KR101965102B1 - 성막장치, 성막방법 및 전자 디바이스 제조방법 - Google Patents

성막장치, 성막방법 및 전자 디바이스 제조방법 Download PDF

Info

Publication number
KR101965102B1
KR101965102B1 KR1020180068493A KR20180068493A KR101965102B1 KR 101965102 B1 KR101965102 B1 KR 101965102B1 KR 1020180068493 A KR1020180068493 A KR 1020180068493A KR 20180068493 A KR20180068493 A KR 20180068493A KR 101965102 B1 KR101965102 B1 KR 101965102B1
Authority
KR
South Korea
Prior art keywords
evaporation
crucible
substrate
evaporation sources
film forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020180068493A
Other languages
English (en)
Korean (ko)
Inventor
토시하루 스미야
유키 아이자와
유 후카사와
Original Assignee
캐논 톡키 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 캐논 톡키 가부시키가이샤 filed Critical 캐논 톡키 가부시키가이샤
Priority to KR1020180068493A priority Critical patent/KR101965102B1/ko
Priority to JP2018221606A priority patent/JP7262212B2/ja
Priority to CN201811562201.5A priority patent/CN110607504B/zh
Application granted granted Critical
Publication of KR101965102B1 publication Critical patent/KR101965102B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H01L51/56—
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/042—Coating on selected surface areas, e.g. using masks using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/12—Organic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C23C14/18—Metallic material, boron or silicon on other inorganic substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/243—Crucibles for source material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • C23C14/505—Substrate holders for rotation of the substrates
    • H01L51/001—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/164—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using vacuum deposition

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Inorganic Chemistry (AREA)
  • Electroluminescent Light Sources (AREA)
  • Physical Vapour Deposition (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
KR1020180068493A 2018-06-15 2018-06-15 성막장치, 성막방법 및 전자 디바이스 제조방법 Active KR101965102B1 (ko)

Priority Applications (3)

Application Number Priority Date Filing Date Title
KR1020180068493A KR101965102B1 (ko) 2018-06-15 2018-06-15 성막장치, 성막방법 및 전자 디바이스 제조방법
JP2018221606A JP7262212B2 (ja) 2018-06-15 2018-11-27 成膜装置、成膜方法および電子デバイスを製造する方法
CN201811562201.5A CN110607504B (zh) 2018-06-15 2018-12-20 成膜装置、成膜方法以及电子设备制造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020180068493A KR101965102B1 (ko) 2018-06-15 2018-06-15 성막장치, 성막방법 및 전자 디바이스 제조방법

Publications (1)

Publication Number Publication Date
KR101965102B1 true KR101965102B1 (ko) 2019-04-02

Family

ID=66166997

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020180068493A Active KR101965102B1 (ko) 2018-06-15 2018-06-15 성막장치, 성막방법 및 전자 디바이스 제조방법

Country Status (3)

Country Link
JP (1) JP7262212B2 (https=)
KR (1) KR101965102B1 (https=)
CN (1) CN110607504B (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115110037A (zh) * 2022-06-23 2022-09-27 北海惠科半导体科技有限公司 蒸发镀膜装置的镀膜方法和蒸发镀膜装置

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111676454B (zh) * 2020-08-04 2023-09-05 光驰科技(上海)有限公司 一种节省真空镀膜室内空间的蒸发源配置结构及其设计方法
CN112538605B (zh) * 2020-12-03 2024-05-14 福建华佳彩有限公司 一种蒸镀设备
CN112626462B (zh) * 2020-12-11 2023-05-30 江苏集萃有机光电技术研究所有限公司 一种蒸镀源供料装置及蒸镀源供料方法
JP7755400B2 (ja) 2021-06-30 2025-10-16 キヤノントッキ株式会社 成膜装置及び成膜方法
JP7314210B2 (ja) 2021-06-30 2023-07-25 キヤノントッキ株式会社 成膜装置、成膜方法及び蒸発源ユニット
JP7314209B2 (ja) 2021-06-30 2023-07-25 キヤノントッキ株式会社 成膜装置、成膜方法及び蒸発源ユニット
JP7734023B2 (ja) 2021-09-01 2025-09-04 キヤノントッキ株式会社 成膜装置、成膜方法及び電子デバイスの製造方法
CN114150273A (zh) * 2021-12-06 2022-03-08 深圳市华星光电半导体显示技术有限公司 蒸镀装置及蒸镀方法
JP2024080102A (ja) 2022-12-01 2024-06-13 キヤノントッキ株式会社 蒸発源ユニット、成膜装置及び成膜方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101323029B1 (ko) * 2006-12-26 2013-10-29 엘지디스플레이 주식회사 리볼버를 포함하는 증착 장치
KR101562275B1 (ko) * 2014-05-30 2015-10-22 주식회사 선익시스템 증착장치

