KR101933778B1 - Method for manufacturing a gallium nitride substrate - Google Patents

Method for manufacturing a gallium nitride substrate Download PDF

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KR101933778B1
KR101933778B1 KR1020170010707A KR20170010707A KR101933778B1 KR 101933778 B1 KR101933778 B1 KR 101933778B1 KR 1020170010707 A KR1020170010707 A KR 1020170010707A KR 20170010707 A KR20170010707 A KR 20170010707A KR 101933778 B1 KR101933778 B1 KR 101933778B1
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gallium nitride
polar
substrate
mask pattern
polar gallium
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KR1020170010707A
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KR20180086806A (en
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김진교
장동수
주미연
김화섭
김동회
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경희대학교 산학협력단
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Priority to PCT/KR2017/001441 priority patent/WO2018135688A1/en
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    • H01L21/02247—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by nitridation, e.g. nitridation of the substrate
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    • H01L2924/1033—Gallium nitride [GaN]

Abstract

The present invention discloses a method of manufacturing a gallium nitride substrate. A method of fabricating a gallium nitride substrate according to an embodiment of the present invention includes: forming a mask pattern including at least one window region and a protruding region on a growth substrate; Forming an epitaxial lateral overgrowth (ELOG) on gallium nitride (GaN) on the growth substrate to form gallium nitride including N-polar gallium nitride and Ga-polar gallium nitride; Selectively etching the N-polar gallium nitride; And removing the mask pattern.

Description

METHOD FOR MANUFACTURING A GALLIUM NITRIDE SUBSTRATE [0001]

Embodiments of the present invention are directed to a method of fabricating a gallium nitride substrate using epitaxial lateral overgrowth (ELOG) and selective etching.

In recent years, III-V group nitride semiconductors such as gallium nitride (GaN) have been widely used in light emitting diodes (LED), laser diodes (LD), solar cells, optoelectronic devices, laser diodes, Devices and semiconductor optical devices. The III-V group nitride semiconductors are usually made of a semiconductor material having a composition formula of AlxInyGa1-x-yN (0? X? 1, 0? Y? 1, 0? X + y? Such nitride semiconductor optical devices are used as light sources for various products such as a backlight of a cellular phone, a keypad, a display board, and a lighting device.

However, unlike silicon (Si), gallium nitride (GaN) is difficult to produce an ingot, and therefore it is difficult to manufacture a single crystal substrate. Thus, gallium nitride is grown on a sapphire substrate, a silicon carbide substrate, or a silicon substrate by heteroepitaxial growth of a gallium nitride film, and then the substrate is separated to produce gallium nitride.

However, since the method of forming gallium nitride as described above is liable to be loosened or relaxed due to the misalignment of the lattice pairs between the layers, the possibility of dislocation becomes very high, which leads to a shortening of the life of the device, .

In addition, the production of gallium nitride in high quality is not suitable for growth substrates that are not closely matched to the crystalline properties of gallium nitride because there is no suitable growth substrate to match high quality bulk crystals and / (E.g., threading dislocation (TD) in GaN, particularly at the interface between the growth substrate and GaN).

In addition, a laser lift off (LLO) method or a chemical lift off (CLO) method was used as a technique for separating gallium nitride.

However, in the laser lift off (LLO) method, the interface between the substrate and the thick film is melted and separated by a laser, which causes a high defect occurrence rate and a high cost in the separation process, and a chemical lift off (CLO) The chemical lift off method is relatively inexpensive and the incidence of additional defects is low in the separation process. However, since a chemically etchable sacrificial layer is required, the crystallinity of the gallium nitride grown on the sacrificial layer is relatively low .

Korean Patent No. 10-1355086, " Method for producing a semi-polar nitride layer using a nanofiller structure & U.S. Patent No. 7,462,893, "Method of fabricating GaN" European Patent No. 0966047, " GaN single crystal substrate and method of producing same "

Chu-Young Cho, Growth and separation of high quality GaN epilayer from sapphire substrate by lateral epitaxial overgrowth and wet chemical etching, 2010 Seohwi Woo, Novel in-situ self-separation of a 2 in. free-standing m-plane GaN wafer from m-plane sapphire substrate by HCl chemical reaction etching in hydride vapor-phase epitaxy, 2016

An object of embodiments of the present invention is to epitaxially side-overgrow (ELOG) gallium nitride to selectively grow N-polar gallium nitride and Ga-polar gallium nitride, Free gallium nitride substrate and a high-quality gallium nitride template substrate using a process of removing gallium nitride.

