KR101967290B1 - In cell-touch type touch organic light-emitting diode display device - Google Patents

In cell-touch type touch organic light-emitting diode display device Download PDF

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KR101967290B1
KR101967290B1 KR1020120128971A KR20120128971A KR101967290B1 KR 101967290 B1 KR101967290 B1 KR 101967290B1 KR 1020120128971 A KR1020120128971 A KR 1020120128971A KR 20120128971 A KR20120128971 A KR 20120128971A KR 101967290 B1 KR101967290 B1 KR 101967290B1
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electrode
touch
light emitting
emitting diode
gate
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KR1020120128971A
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Korean (ko)
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KR20140062341A (en
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신상일
김상수
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엘지디스플레이 주식회사
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    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L51/00—Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
    • H01L51/50—Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for light emission, e.g. organic light emitting diodes [OLED] or polymer light emitting devices [PLED]
    • H01L51/52—Details of devices
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/0412—Digitisers structurally integrated in a display
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L51/00—Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
    • H01L51/50—Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for light emission, e.g. organic light emitting diodes [OLED] or polymer light emitting devices [PLED]
    • H01L51/56—Processes or apparatus specially adapted for the manufacture or treatment of such devices or of parts thereof
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2203/00—Indexing scheme relating to G06F3/00 - G06F3/048
    • G06F2203/041—Indexing scheme relating to G06F3/041 - G06F3/045
    • G06F2203/04111—Cross over in capacitive digitiser, i.e. details of structures for connecting electrodes of the sensing pattern where the connections cross each other, e.g. bridge structures comprising an insulating layer, or vias through substrate

Abstract

The present invention provides a liquid crystal display comprising: a substrate including a plurality of pixel regions; A plurality of first touch electrodes arranged along the first direction on the substrate and integrally connected to each other; A plurality of second touch electrodes arranged along the second direction on the substrate and spaced apart from each other in an island shape; A first insulation layer covering the first and second touch electrodes and having first and second touch electrode contact holes exposing both ends of the second touch electrode; A connection pattern located above the first insulation layer and in contact with the second electrode neighboring the first and second contact holes; A plurality of gate lines and a plurality of data lines crossing each other on the substrate to define the plurality of pixel regions; A thin film transistor formed in each of the plurality of pixel regions located above the first insulating layer; And a light emitting diode (OLED) connected to the thin film transistor.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to an in-cell-touch type organic light emitting diode (OLED)

The present invention relates to an organic light emitting diode (OLED) display device, and more particularly, to a thin OLED display device which does not require a separate touch panel.

In recent years, the display field for processing and displaying a large amount of information has been rapidly developed as society has entered into a full-fledged information age. In recent years, flat panel display devices having excellent performance such as thinning, light weight, It replaces the existing cathode ray tube (CRT).

An organic light-emitting diode (OLED) display device, which is one of flat panel display devices (FPDs), has a better viewing angle and contrast than a liquid crystal display device because it is self-emitting type, Therefore, it is possible to make a light-weight thin type, and it is also advantageous in terms of power consumption. Also, because it can be driven by DC low voltage, has a fast response speed, and is solid, it is resistant to external impact, has a wide temperature range, and is especially advantageous in terms of manufacturing cost.

On the other hand, a touch-type display device capable of selecting a screen of a video display device as a human hand or an object and inputting a user command is widely used.

To this end, a touch-type display device is provided with a touch panel on a front surface of a video display device, and converts a position directly touching a human hand or an object into an electrical signal. Thus, the instruction content selected at the contact position is supplied as an input signal.

As a method of implementing such a touch panel, a resistive type, a light sensing type, and a capacitive type are known. The dual volumetric capacitive touch panel senses the change in capacitance that a conductive sensing pattern forms with other surrounding sensing patterns when a human hand or object is touched.

Such a touch panel is implemented by an add-on method in which a separate touch panel is formed on an organic light emitting diode display device.

However, such an add-on type touch-type light-emitting diode display device is problematic in that the thickness of the entire display device is increased by the touch panel and the manufacturing cost is increased by a separate substrate required for the touch panel formation process and the touch panel have.

The present invention realizes the function of a touch panel in an organic light emitting diode display device, thereby solving the problem of an increase in the thickness of a display device and an increase in manufacturing cost caused by attaching the touch panel to the outer surface of the image display device.

