KR102478540B1 - Organic emitting diode display device - Google Patents

Abstract

In the organic light emitting diode display device, a sensor layer including heterogeneous sensors having different sensing methods is disposed on an encapsulation layer. The sensor layer includes a first sensing unit and a second sensing unit disposed outside the first sensing unit, and the sensors of the first sensing unit differ from those of the second sensing unit in a sensing method.

Description

Organic light emitting diode display {ORGANIC EMITTING DIODE DISPLAY DEVICE}

The invention relates to an organic light emitting diode display.

Touch screen panels are used in various types of display devices such as LCD (Liquid Crystal Display), PDP (Plasma Display Panel), OLED (Organic Light Emitting Diode), and AMOLED (Active Matrix Organic Light Emitting Diode). An applied input device is a device that detects a touch signal generated when an external object, such as a finger or a touch pen, approaches or contacts the touch panel.

In an add-on type touch screen panel, a touch film including touch sensors is interposed between a display panel and a cover glass. A display device having an external touch screen panel has a problem in that the thickness is increased due to the touch film interposed between the display panel and the cover glass.

In addition, the touch screen panel of the external structure has the disadvantage of requiring the development of a new touch film when adding additional sensors other than the touch sensor, and the newly developed touch film is additionally interposed between the display panel and the cover glass As a structure, there is a disadvantage of increasing the thickness of the display device equipped with an external touch screen panel.

An object of the present invention is to provide an organic light emitting diode display capable of thinning compared to a display device having an external touch screen panel.

Problems to be solved by the present invention are not limited to those mentioned above, and problems not mentioned will be clearly understood by those skilled in the art from the description below.

In the organic light emitting diode display device, a sensor layer including a first sensing unit and a second sensing unit disposed outside the first sensing unit is disposed on an encapsulation layer. The sensors constituting the first sensing unit and the sensors constituting the second sensing unit have different sensing modes.

The organic light emitting diode display device includes a sensor layer including the touch sensor and the photosensor, a circuit board layer including a transistor array, an encapsulation film layer disposed between the sensor layer and the circuit board layer, and the encapsulation film layer. And a light emitting element layer disposed between the circuit board layer. The sensor layer is disposed on the encapsulation layer. The sensor layer may be directly disposed on the encapsulation layer.

The first sensing unit may include a touch sensor, and the second sensing unit may include a photosensor.

The touch sensor may include first electrodes, second electrodes crossing the first electrodes, and a connection pattern electrically connecting any one of the first electrodes and the second electrodes. can The first electrodes and the second electrodes are disposed on the encapsulation layer.

The photosensor may include a gate electrode, source and drain electrodes, and a semiconductor layer. The gate electrode may be disposed on the encapsulation layer, the source and drain electrodes may be disposed on the gate electrode, and the semiconductor layer may be disposed between the encapsulation layer and the source and drain electrodes. It can be. A partial region of the semiconductor layer may contact the source and drain electrodes.

The gate electrode may be made of the same material as the first electrodes and the second electrodes. The source and drain electrodes may be made of the same material as the connection pattern.

Details of other embodiments are included in the detailed description and drawings.

The present invention can provide an organic light emitting diode display capable of thinning compared to a display device having an external touch screen panel.

Since the organic light emitting diode display device of the present invention includes a touch screen panel having a built-in structure in which heterogeneous sensors having different sensing methods are disposed on the encapsulation layer, unlike a touch screen panel having an external structure, an additional touch film Development is not required, and thus unnecessary development costs can be prevented.

In addition, since the organic light emitting diode display device of the present invention includes a touch screen panel having a built-in structure in which different kinds of sensors having different sensing methods are disposed on the encapsulation layer, unlike a touch screen panel having an external structure, a touch film An increase in thickness due to the addition of can be prevented.

Effects according to the invention are not limited by the contents exemplified above, and more diverse effects are included in the present specification.