An object of embodiments of the present invention is to epitaxially side-overgrow (ELOG) gallium nitride to selectively grow N-polar gallium nitride and Ga-polar gallium nitride, To reduce the defect ratio of the gallium nitride substrate by using a process of removing gallium nitride.

It is an object of embodiments of the present invention to remove the growth substrate from gallium nitride using a chemical etching that does not require a sacrificial layer to reduce damage to the gallium nitride substrate due to the growth substrate removal process and to improve the properties of a high quality gallium nitride substrate .

A method of fabricating a gallium nitride substrate according to an embodiment of the present invention includes forming a mask pattern including at least one window region and a protrusion region on a growth substrate; Forming an epitaxial lateral overgrowth (ELOG) on gallium nitride (GaN) on the growth substrate to form gallium nitride including N-polar gallium nitride and Ga-polar gallium nitride; Selectively etching the N-polar gallium nitride; And removing the mask pattern.

Only the N-polarity gallium nitride may be grown on the window region, and the Ga-polar gallium nitride alone may be grown on the protruding region, or the N-polar gallium nitride and the Ga-polar gallium nitride may be mixed and grown.

The step of selectively etching the N-polarity gallium nitride may include a step of growing the Ga-polar gallium nitride laterally.

The step of selectively etching the N-polar gallium nitride may use potassium hydroxide (KOH).

The growth substrate may be sapphire, gallium arsenide (GaAs), spinel, silicon (Si), indium phosphide (InP), or silicon carbide (SiC) .

The mask pattern may be a silicon oxide; (silicon oxynitride SiON) (SiO 2;; silicon oxide), silicon nitride (SiNx silicon nitride), or silicon oxynitride.

According to another embodiment of the present invention, there is provided a method for fabricating a gallium nitride substrate, comprising: forming a mask pattern including at least one window region and a protruding region on a growth substrate; Forming an epitaxial lateral overgrowth (ELOG) on gallium nitride (GaN) on the growth substrate to form gallium nitride including N-polar gallium nitride and Ga-polar gallium nitride; Selectively etching the N-polar gallium nitride; Removing the mask pattern; The method of claim 1, further comprising: attaching free-standing gallium nitride containing Ga-polar gallium nitride on a temporary substrate on which an amorphous thin film is deposited; free-standing gallium nitride.

A method of fabricating a gallium nitride template substrate according to an embodiment of the present invention includes forming a mask pattern including at least one window region and a protruding region on a growth substrate; Forming an epitaxial lateral overgrowth (ELOG) on gallium nitride (GaN) on the growth substrate to form gallium nitride including N-polar gallium nitride and Ga-polar gallium nitride; And selectively etching the N-polar gallium nitride.

The method of manufacturing a gallium nitride substrate according to embodiments of the present invention includes epitaxially lateral overgrowing (GaN) gallium nitride to selectively grow N-polar gallium nitride and Ga-polar gallium nitride , And selectively removing the N-polar gallium nitride to produce a gallium nitride substrate, a high-quality free-standing gallium nitride substrate can be manufactured.

The method of manufacturing a gallium nitride substrate according to embodiments of the present invention includes epitaxially lateral overgrowing (GaN) gallium nitride to selectively grow N-polar gallium nitride and Ga-polar gallium nitride , And selectively removing the N-polar gallium nitride, the defect ratio of the gallium nitride substrate can be reduced.

The method of manufacturing a gallium nitride substrate according to embodiments of the present invention reduces the damage of a gallium nitride substrate due to a growth substrate removal process by removing a growth substrate from gallium nitride by using a chemical etching that does not require a sacrificial layer, The characteristics of the gallium nitride substrate can be maintained.

