CN112768372A - Sintering equipment - Google Patents

Sintering equipment Download PDF

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Publication number
CN112768372A
CN112768372A CN202011059510.8A CN202011059510A CN112768372A CN 112768372 A CN112768372 A CN 112768372A CN 202011059510 A CN202011059510 A CN 202011059510A CN 112768372 A CN112768372 A CN 112768372A
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CN
China
Prior art keywords
cooling
heat exchanger
section
photovoltaic device
sintering
Prior art date
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Pending
Application number
CN202011059510.8A
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Chinese (zh)
Inventor
闫升虎
苏文华
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Illinois Tool Works Inc
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Illinois Tool Works Inc
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Filing date
Publication date
Application filed by Illinois Tool Works Inc filed Critical Illinois Tool Works Inc
Priority to TW109135468A priority Critical patent/TW202123486A/en
Priority to PCT/US2020/058825 priority patent/WO2021091971A1/en
Publication of CN112768372A publication Critical patent/CN112768372A/en
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1876—Particular processes or apparatus for batch treatment of the devices
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27—FURNACES; KILNS; OVENS; RETORTS
    • F27B—FURNACES, KILNS, OVENS, OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
    • F27B9/00—Furnaces through which the charge is moved mechanically, e.g. of tunnel type; Similar furnaces in which the charge moves by gravity
    • F27B9/14—Furnaces through which the charge is moved mechanically, e.g. of tunnel type; Similar furnaces in which the charge moves by gravity characterised by the path of the charge during treatment; characterised by the means by which the charge is moved during treatment
    • F27B9/20—Furnaces through which the charge is moved mechanically, e.g. of tunnel type; Similar furnaces in which the charge moves by gravity characterised by the path of the charge during treatment; characterised by the means by which the charge is moved during treatment the charge moving in a substantially straight path tunnel furnace
    • F27B9/24—Furnaces through which the charge is moved mechanically, e.g. of tunnel type; Similar furnaces in which the charge moves by gravity characterised by the path of the charge during treatment; characterised by the means by which the charge is moved during treatment the charge moving in a substantially straight path tunnel furnace being carried by a conveyor
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27—FURNACES; KILNS; OVENS; RETORTS
    • F27D—DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS, OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
    • F27D9/00—Cooling of furnaces or of charges therein
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
    • H01L21/67173—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers in-line arrangement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/6776—Continuous loading and unloading into and out of a processing chamber, e.g. transporting belts within processing chambers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
    • H01L31/1864—Annealing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
    • H01L31/1868—Passivation
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27—FURNACES; KILNS; OVENS; RETORTS
    • F27D—DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS, OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
    • F27D9/00—Cooling of furnaces or of charges therein
    • F27D2009/0002—Cooling of furnaces
    • F27D2009/0005—Cooling of furnaces the cooling medium being a gas
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Abstract

The application provides a sintering equipment for processing photovoltaic device includes: the photovoltaic device comprises a sintering section (102), a light processing section (104) and a cooling section (103), wherein the cooling section (104) is arranged between the sintering section (102) and the light processing section (104) and is used for cooling the photovoltaic device after sintering processing to the temperature required by light processing; the cooling section (103) comprises a first cooling sub-section (112) and a second cooling sub-section (113), wherein the first cooling sub-section (112) is connected to the sintering section (102), the first cooling sub-section (112) is configured to radiatively cool the photovoltaic device, and the second cooling sub-section (113) is configured to convectively cool the photovoltaic device. The cooling section of the sintering equipment in the application can effectively reduce the temperature of the photovoltaic device to the temperature required by the light treatment section (104).

Description

Sintering equipment
Technical Field
The application relates to a sintering device, in particular to a sintering device used in the field of solar cell manufacturing.
Background
In the production of photovoltaic devices such as crystalline silicon solar cell silicon wafers, a sintering furnace is required to be used for sintering the photovoltaic devices. The sintering furnace generally comprises a drying section, a sintering section, a cooling section and a light treatment section. The photovoltaic device is conveyed by the conveyor belt to sequentially pass through the drying section, the sintering section, the cooling section and the light treatment section. The temperature of the photovoltaic device needs to be controlled within a certain range at each stage so as to ensure the sintering processing effect of the photovoltaic device.
Disclosure of Invention
The present application provides a sintering apparatus comprising:
the sintering section is used for sintering the photovoltaic device; the light treatment section is used for carrying out light treatment on the photovoltaic device after sintering treatment; a cooling section disposed between the sintering section and the light treatment section, the cooling section comprising a first cooling zone and a second cooling zone, wherein the first cooling zone is connected with the sintering section, the first cooling zone is configured to cool a photovoltaic device in a radiation cooling manner, the second cooling zone is configured to cool the photovoltaic device in a convection cooling manner, the first cooling zone cools the photovoltaic device to a first temperature range, the second cooling zone cools the light body device to a second temperature range.
