KR101912772B1 - Apparatus and method for producing photovoltaic element - Google Patents

Abstract

An apparatus for manufacturing a photovoltaic device according to the present invention includes: a first heating unit for heating a wafer to a heating temperature or more; A cooling unit for cooling the wafer that has passed through the first heating unit to a cooling temperature or less; A second heating unit for reheating the wafer passed through the cooling unit to a temperature higher than the holding temperature; A holding unit for holding the wafer that has passed through the second heating unit at the holding temperature for a preset time; And an illumination unit disposed in the holding unit or disposed at a rear end of the holding unit, for illuminating the wafer at an illumination temperature or higher.

Description

[0001] APPARATUS AND METHOD FOR PRODUCING PHOTOVOLTAIC ELEMENT [0002]

The present invention relates to an apparatus and a method for manufacturing a photovoltaic device.

Photovoltaic elements such as solar cells can convert light into current. For example, a pair of spatially separated charge carriers at the pn junction between the emitter region and the base region must be supplied to the external current circuit with the aid of the solar cell's electrical contacts.

Solar cells are mainly based on silicon as a semiconductor substrate material. The silicon substrate may be provided in the form of a single crystal or a polycrystalline wafer. A solar cell produced on the basis of a crystalline silicon wafer may suffer a remarkable efficiency loss of 1% or more due to a degradation effect of reducing the efficiency of the solar cell.

Korean Patent Laid-Open Publication No. 10-2012-0032193 discloses an in-line furnace device for emitter diffusion.

Korean Patent Publication No. 10-2012-0032193

The present invention provides an apparatus for manufacturing a photovoltaic device that is easy to maintain and has improved efficiency and safety of a silicon substrate.

It is to be understood that both the foregoing general description and the following detailed description are exemplary and explanatory and are not intended to limit the invention to the precise forms disclosed. Other objects, which will be apparent to those skilled in the art, It will be possible.

An apparatus for manufacturing a photovoltaic device according to the present invention includes: a first heating unit for heating a wafer to a heating temperature or more; A cooling unit for cooling the wafer that has passed through the first heating unit to a cooling temperature or less; A second heating unit for reheating the wafer passed through the cooling unit to a temperature higher than the holding temperature; A holding unit for holding the wafer that has passed through the second heating unit at the holding temperature for a preset time; And an illumination unit disposed in the holding unit or disposed at a rear end of the holding unit, for illuminating the wafer at an illumination temperature or higher.

A method of manufacturing a photovoltaic device according to the present invention includes a first heating step of heating a wafer on which aluminum and silver are stacked in order on a surface of a P-type silicon substrate at a heating temperature or higher; A cooling step of cooling the wafer heated above the heating temperature to a cooling temperature or lower; A second heating step of reheating the wafer cooled below the cooling temperature to a temperature higher than the holding temperature; And holding the wafer reheated to a temperature higher than the holding temperature at the holding temperature for a set time.

In the photovoltaic element manufacturing apparatus of the present invention, since the annealing process of the wafer is performed in two steps, the damage to the wafer lattice can be surely removed.

In addition, in the firing process for the annealing process, the efficiency of the solar cell is lowered because boron is combined with oxygen rather than the wafer. The efficiency of the solar cell can be improved by the holding portion and the illumination portion of the present invention have.

In addition, since the elements of the photovoltaic device manufacturing apparatus according to the present invention are modularized, the maintenance thereof is easy and can be adaptively applied to various manufacturing environments.

1 is a schematic view showing an apparatus for manufacturing a photovoltaic device of the present invention.
Figure 2 is a schematic plan view of a first chamber module, a second chamber module and a relay module of the present invention.
3 is a flowchart illustrating a method of manufacturing a photovoltaic device according to the present invention.
4 is a cross-sectional view of the wafer.
5 is a schematic view showing another apparatus for manufacturing a photovoltaic device according to the present invention.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. The sizes and shapes of the components shown in the drawings may be exaggerated for clarity and convenience. In addition, terms defined in consideration of the configuration and operation of the present invention may be changed according to the intention or custom of the user, the operator. Definitions of these terms should be based on the content of this specification.

