KR101937825B1 - Converting Structure of Wavelength, Light Emitting Diode Package And Lighting device - Google Patents

Abstract

According to one embodiment of the present application, a support comprising a hollow formed through the wavelength conversion structure, the inner surface of the support being defined by the hollow; And a wavelength conversion layer formed on at least the inner surface of the support and converting and outputting the wavelength of the incident light, wherein light emitted from the lens of the light emitting element is incident on the wavelength conversion layer, The first light may be converted into third light having a wavelength distribution different from that of the first light through the wavelength conversion layer and output, and the wavelength conversion structure may be provided.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a wavelength conversion structure, a light emitting diode package,

An embodiment relates to a wavelength conversion structure disposed on a light emitting element.

An embodiment relates to a light emitting diode package.

An embodiment relates to a lighting device.

BACKGROUND ART Light emitting diodes using compound semiconductors, particularly gallium nitride compound semiconductors, have a long life span, low power consumption, and are eco-friendly, thus being applied to various fields. Further, as the efficiency of light emitting diodes has recently increased, the application fields thereof have been broadened for backlight light sources, automobile head lamps and general illumination.

Generally, light emitting diodes are fabricated in chip form. Meanwhile, in order to supply power to the light emitting diode chip and protect the light emitting diode chip, the light emitting diode chip is mounted on a lead frame, a printed circuit board or the like to manufacture a light emitting diode package.

In a method of realizing white light using the light emitting diode chip, there are a method of applying a phosphor to a blue light emitting diode to realize white light at a package level, and a method of emitting red light, blue light and green light, There is a three-color light-emitting diode method which realizes white light.

The tricolor light emitting diode method has a relatively high manufacturing cost and has a problem in that uniform color mixture, that is, white light close to natural light, can not be realized due to different optical characteristics among the light emitting diodes.

Embodiments provide a wavelength conversion structure disposed on an existing light emitting device to improve CRI.

The embodiments provide a light emitting diode package with improved thermal stability.

The embodiment provides an illumination device for outputting light with reduced color deviation.

According to one embodiment of the present application, a support comprising a hollow formed through the wavelength conversion structure, the inner surface of the support being defined by the hollow; And a wavelength conversion layer formed on at least the inner surface of the support and converting and outputting the wavelength of the incident light, wherein light emitted from the lens of the light emitting element is incident on the wavelength conversion layer, The first light may be converted into third light having a wavelength distribution different from that of the first light through the wavelength conversion layer and output, and the wavelength conversion structure may be provided.

According to an embodiment of the present invention, there is provided a light emitting diode chip for emitting light; A lens formed on the light emitting diode chip to emit light emitted from the light emitting diode chip to the outside; A molding part including a phosphor; And a wavelength conversion layer which changes the wavelength distribution of light incident from the lens and outputs the light, wherein the wavelength conversion layer is formed so as to surround the lens, and the extended surface of the light emitting surface of the light emitting diode chip and the surface of the wavelength conversion layer The extending surface of the light incidence surface may be provided with a light emitting diode package which meets at a certain line.

The wavelength conversion structure according to the embodiment may be disposed on the path of light emitted from the light emitting device, thereby changing the wavelength distribution of the light to emit light with an increased CRI.

The light emitting diode package according to the embodiment can prevent the heat transfer from the light emitting diode chip by arranging the molding part and the wavelength conversion layer apart from each other, thereby improving the thermal stability.

The effects of the present application are not limited to the effects described above, and effects not mentioned may be clearly understood by those skilled in the art from the present specification and the accompanying drawings.

1 is a view for explaining a wavelength conversion structure according to a first embodiment of the present application.
2 is a view for explaining a wavelength conversion structure according to the first embodiment of the present application.
3 is a view for explaining the optical path of the wavelength conversion structure according to one embodiment of the present application.
4 is a view for explaining the coupling of the wavelength conversion structure to the light emitting device according to one embodiment of the present application.
5 is a view for explaining the coupling of the wavelength conversion structure to the light emitting device according to one embodiment of the present application.
6 is a view for explaining the coupling of the wavelength conversion structure to the plate according to one embodiment of the present application.
7 is a view for explaining a shape of a wavelength conversion structure in which an incident region of light is considered according to an embodiment of the present application.
8 is a view for explaining a shape of a wavelength conversion structure in which an incident region of light is considered according to an embodiment of the present application.
9 is a view for explaining the distribution of the wavelength conversion layer 10 according to one embodiment of the present application.
10 is a view for explaining the wavelength conversion structure according to the second embodiment of the present application.
11 is a view for explaining the distribution of the wavelength conversion material of the wavelength conversion structure according to the embodiment of the present application.
12 is a view for explaining the wavelength conversion structure according to the third embodiment of the present application.
13 is a view for explaining the wavelength conversion structure according to the third embodiment of the present application.
14 is a view for explaining a coupling corresponding to a plurality of light emitting elements of a wavelength conversion structure according to an embodiment of the present application.
FIG. 15 is a diagram for explaining a layout change of a wavelength conversion structure according to an embodiment of the present application. FIG.
16 is a diagram for explaining a layout change of the wavelength conversion structure according to an embodiment of the present application.
17 is a view for explaining a wavelength conversion structure according to an embodiment of the present application.
18 is a view for explaining the arrangement of the wavelength conversion structure according to an embodiment of the present application.
19 is a view for explaining the arrangement of the wavelength conversion structure according to an embodiment of the present application.
20 is a view for explaining the arrangement of the wavelength conversion structure according to an embodiment of the present application.
21 is a view for explaining a wavelength conversion structure having a diffuser plate 40 according to an embodiment of the present application.
22 is a view for explaining a light emitting diode package 400 according to an embodiment of the present application.
23 is a view showing a light transmission path of the light emitting diode package 400 according to an embodiment of the present application.
24 is a view for explaining a light emitting diode package 400 according to an embodiment of the present application.
25 is a perspective view showing a lighting apparatus including a wavelength conversion structure according to an embodiment of the present application.

The foregoing objects, features and advantages of the present application will become more apparent from the following detailed description taken in conjunction with the accompanying drawings. It should be understood, however, that the present invention may be embodied with various changes and modifications, which will be apparent to those skilled in the art.

In the drawings, the thicknesses of the layers and regions are exaggerated for clarity and the element or layer is referred to as being "on" or "on" Included in the scope of the present invention is not only directly above another element or layer but also includes intervening layers or other elements in between. Like reference numerals designate like elements throughout the specification. The same reference numerals are used to designate the same components in the same reference numerals in the drawings of the embodiments.

A detailed description of known functions and configurations incorporated herein will be omitted when it may make the subject matter of the present application rather unclear. In addition, numerals (e.g., first, second, etc.) used in the description of the present invention are merely an identifier for distinguishing one component from another.

In addition, the suffix "module" and " part "for constituent elements used in the following description are given or mixed in consideration of ease of specification, and do not have their own meaning or role.

According to one embodiment of the present application, a support comprising a hollow formed through the wavelength conversion structure, the inner surface of the support being defined by the hollow; And a wavelength conversion layer formed on at least the inner surface of the support and converting and outputting the wavelength of the incident light, wherein light emitted from the lens of the light emitting element is incident on the wavelength conversion layer, The first light may be converted into third light having a wavelength distribution different from that of the first light through the wavelength conversion layer and output, and the wavelength conversion structure may be provided.

The wavelength conversion layer may be formed on all inner surfaces defined by the hollow.

The shape of the hollow section may correspond to the shape of the cross section of the lens.

The wavelength conversion layer may include a plurality of phosphors.

The wavelength conversion layer may include a plurality of quantum dots.

The lower portion of the wavelength conversion layer and the lower portion of the support may have different distances from the plate on which the light emitting device is mounted.

The wavelength conversion structure changes the wavelength distribution of the light emitted from the lens so that the CRI of light emitted from the lens can be increased.

The support and the wavelength conversion layer may be integrally formed.

The wavelength conversion structure may be formed by incorporating the wavelength conversion material constituting the wavelength conversion layer into the support.

And a diffusion plate positioned at an upper end of the wavelength conversion layer and diffusing light output from the wavelength conversion layer.

The diffusion plate may be combined with the support.

An outer frame formed so that the wavelength conversion structure is detachable may be provided.

A wavelength conversion structure; A light emitting element including a light emitting diode chip; And a body in which the wavelength conversion structure is accommodated, may be provided.

According to an embodiment of the present invention, the wavelength conversion structure including at least one hollow may include: a support defining an outer shape of the wavelength conversion structure; And a wavelength conversion layer for converting the wavelength of the incident light and outputting the wavelength to the outside, wherein the hollow formed in the wavelength conversion structure is positioned so as to correspond to the light emitting element, And the wavelength conversion layer is formed on the inner surface of the support defined by the hollow.