According to the sintering apparatus described above, the second temperature range is 180 ℃ to 250 ℃.
According to the sintering apparatus described above, the first temperature range is 280 ℃ to 350 ℃.
According to the sintering equipment, the first cooling subarea comprises at least one radiation cooling module, the radiation cooling module comprises a first upper heat exchanger and a first lower heat exchanger, a space allowing the photovoltaic devices to pass through is arranged between the first upper heat exchanger and the first lower heat exchanger, and the surfaces of the first upper heat exchanger and the first lower heat exchanger are black.
According to the sintering apparatus described above, the black color of the surfaces of the first upper heat exchanger and the first lower heat exchanger is formed by the aluminum oxidation process or by applying a coating layer.
According to the sintering equipment, the first upper heat exchanger and the first lower heat exchanger are fin tube type heat exchangers, each fin tube type heat exchanger comprises a coil and a plurality of fins which are arranged in sequence, a space is reserved between every two adjacent fins, and the coil penetrates through the fins.
The sintering apparatus as described above, the second cooling zone comprising at least one convection cooling module comprising a second upper heat exchanger and a second lower heat exchanger with a space therebetween to allow passage of the photovoltaic device, the second upper heat exchanger having at least one fan disposed above the second upper heat exchanger, the at least one fan configured to enable airflow from the second upper heat exchanger to the second lower heat exchanger;
the distance between the bottom of the fan and the top of the second upper heat exchanger is not less than 25 CM.
According to the sintering equipment, the second upper heat exchanger and the second lower heat exchanger are fin tube type heat exchangers, each fin tube type heat exchanger comprises a coil and a plurality of fins which are arranged in sequence, a space is reserved between every two adjacent fins, and the coil penetrates through the fins.
According to the sintering equipment, the at least one fan is a plurality of fans which are uniformly distributed above the second upper heat exchanger, and the power of the plurality of fans is adjustable; the second cooling zone includes a fan support on which the plurality of fans are mounted.
According to the sintering apparatus described above, the distance between the second cooling partition and the sintering section is not less than 0.85 m.
The cooling section that this application provided includes two cooling subareas, adopts radiation cooling and convection cooling's mode respectively, and good cooling effect can be played in combination between the two to the cooling section can be effectively with the temperature drop to ideal scope. The combination of the two cooling modes can ensure that the cooling section has smaller volume and saves space while ensuring the cooling effect.
Drawings
FIG. 1 is a perspective view of a sintering apparatus of the present application;
FIG. 2A is a perspective view of the cooling section 103 of the sintering apparatus 100 of FIG. 1;
FIG. 2B is a perspective view of the cooling section 103 of FIG. 2A with the front cover plate removed;
FIG. 3A is a perspective view of the cooling assembly 201 in the cooling section 103 of FIG. 2B;
FIG. 3B is a cross-sectional view of the cooling assembly 201 of FIG. 3A taken along line A-A;
FIG. 4A is a perspective view of the radiant cooling module 221 of FIG. 3A;
FIG. 4B is an exploded view of the radiant cooling module 221 of FIG. 4A;
FIG. 5 is a perspective view of the heat exchanger bracket of the radiant cooling module 221 of FIG. 4A;
FIG. 6A is a perspective view of the convective cooling assembly 222 of FIG. 3A;
FIG. 6B is an exploded view of the convective cooling assembly 222 in FIG. 6A;
fig. 7 is a cross-sectional view of the convective cooling assembly 222 along line B-B in fig. 6A.
Detailed Description
Various embodiments of the present application will now be described with reference to the accompanying drawings, which form a part hereof. It should be understood that although directional terms such as "front," "rear," "upper," "lower," "left," "right," and the like may be used herein to describe various example structural portions and elements of the application, these terms are used herein for convenience of description only and are to be determined based on the example orientations shown in the drawings. Because the embodiments disclosed herein can be arranged in a variety of orientations, these directional terms are used for purposes of illustration only and are not to be construed as limiting.