The solar cell can be manufactured on the P-type silicon wafer 90 through the following process.

First, a texturing process for removing damage and contamination on the surface of the wafer 90 produced by cutting the silicon ingot can be performed.

The textured wafer 90 may undergo an emitter diffusion process for N doping.

The N-doped wafer 90 may be subjected to an edge isolation process to remove N doping at the edge of the wafer 90 to electrically isolate the front and back surfaces of the wafer 90.

The edge-isolated wafer 90 may be subjected to an anti-reflection coating process that prevents the solar cell from reflecting sunlight.

In the next step, silver and aluminum may be screen printed on the front and back surfaces of the wafer 90 to form an electrode.

The wafer 90 completed to the Screen Print process can be completed with a solar cell by annealing the wafer 90 through a firing process.

In the case of an ion implantation process in a shearing process (such as Emitter Diffusion, Anti Reflection Coatings, etc.), ions implanted into the wafer 90 hit the crystal atoms of the wafer 90, causing crystal defects. Therefore, an annealing process for recovering damaged crystal defects is required, and the firing process may correspond to the annealing process.

The photovoltaic device manufacturing apparatus of the present invention may be for a Firing process.

The solar cell may be a PN junction semiconductor in which a P-type semiconductor and an N-type semiconductor are bonded. In order to form the PN junction, phosphorus (P) or the like is implanted into the P-type semiconductor type silicon doped with boron to form the N-type semiconductor 92 region. The solar absorption capacity of a solar cell is affected by a minority carrier. Sunlight is absorbed by the minority carrier and converted into electromotive force. In the solar cell, boron bonded to silicon in the region of the N-type semiconductor 92 may be a minority carrier. However, when such boron is combined with oxygen of silicon, the minority carriers can be reduced, and the solar light absorption efficiency of the solar cell can be lowered.

The P-type silicon wafer 90 doped with boron may be produced by melting a polycrystalline polysilicon into a quartz crucible to produce a monocrystalline silicon ingot, and then cutting the ingot. The P-type silicon wafer 90 thus formed may contain excessive oxygen as an impurity, and may cause a phenomenon of photo-thermal degradation that does not maintain initial efficiency after light irradiation. Oxygen bonded to silicon reacts with boron over a certain period of time after light irradiation, resulting in a decrease in the efficiency of photovoltaic cells due to the reduction of minority carriers.

Even if the photovoltaic efficiency is lowered, annealing including heating of the wafer 90 is necessarily required even for forming the electrodes. According to the present invention, a method of preventing boron from bonding with oxygen in the wafer 90 and inducing boron to bond with silicon may be further provided.

Fig. 1 is a schematic view showing an apparatus for manufacturing a photovoltaic device of the present invention, and Fig. 4 is a sectional view of a wafer 90. Fig. 5 is a schematic view showing another apparatus for manufacturing a photovoltaic device according to the present invention.

1 may include a first heating unit 110, a cooling unit 130, a second heating unit 210, a holding unit 230, and an illumination unit 250. The photovoltaic device manufacturing apparatus shown in FIG.

The first heating unit 110 can heat the wafer 90 to a heating temperature h or higher. The heating temperature h may be 600 ° C to modify the properties of the silicon wafer 90.

Meanwhile, in the heating process of the first heating unit 110, an electrode or a pattern for transmitting electricity generated from solar light to the outside may be formed on the wafer 90.

The wafer 90, which is input to the first heating unit 110, may be laminated with aluminum or silver, which is an electrode of a solar cell or a conductive pattern of electricity later.

The wafer 90 may be formed by sequentially stacking aluminum (Al) and silver (Ag) on one surface of a P-type silicon substrate 91. Aluminum may be stacked on one surface of the P-type silicon substrate 91, and silver may be stacked on the aluminum. A first layer 97 made of aluminum (Al) and a second layer 96 made of silver (Ag) may be laminated on one surface of the wafer 90 in this order.