1 is a diagram showing the N-polarity and Ga-polarity of gallium nitride.
2A to 2F are cross-sectional views illustrating a method of manufacturing a gallium nitride substrate according to an embodiment of the present invention.
FIG. 3 is a plan view showing Ga-polar gallium nitride formed on a growth substrate and a mask pattern in a method of manufacturing a gallium nitride substrate according to an embodiment of the present invention.
4A to 4H are cross-sectional views illustrating a method of manufacturing a gallium nitride substrate according to another embodiment of the present invention.
5 is a plan view showing Ga-polar gallium nitride after removing a growth substrate and a mask pattern in a method of manufacturing a gallium nitride substrate according to another embodiment of the present invention.

Hereinafter, embodiments will be described in detail with reference to the accompanying drawings. However, the scope of the rights is not limited or limited by these embodiments. Like reference symbols in the drawings denote like elements.

The terms used in the following description are chosen to be generic and universal in the art to which they are related, but other terms may exist depending on the development and / or change in technology, customs, preferences of the technician, and the like. Accordingly, the terminology used in the following description should not be construed as limiting the technical thought, but should be understood in the exemplary language used to describe the embodiments.

Also, in certain cases, there may be a term chosen arbitrarily by the applicant, in which case the detailed description of the meaning will be given in the corresponding description section. Therefore, the term used in the following description should be understood based on the meaning of the term, not the name of a simple term, and the contents throughout the specification.

On the other hand, the terms first, second, etc. may be used to describe various elements, but the elements are not limited by terms. Terms are used only for the purpose of distinguishing one component from another.

It is also to be understood that when a section such as a film, a layer, an area, a configuration request, etc. is referred to as being "on" or "on" another part, And the like are included.

1 is a diagram showing the N-polarity and Ga-polarity of gallium nitride.

Gallium nitride has been used as a core material for various optical devices due to its excellent physical and chemical properties. Gallium nitride is grown and grown on heterogeneous epitaxial substrates such as sapphire, silicon carbide or silicon.

In order to grow gallium nitride, attention should be paid to crystal quality. In particular, the crystal quality may be improved by utilizing epitaxial lateral overgrowth (ELOG).

Epitaxial lateral overgrowth (ELOG) can be grown in the lateral direction as well as on the masking pattern as gallium nitride is grown vertically from the substrate.

In addition, gallium nitride has a " crystal polarity " as well as defects, especially important crystalline properties.

Referring to FIG. 1, gallium (Ga) atoms are shown as large gray spheres, and nitrogen (N) atoms are shown as small black spheres.

As shown in Fig. 1, in gallium nitride (e.g., wurtzite gallium nitride), each gallium atom is tetrahedrally coordinated to four nitrogen atoms.

The gallium nitride may be classified into Ga-polarity (+ c; 10) and N-polarity (-c; Here, the label c indicates a horizontal crystal plane with respect to the plane of the epitaxial film.

It is important to note that the polarity of gallium nitride is not a surface property, but it has a great influence on the bulk properties of gallium nitride, and different properties may be expressed depending on the polarity. Therefore, the device can be fabricated utilizing the polarity characteristic of the epitaxially grown gallium nitride layer.

In the present invention, Ga-polar (+ c; 10) gallium nitride and N-polar (-c; 20) gallium nitride are selectively grown and only gallium nitride of the N- A high-quality free-standing gallium nitride substrate or a high-quality gallium nitride template substrate can be manufactured.

Hereinafter, a technique for manufacturing a gallium nitride substrate according to an embodiment of the present invention will be described with reference to FIGS. 2A to 2F.

2A to 2F are cross-sectional views illustrating a method of manufacturing a gallium nitride substrate according to an embodiment of the present invention.

A method of fabricating a gallium nitride substrate according to an embodiment of the present invention includes epitaxial lateral overgrowth (ELOG) of gallium nitride (GaN) to form N-polar gallium nitride 131 and Ga-polar And gallium nitride 130 containing gallium nitride 132 is formed. Thereafter, only the N-polar gallium nitride 131 is selectively removed using etching, whereby a high-quality free-standing gallium nitride substrate can be manufactured.

In addition, the step of selectively etching the N-polar gallium nitride 131 in the method of manufacturing a gallium nitride substrate according to an embodiment of the present invention may include a step of laterally growing the Ga-polar gallium nitride 132 .