Fig. 1 is a perspective view of a sintering apparatus 100 according to the present application, and as shown in fig. 1, the sintering apparatus 100 includes a drying section 101, a sintering section 102, a cooling section 103, a light treatment section 104, and a sub-cooling section 105. The photovoltaic device (not shown) to be processed is conveyed by a conveyor belt and passes through the drying section 101, the sintering section 102, the cooling section 103, the light treatment section 104 and the sub-cooling section 105 in sequence along the direction indicated by an arrow 108, and the sintering process is completed. The drying section 101 is provided therein with a heating device and is configured to heat the temperature of the photovoltaic device to a drying temperature (e.g., 200 ℃ -300 ℃) so that the organic solvent on the photovoltaic device is volatilized. The photovoltaic device after the drying process enters the sintering section 102, and a heating device is disposed in the sintering section 102 and configured to heat the photovoltaic device to a sintering temperature (e.g., 700 ℃ to 900 ℃) so that the photovoltaic device is subjected to a high-temperature sintering process. The photovoltaic device after the sintering process enters a cooling section 103, and a cooling device is arranged in the cooling section 103 and is configured to cool the photovoltaic device to a cooling temperature (e.g., 200 ℃ to 250 ℃) to meet the temperature requirement of the light processing section 104. The light processing section 104 performs light processing on the photovoltaic device to balance the light exhaustion of the photovoltaic device. Heating means are provided in the light treatment stage 104 and are adapted to bring the temperature in the light treatment stage 104 in the range 180-250 ℃. The sub-cooling section 105 cools the photovoltaic device processed by the photo-processing section 104 to a lower temperature (e.g., 20 ℃ to 70 ℃).
In the embodiment shown in fig. 1, the cooling section 103 is provided with a first cooling partition 112 and a second cooling partition 113. The first cooling partition 112 is provided with a heat exchanger therein and is configured to cool the photovoltaic device by radiation cooling, that is, the heat exchanger directly absorbs heat radiated by the photovoltaic device and dissipated into the air. The second cooling partition 113 is also provided with a heat exchanger and is configured to cool the photovoltaic device by using a convection cooling method, that is, the heat exchanger absorbs heat emitted by the photovoltaic device due to convection of air, thereby cooling the photovoltaic device. According to embodiments of the present application, the temperature of the photovoltaic device is between 700 ℃ and 900 ℃ when the photovoltaic device enters the first cooling zone 112 from the sintering section 102; as the photovoltaic device exits from the first cooling sub-section 112, the temperature of the photovoltaic device near the exit of the first cooling sub-section 112 is reduced to around 300 ℃ (300 ℃ -350 ℃). When the photovoltaic device enters the second cooling zone 113 from the first cooling zone 112, the temperature of the photovoltaic device is around 300 ℃ (300 ℃ -350 ℃); as the photovoltaic device exits from the second cooling section 113, the temperature of the photovoltaic device is reduced to around 200 ℃ (200 ℃ -250 ℃). The temperature range of the photovoltaic devices exiting from the second cooling section 113 matches the temperature required by the light treatment stage 104.
In the existing sintering equipment, a first cooling subarea 112 which is cooled by radiation cooling is arranged in a cooling section 103, but a second cooling subarea 113 which is cooled by convection cooling is not arranged; therefore, the temperature of the photovoltaic device entering the cooling section from the sintering section 102 is reduced to 300 ℃ from 800 ℃ to 900 ℃ (300 ℃ to 350 ℃) by the cooling section of the existing sintering equipment. The photovoltaic device manufactured by using the existing sintering equipment can meet the requirements of the existing use, but the parameters of the photovoltaic device can be improved in the manufacturing process of the existing sintering equipment. For example, the required light treatment time of the photovoltaic device may be prolonged, if the light treatment time is insufficient, the light attenuation balance of the finished photovoltaic device may not be achieved, and at this time, if the finished photovoltaic device just manufactured is used immediately, the light conversion efficiency of the finished photovoltaic device may be affected. Upon observation, testing and use of photovoltaic devices, applicants recognized that: when the photovoltaic device is subjected to the illumination treatment in the light treatment section 104, the temperature of the photovoltaic device is around 300 ℃ (300 ℃ -350 ℃) which is why the photovoltaic device finished product needs longer illumination treatment time. Thus, the present application adds a second cooling section 113 in the embodiment shown in fig. 1 for lowering the photovoltaic devices output from the second cooling section 113 from a temperature at around 300 ℃ (300 ℃ -350 ℃) to around 200 ℃ (200 ℃ -250 ℃). The photovoltaic device is cooled from the temperature around 300 ℃ (300 ℃ -350 ℃) to the temperature around 200 ℃ (200 ℃ -250 ℃), and then the photovoltaic device is subjected to illumination treatment in the light treatment section 104, so that the light treatment time required for the photovoltaic device to achieve light attenuation balance is short.
