KR101642271B1 - Method for Manufacturing Dopant Doped Silicon Nano Material and Local Doping Method thereof - Google Patents
Method for Manufacturing Dopant Doped Silicon Nano Material and Local Doping Method thereof Download PDFInfo
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- KR101642271B1 KR101642271B1 KR1020150044900A KR20150044900A KR101642271B1 KR 101642271 B1 KR101642271 B1 KR 101642271B1 KR 1020150044900 A KR1020150044900 A KR 1020150044900A KR 20150044900 A KR20150044900 A KR 20150044900A KR 101642271 B1 KR101642271 B1 KR 101642271B1
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- dopant
- silicon
- doped silicon
- mixed powder
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 54
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 51
- 239000010703 silicon Substances 0.000 title claims abstract description 51
- 238000000034 method Methods 0.000 title claims abstract description 28
- 239000002019 doping agent Substances 0.000 title claims abstract description 22
- 239000002086 nanomaterial Substances 0.000 title claims abstract description 14
- 238000004519 manufacturing process Methods 0.000 title claims description 24
- 238000009616 inductively coupled plasma Methods 0.000 claims abstract description 22
- 238000010791 quenching Methods 0.000 claims abstract description 17
- 230000000171 quenching effect Effects 0.000 claims abstract description 17
- 239000011858 nanopowder Substances 0.000 claims abstract description 14
- 239000011812 mixed powder Substances 0.000 claims description 26
- 239000000758 substrate Substances 0.000 claims description 14
- 230000008569 process Effects 0.000 claims description 9
- 238000007639 printing Methods 0.000 claims description 7
- 238000009792 diffusion process Methods 0.000 claims description 5
- 229910021478 group 5 element Inorganic materials 0.000 claims description 5
- 238000001035 drying Methods 0.000 claims description 4
- 230000000903 blocking effect Effects 0.000 claims description 2
- 238000002347 injection Methods 0.000 claims 1
- 239000007924 injection Substances 0.000 claims 1
- 239000000843 powder Substances 0.000 abstract description 8
- 239000000203 mixture Substances 0.000 abstract 5
- 238000005507 spraying Methods 0.000 abstract 1
- 239000007789 gas Substances 0.000 description 15
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 5
- 238000002156 mixing Methods 0.000 description 5
- 229910052698 phosphorus Inorganic materials 0.000 description 5
- 239000011574 phosphorus Substances 0.000 description 5
- KRHYYFGTRYWZRS-UHFFFAOYSA-N hydrofluoric acid Substances F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000002149 energy-dispersive X-ray emission spectroscopy Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000007650 screen-printing Methods 0.000 description 3
- 239000013078 crystal Substances 0.000 description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 239000006185 dispersion Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000003912 environmental pollution Methods 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 238000001914 filtration Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 239000005360 phosphosilicate glass Substances 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 239000012670 alkaline solution Substances 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000011863 silicon-based powder Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
- 230000003685 thermal hair damage Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/028—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic System
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J19/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
- B01J19/08—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor
- B01J19/087—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor employing electric or magnetic energy
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/021—Preparation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Inorganic Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- General Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Health & Medical Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Manufacturing & Machinery (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
The present invention relates to a dopant-doped silicon nano-material manufacturing method and a local doping method thereof, and more particularly, to a doped doped silicon nano material which can reduce manufacturing cost, easily control doping concentration, And a local doping method thereof.
Recently, as the environmental pollution problem becomes serious, researches on renewable energy that can reduce environmental pollution are being actively carried out. Especially, attention is focused on solar cells capable of producing electric energy using solar energy.
A solar cell is a photoelectric conversion device that converts solar energy directly into electric energy. The solar cell is a junction of a p-type semiconductor and an n-type semiconductor, and its basic structure is similar to a diode.
Such solar cells are generally classified into silicon solar cells and compound semiconductor solar cells depending on the material, and are classified into a substrate type and a thin film type depending on the type. Among these, substrate-type crystalline silicon solar cells are widely used for photovoltaic power generation, and the substrate-type crystalline silicon solar cell forms an n-type layer (or a p-type layer) serving as an emitter on the entire surface of a silicon substrate And a p-type layer (or n-type layer) is formed on the rear surface, and a reflection preventing layer such as a silicon nitride film or an oxide film for minimizing reflection of light.
