KR101996607B1 - 에피택셜 리프트 오프 및 냉간 용접 결합된 반도체 태양 전지를 사용한 일체형 태양열 집열기 - Google Patents

에피택셜 리프트 오프 및 냉간 용접 결합된 반도체 태양 전지를 사용한 일체형 태양열 집열기 Download PDF

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KR101996607B1
KR101996607B1 KR1020147002202A KR20147002202A KR101996607B1 KR 101996607 B1 KR101996607 B1 KR 101996607B1 KR 1020147002202 A KR1020147002202 A KR 1020147002202A KR 20147002202 A KR20147002202 A KR 20147002202A KR 101996607 B1 KR101996607 B1 KR 101996607B1
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substrate
thin film
solar cell
metal
film solar
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KR20140043805A (ko
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스티븐 알 포레스트
크리스토퍼 카일 렌쇼
마이클 스루트스키
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더 리젠츠 오브 더 유니버시티 오브 미시간
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/40—Optical elements or arrangements
    • H10F77/413—Optical elements or arrangements directly associated or integrated with the devices, e.g. back reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • H10F10/142—Photovoltaic cells having only PN homojunction potential barriers comprising multiple PN homojunctions, e.g. tandem cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • H10F10/144—Photovoltaic cells having only PN homojunction potential barriers comprising only Group III-V materials, e.g. GaAs,AlGaAs, or InP photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/30—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/127—The active layers comprising only Group III-V materials, e.g. GaAs or InP
    • H10F71/1272—The active layers comprising only Group III-V materials, e.g. GaAs or InP comprising at least three elements, e.g. GaAlAs or InGaAsP
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/139—Manufacture or treatment of devices covered by this subclass using temporary substrates
    • H10F71/1395—Manufacture or treatment of devices covered by this subclass using temporary substrates for thin-film devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/124—Active materials comprising only Group III-V materials, e.g. GaAs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/124—Active materials comprising only Group III-V materials, e.g. GaAs
    • H10F77/1248—Active materials comprising only Group III-V materials, e.g. GaAs having three or more elements, e.g. GaAlAs, InGaAs or InGaAsP
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/169—Thin semiconductor films on metallic or insulating substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/169—Thin semiconductor films on metallic or insulating substrates
    • H10F77/1698—Thin semiconductor films on metallic or insulating substrates the metallic or insulating substrates being flexible
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/11—Separation of active layers from substrates
    • H10P95/112—Separation of active layers from substrates leaving a reusable substrate, e.g. epitaxial lift off
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/52—PV systems with concentrators
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/544—Solar cells from Group III-V materials

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  • Photovoltaic Devices (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Sustainable Energy (AREA)
  • Sustainable Development (AREA)
KR1020147002202A 2011-07-06 2012-07-06 에피택셜 리프트 오프 및 냉간 용접 결합된 반도체 태양 전지를 사용한 일체형 태양열 집열기 Expired - Fee Related KR101996607B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201161505014P 2011-07-06 2011-07-06
US61/505,014 2011-07-06
PCT/US2012/045778 WO2013006803A2 (en) 2011-07-06 2012-07-06 Integrated solar collectors using epitaxial lift off and cold weld bonded semiconductor solar cells

Publications (2)

Publication Number Publication Date
KR20140043805A KR20140043805A (ko) 2014-04-10
KR101996607B1 true KR101996607B1 (ko) 2019-10-01

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KR1020147002202A Expired - Fee Related KR101996607B1 (ko) 2011-07-06 2012-07-06 에피택셜 리프트 오프 및 냉간 용접 결합된 반도체 태양 전지를 사용한 일체형 태양열 집열기

Country Status (11)