In order to solve the above problems, the present invention provides a liquid crystal display comprising: a substrate including a plurality of pixel regions; A plurality of first touch electrodes arranged along the first direction on the substrate and integrally connected to each other; A plurality of second touch electrodes arranged along the second direction on the substrate and spaced apart from each other in an island shape; A first insulation layer covering the first and second touch electrodes and having first and second touch electrode contact holes exposing both ends of the second touch electrode; A connection pattern located above the first insulation layer and in contact with the second electrode neighboring the first and second contact holes; A plurality of gate lines and a plurality of data lines crossing each other on the substrate to define the plurality of pixel regions; A thin film transistor formed in each of the plurality of pixel regions located above the first insulating layer; And a light emitting diode (OLED) connected to the thin film transistor.

In the inductor-touch type organic light emitting diode display device of the present invention, the connection pattern is formed of the same material as the plurality of gate wirings and is located between neighboring gate wirings among the plurality of gate wirings .

In the in-cell type organic light emitting diode display device of the present invention, the connection pattern may be overlapped with the data line.

In the inductor-touch-type organic light emitting diode display device of the present invention, the connection pattern is formed of the same material as the plurality of data lines and is located between neighboring data lines among the plurality of data lines. .

In the in-cell type organic light emitting diode display of the present invention, the connection pattern is overlapped with the gate wiring.

In the inductor-touch type organic light emitting diode display of the present invention, the light emitting diode includes a first electrode connected to the thin film transistor, a second electrode over the first electrode, and an organic emission layer between the first and second electrodes. And the light of the organic light emitting layer is displayed outside through the first electrode and the substrate.

In the in-cell type organic light emitting diode display of the present invention, each of the first and second touch electrodes may have a diamond shape or a hexagonal shape.

In the inductor-touch type organic light emitting diode display device of the present invention, the first direction is parallel to the extending direction of any one of the gate wiring and the data wiring, and the second direction is one of the gate wiring and the data wiring And is parallel to the extending direction of any one of the other.

The thin film transistor includes a gate electrode positioned on the first insulating layer, a second insulating layer covering the gate electrode, and a second insulating layer on the second insulating layer. And a source electrode and a drain electrode spaced from each other on the semiconductor layer, wherein the organic light emitting diode is connected to the drain electrode.

In the inductor-touch type organic light emitting diode display of the present invention, a third insulating layer covering the thin film transistor and made of an inorganic insulating material, and a fourth insulating layer covering the third insulating layer and made of an organic insulating material A drain contact hole exposing the drain electrode is formed in the third and fourth insulating layers, and the organic light emitting diode is connected to the drain electrode through the drain contact hole.

A touch electrode is formed between a substrate and an array element in an organic light emitting diode display device and a connection pattern for connection of a touch electrode is formed in a step of forming an element of the array element. .

Such an in-cell-touch type organic light emitting diode display device does not require a separate touch panel, and therefore has a thin thickness effect due to a reduced thickness of the display device.

In addition, a connection pattern is formed in a step of forming the elements of the array element without requiring a separate metal layer for connecting the touch electrodes, and the manufacturing cost is reduced because of the in-cell type method.

Further, since the connection pattern formed of opaque metal overlaps with the gate wiring or the data wiring, it is possible to prevent the aperture ratio of the bottom emission type organic light emitting diode display device from being reduced.

1 is a schematic cross-sectional view of an in-cell-touch type organic light emitting diode display device according to a first embodiment of the present invention.
2 is a schematic plan view of an in-cell type organic light emitting diode display device according to a first embodiment of the present invention.
3 is a schematic cross-sectional view of an in-cell-touch type organic light emitting diode display device according to a second embodiment of the present invention.
4 is a schematic plan view of an in-cell type organic light emitting diode display device according to a second embodiment of the present invention.

Hereinafter, preferred embodiments according to the present invention will be described with reference to the drawings.

1 is a schematic cross-sectional view of an in-cell-touch type organic light emitting diode display device according to a first embodiment of the present invention.

1, an insulator-touch type organic light emitting diode display device according to a first embodiment of the present invention includes a touch panel TP on a substrate 101, an array unit (not shown) on the touch panel TP, AP), and a light emitting diode (E) on the array part (AP).

The touch part TP senses a user's touch, the light emitting diode E serves as a light source, and the array part AP controls the operation of the light emitting diode E.