According to an embodiment of the present invention, there is provided a light emitting diode chip for emitting light; A lens formed on the light emitting diode chip to emit light emitted from the light emitting diode chip to the outside; A molding part including a phosphor; And a wavelength conversion layer which changes the wavelength distribution of light incident from the lens and outputs the light, wherein the wavelength conversion layer is formed so as to surround the lens, and the extended surface of the light emitting surface of the light emitting diode chip and the surface of the wavelength conversion layer The extending surface of the light incidence surface may be provided with a light emitting diode package which meets at a certain line.

The extending surface of the light emitting surface of the light emitting diode chip and the extending surface of the light incident surface of the wavelength conversion layer may be perpendicular to each other.

The wavelength conversion layer may include a plurality of quantum dots.

And an auxiliary layer disposed between the wavelength conversion layer and the lens.

According to an embodiment of the present invention, And a printed circuit board electrically connected to the light source, wherein the light source includes: a light emitting diode chip that emits light; a lens that is formed on the light emitting diode chip and emits light emitted from the light emitting diode chip to the outside; And a wavelength conversion layer that changes the wavelength distribution of the light incident from the lens and emits the light, wherein the wavelength conversion layer is formed to surround the lens, and the extension of the light emitting surface of the light emitting diode chip And the extending surface of the light-converging surface of the wavelength converting layer meet at any one of the lines.

The extending surface of the light emitting surface of the light emitting diode chip and the extending surface of the light incident surface of the wavelength conversion layer may be perpendicular to each other.

The wavelength conversion layer may include a plurality of quantum dots.

And an auxiliary layer disposed between the wavelength conversion layer and the lens.

And a diffusion plate positioned on the wavelength conversion layer and diffusing light output from the wavelength conversion layer.

≪ Wavelength conversion structure &

Hereinafter, the wavelength conversion structure according to the present application will be described. The wavelength conversion structure according to the present application performs a function of changing a wavelength distribution of light emitted from a light emitting device including a light emitting diode (hereinafter, referred to as a light emitting device) to emit light of a desired color temperature.

Therefore, before describing the wavelength conversion structure disclosed by the present application, an example of the light emitting element will be described first.

The light emitting device may include a light emitting diode chip and a lens. More specifically, the light emitting diode chip may perform a function of outputting light. The lens may be located on the light emitting diode chip. The lens may be configured to surround the light emitting diode chip to protect the light emitting diode chip.

In addition, a phosphor may be further distributed between the lens and the LED chip. Therefore, the light emitted from the light emitting diode chip may be incident on the phosphor inside the lens, and may be emitted as light having a different wavelength band.

The light emitted from the light emitting diode chip can be emitted through the lens. Therefore, the light emitted from the light emitting device to be described below includes light emitted from the LED chip and emitted through the lens. In other words, the light emitted from the light emitting device includes light emitted from the light emitting diode chip, reflected or converted and emitted through the lens, and / or light emitted from the light emitting diode chip and directly emitted to the lens .

Hereinafter, the wavelength conversion structure according to the present application disposed on the optical path of the light emitted from the light emitting element will be described by disclosing some embodiments.

1. First Embodiment

1 is a view for explaining a wavelength conversion structure according to a first embodiment of the present application.

As shown in FIG. 1, the wavelength conversion structure according to an embodiment of the present application may include a wavelength conversion layer 10 and a support 20.

The support 20 may function to define the shape of the wavelength conversion structure.

The wavelength conversion layer 10 may function to change the wavelength of the incident light.

Hereinafter, the wavelength conversion layer 10 corresponding to the core configuration of the wavelength conversion structure according to the present application will be described first, and then the wavelength conversion structure according to the first embodiment of the present application will be described in more detail.

1.1 wavelength conversion layer (10)

As described above, the wavelength conversion structure may include the wavelength conversion layer 10.

The wavelength conversion layer 10 may function to change the wavelength distribution of the incident light to output light having a different wavelength distribution.

The wavelength conversion layer 10 may change the wavelength distribution of the light incident on the wavelength conversion layer 10 by performing a function of outputting light corresponding to a specific wavelength region of the incident light.

Alternatively, the wavelength conversion layer 10 may change the wavelength distribution of the light incident on the wavelength conversion layer 10 by including a material that changes the wavelength of the incident light and emits light.

Particularly, a part of the light incident on the wavelength conversion layer 10 can be excited and output. The material may be irradiated with incident light and generate excitation light having a wavelength different from that of the incident light and output the generated excitation light.

For example, the wavelength conversion layer 10 may include a plurality of quantum dots (QDs). That is, the material may be a quantum dot.

The quantum dot is a nano-sized semiconductor material and exhibits a quantum confinement effect. When the quantum dots absorb the light from the excitation source and reach the energy-excited state, they emit energy corresponding to the energy band gap of the corresponding quantum dot. Accordingly, when the size or material composition of the quantum dots is controlled, the corresponding energy band gap can be controlled, and various light can be emitted to be used as an emitter of an electronic device.

The nano-sized semiconductor material may be selected from Group II-VI compounds, Group III-V compounds, Group IV-VI compounds, Group IV compounds, or mixtures thereof.

CdSeS, CdSeS, CdSeS, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, HgSe, HgTe, ZnTe, ZnSe, ZnTe, ZnO, A trivalent compound such as CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, or a ternary compound such as HggZnTe, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, HgZnSTe have.

The group III-V compound may be one of GaN, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, GaN, GaN, GaN, GaN, GaN, AlN, AlN, AlN, InAlPb, InAlPb, InAlPb, InAlPb, InAlPb, InAlPb, InAlPb, InAlPb, InAlPb, InAlPb, InAlPb, InAlPb, InAlPb, InAlPb, , And the like.

The IV-VI compound may be at least one selected from the group consisting of ternary compounds such as SnSeS, SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe and SnPbTe, SnPbSSe, SnPbSeTe , SnPbSTe, and the like.

The Group IV compound may be selected from the group consisting of single element compounds such as Si and Ge, or these element compounds such as SiC and SiGe.

In the case of the elemental compound, the trivalent compound, or the silane compound, the crystal structure thereof may be partially contained and exist in the same particle or in the form of an alloy.

In another example, the wavelength conversion layer 10 may include a plurality of phosphors. That is, the material may be a phosphor. The phosphor may include an inorganic phosphor, an organic phosphor or a dye.

The fluorescent material may include an inorganic fluorescent material and / or an organic fluorescent material. The phosphor may include YAG: Ce, YBO3: Ce3 +, Tb3 +; BaMgAl10O17: Eu2 +, Mn2 +; (Sr, Ca, Ba) (Al, Ga) 2S4: Eu2 +; ZnS: Cu, Al; Ca8Mg (SiO4) 4Cl2: Eu2 +, Mn2 +; Ba2SiO4: Eu < 2 + >; (Ba, Sr) 2SiO4: Eu < 2 + >; Ba2 (Mg, Zn) Si2O7: Eu2 +; (Ba, Sr) Al 2 O 4: Eu 2+; Sr2Si3O8.2SrCl2: Eu2 +; (Sr, Mg, Ca) 10 (PO4) 6Cl2: Eu2 +; BaMgAl10O17: Eu < 2 + >; BaMg2Al16O27: Eu < 2 + >; Sr, Ca, Ba, Mg) P2O7: Eu < 2 + >, Mn < 2 + >; (CaLa2S4: Ce3 +, SrY2S4: Eu2 +, (Ca, Sr) S: Eu2 +, SrS: Eu2 +, Y2O3: Eu3 +, Bi3 +, YVO4: Eu3 +, Bi3 +, Y2O2S: Eu3 +, Bi3 +, Y2O2S: Eu3 + Any one of the phosphors may be used.

Hereinafter, for convenience of explanation, it is assumed that the wavelength conversion layer 10 includes the phosphor or the quantum dot (QD).

1.2 Wavelength conversion structure

The wavelength conversion structure according to one embodiment of the present application may further include the support 20.

The support 20 may function to define the external shape of the wavelength conversion structure. That is, the shape of the wavelength conversion structure may be defined according to the shape of the support 20. For example, the support 20 may be implemented as a column. However, the shape of the support 20 is not particularly limited.

The support 20 may perform a function of transmitting light. In other words, the light incident on the support 20 can be emitted without changing the wavelength distribution. However, when light is incident on the support 20 and is again emitted to the outside of the support 20, light is incident on the wavelength conversion layer 10 and is emitted again to the outside of the wavelength conversion layer 10 It is considered that there is no change in the wavelength distribution of the light.

The support 20 according to one embodiment of the present application may be formed in a shape having a hollow. That is, in order to reduce the light loss that may occur in the process that light incident on the support 20 is emitted from the support 20 again, the support 20 may include a hollow in a part of the area. If the loss of light incident on the wavelength conversion structure by the hollow is reduced, the light efficiency is improved, and as a result, the power consumption can be reduced.

