KR101944625B1 - 고주파 모듈 및 탄성파 필터의 제조 방법 - Google Patents

고주파 모듈 및 탄성파 필터의 제조 방법 Download PDF

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KR101944625B1
KR101944625B1 KR1020170098201A KR20170098201A KR101944625B1 KR 101944625 B1 KR101944625 B1 KR 101944625B1 KR 1020170098201 A KR1020170098201 A KR 1020170098201A KR 20170098201 A KR20170098201 A KR 20170098201A KR 101944625 B1 KR101944625 B1 KR 101944625B1
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wave filter
impedance
noise
gain
matching impedance
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KR20180016298A (ko
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지히로 소다
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가부시키가이샤 무라타 세이사쿠쇼
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    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/25Constructional features of resonators using surface acoustic waves
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F1/00Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/56Modifications of input or output impedances, not otherwise provided for
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/46Filters
    • H03H9/64Filters using surface acoustic waves
    • H03H9/6489Compensation of undesirable effects
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/46Filters
    • H03H9/48Coupling means therefor
    • H03H9/52Electric coupling means
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F1/00Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/26Modifications of amplifiers to reduce influence of noise generated by amplifying elements
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/195High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only in integrated circuits
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03GCONTROL OF AMPLIFICATION
    • H03G3/00Gain control in amplifiers or frequency changers
    • H03G3/20Automatic control
    • H03G3/30Automatic control in amplifiers having semiconductor devices
    • H03G3/3036Automatic control in amplifiers having semiconductor devices in high-frequency amplifiers or in frequency-changers
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H11/00Networks using active elements
    • H03H11/02Multiple-port networks
    • H03H11/28Impedance matching networks
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/08Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
    • H03H3/10Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves for obtaining desired frequency or temperature coefficient
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/0004Impedance-matching networks
    • H03H9/0009Impedance-matching networks using surface acoustic wave devices
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02Details
    • H03H9/02535Details of surface acoustic wave devices
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02Details
    • H03H9/125Driving means, e.g. electrodes, coils
    • H03H9/145Driving means, e.g. electrodes, coils for networks using surface acoustic waves
    • H03H9/14538Formation
    • H03H9/14541Multilayer finger or busbar electrode
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/46Filters
    • H03H9/64Filters using surface acoustic waves
    • H03H9/6423Means for obtaining a particular transfer characteristic
    • H03H9/6433Coupled resonator filters
    • H03H9/6436Coupled resonator filters having one acoustic track only
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/46Filters
    • H03H9/64Filters using surface acoustic waves
    • H03H9/6423Means for obtaining a particular transfer characteristic
    • H03H9/6433Coupled resonator filters
    • H03H9/6483Ladder SAW filters
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F2200/00Indexing scheme relating to amplifiers
    • H03F2200/222A circuit being added at the input of an amplifier to adapt the input impedance of the amplifier
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F2200/00Indexing scheme relating to amplifiers
    • H03F2200/294Indexing scheme relating to amplifiers the amplifier being a low noise amplifier [LNA]
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F2200/00Indexing scheme relating to amplifiers
    • H03F2200/451Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier

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  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
  • Input Circuits Of Receivers And Coupling Of Receivers And Audio Equipment (AREA)
KR1020170098201A 2016-08-05 2017-08-02 고주파 모듈 및 탄성파 필터의 제조 방법 Active KR101944625B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2016155024A JP6520857B2 (ja) 2016-08-05 2016-08-05 高周波モジュール及び弾性波フィルタの製造方法
JPJP-P-2016-155024 2016-08-05

Publications (2)

Publication Number Publication Date
KR20180016298A KR20180016298A (ko) 2018-02-14
KR101944625B1 true KR101944625B1 (ko) 2019-01-31

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KR1020170098201A Active KR101944625B1 (ko) 2016-08-05 2017-08-02 고주파 모듈 및 탄성파 필터의 제조 방법