In the method of manufacturing a gallium nitride substrate according to an embodiment of the present invention, gallium nitride grown in the N-polar direction (hereinafter referred to as N-polar gallium nitride) may be formed on the window region 121 (Hereinafter referred to as Ga-polar gallium nitride) grown in the Ga-polar direction can be grown on the protruding region 122. [

2A is a cross-sectional view in which a mask pattern including at least one window region and a protruding region is formed on a growth substrate.

The mask pattern 120 may be patterned using photolithography processes after forming a mask layer on the growth substrate 110 using a deposition process or a solution process.

The mask pattern 120 may include a window region 121 and a protrusion region 122 by a patterning process and then gallium nitride may be grown through the window region 121 of the mask pattern 120. [

The window region 121 or the protrusion region 122 formed in the mask pattern 120 may have a dot shape, a rectangular shape, an elliptical shape, or a stripe shape, but is not limited thereto.

The growth substrate 110 may include at least one of sapphire, gallium arsenide (GaAs), spinel, silicon (Si), indium phosphide (InP), and silicon carbide (SiC) At least one of them may be used, and preferably sapphire may be used.

A mask pattern 120 of silicon oxide (SiO 2; silicon oxide), silicon nitride (SiNx; silicon nitride) and silicon oxynitride; may comprise at least one of (SiON silicon oxynitride), it is preferably of silicon oxide Can be used.

FIGS. 2B and 2C are cross-sectional views in which gallium nitride is epitaxially lateral over-grown (ELOG) on a growth substrate and gallium nitride containing N-polar gallium nitride and Ga-polar gallium nitride is formed.

The gallium nitride 130 including the N-polar gallium nitride 131 and the Ga-polar gallium nitride 132 is grown by an epitaxial lateral overgrowth (ELOG) method.

The epitaxial lateral overgrowth ELOG can be grown not only in the vertical direction from the growth substrate 110 but also in the lateral direction over the mask pattern 120. [

First, as shown in FIG. 2B, the gallium nitride 130 is vertically grown through the window region 121 of the mask pattern 120. Thereafter, in the final stage of growth, the gallium nitride 130 can be grown in the lateral direction of the protruding region 122 of the mask pattern 120.

As a result, after the gallium nitride 130 grown in the lateral direction has grown for a predetermined time, the vertically grown gallium nitride 130 is merged to form the upper surface of the growth substrate 110 and the upper surface of the mask pattern 120, The entirely grown gallium nitride 130 may be formed.

The grown gallium nitride 130 is grown on the projected region 122 of the N-polar gallium nitride 131 and the mask pattern 120 grown on the window region 121 of the mask pattern 120, And may include gallium nitride (132).

Only the N-polar gallium nitride 131 is grown on the window region 121 and only the Ga-polar gallium nitride 132 is grown on the projected region 122 or the N-polar gallium nitride 131 and Ga- The polar gallium nitride 132 may be mixed and grown.

When the epitaxial lateral overgrowth (ELOG) of the gallium nitride 130 is performed on the mask pattern 120 including the window region 121 and the protruding region 122, the N-polarity gallium nitride 131 ) Or only one kind of Ga-polar gallium nitride 132 is grown over the entire region.

However, the method of manufacturing a gallium nitride substrate according to an embodiment of the present invention includes the steps of epitaxial lateral overgrowth (ELOG) of gallium nitride 130 on a mask pattern 120 including a window region 121 and a protrusion region 122, Polarity gallium nitride 131 is grown only on the window region 121 and only the Ga-polar gallium nitride 132 is grown on the protruding region 122 by using a specific condition inversion) property.

Each gallium atom of the gallium nitride 130 is tetrahedrally coordinated to four nitrogen atoms and has a Ga-polar gallium nitride 132 characteristic and an N-polar gallium nitride 131 characteristic depending on the direction.

The N-polarity gallium nitride 131 grown on the window region 121 may be a defect region having a higher defect ratio than the Ga-polar gallium nitride 132 grown on the protruding region 122 . Therefore, it is more preferable to use Ga-polar gallium nitride (132) rather than N-polar gallium nitride (131).

