CN108962969B - Display panel and electronic device - Google Patents
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- CN108962969B CN108962969B CN201810999136.6A CN201810999136A CN108962969B CN 108962969 B CN108962969 B CN 108962969B CN 201810999136 A CN201810999136 A CN 201810999136A CN 108962969 B CN108962969 B CN 108962969B
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- 239000000758 substrate Substances 0.000 claims abstract description 41
- 239000010409 thin film Substances 0.000 claims abstract description 14
- 229910052751 metal Inorganic materials 0.000 claims description 32
- 239000002184 metal Substances 0.000 claims description 32
- 238000000034 method Methods 0.000 claims description 7
- 238000004020 luminiscence type Methods 0.000 claims 1
- 230000000873 masking effect Effects 0.000 claims 1
- 239000010408 film Substances 0.000 abstract description 12
- 230000035945 sensitivity Effects 0.000 abstract description 4
- 238000010586 diagram Methods 0.000 description 15
- 238000005516 engineering process Methods 0.000 description 10
- 239000007769 metal material Substances 0.000 description 9
- 239000000463 material Substances 0.000 description 6
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 5
- 229910052750 molybdenum Inorganic materials 0.000 description 5
- 239000011733 molybdenum Substances 0.000 description 5
- 239000011651 chromium Substances 0.000 description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 3
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 3
- 229910052804 chromium Inorganic materials 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910001080 W alloy Inorganic materials 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- MGRWKWACZDFZJT-UHFFFAOYSA-N molybdenum tungsten Chemical compound [Mo].[W] MGRWKWACZDFZJT-UHFFFAOYSA-N 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- OFIYHXOOOISSDN-UHFFFAOYSA-N tellanylidenegallium Chemical compound [Te]=[Ga] OFIYHXOOOISSDN-UHFFFAOYSA-N 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- NPXOKRUENSOPAO-UHFFFAOYSA-N Raney nickel Chemical class [Al].[Ni] NPXOKRUENSOPAO-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 1
- 229910000828 alnico Inorganic materials 0.000 description 1
- JYMITAMFTJDTAE-UHFFFAOYSA-N aluminum zinc oxygen(2-) Chemical compound [O-2].[Al+3].[Zn+2] JYMITAMFTJDTAE-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 description 1
- 229910001195 gallium oxide Inorganic materials 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/40—OLEDs integrated with touch screens
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
- G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
- G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
Landscapes
- Engineering & Computer Science (AREA)
- General Engineering & Computer Science (AREA)
- Theoretical Computer Science (AREA)
- Human Computer Interaction (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
The invention provides a display panel and an electronic device, wherein the display panel comprises an array substrate, and the array substrate comprises a substrate, a thin film transistor layer positioned on the substrate and a touch control layer positioned between the substrate and the thin film transistor layer. According to the invention, the touch control layer is arranged between the substrate and the thin film transistor layer, so that the film thickness of the display panel is reduced, and the touch control sensitivity of the display screen is improved.
Description
Technical Field
The present invention relates to the field of display, and in particular, to a display panel and an electronic device.
Background
Touch technologies that are currently in common use include plug-in touch technologies and in-cell touch technologies. The embedded touch technology is to integrate the touch sensor into the touch substrate, and the externally hung touch technology is to attach a transparent cover plate with the touch sensor on the outer surface of the display, so that the difficulty is reduced compared with that of the embedded touch technology.
In the prior art, the OLED display is mostly manufactured by an externally hung touch technology, which increases the thickness of the display panel, is unfavorable for the development of light and thin display, and has more manufacturing processes of the touch sensor. As the mobile phones are lighter and thinner, embedded touch technology is increasingly applied. The invention provides an OLED display screen with an embedded touch technology based on the background technology.
Disclosure of Invention
The invention provides a display panel and an electronic device, which are used for solving the technical problem that the touch sensitivity of the conventional OLED display panel is weaker.
In order to solve the problems, the technical scheme provided by the invention is as follows:
the invention provides a display panel, which comprises an array substrate and a light-emitting device layer positioned on the array substrate, wherein the array substrate comprises:
a substrate;
a thin film transistor layer on the substrate; and
and the touch control layer is positioned between the substrate and the thin film transistor layer.