The touch unit TP includes a plurality of first touch electrodes 112 arranged along a first direction, a plurality of second touch electrodes 114 arranged along a second direction different from the first direction, And a connection pattern 134 connecting the plurality of second touch electrodes 114. For example, the first direction may be parallel to a data line (not shown), and the second direction may be parallel to a gate line (not shown), but is not limited thereto.

Each of the first and second touch electrodes 112 and 114 is formed of a transparent conductive material such as indium-tin-oxide (ITO) or indium-zinc-oxide (IZO) .

That is, the plurality of first touch electrodes 112 are integrally formed, and the plurality of second touch electrodes 114 are spaced apart from each other. The connection pattern 134 is located at an intersection of the first touch electrode 112 and the second touch electrode 114 and extends along the second direction to electrically connect the second touch electrode 114 .

More specifically, the plurality of first touch electrodes 112 are integrally formed on the substrate 101 along a first direction, and the plurality of the plurality of first touch electrodes 112 are formed as island- The second touch electrode 114 is formed.

A first insulating layer 120 is formed on the substrate 101 to cover the first and second touch electrodes 112 and 114. The first insulating layer 120 includes first and second contact electrode contact holes 122 and 124 exposing both ends of the second touch electrode 114 spaced apart from each other.

The connection pattern 134 electrically connecting the second electrode 114 adjacent to the first and second touch electrode contact holes 122 and 134 is formed on the first insulation layer 120. That is, one end of the connection pattern 134 contacts the second touch electrode 114 located in the first touch area through the first contact hole 122, and the other end of the connection pattern 134 contacts the second touch electrode 114, 2 contact hole 124 with the second touch electrode 114 located in the second touch region adjacent to the first touch region. Accordingly, a plurality of second electrodes 114 spaced apart from each other in an island shape are electrically connected through the connection pattern 134.

The array unit AP includes a driving thin film transistor Tr, a switching thin film transistor (not shown), a gate wiring (not shown) for controlling the operation of the light emitting diode E, , Data wiring (not shown), and power wiring (not shown).

The gate wiring and the data wiring intersect each other to define a pixel region (P), and the switching thin film transistor is connected to the gate wiring and the data wiring. The gate wiring is located on the same layer as the connection pattern 134 and is made of the same material.

The driving thin film transistor DTr is connected to the switching thin film transistor and the power source wiring, and the voltage of the power source wiring is applied to the light emitting diode E by the operation of the switching thin film transistor.

Each of the switching thin film transistor and the driving thin film transistor Tr may include a gate electrode 132, a second insulating layer 136, a semiconductor layer 140, a source electrode 152 and a drain electrode 154 . For example, the gate electrode 132 is located on the first insulating layer 120, the second insulating layer 136 covers the gate electrode 132, And may overlap the gate electrode 132 on the second insulating layer 136. The source electrode 152 and the drain electrode 154 are spaced apart from each other on the semiconductor layer 140.

For example, the gate line, the gate electrode 232, the data line, the source electrode 252, and the drain electrode 254 may be formed of aluminum, an aluminum alloy, copper, a copper alloy, molybdenum, Or chromium.

1, the semiconductor layer 140 of the driving thin film transistor Tr is formed of an oxide semiconductor layer. The structure in which the etch-stopper 142 is formed for protecting the semiconductor layer 140 made of an oxide semiconductor material Respectively. However, it is apparent that the etch-stopper 142 can be omitted. Further, the structure of the driving thin film transistor Tr shown in Fig. 1 is not limited.

That is, instead of the semiconductor layer 140 made of an oxide semiconductor material, the semiconductor layer 140 may include an active layer made of pure amorphous silicon and a semiconductor layer made of an amorphous silicon ohmic contact layer.

Further, a top gate type thin film transistor using a semiconductor layer made of polysilicon may be included.

1, the connection pattern 134 is located on the same layer as the gate wiring and is made of the same material. However, the connection pattern 134 may be formed on the data line, the source electrode 152, the drain electrode 154, It can be located on the same layer and made of the same material.

A passivation layer 160 is formed to cover the driving thin film transistor Tr and a planarization layer 162 covering the passivation layer 160 and providing a flat upper surface. The passivation layer 160 and the planarization layer 162 include a drain contact hole 164 for exposing the drain electrode 154 of the driving TFT Tr.