2D is a cross-sectional view in which N-polar gallium nitride is selectively etched.

Gallium nitride may exhibit different etching rates depending on the polarity. The Ga-polar gallium nitride 132 has an etching resistance to potassium hydroxide (KOH) relatively, while the N-polar gallium nitride 131 has a property of being easily etched into potassium hydroxide (KOH).

The N-polar gallium nitride 131 may be removed by wet etching using potassium hydroxide (KOH).

According to an embodiment, the N-polar gallium nitride 131 may be etched by a dry etching method using an additional mask, and the dry etching method may be RIE (Reactive Ion Etching), ECR (Electron Cyclotron Resonance) or ICP Coupled Plasma).

Accordingly, the method of manufacturing a gallium nitride substrate according to an embodiment of the present invention can selectively remove the N-polar gallium nitride 131 without using any additional mask by chemical etching using potassium hydroxide (KOH).

Accordingly, in the method of fabricating a gallium nitride substrate according to an embodiment of the present invention, only the N-polar gallium nitride 131 is selectively removed, so that only a Ga-polar gallium nitride 132 having a relatively small defect is grown on the growth substrate 110 It remains.

2E is a cross-sectional side view of Ga-polar gallium nitride.

The method of fabricating a gallium nitride substrate according to an embodiment of the present invention may further include the step of laterally growing Ga-polar gallium nitride 132 on the mask pattern 120 according to an embodiment.

The gallium nitride substrate 133 is formed by laterally growing the Ga-polar gallium nitride 132 on the mask pattern 120.

The Ga-polar gallium nitride 132 that is laterally grown on the mask pattern 120 does not contact the growth substrate 110. Since the Ga-polarized gallium nitride 132 grows very slowly or hardly in the lower direction if the growth is made much faster in the horizontal direction than in the vertical direction, the Ga-polarized gallium nitride 132 grows on the growth substrate 110, (G).

2F is a cross-sectional view of the gallium nitride substrate from which the mask pattern is removed.

The method of fabricating the gallium nitride substrate 133 according to an embodiment of the present invention may be such that if the step of laterally growing the Ga-polar gallium nitride 132 on the mask pattern 120 is not performed, A gallium nitride substrate may be manufactured and the step of laterally growing the Ga-polar gallium nitride 132 on the mask pattern 120 may be performed to form a gallium nitride substrate 133 in the form of a plate, Can be produced.

The mask pattern 120 may be removed by chemical etching and may be formed by wet etching using a mixed solution of any one or combination of one or more of hydrofluoric acid (HF) and buffered oxide etchant And preferably, hydrofluoric acid (HF) may be used.

The method of manufacturing a gallium nitride substrate 133 according to an embodiment of the present invention includes the steps of removing a gallium nitride substrate 133 from a substrate using a chemical etching process that does not require a sacrificial layer, Damage to the substrate 133 can be reduced, and the quality of the gallium nitride substrate 133 of high quality can be maintained.

Therefore, the method of manufacturing the gallium nitride substrate 133 according to an embodiment of the present invention can produce a high-quality free-standing gallium nitride substrate.

The gallium nitride substrate 133 may include a first surface that is a surface on which the growth substrate 110 is disposed and a second surface that faces the first surface.

When the gallium nitride substrate 133 is obtained, the gallium nitride substrate 133 is obtained such that the second surface is located on the upper surface and the first surface is located on the lower surface. In the gallium nitride substrate 133 according to an embodiment of the present invention, Since the gallium nitride is grown in the polar direction, the Ga-polar gallium nitride substrate 133 can be obtained.

However, when the gallium nitride substrate 133 is obtained, when the gallium nitride substrate 133 is obtained such that the first surface is located on the upper surface and the second surface is located on the lower surface, the gallium nitride substrate manufacturing method according to one embodiment of the present invention Polarity direction, and thus the N-polarity gallium nitride substrate 133 can be obtained.

Therefore, the method of fabricating a gallium nitride substrate according to an embodiment of the present invention can selectively utilize N-polarity and Ga-polarity along the upper and lower directions of the gallium nitride substrate 133.