The selective emitter structure is one of the technologies that can be used for manufacturing high efficiency solar cells. The selective emitter is doped locally at a high concentration only in the electrode portion of the solar cell, while the remaining portion (light absorbing portion) It is a structure that takes advantage of both emitter layer and low concentration emitter layer.
Technologies such as photolithography applied to passivated emitter rear locally diffused cell (PERL) and laser scribing applied to Buried contact solar cell (BCSC) have been developed to form selective emitters. However, in the case of the photolithography technique, the process is complicated and the cost is high. In the case of the laser scribing method, it is difficult to form and remove the thermal damage and to control the concentration control. There is a problem that constraint occurs.
Accordingly, an object of the present invention is to provide a solar cell capable of controlling a local doping concentration suitable for a high-efficiency solar cell, universally usable regardless of the electrical type of the solar cell, capable of manufacturing silicon nano powder with a minimum manufacturing cost, Doped silicon nano materials capable of performing a local doping process at a low cost suitable for mass production of high-efficiency silicon solar cells, and a local doping method thereof.
In order to achieve the above-mentioned object, the present invention provides a method of manufacturing an inductively coupled plasma apparatus, comprising: injecting mixed powder mixed with silicon and a dopant into an inductively coupled plasma apparatus; A plasma generation step of generating a plasma by supplying high-energy RF power in pulse form to the inductively coupled plasma apparatus; An ionization step of ionizing the mixed powder by the plasma; Injecting a quenching gas while blocking the high energy RF power of the pulsed form when the mixed powder is discharged from the inductively coupled plasma torch in an ionized gaseous state; And a nano powder forming step in which a mixed powder ionized by the quenching gas is recrystallized to form nano powder doped with dopant in silicon.
In the present invention, the dopant is any one of a
According to another aspect of the present invention, there is provided a method of manufacturing a semiconductor device, the method comprising: forming concavities and convexities on a surface of a silicon substrate through a texturing process; An ink manufacturing step of fabricating a silicon nano material doped with a dopant in an ink; A printing / drying step of printing the doped silicon nano ink produced in the ink manufacturing step on the electrode forming area and then drying the doped silicon nano ink; A doping layer forming step of forming a doping layer by diffusing and heat-treating the silicon substrate in a diffusion furnace; And an oxide removing step of removing the oxide generated in the doping layer forming step.
According to the present invention, since a high energy is supplied to change a large amount of mixed powder into an ionized state at a time, it is possible to increase the production amount of the nano powder and to supply the quenching gas and the pulsed high energy RF power in synchronization As a result, power consumption and quenching gas can be reduced, thus reducing the overall manufacturing cost.
In addition, since the
1 is a view illustrating a method of fabricating a dopant-doped silicon nano material according to an embodiment of the present invention.
2 is a diagram showing a supply cycle of the high energy pulse power and the quenching gas supplied to the inductively coupled plasma apparatus.
3 is a SEM photograph of silicon and phosphorus mixed before being injected into an inductively coupled plasma apparatus.
FIG. 4 is a SEM photograph of silicon and phosphorus mixed after being discharged from an inductively coupled plasma apparatus.
5 is a SEM photograph showing a diffusion state of the dopant.
6 is a graph showing a state in which the dopant is diffused.
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. However, the detailed description of known functions and configurations incorporated herein will be omitted when it may unnecessarily obscure the subject matter of the present invention.
The same reference numerals are used for portions having similar functions and functions throughout the drawings.
In addition, when a part is referred to as being "connected" with another part throughout the specification, it includes not only a direct connection but also indirectly connecting the other parts with each other in between. Also, to "include" an element does not exclude other elements unless specifically stated otherwise, but may also include other elements.
Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.
1 is a view illustrating a method of fabricating a dopant-doped silicon nano material according to an embodiment of the present invention.