The protective layer 160 is made of an inorganic insulating material for improving the contact property with the semiconductor layer 140. The protective layer 160 may be formed by a step of a lower component of the protective layer 160 made of an inorganic insulating material, Lt; / RTI > When the light emitting diode (E) is formed on the passivation layer 160, the characteristics of the organic light emitting layer 174 may be degraded. The planarization layer 162 is formed on the passivation layer 160 and is formed of an organic insulating material such as photo-acryl and has a flat upper surface. However, it goes without saying that either the protective layer 160 or the planarization layer 162 may be omitted.

The light emitting diode (E) is formed on the planarization layer (162) to correspond to the pixel region (P). The light emitting diode E includes a first electrode 170 electrically connected to the drain electrode 154 of the driving thin film transistor Tr, a second electrode 176 facing the first electrode 170, And an organic light emitting layer 174 disposed between the first and second electrodes 170 and 176.

The first electrode 170 is in contact with the drain electrode 154 of the driving TFT Tr through the drain contact hole 164 but may be connected through a separate connection electrode.

In the organic light emitting layer 174, light is generated by the combination of electrons and holes injected by the first electrode 170 and the second electrode 176.

The first electrode 170 and the organic light emitting layer 174 are located at the edge of the first electrode 170 and the bank 172 along the boundary of the pixel region P, The pixel regions P are formed separately. Meanwhile, the second electrode 176 is formed corresponding to the entire substrate 101.

At this time, the first electrode 170 is made of a material having a relatively high work function value as an anode, and the second electrode 176 is made of a material having a relatively low work function value as a cathode. For example, a transparent conductive material such as ITO or IZO. Accordingly, the light emitted from the organic light emitting layer 174 is externally displayed through the first electrode 170 and the substrate 101. That is, the organic light emitting diode display of the present invention is a bottom emission type in which an image is implemented through the substrate 101 on which the array unit AP is formed. Here, for light efficiency, the second electrode 172 may be made of a reflective metal material such as silver (Ag) or a silver-magnesium alloy (AlMg).

The in-cell-touch type organic light emitting diode display device described above can minimize the reduction of the aperture ratio due to the touch portion. On the contrary, FIG. 5 is a schematic plan view of the in- 2 will be described.

As shown in FIG. 2, the first touch electrode 112 connected along the first direction and the second touch electrode 114 arranged along the second direction and spaced apart from the island are connected to the substrate (101 of FIG. 1) As shown in Fig. In addition, a connection pattern 134 is formed for electrical connection between the second touch electrodes 114 spaced from each other.

At this time, the connection pattern 134 extends in the second direction, that is, parallel to the direction of the gate wiring 130, and is located between neighboring gate wiring 130. That is, since the connection pattern 134 is formed on the same layer as the gate electrode (132 in FIG. 1) and the gate wiring 130, the gate wiring 130 and the gate wiring 130 are formed to prevent electrical short- Are formed between adjacent gate wirings 130 so as not to overlap each other.

In addition, the connection pattern 134 overlaps the data line 150. Since the insulator-touch type organic light emitting diode display of the present invention is a bottom emission type in which light is emitted through the substrate (101 in FIG. 1), the connection pattern 134 made of opaque, By overlapping with the data wiring 150, the reduction of the aperture ratio by the connection pattern 134 can be minimized.

Alternatively, when the connection pattern 134 is formed of the same material as the data line 150, the connection pattern 134 may be electrically connected to the data line 150, (150). In addition, since the insulator-touch type organic light emitting diode display of the present invention is a bottom emission type in which light is emitted through the substrate (101 in FIG. 1), in order to minimize a decrease in the aperture ratio by the touch portion TP, The pattern 134 is positioned to overlap with the gate wiring 150.

In FIG. 2, each of the first and second connection patterns 112 and 114 is shown as having a diamond shape, but is not limited thereto. For example, each of the first and second connection patterns 112 and 114 may have a hexagonal shape.

FIG. 3 is a schematic cross-sectional view of an in-cell-touch-type organic light emitting diode display device according to a second embodiment of the present invention, FIG. 4 is a schematic view of an in- Respectively. 3 and 4, the differences from the first embodiment will be mainly described.

3 and 4, an insulator-touch type organic light emitting diode display device according to a second embodiment of the present invention includes a touch panel TP on a substrate 201, An array unit AP, and a light emitting diode E on the array unit AP.