In the display panel of the present invention, the touch layer includes at least two first electrodes and at least two second electrodes, and the first electrodes and the second electrodes are insulated and cross-arranged.
In the display panel of the present invention, at least one first insulating layer is included between the first electrode and the second electrode.
In the display panel of the present invention, the first electrode and the second electrode are arranged in the same layer;
wherein two adjacent first electrodes are electrically connected through a first metal bridge; or (b)
And two adjacent second electrodes are electrically connected through a second metal bridge.
In the display panel of the present invention, the first metal bridge or the second metal bridge and the gate layer in the array substrate are formed in the same photomask process.
In the display panel of the present invention, the first electrode includes at least one first opening, and the first opening corresponds to the pixel units of the display panel one by one;
the second electrode comprises at least one second opening, and the second opening corresponds to the pixel units of the display panel one by one.
In the display panel of the present invention, the touch layer includes at least two third electrodes distributed in an array, each of the third electrodes corresponds to at least one of the touch wires, and at least one second insulating layer is included between the touch wire and the third electrode.
In the display panel of the present invention, the touch conductive line and the gate layer in the array substrate are formed in the same photomask process.
In the display panel of the present invention, the third electrode includes at least one third opening, and the third opening corresponds to the pixel units of the display panel one by one.
The invention also provides an electronic device which comprises the display panel.
The beneficial effects are that: according to the invention, the touch control layer is arranged between the substrate and the thin film transistor layer, so that the film thickness of the display panel is reduced, and the touch control sensitivity of the display screen is improved.
Drawings
In order to more clearly illustrate the embodiments or the technical solutions in the prior art, the following description will briefly introduce the drawings that are needed in the embodiments or the description of the prior art, it is obvious that the drawings in the following description are only some embodiments of the invention, and that other drawings can be obtained according to these drawings without inventive effort for a person skilled in the art.
FIG. 1 is a diagram showing a structure of a film layer of a display panel according to an embodiment of the invention;
FIG. 2 is a diagram illustrating a touch layer structure according to an embodiment of the present invention;
FIG. 3 is a schematic diagram illustrating a touch layer according to an embodiment of the present invention;
FIG. 4 is a diagram illustrating a structure of a film layer of a display panel according to a second embodiment of the present invention;
FIG. 5 is a schematic diagram illustrating a touch layer according to an embodiment of the present invention;
FIG. 6 is a diagram illustrating a structure of a film layer of a display panel according to a third embodiment of the present invention;
FIG. 7 is a schematic diagram of a three-touch layer according to an embodiment of the present invention;
FIG. 8 is a schematic diagram showing a touch layer of a display panel according to the present invention;
FIG. 9 is a diagram illustrating a structure of a film layer of a display panel according to a fourth embodiment of the present invention;
FIG. 10 is a top view of a four touch layer according to an embodiment of the present invention;
fig. 11 is a schematic diagram illustrating another top view of a four-touch layer according to an embodiment of the invention.
Detailed Description
The following description of the embodiments refers to the accompanying drawings, which illustrate specific embodiments in which the invention may be practiced. The directional terms mentioned in the present invention, such as [ upper ], [ lower ], [ front ], [ rear ], [ left ], [ right ], [ inner ], [ outer ], [ side ], etc., are only referring to the directions of the attached drawings. Accordingly, directional terminology is used to describe and understand the invention and is not limiting of the invention. In the drawings, like elements are designated by like reference numerals.
Fig. 1 is a diagram showing a film structure of a display panel according to an embodiment of the present invention, which includes an array substrate, a light emitting device layer disposed on the array substrate, and a packaging layer disposed on the light emitting device layer;
the array substrate comprises a substrate 101 and a thin film transistor layer 102 positioned on the substrate 101; the material of the substrate 101 may be one of a glass substrate, a quartz substrate, a resin substrate, and the like.
The thin film transistor layer 102 includes an ESL (etch barrier layer type), BCE (back channel etch type) or Top-gate (Top gate thin film transistor type) structure, and is not particularly limited; for example, top gate thin film transistors include: the semiconductor device comprises a buffer layer, an active layer, a gate insulating layer, a gate layer, an inter-insulating layer, a source drain layer and a flat layer.
