KR20190076154A - Organic emitting diode display device - Google Patents

Abstract

In an organic light emitting diode display device, a sensor layer including heterogeneous sensors having different sensing methods is disposed on an encapsulation layer. The sensor layer includes a first sensing part and a second sensing part disposed outside the first sensing part. The sensors of the first sensing part are different from the sensors of the second sensing part. It is possible to obtain a thin organic light emitting diode display device.

Description

[0001] ORGANIC EMITTING DIODE DISPLAY DEVICE [0002]

The invention relates to an organic light emitting diode display.

BACKGROUND ART [0002] Touch screen panels are widely used in various types of display devices such as a liquid crystal display (LCD), a plasma display panel (PDP), an organic light emitting diode (OLED), and an active matrix organic light emitting diode (AMOLED) An input device to which an external object such as a finger or a touch pen detects a touch signal generated when the touch panel is accessed or contacted.

An add-on type touch screen panel is a touch film including touch sensors interposed between a display panel and a cover glass. The display device provided with the external touch screen panel has a problem that the thickness thereof becomes thick due to the touch film interposed between the display panel and the cover glass.

In addition, a touch screen panel of an external structure has a disadvantage in that it is necessary to newly develop a touch film when an additional sensor other than the touch sensor is added. Moreover, a newly developed touch film is additionally provided between the display panel and the cover glass The thickness of the display device provided with the external touch screen panel is increased.

The present invention provides an organic light emitting diode display device capable of being thinned as compared with a display device provided with an external touch screen panel.

The problems to be solved by the invention are not limited to those mentioned above, and the problems which are not mentioned can be clearly understood by those skilled in the art from the following description.

In the organic light emitting diode display, a sensor layer including a first sensing unit and a second sensing unit disposed at an outer periphery of the first sensing unit is disposed on the sealing film layer. The sensors constituting the first sensing unit and the sensors constituting the second sensing unit are different from each other in sensing mode.

The organic light emitting diode display device includes a sensor layer including the touch sensor and the photosensor, a circuit substrate layer including a transistor array, a sealing film layer disposed between the sensor layer and the circuit substrate layer, And a light emitting device layer disposed between the circuit substrate layer and the light emitting device layer. The sensor layer is disposed on the sealing layer. The sensor layer may be disposed directly on the sealing layer.

The first sensing unit may include a touch sensor, and the second sensing unit may include a photosensor.

The touch sensor may include first electrodes, second electrodes crossing the first electrodes, and a connection pattern for electrically connecting any one of the first electrodes and the second electrodes . The first electrodes and the second electrodes are disposed on the sealing layer.

The photosensor may include a gate electrode, a source and a drain electrode, and a semiconductor layer. The source electrode and the drain electrode may be disposed on the gate electrode and the semiconductor layer may be disposed between the sealing layer and the source and drain electrodes, . A part of the semiconductor layer may be in contact with the source and drain electrodes.

The gate electrode may be made of the same material as the first electrodes and the second electrodes. The source and drain electrodes may be made of the same material as the connection pattern.

The details of other embodiments are included in the detailed description and drawings.

The present invention can provide an organic light emitting diode display device that is thinner than a display device provided with an external touch screen panel.

The organic light emitting diode display device of the present invention includes a built-in touch screen panel in which different types of sensors having different sensing methods are disposed on the sealing film layer. Therefore, unlike the touch screen panel of the external structure, Development is not required, and unnecessary expenditure of development cost can be prevented.

In addition, since the organic light emitting diode display device of the present invention has a built-in touch screen panel in which different types of sensors having different sensing methods are disposed on the sealing film layer, unlike the touch screen panel of the external structure, It is possible to prevent an increase in thickness due to the addition of

The effects according to the invention are not limited by the contents exemplified above, and more various effects are included in the specification.

1 is a schematic plan view of an organic light emitting diode display device.
2 is a schematic cross-sectional view of an organic light emitting diode display device.
3 schematically shows the shape and arrangement of the first electrode and the second electrode constituting the touch sensor.
4 is a schematic sensing circuit diagram of a photosensor.

BRIEF DESCRIPTION OF THE DRAWINGS The features and advantages of the present invention will become more apparent from the following detailed description taken in conjunction with the accompanying drawings, in which: FIG. BRIEF DESCRIPTION OF THE DRAWINGS The accompanying drawings, which are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and, together with the description, serve to explain the principles of the invention.