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Country Link
US (1) US10673410B2 (https=)
JP (1) JP6520857B2 (https=)
KR (1) KR101944625B1 (https=)
CN (1) CN107689783B (https=)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10320363B2 (en) * 2016-08-05 2019-06-11 Murata Manufacturing Co., Ltd. High-frequency module
US11870421B2 (en) * 2019-10-23 2024-01-09 Skyworks Solutions, Inc. Surface acoustic wave resonator with suppressed transverse modes using second bus bar
US11626855B2 (en) * 2019-11-08 2023-04-11 Skyworks Solutions, Inc. Out-of-band rejection using SAW-based integrated balun
WO2022024807A1 (ja) 2020-07-31 2022-02-03 株式会社村田製作所 弾性波フィルタおよびマルチプレクサ
US12294351B2 (en) 2021-12-22 2025-05-06 Skyworks Solutions, Inc. Acoustic wave device with mini bus bars
CN115664456B (zh) * 2022-12-08 2023-05-02 荣耀终端有限公司 一种射频传输电路及电子设备

Citations (1)

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Publication number Priority date Publication date Assignee Title
WO2015125638A1 (ja) * 2014-02-19 2015-08-27 株式会社村田製作所 高周波フロントエンド回路

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63153902A (ja) * 1986-09-19 1988-06-27 Nec Corp 低雑音増幅器
JPH077451A (ja) * 1993-06-15 1995-01-10 Hitachi Ltd 受信回路
JP3454239B2 (ja) * 2000-08-31 2003-10-06 株式会社村田製作所 弾性表面波フィルタ
WO2002037709A1 (en) * 2000-11-01 2002-05-10 Hitachi Metals, Ltd. High-frequency switch module
JP3973915B2 (ja) * 2001-03-30 2007-09-12 株式会社日立メディアエレクトロニクス 高周波フィルタ、高周波回路、アンテナ共用器及び無線端末
EP1345323B1 (en) * 2002-03-15 2005-02-09 Matsushita Electric Industrial Co., Ltd. Balanced high-frequency device and balance-characteristics improving method and balanced high-frequency circuit using the same
CN100536328C (zh) * 2002-10-25 2009-09-02 日立金属株式会社 平衡-不平衡型多频带滤波模块
EP1854211A1 (en) * 2005-02-28 2007-11-14 Matsushita Electric Industrial Co., Ltd. Piezoelectric filter, and duplexer and communications apparatus using the same
CN101128977A (zh) * 2005-02-28 2008-02-20 松下电器产业株式会社 压电滤波器以及使用该压电滤波器的双工器和通信装置
JP2006333390A (ja) * 2005-05-30 2006-12-07 Furukawa Electric Co Ltd:The 低雑音増幅回路
WO2008075551A1 (ja) 2006-12-21 2008-06-26 Murata Manufacturing Co., Ltd. 高周波スイッチ回路
JP2009060511A (ja) 2007-09-03 2009-03-19 Murata Mfg Co Ltd 通信装置
JP4816710B2 (ja) * 2008-10-30 2011-11-16 株式会社村田製作所 分波器
JP5001980B2 (ja) * 2009-06-18 2012-08-15 サイトウ共聴特殊機器株式会社 地上波デジタルテレビ用アンテナブースタユニット
WO2012114593A1 (ja) * 2011-02-24 2012-08-30 株式会社村田製作所 弾性波分波器
JP6017868B2 (ja) * 2011-11-04 2016-11-02 太陽誘電株式会社 分波器、フィルタ及び通信モジュール
US20140015614A1 (en) * 2012-07-10 2014-01-16 Infineon Technologies Ag System and Method for a Low Noise Amplifier
CN103001687B (zh) * 2012-12-21 2015-08-26 北京工业大学 一种用于接收gsm-r信号的接收装置
JP5765501B1 (ja) 2013-09-17 2015-08-19 株式会社村田製作所 デュプレクサ
US9455755B2 (en) 2014-10-06 2016-09-27 Skyworks Solutions, Inc. Aggregate signal amplification device and method

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015125638A1 (ja) * 2014-02-19 2015-08-27 株式会社村田製作所 高周波フロントエンド回路

Also Published As

Publication number Publication date
CN107689783A (zh) 2018-02-13
JP2018023074A (ja) 2018-02-08
JP6520857B2 (ja) 2019-05-29
US10673410B2 (en) 2020-06-02
CN107689783B (zh) 2020-12-15
US20180041192A1 (en) 2018-02-08
KR20180016298A (ko) 2018-02-14

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