The support 20 may be disposed at an angle to the upper surface of the plate. The support 20 may be disposed in a direction perpendicular to the upper surface of the plate. The hollow of the support 20 may extend in the vertical direction of the upper surface of the plate. The support 20 may have an inner surface defined by a hollow. The hollow extends from an upper surface of the plate in an extending axial direction, and the hollow extending axis is perpendicular to an upper surface of the plate.

The inner surface of the support 20 may be perpendicular to the upper surface of the plate. The wavelength conversion layer 10 may be positioned on the inner surface of the support 20. Accordingly, the wavelength conversion layer 10 may be perpendicular to the upper surface of the plate.

Also, though not essential, the shape of the space defined by the hollow can be realized to correspond to the shape of the light emitting element. That is, when the shape of the cross section of the light emitting device is a rectangular shape, as shown in FIG. 1 (a), the space may be a square pillar shape. Further, as shown in FIG. 2, when the cross section of the light emitting device is a circular shape, the space may be a circular column shape.

The wavelength conversion structure may be disposed on an optical path of the light emitting device. In particular, the wavelength conversion structure may be positioned on the light emitting device. At this time, the light emitting device can be partially inserted into the hollow of the wavelength conversion structure.

When the wavelength conversion structure is disposed on the upper side of the light emitting device, the wavelength conversion layer 10 may be positioned between the support 20 and the light emitting device. In particular, the wavelength conversion layer 10 may be formed on the inner surface of the support 20. For example, the wavelength conversion layer 10 may be formed on one surface of the wavelength conversion structure to surround the hollow defined space.

When the wavelength conversion structure is disposed on the light path of the light emitting device, light emitted from the light emitting device is output to the outside of the wavelength conversion structure by the phosphor and / or the quantum dot, and the color rendering index And can be outputted as light. In addition, the phosphor and / or the quantum dot can obtain a light having a desired color temperature (CCT). To explain this, a specific optical path of the light emitted from the light emitting element will be described with reference to FIG.

3 is a view for explaining the optical path of the wavelength conversion structure according to one embodiment of the present application.

Referring to FIG. 3, the path of light incident on the wavelength conversion structure will be described.

The light emitted from the light emitting device may be emitted in the hollow direction of the wavelength conversion structure. That is, a part of the light emitted from the light emitting device can be emitted in the hollow direction without transmitting the wavelength conversion layer 10. Therefore, light having the same wavelength distribution as the light emitted from the light emitting element can be emitted through the hollow.

The light emitted from the light emitting device may be emitted in the direction of the wavelength conversion layer 10 of the wavelength conversion structure. That is, a part of the light emitted from the light emitting device can be transmitted through the wavelength conversion layer 10 and emitted. A part of the light incident on the wavelength conversion layer 10 may be excited from the quantum dot or the phosphor contained in the wavelength conversion layer 10 and emitted. A part of the light incident in the direction of the wavelength conversion layer 10 may be converted and emitted by the quantum dot or the phosphor. The wavelength-converted light may be emitted from the wavelength conversion layer 10 or the support 20.

The light emitted from the wavelength conversion structure may include light transmitted through the wavelength conversion layer 10 and light transmitted through the hollow. Therefore, the light incident on the wavelength conversion structure can be changed to a wavelength distribution and output to the wavelength conversion structure.

The light emitted from the wavelength conversion structure is transmitted through the wavelength conversion layer 10, the light passing through the hollow, and the light reflected from the wavelength conversion layer 10, Or light that is emitted to the outside of the wavelength conversion structure through the hollow.

The CRI represents the degree of change of the color of the object when the natural light (similar to black body radiation) having the same color temperature and the artificially produced illumination are irradiated to the same object, and the natural light, that is, the black body radiation, Indicating how close the illumination is to this. As the CRI approaches 100, the light emitting device implements white light close to natural light.

The CRI of the light output from the illuminator by the phosphor and the quantum dot is increased, so that white light close to the natural light can be output. It is possible to output a high CRI light with a simple structure such as the wavelength conversion layer 10 so that manufacturing cost can be reduced as compared with a high CRI light according to the package structure, , The production yield can be improved.

Further, the color temperature can be controlled by controlling the density and type of the phosphors and quantum dots, and light having a desired color temperature can be obtained with a simple method.

Further, there is an effect that the color deviation of the light outputted by the wavelength conversion layer 10 can be reduced.

1.3 Positioning the Wavelength Conversion Structure

The wavelength conversion structure according to an embodiment of the present application is positioned on the light path of the light emitting device, and the wavelength conversion structure may be in contact with the light emitting device and / or the plate. Alternatively, the wavelength conversion structure may be positioned on the light emitting element using a support.

Hereinafter, a method of positioning the wavelength conversion structure according to various methods will be described in more detail.

1) When bonded to a light emitting element

4 and 5 are views for explaining the coupling of the wavelength conversion structure to the light emitting device according to one embodiment of the present application.

The wavelength conversion structure according to one embodiment of the present application may be disposed corresponding to the light emitting element. In particular, the wavelength conversion structure may be disposed corresponding to the size of the light emitting device. That is, the size of the cross section of the light emitting device and the size of the cross section of the hollow defined space of the wavelength conversion structure correspond to each other. For example, referring to FIG. 4 (a), the side of the light emitting device and the wavelength conversion structure may be fitted to be in contact with each other.

The wavelength conversion structure according to an embodiment of the present application may be modified in the shape of the lower part of the wavelength conversion structure so as to couple with the light emitting device more stably. That is, the shape of the lower portion of the wavelength conversion structure may be modified such that a portion of the upper portion of the light emitting device is in contact with the wavelength conversion structure formed on the hollow side of the wavelength conversion structure. For example, referring to FIG. 4 (b), when the upper portion of the light emitting device has a hemispherical shape, the lower portion of the wavelength conversion structure may be recessed to correspond to a part of the hemisphere. Therefore, the side surface of the light emitting device and a part of the upper portion of the light emitting device can be fitted into contact with the wavelength conversion layer 10 formed on the hollow side of the wavelength conversion structure.

In addition, the wavelength conversion structure according to an embodiment of the present application may be formed to be in contact with the entire side surface of the light emitting device. Alternatively, the wavelength conversion structure may be formed so as to be in contact with a part of the side surface of the light emitting device and not in direct contact with the remaining part. For example, referring to FIG. 5 (a), when viewed from the upper side (that is, the direction opposite to the plate on which the light emitting device is mounted), the wavelength conversion structure has an inner surface of the wavelength conversion structure One surface of the wavelength conversion structure facing the device) can be in contact with the light emitting device. A region shown by a relatively thick line indicates a contact region of the light emitting element and the wavelength conversion structure. 5 (b), when viewed from the upper side of the wavelength conversion structure, the inner surface of the wavelength conversion structure may be in contact with only a part of the light emitting device.

2) When the light emitting device is coupled to the plate provided with the light emitting device

6 is a view for explaining the coupling of the wavelength conversion structure to the plate according to one embodiment of the present application.

The wavelength conversion structure according to an embodiment of the present application may be coupled to a plate on which the light emitting device is mounted. In other words, a structure (hereinafter referred to as a structure) for coupling the wavelength conversion structure may be formed on a plate on which the light emitting device is installed. For example, a groove corresponding to the shape of the lower portion of the wavelength conversion structure may be formed.

The wavelength conversion structure may be fitted into the formed structure. In other words, by coupling the plate and the lower part of the wavelength conversion structure, the wavelength conversion structure can be disposed on the path of the light emitted from the light emitting element.

The wavelength conversion structure and the light emitting device may not contact each other. In other words, the wavelength conversion structure may be coupled to the structure of the plate so that direct contact with the light emitting element is not necessary. Therefore, the light emitting device and the wavelength conversion layer 10 may be spaced apart from each other. Accordingly, heat transfer from the light emitting device to the wavelength conversion structure can be prevented, and thermal stability can be improved.

The lower part of the wavelength conversion structure (i.e., the side coupled to the plate) may have a columnar shape with a hollow, and may have a shape surrounding the hollow like the upper part of the wavelength conversion structure. However, if necessary, one side of at least one of the lower portions of the wavelength conversion structure may have an opening. For example, as shown in FIG. 6 (c), if the wavelength conversion structure has a rectangular pillar shape, openings may be formed on the lower sides of both sides of the rectangular pillar formed opposite to each other.

1.4 Structural features of wavelength conversion structure

FIGS. 7 and 8 are views for explaining a shape of a wavelength conversion structure in which an incident region of light is considered according to an embodiment of the present application. FIG.