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US (3) US20130037095A1 (https=)
EP (1) EP2729968B1 (https=)
JP (1) JP6312257B2 (https=)
KR (1) KR101996607B1 (https=)
CN (2) CN106098842B (https=)
AU (2) AU2012280933A1 (https=)
CA (1) CA2840968A1 (https=)
ES (1) ES2834435T3 (https=)
HK (1) HK1197315A1 (https=)
TW (1) TWI693722B (https=)
WO (1) WO2013006803A2 (https=)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10741712B2 (en) * 2012-02-15 2020-08-11 Alta Devices, Inc. Photovoltaic module containing shingled photovoltaic tiles and fabrication processes thereof
US9087905B2 (en) * 2012-10-03 2015-07-21 International Business Machines Corporation Transistor formation using cold welding
US9666739B2 (en) * 2013-06-28 2017-05-30 Sunpower Corporation Photovoltaic cell and laminate metallization
US20160276520A1 (en) * 2013-11-11 2016-09-22 The Regents Of The University Of Michigan Thermally-assisted cold-weld bonding for epitaxial lift-off process
TW201539971A (zh) 2013-11-29 2015-10-16 Univ Michigan 利用剪紙工藝啟發之微結構於平板光伏打面板之自主太陽能追蹤
CN106165111A (zh) * 2014-01-15 2016-11-23 密歇根大学董事会 外延剥离太阳能电池与迷你抛物面聚光器阵列通过印刷方法的集成
TWI681565B (zh) * 2014-01-15 2020-01-01 美國密西根州立大學 利用超晶格磊晶層對磊晶剝離薄膜裝置行非破壞性晶圓回收
US10141465B2 (en) * 2014-04-04 2018-11-27 The Regents Of The University Of Michigan Epitaxial lift-off processed GaAs thin-film solar cells integrated with non-tracking mini-compound parabolic concentrators
CN106575680A (zh) * 2014-04-04 2017-04-19 密歇根大学董事会 集成有非追踪微型复合抛物面聚光器的经过外延剥离处理的gaas薄膜太阳能电池
TW201607143A (zh) 2014-04-29 2016-02-16 美國密西根州立大學 與太陽能電池陣列整合之可撓性天線
USRE49869E1 (en) * 2015-02-10 2024-03-12 iBeam Materials, Inc. Group-III nitride devices and systems on IBAD-textured substrates
JP7057132B2 (ja) * 2015-02-27 2022-04-19 ザ リージェンツ オブ ザ ユニヴァシティ オブ ミシガン 中間光学フィルターを有するメカニカルスタック型タンデム光起電力セル
JP2018514083A (ja) 2015-03-18 2018-05-31 ザ リージェンツ オブ ザ ユニヴァシティ オブ ミシガン プレパターニングされたメサを経由する歪み緩和エピタキシャルリフトオフ
KR101743017B1 (ko) 2015-05-19 2017-06-05 한국과학기술연구원 고속 에피택셜 리프트오프와 iii-v족 직접 성장용 템플릿을 이용한 반도체 소자의 제조 방법 및 이에 의해 제조된 반도체 소자
MX388217B (es) 2015-09-24 2025-03-19 Hunt Perovskite Tech L L C Sistema y método para probar la degradación del dispositivo fotosensible.
CN108140679A (zh) 2015-09-28 2018-06-08 夏普株式会社 薄膜化合物太阳电池、薄膜化合物太阳电池的制造方法、薄膜化合物太阳电池阵列及薄膜化合物太阳电池阵列的制造方法
FR3047350B1 (fr) * 2016-02-03 2018-03-09 Soitec Substrat avance a miroir integre
KR102559479B1 (ko) * 2018-03-16 2023-07-26 상라오 징코 솔라 테크놀러지 디벨롭먼트 컴퍼니, 리미티드 화합물 반도체 태양전지의 제조 방법
DE102018002426A1 (de) * 2018-03-26 2019-09-26 Azur Space Solar Power Gmbh Stapelförmiges III-V-Halbleiterzeug und Herstellungsverfahren
KR20200021772A (ko) * 2018-08-21 2020-03-02 엘지전자 주식회사 화합물 반도체 태양전지 및 이의 제조 방법
KR20200023068A (ko) * 2018-08-24 2020-03-04 엘지전자 주식회사 화합물 반도체 태양전지의 제조 방법
US11137784B2 (en) * 2018-09-07 2021-10-05 The George Washington University Linear voltage regulator circuit incorporating light emitting and photovoltaic devices
JP7316638B2 (ja) * 2019-05-15 2023-07-28 パナソニックＩｐマネジメント株式会社 樹脂組成物、樹脂被覆基板および素子チップの製造方法
EP4146991A1 (en) * 2020-05-06 2023-03-15 3M Innovative Properties Company Solar energy absorbing and radiative cooling articles and methods
EP4218060A4 (en) * 2020-09-23 2024-09-25 Antora Energy, Inc. Structures and methods for producing an optoelectronic device
US12424965B2 (en) 2022-06-02 2025-09-23 Antora Energy, Inc. Layered window in thermophotovoltaic devices

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090038678A1 (en) 2007-07-03 2009-02-12 Microlink Devices, Inc. Thin film iii-v compound solar cell
WO2010026415A2 (en) * 2008-09-04 2010-03-11 Barry Clive Photovoltaic cell apparatus
JP2010120088A (ja) 2009-12-24 2010-06-03 Seiko Epson Corp 接合体の形成方法および接合体
WO2011066029A2 (en) * 2009-09-10 2011-06-03 The Regents Of The University Of Michigan Methods of preparing flexible photovoltaic devices using epitaxial liftoff, and preserving the integrity of growth substrates used in epitaxial growth