Fig. 2A is a perspective view of the cooling section 103 of the sintering apparatus 100 of fig. 1, and fig. 2B is a perspective view of the cooling section 103 of fig. 2A with a front plate hidden to show the internal structure of the cooling section 103. As shown in fig. 2A and 2B, the cooling section 103 includes a housing 202 and a cooling assembly 201. The housing 202 is a substantially box body having an opening at a lower portion thereof, and has an upper plate 211, a front plate 212, a rear plate 213, a left plate 214, and a right plate 215. Wherein the side of the housing 202 adjacent to the left plate 214 is connected to the sintering section 103 and the side adjacent to the right plate 215 is connected to the light processing section 104. The upper portions of the left plate 214 and the right plate 215 are provided with openings 218 for allowing the conveyor belt to pass through. The cooling module 201 is disposed at an upper portion of the housing 202 and is disposed near the conveyor belt. The cooling assembly 201 includes a radiant cooling assembly 221 and a convective cooling assembly 222, the radiant cooling assembly 221 being located in the first cooling zone 112 and the convective cooling assembly 222 being located in the second cooling zone 113. The bottom of the housing 202 is provided with a stand or pulley 271 to allow the lower opening to be spaced from the ground so that the lower opening communicates with the outside.
Fig. 3A is a perspective view of the cooling module 201 in fig. 2B, and fig. 3B is a sectional view of the cooling module 201 in fig. 3A taken along line a-a. As shown in fig. 3A and 3B, the radiation cooling module 221 and the convection cooling module 222 in the cooling module 201 are connected by a connection member 305. The radiant cooling module 221 includes two identical radiant cooling modules 311.1 and 311.2 and the convective cooling module 222 includes two identical convective cooling modules 312.1 and 312.2. The radiant cooling modules 311.1 and 311.2 have transfer spaces 315.1 and 315.2 therein, and the convective cooling modules 312.1 and 312.2 have transfer spaces 316.1, 316.2 therein. The transfer space 315.1 and the transfer space 316.1 are aligned to form a first transfer path and the transfer space 315.2 and the transfer space 316.2 are aligned to form a second transfer path. The first conveying channel and the second conveying channel are independent from each other, conveying belts are arranged inside the first conveying channel and the second conveying channel respectively, and two photovoltaic device processing lines are formed. In other embodiments, only one radiant cooling module and one convection cooling module may be provided to form a processing line, or a plurality of radiant cooling modules and convection cooling modules in a one-to-one correspondence may be provided to form a plurality of processing lines. Wherein the radiant cooling assembly 221 is proximate to the sintering section 102 and the convective cooling assembly 222 is proximate to the light treatment section 104.
Fig. 4A is a perspective view of the radiant cooling module 221 in fig. 3A, and fig. 4B is an exploded view of the radiant cooling module 221 in fig. 4A. As shown in fig. 4A and 4B, the radiant cooling module 221 includes a heat exchanger bracket 405 in addition to the two radiant cooling modules 311.1 and 311.2. The specific structure of two radiant cooling modules will be described below by taking the radiant cooling module 311.2 located at the front in the figure as an example. The radiant cooling module 311.2 comprises a first upper heat exchanger 401 and a first lower heat exchanger 402. The first upper heat exchanger 401 and the first lower heat exchanger 402 are respectively installed at opposite sides of the heat exchanger support 405 with a certain interval between the first upper heat exchanger 401 and the first lower heat exchanger 402 to form the transfer space 315.1. The first upper heat exchanger 401 and the first lower heat exchanger 402 are fin-tube heat exchangers, and each of the heat exchangers includes a plurality of fins 432 and 433 arranged side by side, and a coil 435 passing through the fins 432 and 433. The coil 435 has a cooling water inlet and a cooling water outlet, the cooling water inlet is communicated with the cooling water, and the cooling water entering the coil 435 after heat exchange flows out from the cooling water outlet. The surfaces of the fins 432 and 433 form heat exchange surfaces that exchange heat with air.
The coils 435 of the first upper heat exchanger 401 and the first lower heat exchanger 402 in each heat exchanger module communicate through coil connection sections 436. The cooling water flows into the coil 435 of the first upper heat exchanger 401 from the cooling water inlet of the first upper heat exchanger 401, then flows into the coil 435 of the first lower heat exchanger 402 via the coil connection section 436, and flows out from the cooling water outlet of the first lower heat exchanger 402. The arrangement of the flow direction of the cooling water is for better heat exchange. Specifically, since the hot air flows upward, the air in the vicinity of the first upper heat exchanger 401 is relatively more heated than the air in the vicinity of the first lower heat exchanger 402. Since the cooling water firstly enters the first upper heat exchanger 401 and then enters the first lower heat exchanger 402, the temperature of the cooling water in the first upper heat exchanger 401 is lower, which is beneficial to heat exchange with the air with larger heat near the first upper heat exchanger 401.