The wavelength conversion structure according to an embodiment of the present invention may have different heights and / or widths in consideration of the optical path of the corresponding light emitting device.

The height and / or width of the support 20 and / or the wavelength conversion layer 10 may be varied in height and / or width of the wavelength conversion structure. However, the wavelength conversion layer 10 performs a more important function in emitting desired light through the wavelength conversion structure according to the present application. Therefore, the shape of the wavelength conversion layer 10 that can be considered according to the incident region will be described below. It is needless to say that, in implementing the structure of the wavelength conversion layer 10, the shape of the support 20 may be variously formed as needed.

A region where light is incident by the light emitting device can be defined. In other words, the light emitting diode chip has a certain directivity angle and can output light. For example, the light output from the light emitting diode chip may have a steering angle of 120 degrees. That is, the light output from the light emitting diode chip can be changed in the direction of the light by the lens 60 positioned on the LED chip, and the light incident on the light emitting diode chip Can be defined.

When the incident region is defined, the wavelength conversion layer 10 reflects the height (i.e., the longitudinal direction of the columnar hollow formed in the wavelength conversion structure) and / or the width (that is, The horizontal direction of the columnar hollow of the wavelength conversion structure) can be determined.

Referring to FIG. 7, when the height of the upper side of the wavelength conversion layer 10 is increased, the wavelength of the converted light may be increased. By adjusting the length of the bottom of the wavelength conversion layer 10, the wavelength conversion layer 10 unnecessarily formed in a region where no light is incident can be reduced. That is, the lower part of the wavelength conversion layer and the lower part of the support may have different distances from the plate on which the light emitting device is installed. The lower portion of the wavelength conversion layer may be positioned further from the plate than the lower portion of the support.

Referring to FIG. 8, when the width of the wavelength conversion layer 10 is increased (that is, when the width of the hollow is decreased), the wavelength converted and output light may increase.

Accordingly, when the wavelength of the wavelength conversion layer 10 is changed to increase the light output, it is possible to reduce the height of the wavelength conversion layer 10. That is, the light converted and outputted by the wavelength conversion layer 10 may be proportional to the volume of the wavelength conversion layer 10. In other words, when the width of the wavelength conversion layer 10 is increased, the wavelength conversion layer 10 can be formed to have a reduced height. The wavelength of the light output from the wavelength conversion layer 10 may be determined by the volume of the wavelength conversion layer 10.

For example, the length of the wavelength conversion layer 10 (the direction parallel to the plate on which the light emitting device is provided) may be longer than the longitudinal length of the wavelength conversion layer 10.

In order to maximize the wavelength change of the incident light, the wavelength conversion structure may be formed in a hollow-embedded form as shown in FIG. 8 (C). In other words, the wavelength conversion structure in which the hollow is buried can maximize the region where the incident region overlaps with the wavelength conversion layer 10, so that the wavelength distribution can be more clearly changed.

In addition, if necessary, the support 20 may be formed on the wavelength conversion layer 10. Thus, the wavelength conversion layer 10 can be realized more stably.

9 is a view for explaining the distribution of the wavelength conversion layer 10 according to one embodiment of the present application.

The wavelength conversion layer 10 according to one embodiment of the present application may be formed on a part of the inner surface of the wavelength conversion structure. That is, the wavelength conversion layer 10 may be formed on at least a part of the inner surface of the wavelength conversion structure, not in the form of a column having a hollow. The wavelength conversion layer 10 may be applied to at least one region of the inner surface of the wavelength conversion structure. Alternatively, an area formed to include the wavelength conversion material may be formed on the inner surface of the wavelength conversion structure. '

As shown in FIG. 9, the wavelength conversion layer 10 according to an embodiment of the present application has a structure in which the wavelength conversion layer 10 is formed on all the inner surfaces of the wavelength conversion structure But may be formed on any two surfaces without being formed.

In the above, the wavelength conversion structure according to the first embodiment of the present application has been described. The wavelength conversion structure according to the second embodiment described below is the same as the wavelength conversion structure according to the first embodiment except that it does not include the support 20. Therefore, in describing the second embodiment, the same reference numerals are assigned to the same components as those of the first embodiment, and a detailed description thereof is omitted.

2. Second Embodiment

The wavelength conversion structure according to one embodiment of the present application may be composed of the wavelength conversion layer 30. In other words, the wavelength conversion structure according to the present embodiment can be formed by integrating the support 20 and the wavelength conversion layer 10 in comparison with the first embodiment described above. For example, the wavelength conversion structure may be formed by incorporating the wavelength conversion material constituting the wavelength conversion layer 10 into the support 20. Therefore, a wavelength conversion structure composed only of the wavelength conversion layer 30 according to the second embodiment of the present application can be provided.

The wavelength conversion layer 30 may perform both functions of the support 20 and the wavelength conversion layer 10. Alternatively, the wavelength conversion layer 30 may be configured in the same manner as the wavelength conversion layer 10.

The wavelength conversion layer 30 according to the present application may have a greater stiffness than the wavelength conversion layer 10 according to the embodiment described above. Therefore, the wavelength conversion layer 30 can define the outline of the wavelength conversion structure. In addition, the wavelength conversion layer 30 may be coupled to the light emitting device. Or may be coupled to a plate provided with the light emitting device.

The wavelength conversion structure according to the second embodiment of the present application can also change the wavelength distribution of the light emitted from the wavelength conversion structure by converting and emitting the wavelength of the light incident on the wavelength conversion structure. Ultimately, by arranging the wavelength conversion structure on the light emitting device, light closer to white light can be emitted through the wavelength conversion structure.

10 is a view for explaining the wavelength conversion structure according to the second embodiment of the present application.

The wavelength conversion layer 30 according to the present application (i.e., the wavelength conversion structure according to the second embodiment) may include a wavelength conversion material (for example, a quantum dot or a fluorescent material). In this case, the wavelength conversion material may be substantially uniformly distributed in the wavelength conversion layer 30. In addition, the wavelength conversion material may be distributed in the wavelength conversion layer 30 so as not to be uniform in density depending on the region.

In this regard, it is also possible to configure the wavelength conversion material of the wavelength conversion structure to have a different distribution in order to adjust the wavelength of the light emitted from the wavelength conversion structure. In other words, it is also possible to change the height and / or width of the wavelength conversion layer 30 in consideration of the incident area of the light emitted from the light emitting device. However, the distribution of the wavelength conversion material in the wavelength conversion structure ).

11 is a view for explaining the distribution of the wavelength conversion material of the wavelength conversion structure according to the embodiment of the present application.

Referring to FIG. 11, the wavelength conversion layer 30 may include a first region and a second region.

The first region may be a region spaced apart from the light emitting device, and the second region may be a region adjacent to the light emitting device. The first region may be a region where light from the light emitting element is incident, and the second region may be a region where light from the light emitting element is not incident. The first region may be a region where light from the light emitting element is directly incident without reflection, and the second region may be a region where light from the light emitting element is not directly incident.

The boundary between the first region and the second region may correspond to the boundary of the irradiation region of the light emitting device. The boundary of the irradiation region of the light emitting element may be the boundary between the region where the light from the light emitting element is incident and the region where the light is not incident.

The boundary between the first region and the second region may not coincide with the boundary of the irradiation region of the light emitting element. Although not shown in the figure, the boundary between the first region and the second region may be parallel to the light-emitting surface of the light-emitting element. In other words, the boundary between the first region and the second region may be perpendicular to the light incidence surface of the wavelength conversion layer 30. [

The distribution density of the wavelength conversion material in the first region may be higher than the distribution density of the wavelength conversion material in the second region. As a result, the efficiency of the wavelength conversion structure (i.e., the degree to which the light emitted from the wavelength conversion structure is close to the white light) can be increased. This is related to the fact that as the wavelength conversion material contained in the incident region of light increases (i.e., the density increases), the amount of light emitted due to the wavelength change may also increase.

The wavelength conversion structure according to this embodiment is different from the wavelength conversion layer 30 only. Since the wavelength conversion structure can be formed only of the wavelength conversion layer 30 without the support, the same effect can be realized by a simpler method, and the support can be omitted, and the manufacturing cost can be reduced have. In addition, it is possible to prevent the wavelength conversion layer 30 from being detached from the support due to an external impact, and the stability of the illumination device can be improved. The wavelength conversion structure can reduce light loss that may occur in the process of transmitting and outputting light through the support 20, thereby improving light efficiency and consequently reducing power consumption.

In the above, several embodiments of the wavelength conversion structure that can be disposed corresponding to one light emitting element have been described. Hereinafter, the wavelength conversion structure disposed corresponding to one or more light emitting devices will be described in more detail. In addition, as already described above, the same reference numerals are assigned to components common to the disclosed embodiments, and a detailed description thereof will be omitted.

