TWI421433B - Light source module using quantum dots, backlight unit employing the light source module, display apparatus, and illumination apparatus - Google Patents

Description

a light source module using a quantum dot, a backlight unit using the light source module, a display device, and a lighting device

The invention relates to a light source module using quantum dots, a backlight unit using the light source module, a display device and a lighting device.

A quantum dot is a nano crystal having a diameter equal to or less than about 10 nanometers (nm), which is a semiconductor material composition and causes a quantum confinement effect. Compared to typical phosphors, quantum dots produce denser light in narrower wavelength bands. When the excited electrons are transported from the conduction band to the valence band, the quantum dots emit light and have the property that the wavelength of the light changes according to the particle size even for the same material. Since the wavelength of light varies according to the size of the quantum dot, light having a desired wavelength region can be obtained by controlling the size of the quantum dot.

Quantum dots are naturally coordinated and dispersed in organic solvents. If the quantum dots are not properly dispersed or exposed to oxygen or moisture, the light emission efficiency is lowered. In order to solve this problem, a method of covering quantum dots with an organic material or a material having a large band gap has been developed. However, the above method has problems in terms of process or cost. Therefore, there is a need for a method for more stably utilizing quantum dots with higher light emission performance. For example, a method of protecting quantum dots from oxygen or moisture by inserting an organic solvent or polymer, wherein the quantum dots are dispersed into a polymer cell or a glass cell, And tried to use it in lighting equipment.

The invention provides a light source module capable of stably using quantum dots and uses The backlight unit, the display device and the illumination device of the light source module.

According to an aspect of the present invention, a light source module using a quantum dot is provided. The light source module includes: a light emitting device package including a substrate and a plurality of light emitting device chips mounted on the substrate, and is arranged to emit light toward the light emitting direction. A quantum dot sealing package on the device package, the quantum dot sealing package comprising a sealing member and the quantum dot sealed by the sealing member.

The quantum dot sealing package can be directly bonded to the light emitting device package. Alternatively, the quantum dot sealing package is separate from the light emitting device package. In this case, the light source module may further include a support member to support the quantum dot sealing package to be separated from the light emitting device package.

The sealing member may be a flat tube. Moreover, the sealing member may be a strip tube. The sealing member can be a glass tube or a polymer tube.

The plurality of light emitting device chips are aligned in a column or a plurality of columns. Moreover, the plurality of light emitting device wafers are arranged in a straight line, a curved line or a predetermined pattern. In this case, the sealing member forms a straight line, a curved line or a predetermined pattern corresponding to the arrangement of the plurality of light-emitting device wafers.

The quantum dots are dispersed in an organic solvent or a polymer resin. In this case, the organic solvent includes at least one of toluene, chloroform and ethanol. Moreover, the polymer resin includes at least one of epoxy, ruthenium, polyethylene, and acrylate.

The quantum dots include yttrium (Si)-based nanocrystals, II-VI based compound semiconductor nanocrystals, III-V based compound semiconductor nanocrystals, based on IV-VI One of the compound semiconductor nanocrystals and a mixture thereof. From CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, HgS, HgSe, HGTE, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HggZnTe, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe and HgZnSTe are alternatively formed into the compound semiconductor nanocrystals based on the II-VI group. From GaN, GAP, GaAs, AlN, AlP, AlAs, InN, InP, InAs, GaNP, GaNAs, GaPAs, AlNP, AlNAs, AlPAs, InNP, InNAs, InPAs, GaAlNP, GaAlNAs, GaAlPAs, GaInNP, GaInNAs, GaInPAs, InAlNP InAlNAs and InAlPAs are selectively formed into the compound semiconductor nanocrystals based on the III-V group. The compound semiconductor nanocrystal based on the IV-VI group can be formed of SbTe.

The quantum dot includes a first quantum dot sized to allow a peak wavelength to be in the wavelength band of green light. Moreover, the quantum dot comprises a second quantum dot sized to allow the peak wavelength to be in the wavelength band of red light.

The plurality of light emitting device wafers may be light emitting diode (LED) wafers or organic light emitting diode (OLED) wafers.

The illuminating device package may be a wafer-on-substrate (COB) type package. For example, the substrate can be a printed circuit board (PCB), and the plurality of light emitting device wafers are directly mounted to the substrate. The light source module at this time includes a translucent resin encapsulating portion to cover a plurality of illuminating device wafers and is prepared on the substrate.

The substrate can be a printed circuit board, each of the plurality of illuminations The device chip package is packaged into a chip package on which the chip package is mounted.

The light emitting device package 410 may be a wafer bonded to a lead frame (COL) type package. For example, the substrate includes a lead frame for electrically connecting the plurality of light emitting device wafers to each other, and a mold member to fix the plurality of light emitting device wafers and the lead frame.