Each fin 433 extends in a vertical direction with a space between adjacent fins 433. The fins 433 can increase a heat exchange area. The outer surface of the fin 433 is black, and is made by aluminum oxidation process or coating black materials such as Teflon. The black surface is favorable for the heat exchanger to absorb heat, and the heat exchange efficiency is improved. The outer surface of the coil 435 may also be provided in black. In other embodiments, the first upper heat exchanger 401 and the first lower heat exchanger 402 may also be provided as plate heat exchangers, the heat exchange surfaces of which are flat plates. Since the heat exchange area of the flat plate in the plate heat exchanger is smaller than that of the fin in the fin tube heat exchanger, the length of the cooling section 103 using the plate heat exchanger may be set to be greater than that of the cooling section 103 using the fin tube heat exchanger in order to obtain a heat exchange amount similar to or the same as that of the fin tube heat exchanger.
Fig. 5 is a perspective view of the heat exchanger bracket of the radiation cooling module 221 in fig. 4B, as shown in fig. 5, the heat exchanger bracket 405 has two hollow parts 508.1 and 508.2 therein, and the radiation cooling modules 311.1 and 311.2 are respectively disposed in the hollow parts 508.1 and 508.2, so that the radiation cooling modules 311.1 and 311.2 are easy to directly contact with air and are not blocked by the heat exchanger bracket 405. The heat exchanger bracket 405 has a pair of first side openings 415.1 and 415.2 and a pair of second side openings 416.1 and 416.2 on opposite sides of the radiant cooling modules 311.1 and 311.2, respectively. The first 415.1 and second 416.1 side openings are aligned with the transport space 315.1 of the radiant cooling module 311.1 for forming a first transport channel; the first 415.2 and second 416.2 side openings are aligned with the transport space 315.2 of the radiant cooling module 311.2 for forming a second transport channel.
Fig. 6A is a perspective view of the convective cooling assembly 222 in fig. 3A, and fig. 6B is an exploded view of the convective cooling assembly 222 in fig. 6A. As shown in fig. 6A and 6B, each of the two convective cooling modules 312.1 and 312.2 of the convective cooling assembly 222 comprises a fan assembly 603, a second upper heat exchanger 601 and a second lower heat exchanger 602. The specific structure of the two convection cooling modules will be described below by taking the convection cooling module 312.2 as an example. In addition to the two convective cooling modules 312.1 and 312.2, the convective cooling assembly 222 also includes a heat exchanger cradle 617 for supporting the two convective cooling modules 312.1 and 312.2. The heat exchanger support 617 and the heat exchanger in the convection cooling module 222 are similar or identical to the heat exchanger support and the heat exchanger in the radiation cooling module 221, and are not described in detail herein.
A transfer space is provided between the second upper heat exchanger 601 and the second lower heat exchanger 602, and a transfer belt is disposed between the second upper heat exchanger 601 and the second lower heat exchanger 602. A fan assembly 603 is disposed above the second upper heat exchanger 601. Fan assembly 603 includes a fan support 609 and three fans 605. Fan bracket 609 includes a support plate 713 and attachment plates 714 extending downwardly from the periphery of support plate 713. The support plate 713 is provided with three fan mounting holes for mounting the three fans 605. The connection plate 714 is used to connect the fan bracket 609 to the heat exchanger bracket 617 or the second upper heat exchanger 601. The bottom of the three fans 605 and the second upper heat exchanger 601 form a fluid space therebetween, and the fluid space is capable of circulating a fluid. The second upper heat exchanger 601 and the second lower heat exchanger 602 are fin-tube heat exchangers, respectively. The second upper heat exchanger 601 and the second lower heat exchanger 602 have a plurality of fins 632 and 633, respectively, the fins 632 and 633 being arranged side by side in a horizontal direction, each fin extending in a vertical direction. Three fans 605 are disposed above the second upper heat exchanger 601 and blow air downward to flow the air flow near the conveyor belt downward. The downward flow of the air stream adjacent the conveyor belt prevents the lighter weight photovoltaic devices on the conveyor belt from moving under the influence of the side-stream and upward-stream air streams. The downward air flow provided by the fan 605 passes through the interval between the fins 632 of the second upper heat exchanger 601 and the fins 633 of the second lower heat exchanger 602, so that the flow speed of the air is increased. In one embodiment of the present application, three fans 605 evenly distributed over the second upper heat exchanger 601 can distribute the airflow more evenly between the heat exchangers. In other embodiments, the number and power of the fans above the second upper heat exchanger 601 can be configured according to actual needs.
Fig. 7 is a cross-sectional view of the convective cooling assembly 222 taken along line B-B in fig. 6A, and as shown in fig. 7, a fan support 609 allows a space between the fan 605 and the top of the second upper heat exchanger 601 to form an air flow space. The spacing is, for example, above 25cm, and in one embodiment the spacing is 30 cm. The spacing between the fan 605 and the top of the second upper heat exchanger 601 enables the airflow blown by the fan 605 to spread evenly over the fins of the second upper heat exchanger 601 in the air flow space formed by the spacing, enabling the airflow to pass evenly through the fins of the second upper heat exchanger 601. If the distance between the fan 605 and the top of the second upper heat exchanger 601 is too small, most of the air flow blown out from the fan 605 has not spread to the surroundings so far that it passes through the fins of the second upper heat exchanger 601 directly below the fan 605, so that the second upper heat exchanger 601 is heated unevenly. The outer surfaces of the heat exchanger fins and coils of the convective cooling module 222 may or may not be machined black.