The light emitting device layer includes an anode layer 109, a light emitting layer 110 on the anode layer 109, and a cathode layer 111 on the light emitting layer 110;
the anode layer 109 is formed on the flat layer, the anode layer 109 includes at least two anodes arranged in an array, and the anode layer 109 is mainly used for providing holes for absorbing electrons; in this embodiment, the light emitting device (OLED) is a bottom emission type OLED device, and thus the anode layer 109 is a transparent metal electrode;
preferably, the material of the anode layer may be at least one of Indium Tin Oxide (ITO), indium Zinc Oxide (IZO), zinc oxide (ZnO), indium oxide (In 2O 3), indium Gallium Oxide (IGO), or zinc aluminum oxide (AZO);
the light emitting layer 110 is formed on the anode layer 109, the light emitting layer 110 is divided into a plurality of light emitting units by the pixel defining layer 112, and each light emitting unit corresponds to one anode; holes generated by the anode layer 109 absorb electrons generated by the cathode layer 111 and generate a light source in the light emitting layer 110.
The cathode layer 111 is formed on the light emitting device layer, and the cathode layer 111 covers the light emitting layer 110 and the pixel defining layer 112 on the array substrate; in this embodiment, the cathode layer 111 is made of a non-transparent material, so that the light generated by the light emitting layer 110 is projected toward the substrate 101 through the cathode layer 111;
preferably, the material of the cathode layer may be one or more of silver (Ag), aluminum (Al), chromium (Cr), molybdenum (Mo), tungsten (W), titanium (Ti), gold (Au), and palladium (Pd).
In addition, the display panel further includes a touch layer 103, and the touch layer 103 is located between the substrate 101 and the thin film transistor layer 102; the touch layer 103 includes at least two first electrodes and at least two second electrodes, where the first electrodes and the second electrodes are insulated and cross-arranged.
As shown in fig. 2, the touch layer 103 includes a first metal layer 104, a second metal layer 105, and at least one first insulating layer 106 between the first metal layer 104 and the second metal layer 105;
as shown in fig. 3, the first metal layer 104 includes a plurality of rows of first electrodes 107 arranged along a first direction, the second metal layer 105 includes a plurality of columns of second electrodes 108 arranged along a second direction, and the first electrodes 107 are insulated from the second electrodes 108 and are arranged to intersect with each other;
it is to be understood that the shapes of the first electrode 107 and the second electrode 108 are not particularly limited, and are preferably quadrangular;
preferably, the material of the first insulating layer 106 may be one or more of silicon oxide, silicon nitride, silicon oxynitride, and the like.
Fig. 4 is a film layer structure diagram of a display panel according to a second embodiment of the present invention, and fig. 5 is a structure diagram of a touch layer according to a second embodiment of the present invention; as can be seen, the touch layer 203 includes a plurality of rows of first electrodes 207 disposed along a first direction, and a plurality of columns of second electrodes 208 disposed along a second direction, wherein the first electrodes 207 are insulated from the second electrodes 208 and are disposed to intersect with each other; wherein the first electrode 207 and the second electrode 208 are arranged in the same layer, i.e. are formed by the same metal layer through the same photomask process;
further, in the first direction, two adjacent first electrodes 207 are electrically connected through a first metal bridge; alternatively, in the second direction, two adjacent second electrodes 208 are electrically connected through a second metal bridge; for example, as shown in fig. 4 and 5, in the first direction, two adjacent first electrodes 207 are electrically connected by a first metal bridge 212; it is understood that only one of the first metal bridge and the second metal bridge is different from the first electrode and the second electrode;
in this embodiment, the first metal bridge 212 or the second metal bridge and the gate layer in the array substrate are formed in the same photomask process;
preferably, the metal material of the first metal bridge 212 or the second metal bridge may be molybdenum, aluminum, alnico, molybdenum-tungsten alloy, chromium, or copper, or a combination of the above metal materials may be used, and in this embodiment, the metal material of the first metal bridge 212 or the second metal bridge is molybdenum;
it can be appreciated that, compared with the first embodiment, the touch layer 203 in this embodiment includes only one metal layer, the film structure is thinner, and the process is simplified, and the cost is saved.