The plurality of illuminator wafers are blue LED wafers, and wherein the quantum dots comprise a first quantum dot sized to allow a peak wavelength in the wavelength band of green light; and a second quantum dot sized to allow a peak wavelength in red light Wavelength band.

The blue light emitted from the blue LED chip has a wavelength of 435 to 470 nm, and the chromaticity coordinate of the green light emitted from the first quantum dot is CIE 1931 in the International Commission on Illumination (CIE; Commission Internationale de l'Eclairage). The ordinate of the coordinate system consisting of four vertices (0.1270, 0.8037), (0.4117, 0.5861), (0.4197, 0.5316), and (0.2555, 0.5030), and the chromaticity of the red light emitted from the second quantum dot The coordinates are at the four vertices (0.5448, 0.4544), (0.7200, 0.2800), (0.6427, 0.2905), and (0.4794, 0.4633) of the CIE 1931 Chromatic Coordinate System of the International Commission on Illumination (CIE; Commission Internationale de l'Eclairage). ) around the area.

The chromaticity coordinates of the green light emitted from the first quantum dot are four vertices (0.1270, 0.8037), (0.3700, 0.6180) of the CIE 1931 chromaticity coordinate system of the International Commission on Illumination (CIE; Commission Internationale de l'Eclairage). ), the area around (0.3700, 0.5800) and (0.2500, 0.5500), and the chromaticity coordinates of the red light emitted from the second quantum dot are Commission of the Lighting Commission (CIE; Commission Internationale de l'Eclairage) CIE 1931 Chromatic Coordinate System consisting of four vertices (0.6000, 0.4000), (0.7200, 0.2800), (0.6427, 0.2905), and (0.6000, 0.4000) .

The blue LED wafer has a full width at half maximum (FWHM) of 10 to 30 nanometers, the first quantum dot has a FWHM of 10 to 60 nanometers, and the second quantum dot has a FWHM of 30 to 80 nanometers.

The plurality of illuminator wafers are ultraviolet LED chips, and the quantum dots comprise a first quantum dot sized to allow a peak wavelength to be in the wavelength band of blue light; and a second quantum dot sized to allow a peak wavelength to be in the wavelength band of green light; And a third quantum dot whose size allows the peak wavelength to be in the wavelength band of red light.

According to another aspect of the present invention, a backlight unit including a light source module using a quantum dot, the light source module includes: a light emitting device package including a substrate and a plurality of light emitting device wafers mounted on the substrate; The dot sealing package is placed on the light emitting device package in a light emitting direction, the quantum dot sealing package includes a sealing member and the quantum dot is sealed by the sealing member; and a light guiding plate.

According to another aspect of the present invention, a display device includes a light source module using a quantum dot, the light source module comprising: a light emitting device package comprising a substrate and a plurality of light emitting device wafers mounted on the substrate; The quantum dot sealing package is disposed on the light emitting device package in a light emitting direction, the quantum dot sealing package includes a sealing member and the quantum dot is sealed by the sealing member; the light guiding plate; and the image panel for displaying an image.

According to another aspect of the present invention, a lighting apparatus is provided, including a light source module using a quantum dot, the light source module comprising: a light emitting device package comprising a substrate and a plurality of light emitting device wafers mounted on the substrate; and a quantum dot sealing package disposed on the light emitting device package in a light emitting direction The quantum dot sealing package includes a sealing member and the quantum dot is sealed by the sealing member; and a power supply unit to supply power to the light source module.

The power source may be external to the lighting device, and the power supply unit may include an interface for receiving power; and a power control unit for controlling a power source supplied to the light source module. In some cases, the power supply can be prepared in the lighting fixture.

Hereinafter, the present invention will be described with reference to the accompanying drawings. In the drawings, the same component symbols indicate the same components, and the size or thickness of the components may be exaggerated for clarity.

1 is a plan view of a light source module 100 using quantum dots 151 in accordance with an embodiment of the present invention. Fig. 2 is a side view of the light source module 100 shown in Fig. 1.

Referring to FIGS. 1 and 2, the light source module 100 according to the present embodiment is a white light source, and includes a light emitting device package 110 including a plurality of light emitting device wafers 130a and 130b, and is disposed in the light emitting device package 110 toward the light emitting direction. The quantum dot sealing package 150 is mounted thereon.