3. Third Embodiment

The wavelength conversion structure according to one embodiment of the present application may be composed of at least one wavelength conversion layer 10. [ In other words, it is possible to implement a wavelength conversion structure arranged so as to correspond to a plate on which a plurality of light emitting elements are mounted, so that the wavelength of light emitted from some light emitting elements of the plurality of light emitting elements can be changed. Before describing the process of changing the wavelength of the light emitted from the light emitting device, the components of the wavelength conversion structure according to the present embodiment will be described first.

12 and 13 are views for explaining the wavelength conversion structure according to the third embodiment of the present application.

Referring to FIG. 12, the wavelength conversion structure according to an embodiment of the present application may include a support 20 and a plurality of wavelength conversion layers 10.

The support 20 may have a size corresponding to a part or all of the plate provided with the plurality of light emitting devices. In this regard, when the size of the support 20 corresponds to a part of the plate, the shape of the support 20 is not necessarily the same as the shape of the plate. For example, when the shape of the plate is rectangular, the shape of the support 20 may be a curved shape. Or a shape corresponding to the edge of the plate, or a shape corresponding to one of the surfaces.

The support 20 may comprise a hollow. In other words, when the support 20 is positioned above the plate, an opening area may be formed at a position corresponding to the light emitting element.

The wavelength conversion layer 10 may be formed on the inner surface (on the side where the hollow is formed) of the support 20. In other words, the wavelength conversion layer 10 may be located in part or all of the plurality of hollows.

The wavelength conversion structure according to this embodiment may be located on the upper surface of the plate on which a plurality of light emitting elements are provided (i.e., the surface on which the light emitting element is located) as shown in Fig. 12 (b).

Fig. 12 (b) is a view for explaining the path of light emitted from the plate on which the plurality of light emitting elements are installed.

Referring to FIG. 12, the light emitted from the light emitting device may be emitted in the hollow direction of the wavelength conversion structure. That is, a part of the light emitted from the light emitting device can be emitted in the hollow direction without transmitting the wavelength conversion layer 10. Therefore, light having the same wavelength as the light emitted from the light emitting element can be emitted through the hollow.

When the wavelength conversion layer 10 is not formed in the hollow, light having the same wavelength as the light emitted from the light emitting device can be emitted through the hollow as described above. However, the wavelength conversion layer 10 The light having a different wavelength may be emitted from the light emitting element. In other words, a part of the light emitted from the light emitting element can be transmitted through the wavelength conversion layer 10 and emitted. A part of the light incident on the wavelength conversion layer 10 may be excited from the quantum dot or the phosphor contained in the wavelength conversion layer 10 and emitted. A part of the light incident in the direction of the wavelength conversion layer 10 may be converted and emitted by the quantum dot or the phosphor. The wavelength-converted light may be emitted from the wavelength conversion layer 10 or the support 20.

In addition, the light emitted from the light emitting device is relatively small, but can be transmitted through the support 20 and emitted.

Therefore, the light emitted from the wavelength conversion structure may include light transmitted through the wavelength conversion layer 10, light passing through the hollow, and / or light transmitted through the support 20. Therefore, the light incident on the wavelength conversion structure can be changed to a wavelength distribution and output to the wavelength conversion structure. Thus, it is possible to cause light closer to the white light to be emitted through the wavelength conversion structure.

Referring to FIG. 13, the support 20 may not include a hollow. In other words, the support 20 may be a hollow plate formed to be positioned above the plurality of light emitting devices.

In addition, the wavelength conversion layer 10 may not include a hollow. That is, the hollow may be embedded in the wavelength conversion layer 10.

Therefore, the wavelength conversion layer 10 may be distributed in the lower part of the hollow plate so as to correspond to several light emitting devices. Alternatively, the wavelength conversion layer may be embedded in a cavity formed in the lower part of the hollow plate to correspond to several light emitting devices. Alternatively, the wavelength conversion structure may be embodied by embedding a portion of the hollow portion of the wavelength conversion layer 10 in the lower portion of the hollow plate so as to correspond to several light emitting devices.

14 is a view for explaining a coupling corresponding to a plurality of light emitting elements of a wavelength conversion structure according to an embodiment of the present application.

The wavelength conversion structure according to the present application can be fitted to a plate on which a plurality of light emitting elements are arranged. That is, referring to FIG. 14 (a), a structure (hereinafter, a structure) for coupling to the plate such that the lower side of the outer side of the wavelength conversion structure (that is, the edge of the wavelength conversion structure) Can be located. For example, it may be a groove corresponding to the lower side shape of the wavelength conversion structure.

The lower portion of the wavelength conversion structure may be formed in a shape for coupling the wavelength conversion structure to the structure formed on the plate. For example, referring to FIG. 14 (b), the lower part of the wavelength conversion structure may have a columnar shape.

Alternatively, the wavelength conversion structure may be located outside the wavelength conversion structure (i.e., the edge of the wavelength conversion structure), as well as inside the plate (for example, around the region where the hollow is located) for more stable coupling And may further include one or more pillars.

A column may be provided on the plate so that the wavelength conversion structure according to the present application is disposed on the light emitting device. That is, the wavelength conversion structure may include a structure for sandwiching the column. For example, the wavelength conversion structure may have a groove for fitting.

Figs. 15 and 16 are diagrams for explaining a layout change of the wavelength conversion structure according to an embodiment of the present application. Fig.

The wavelength conversion structure according to one embodiment of the present application can be implemented so that the wavelength conversion structure 100 formed to be disposed corresponding to one light emitting element can be attached to and detached from the outer frame 50. For example, referring to FIG. 15, an outer frame 50 of the same size as the plate may be provided.

The outer frame 50 may include a hollow for each position corresponding to the light emitting device. In addition, the outer frame 50 may be a simple frame that does not include the wavelength conversion layer 10. In addition, although the outer frame 50 generally transmits light, it may be a material that does not transmit light.

The wavelength conversion structure according to an embodiment of the present invention may be detachably attached to the outer frame 50. In particular, the wavelength conversion structure may be a wavelength conversion structure according to the first embodiment.

The wavelength conversion structure of this type can be fitted in the hollow corresponding to the light emitting device at a desired position of the hollow formed in the outer frame 50 according to the user's need. Accordingly, the user can change the wavelength of light output from the light emitting device at a desired position among the light emitting devices.

This embodiment can be implemented in order to realize the wavelength distribution of a desired total luminous element even when a plurality of luminous elements have different wavelength distributions (for example, a blue LED and a red LED).

Referring to FIG. 16, the wavelength conversion structure 200 according to an embodiment of the present application may be coupled to a part of a plate on which a plurality of light emitting devices are disposed. In other words, the wavelength conversion structure 200 corresponding to the plurality of light emitting devices according to the present application may be smaller than the size of the plate. Further, the light emitting devices may be disposed on top of all the light emitting devices included in the plate, but may be disposed above some of the light emitting devices included in the plate. At this time, the position where the wavelength conversion structure 200 is coupled may be changed according to the needs of the user.

The wavelength conversion structure disposed on the plate on which the plurality of light emitting devices are disposed may have a rectangular shape as shown in FIG. Alternatively, it may be a bent shape. Or may be formed on one side of the plate. The wavelength conversion structure implemented in various forms may be disposed on the plate.

In the above, the wavelength conversion structures according to the first to third embodiments of the present application have been described. The wavelength conversion structure according to the fourth embodiment to be described below is implemented to be located between the light emitting device and the light emitting device. As described above, in describing the fourth embodiment, the same reference numerals are assigned to the components common to the first to third embodiments, and the detailed description is omitted.

4. Fourth Embodiment

17 is a view for explaining the wavelength conversion structure according to the fourth embodiment of the present application.

The wavelength conversion structure according to an embodiment of the present application may be disposed between a plurality of light emitting elements.

The wavelength conversion structure may be configured to correspond to a distance between the first light emitting device and the second light emitting device. Alternatively, the support 20 may be configured to correspond to a defined width from a plurality of light emitting elements formed around the wavelength conversion structure.

The wavelength conversion layer 10 may be formed on at least one surface of the support 20. [ For example, when the support 20 has a rectangular column shape, the wavelength conversion layer 10 may be formed on one surface and may be formed on the back surface so as to face each other. For example, the light emitting device may be formed on all of the surfaces facing the light emitting device.

The wavelength conversion structure may include a protrusion for surrounding the light emitting element, as shown in Fig. 17 (b). In addition, the wavelength conversion layer 10 may be formed on the protrusion. The protrusions may be formed on either side or both sides. If necessary, the protrusions may be provided on all surfaces that are formed to face the light emitting device.

In the foregoing, several embodiments of the wavelength conversion structure according to the present application have been described. However, the scope of right of the present application is not limited to the wavelength conversion structure according to the embodiment described above. Hereinafter, the effect that can be obtained by arranging the wavelength conversion structure according to some embodiments described above on the path of light emitted from the light emitting element will be described in more detail based on some experimental data.