1 is a schematic plan view of an organic light emitting diode display device.
2 is a schematic cross-sectional view of an organic light emitting diode display device.
3 schematically shows the shape and arrangement of the first electrode and the second electrode constituting the touch sensor.
4 is a schematic sensing circuit diagram of a photosensor.

Advantages and characteristics of the invention, and methods for achieving them will become clear with reference to embodiments and experimental examples described later in detail in conjunction with the accompanying drawings. It should be noted that the accompanying drawings are only intended to facilitate understanding of the spirit of the technology disclosed in this specification, and should not be construed as limiting the spirit of the technology by the accompanying drawings.

In addition, the invention is not limited to the content disclosed below and can be implemented in various forms, and the content disclosed below ensures that the disclosure of the invention is complete, and that the invention belongs to those skilled in the art. It is provided to fully inform the scope of, and the invention is only defined by the scope of the claims.

If it is determined that a detailed description of a related known technology may obscure the gist of the technology, the detailed description may be omitted.

Like reference numbers designate like elements throughout the specification. The sizes and relative sizes of layers and regions in the drawings may be exaggerated for clarity of explanation.

Although first, second, etc. are used to describe various components, these components are not limited by these terms, of course. These terms are only used to distinguish one component from another component, and unless otherwise stated, the first component may be the second component, of course.

Throughout the specification, unless otherwise stated, each element may be singular or plural.

Throughout the specification, when a part is referred to as "including" or "having" a certain element, this does not exclude other elements unless otherwise stated, but other elements. This means that it can contain

Throughout the specification, when "A and/or B" is used, this means A, B or A and B unless otherwise specified, and when used as "C to D", this means unless otherwise specified As long as there is no, it means C or more and D or less.

When an element or layer is referred to as being "on" or "on" another element or layer, it refers not only directly on the other element or layer, but also through another layer or other element in the middle. All inclusive. On the other hand, when an element is referred to as “directly on” or “directly on”, it indicates that another element or layer is not intervened.

The spatially relative terms "below", "beneath", "lower", "above", "upper", etc. It can be used to easily describe the correlation between elements or components and other elements or components. Spatially relative terms should be understood as encompassing different orientations of elements in use or operation in addition to the orientations shown in the figures.

Hereinafter, with reference to the drawings, the invention will be described in more detail.

1 is a schematic plan view of an organic light emitting diode display device 100 .

Referring to FIG. 1 , the organic light emitting diode display 100 includes a display area DA in which each pixel is arranged in a matrix form and a non-display area NDA arranged around the display area DA. The area DA is an area where a viewer can view an image or information generated by the organic light emitting diode display 100, and the non-display area NDA is an image or information generated by the organic light emitting diode display 100. This is an area in which information cannot be viewed by the viewer, and is also generally referred to as a bezel area. The organic light emitting diode display device 100 includes a plurality of pixels, and includes a circuit board layer (not shown) including a driving circuit (not shown) for each pixel, a light emitting element layer (not shown), and an encapsulation layer (not shown). , and a sensor layer (not shown) are disposed.

2 is a schematic cross-sectional view of the organic light emitting diode display device 100.

Referring to FIGS. 1 and 2 , the sensor layer SL is disposed on the encapsulation layer EC. The encapsulation layer EC is disposed between the sensor layer SL and the circuit board layer PC. The light emitting element layer (OLED) is disposed between the encapsulation layer (EC) and the circuit board layer (PC). The sensor layer SL includes a first sensing unit 1S disposed to overlap the display area DA and a second sensing unit 2S disposed to overlap the non-display area NDA. The second sensing unit 2S is an area disposed outside the first sensing unit 1S. The sensors constituting the first sensing unit 1S and the sensors constituting the second sensing unit 2S may have different sensing modes.

For example, the first sensing unit 1S may include touch sensors TS. At this time, the first sensing unit 1S may operate in a capacitive manner to sense touch pressure through a plurality of capacitance sensors, and a plurality of touch sensors TS having mutual capacitance. include Mutual capacitance may be formed between the crossing electrodes TX and RX.

