of Michigan Epitaxial lift-off processed GaAs thin-film solar cells integrated with non-tracking mini-compound parabolic concentrators
JP2017510085A (ja) * 2014-04-04 2017-04-06 ザ リージェンツ オブ ザ ユニヴァシティ オブ ミシガン 非トラッキングミニ複合放物面集光器と集積化されたエピタキシャルリフトオフ処理されたＧａＡｓ薄膜太陽電池
WO2015168272A1 (en) 2014-04-29 2015-11-05 The Regents Of The University Of Michigan Flexible antenna integrated with an array of solar cells
USRE49869E1 (en) * 2015-02-10 2024-03-12 iBeam Materials, Inc. Group-III nitride devices and systems on IBAD-textured substrates
WO2016138514A1 (en) * 2015-02-27 2016-09-01 The Regents Of The University Of Michigan Mechanically stacked tandem photovoltaic cells with intermediate optical filters
KR102533932B1 (ko) 2015-03-18 2023-05-17 더 리젠츠 오브 더 유니버시티 오브 미시간 사전 패터닝된 메사들을 통한 스트레인 경감 에피택셜 리프트-오프
KR101743017B1 (ko) 2015-05-19 2017-06-05 한국과학기술연구원 고속 에피택셜 리프트오프와 iii-v족 직접 성장용 템플릿을 이용한 반도체 소자의 제조 방법 및 이에 의해 제조된 반도체 소자
BR112018005784B1 (pt) * 2015-09-24 2022-10-11 Hunt Perovskite Technologies, L.L.C. Sistema e método para testar degradação de dispositivo fotossensível
US20180233612A1 (en) 2015-09-28 2018-08-16 Sharp Kabushiki Kaisha Thin-film compound photovoltaic cell, method for manufacturing thin-film compound photovoltaic cell, thin-film compound photovoltaic cell array, and method for manufacturing thin-film compound photovoltaic cell array
FR3047350B1 (fr) * 2016-02-03 2018-03-09 Soitec Substrat avance a miroir integre
KR102559479B1 (ko) * 2018-03-16 2023-07-26 상라오 징코 솔라 테크놀러지 디벨롭먼트 컴퍼니, 리미티드 화합물 반도체 태양전지의 제조 방법
DE102018002426A1 (de) * 2018-03-26 2019-09-26 Azur Space Solar Power Gmbh Stapelförmiges III-V-Halbleiterzeug und Herstellungsverfahren
KR20200021772A (ko) * 2018-08-21 2020-03-02 엘지전자 주식회사 화합물 반도체 태양전지 및 이의 제조 방법
KR20200023068A (ko) * 2018-08-24 2020-03-04 엘지전자 주식회사 화합물 반도체 태양전지의 제조 방법
US11137784B2 (en) * 2018-09-07 2021-10-05 The George Washington University Linear voltage regulator circuit incorporating light emitting and photovoltaic devices
JP7316638B2 (ja) * 2019-05-15 2023-07-28 パナソニックＩｐマネジメント株式会社 樹脂組成物、樹脂被覆基板および素子チップの製造方法
CN115461581A (zh) * 2020-05-06 2022-12-09 3M创新有限公司 太阳能吸收和辐射冷却制品和方法
EP4218060A4 (en) * 2020-09-23 2024-09-25 Antora Energy, Inc. Structures and methods for producing an optoelectronic device
US12424965B2 (en) 2022-06-02 2025-09-23 Antora Energy, Inc. Layered window in thermophotovoltaic devices

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090038678A1 (en) 2007-07-03 2009-02-12 Microlink Devices, Inc. Thin film iii-v compound solar cell
WO2010026415A2 (en) * 2008-09-04 2010-03-11 Barry Clive Photovoltaic cell apparatus
JP2010120088A (ja) 2009-12-24 2010-06-03 Seiko Epson Corp 接合体の形成方法および接合体
WO2011066029A2 (en) * 2009-09-10 2011-06-03 The Regents Of The University Of Michigan Methods of preparing flexible photovoltaic devices using epitaxial liftoff, and preserving the integrity of growth substrates used in epitaxial growth