As shown in fig. 6, which is a film structure diagram of a display panel according to a third embodiment of the present invention, unlike the first embodiment or the second embodiment, the touch layer 303 includes at least one first opening 313 located on the first electrode 307 and at least one second opening 314 located on the second electrode 308;
as shown in fig. 7, the first electrode 307 includes three first openings 313 or the second electrode 308 includes three second openings 314; as can be appreciated, the first openings 313 are in one-to-one correspondence with the light emitting units in the pixel units of the display panel; similarly, the second openings 314 are in one-to-one correspondence with the light emitting units in the pixel units of the display panel;
it can be appreciated that the arrangement of the first opening 313 and the second opening 314 allows the light emitted by the light emitting unit to directly penetrate through the first opening 313 or the second opening 314, so as to increase the light emitting efficiency of the light emitting device; in addition, the material selection of the first electrode 307 and the second electrode 308 is not limited to a transparent metal material, and the selection range of the metal material in the touch layer is enlarged.
It will be appreciated that in the first to third embodiments of the present invention, as shown in fig. 8, the first electrode and the second electrode may be replaced by a metal wire, i.e., the metal wire is arranged in the non-light emitting region between each pixel unit to form a metal mesh, without considering the problem of the opening.
Fig. 9 is a film layer structure diagram of a display panel according to a fourth embodiment of the present invention, which is similar to the first embodiment, and is different from the second embodiment in that:
the touch layer 403 includes at least two third electrodes 415 distributed in an array, each third electrode 415 corresponds to at least one touch wire 416, and at least one second insulating layer (not shown) is included between the touch wire 416 and the third electrode 415;
as shown in fig. 10, the touch layer 403 includes the third electrodes 415 distributed in an array (3X 4), and each third electrode 415 corresponds to one of the touch conductive wires 416;
further, the touch conductive line 416 and the gate layer in the array substrate are formed in the same mask process; preferably, the metal material of the touch conducting wire 416 may be molybdenum, aluminum-nickel alloy, molybdenum-tungsten alloy, chromium, copper, or other metals, or a combination of the above metal materials may be used, and in this embodiment, the metal material of the touch conducting wire 416 is molybdenum;
preferably, the material of the second insulating layer is one or more of silicon oxide, silicon nitride, silicon oxynitride, and the like; it can be appreciated that the second insulating layer 417 may be a buffer layer in the array substrate;
further, the third electrode 415 includes at least one third opening, and the third opening corresponds to the pixel units of the display panel one by one;
as shown in fig. 11, the third electrode 415 includes three third openings 418, and the third openings 418 are in one-to-one correspondence with the light emitting units in the pixel unit of the display panel; it can be understood that the third opening is disposed on the same principle as the first opening or the second opening, mainly for improving the light emitting efficiency of the light emitting device and releasing the limitation of the metal material of the third electrode.
It will be appreciated that the above embodiments are exemplified by bottom-emitting OLED displays, but are not limited thereto, and that the present invention may also be used with top-emitting OLED displays, transparent OLED displays, for example.
The invention also provides an electronic device which comprises the display panel. It is understood that the electronic device includes, but is not limited to, a mobile phone, a tablet computer, a computer display, a game console, a television, a display screen, a wearable device, and other household appliances or household appliances with display function.
The invention provides a display panel and an electronic device, wherein the display panel comprises an array substrate, and the array substrate comprises a substrate, a thin film transistor layer positioned on the substrate and a touch control layer positioned between the substrate and the thin film transistor layer. According to the invention, the touch control layer is arranged between the substrate and the thin film transistor layer, so that the film thickness of the display panel is reduced, and the touch control sensitivity of the display screen is improved.
In summary, although the present invention has been described in terms of the preferred embodiments, the preferred embodiments are not limited to the above embodiments, and various modifications and changes can be made by one skilled in the art without departing from the spirit and scope of the invention, and the scope of the invention is defined by the appended claims.