An N-type semiconductor 92 is formed on the other surface of the P-type silicon substrate 91, an oxide film 93 is formed on the N-type semiconductor 92 to be absorbed without reflection of sunlight, and an electrode layer 95 may be provided. The electrode layer may include silver (Ag).

When the wafer 90 is heated by the first heating unit 110, the silver of the second layer 96 penetrates the first layer 97 having a low melting point and enters the wafer 90, specifically, the P-type silicon substrate 91 ). ≪ / RTI > Silver contacting the P-type silicon substrate 91 may be a first electrode for transferring electricity to the outside. Similarly, when the wafer 90 is heated by the first heating unit 110, silver deposited on the oxide film 93 penetrates the oxide film 93 and enters the wafer 90, specifically, the N-type semiconductor 92 Can be contacted. Silver contacting the N-type semiconductor 92 may be a second electrode for transferring electricity to the outside. The setting condition may include a period after the silver contacts the wafer 90 and the like.

The heating of the first heating part 110 may penetrate the oxide film 93 or the aluminum layer having a melting point lower than that of the silver solder heated to the heating temperature h or more and may be contacted to the wafer 90. At this time, it is preferable that the aluminum and the oxide film 93 harden at the initial stage when silver contacts the wafer 90. This is because the aluminum contacted to the wafer 90 can move along the surface of the wafer 90 if the aluminum and the oxide film 93 are not firmly solidified and stained after the silver contact with the wafer 90 Because. When the silver moves along the surface of the wafer 90, the initial position of the silver corresponding to the electrode or the pattern may be changed.

When the wafer 90 heated to the heating temperature h or more by the first heating unit 110 is naturally cooled as in (2), the oxide film 93 and the aluminum layer are kept in a state of stagnation for a long time. There arises a problem that the position of the silver corresponding to the electrode is changed.

The cooling unit 130 can be used so that the electrode is accurately formed at the set position.

The cooling unit 130 can cool the wafer 90 that has passed through the first heating unit 110 to the cooling temperature c or less. The cooling temperature c at this time may be 60 DEG C or less. The cooling unit 130 can force the wafer 90 to rapidly cool the wafer 90 as shown in (1) so that the set conditions for the silver to penetrate are satisfied.

For example, the cooling unit 130 may include a discharging means 133 for discharging the cooling gas. The cooling gas discharged from the discharging means 133 can rapidly cool the wafer 90 heated to the heating temperature or higher. However, a post-treatment process is required to discharge the cooling gas existing in the chamber module provided with the cooling unit 130. [

As another example, the cooling section 130 may include a cooling pipe 131 through which cooling water flows.

The apparatus for manufacturing a photovoltaic device of the present invention includes a heating space 18 in which a first heating unit 110 is installed and a cooling space 19 in which a cooling unit 130 is installed, 1 chamber module 10 as shown in FIG. The cooling unit 130 may be installed in the first chamber module 10 together with the first heating unit 110 so that the wafer 90 heated to a heating temperature or more is rapidly cooled rapidly.

At this time, a partition wall 170 made of a heat insulating material may be provided between the heating space 18 and the cooling space 19 in order to distinguish two spaces having different characteristics.

At this time, the cooling unit 130 is installed on at least one of the inner wall of the first chamber module 10 facing the cooling space 19 and the one face of the partition wall 170 facing the cooling space 19, And may include a tube 131. As the cooling space 19 is cooled by the cooling pipe 131, the wafer 90 passing through the cooling space 19 can be rapidly cooled.

The first layer 97 or the second layer 96 stacked on the wafer 90 input to the first heating unit 110 may be coated in a paste state. At this time, a binder for bonding may be included in the paste so that the bonded state to the wafer 90 is maintained. Since the binder functions as an unnecessary impurity after the photovoltaic device corresponding to the solar cell is completed, it is preferable to remove the binder.

The first heating unit 110 may maintain the wafer 90 at a predetermined burn-out temperature b for a predetermined time so that the binder is evaporated.

The burnout period in which the burnout temperature b is maintained may be formed before or after the maximum heating temperature of the wafer 90. The burnout period may last for at least 10 seconds.