It is to be understood that the invention is not limited to the details of the disclosure herein described, but may be embodied in many different forms and should not be construed as being limited to the exemplary embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete and will fully convey the concept of the invention to those skilled in the art. And the invention is only defined by the scope of the claims.

A detailed description of the related art may be omitted if it is determined that the technical gist of the present invention may be blurred.

Like reference numerals refer to like elements throughout the specification. The dimensions and relative sizes of layers and regions in the figures may be exaggerated for clarity of illustration.

Although the first, second, etc. are used to describe various components, it goes without saying that these components are not limited by these terms. These terms are used only to distinguish one element from another, and it goes without saying that the first element may be the second element unless specifically stated otherwise.

Throughout the specification, each element may be singular or plural, unless specifically stated otherwise.

It is to be understood that throughout the specification, when an element is referred to as being "having", "having", or "having" an element, it should be understood that this does not exclude other elements, It can be included.

In the specification, "A and / or B" means A, B, or A and B unless otherwise indicated, and "C to D" C means more than C and D or less.

It is to be understood that when an element or layer is referred to as being "on" or " on "of another element or layer, All included. On the other hand, a device being referred to as "directly on" or "directly above " indicates that no other device or layer is interposed in between.

The terms spatially relative, "below", "beneath", "lower", "above", "upper" May be used to readily describe a device or a relationship of components to other devices or components. Spatially relative terms should be understood to include, in addition to the orientation shown in the drawings, terms that include different orientations of the device during use or operation.

Hereinafter, the present invention will be described in more detail with reference to the drawings.

1 is a schematic plan view of an organic light emitting diode display device 100. FIG.

1, the organic light emitting diode display 100 includes a display area DA in which each pixel is arranged in a matrix form and a non-display area NDA disposed in the periphery of the display area DA, The area DA is an area in which an image or information generated in the organic light emitting diode display device 100 can be viewed by a viewer and the non-display area NDA is an area or an image generated in the organic light emitting diode display device 100 It is an area where information can not be viewed by a viewer, and is generally referred to as a bezel area. The organic light emitting diode display 100 includes a plurality of pixels, a circuit substrate layer (not shown) including a driving circuit (not shown), a light emitting element layer (not shown), a sealing film layer (not shown) , And a sensor layer (not shown).

2 is a schematic cross-sectional view of the organic light emitting diode display device 100. FIG.

Referring to Figs. 1 and 2, the sensor layer SL is disposed on the sealing film layer EC. The sealing film layer EC is disposed between the sensor layer SL and the circuit substrate layer PC. The light emitting element layer OLED is disposed between the sealing film layer EC and the circuit substrate layer PC. The sensor layer SL includes a first sensing portion 1S arranged to overlap the display region DA and a second sensing portion 2S arranged to overlap the non-display region NDA. The second sensing unit 2S is an area disposed on the outer periphery of the first sensing unit 1S. The sensors constituting the first sensing unit 1S and the sensors constituting the second sensing unit 2S may have different sensing modes.

For example, the first sensing unit 1S may be composed of touch sensors TS. At this time, the first sensing unit 1S can operate in a capacitive sensing manner to sense the touch pressure through a plurality of capacitive sensors, and a plurality of touch sensors TS having mutual capacitance . The mutual capacitance can be formed between the intersecting electrodes TX and RX.

3 schematically shows the shapes and arrangement of the first electrodes TX ₁ to TX ₅ and the second electrodes RX ₁ to RX ₅ constituting the touch sensor TS. 3, each of the first electrodes TX ₁ to TX ₅ and the second electrodes RX ₁ to RX ₅ has a rhombic shape. However, the first electrodes TX ₁ to TX ₅ , And the shapes of the second electrodes RX ₁ to RX ₅ are not limited thereto.

2 and 3, the first electrode unit 131 includes a plurality of first electrodes TX ₁ to TX ₅ connected in a first direction (for example, a longitudinal direction in the drawing) . ≪ / RTI > The second electrode unit 151 includes a plurality of second electrodes RX ₁ to RX ₅ connected in a second direction orthogonal to the first direction (for example, the horizontal direction in the drawing) . In the organic light emitting diode display 100, the first electrodes TX ₁ to TX ₅ and the second electrodes RX ₁ to RX ₅ may function as touch electrodes.