According to the present application, in the first cooling zone 112, the heat exchanger directly absorbs the heat radiated into the air by the photovoltaic device, thereby cooling the photovoltaic device, and in the second cooling zone 113, the heat exchanger absorbs the heat radiated by the photovoltaic device due to the convection of air, thereby cooling the photovoltaic device. The first cooling section 112 and the second cooling section 113 are cooled by heat exchange with the air around the photovoltaic device through heat exchangers, except that the air flows in the first cooling section 112 and the second cooling section 113 are different, the air in the first cooling section does not flow or flows little, and the air in the second cooling section 113 flows in large quantities.
In the embodiment shown in fig. 1-7, the present application does not use a method of increasing the total heat exchange capacity of the heat exchangers of the first cooling zone 112 (e.g., increasing cooling water flow, decreasing cooling water temperature) to increase the effect of the first cooling zone 112 on the photovoltaic devices. In the first cooling zone 112, the heat exchanger reduces the temperature of the photovoltaic device by absorbing energy radiated from the photovoltaic device. In the existing design, if the cooling water flow is further increased to enhance the cooling effect on the photovoltaic device, the further cooling of the photovoltaic device is less helpful. This is because in the first cooling zone 112, the temperature of the cooling water at the cooling water inlet of the heat exchanger is the same as the ambient temperature, and the heat exchanger conducts heat with the heat exchange surface of the heat exchanger through the cooling water, lowering the temperature of the heat exchange surface. During operation of the heat exchanger, the heat exchange surface of the heat exchanger has a heat exchange surface temperature and the air surrounding the heat exchange surface of the heat exchanger has an air temperature. The temperature of the heat exchange surface is affected by the temperature of the cooling water, and the temperature of the air is affected by the heat emitted by the photovoltaic device through thermal radiation. The temperature of the heat exchange surface is close to the temperature of air, so that after the heat exchanger exchanges heat with the air around the heat exchange surface of the heat exchanger, the temperature difference between the inlet and the outlet of cooling water of the heat exchanger is small, if the flow of the cooling water is further increased, the heat generated by the photovoltaic device is further absorbed with little help, so that the temperature of the photovoltaic device is further reduced with little help, and the temperature of the photovoltaic device cannot be further reduced to be around 200 ℃ (200 ℃ -250 ℃). If the cooling effect of the photovoltaic device is enhanced by reducing the temperature of the cooling water, the temperature of the photovoltaic device can be further reduced, but the cooling water needs to be cooled first, the process is complex, the cost is high, and the lower cooling water in temperature easily causes dewing on the surface of a cooling water pipeline to influence the service life of the heat exchanger.
Further, in the embodiment shown in fig. 1-7, the present application also does not use a method of increasing the length of the first cooling zone 112 (i.e., adding more heat exchangers in the first cooling zone) to reduce the temperature of the photovoltaic devices in the first cooling zone 112 to about 200 ℃ (200 ℃ to 250 ℃), and for similar reasons as described above, the inlet and outlet temperatures of the cooling water of the heat exchangers of the first cooling zone 112 will differ less if the inlet temperature of the cooling water is consistent with the ambient temperature, and will contribute less to further heat absorption if the length of the first cooling zone 112 is further increased. If the photovoltaic device is further cooled by increasing the length of the first cooling zone 112, it may be necessary to increase the first cooling zone 112 to a longer length, for example, a multiple of the length of the original first cooling zone 112, in order to lower the temperature of the photovoltaic device to about 200 ℃ (200 ℃ -250 ℃). This design would add too much to the volume of the sintering furnace and would add significant cost.
Further, in the embodiment shown in fig. 1-7, convection cooling is not disposed in the first cooling zone 112 in the present application either, because the first cooling zone 112 is immediately adjacent to the sintering section 102 and air fluctuations created by the convection cooling may interfere with the operation of the sintering section 102.