FIG. 3 schematically illustrates the shape and arrangement of the first electrodes TX ₁ to TX ₅ and the second electrodes RX ₁ to RX ₅ constituting the touch sensor TS. In FIG. 3 , each of the first electrodes TX ₁ to TX ₅ and the second electrodes RX ₁ to RX ₅ is illustrated as having a diamond-shaped plane, but the first electrodes TX ₁ to TX ₅ And the shape of each of the second electrodes RX ₁ to RX ₅ is not limited to this.

Referring to FIGS. 2 and 3 , the first electrode unit 131 includes a plurality of first electrodes TX ₁ to TX ₅ in which a plurality of rhombic patterns are connected in a first direction (eg, a vertical direction in the drawing). can include The second electrode unit 151 may include a plurality of second electrodes RX ₁ to RX ₅ in which a plurality of rhombic patterns are connected in a second direction orthogonal to the first direction (eg, a horizontal direction in the drawing). can In the organic light emitting diode display 100 , the first electrodes TX ₁ to TX ₅ and the second electrodes RX ₁ to RX ₅ may function as touch electrodes.

Each of the first electrodes TX ₁ to TX ₅ connected in the first direction is electrically connected. Meanwhile, each of the first electrodes TX ₁ to TX ₅ connected in the first direction is electrically insulated from the neighboring first electrodes TX ₁ to TX ₅ in the second direction. In addition, each of the second electrodes RX ₁ to RX ₅ connected in the second direction is electrically connected through a connection pattern (BR in FIG. 2 ). Meanwhile, each of the second electrodes RX ₁ to RX ₅ connected in the second direction is electrically insulated from the neighboring second electrodes RX ₁ to RX ₅ in the first direction.

The second electrodes RX ₁ to RX ₅ neighboring in the first direction may be electrically connected through the connection pattern BR. The connection pattern BR electrically connects the second electrodes RX ₁ to RX ₅ while preventing a short between the first electrodes TX ₁ to TX ₅ and the second electrodes RX ₁ to RX ₅ . function to connect to. In FIG. 3 , the connection pattern BR is illustrated as being provided on the plurality of second electrodes RX ₁ to RX ₅ , but is not limited thereto, and may be provided on the plurality of first electrodes TX ₁ to TX ₅ may be

The connection pattern BR may be made of a transparent conductive material such as indium tin oxide (ITO) or indium zinc oxide (IZO) or a metal material. When the material of the connection pattern BR having a relatively narrow width is made of a metal material having high conductivity, there is an advantage in that electrical conductivity can be improved while satisfying light transmittance of a predetermined requirement.

The first electrodes TX ₁ to TX ₅ connected in the first direction may be connected to a Tx wire (not shown) connected to a Tx driver (not shown). The second electrodes RX ₁ to RX ₅ connected in the second direction may be connected to an Rx wire (not shown) connected to an Rx driver (not shown). The Tx wiring (not shown) is a driving signal wiring that supplies charge to the touch sensors (TS in FIG. 2 ) by applying a sensor driving signal to each of the touch sensors (TS in FIG. 2 ). The Rx wire (not shown) is a sensor wire that is connected to the touch sensors (TS of FIG. 2 ) and supplies charges of the touch sensors (TS of FIG. 2 ) to the touch sensing circuit (not shown).

In the mutual capacitance sensing method, a driving signal is applied to the Tx electrode (TX in FIG. 2) through a Tx wire (not shown) to supply electric charge to the touch sensor (TS in FIG. 2), and the Rx wire is synchronized with the sensor driving signal. By sensing the capacitance change of the mutual capacitance sensor through (not shown), the first sensing unit (1S in FIG. 2 ) can sense the touch pressure through the mutual capacitance sensing method. A touch sensing circuit (not shown) determines whether a conductive material (eg, a finger) has been touched and its position by sensing the capacitance variation of the touch sensor (TS in FIG. 2 ) before and after the touch. That is, when the conductive material approaches the mutual capacitance, the amount of charge in the mutual capacitance decreases, and thus a touch input, a gesture, and the like can be sensed.