In the light emitting device package 110, the light emitting device wafers 130a and 130b are directly mounted on the circuit substrate 120, such as a printed circuit board (PCB). The illuminator wafers 130a and 130b may be gallium nitride (GaN) based light emitting diode (LED) wafers for emitting blue light. However, in some situations The illuminator wafers 130a and 130b may be ultraviolet LED chips. Alternatively, illuminator wafers 130a and 130b may be organic light emitting diode (OLED) wafers or other known illuminator wafers. A Zener diode wafer can also be mounted to protect the light emitting device wafers 130a and 130b. A plurality of light-emitting device wafers 130a and 130b may be wired using a flip chip bonding method or a wire bonding method. The light-emitting device wafers 130a and 130b can be covered and protected by the transmissive resin encapsulation portion 135. Although the light-emitting device wafers 130a and 130b are covered by the transmissive resin encapsulating portion 135 in a two-pair manner in FIGS. 1 and 2, the embodiment is not limited thereto. For example, one, three, or more of the light-emitting device wafers 130a and 130b may be coated by each of the transmissive resin encapsulating portions 135. Alternatively, the transmissive resin encapsulating portion 135 may be omitted. Further, the light-emitting device wafers 130a and 130b are aligned in a row in the first and second figures, but the embodiment is not limited thereto. For example, illuminator wafers 130a and 130b can be aligned in a plurality of columns, or can be aligned in a curved or predetermined pattern rather than a straight line. The light emitting device package 110 is an example of a wafer on board (COB) type package.

The quantum dot sealing package 150 is bonded toward the light emitting direction and placed on the light emitting device package 110.

The quantum dot sealing package 150 includes a sealing member 155 and quantum dots 151 injected into the sealing member 155. The sealing member 155 protects the quantum dots 151 from an external environment such as oxygen or moisture, and may be a glass tube or a polymer tube formed of a transparent material. The sealing member 155 may be a tube having a linear shape, that is, a strip tube corresponding to the light emitting device wafer The arrangement of 130a and 130b. If the light-emitting device wafers 130a and 130b are arranged in a curved or predetermined pattern, the sealing member 155 may be a correspondingly curved or patterned tube, or may be a flat tube covering the entire area in which the light-emitting device wafers 130a and 130b are arranged. .

The quantum dot 151 is a nanocrystal having a diameter of about 1 to 10 nm and is composed of a semiconductor material and causes a quantum confinement effect. The quantum dot 151 converts the wavelength of light emitted by the light-emitting device wafers 130a and 130b and generates wavelength-converted light, that is, fluorescent light.

Examples of the quantum dot 151 include a yttrium (Si)-based nanocrystal, a II-VI-based compound semiconductor nanocrystal, a III-V-based compound semiconductor nanocrystal, and an IV-VI. Group-based compound semiconductor nanocrystals. According to the present embodiment, the quantum dots 151 may be one or a mixture of the above examples.

In this case, from CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, HgS, HgSe, HgTe, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS , CdHgSe, CdHgTe, HgZnS, HgZnSe, HggZnTe, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe and HgZnSTe may form a compound semiconductor nanocrystal based on Group II-VI. From GaN, GAP, GaAs, AlN, AlP, AlAs, InN, InP, InAs, GaNP, GaNAs, GaPAs, AlNP, AlNAs, AlPAs, InNP, InNAs, InPAs, GaAlNP, GaAlNAs, GaAlPAs, GaInNP, GaInNAs, GaInPAs, InAlNP , InAlNAs and InAlPAs can be selected A compound semiconductor nanocrystal based on a group III-V is formed. Compound semiconductor nanocrystals based on Group IV-VI can be formed, for example, from SbTe.

The quantum dots 151 are naturally coordinated and dispersed in a dispersion medium such as an organic solvent or a polymer resin and sealed by a sealing member 155. The dispersion medium can be any transparent medium that does not affect the wavelength conversion efficiency of the quantum dots 151, does not deteriorate due to light, and does not reflect light or absorb light. For example, the organic solvent may include at least one of toluene, chloroform, and ethanol, and the polymer resin may include at least one of epoxy, oxime, polyethylene, and acrylate. If a polymer resin is used as the dispersion medium, the polymer resin in which the quantum dots 151 are dispersed can be injected into the sealing member 155 and then cured.

When the excited electrons are transmitted from the conduction band to the valence band, the quantum dots 151 emit light, and have a characteristic that the wavelength of light changes according to the particle size even if it is the same material. Since the wavelength of light changes in accordance with the size of the quantum dot 151, light of a desired wavelength region can be obtained by controlling the size of the quantum dot 151. The size of the quantum dot 151 can be controlled by appropriately changing the growth conditions of the nanocrystal.

As noted above, each of the light emitting device wafers 130a and 130b can be a blue LED wafer. In this case, the blue LED wafer can emit light having a dominant wavelength of 435 to 470 nm. At the same time, quantum dot 151 can include a first quantum dot sized to allow a peak wavelength in the wavelength band of green light, and a second quantum dot sized to allow a peak wavelength in the wavelength band of red light. In this case, the sizes of the first and second quantum dots can be appropriately controlled so that the peak wavelength of the first quantum dot is 500 to 550 nm, and the peak wavelength of the second quantum dot is 580 to 660 nm.