5. Arrangement of wavelength conversion structure

The wavelength conversion structure according to the present application can be combined with one light emitting element to obtain light closer to the white light (that is, higher CRI), but it is possible to obtain light corresponding to some light emitting elements of the lighting apparatus including one or more light emitting elements It is possible to obtain light close to the white light. In other words, the wavelength distribution of the light emitted from the lighting device can be changed by changing the wavelength of a part of the light emitted from the light emitting device of the lighting device. A function of allowing light having a more uniform wavelength band to be emitted through the change of the wavelength distribution and thus allowing light near the white light to be emitted from the wavelength conversion structure can be performed by the wavelength conversion structure.

A method of arranging the wavelength conversion structure so as to correspond to a part of the light emitting devices of an illuminating device including one or more light emitting devices, and a change in light efficiency, CRI, color coordinates, and CCT according to the arrangement method will be described.

18 is a view for explaining the arrangement of the wavelength conversion structure according to an embodiment of the present application.

The wavelength conversion structure according to the present application can be arranged in a certain region of a plurality of light emitting devices as shown in Fig. 18 (a).

In a case where the wavelength conversion structure according to the present invention is collectively disposed in an illuminating device including a plurality of light emitting elements (i.e., a plate provided with a plurality of light emitting elements), as shown in Fig. 18 (b) The amount of light having a wavelength is reduced, and the amount of light having a wavelength of a red series is increased, so that light closer to white light is emitted from the wavelength conversion structure.

Table 1 is a table showing the light efficiency, CRI, CIE chromaticity coordinates and CCT variation according to the number of arranged wavelength conversion structures according to an embodiment of the present application.

In this embodiment, the wavelength conversion structure is disposed in parallel with the light emitting device, as shown in FIG. 12, in positioning the wavelength conversion structure in a plurality of light emitting devices.

In addition, the CIE color coordinates indicate the color of light output from a plurality of light emitting devices (hereinafter, illumination devices) in which the wavelength conversion structure is disposed.

division 0 4 9 Luminous efficiency (lm / W) 127.9 126.0 122.2 Efficiency reduction rate (%) 1.49 4.46 CRI 84.3 85.7 87.3 CIE color coordinates 0.3070, 0.3181 0.3104, 0.3193 0.3134, 0.3191 CCT 6947 6725 6547

Referring to Table 1, it can be seen that as the number of arranged wavelength conversion structures increases, the CRI of light output from the lighting device increases. It is also confirmed that the color deviation of the CIE color coordinates decreases and the CCT also becomes closer to 5000K. That is, due to the arrangement of the wavelength conversion structure, it can be confirmed that as the number of the wavelength conversion structures increases, the light efficiency is partially reduced but light closer to the white light is output from the illumination device.

19 is a view for explaining the arrangement of the wavelength conversion structure according to an embodiment of the present application.

The wavelength conversion structure according to the present application can be dispersed and arranged in a plurality of light emitting elements, as shown in Fig. 19 (a). For example, if there are consecutively arranged light emitting elements, the wavelength conversion structures can be arranged alternately. That is, if the wavelength conversion structure is disposed on one light emitting device, the wavelength conversion structure may not be disposed in the light emitting device side by side (that is, in succession).

In the case where the wavelength conversion structure is dispersed in a lighting apparatus including a plurality of light emitting elements, as shown in Fig. 19 (b), the amount of light having a wavelength of a blue series decreases and the amount of light having a wavelength of a red series And it is also confirmed that light closer to the white light is emitted from the wavelength conversion structure.

Table 2 is a table showing light efficiency, CRI, CIE chromaticity coordinates, and CCT variation according to the number of the wavelength conversion structures arranged according to an embodiment of the present application.

In this embodiment, the wavelength conversion structure is disposed so as to be dispersed in the light emitting device as shown in FIG. 19 in positioning the wavelength conversion structure in a plurality of light emitting devices.

In addition, the CIE color coordinates indicate the color of light output from the lighting apparatus in which the wavelength conversion structure is disposed.

division 0 16 32 Luminous efficiency (lm / W) 127.9 117.7 107.7 Efficiency reduction rate (%) 7.97 15.79 CRI 84.3 89.5 93.6 CIE color coordinates 0.3070, 0.3181 0.3178, 0.3194 0.3282, 0.3194 CCT 6947 6290 5712

Referring to Table 2, it can be seen that as the number of the arranged wavelength conversion structures increases, the CRI of light output from the lighting device increases. It is also confirmed that the color deviation of the CIE color coordinates decreases and the CCT also becomes closer to 5000K. That is, due to the arrangement of the wavelength conversion structure, it can be confirmed that as the number of the wavelength conversion structures increases, the light efficiency is partially reduced but light closer to the white light is output from the illumination device.

By arranging the wavelength conversion structure on the light path of the light emitting element (for example, by inserting the wavelength conversion structure into the light emitting element) through the above-described experimental data, And it can be realized close to white light.

Further, the at least one wavelength conversion structure according to the present application may be continuously arranged so as to correspond to one light-emitting element of the illuminating device, arranged crosswise, or collectively arranged. Also, referring to FIG. 20, the wavelength conversion structure may be disposed at the edge (i.e., edge) of the illuminator.

However, according to the results obtained through experiments, it was found that the factor that has the greatest influence on the light output of the lighting apparatus in which the wavelength conversion structure is disposed is close to the white light is the number of the wavelength conversion structures.

Hereinafter, in arranging the wavelength conversion structure according to the present application on the plate, when the diffusion sheet 40 is additionally provided in the illumination device and / or the wavelength conversion structure, the light efficiency, Explain the changes in CRI, color coordinates, and CCT

21 is a diagram for explaining the addition of the diffusion sheet 40 of the wavelength conversion structure according to an embodiment of the present application.

The diffusion sheet 40 may diffuse the incident light and transmit the light to the outside.

The diffusion sheet 40 may be coupled to the wavelength conversion structure. In other words, as shown in FIG. 21, it can be attached to the wavelength conversion structure and provided as one wavelength conversion structure. At this time, the diffusion sheet 40 may be coupled to the upper portion of the wavelength conversion structure. Accordingly, the diffusion sheet 40 coupled to the upper portion can diffuse the light emitted from the one light emitting element and transmit it to the outside.

Alternatively, the diffuser plate 500 may be added to the lighting device. That is, the wavelength conversion structure may be disposed in a part of the plurality of light emitting devices, and the diffusion plate 500 may be disposed on the wavelength conversion structure to diffuse light emitted from the plurality of light emitting devices.

Even when the wavelength conversion structure is dispersed in the plate including a plurality of light emitting elements, as shown in Figs. 18 and 19, the amount of light having a wavelength of a blue series decreases and the amount of light having a wavelength of a red series increases It can be confirmed that light closer to the white light is emitted from the wavelength conversion structure.

Tables 3 and 4 are tables showing the light efficiency, the CRI, the CIE chromaticity coordinates, and the CCT variation according to the number of the wavelength conversion structures arranged according to an embodiment of the present application.

In this embodiment, the wavelength conversion structure is disposed in a plurality of light emitting devices, and the diffuser plate 500 is further included in the lighting device in which the wavelength conversion structure is disposed.

In addition, the CIE color coordinates indicate the color of light output from the lighting apparatus in which the wavelength conversion structure is disposed.

division 0 4 9 Luminous efficiency (lm / W) 83.0 81.3 79.1 Efficiency reduction rate (%) 2.05 4.70 CRI 83.9 85.1 87.1 CIE color coordinates 0.3096, 0.3216 0.3127, 0.3226 0.3155, 0.3223 CCT 6744 6556 6399

division 0 16 32 Luminous efficiency (lm / W) 83.0 76.8 71.0 Efficiency reduction rate (%) 7.47 14.46 CRI 83.9 89 93 CIE color coordinates 0.3096, 0.3216 0.3193, 0.3224 0.3287, 0.3224 CCT 6744 6186 5684

Referring to Tables 3 and 4, even when the illuminator in which the wavelength conversion structure is disposed further includes the diffusion plate 500, as the number of the arranged wavelength conversion structures increases, It can be seen that the CRI of the light increases. Also, it can be confirmed that the color coordinates of the CIE color coordinates are reduced in the CIE color coordinates, so that light close to the white light is emitted. Also, it can be confirmed that the CCT becomes closer to 5000K.

In addition, in comparison with Table 1 and Table 2 (i.e., the illuminating device to which the diffusing plate 500 is not added), the illuminating device to which the diffusing plate 500 is not added, It can be confirmed that the light is closer to 100 than the light emitted from the device and emits light closer to natural light. However, since the CCT is closer to 5000K than the light emitted from the lighting apparatus to which the diffusion plate 500 is not added, and the color deviation of the CIE color coordinates is small, Can be confirmed.