For example, the second sensing unit (2S in FIG. 2 ) may be composed of photosensors, and examples of the photosensors include photo thin film transistors (Photo TFTs). At this time, the second sensing unit (2S in FIG. 2) changes the signal detected by the lead-out integrated circuit (not shown) according to the amount of light sensed by the photo thin film transistor (Photo TFT), so that fingerprints, documents, and images Images such as scans and touch inputs may be sensed.

4 is a schematic sensing circuit diagram of a photosensor.

2 and 4, a first driving voltage is applied to the source electrode (S in FIG. 2) of the photo thin film transistor (Photo TFT) and the gate electrode (GE in FIG. 2) of the photo thin film transistor (Photo TFT) When a second driving voltage is applied and a predetermined light is sensed in the semiconductor layer (ACT in FIG. 2) of the photo thin film transistor (Photo TFT), the source electrode (Fig. A photocurrent flowing from S of 2) to the drain electrode (D of FIG. 2) via the channel is generated. The photocurrent flows from the drain electrode (D in FIG. 2 ) of the photo thin film transistor (Photo TFT) to the storage electrode of the storage capacitor Cst, and accordingly, the storage capacitor Cst is charged by the photocurrent. Thereafter, the charge charged in the storage capacitor Cst is read from the Read Out Integrated Circuit (ROIC) via the thin film transistor READ and the lead out line.

For example, referring to FIG. 2 , when the first sensing unit 1S is composed of touch sensors TS and the second sensing unit 2S is composed of photosensors, the organic light emitting diode display device ( 100) can detect whether or not a user touches by using touch sensors TS, and when a user's touch occurs, it can detect touch coordinates by using photo sensors, and when a user's touch does not occur , it is possible to detect the illuminance distribution of the organic light emitting diode display device 100 by utilizing photo sensors.

Referring to FIG. 2 , a touch sensor TS may be disposed on a partial region of the encapsulation layer EC corresponding to the first sensing unit 1S. Specifically, Tx wires TXL and Rx wires RLX corresponding to the first sensing unit 1S may be arranged spaced apart from each other on the encapsulation film layer EC, and the Tx wires TXL and First electrodes TX and second electrodes RX may be disposed on the Rx wires RXL, respectively. As shown, on the encapsulation layer EC, Tx wires TXL and Rx wires RXL may be directly disposed, and on the Tx wires TXL and Rx wires RXL, respectively, first The electrodes TX and the second electrodes RX may be directly disposed. The second electrodes RX may be electrically connected to each other through the connection pattern BR. For example, the Tx wires TXL and the Rx wires RXL may be made of a transparent conductive material, and examples of the transparent conductive material include indium tin oxide (ITO) and indium zinc oxide (IZO). can For example, the first electrodes TX and the second electrodes RX may be made of Al, AlNd, Ag, Mo, MoTi, Cu, Cr, or the like.

Each of the Tx wires (TXL), Rx wires (RXL), first electrodes (TX) and second electrodes (RX) are electrically insulated from each other by a passivation layer (PAS) interposed therebetween, The passivation layer PAS may be formed to have a predetermined thickness on the first electrodes TX and the second electrodes RX. For example, in some areas of the passivation layer PAS overlapping the connection pattern BR, a predetermined thickness is formed between the first electrodes TX and the second electrodes RX and the connection pattern BR. A passivation layer (PAS) may be disposed.