The touch portion TP includes a plurality of first touch electrodes 212 having an island shape along a first direction parallel to the data line 250 and spaced apart from each other, and a second direction parallel to the gate line 130 A plurality of second touch electrodes 214 connected to each other and a connection pattern 256 connecting the plurality of first touch electrodes 212.

As described above, each of the first and second touch electrodes 212 and 214 may be formed of indium-tin-oxide (ITO) or indium-zinc-oxide (IZO) Is made of the same transparent conductive material.

A first insulating layer 220 is formed on the substrate 201 so as to cover the first and second touch electrodes 212 and 214. An array part AP is formed on the first insulating layer 220, .

That is, an array part including a driving thin film transistor Tr, a switching thin film transistor (not shown), a gate wiring 230, a data wiring 250 and a power wiring (not shown) is formed on the first insulating layer 220. (AP) is formed.

The gate line 230 and the data line 250 intersect each other to define a pixel region P and each of the driving TFTs Tr includes a gate electrode 232, a second insulating layer 236, A layer 240, a source electrode 252, and a drain electrode 254. Referring to FIG.

The second insulating layer 236 and the first insulating layer 220 may include first and second touch electrode contact holes 222 and 224 that respectively expose both ends of the first touch electrode 212, .

The connection pattern 256 made of the same material is formed on the second insulation layer 220 in the same layer as the data line 250. One end of the connection pattern 256 contacts the first touch electrode 212 located in the first touch region through the first contact hole 222 and the other end of the connection pattern 256 contacts the second contact The hole 224 is brought into contact with the first touch electrode 212 located in the second touch region adjacent to the first touch region.

Accordingly, a plurality of first electrodes 212 spaced apart from each other in an island shape are electrically connected through the connection pattern 256.

A passivation layer 260 is formed to cover the driving thin film transistor Tr and the connection pattern 256 and a planarization layer 262 covering the passivation layer 260 and providing a flat upper surface is formed. The passivation layer 260 and the planarization layer 262 may include a drain contact hole 264 exposing the drain electrode 254 of the driving TFT Tr.

As described above, either the protective layer 260 or the planarization layer 262 may be omitted.

The light emitting diode (E) is formed on the planarization layer (262) in correspondence with the pixel region (P). The light emitting diode E includes a first electrode 270, a second electrode 276 facing the first electrode 170, and an organic emission layer 270 disposed between the first and second electrodes 270 and 276. [ (274).

The first electrode 270 is made of a material having a high work function such as ITO or IZO and functions as an anode while the second electrode 276 is made of Ag or a silver- It consists of a low-value material and acts as a cathode.

The organic light emitting diode display device of the present invention is a bottom emission type in which an image is implemented through a substrate 101 on which an array unit AP is formed.

At this time, the connection pattern 256 for connecting the first touch electrodes 212 arranged along the first direction and spaced apart from each other in the island shape extends parallel to the direction of the data line 250, 230). That is, since the connection pattern 256 is formed on the same layer as the data line 250, the data line 250 adjacent to the data line 250 does not overlap with the data line 250 in order to prevent an electrical short- .

In addition, the connection pattern 256 is positioned so as to overlap with the gate wiring 230. Since the insulator-touch type organic light emitting diode display of the present invention is a bottom emission type in which light is emitted through the substrate 201 (see FIG. 2), the connection pattern 256 made of opaque, By overlapping with the gate wiring 230, the reduction of the aperture ratio by the connection pattern 256 can be minimized.

1 to 4, the connection patterns 134 and 256 are formed on the same layer as the gate wiring or the data wiring, but the connection pattern is the same as the first electrode of the organic light emitting diode E Layer may be made of the same material.

In the in-line type organic light emitting diode display device having the above-described structure, since the touch portion is formed on the substrate on which the array portion is formed, a touch panel is not separately required as in the related art. Therefore, omission of components for the touch panel can reduce the manufacturing cost and reduce the thickness of the display device.

In addition, since the connection pattern for connecting the touch electrodes which are separated from each other is formed of the same material as the gate electrode, the data wire, or the first electrode of the organic light emitting diode, the manufacturing process is simplified and the manufacturing cost can be reduced .

Further, since the connection pattern is formed so as to overlap with the gate wiring or the data wiring which is the non-display region, it is possible to prevent the aperture ratio from being reduced by the touch portion.