In addition, the method of manufacturing a gallium nitride substrate according to an embodiment of the present invention reduces the defect ratio of the gallium nitride substrate by manufacturing the gallium nitride substrate 133 in which gallium nitride is grown in the Ga-polar direction with relatively few defects .

Also, the gallium nitride substrate manufactured using the gallium nitride substrate manufacturing method according to an embodiment of the present invention can be used for a display based on a light emitting device and a light emitting device.

Further, by fabricating a light emitting device using the gallium nitride substrate manufactured by the method of manufacturing a gallium nitride substrate according to an embodiment of the present invention, it is possible to manufacture a general light emitting device capable of replacing a luminescent lamp Can be utilized.

In order to manufacture the gallium nitride template substrate according to an embodiment of the present invention, the growth substrate 110 and the mask pattern 120 may not be removed.

2A to 2E, except that the growth substrate 110 and the mask pattern 120 are not removed, the method of manufacturing a gallium nitride template substrate according to an embodiment of the present invention is not limited thereto. The method of manufacturing the gallium nitride substrate according to the embodiment is the same as that of the method of manufacturing the gallium nitride substrate according to the embodiment.

2A to 2E, after completing the fabrication process, the growth substrate 110, the mask pattern 120, and the gallium nitride substrate 100. [ (133) are successively formed on the gallium nitride substrate.

In the method of manufacturing a gallium nitride template substrate according to an embodiment of the present invention, if the step of laterally growing the Ga-polar gallium nitride 132 on the mask pattern 120 is not performed, the opening area 121 is exposed A gallium nitride substrate can be manufactured and the step of laterally growing the Ga-polar gallium nitride 132 on the mask pattern 120 can be performed to produce a plate-shaped gallium nitride substrate 133 having no exposed region have.

FIG. 3 is a plan view showing Ga-polar gallium nitride formed on a growth substrate and a mask pattern in a method of manufacturing a gallium nitride substrate according to an embodiment of the present invention.

On the growth substrate 110, Ga-polar gallium nitride 132 is formed in a region except a window region 121 having a dot shape.

Accordingly, the growth substrate 110 is exposed in the window region 121 where the Ga-polar gallium nitride 132 is not formed.

Hereinafter, a method of manufacturing a gallium nitride substrate according to another embodiment of the present invention will be described with reference to FIGS. 4A to 4H.

The method of manufacturing a gallium nitride substrate according to another embodiment of the present invention is the same as that described with reference to FIGS. 2A to 2F except that a temporary substrate is used, so that redundant components will not be described.

4A to 4H are cross-sectional views illustrating a method of manufacturing a gallium nitride substrate according to another embodiment of the present invention.

A method of fabricating a gallium nitride substrate according to another embodiment of the present invention includes forming a mask pattern 220 including at least one window region 221 and a protrusion region 222 on a growth substrate 210, Epitaxial side overgrowth (ELOG) of gallium nitride (GaN) on the substrate 210 to form gallium nitride 230 including N-polar gallium nitride 231 and Ga-polar gallium nitride 232 And selectively etching the N-polar gallium nitride (231).

The step of removing the growth substrate 210 and the mask pattern 220, attaching the Ga-polar gallium nitride 232 on the temporary substrate 250, the step of growing the Ga-polar gallium nitride 232 to a lateral growth .

4A is a sectional view in which a mask pattern including at least one window region and a protruding region is formed on a growth substrate.

The mask pattern 220 may include a window region 221 and a protruding region 222 by a patterning process and then the gallium nitride 230 may be grown through the window region 221 of the mask pattern 220 have.

Preferably, the growth substrate 210 may be sapphire.

Preferably, the mask pattern 220 may be silicon oxide, and the window region 221 of the mask pattern 220 may have a dot shape, a rectangular shape, an elliptical shape, or a stripe shape. However, the present invention is not limited thereto.

FIGS. 4B and 4C are cross-sectional views illustrating epitaxial lateral overgrowth (ELOG) of gallium nitride on a growth substrate to form gallium nitride containing N-polar gallium nitride and Ga-polar gallium nitride.

The gallium nitride 230 including the N-polar gallium nitride 231 and the Ga-polar gallium nitride 232 may be grown by an epitaxial lateral overgrowth (ELOG) method.