The first heating unit 110 includes a first heating unit 111 for heating the wafer 90 to a set temperature equal to or higher than the heating temperature and a second heating unit 113 for heating and holding the wafer 90 at the burnout temperature . The second heating means 113 may be disposed in front of or behind the first heating means 111 on the flow of the wafer 90.

As described above, according to the first heating unit 110 and the cooling unit 130, the wafer 90 can be annealed. The damage caused to the lattice of the semiconductor by annealing can be largely eliminated,

However, since still remaining damage exists, a regeneration process can be performed by the second heating unit 210 to further increase the efficiency of the solar cell.

The second heating unit 210 may perform a regeneration process by reheating the wafer 90 having passed through the cooling unit 130 to a temperature equal to or higher than the holding temperature s.

The second heating unit 210 may reheat the wafer 90 to a temperature lower than the heating temperature to perform the regeneration process. At this time, the second heating part 210 can reheat the wafer 90 cooled to the cooling temperature c or less, and the holding temperature s can be 200 ° C to 300 ° C.

The number of minority carriers present in the wafer 90 is increased by the regenerating process, and thus the photovoltaic efficiency of the photovoltaic device can be improved. For example, light induced degradation (LID) phenomenon may occur in a photovoltaic device, which may lower the photoelectric efficiency. A regeneration process that maintains the wafer 90 at a holding temperature between 200 [deg.] C and 300 [deg.] C for at least 10 seconds can repair or compensate for the photoelectric efficiency degradation due to the LID phenomenon.

In order to increase the number of excess minority carriers, the holding part 230 may maintain the wafer 90 passing through the second heating part 210 at a holding temperature for a preset time. In one example, the holding portion 230 can maintain the wafer 90 at a holding temperature between 200 [deg.] C and 300 [deg.] C for at least 10 seconds or more.

It is necessary to prevent the combination of boron and oxygen in order to increase the number of excess minority charge carriers. Hydrogen may be introduced into the wafer 90 to prevent bonding with oxygen. The wafer 90 may include hydrogenated silicon for the introduction of hydrogen. The hydrogen in the silicon layer may be introduced into the P-type silicon substrate 91 or the N-type semiconductor 92 by heating the first heating portion 110 or the second heating portion 210. [ Thereafter, the means provided to prevent leakage of the introduced hydrogen may be the holding portion 230.

If the wafer 90 is held at the holding temperature for the set time by the holding portion 230, the outflow of hydrogen is prevented, and consequently the number of minority carriers can be increased.

The first heating part 110, the second heating part 210, and the holding part 230 may include a rod-shaped lamp or a heating wire that generates heat by power supply.

The illumination unit 250 may be used to smoothly couple boron and the silicon substrate.

The illumination unit 250 may be disposed at the holding unit 230 or at the rear end of the holding unit 230 and may illuminate the wafer 90 at an illumination temperature i or higher. At this time, the illumination temperature i may be 90 DEG C or higher.

The illumination unit 250 can illuminate light in a wavelength band having an energy equal to or greater than an energy band gap of silicon, thereby bonding boron and silicon and securing a small number of carriers. During the firing process, a minority carrier regeneration voltage may be formed on the silicon wafer 90 through irradiation of light of a specific wavelength range through the illumination unit 250 to induce bonding of boron and silicon. The minority carrier regeneration voltage may refer to a voltage generated in the silicon wafer 90 when light having a wavelength greater than the energy band gap of the silicon wafer 90 is irradiated.

The illumination unit 250 may be for securing a minority carrier on the side of the N-type semiconductor 92 constituting the wafer 90. The side of the N-type semiconductor 92 may be the upper surface of the wafer 90 that is placed on the conveyor belt and conveyed. The illumination portion 250 may be disposed above the conveyor belt to illuminate the top surface of the wafer 90.

The illumination unit 250 may be a lamp or an LED light source. When the illumination unit 250 is fabricated as an LED light source, the wavelength band of light can be easily set.