At the same time, quantum dots 151 are in a narrower wavelength band than typical phosphorus. Produce more dense light. Thus, at quantum dot 151, the first quantum dot can have a full width half height (FWHM) of 10 to 60 nanometers, and the second quantum dot has a FWHM of 30 to 80 nanometers. Meanwhile, a blue LED wafer having a FWHM of 10 to 30 nm was used as the light-emitting device wafers 130a and 130b.

When quantum dots emitting light of different colors are mixed, if the color ratio of the quantum dots changes, the user can see light of different wavelengths. In order to prevent this problem, it is necessary to mix materials with precise density and precise ratio. When mixing quantum dots, in addition to density, the light emission efficiency of quantum dots must be considered. In a typical white light source using an array of LED packages in which quantum dots are mixed with a forming resin, density control, uniformity, and mixing ratio of quantum dots are limited, so the color of the LED package between these conditions is limited. The coordinates may be biased. However, in the light source module 100, when the quantum dot sealing package 150 is prepared for the plurality of light emitting device wafers 130a and 130b of the light emitting device package 110, the entire light source module 100 may have uniform chromaticity coordinates. Moreover, in the light source module 100, in addition to the light emitting device package 110, when the individually prepared quantum dot sealing package 150 controls the wavelength and intensity of light emission, the desired chromaticity coordinates can be easily obtained.

Fig. 3 is a view showing the light intensity of the wavelength band of light emitted from the light source module 100 shown in Fig. 1. Fig. 4 is a view showing a chromaticity coordinate area of light emitted from the light source module 100 shown in Fig. 1.

The light source module 100 can control the wavelength band by controlling the particle size of the quantum dots 151 to obtain characteristics such as those shown in Table 1.

In Table 1, Wp represents the dominant wavelength of each of blue, green, and red light, and FWHM represents the full width and half height of each of blue, green, and red. Referring to Table 1, blue light is emitted from the light-emitting device wafers 130a and 130b, and green light and red light are emitted from the quantum dots 151, and blue, green, and red light have a distribution of light intensity as shown in FIG.

Moreover, the wavelength band can be controlled by controlling the particle size of the quantum dots 151, and the chromaticity coordinates can be controlled by controlling the density of the quantum dots 151 depending on the particle size. Therefore, as shown in Fig. 4, the particle size and density of the quantum dots 151 can be controlled such that the chromaticity coordinates of the green light of the first quantum dots are at the CIE; Commission Internationale de l'Eclairage CIE 1931. The chromaticity coordinates of the red radiance of the second quantum dot in the chromaticity coordinate system with four vertices (0.1270, 0.8037), (0.4117, 0.5861), (0.4197, 0.5316), and (0.2555, 0.5030) It is located in the CIE 1931 Chroma Coordinate System of the International Commission on Illumination, surrounded by four vertices (0.5448, 0.4544), (0.7200, 0.2800), (0.6427, 0.2905), and (0.4794, 0.4633). As shown in FIG. 4, the light source module 100 having the above distribution of light covers a wider area in the CIE1931 chromaticity coordinate system than the typical phosphorus product, and has a value equal to or greater than that of the National Television System Committee (NTSC). 95% color reproduction and very high intensity light emission.

Furthermore, as described above, since quantum dots 151 produce denser light in a narrower wavelength band than typical phosphors, the first and second quantum dots may be in narrower regions of the chromaticity coordinates. That is, by making the chromaticity coordinate of the green light of the first quantum dot around the four vertices (0.1270, 0.8037), (0.3700, 0.6180), (0.3700, 0.5800) of the CIE 1931 chromaticity coordinate system. The chromaticity coordinates of the red light of the region A' and the second quantum dot (0.2500, 0.5500) are at the four vertices (0.6000, 0.4000), (0.7200, 0.2800) (0.6427, 0.2905) around the CIE 1931 chromaticity coordinate system. And the area B' of (0.6000, 0.4000) further enhances color reproduction.

As described above, the light source module 100 can achieve the highest color reproduction from the combination of the light emitting device wafers 130a and 130b, and by defining the dominant wavelengths of the light emitting device wafers 130a and 130b and the first in the CIE 1931 chromaticity coordinate system. And the chromaticity coordinates of the second quantum dot, the first and second quantum dots are implemented to a certain range or region.