The passivation layer PAS may have contact holes TH in areas overlapping the second electrodes RX, and the second electrodes RX may be connected to the connection pattern BR through the contact holes TH. ) can be associated with A capping layer CAP may be further disposed on the passivation layer PAS and the connection pattern BR. In other words, the capping layer CAP may cover the top of the touch sensor TS. The capping layer CAP and the passivation layer PAS may be formed of silicon oxide, silicon nitride, or the like, respectively.

Meanwhile, a photo thin film transistor (Photo TFT) may be disposed on a partial region of the encapsulation film layer EC corresponding to the second sensing unit 2S. Specifically, a gate electrode GE may be disposed on the encapsulation layer EC. As shown, the gate electrode GE may be directly disposed on the encapsulation layer EC. The gate electrode GE is, for example, an aluminum-based metal such as aluminum (Al) and an aluminum alloy, a silver-based metal such as silver (Ag) and a silver alloy, or a copper-based metal such as copper (Cu) and a copper alloy. It may be made of a metal, a molybdenum-based metal such as molybdenum (Mo) and a molybdenum alloy, chromium (Cr), titanium (Ti), tantalum (Ta), and the like. A semiconductor layer ACT may be disposed on the gate electrode GE, and a gate insulating layer GI may be interposed between the gate electrode GE and the semiconductor layer ACT.

The gate insulating layer GI may be formed of, for example, silicon oxide or silicon nitride. The semiconductor layer ACT may be made of, for example, amorphous silicon or an organic material, and may include a channel region (not shown), a source region (not shown), and a drain region (not shown). A source region (not shown) and a drain region (not shown) are respectively disposed at both ends of the channel region (not shown) and may be connected to the source and drain electrodes S and D, respectively.

On the semiconductor layer ACT, a protective layer PL provided with through holes TH for connecting the source and drain electrodes S and D to the source region (not shown) and the drain region (not shown), respectively. may be disposed, and each of the source electrode S and the drain electrode D may be connected to a source region (not shown) and a drain region (not shown) through the through holes TH.

The protective layer PL may be formed of silicon oxide, silicon nitride, or the like. A capping layer CAP may be further disposed on the source and drain electrodes S and D. The capping layer CAP may cover an upper portion of the photo thin film transistor (Photo TFT). The capping layer CAP may be formed of silicon oxide, silicon nitride, or the like.

The first electrodes TX, the second electrodes RX, and the gate electrode GE may be simultaneously formed in a one-step process. In this case, the first electrodes TX, The second electrodes RX and the gate electrode GE may be made of the same material.

In addition, the connection pattern BR and the source and drain electrodes S and D may be simultaneously formed in a single process. At this time, the connection pattern BR and the source and drain electrodes S and D Silver, may be made of the same material.

In some cases, the passivation layer (PAS) may be divided into a lower passivation layer (L-PAS) and an upper passivation layer (H-PAS). In this case, the lower passivation layer (L-PAS) and the gate insulating layer (GI) may be simultaneously formed in the same process and may be made of the same material. Also, at this time, the upper passivation layer (H-PAS) and the protective layer (PL) may be simultaneously formed in the same process and may be made of the same material.

The encapsulation layer EC is disposed between the sensor layer SL and the circuit board layer PC. The encapsulation layer EC may function to prevent external moisture or air from penetrating into the light emitting element and protect the light emitting element from external impact. The encapsulation layer EC may have a structure in which organic material layers (not shown) and inorganic material layers (not shown) are alternately stacked. The thickness of the encapsulation layer may be approximately 10 μm to 1000 μm. The organic material layer (not shown) may include an acrylic resin, an epoxy resin, a siloxane resin, a urethane resin, a polycarbonate resin, and the like. The thickness of the organic material layer may be approximately 1 μm to 100 μm. The inorganic material layer (not shown) may include a silicon oxide layer (SiOx), a silicon nitride layer (SiNx), a silicon nitride layer (SiOxNy), and the like. The thickness of the inorganic material layer may be approximately 0.01 μm to 5 μm.