It will be apparent to those skilled in the art that various modifications and variations can be made in the present invention without departing from the spirit or scope of the invention as defined in the appended claims. It can be understood that

101, 201: substrate 112, 212: first touch electrode
114, 214: second touch electrode 120, 220: first insulating layer
122, 124, 222, 224: touch electrode contact holes
130, 230: gate wiring 134, 256: connection pattern
150, 250: Data line 170: First electrode
174: organic light emitting layer 176: second electrode
Tr: driving thin film transistor E: light emitting diode

Claims (13)

  1. A liquid crystal display comprising: a substrate including a plurality of pixel regions;
    A plurality of first touch electrodes arranged along the first direction on the substrate and integrally connected to each other;
    A plurality of second touch electrodes arranged along the second direction on the substrate and spaced apart from each other in an island shape;
    A first insulation layer covering the first and second touch electrodes and having first and second touch electrode contact holes exposing both ends of the second touch electrode;
    A connection pattern located above the first insulation layer and in contact with the second touch electrode neighboring through the first and second contact holes;
    A plurality of gate lines and a plurality of data lines crossing each other on the substrate to define the plurality of pixel regions;
    A thin film transistor formed in each of the plurality of pixel regions located above the first insulating layer;
    The light emitting diode
    Type organic light emitting diode display device.
  2. The method according to claim 1,
    Wherein the connection pattern is formed of the same material as the plurality of gate wirings and is located between adjacent gate wirings of the plurality of gate wirings.
  3. 3. The method of claim 2,
    Wherein the connection pattern is overlapped with the data line.
  4. The method according to claim 1,
    Wherein the connection pattern is formed of the same material in the same layer as the plurality of data lines and is located between neighboring data lines of the plurality of data lines.
  5. 5. The method of claim 4,
    Wherein the connection pattern is overlapped with the gate wiring. ≪ Desc / Clms Page number 19 >
  6. 6. The method according to any one of claims 1 to 5,
    The light emitting diode includes a first electrode connected to the thin film transistor, a second electrode over the first electrode, and an organic light emitting layer between the first electrode and the second electrode, Wherein the organic light emitting diode display is externally displayed through the substrate.
  7. 6. The method according to any one of claims 1 to 5,
    Wherein each of the first and second touch electrodes has a diamond shape or a hexagonal shape.
  8. The method according to claim 1,
    Wherein the first direction is parallel to the extending direction of one of the gate wiring and the data wiring and the second direction is parallel to the extending direction of the other of the gate wiring and the data wiring. Touch type organic light emitting diode display.
  9. 6. The method according to any one of claims 1 to 5,
    Wherein the thin film transistor includes a gate electrode positioned on the first insulating layer, a second insulating layer covering the gate electrode, a semiconductor layer located on the second insulating layer, and a source electrode And a drain electrode, wherein the organic light emitting diode is connected to the drain electrode.
  10. 10. The method of claim 9,
    A third insulating layer covering the thin film transistor and made of an inorganic insulating material; and a fourth insulating layer covering the third insulating layer and made of an organic insulating material, and the third and fourth insulating layers include a drain electrode And the organic light emitting diode is connected to the drain electrode through the drain contact hole.
  11. 6. The method according to any one of claims 1 to 5,
    And the light from the light emitting diode passes through the substrate to display an image.
  12. The method according to claim 1,
    Wherein the first direction is parallel to the extending direction of the data line, the second direction is parallel to the extending direction of the gate line,
    Wherein the connection pattern overlaps with the data line and is located between neighboring gate lines among the plurality of gate lines.
  13. The method according to claim 1,
    Wherein the first direction is parallel to the extending direction of the gate wiring, the second direction is parallel to the extending direction of the data wiring,
    Wherein the connection pattern overlaps with the gate wiring and is located between neighboring data wirings of the plurality of data wirings.
KR1020120128971A 2012-11-14 2012-11-14 In cell-touch type touch organic light-emitting diode display device KR101967290B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020120128971A KR101967290B1 (en) 2012-11-14 2012-11-14 In cell-touch type touch organic light-emitting diode display device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020120128971A KR101967290B1 (en) 2012-11-14 2012-11-14 In cell-touch type touch organic light-emitting diode display device

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KR20140062341A KR20140062341A (en) 2014-05-23
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