5, the first heating unit 110, the cooling unit 130, the second heating unit 210, the holding unit 230, and the illumination unit 250 may be formed as one continuous chamber unit (Not shown). The chamber unit 300 can form a continuous furnace.

The first heating unit 110, the cooling unit 130, the second heating unit 210, the holding unit 230, and the illuminating unit 250 may be configured as shown in FIG. 1 The chamber modules 10 and 20 can be installed separately. The plurality of chamber modules 10, 20 may include a first chamber module 10 and a second chamber module 20.

In the first chamber module 10, a heating and cooling process may be performed, and in the second chamber module 20, a regeneration process may be performed.

According to the photovoltaic device manufacturing apparatus of the present invention, the wafer 90 can be cooled to a cooling temperature c or lower or a room temperature by the cooling unit 130. Further, the wafer 90 can be reheated to a temperature higher than the holding temperature by the second heating unit 210. [ Since the room temperature section exists between the cooling section 130 and the second heating section 210, the elements constituting the apparatus for manufacturing a photovoltaic device of the present invention may be divided into a plurality of chamber modules.

As an example, the photovoltaic device fabrication apparatus of the present invention may include a first chamber module 10 and a second chamber module 20 through which the wafer 90 passes.

The first heating unit 110 and the cooling unit 130 may be installed in the first chamber module 10.

The second heating unit 210 and the holding unit 230 may be installed in the second chamber module 20. The illumination unit 250 may also be installed in the second chamber module 20.

The first chamber module 10 and the second chamber module 20 may be spaced apart from each other by a predetermined distance L across the atmospheric environment. At this time, L may be at least 10 cm or more. The wafer may be cooled to below 60 < 0 > C in an atmospheric environment located between the cooling section and the second heating section.

The first chamber module 10 may be provided with a first conveyor belt 11 for conveying the wafer 90. The second chamber module 10 may be provided with a second conveyor belt 21 for conveying the wafer 90.

The wafer 90 output from the first chamber module outlet 15 provided at the output end of the first chamber module 10 can be input to the second chamber module inlet 25 provided at the input end of the second chamber module 10 have. The wafer 90 that has undergone the cooling step in the first chamber module 10 can be transferred to the second chamber module 20 through the first chamber module outlet 15. The wafer 90 received through the second chamber module inlet 25 may undergo a regenerating process in the second chamber module 20. [ The regeneration process may include a reheating process by the second heating unit 210, a holding process by the holding unit 230, and an illumination process by the illumination unit 250.

The wafer 90 output from the first chamber module 10 can be input to the second chamber module 20 after passing through the atmospheric environment. Even after the wafer 90 is output from the first chamber module 10, it may be stored for a certain period of time and then input to the second chamber module 20. According to the present embodiment, since the first chamber module 10 and the second chamber module 20 are spaced apart from each other, maintenance is easier compared with the integral chamber. Also, even if the first chamber module 10 is changed to another type, the second chamber module 20 can be used as it is. Conversely, even if the second chamber module 20 is changed to another type, the first chamber module 10 can be used as it is.

2 is a schematic plan view showing a first chamber module 10, a second chamber module 20 and a relay module 30 of the present invention.

A separate means for inputting the wafer 90 output from the first chamber module 10 back to the second chamber module 20 when the first chamber module 10 and the second chamber module 20 are spaced apart Can be provided.

For example, the photovoltaic device fabrication apparatus of the present invention may include a relay module 30 interposed between the first chamber module 10 and the second chamber module 20. At this time, the first chamber module 10 and the second chamber module 20 may be detachably connected to the relay module 30.

According to the present embodiment, the first chamber module 10 or the second chamber module 20 of various kinds can be connected to each other with the relay module 30 therebetween.

A plurality of first chamber modules 10 or a plurality of second chamber modules 20 may be connected to the relay module 30.

The relay module 30 may divide the wafer 90 output from one first chamber module 10 into a plurality of second chamber modules 20 and input the wafer 90 as shown in FIG. This embodiment is suitable when the processing speed of the wafer 90 of the first chamber module 10 is high while the processing speed of the wafer 90 of the second chamber module 20 is slow.