Each of the first electrodes TX ₁ to TX ₅ connected in the first direction is electrically connected. On the other hand, each of the first electrodes TX ₁ to TX ₅ connected in the first direction is electrically insulated from the first electrodes TX ₁ to TX ₅ neighboring in the second direction. Also, each of the second electrodes RX ₁ to RX ₅ connected in the second direction is electrically connected through a connection pattern (BR in FIG. 2). On the other hand, each of the second electrodes RX ₁ to RX ₅ connected in the second direction is electrically insulated from the second electrodes RX ₁ to RX ₅ neighboring in the first direction.

The second electrodes RX ₁ to RX ₅ neighboring in the first direction may be electrically connected through the connection pattern BR. The connection pattern BR electrically connects the second electrodes RX ₁ to RX ₅ to the first electrodes TX ₁ to TX ₅ while preventing a short between the first electrodes TX ₁ to TX ₅ and the second electrodes RX ₁ to RX ₅ . As shown in FIG. In FIG. 3, the connection pattern BR is illustrated as being provided in the plurality of second electrodes RX ₁ to RX ₅ , but the present invention is not limited thereto. The plurality of first electrodes TX ₁ to TX ₅ It is possible.

The connection pattern BR may be made of a transparent conductive material such as ITO (Indium Tin Oxide) or IZO (Indium Zinc Oxide) or a metal material. When the material of the connection pattern BR having a relatively narrow width is made of a metal having high conductivity, there is an advantage that the electrical conductivity can be improved while satisfying the light transmittance of a predetermined requirement.

The first electrodes TX ₁ to TX ₅ connected in a first direction may be connected to a Tx wire (not shown) connected to a Tx driver (not shown). The second electrodes RX ₁ to RX ₅ connected in the second direction may be connected to an Rx wire (not shown) connected to an Rx driver (not shown). The Tx wiring (not shown) is a driving signal wiring which applies a sensor driving signal to each of the touch sensors (TS in Fig. 2) to supply electric charges to the touch sensor (TS in Fig. 2). The Rx wiring (not shown) is a sensor wiring connected to the touch sensor (TS in Fig. 2) to supply the charge of the touch sensor (TS in Fig. 2) to a touch sensing circuit (not shown).

In the mutual capacitance sensing method, a driving signal is applied to a Tx electrode (TX in FIG. 2) through a Tx wiring (not shown) to supply electric charge to a touch sensor (TS in FIG. 2) (Not shown), the first sensing unit (1S in FIG. 2) can sense the touch pressure through a mutual capacitance sensing method. A touch sensing circuit (not shown) senses a capacitance change amount of the touch sensor (TS in Fig. 2) before and after the touch to judge whether or not a conductive substance (for example, a finger) touches and its position. That is, when the conductive material approaches the mutual capacitance, the amount of charge of the mutual capacitance decreases, so that the touch input, the gesture, and the like can be detected.

For example, the second sensing unit (2S in FIG. 2) may be constituted by photo sensors, and an example of the photosensor is a photo TFT (Photo TFT). At this time, the signal detected by the lead-out integrated circuit (not shown) changes depending on the amount of light sensed by the photo TFT (Photo TFT) in the second sensing unit (2S in FIG. 2) Scan, touch input, and the like.

4 is a schematic sensing circuit diagram of a photosensor.

2 and 4, a first driving voltage is applied to a source electrode (S in FIG. 2) of a photo TFT and a gate electrode (GE in FIG. 2) of a photo TFT (Photo TFT) (ACT in FIG. 2) of the photo TFT (Photo TFT) is applied to the source electrode of the photo TFT (Photo TFT) according to the amount of the sensed light, (S in Fig. 2), a photocurrent is generated through the channel to the drain electrode (D in Fig. 2). This photocurrent flows from the drain electrode (D in Fig. 2) of the photo TFT to the storage electrode of the storage capacitor Cst, thereby charging the storage capacitor Cst with the charge due to the photocurrent. Thereafter, the charge stored in the storage capacitor Cst is read out from the readout integrated circuit (Read Out IC: ROIC) via the thin film transistor READ and the lead-out line.