The light emitting element layer (OLED) is disposed between the encapsulation layer (EC) and the circuit board layer (PC). The light emitting element layer OLED may include a pixel electrode (not shown), a counter electrode (not shown), and a light emitting layer (not shown). The pixel electrode (not shown) and the counter electrode (not shown) may each function as one of an anode and a cathode.

In the case of a top emission type structure that implements an image in the direction of a counter electrode (not shown), the counter electrode (not shown) may be composed of a light transmissive electrode, and the pixel electrode (not shown) may be composed of a reflective electrode. there is. The counter electrode (not shown) may include, for example, a layer made of a light-transmitting metal oxide such as ITO, IZO, or ZnO. The pixel electrode (not shown) may include, for example, a layer made of a metal such as Ag, Mg, Al, Pt, Pd, Au, Ni, Nd, Ir, Cr, Li, or Ca. In the case of a bottom emission type structure that implements an image in the direction of a pixel electrode (not shown), the pixel electrode (not shown) may be composed of a light transmissive electrode, and the counter electrode (not shown) may be composed of a reflective electrode. there is.

A light emitting layer (not shown) is interposed between the pixel electrode (not shown) and the counter electrode (not shown). Between any one of the pixel electrode (not shown) and the counter electrode (not shown) and the light emitting layer (not shown), a hole injection layer (not shown), a hole transport layer (not shown), and an electron transport layer (not shown) are optionally formed. , a sperm injection layer (not shown) may be disposed. For example, in the organic light emitting diode display device 100 having a top emission type structure, an electron injection layer (not shown) and an electron transport layer (not shown) are disposed between a counter electrode (not shown) functioning as a cathode and an emission layer. A hole injection layer (not shown) and a hole transport layer (not shown) may be disposed between a pixel electrode (not shown) functioning as an anode and a light emitting layer (not shown).

The circuit board layer PC includes a driving circuit (not shown) disposed on a transparent substrate (not shown). The transparent substrate (not shown) may be a generally used glass substrate, a transparent polymer resin substrate, or the like, and is not particularly limited. The driving circuit (not shown) includes a switching thin film transistor, a driving transistor, and a capacitor.

Each pixel includes a switching thin film transistor for transmitting a data signal, a driving thin film transistor for driving a light emitting device according to the data signal, and one capacitor for maintaining a data voltage. The switching thin film transistor is connected to the scan line and the data line, and charges the capacitor with the data voltage in response to the scan pulse. The driving thin film transistor is connected to the power line and the capacitor, and controls the amount of current supplied to the light emitting device according to the data voltage charged in the capacitor to adjust the amount of light emitted from the light emitting device.

Meanwhile, the organic light emitting diode display 100 may include a routing line RL in the pad part PAD, and the routing line RL is a touch driver (not shown) disposed in the pad part PAD. can be connected with The touch driver (not shown) may include a Tx driver (not shown), an Rx driver (not shown), and a touch controller (not shown).

A touch screen panel with an existing external structure has a structure in which a touch film is interposed between a display panel and a cover glass, and there is a problem in that the thickness of the display device to which the touch film is applied is increased. Moreover, if an additional sensor is required along with the touch sensor, a new sensing film equipped with the additional sensor must be interposed between the display panel and the cover glass along with the existing touch film, and the addition of the new sensing film reduces the thickness of the display device. can be made thicker. In addition, an additional process may occur due to the addition of a new sensing film, which may result in additional cost.

The organic light emitting diode display device according to the present invention implements a structure in which a touch screen panel is embedded in a display panel by forming a sensor layer having heterogeneous sensors having different sensing methods on an encapsulation film layer, thereby implementing a touch film or an additional diode display device. When the sensing film is applied, the additional sensing film interposed together with the touch film can be removed between the display panel and the cover glass, so that a thin thickness can be realized compared to a display device to which a touch screen panel of an existing external structure is applied. There are advantages.