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU650782B2 (en) * 1991-09-24 1994-06-30 Canon Kabushiki Kaisha Solar cell
US5288337A (en) * 1992-06-25 1994-02-22 Siemens Solar Industries, L.P. Photovoltaic module with specular reflector
JP3467153B2 (ja) * 1996-08-30 2003-11-17 株式会社リコー 半導体素子
US6440769B2 (en) * 1999-11-26 2002-08-27 The Trustees Of Princeton University Photovoltaic device with optical concentrator and method of making the same
US6333458B1 (en) 1999-11-26 2001-12-25 The Trustees Of Princeton University Highly efficient multiple reflection photosensitive optoelectronic device with optical concentrator
CN2613726Y (zh) * 2003-04-17 2004-04-28 北京工业大学 复合抛物面聚光热电综合利用装置
DE102004023856B4 (de) * 2004-05-12 2006-07-13 Rwe Space Solar Power Gmbh Solarzelle mit integrierter Schutzdiode und zusätzlich auf dieser angeordneten Tunneldiode
US7319189B2 (en) * 2004-10-27 2008-01-15 Universite De Liege Solar concentrator
HRPK20050434B3 (en) * 2005-05-16 2008-06-30 Urli Natko Stationary photovoltaic module with low concentration ratio of solar radiation
US20070193620A1 (en) * 2006-01-17 2007-08-23 Hines Braden E Concentrating solar panel and related systems and methods
US7638708B2 (en) * 2006-05-05 2009-12-29 Palo Alto Research Center Incorporated Laminated solar concentrating photovoltaic device
US20100047959A1 (en) * 2006-08-07 2010-02-25 Emcore Solar Power, Inc. Epitaxial Lift Off on Film Mounted Inverted Metamorphic Multijunction Solar Cells
US8742251B2 (en) * 2006-12-20 2014-06-03 Jds Uniphase Corporation Multi-segment photovoltaic power converter with a center portion
WO2009108896A1 (en) 2008-02-27 2009-09-03 Brilliant Film, Llc Concentrators for solar power generating systems
US20090283133A1 (en) * 2008-05-14 2009-11-19 3M Innovative Properties Company Solar concentrating mirror
CN102333998B (zh) * 2008-12-30 2015-08-05 3M创新有限公司 宽带反射器、集光型太阳能发电系统、以及使用它们的方法
AU2009230775B1 (en) * 2009-10-26 2010-03-04 Mip, Llc Asymmetric parabolic compound concentrator with photovoltaic cells
JP5215284B2 (ja) * 2009-12-25 2013-06-19 シャープ株式会社 多接合型化合物半導体太陽電池
CN102082195B (zh) * 2010-09-30 2012-03-07 南通大学 自动跟踪双抛物面聚光发电供热系统
EP2700114A1 (en) 2011-04-18 2014-02-26 The Regents of the University of Michigan Light trapping architecture for photovoltaic and photodetector applications

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090038678A1 (en) 2007-07-03 2009-02-12 Microlink Devices, Inc. Thin film iii-v compound solar cell
WO2010026415A2 (en) * 2008-09-04 2010-03-11 Barry Clive Photovoltaic cell apparatus
WO2011066029A2 (en) * 2009-09-10 2011-06-03 The Regents Of The University Of Michigan Methods of preparing flexible photovoltaic devices using epitaxial liftoff, and preserving the integrity of growth substrates used in epitaxial growth
JP2010120088A (ja) 2009-12-24 2010-06-03 Seiko Epson Corp 接合体の形成方法および接合体

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TWI693722B (zh) 2020-05-11
CA2840968A1 (en) 2013-01-10
EP2729968A2 (en) 2014-05-14
US20130037095A1 (en) 2013-02-14
CN106098842A (zh) 2016-11-09
AU2012280933A1 (en) 2014-01-23
US12132127B2 (en) 2024-10-29
CN106098842B (zh) 2018-12-18
TW201320369A (zh) 2013-05-16
JP2014523132A (ja) 2014-09-08
KR20140043805A (ko) 2014-04-10
WO2013006803A8 (en) 2013-06-06
ES2834435T3 (es) 2021-06-17
WO2013006803A3 (en) 2013-05-10
US20160141431A1 (en) 2016-05-19
CN103890974A (zh) 2014-06-25
HK1197315A1 (en) 2015-01-09
EP2729968B1 (en) 2020-09-02
WO2013006803A2 (en) 2013-01-10
US20220013672A1 (en) 2022-01-13
AU2016200455A1 (en) 2016-02-18
JP6312257B2 (ja) 2018-04-18

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