For example, referring to FIG. 2, when the first sensing unit 1S is composed of touch sensors TS and the second sensing unit 2S is composed of photo sensors, the organic light emitting diode display device 100 can detect whether or not a user touches by utilizing the touch sensors TS and can detect touch coordinates using photo sensors when a user touch occurs, , The illuminance distribution of the organic light emitting diode display device 100 can be detected using photo sensors.

Referring to FIG. 2, a touch sensor TS may be disposed on a partial area of the sealing film layer EC corresponding to the first sensing portion 1S. Specifically, the Tx wirings TXL and the Rx wirings RLX corresponding to the first sensing portion 1S may be arranged on the sealing film EC so as to be spaced apart from each other, and the Tx wirings TXL and On the Rx lines RXL, first electrodes TX and second electrodes RX may be disposed, respectively. As shown, Tx wirings TXL and Rx wirings RXL can be arranged directly on the sealing film EC, and on the Tx wirings TXL and Rx wirings RXL, The electrodes TX and the second electrodes RX may be disposed directly. The second electrodes RX may be electrically connected to each other through the connection pattern BR. For example, the Tx wirings TXL and the Rx wirings RXL may be made of a transparent conductive material. Examples of the transparent conductive material include indium tin oxide (ITO), indium zinc oxide (IZO) . For example, the first electrodes TX and the second electrodes RX may be formed of Al, AlNd, Ag, Mo, MoTi, Cu, Cr, or the like.

Each of the Tx wirings TXL, the Rx wirings RXL, the first electrodes TX and the second electrodes RX are electrically insulated from each other by a passivation layer PAS interposed therebetween, The passivation layer PAS may be formed to have a predetermined thickness on the first electrodes TX and the second electrodes RX. For example, a predetermined thickness may be provided between the first electrodes TX and the second electrodes RX and the connection pattern BR in a part of the passivation layer PAS overlapping the connection pattern BR A passivation layer (PAS) may be disposed.

The passivation layer PAS may include contact holes TH in a region overlapping the second electrodes RX and the second electrodes RX may be connected to the connection pattern BR through the contact holes TH. Lt; / RTI > A capping layer (CAP) may be further disposed on the passivation layer (PAS) and the connection pattern (BR). In other words, the capping layer (CAP) can cover the upper portion of the touch sensor TS. The capping layer (CAP) and the passivation layer (PAS) may be made of silicon oxide, silicon nitride, or the like.

On the other hand, a photo-film transistor (Photo TFT) may be disposed on a partial region of the sealing film layer EC corresponding to the second sensing portion 2S. Specifically, on the sealing film layer EC, the gate electrode GE can be disposed. As shown, the gate electrode GE can be disposed directly on the sealing film layer EC. The gate electrode GE may be formed of, for example, an aluminum series metal such as aluminum (Al) and an aluminum alloy, a silver series metal such as silver (Ag) and a silver alloy, a copper series such as copper A metal of molybdenum series such as molybdenum (Mo) and molybdenum alloy, chromium (Cr), titanium (Ti), tantalum (Ta) or the like. A semiconductor layer ACT may be disposed on the gate electrode GE and a gate insulating layer GI may be interposed between the gate electrode GE and the semiconductor layer ACT.

The gate insulating layer GI may be made of, for example, silicon oxide, silicon nitride, or the like. The semiconductor layer ACT may be made of, for example, amorphous silicon or an organic material and may include a channel region (not shown), a source region (not shown), and a drain region (not shown). The source region (not shown) and the drain region (not shown) are disposed at both ends of a channel region (not shown), respectively, and may be connected to the source electrode and the drain electrode S, D, respectively.

A protective layer PL provided with through holes TH for connecting the source electrode and the drain electrode S to the source region (not shown) and the drain region (not shown) is formed on the semiconductor layer ACT, And each of the source electrode S and the drain electrode D through the through holes TH can be connected to a source region (not shown) and a drain region (not shown).

The protective layer PL may be made of silicon oxide, silicon nitride, or the like. A capping layer (CAP) may be further disposed on the source electrode and the drain electrode (S, D). The capping layer (CAP) may cover the top of the photo TFT (Photo TFT). The capping layer (CAP) may be made of silicon oxide, silicon nitride, or the like.