In the light source module 100, the light-emitting device wafers 130a and 130b are blue LED chips and the quantum dots 151 wavelength-convert blue light into red light and green light. However, the invention is not limited thereto. For example, illuminator wafers 130a and 130b can be ultraviolet LED chips and can control the particle size and density of quantum dots 151 to include a first quantum dot having a peak wavelength that is within the wavelength band of blue light, with an allowable peak. The wavelength is a second quantum dot of a size within the wavelength band of green light and a third quantum dot having a size that allows the peak wavelength to be within the wavelength band of red light. In this case, the light-emitting device wafers 130a and 130b, that is, the ultraviolet light LED chips, serve as the only excitation light source for the quantum dot-sealed package 150 that emits white light.

Figure 5 is a plan view of a light source module 200 using quantum dots in accordance with another embodiment of the present invention. Fig. 6 is a side view of the light source module 200 shown in Fig. 5.

Referring to FIGS. 5 and 6, the light source module 200 according to the present embodiment includes a light emitting device package 210 including a plurality of light emitting device wafers 230, and a quantum dot sealing package disposed on the light emitting device package 210 toward the light emitting direction. 150. The quantum dot sealing package 150 can be identical to the quantum dot sealing package 150 of the previous embodiment.

The light source module 200 is different from the light source module 100 of the previous embodiment in that the quantum dot sealing package 150 and the light emitting device package 210 are separated. That is, in the light source module 100, the quantum dot sealing package 150 is directly bonded to the light emitting device package 110. However, in the light source module 200, the quantum dot sealing package 150 is separated from the light emitting device package 210 by the additional support member 240. The quantum dot sealing package 150 can also support the support member 240 in a detachable manner. In this case, the light source characteristics of the light source module 200 can be easily changed by replacing the quantum dot sealing package 150 having different characteristics of the chromaticity coordinates.

Meanwhile, the light emitting device package 210 is a COB type package in which the light emitting device wafers 230 are aligned in a row and directly mounted on the circuit substrate 220, but are not limited thereto.

Figure 7 is a plan view of a light source module 300 using quantum dots in accordance with another embodiment of the present invention. Figure 8 is a side elevational view of the light source module 300 shown in Figure 7.

Referring to Figures 7 and 8, the light source module 300 according to the embodiment is A light emitting device package 310 including a plurality of light emitting device wafers 331 and a quantum dot sealing package 150 disposed on the light emitting device package 310 toward the light emitting direction are included. The quantum dot sealing package 150 can be identical to the quantum dot sealing package 150 of the previous embodiment.

The light source module 300 is different from the light source modules 100 and 200 of the previous embodiment in that the light emitting device chip package 330 is a circuit substrate 320, such as a PCB, bonded in the light emitting device package 310. That is, in the light source module 100, the light-emitting device wafers 130a and 130b are directly mounted on the circuit substrate 120. However, in the light source module 300, the light-emitting device wafer 331 is individually packaged into the light-emitting device chip package 330 by additionally using a mold member 335, and then the light-emitting device chip package 330 is mounted on the circuit substrate 320. on. In the light emitting device chip package 330, the grooves of the mold member 335 to which the light emitting device wafer 331 is attached may form a reflective cavity to improve the directivity of the light emitted from the light emitting device wafer 331.

Although each of the light-emitting device chip packages 330 in FIGS. 7 and 8 is mounted with one light-emitting device wafer 331, two or more light-emitting device wafers 331 may be mounted or a Zener diode wafer may be mounted to protect the light-emitting device. Wafer 331. In addition, although the quantum dot sealing package 150 of FIGS. 7 and 8 is bonded to the light emitting device package 310, the quantum dot sealing package 150 can be supported by the additional support member 240 shown in FIG. The device package 310 is separated.

Figure 9 is a plan view of a light source module 400 using quantum dots in accordance with another embodiment of the present invention. Figure 10 is the light source shown in Figure 9. Side view of module 400.

Referring to FIGS. 9 and 10, the light source module 400 according to the present embodiment is a light-emitting device package 410 including a plurality of light-emitting device wafers 430, and a quantum dot sealing package disposed on the light-emitting device package 410 toward the light-emitting direction. Piece 150. The quantum dot sealing package 150 can be identical to the quantum dot sealing package 150 of the previous embodiment.

The light source module 400 is different from the light source modules 100, 200, and 300 of the previous embodiment in that the light emitting device chip package 410 is a chip on lead-frame (COL) type package. That is, although the illuminating device package 110, 210, 310 of the previous embodiment is a COB type package or the chip package is a package mounted on the circuit substrate, the illuminating device package 410 is a illuminating device wafer 430 The COL-type package is electrically connected by the lead frame 415, and the light-emitting device wafer 430 and the lead frame 415 are packaged by using the mold member 420. In the light emitting device package 410, the recess of the mold member 420 to which the light emitting device wafer 430 is attached may form a reflective cavity to improve the directivity of the light emitted from the light emitting device wafer 430.