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5324365A (en) * 1991-09-24 1994-06-28 Canon Kabushiki Kaisha Solar cell
US5288337A (en) * 1992-06-25 1994-02-22 Siemens Solar Industries, L.P. Photovoltaic module with specular reflector
JP3467153B2 (ja) * 1996-08-30 2003-11-17 株式会社リコー 半導体素子
US6440769B2 (en) * 1999-11-26 2002-08-27 The Trustees Of Princeton University Photovoltaic device with optical concentrator and method of making the same
US6333458B1 (en) 1999-11-26 2001-12-25 The Trustees Of Princeton University Highly efficient multiple reflection photosensitive optoelectronic device with optical concentrator
CN2613726Y (zh) * 2003-04-17 2004-04-28 北京工业大学 复合抛物面聚光热电综合利用装置
DE102004023856B4 (de) * 2004-05-12 2006-07-13 Rwe Space Solar Power Gmbh Solarzelle mit integrierter Schutzdiode und zusätzlich auf dieser angeordneten Tunneldiode
US7319189B2 (en) * 2004-10-27 2008-01-15 Universite De Liege Solar concentrator
HRPK20050434B3 (en) * 2005-05-16 2008-06-30 Urli Natko Stationary photovoltaic module with low concentration ratio of solar radiation
CN101375111A (zh) * 2006-01-17 2009-02-25 索利安特能源公司 聚光式太阳能电池板及相关系统和方法
US7638708B2 (en) * 2006-05-05 2009-12-29 Palo Alto Research Center Incorporated Laminated solar concentrating photovoltaic device
US20100047959A1 (en) * 2006-08-07 2010-02-25 Emcore Solar Power, Inc. Epitaxial Lift Off on Film Mounted Inverted Metamorphic Multijunction Solar Cells
US20110108081A1 (en) * 2006-12-20 2011-05-12 Jds Uniphase Corporation Photovoltaic Power Converter
WO2009108896A1 (en) * 2008-02-27 2009-09-03 Brilliant Film, Llc Concentrators for solar power generating systems
US20090283133A1 (en) * 2008-05-14 2009-11-19 3M Innovative Properties Company Solar concentrating mirror
US9523516B2 (en) 2008-12-30 2016-12-20 3M Innovative Properties Company Broadband reflectors, concentrated solar power systems, and methods of using the same
AU2009230775B1 (en) * 2009-10-26 2010-03-04 Mip, Llc Asymmetric parabolic compound concentrator with photovoltaic cells
JP5215284B2 (ja) * 2009-12-25 2013-06-19 シャープ株式会社 多接合型化合物半導体太陽電池
CN102082195B (zh) * 2010-09-30 2012-03-07 南通大学 自动跟踪双抛物面聚光发电供热系统
US9412960B2 (en) 2011-04-18 2016-08-09 The Regents Of The University Of Michigan Light trapping architecture for photovoltaic and photodector applications

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090038678A1 (en) 2007-07-03 2009-02-12 Microlink Devices, Inc. Thin film iii-v compound solar cell
WO2010026415A2 (en) * 2008-09-04 2010-03-11 Barry Clive Photovoltaic cell apparatus
WO2011066029A2 (en) * 2009-09-10 2011-06-03 The Regents Of The University Of Michigan Methods of preparing flexible photovoltaic devices using epitaxial liftoff, and preserving the integrity of growth substrates used in epitaxial growth
JP2010120088A (ja) 2009-12-24 2010-06-03 Seiko Epson Corp 接合体の形成方法および接合体

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CN103890974A (zh) 2014-06-25
TWI693722B (zh) 2020-05-11
WO2013006803A8 (en) 2013-06-06
KR20140043805A (ko) 2014-04-10
JP2014523132A (ja) 2014-09-08
WO2013006803A2 (en) 2013-01-10
JP6312257B2 (ja) 2018-04-18
US12132127B2 (en) 2024-10-29
EP2729968B1 (en) 2020-09-02
CN106098842B (zh) 2018-12-18
CA2840968A1 (en) 2013-01-10
HK1197315A1 (en) 2015-01-09
ES2834435T3 (es) 2021-06-17
US20130037095A1 (en) 2013-02-14
EP2729968A2 (en) 2014-05-14
TW201320369A (zh) 2013-05-16
WO2013006803A3 (en) 2013-05-10
AU2012280933A1 (en) 2014-01-23
AU2016200455A1 (en) 2016-02-18
CN106098842A (zh) 2016-11-09
US20160141431A1 (en) 2016-05-19
US20220013672A1 (en) 2022-01-13

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