The first electrodes TX, the second electrodes RX, and the gate electrodes GE may be formed simultaneously in a one-step process. In this case, the first electrodes TX, The second electrodes RX and the gate electrodes GE may be made of the same material.

The connection pattern BR and the source and drain electrodes S and D may be formed simultaneously in a single process. In this case, the connection pattern BR, the source electrode S and the drain electrode S, May be made of the same material.

In some cases, the passivation layer PAS may be divided into a lower passivation layer (L-PAS) and an upper passivation layer (H-PAS). At this time, the lower passivation layer (L-PAS) and the gate insulating layer (GI) may be formed simultaneously in the same process and may be made of the same material. At this time, the upper passivation layer (H-PAS) and the passivation layer (PL) may be formed simultaneously in the same process and may be made of the same material.

The sealing film layer EC is disposed between the sensor layer SL and the circuit substrate layer PC. The sealing film layer EC can prevent external moisture or air from penetrating into the light emitting element and protect the light emitting element from external impact. The sealing film layer EC may have a structure in which an organic material layer (not shown) and an inorganic material layer (not shown) are alternately stacked. The thickness of the encapsulation layer may be approximately 10 [mu] m to 1000 [mu] m. The organic material layer (not shown) may include an acrylic resin, an epoxy resin, a siloxane resin, a urethane resin, a polycarbonate resin, and the like. The thickness of the organic material layer may be approximately 1 [mu] m to 100 [mu] m. The inorganic layer (not shown) may include a silicon oxide film (SiOx), a silicon nitride film (SiNx), a silicon oxide film (SiOxNy), or the like. The thickness of the inorganic layer may be approximately 0.01 [mu] m to 5 [mu] m.

The light emitting element layer OLED is disposed between the sealing film layer EC and the circuit substrate layer PC. The light emitting element layer OLED may include a pixel electrode (not shown), a counter electrode (not shown), and a light emitting layer (not shown). The pixel electrode (not shown) and the counter electrode (not shown) may function as either the anode or the cathode, respectively.

In the case of a top emission type structure that implements an image in the direction of the counter electrode (not shown), the counter electrode (not shown) may be composed of a light transmitting type electrode and the pixel electrode have. The counter electrode (not shown) may include a layer made of a light-transmitting metal oxide such as ITO, IZO, or ZnO. The pixel electrode (not shown) may include a layer made of a metal such as Ag, Mg, Al, Pt, Pd, Au, Ni, Nd, Ir, Cr, In the case of a bottom emission type structure in which an image is realized in the direction of a pixel electrode (not shown), a pixel electrode (not shown) may be composed of a light transmitting type electrode, and a counter electrode (not shown) have.

A light emitting layer (not shown) is interposed between the pixel electrode (not shown) and the counter electrode (not shown). A hole injecting layer (not shown), a hole transporting layer (not shown), and an electron transporting layer (not shown) are selectively formed between the pixel electrode (not shown) and the counter electrode (not shown) , And a sperm injection layer (not shown). For example, in the organic light emitting diode display device 100 of the top emission type structure, an electron injection layer (not shown) and an electron transport layer (not shown) are arranged between a counter electrode (not shown) And a hole injecting layer (not shown) and a hole transporting layer (not shown) may be disposed between a pixel electrode (not shown) functioning as an anode and a light emitting layer (not shown).

The circuit board layer PC includes a driving circuit (not shown) arranged on a transparent substrate (not shown). The transparent substrate (not shown) may be a commonly used glass substrate, a transparent polymer resin substrate or the like, and is not particularly limited. The driving circuit (not shown) includes a switching thin film transistor, a driving transistor, and a capacitor.

Each pixel includes a switching thin film transistor for transmitting a data signal, a driving thin film transistor for driving the light emitting element in accordance with the data signal, and one capacitor for holding the data voltage. The switching thin film transistor is connected to the scan line and the data line, and charges the data voltage to the capacitor in response to the scan pulse. The driving thin film transistor is connected to the power supply line and the capacitor, and controls the amount of light supplied to the light emitting element according to the data voltage charged in the capacitor to control the light emitting amount of the light emitting element.

The organic light emitting diode display 100 may include a routing line RL in a pad portion PAD and a routing line RL may be formed in a touch driver (not shown) disposed in the pad portion PAD. Lt; / RTI > The touch driver (not shown) may include a Tx driver (not shown), an Rx driver (not shown), and a touch controller (not shown).