Although the recess of each of the mold members 420 in FIGS. 9 and 10 is a light-emitting device wafer 430, two or more light-emitting device wafers 430 may be mounted or a Zener diode wafer may be mounted to protect the light-emitting device. Wafer 430. In addition, although the quantum dot sealing package 150 of FIGS. 9 and 10 is bonded to the light emitting device package 410, the quantum dot sealing package 150 can be supported by the additional support member 240 shown in FIG. The package 410 is separated.

Figure 11 is a schematic illustration of a backlight unit in accordance with an embodiment of the present invention.

Referring to FIG. 11, the backlight unit according to the present embodiment is an edge-type backlight unit, and includes a light guide plate 550 and a light source module 510 disposed on one side of the light guide plate 550. In the light source module 510, the quantum dot sealing package 515 is placed on the light emitting device package 511 in the light emitting direction. According to the previous embodiment, the light source module 510 can be any one of the light source modules 100, 200, 300 and 400.

The light guide plate 550 is a member for guiding light and being transparent. A predetermined pattern of outward light guiding may be formed on one of the two surfaces of the light guiding plate 550. The light source module 510 is placed on one side of the light guide plate 550. Because the light-emitting device chips in the light-emitting device package 511 of the light source module 510 can be arranged in a row and the quantum dot sealing package 515 can be the rod-shaped tube as described above in FIGS. 1 and 2, the quantum dot sealing package 515 The light emitting surface can face the light guide plate 550 on the side. The light emitted by the light source module 510 passes through the light guide plate 550 on the side to enter the light guide plate 550, and is completely reflected and diffused to each place of the light guide plate 550. The light completely reflected in the light guiding plate 550 is emitted outward through the surface of the light guiding plate 550, and a predetermined pattern is formed on the surface (i.e., the light emitting surface) of the light guiding plate 550.

Figure 12 is a schematic illustration of a display device in accordance with an embodiment of the present invention.

Referring to FIG. 12, the display device according to the present embodiment uses the backlight unit shown in FIG. 11, which includes a light source module 510, a light guide plate 550, an optical film 560, and an image panel 570. Optical film 560 improved toward The illuminating light of the image panel 570 is directed to one side of the light emitting surface of the light guiding plate 550. Optical film 560 can include, for example, a prism sheet or a diffuser plate. The image panel 570 is a device that converts an electrical image signal into an image, such as a liquid crystal display (LCD) panel. The light emitted by the light source module 510 passes through one side of the light guiding plate 550 and is emitted through the light emitting surface of the light guiding plate 550 as described above in FIG. 11 and then passes through the optical film 560 to illuminate the rear surface of the image panel 570.

As described above, by using a quantum dot sealing package, the light source module 510 can realize white light with greatly improved color reproduction, so that all the light-emitting device wafers have uniform chromaticity coordinates, so that the color quality of the display device can be greatly improved. In addition, since the quantum dots of the quantum dot sealing package are separated from the external environment by the sealing member, the quantum dots can be stably maintained, thereby greatly improving reliability.

Figure 13 is a schematic illustration of a lighting device 600 in accordance with an embodiment of the present invention. Referring to FIG. 13 , the lighting device 600 according to the embodiment includes a light source module 610 and a power supply unit 650 that supplies power to the light source module 610 .

According to the previous embodiment, the light source module 610 can be any one of the light source modules 100, 200, 300 and 400. The power supply unit 650 may include an interface 651 for receiving power, and a power control unit 655 for controlling a power source to be supplied to the light source module 610. Interface 651 can include a fuse for blocking overcurrent, and an electromagnetic shielding filter for shielding electromagnetic interference signals. The power source can be provided from outside the lighting device 600 or from a battery contained within the lighting device 600. If an alternating current (AC) power source is supplied, the power control unit 655 may include a rectification for converting the alternating current to direct current (DC). A unit, and a constant voltage control unit for converting a direct current (DC) voltage into a voltage suitable for the light source module 610. If the power source is a DC power source having a voltage suitable for the light source module 610 (such as a battery), the rectifying unit and the constant voltage control unit may be omitted. In addition, if a device such as an AC-LED is used as the light-emitting device chip of the light source module 610, the AC power source can be directly supplied to the light source module 610, and in this case, the rectifying unit and the constant voltage control unit can also be omitted. . In addition, the power control unit 655 can control the color temperature to achieve illumination that is sensitive to human body.

The lighting device 600 can be applied to various devices that use light sources. For example, as described above in FIGS. 1 and 2, the arrangement of the light-emitting device wafers and the shape of the quantum dot sealing package of the light source module 610 can be designed in a straight line, a curved line or a predetermined pattern. The lighting device 600 can be a general lighting device for replacing a typical incandescent lamp or fluorescent lamp, and in this case, the particle size of the quantum dot used by the quantum dot sealing package of the light source module 610 can be sealed. A light emission spectrum of a wavelength band in a wide area is obtained.