Since the organic light emitting diode display device according to the present invention can be used as it is without changing the manufacturing process of the existing organic light emitting diode display device, when a touch film or an additional sensing film is applied, the touch film and the additional sensing film cover the display panel. Since the intervening process between the glasses can be removed and the additional process for forming the sensor layer equipped with heterogeneous sensors with different sensing methods on the encapsulation layer is not required, a touch screen panel with an existing external structure is applied. Unlike display devices, there is an advantage in that no additional costs are incurred due to the introduction of an additional process due to the addition of a new sensing film.

In addition, since the organic light emitting diode display device according to the present invention does not require the development of a new sensing film for the introduction of additional sensors other than the touch sensor, it provides additional sensing compared to a display device to which a touch screen panel of an existing external structure is applied. It is possible to reduce the cost consumed in the development of the film, and thus has the advantage of securing relatively excellent price competitiveness.

In addition, in a display device to which a conventional external structure touch screen panel is applied, a touch sensor is formed on the upper substrate of the display panel, or a touch sensor and an additional sensor are formed, and each of them is connected to the sensor driver of the lower substrate of the display panel. While requiring a process for connection, in the organic light emitting diode display device according to the present invention, since heterogeneous sensors and a sensor driver connected thereto are formed on the lower substrate, unlike conventional cases, heterogeneous sensors and a sensor driver It does not require a process to connect the Therefore, the organic light emitting diode display device according to the present invention has the advantage of securing relatively excellent price competitiveness by reducing man-hours compared to a display device to which a touch screen panel having an existing external structure is applied.

Although the embodiments have been described with reference to the accompanying drawings, the invention is not limited to the above embodiments, but can be manufactured in a variety of different forms by combining the contents disclosed in each embodiment, and is common in the technical field to which the invention belongs. Those skilled in the art will understand that the invention can be embodied in other specific forms without changing the technical spirit or essential characteristics of the invention. Therefore, the embodiments described above should be understood as illustrative in all respects and not limiting.

100: organic light emitting diode display
SL: sensor layer
EC: encapsulation layer
OLED: light emitting element layer
PC: circuit board
1S: first sensing unit, 2S: second sensing unit
TX: first electrode, RX: second electrode
BR: connection pattern
GE: gate electrode
ACT: semiconductor layer
S: source electrode
D: drain electrode
TH: contact hole
PAS: passivation layer

Claims (6)

An organic light emitting diode display device including a first sensing unit and a second sensing unit disposed outside the first sensing unit,
a circuit board layer including a driving circuit;
a light emitting element layer disposed on the circuit board layer;
an encapsulation layer disposed on the light emitting element layer;
an insulating layer disposed on the encapsulation layer; and
A protective layer disposed on the insulating layer; includes,
The first sensing unit includes a touch sensor including first electrodes and second electrodes crossing the first electrodes,
The second sensing unit includes a photo sensor including a gate electrode and a semiconductor layer disposed on the gate electrode,
The first electrodes, the second electrodes, and the gate electrode are disposed on the encapsulation layer,
The insulating layer covers the first electrodes, the second electrodes and the gate electrode,
The semiconductor layer is disposed between the insulating layer and the protective layer,
organic light emitting diode display. According to claim 1,
The touch sensor further includes a connection pattern electrically connecting any one of the first electrodes and the second electrodes,
The photo sensor further includes a source electrode and a drain electrode disposed on the semiconductor layer,
The source electrode and the drain electrode pass through the passivation layer and are connected to the semiconductor layer, and the connection pattern passes through the passivation layer and is connected to one of the first electrodes and the second electrodes. , an organic light emitting diode display. According to claim 2,
and a capping layer covering the source electrode, the drain electrode, and the connection pattern on the passivation layer. According to claim 1,
The organic light emitting diode display device, wherein the gate electrode is made of the same material as the first electrodes and the second electrodes. According to claim 2,
The source electrode and the drain electrode are made of the same material as the connection pattern, the organic light emitting diode display device.

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