Claims (5)
1. The utility model provides a display panel, this display panel is OLED display panel of bottom luminescence, its characterized in that includes array substrate and is located light emitting device layer on the array substrate, array substrate includes the base plate, is located thin film transistor layer on the base plate and be located the base plate with the touch-control layer between the thin film transistor layer, the touch-control layer includes:
at least two first electrodes, wherein the first electrodes comprise at least one first opening which corresponds to the pixel units of the display panel one by one;
the first electrodes are insulated from the second electrodes and are arranged in a crossing manner, and the second electrodes comprise at least one second opening which corresponds to the pixel units of the display panel one by one;
wherein, the first electrode and the second electrode are both quadrilateral electrode blocks.
2. The display panel of claim 1, wherein at least a first insulating layer is included between the first electrode and the second electrode.
3. The display panel of claim 1, wherein the first electrode is co-layer with the second electrode;
wherein two adjacent first electrodes are electrically connected through a first metal bridge; or (b)
And two adjacent second electrodes are electrically connected through a second metal bridge.
4. The display panel of claim 3, wherein the first metal bridge or the second metal bridge is formed in the same masking process as the gate layer in the array substrate.
5. An electronic device, characterized in that the electronic device comprises the display panel of any one of claims 1-4.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810999136.6A CN108962969B (en) | 2018-08-30 | 2018-08-30 | Display panel and electronic device |
| PCT/CN2018/105651 WO2020042241A1 (en) | 2018-08-30 | 2018-09-14 | Display panel and electronic device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810999136.6A CN108962969B (en) | 2018-08-30 | 2018-08-30 | Display panel and electronic device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN108962969A CN108962969A (en) | 2018-12-07 |
| CN108962969B true CN108962969B (en) | 2023-11-28 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810999136.6A Active CN108962969B (en) | 2018-08-30 | 2018-08-30 | Display panel and electronic device |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN108962969B (en) |
| WO (1) | WO2020042241A1 (en) |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN111930264B (en) * | 2020-09-15 | 2023-12-01 | 武汉华星光电半导体显示技术有限公司 | Touch display panel and touch display device |
Citations (4)
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| KR20140062341A (en) * | 2012-11-14 | 2014-05-23 | 엘지디스플레이 주식회사 | In cell-touch type touch organic light-emitting diode display device |
| CN105742330A (en) * | 2016-03-16 | 2016-07-06 | 京东方科技集团股份有限公司 | Organic light emitting display panel, fabrication method thereof and display device |
| CN107092399A (en) * | 2017-05-12 | 2017-08-25 | 京东方科技集团股份有限公司 | A kind of OLED array and preparation method thereof, touch control display apparatus |
| CN107425041A (en) * | 2017-07-27 | 2017-12-01 | 上海天马微电子有限公司 | A kind of touch-control display panel, device and preparation method |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105183201B (en) * | 2014-05-26 | 2018-05-18 | 上海和辉光电有限公司 | Touching display screen |
| CN104636021A (en) * | 2015-02-02 | 2015-05-20 | 京东方科技集团股份有限公司 | Curved-surface display panel and display device |
| CN105895657B (en) * | 2015-02-13 | 2020-05-05 | 鸿富锦精密工业（深圳）有限公司 | Thin film transistor substrate and touch display panel with same |
| CN107180852B (en) * | 2017-05-18 | 2019-11-15 | 上海天马有机发光显示技术有限公司 | A kind of touch-control display panel and display device |
-
2018
- 2018-08-30 CN CN201810999136.6A patent/CN108962969B/en active Active
- 2018-09-14 WO PCT/CN2018/105651 patent/WO2020042241A1/en active Application Filing
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20140062341A (en) * | 2012-11-14 | 2014-05-23 | 엘지디스플레이 주식회사 | In cell-touch type touch organic light-emitting diode display device |
| CN105742330A (en) * | 2016-03-16 | 2016-07-06 | 京东方科技集团股份有限公司 | Organic light emitting display panel, fabrication method thereof and display device |
| CN107092399A (en) * | 2017-05-12 | 2017-08-25 | 京东方科技集团股份有限公司 | A kind of OLED array and preparation method thereof, touch control display apparatus |
| CN107425041A (en) * | 2017-07-27 | 2017-12-01 | 上海天马微电子有限公司 | A kind of touch-control display panel, device and preparation method |
Also Published As
| Publication number | Publication date |
|---|---|
| CN108962969A (en) | 2018-12-07 |
| WO2020042241A1 (en) | 2020-03-05 |
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