According to the above embodiment of the present invention, the following effects can be achieved.

First, because the organic solvent or polymer dispersed by the quantum dots is sealed in an additional sealing member, the influence of oxygen or moisture can be prevented, and the light source module can work stably in a hot and humid or hot environment.

Second, because the quantum dot sealing packages are commonly prepared for use with a plurality of light emitting device wafers, the process can be simplified, production efficiency can be improved, and manufacturing costs can be reduced.

Third, since the quantum dot sealing packages are commonly prepared for use with a plurality of light emitting device wafers, it is possible to suppress each of the light emitting device wafers from being separately The deviation of the color distribution of the wavelength-converted light caused by the preparation of the quantum dots makes the entire illuminating device wafer have uniform chromaticity coordinates and can greatly improve color reproduction.

While the present invention has been shown and described with respect to the embodiments of the present invention, it will be understood by those of ordinary skill in the art Various modifications.

100, 200, 300, 400, 510, 610‧‧ ‧ light source module

110, 210, 310, 410‧‧‧Lighting device packages

120, 220, 320‧‧‧ circuit board

130a, 130b, 230, 331‧‧‧ illuminator wafers

135‧‧‧Transparent resin package part

150, 515‧‧‧ Quantum dot sealed package

151‧‧‧ Quantum dots

155‧‧‧ Sealing members

240‧‧‧Support members

330‧‧‧Lighting device chip package

335, 420‧‧ ‧ mould components

415‧‧‧ lead frame

430‧‧‧Lighting device chip

511‧‧‧Lighting device package

550‧‧‧Light guide

560‧‧‧Optical film

570‧‧‧Image panel

600‧‧‧Lighting equipment

650‧‧‧Power supply unit

651‧‧‧ interface

655‧‧‧Power Control Unit

The above and other features and advantages of the present invention will become more apparent from the detailed description of the embodiments of the present invention. 2 is a side view of the light source module shown in FIG. 1; FIG. 3 is a display view of the light intensity of the wavelength band of light emitted by the light source module shown in FIG. 1; 4 is a display diagram of a chromaticity coordinate area of light emitted by the light source module shown in FIG. 1; FIG. 5 is a plan view of a light source module using quantum dots according to another embodiment of the present invention; Figure 6 is a side view of the light source module shown in Figure 5; Figure 7 is a plan view of a light source module using quantum dots according to another embodiment of the present invention; A side view of the light source module shown in the figure; FIG. 9 is a view of the use of quantum dots according to another embodiment of the present invention. A plan view of a light source module; FIG. 10 is a side view of the light source module shown in FIG. 9; FIG. 11 is a schematic view of a backlight unit according to an embodiment of the present invention; BRIEF DESCRIPTION OF THE DRAWINGS FIG. 13 is a schematic diagram of a lighting apparatus in accordance with an embodiment of the present invention.

100‧‧‧Light source module

110‧‧‧Lighting device package

130a‧‧‧Lighting device chip

130b‧‧‧Lighting device chip

150‧‧‧ Quantum dot sealed package

Claims (31)