Referring to FIG. 1, a dopant-doped silicon nano material manufacturing method according to an embodiment of the present invention includes a step of mixing an inductively coupled plasma (ICP) device with silicon and a dopant A mixed powder injecting step of injecting powder; A plasma generating step of generating plasma by supplying pulsed high energy pulsed power to the inductively coupled plasma apparatus; An ionization step of ionizing the mixed powder by the plasma; Injecting a quenching gas in synchronism with the pulse power; And a nano powder forming step in which a mixed powder ionized by the quenching gas is recrystallized to form nano powder doped with dopant in silicon.
This will be described in more detail as follows.
First, the dopant material to be doped and silicon are mixed at a predetermined ratio, and the mixed powder is injected into the plasma torch of the inductively coupled plasma apparatus. At this time, the dopant material is made of any one of
After the mixed powder is injected into the inductively coupled plasma apparatus, RF power of high energy (for example, 2 MW peak) is supplied to the inductively coupled plasma apparatus in a pulse form as shown in FIG. That is, pulse-type high energy RF power is supplied to the inductively coupled plasma apparatus.
Accordingly, the mixed powder injected into the inductively coupled plasma apparatus is ionized by the high-energy RF power in the form of pulses, and is discharged from the plasma torch in an ionized gas state.
Meanwhile, when the mixed powder is converted into the ionized gaseous state as described above, the pulsed high energy RF power supplied to the inductively coupled plasma apparatus is cut off, and at the same time (that is, synchronized with the high- So that the quenching gas is supplied toward the outlet of the plasma torch.
As a result, the ionized gaseous mixed powder discharged from the plasma torch is recrystallized by the quenching gas and synthesized into nano powder. At this time, the nano powder is doped with dopant in the silicon.
Example
As shown in FIG. 3, a silicon (Si) powder and a phosphorus (P) powder having a particle size of 6 to 20 μm were prepared, and silicon powder and phosphorus powder were mixed at a ratio of 20: 1. At this time, the energy dispersive X-ray spectroscopy (EDS) analysis results of the mixed powder of silicon and phosphorus have a weight ratio (Wt%) and an atomic ratio (At%) as shown in Table 1 below.
The mixed powder thus mixed was injected into the plasma torch together with the carrier gas. In addition, AM / FM RF power of 2 MW peak with an RF power voltage of 10 kV (rms) was supplied in pulse form (ie, pulsed RF power) to the inductively coupled plasma system.
Accordingly, the mixed powder injected into the plasma torch is ionized by the high temperature of the induction plasma, and the ionized mixed powder is discharged to the outside from the plasma torch.
Thus, the quenching gas was supplied toward the discharge port of the plasma torch so as to synchronize with pulsed RF power when the ionized mixed powder was discharged from the plasma torch.
As a result, the ionized mixed powder discharged from the plasma torch is recrystallized into a nanopowder doped with dopant into silicon by quenching gas. As shown in FIG. 4, the nanopowder having a particle size of 0.1 μm or less is synthesized.
As a result of EDS analysis, the thus synthesized nano powder had a weight ratio (Wt%) and an atomic ratio (At%) as shown in Table 2 below. As shown in Table 1, when the weight ratio Wt %) And atomic weight ratio (At%).
On the other hand, the nano powder synthesized through the above-described method can be formed into an ink form through a mixing process of mixing organic materials, a general ink production method, a dispersion process for controlling dispersion and viscosity, and a filtration process for filtration with a filter.
A method of manufacturing a solar cell using a doped silicon nano ink (Dopant Doped Silicon Nano Ink) manufactured in the ink form is as follows.
First, irregularities are formed on the surface of the silicon substrate through a texturing process. In this case, a single crystal or a polycrystalline substrate can be used as the silicon substrate. When wet etching is applied to the single crystal substrate, an alkaline solution such as KOH or NaOH is used as an etching agent. An acidic system such as HF or HNO 3 Solution is used.
After the unevenness is formed, the doped silicon nano ink is printed on the electrode forming area and dried. At this time, the electrode formation region can be formed by exposing the silicon substrate in the electrode formation region using a screen mask, and then printing a silicon nano ink doped with a dopant by a screen printing method.
Thereafter, the silicon substrate on which the dopant-doped silicon nano ink is printed is subjected to a diffusion and heat treatment process in a diffusion furnace. As a result, the electrode formation region is formed of a high concentration doping layer because the dopant is diffused into the silicon substrate as shown in FIGS. 5 and 6, and the remaining silicon substrate, on which the doped silicon nano ink is not printed, Thereby forming a doping layer.