In the embodiment shown in fig. 1-7, the first cooling section 112, which is used in the present application with radiation cooling, cools the photovoltaic devices therein from 800-900 c to around 300 c (300-350 c). The power of the heat radiated by the object is in direct proportion to the fourth power of the absolute temperature of the object, the power of the heat radiated by the object is larger in a higher temperature range, and the power of the heat radiated by the object is smaller in a lower temperature range. In this application, the photovoltaic device radiates more power in the range of 800-900 ℃ to around 300 ℃. The first cooling section 112, which is in a radiation cooling manner, is capable of absorbing this portion of the heat, thereby cooling the photovoltaic device from 800-900 c to around 300 c (300-350 c). The power of the radiation heat dissipation of the photovoltaic device is smaller in the range from about 300 ℃ to about 200 ℃, the circulation of air near the photovoltaic device is increased by using the convection cooling mode of the second cooling subarea 113, the heat dissipation speed of the photovoltaic device is increased, the power of the radiation heat of the photovoltaic device is improved, and the heat exchanger in the second cooling subarea 113 can absorb the heat dissipated by the photovoltaic device, so that the photovoltaic device can be quickly reduced from about 300 ℃ (300 ℃ -350 ℃) to about 200 ℃ (200 ℃ -250 ℃).
In the embodiment shown in fig. 1-7, two cooling zones with different working modes are arranged, namely a first cooling zone 112 and a second cooling zone 113, the first cooling zone 112 mainly absorbs heat radiated by the photovoltaic device through a heat exchanger directly to reduce the temperature of the photovoltaic device, the second cooling zone 113 enhances air flow near the photovoltaic device through a convection mode, and the second cooling zone 113 mainly reduces the temperature of the photovoltaic device through absorbing heat radiated by air convection near the photovoltaic device. In the first cooling zone 112, the temperature of the photovoltaic device is higher, the radiation heat dissipation power of the photovoltaic device is higher, and the radiation cooling is a relatively efficient cooling mode. In the second cooling partition 113, the temperature of the photovoltaic device is reduced, the radiation heat dissipation power of the photovoltaic device is reduced, the heat dissipation power of the photovoltaic device can be improved by convection, and the convection cooling mode is a relatively efficient cooling mode. The combination of the first cooling zone 112 and the second cooling zone 113 can meet the cooling requirements of the photovoltaic device to cool the photovoltaic device to a reasonable temperature range to accommodate the temperature required by the light treatment stage 104. In addition, the combination of the first cooling subarea 112 and the second cooling subarea 113 meets the requirement of cooling the photovoltaic device to the ideal temperature range, and meanwhile, the cooling section 103 is short in length, small in size and low in manufacturing cost.
The inventors have observed and experimentally learned that higher temperatures in the light treatment stage 104 will reduce the effectiveness of the light treatment and require longer light treatment times to reach the equilibrium state of light depletion. It is therefore desirable to bring the photovoltaic devices entering the light treatment section 104 to a desired temperature range to save light treatment time. The use of the convective cooling assembly 222 in combination with the radiant cooling assembly 221 enables the cooling section 103 to reduce the temperature to that required by the light treatment section 104. So that the photovoltaic device after the light treatment of the light treatment section 104 achieves the light attenuation balance.
In the present application, a relatively large temperature difference exists between the sintering section 102 and the cooling section 103, and a certain temperature needs to be ensured inside the sintering section 102 to avoid the temperature fluctuation from affecting the sintering quality, so that the air in the cooling section 103 should be prevented from entering the sintering section 102. The distance between the second cooling sub-area 113 and the sintering section 102 is not less than 0.85m, so that air flow generated by a fan is prevented from entering the sintering section 102, the temperature near the outlet of the sintering section is reduced, the maximum temperature of the photovoltaic device is greatly fluctuated, and the sintering effect is influenced. The temperature of the light treatment section 104 is close to the outlet temperature of the convective cooling assembly 222, and the temperature of the light treatment section 104 is not affected even if the airflow enters the light treatment section 104. That is, the second cooling partition 113, which employs convective cooling, may be disposed immediately adjacent to the light treatment section 104, but not immediately adjacent to the sintering section 102. The first cooling partition 112 separates the second cooling partition 113 from the sintering section 102, avoiding the influence of the gas flow on the sintering section 102.
In the present application, the conveyor belt has a transport speed of 6 to 10m/min, and the total length of the first cooling zone 112 and the second cooling zone 113 is about 1.5 to 2 m. The first cooling partition 112 is disposed next to the sintering section 102, so that the photovoltaic device sintered by the sintering section 102 can rapidly enter the first cooling partition 112 for cooling, thereby ensuring the light conversion efficiency of the finished photovoltaic device. If the cooling speed of the photovoltaic device after sintering is too slow, the light conversion efficiency of the finished photovoltaic device is affected.