A light source module using a quantum dot, comprising: a light emitting device package comprising a substrate and a plurality of light emitting device wafers mounted on the substrate; a quantum dot sealing package disposed in a light emitting direction of the light emitting device package, and And comprising a sealing member and the quantum dot sealed by the sealing member, the quantum dot sealing package being separated from the light emitting device package; and a supporting member to support the quantum dot sealing package to be separated from the light emitting device package. The light source module of claim 1, wherein the quantum dot sealing package is directly bonded to the light emitting device package. The light source module of claim 1, wherein the sealing member is a strip tube. The light source module of claim 1, wherein the sealing member is a flat tube. The light source module of claim 1, wherein the sealing member is a glass tube or a polymer tube. The light source module of claim 1, wherein the plurality of light emitting device chips are aligned in a column or a plurality of columns. The light source module of claim 1, wherein the plurality of light emitting device wafers are arranged in a straight line, a curved line or a predetermined pattern. The light source module of claim 7, wherein the sealing member forms a line and a curve corresponding to the arrangement of the plurality of light-emitting device wafers Line, or a predetermined pattern. The light source module of claim 1, wherein the quantum dot is dispersed in an organic solvent or a polymer resin. The light source module of claim 9, wherein the organic solvent comprises at least one of toluene, chloroform and ethanol. The light source module of claim 9, wherein the polymer resin comprises at least one of epoxy, ruthenium, polyethylene, and acrylate. The light source module of claim 1, wherein the quantum dot comprises a yttrium (Si)-based nanocrystal, a II-VI based compound semiconductor nanocrystal, and a III-V One of a group-based compound semiconductor nanocrystal, a compound semiconductor nanocrystal based on the IV-VI group, and a mixture thereof. The light source module according to claim 12, wherein from CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, HgS, HgSe, HGTE, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe , HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HggZnTe, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe and HgZnSTe are formed on the basis of the II-VI group Compound semiconductor nanocrystals. The light source module of claim 12, wherein: GaN, GAP, GaAs, AlN, AlP, AlAs, InN, InP, InAs, GaN, GaNAs, GaPAs, AlNP, AlNAs, AlPAs, InNP, InNAs, InPAs, GaAlNP, GaAlNAs, GaAlPAs, GaInNP, GaInNAs, GaInPAs, InAlNP, InAlNAs and InAlPAs are alternatively formed to form the III-V based compound semiconductor nanocrystals. The light source module of claim 12, wherein the IV-VI based compound semiconductor nanocrystal system is formed of SbTe. The light source module of claim 1, wherein the quantum dot comprises a first quantum dot sized to allow a peak wavelength to be in a wavelength band of green light. The light source module of claim 1, wherein the quantum dot comprises a second quantum dot sized to allow a peak wavelength to be in the wavelength band of red light. The light source module of claim 1, wherein the plurality of light emitting device wafers are light emitting diode (LED) wafers. The light source module of claim 1, wherein the substrate is a printed circuit board (PCB), and wherein the plurality of light emitting device wafers are directly mounted on the substrate. The light source module of claim 19, further comprising a transmissive resin encapsulating portion for coating the plurality of illuminating device wafers and preparing the substrate. The light source module of claim 1, wherein the substrate is a printed circuit board, wherein each of the plurality of light emitting device chip packages is packaged into a chip package, and The chip package is mounted on the substrate. The light source module of claim 1, wherein the substrate comprises: a lead frame for electrically connecting the plurality of light emitting device wafers to each other, and a mold member for fixing the plurality of light emitting device chips and the Lead frame. The light source module of claim 1, wherein the plurality of light emitting device wafers are blue LED chips, and wherein the quantum dots comprise: a first quantum dot, the size of which allows the peak wavelength to be at a wavelength of green light a band; and a second quantum dot whose size allows the peak wavelength to be in the wavelength band of red light. The light source module of claim 23, wherein the blue light emitted from the blue LED chip has a wavelength of 435 to 470 nm, wherein a chromaticity coordinate of the green light emitted from the first quantum dot is The International Commission on Illumination CIE 1931 Chromatic Coordinate System consists of four vertices (0.1270, 0.8037), (0.4117, 0.5861), (0.4197, 0.5316), and (0.2555, 0.5030) surrounding the region, and from which the second quantum dot The chromaticity coordinates of the emitted red light are surrounded by four vertices (0.5448, 0.4544), (0.7200, 0.2800), (0.6427, 0.2905), and (0.4794, 0.4633) in the CIE 1931 chromaticity coordinate system of the International Commission on Illumination. region. The light source module of claim 24, wherein the chromaticity coordinates of the green light emitted from the first quantum dot are four vertices (0.1270, 0.8037) in the CIE 1931 chromaticity coordinate system of the International Commission on Illumination , (0.3700, 0.6180), (0.3700, 0.5800) and (0.2500, 0.5500) surrounding the region, and the chromaticity coordinates of the red light emitted from the second quantum dot are in the CIE 1931 Chroma Coordinate System of the International Commission on Illumination The area surrounded by four vertices (0.6000, 0.4000), (0.7200, 0.2800), (0.6427, 0.2905), and (0.6000, 0.4000). The light source module of claim 23, wherein the blue LED chip has a full width at half maximum (FWHM) of 10 to 30 nm, wherein the first quantum dot has a FWHM of 10 to 60 nm. And wherein the second quantum dot has a FWHM of 30 to 80 nm. The light source module of claim 1, wherein the plurality of light emitting device wafers are ultraviolet LED chips, and wherein the quantum dots comprise: a first quantum dot, the size of which allows the peak wavelength to be in the wavelength band of the blue light a second quantum dot whose size allows the peak wavelength to be in the wavelength band of green light; and a third quantum dot whose size allows the peak wavelength to be in the wavelength band of red light. A backlight unit comprising: a light source module according to any one of claims 1 to 27; Group; and light guide plate. A display device comprising: a light source module according to any one of claims 1 to 27; a light guide plate; and an image panel for displaying an image. A lighting device comprising: the light source module according to any one of claims 1 to 27; and a power supply unit for supplying power to the light source module. The lighting device of claim 30, wherein the power supply unit comprises: an interface for receiving power; and a power control unit for controlling a power supply to the light source module.