First, as shown in FIG. 4B, the gallium nitride 230 is vertically grown through the window region 221 of the mask pattern 220. Thereafter, in the final stage of the growth, the gallium nitride 230 may be grown in the lateral direction of the protruding region 222 of the mask pattern 220.

4C, the gallium nitride 230 may be formed entirely on the upper surface of the growth substrate 210 and the mask pattern 220.

The grown gallium nitride 230 is grown on the projected region 222 of the N-polar gallium nitride 231 and the mask pattern 220 grown on the window region 221 of the mask pattern 220, And may include gallium nitride (132).

Only the N-polarized gallium nitride 231 is grown on the window region 221 and only the Ga-polarized gallium nitride 232 is grown on the projected region 222 or the N-polarized gallium nitride 231 and Ga- The polar gallium nitride 232 may be mixed and grown.

The N-polarity gallium nitride 231 grown on the window region 221 may be a defect region having a higher defect ratio than the Ga-polar gallium nitride 232 grown on the protruding region 222 . Therefore, it is more preferable to use Ga-polar gallium nitride 232 than the N-polarity gallium nitride 231.

4D is a cross-sectional view in which N-polar gallium nitride is selectively etched.

The N-polar gallium nitride 231 can be removed by wet etching using potassium hydroxide (KOH).

Gallium nitride differs in etching rate depending on the polarity. The Ga-polar gallium nitride 232 has an etching resistance to potassium hydroxide (KOH) relatively, while the N-polar gallium nitride 231 has a property of being easily etched into potassium hydroxide (KOH).

Accordingly, the method of manufacturing the gallium nitride substrate according to another embodiment of the present invention can selectively remove the N-polar gallium nitride 231 without using any additional mask by chemical etching using potassium hydroxide (KOH).

Therefore, in the method of manufacturing a gallium nitride substrate according to another embodiment of the present invention, only the N-polarity gallium nitride 231 is selectively removed to form a GaN-GaN layer 232 having relatively few defects on the growth substrate 210 It remains.

4E is a cross-sectional view in which the mask pattern is removed.

The mask pattern may be removed from the Ga-polar gallium nitride 232 through chemical etching and may be a mixed solution of any one or combination of hydrofluoric acid (HF) and buffered oxide etchant , And preferably hydrofluoric acid (HF) may be used.

The method of fabricating a gallium nitride substrate according to another embodiment of the present invention includes removing the growth substrate from the Ga-polar gallium nitride 232 using a chemical etching process that does not require a sacrificial layer, So that the characteristics of the gallium nitride substrate of high quality can be maintained.

4F is a cross-sectional view showing that Ga-polar gallium nitride is deposited on a temporary substrate.

A free-standing gallium nitride 232 containing Ga-polar gallium nitride 232 is deposited on the temporary substrate 250 to laterally grow the Ga-polar gallium nitride 232.

The temporary substrate 250 may include at least one of sapphire, gallium arsenide (GaAs), spinel, silicon (Si), indium phosphide (InP), or silicon carbide A template in which an auxiliary layer 252 of an amorphous thin film containing silicon oxide (SiOx) or silicon nitride (SiNx) is deposited on the substrate 251 may be used.

4G is a cross-sectional view of free-standing gallium nitride grown laterally.

A gallium nitride substrate 233 is formed by laterally growing a free-standing gallium nitride 232 adhered on a temporary substrate 250 on which an amorphous thin film is deposited.

4H is a cross-sectional view of the gallium nitride substrate on which the temporary substrate is separated.

The method of manufacturing a gallium nitride substrate according to another embodiment of the present invention may further include separating the grown gallium nitride substrate on the temporary substrate.

Accordingly, the method of manufacturing a gallium nitride substrate according to another embodiment of the present invention can produce a high-quality free-standing gallium nitride substrate.

The method of manufacturing a gallium nitride substrate according to another embodiment of the present invention can selectively utilize N-polarity and Ga-polarity depending on the upper and lower directions of the gallium nitride substrate 233.

In addition, the method of manufacturing a gallium nitride substrate according to another embodiment of the present invention can reduce the defect ratio of the gallium nitride substrate by manufacturing the gallium nitride substrate 233 by growing gallium nitride in a Ga-polar direction with relatively few defects .