<Light Emitting Diode Package (400)>

Referring to FIG. 22, the light emitting diode package 400 according to one embodiment of the present invention may include a package body 70, a lead, a light emitting diode chip, a lens 60, and a wavelength conversion layer 10.

The package body 70 may function as a frame of the light emitting diode package 400. The package body 70 may be formed with recesses that define an area where the light emitting diode chip is mounted.

The lead may function to reflect light.

The leads may be formed on the package body 70. In addition, the lead may include a plurality of leads.

The lead may comprise a metal. In addition, the lead may be electrically connected to an external power source. For example, the leads may supply power to the package body 70.

The light emitting diode chip can output light in a specific wavelength range. The light emitting diode chip can output light having a higher wavelength range than light having a different wavelength range. For example, the light emitting diode chip can output light having a high blue wavelength ratio.

The light emitting diode chip may be mounted on the chip mounting region. The light emitting diode chip may be provided on the lead. In particular, the light emitting diode chip may be bonded onto the lead.

The light emitting diode chip may be positioned on any one of a plurality of leads. The light emitting diode chip may be electrically connected to the lead by a wire. The light emitting diode chip may be electrically connected to the plurality of leads by a plurality of wires.

A lens 60 may be formed on the package body 70 on which the lead and the LED chip are formed. The lens 60 may be formed to surround the lead and the LED chip. The lens 60 may be formed to correspond to the light emitting diode chip. When the light emitting diode chip has a rectangular shape, the lens 60 may be formed in a hexagonal shape having a rectangular cross section, and when the light emitting diode chip has a circular shape, the lens 60 may have a hemispherical shape having a circular cross section .

The lens 60 may include a molding part. The molding part may protect the components of the light emitting diode. In particular, the light emitting diode package 400 may protect the light emitting diode chip, the wire, and the lead with respect to an external material, thereby improving the life of the light emitting diode package 400.

The molding part may fill the space defined by the package body 70 and the lens 60. The molding part may include a silicone resin. In addition, the molding unit may include a plurality of phosphors. The plurality of phosphors may be distributed within the lens 60. The plurality of phosphors may be substantially uniformly distributed within the lens 60.

The phosphor may include an inorganic phosphor or an organic phosphor. The phosphor may include YAG: Ce, YBO3: Ce3 +, Tb3 +; BaMgAl10O17: Eu2 +, Mn2 +; (Sr, Ca, Ba) (Al, Ga) 2S4: Eu2 +; ZnS: Cu, Al; Ca8Mg (SiO4) 4Cl2: Eu2 +, Mn2 +; Ba2SiO4: Eu &lt; 2 + &gt;; (Ba, Sr) 2SiO4: Eu &lt; 2 + &gt;; Ba2 (Mg, Zn) Si2O7: Eu2 +; (Ba, Sr) Al 2 O 4: Eu 2+; Sr2Si3O8.2SrCl2: Eu2 +; (Sr, Mg, Ca) 10 (PO4) 6Cl2: Eu2 +; BaMgAl10O17: Eu &lt; 2 + &gt;; BaMg2Al16O27: Eu &lt; 2 + &gt;; Sr, Ca, Ba, Mg) P2O7: Eu &lt; 2 + &gt;, Mn &lt; 2 + &gt;; (CaLa2S4: Ce3 +, SrY2S4: Eu2 +, (Ca, Sr) S: Eu2 +, SrS: Eu2 +, Y2O3: Eu3 +, Bi3 +, YVO4: Eu3 +, Bi3 +, Y2O2S: Eu3 +, Bi3 +, Y2O2S: Eu3 + Any one of the phosphors may be used.

The phosphor may function to change the wavelength of incident light. In other words, the phosphor may generate excitation light having a wavelength different from that of the light emitting diode chip by being irradiated with light generated from the light emitting diode chip. That is, the light emitted from the light emitting diode chip may be excited with light having a different wavelength by meeting a plurality of phosphors located in the molding part.

The wavelength conversion layer 10 may function to convert the wavelength of the incident light.

In addition, the wavelength conversion layer 10 may be formed on the side surface of the lens 60. That is, it may be formed on the side of the lens 60 so as to be perpendicular to the light emitting diode chip. The wavelength conversion layer 10 may have an outer shape depending on the shape of the side surface of the lens 60. For example, if the lens 60 is a curved lens 60, the wavelength conversion layer 10 may have a circular column shape.

The wavelength conversion layer 10 may be coupled to the package body 70 and / or the wavelength conversion layer 10 may be coupled to the lens 60.

However, since the wavelength conversion layer 10 has been described in detail, it will not be described here.

However, as shown in FIG. 23 (b), a support body 20 may be formed between the wavelength conversion layer 10 and the lens 60, though this structure is not essential. That is, the supporting body 20 may be positioned on the side surface of the lens 60. For example, the support 20 may be formed to surround the lens 60 that is spaced apart from the light emitting diode chip in the vertical direction

The wavelength conversion layer 10 may be located outside the support 20 (i.e., on the side not facing the light emitting device). The wavelength conversion layer 10 may be formed in contact with the support 20. The wavelength conversion layer 10 may be adhered to the support 20. The wavelength conversion layer 10 may be formed on a portion of the support 20.

Therefore, the support 20 can function to separate the lens 60 and the wavelength conversion layer 10 from each other. That is, the wavelength conversion layer 10 may be spaced apart from the lens 60. In addition, the wavelength conversion layer 10 may be spaced apart from the molding part. The wavelength conversion layer 10 may be spaced apart from the lens 60 and the molding part by the support 20. Accordingly, since the wavelength conversion layer 10 is formed apart from the lens 60 and the molding portion, the heat transmitted from the LED chip, the lens 60, and the molding portion to the wavelength conversion layer 10 is blocked .

The support 20 may be formed as a hollow column. In addition, the support 20 may be formed to correspond to the shape of the light emitting diode chip. For example, when the light emitting diode chip is circular, the support body 20 may have a columnar shape. When the light emitting diode chip is a rectangular shape, the support body 20 may have a rectangular column shape.

The support 20 can transmit light, as described above. Specifically, the support 20 can transmit light emitted from the light emitting diode chip, light excited by the phosphor, and light reflected from the package body 70 and the lead. The support 20 may be a film or glass. The support 20 may be a transparent member.

23 is a view showing a light transmission path of the light emitting diode package 400 according to an embodiment of the present application.

Referring to FIG. 23, in the light emitting diode package 400 according to the embodiment of the present invention, light is emitted from the light emitting diode chip.

A part of the light emitted from the light emitting diode chip can be excited by the fluorescent material inside the lens, a part of the light excited from the fluorescent material can be emitted to the outside of the lens 60, 400 direction and then reflected by the lead and package body 70 and emitted toward the wavelength conversion layer 10.

The light emitted from the lens 60 can be emitted in the direction of the wavelength conversion layer 10. That is, a part of the light emitted from the lens 60 can be transmitted through the wavelength conversion layer 10 and emitted. A part of the light emitted from the lens 60 may be directly incident on the wavelength conversion layer 10 and the light emitting diode package 400 including the support 20 may pass through the support 20, May be incident on the conversion layer (10).

A part of the light incident on the wavelength conversion layer 10 may be excited from the quantum dot or the fluorescent substance contained in the wavelength conversion layer 10 and emitted therefrom. A part of the light incident in the direction of the wavelength conversion layer 10 may be converted and emitted by the quantum dot or the fluorescent material. The wavelength-converted light may be emitted from the wavelength conversion layer 10 or the support 20.

The light emitted from the lens 60 may be emitted into the cavity formed in a direction perpendicular to the LED chip without being incident on the wavelength conversion layer 10 or the support 20. That is, a part of the light emitted from the lens 60 may be emitted in the hollow direction without transmitting the wavelength conversion layer 10. Therefore, light having the same wavelength as the light emitted from the lens 60 can be emitted through the hollow.

The light emitted from the wavelength conversion structure may include light transmitted through the wavelength conversion layer 10 and light passing through the hollow. Therefore, the wavelength distribution of the light incident on the wavelength conversion structure can be changed. That is, light having a wavelength distribution in which red, green, and blue are evenly distributed can be obtained through transmission of the wavelength conversion structure.

24 is a view for explaining a light emitting diode package 400 according to an embodiment of the present application.

Referring to FIG. 24, the light emitting diode package 400 according to the present application may include a package body 70, a light emitting diode chip, a lens 60, an auxiliary layer, and a wavelength conversion layer 10.

The light emitting diode chip may be positioned on the package body 70. The lens 60 may be positioned on the light emitting diode chip. The lens 60 may be formed in a concave shape in the central region. The central region of the lens 60 may have a constant curvature. The outer region of the lens 60 may be formed in a planar shape.