The relay module 30 can input the wafer 90 output from the plurality of first chamber modules 10 to one second chamber module 20 as shown in FIG. This embodiment is suitable when the second chamber module 20 is faster in processing the wafer 90 than the processing speed of the wafer 90 in the first chamber module 10.

3 is a flowchart illustrating a method of manufacturing a photovoltaic device according to the present invention.

The method of manufacturing the photovoltaic device of the present invention may include a first heating step (S 510), a cooling step (S 520), a second heating step (S 530), and a maintaining step (S 540).

In the first heating step (S 510), the wafer (90) on which aluminum and silver are stacked in order on one side of the P-type silicon substrate (91) can be heated to a heating temperature or higher. The first heating step may be performed by the first heating part 110.

Through the first heating step (S 510), electrodes are normally formed on the wafer (90), and the coarse structure of the wafer (90) can be modified into a dense structure. In addition, hydrogen of silicon can be introduced into the wafer 90.

The wafer 90 may be laminated with a paste containing aluminum and silver as binders. The first heating step may include evaporating the binder while maintaining the wafer 90 at a predetermined burnout temperature for a predetermined period of time.

The cooling step (S 520) can cool the wafer (90) heated above the heating temperature to below the cooling temperature. The cooling step may be performed by the cooling unit 130.

The electrode of the wafer 90 can be placed in the permissible position and the outflow of hydrogen introduced into the wafer 90 can be partially prevented while the cooling section 130 is forcedly cooled.

The wafer 90 can be annealed through the first heating step and the cooling step.

The second heating step (S 530) may reheat the wafer 90 cooled below the cooling temperature to a temperature above the holding temperature. The second heating step may be performed by the second heating part 210.

The holding step (S 540) can maintain the wafer (90) reheated above the holding temperature at the holding temperature for the set time. The holding step may be performed by the holding unit 230.

During the holding step, the release of hydrogen introduced into the wafer 90 is prevented, so that the bonding of boron and oxygen can be prevented and the number of minority carriers can be increased. The electric energy generating efficiency of the photovoltaic device manufactured by the present manufacturing method can be improved as the number of minority carriers increases.

The illumination step S 550 can illuminate the wafer 90 through the holding part 230 at an illumination temperature or higher. The illumination step may be performed by the illumination unit 250.

Through the illumination step, boron can be reliably bonded to the P-type silicon substrate or the N-type semiconductor 92.

The wafer may be cooled to below 60 캜 between the cooling section and the second heating section. The wafer cooled to 60 ° C or lower can be regenerated through the second heating part, the holding part, and the illumination part.

The second heating unit 210, the holding unit 230, and the illumination unit 250 may be a single unit that emits heat and light. For example, a lamp or an LED light source that emits heat and light can perform both functions of the second heating unit 210, the holding unit 230, and the illumination unit 250.

The holding unit 230 may be a controller for controlling the on / off timing of the second heating unit 210. The second heating part 210 may perform the second heating step and the maintenance step under the control of the holding part 230. [ At this time, the second heating step and the holding step may be performed with a time difference for a plurality of wafers or single wafers adjacent to each other.

While the invention has been shown and described with reference to certain preferred embodiments thereof, it will be understood by those skilled in the art that various changes and modifications may be made without departing from the spirit and scope of the invention as defined by the appended claims. Accordingly, the true scope of the present invention should be determined by the following claims.

10 ... first chamber module 11 ... first conveyor belt
15 ... first chamber module outlet 18 ... heating space
19 ... cooling space 20 ... second chamber module
21 ... second conveyor belt 25 ... second chamber module inlet
30 ... relay module 90 ... wafer
91 ... P-type silicon substrate 92 ... N-type semiconductor
93 ... oxide film 95 ... electrode layer
96 ... second layer 97 ... first layer
110 ... first heating portion 111 ... first heating means
113 ... second heating means 130 ... cooling section
131 ... cooling pipe 133 ... discharging means
170 ... partition wall 210 ... second heating portion
230 ... holding part 250 ... illumination part
300 ... chamber unit