The conventional touch screen panel of the external structure has a structure in which a touch film is interposed between the display panel and the cover glass, and there is a problem that the thickness of the display device to which the touch film is applied is increased. Further, when an additional sensor is required together with the touch sensor, a new sensing film provided with an additional sensor must be interposed between the display panel and the cover glass together with the existing touch film, Can be made thicker. In addition, an additional process may occur due to the addition of a new sensing film, which may result in additional costs.

The organic light emitting diode display device according to the present invention realizes a structure in which a touch screen panel is embedded in a display panel by forming a sensor layer having different types of sensors on the sealing film layer, In the case where the sensing film is applied, the additional sensing film interposed with the touch film can be removed between the display panel and the cover glass. Therefore, compared to the display device to which the conventional external touch screen panel is applied, There are advantages.

The organic light emitting diode display device according to the present invention can be utilized as it is without changing the manufacturing process of the conventional organic light emitting diode display device. Therefore, when a touch film or an additional sensing film is applied, It is possible to eliminate the step of interposing between the glass plates and to form a sensor layer having different kinds of sensors with different sensing methods on the sealing film layer. Unlike the display device, there is an advantage that additional cost due to the introduction of the additional process due to the addition of the new sensing film does not occur.

The organic light emitting diode display device according to the present invention does not require the development of a new sensing film for introducing an additional sensor other than the touch sensor. Therefore, compared with a display device to which a touch screen panel of a conventional external structure is applied, It is possible to reduce the cost of development of the film, and thus it is possible to secure a relatively excellent price competitiveness.

In addition, in a display device to which a touch screen panel of a conventional external structure is applied, a touch sensor is formed on an upper substrate of a display panel, or a touch sensor and an additional sensor are formed, The organic light emitting diode display device according to the present invention is characterized in that different types of sensors and a sensor driver connected thereto are formed on a lower substrate, It is not necessary to connect a process of connecting the electrodes. Accordingly, the organic light emitting diode display device according to the present invention has advantages over a display device using a touch screen panel of an external structure, that is, it can save airflow and thus assure a relatively good price competitiveness.

While the present invention has been described in connection with what is presently considered to be practical exemplary embodiments, it is to be understood that the invention is not limited to the disclosed embodiments, but, on the contrary, It will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention. It is therefore to be understood that the above-described embodiments are illustrative in all aspects and not restrictive.

100: organic light emitting diode display device
SL: Sensor layer
EC: sealing film layer
OLED: Emissive element layer
PC: Circuit board
1S: first sensing unit, 2S: second sensing unit
TX: first electrode, RX: second electrode
BR: Connection pattern
GE: gate electrode
ACT: semiconductor layer
S: source electrode
D: drain electrode
TH: contact hole
PAS: Passivation layer

Claims (6)

A first sensing unit and a second sensing unit having different sensing modes, and the second sensing unit includes a sensor layer disposed at an outer periphery of the first sensing unit;
A circuit substrate layer including a driving circuit;
A sealing film layer disposed between the sensor layer and the circuit substrate layer; And
A light emitting element layer disposed between the sealing film layer and the circuit substrate layer; / RTI >
Organic light emitting diode display. The method according to claim 1,
Wherein the sensor layer comprises:
Organic light emitting diode display. The method according to claim 1,
Wherein the first sensing unit includes a touch sensor,
Wherein the second sensing unit includes a photo sensor,
Organic light emitting diode display. The method of claim 3,
The touch sensor includes:
The first electrodes disposed on the sealing film layer,
Second electrodes disposed on the sealing film layer and intersecting the first electrodes, and
And a connection pattern for electrically connecting any one of the first electrodes and the second electrodes.
Organic light emitting diode display. 5. The method of claim 4,
The photo-
A gate electrode disposed on the sealing film layer and made of the same material as the first electrodes and the second electrodes,
Source and drain electrodes disposed on the gate electrode, and
A semiconductor layer disposed between the gate electrode and the source and drain electrodes, the semiconductor layer being in contact with the source and drain electrodes,
And an organic light emitting diode (OLED) display device. 6. The method of claim 5,
Wherein the source and drain electrodes are formed of the same material as the connection pattern,
Organic light emitting diode display.

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