The lens 60 may be filled with a molding part. The molding part may be defined according to the shape of the lens 60. The molding part may be defined according to the shape of the lens 60 and may have a concave shape in the center area. Although not shown, a plurality of phosphors may be formed in the molding part.

The wavelength conversion layer 10 may be supported by an outer area of the lens 60. Also, the wavelength conversion layer 10 may be in the form of a column having a hollow.

The support 20 may be positioned between the wavelength conversion layer 10 and the light emitting diode chip, the molding part, and the lens 60. At this time, the heat generated in the light emitting diode chip, the lens 60 and the molding part can be prevented from being transmitted to the wavelength conversion layer 10 through the support 20, The stability can be improved and the life can be improved.

<Lighting equipment>

25 is a perspective view showing a lighting apparatus including a wavelength conversion structure according to an embodiment of the present application.

Referring to Figure 25 (a), the illumination device according to one embodiment of the present application may include a frame 600. The frame 600 may be formed in a flat shape. A light source may be positioned on the frame 600. The light source may be formed on one side of the frame 600. In particular, the light source may be formed on the frame 600.

Although not shown, the light source may include a light emitting element and a printed circuit board. The light emitting device may be located on the printed circuit board. A plurality of light emitting elements can be mounted on one printed circuit board. The plurality of light emitting devices may be electrically connected to each other through printed wiring boards.

The plurality of light emitting devices can receive power required for driving the light emitting device through a power supply unit. The power supply unit is connected to the printed circuit board through a power supply wiring and transfers power to the printed circuit board. The printed circuit board, which is supplied with power from the power supply unit, supplies power to the mounted light emitting device and transfers power to the adjacent printed circuit board. The adjacent printed circuit board also supplies power to the mounted light emitting device and transfers power to the other printed circuit board through the connection wiring. This is repeated, and power is applied to the plurality of light emitting elements to cause all the light emitting elements to emit light.

The power supply unit may include an AC to DC converter (ADC) that converts AC to DC. The power supply unit converts AC power from the outside into DC power and transmits the DC power to the printed circuit board. The power supply unit may reduce the converted direct current power and transmit the reduced direct current power to the printed circuit board.

The power supply may be located outside the lighting device. Or the power source may be located inside the lighting device. When the power supply unit is located inside the lighting device, the power supply unit may be mounted on at least one of the plurality of printed circuit boards in a chip form.

If the power supply unit includes only an ADC function, a separate DC-DC converter may be mounted on the printed circuit board. The DC-DC converter may convert the power supply voltage received from the power supply unit to correspond to the driving voltage of the light emitting device, and may transfer the power supply voltage to the light emitting device and the adjacent printed circuit board.

And the power unit is mounted on the printed circuit board, so that the lighting apparatus can be operated and installed integrally without a separate power source unit, which facilitates installation and transportation.

The printed circuit board may include a metallic material. The printed circuit board may be a metal PCB including a material such as Al and Cu. The printed circuit board may be FR1, FR4, CEM1 PCB. The printed circuit board may include epoxy or phenol.

In addition, the printed circuit board may be a flexible printed circuit board which can be rotated by an external force.

The printed circuit board may be positioned on the frame 600.

The light emitting device formed on the frame 600 may be the light emitting diode package 400 described above. Alternatively, the light emitting device may include the light emitting diode package 400 described above and a general light emitting diode.

The illumination device may include a light guide plate. The light guide plate may be positioned on the light emitting device (i.e., on the frame 600). The light guide plate may convert the light output from the light emitting diode package 400 from light to light.

The illumination device may further include a buffer member. The buffer member may serve to protect the internal structure of the planar illumination device from an external impact. The buffer member may be positioned on the light guide plate.

A cover may be located on the buffer member. The cover can prevent foreign matter from entering the planar illumination device from the outside.

As another example, the light emitting device may be a general light emitting device including the light emitting diode and the lens 60. At this time, the illumination device according to an embodiment of the present application may further include the wavelength conversion structure.

The illumination device according to the present embodiment may have the wavelength conversion structure 200 placed on the frame 600.

For example, the wavelength conversion structure may be located in an area spaced apart from the light emitting device in a direction in which light is emitted. The wavelength conversion structure may be formed to be parallel to the printed circuit board. In other words, the wavelength conversion structure may be arranged to be parallel to the frame 600.

Alternatively, the wavelength conversion structure may be disposed in contact with the light emitting device.

Although not required, the light guide plate and / or the buffer member may be positioned on the wavelength conversion structure.

The cover may be located on the wavelength conversion structure.

The illumination device according to one embodiment of the present application may include a diffusion plate 500 as shown in Fig. 25 (b). That is, a part of the plurality of light emitting devices is a light emitting diode package 400, and the light emitting diode package 400 is disposed on the frame 600 and the frame to diffuse the light emitted from the plurality of light emitting devices. The diffusion plate 500 may be disposed.

The diffuser plate 500 diffuses the incident light and transmits the diffused light to the outside. In other words, the diffusion plate 500 can perform a function of diffusing / scattering light of the light emitting device having high linearity.

While the present invention has been described in connection with what is presently considered to be the most practical and preferred embodiment, it is to be understood that the invention is not limited to the disclosed embodiments, but, on the contrary, It will be apparent to those skilled in the art that changes or modifications may fall within the scope of the appended claims.

100, 200, 300: Wavelength conversion structure
400: Light Emitting Diode Package
500: diffusion plate
600: frame
10, 30: wavelength conversion layer
20: Support
40: diffusion sheet
50: outer frame
60: Lens
65: Light emitting diode chip
70: Package body

Claims (23)

1. A wavelength conversion structure provided on a light emitting device including a light emitting diode chip, a lens formed on the light emitting diode chip, and a molding part located inside the lens and having a phosphor distributed therein,
Wherein the wavelength conversion structure comprises:
A support comprising a hollow formed through the wavelength conversion structure, the inner surface of the support defined by the hollow; And
And a wavelength conversion layer provided to be positioned between the light emitting device and the support and converting the wavelength of the incident light and outputting the converted wavelength,
Wherein light emitted from the lens of the light emitting element includes first light incident on the wavelength conversion layer and second light emitted to the hollow,
The first light is converted into third light having a wavelength distribution different from that of the first light through the wavelength conversion layer,
Wherein the light incident on the wavelength conversion layer includes light excited through the phosphor from light generated in the light emitting diode chip,
Wherein the wavelength conversion layer is applied to at least one region of the support,
Wavelength conversion structure.
The method according to claim 1,
Wherein the wavelength conversion layer is formed on all inner surfaces defined by the hollow.
The method according to claim 1,
And the shape of the hollow cross section corresponds to the shape of the cross section of the lens.
The method according to claim 1,
Wherein the wavelength conversion layer comprises a plurality of phosphors.
The method according to claim 1,
Wherein the wavelength conversion layer includes a plurality of quantum dots.
The method according to claim 1,
Wherein the wavelength conversion layer and the lower portion of the support differ in distance from the plate on which the light emitting device is provided.
The method according to claim 1,
Wherein the wavelength conversion structure changes a wavelength distribution of light emitted from the lens to increase CRI of light emitted from the lens.
The method according to claim 1,
Wherein the support and the wavelength conversion layer are integrally formed.
delete The method according to claim 1,
And a diffusion plate positioned at an upper end of the wavelength conversion layer and diffusing light output from the wavelength conversion layer.
11. The method of claim 10,
And the diffusion plate is coupled to the support.
An outer frame formed to be detachable from the wavelength conversion structure according to any one of claims 1 to 8, 10 and 11.
The wavelength conversion structure according to any one of claims 1 to 8, 10 and 11;
A light emitting element including a light emitting diode chip;
A molding part including a phosphor for converting a wavelength of light from the light emitting element and outputting the converted light; And
Wherein the wavelength conversion structure is accommodated in the body.
A wavelength conversion structure disposed in correspondence with at least one light emitting device including a light emitting diode chip, a lens formed on the light emitting diode chip, and a molding part disposed inside the lens and having a phosphor distributed therein,
The wavelength conversion structure including at least one hollow,
A support defining an outline of the wavelength conversion structure; And
And a wavelength conversion layer for converting the wavelength of the incident light and outputting the wavelength to the outside,
A cavity formed in the wavelength conversion structure is positioned to correspond to the light emitting element,
Wherein the wavelength conversion layer is formed in one of the at least one hollow,
Wherein the wavelength conversion layer is formed on the inner surface of the support defined by the hollow,
Wherein the light incident on the wavelength conversion layer includes light excited through the phosphor from light generated in the light emitting diode chip,
Wherein the wavelength conversion layer is applied to at least one region of the support.
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