Claims (16)

A first heating unit for heating the wafer to a heating temperature or more;
A cooling unit for cooling the wafer that has passed through the first heating unit to a cooling temperature or less;
A second heating unit for reheating the wafer passed through the cooling unit to a temperature higher than the holding temperature;
A holding unit for holding the wafer that has passed through the second heating unit at the holding temperature for a preset time;
An illumination unit disposed in the holding unit or disposed at a rear end of the holding unit, for illuminating the wafer; / RTI >
The heating temperature of the first heating portion is 600 DEG C,
The cooling temperature of the cooling section is 60 DEG C or less,
The holding temperature of the holding part is 200 to 300 DEG C,
The illumination temperature of the illumination unit is 90 DEG C or higher,
The second heating unit reheats the wafer to a temperature lower than the heating temperature,
The wafer is annealed by the first heating part and the cooling part,
The wafer is cooled to a temperature of 60 DEG C or lower between the cooling section and the second heating section,
The wafer cooled to 60 ° C or lower is regenerated while passing through the second heating unit, the holding unit, and the illumination unit,
A first chamber module and a second chamber module through which the wafer passes,
The first heating unit and the cooling unit are installed in the first chamber module,
The second heating part and the holding part are installed in the second chamber module,
Wherein the first chamber module and the second chamber module are spaced apart from each other by an atmospheric environment,
Wherein the wafer is cooled to 60 DEG C or less in the atmospheric environment located between the cooling section and the second heating section,
A temperature for cooling the wafer at a temperature lower than the cooling temperature in the cooling section, and a temperature for cooling the wafer at a temperature lower than the cooling temperature in the cooling section, For four temperatures,
The temperature of the wafer at the first chamber module outlet corresponding to the outlet of the first chamber module is lower than the heating temperature and lower than the holding temperature,
The temperature of the wafer at the second chamber module inlet corresponding to the inlet of the second chamber module is lower than the heating temperature and lower than the holding temperature,
Wherein the wafer is reheated in the second chamber module to the holding temperature after passing through the second chamber module inlet.
delete The method according to claim 1,
A paste containing a binder is applied to the wafer input to the first heating unit,
Wherein the first heating unit maintains the wafer at a predetermined burnout temperature for a predetermined time so that the binder is evaporated.
The method according to claim 1,
A first layer of aluminum material and a second layer of silver material are stacked in this order on one side of the wafer,
Wherein the heating of the first heating portion causes the silver of the second layer to penetrate the first layer and contact the wafer,
Wherein the cooling unit forcibly cools the wafer at an initial stage when the silver contacts the wafer.
delete delete The method according to claim 1,
Wherein the holding unit holds the wafer at the holding temperature between 200 [deg.] C and 300 [deg.] C for at least 10 seconds or more.
The method according to claim 1,
Wherein the first chamber module is formed with a heating space in which the first heating unit is installed and a cooling space in which the cooling unit is installed,
A partition wall of an insulating material is provided between the heating space and the cooling space,
Wherein the cooling unit includes a cooling pipe installed in at least one of the inner wall of the first chamber module facing the cooling space and the one face of the partition facing the cooling space.
delete delete The method according to claim 1,
And a relay module interposed between the first chamber module and the second chamber module,
Wherein the first heating unit and the cooling unit are installed in the first chamber module,
The second heating part and the holding part are installed in the second chamber module,
Wherein the first chamber module and the second chamber module are detachably connected to the relay module.
12. The method of claim 11,
A plurality of the first chamber modules or a plurality of the second chamber modules are connected to the relay module,
Wherein the relay module inputs the wafer output from the plurality of first chamber modules to one of the second chamber modules or distributes the wafer output from one of the first chamber modules to a plurality of the second chamber modules And the photovoltaic device is manufactured.
The method according to claim 1,
Wherein the illumination unit illuminates the wafer with light having a wavelength band having energy greater than or equal to an energy band gap of silicon, thereby bonding boron and silicon and securing a minority carrier on the wafer.
delete delete delete

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