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4177021B2 (ja) 2002-04-25 2008-11-05 東北パイオニア株式会社 蒸着装置の制御方法及び蒸着装置
JP2005029895A (ja) * 2003-07-04 2005-02-03 Agfa Gevaert Nv 蒸着装置
KR100671673B1 (ko) 2005-03-09 2007-01-19 삼성에스디아이 주식회사 다중 진공증착장치 및 제어방법
JP4762763B2 (ja) 2006-03-10 2011-08-31 富士フイルム株式会社 真空蒸着装置
KR101104802B1 (ko) * 2009-05-06 2012-01-12 (주)알파플러스 하향식 노즐형 진공 증발원 장치 및 이를 이용한 하향식 노즐형 진공 증착 장치
JP5346268B2 (ja) 2009-10-09 2013-11-20 株式会社アルバック 蒸着装置及び蒸着方法
KR20130045432A (ko) * 2011-10-26 2013-05-06 주식회사 탑 엔지니어링 회전식 증착 장치
CN103305803B (zh) * 2013-05-23 2015-05-20 四川虹视显示技术有限公司 基于温度控制系统的oled有机层蒸镀温度控制方法
CN103526164B (zh) * 2013-10-23 2015-09-09 京东方科技集团股份有限公司 一种蒸镀设备
CN107002232A (zh) * 2014-11-26 2017-08-01 应用材料公司 用于蒸发目的的坩锅组件
JP2017088976A (ja) * 2015-11-13 2017-05-25 神港精機株式会社 多元系被膜形成装置および多元系被膜形成方法
CN107177821B (zh) * 2017-06-12 2019-04-23 京东方科技集团股份有限公司 坩埚装置
CN107604317B (zh) * 2017-09-21 2019-11-26 武汉华星光电半导体显示技术有限公司 一种蒸镀坩埚以及蒸镀装置
CN107815648B (zh) * 2017-09-26 2019-11-05 上海升翕光电科技有限公司 一种线性蒸发源装置及蒸镀设备

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101323029B1 (ko) * 2006-12-26 2013-10-29 엘지디스플레이 주식회사 리볼버를 포함하는 증착 장치
KR101562275B1 (ko) * 2014-05-30 2015-10-22 주식회사 선익시스템 증착장치

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115110037A (zh) * 2022-06-23 2022-09-27 北海惠科半导体科技有限公司 蒸发镀膜装置的镀膜方法和蒸发镀膜装置
CN115110037B (zh) * 2022-06-23 2024-01-12 北海惠科半导体科技有限公司 蒸发镀膜装置的镀膜方法和蒸发镀膜装置

Also Published As

Publication number Publication date
JP7262212B2 (ja) 2023-04-21
CN110607504A (zh) 2019-12-24
CN110607504B (zh) 2021-12-07
JP2019218623A (ja) 2019-12-26

Similar Documents

Publication Publication Date Title
KR101965102B1 (ko) 성막장치, 성막방법 및 전자 디바이스 제조방법
CN109722635B (zh) 蒸发源装置、成膜装置、成膜方法以及电子设备的制造方法
US8536057B2 (en) Thin film deposition apparatus and method of manufacturing organic light emitting device by using the same
US9748526B2 (en) Vapor deposition device, vapor deposition method, and method for producing organic el display device
JP5269256B2 (ja) 蒸着方法及び蒸着装置
US10431779B2 (en) Organic layer deposition apparatus, method of manufacturing organic light-emitting display apparatus using the same, and organic light-emitting display apparatus manufactured using the method
US9012258B2 (en) Method of manufacturing an organic light-emitting display apparatus using at least two deposition units
US20150217319A1 (en) Organic Layer Deposition Apparatus, Frame Sheet Assembly For The Organic Layer Deposition Apparatus, And Method Of Manufacturing Organic Light Emitting Display Device Using The Frame Sheet Assembly
US20170081755A1 (en) Evaporation source for organic material
US20170092899A1 (en) Evaporation source for organic material
KR101632298B1 (ko) 평판 표시장치 및 그 제조방법
KR102527121B1 (ko) 성막 장치, 유기 디바이스의 제조 장치, 및 유기 디바이스의 제조 방법
KR102128888B1 (ko) 성막 장치, 성막 방법, 및 전자 디바이스 제조방법
JP7090686B2 (ja) 成膜装置及び電子デバイスの製造方法
JP2015214740A (ja) 蒸着装置用マスク、蒸着装置、蒸着方法、及び、有機エレクトロルミネッセンス素子の製造方法
KR20190036232A (ko) 성막장치, 성막방법, 및 전자 디바이스 제조방법
WO2024004501A1 (ja) 成膜装置、成膜方法、及び電子デバイスの製造方法
KR100813199B1 (ko) 개구부의 각도가 상이한 증착원 및 이를 이용하는 박막증착 장치
WO2024185728A1 (ja) 成膜装置、成膜方法及び製造方法
WO2025248276A1 (en) Evaporation source, nozzle set, and method of assembling an evaporation source
WO2024004502A1 (ja) 電子デバイスの製造方法、及び成膜方法
WO2025088369A1 (en) Evaporation source arrangement, vacuum deposition system, and method of coating a substrate
JP2009064740A (ja) 蒸着方法及び蒸着装置

Legal Events

Date Code Title Description
PA0109 Patent application

St.27 status event code: A-0-1-A10-A12-nap-PA0109

A201 Request for examination
A302 Request for accelerated examination
PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

PA0302 Request for accelerated examination

St.27 status event code: A-1-2-D10-D17-exm-PA0302

St.27 status event code: A-1-2-D10-D16-exm-PA0302

D13-X000 Search requested

St.27 status event code: A-1-2-D10-D13-srh-X000

D14-X000 Search report completed

St.27 status event code: A-1-2-D10-D14-srh-X000

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E90F Notification of reason for final refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U11-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 6

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 7

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 8

U11 Full renewal or maintenance fee paid

Free format text: ST27 STATUS EVENT CODE: A-4-4-U10-U11-OTH-PR1001 (AS PROVIDED BY THE NATIONAL OFFICE)

Year of fee payment: 8