In the present application, with respect to the heat exchangers disposed in the first cooling zone 112 and the second cooling zone 113, during use, the heat exchangers in the first cooling zone 112 are typically operated at a designed maximum heat exchange power to rapidly reduce the temperature of the photovoltaic devices. The heat exchanger power and the fan power in the second cooling partition 113 are adjusted according to the use condition, the photovoltaic device is cooled to a proper temperature range, and the problem that the subsequent illumination processing is influenced due to too low temperature of the photovoltaic device is avoided. The heat exchanger power can be adjusted by adjusting the flow rate of water in the heat exchange coil. The fan power can be adjusted by adjusting the speed of the fan.
While only certain features of the application have been illustrated and described herein, many modifications and changes will occur to those skilled in the art. It is, therefore, to be understood that the appended claims are intended to cover all such modifications and changes as fall within the true spirit of the application.

Claims (10)

1. A sintering apparatus for processing a photovoltaic device, comprising:
a sintering section (102) for sintering the photovoltaic device;
a light treatment section (104) for performing light treatment on the photovoltaic device after sintering treatment;
a cooling section (103), the cooling section (103) disposed between the sintering section (102) and the light treatment section (104), the cooling section (103) comprising a first cooling partition (112) and a second cooling partition (113), wherein the first cooling partition (112) is connected with the sintering section (102), the first cooling partition (112) is configured to cool a photovoltaic device in a radiation cooling manner, the second cooling partition (113) is configured to cool the photovoltaic device in a convection cooling manner, the first cooling partition (112) cools the photovoltaic device to a first temperature range, the second cooling partition (112) cools the light body device to a second temperature range.
2. The sintering apparatus of claim 1, wherein:
the second temperature range is 180 ℃ to 250 ℃.
3. The sintering apparatus of claim 1, wherein:
the first temperature range is 280 ℃ to 350 ℃.
4. The sintering apparatus of claim 1, wherein:
the first cooling zone (112) comprises at least one radiation cooling module, the radiation cooling module comprises a first upper heat exchanger (401) and a first lower heat exchanger (402), a space allowing the photovoltaic device to pass through is arranged between the first upper heat exchanger (401) and the first lower heat exchanger (402), and the surfaces of the first upper heat exchanger (401) and the first lower heat exchanger (402) are black.
5. The sintering apparatus of claim 4, wherein:
the black color of the surfaces of the first upper heat exchanger (401) and the first lower heat exchanger (402) is formed by an aluminum oxidation process or by applying a coating.
6. The sintering apparatus of claim 4, wherein:
the first upper heat exchanger (401) and the first lower heat exchanger (402) are fin tube type heat exchangers, each fin tube type heat exchanger comprises a coil and a plurality of fins which are arranged in sequence, a distance is reserved between every two adjacent fins, and the coil penetrates through the fins.
7. The sintering apparatus of claim 1, wherein:
the second cooling zone (113) comprises at least one convection cooling module comprising a second upper heat exchanger (601) and a second lower heat exchanger (602), a space is provided between the second upper heat exchanger (601) and the second lower heat exchanger (602) for allowing the photovoltaic device to pass through, at least one fan (605) is provided above the second upper heat exchanger (601), and the at least one fan (605) is configured to enable airflow from the second upper heat exchanger (601) to the second lower heat exchanger (602);
the distance between the bottom of the fan (605) and the top of the second upper heat exchanger (601) is not less than 25 CM.
8. The sintering apparatus of claim 7, wherein:
the second upper heat exchanger (601) and the second lower heat exchanger (602) are fin tube type heat exchangers, each fin tube type heat exchanger comprises a coil and a plurality of fins which are arranged in sequence, a space is reserved between every two adjacent fins, and the coil penetrates through the fins.
9. The sintering apparatus of claim 7, wherein:
the at least one fan (605) is a plurality of fans which are evenly distributed above the second upper heat exchanger (601), and the power of the plurality of fans is adjustable;
the second cooling partition (113) includes a fan bracket on which the plurality of fans are mounted.
10. The sintering apparatus of claim 1, wherein:
the distance between the second cooling partition (113) and the sintering section (102) is not less than 0.85 m.
CN202011059510.8A 2019-11-05 2020-09-30 Sintering equipment Pending CN112768372A (en)

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US20080314892A1 (en) * 2007-06-25 2008-12-25 Graham Robert G Radiant shield
DE102011009693A1 (en) * 2011-01-28 2012-08-02 Centrotherm Thermal Solutions Gmbh & Co. Kg Cooling module and device for the thermal treatment of substrates
KR101807381B1 (en) * 2013-06-26 2018-01-10 우니페르시테트 콘스탄츠 Method and device for producing a photovoltaic element with stabilized efficiency
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US9780252B2 (en) * 2014-10-17 2017-10-03 Tp Solar, Inc. Method and apparatus for reduction of solar cell LID
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US10443941B2 (en) * 2015-05-20 2019-10-15 Illinois Tool Works Inc. Light annealing in a cooling chamber of a firing furnace
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