5 is a plan view showing Ga-polar gallium nitride after removing a growth substrate and a mask pattern in a method of manufacturing a gallium nitride substrate according to another embodiment of the present invention.

The Ga-polar gallium nitride 232 includes a dot-shaped opening corresponding to the window region 221.

However, in FIG. 5, unlike FIG. 3, the growth substrate 110 is not present in the window region 121 where the Ga-polar gallium nitride 232 is not formed.

While the invention has been shown and described with reference to certain preferred embodiments thereof, it will be understood by those of ordinary skill in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention as defined by the appended claims. This is possible.

Therefore, the scope of the present invention should not be limited to the described embodiments, but should be determined by the equivalents of the claims, as well as the claims.

10: Ga-polarity (+ c) 20: N-polarity (-c)
G; Gap 110: growth substrate
120, 220: mask pattern 121, 221: window area
122, 222, 322, 422: protruding regions 130, 230: gallium nitride
131, 231: N-polar gallium nitride 132, 232: Ga-polar gallium nitride
133, 233: gallium nitride substrate 210: growth substrate
250: temporary substrate 251: substrate
252: auxiliary layer

Claims (8)

Forming a mask pattern including at least one window region and a protruding region on a growth substrate;
Forming an epitaxial lateral overgrowth (ELOG) on gallium nitride (GaN) on the growth substrate to form gallium nitride including N-polar gallium nitride and Ga-polar gallium nitride;
Selectively etching the N-polar gallium nitride; And
Removing the mask pattern
Lt; / RTI >
Wherein the step of forming gallium nitride including N-polar gallium nitride and Ga-polar gallium nitride comprises growing only the N-polar gallium nitride on the window region using polarity inversion, Wherein only the Ga-polar gallium nitride is grown.
delete The method according to claim 1,
Wherein the step of selectively etching the N-polar gallium nitride comprises:
Growing the Ga-polarized gallium nitride on the side
Wherein the gallium nitride substrate is a silicon nitride substrate.
The method according to claim 1,
The step of selectively etching the N-polar gallium nitride may include:
Wherein potassium hydroxide (KOH) is used.
The method according to claim 1,
The growth substrate may be at least one of sapphire, gallium arsenide (GaAs), spinel, silicon, indium phosphide (InP) and silicon carbide (SiC). Wherein the gallium nitride substrate is a silicon nitride substrate.
The method according to claim 1,
The mask pattern of silicon oxide (SiO 2; silicon oxide), silicon nitride (SiNx; silicon nitride) and silicon oxynitride (SiON; silicon oxynitride) at least one gallium nitride-substrate manufacturing method characterized in that it comprises one of the.
Forming a mask pattern including at least one window region and a protruding region on a growth substrate;
Forming an epitaxial lateral overgrowth (ELOG) on gallium nitride (GaN) on the growth substrate to form gallium nitride including N-polar gallium nitride and Ga-polar gallium nitride;
Selectively etching the N-polar gallium nitride;
Removing the mask pattern;
Attaching a free-standing gallium nitride containing Ga-polar gallium nitride on a temporary substrate on which an amorphous thin film is deposited; And
Growing the free-standing gallium nitride adhered on the temporary substrate on which the amorphous thin film is deposited,
Lt; / RTI >
Wherein the step of forming gallium nitride including N-polar gallium nitride and Ga-polar gallium nitride comprises growing only the N-polar gallium nitride on the window region using polarity inversion, Wherein only the Ga-polar gallium nitride is grown.
Forming a mask pattern including at least one window region and a protruding region on a growth substrate;
Forming an epitaxial lateral overgrowth (ELOG) on gallium nitride (GaN) on the growth substrate to form gallium nitride including N-polar gallium nitride and Ga-polar gallium nitride; And
Selectively etching the N-polar gallium nitride
Lt; / RTI >
Wherein the step of forming gallium nitride including N-polar gallium nitride and Ga-polar gallium nitride comprises growing only the N-polar gallium nitride on the window region using polarity inversion, Wherein only the Ga-polar gallium nitride is grown on the GaN substrate.
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