On the other hand, unnecessary oxides such as PSG (Phospho-Silicate Glass), which are unnecessarily generated in the heat treatment process, are removed by using hydrofluoric acid (HF) or the like because they may hinder the insulation characteristics of the solar cell.
As described above, in the dopant-doped silicon nano material manufacturing method and the local doping method according to the embodiment of the present invention, since a large amount of mixed powder can be changed into an ionized state by supplying high energy, And the quenching gas and the pulsed high energy RF power are supplied in synchronization with each other, so that the power consumption and the quenching gas can be reduced, thereby reducing the overall manufacturing cost.
In addition, the dopant-doped silicon nanomaterial fabrication method and the local doping method thereof according to the embodiments of the present invention can use
While the present invention has been described in connection with what is presently considered to be the most practical and preferred embodiment, it is to be understood that the invention is not limited to the disclosed embodiments. It will be apparent to those skilled in the art that various modifications and variations can be made in the present invention without departing from the spirit of the invention.
Accordingly, the scope of the present invention is not limited to the above-described embodiments, but may be implemented in various forms of embodiments within the scope of the appended claims. It will be understood by those of ordinary skill in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention as defined in the appended claims.
Claims (3)
A plasma generation step of generating a plasma by supplying high-energy RF power in pulse form to the inductively coupled plasma apparatus;
An ionization step of ionizing the mixed powder by the plasma;
Injecting a quenching gas while blocking the high energy RF power of the pulsed form when the mixed powder is discharged from the inductively coupled plasma torch in an ionized gaseous state; And
And a nano powder forming step of forming a nano powder by doping the dopant into silicon by recrystallizing the mixed powder ionized by the quenching gas.
Wherein the dopant is one of a Group 3 element and a Group 5 element.
An ink manufacturing method for manufacturing a doped silicon nano material using an ink according to any one of claims 1 and 2,
A printing / drying step of printing the doped silicon nano ink produced in the ink manufacturing step on the electrode forming area and then drying the doped silicon nano ink;
A doping layer forming step of forming a doping layer by diffusing and heat-treating the silicon substrate in a diffusion furnace; And
And an oxide removing step of removing the oxide generated in the doping layer forming step. ≪ RTI ID = 0.0 > 11. < / RTI >
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020150044900A KR101642271B1 (en) | 2015-03-31 | 2015-03-31 | Method for Manufacturing Dopant Doped Silicon Nano Material and Local Doping Method thereof |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020150044900A KR101642271B1 (en) | 2015-03-31 | 2015-03-31 | Method for Manufacturing Dopant Doped Silicon Nano Material and Local Doping Method thereof |
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| KR101642271B1 true KR101642271B1 (en) | 2016-07-25 |
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| KR1020150044900A KR101642271B1 (en) | 2015-03-31 | 2015-03-31 | Method for Manufacturing Dopant Doped Silicon Nano Material and Local Doping Method thereof |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2017217560A1 (en) * | 2016-06-13 | 2017-12-21 | 주식회사 디씨티 | Method for manufacturing silicon nanomaterial doped with dopants and local doping method thereof |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20000003174A (en) * | 1998-06-26 | 2000-01-15 | 김영환 | Production method of thin film transistor |
| KR20040057031A (en) * | 2002-12-24 | 2004-07-01 | 한국전자통신연구원 | Apparatus and method for manufacturing silicon nanodot film capable of emitting light |
| KR20100132201A (en) * | 2009-06-09 | 2010-12-17 | (유)에스엔티 | Manufacturing system for solar cell |
| KR20150008223A (en) * | 2013-07-11 | 2015-01-22 | 대주전자재료 주식회사 | Silicon ink for a selective emitter of a solar cell, which comprises silicon nano-powders |
-
2015
- 2015-03-31 KR KR1020150044900A patent/KR101642271B1/en active IP Right Grant
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20000003174A (en) * | 1998-06-26 | 2000-01-15 | 김영환 | Production method of thin film transistor |
| KR20040057031A (en) * | 2002-12-24 | 2004-07-01 | 한국전자통신연구원 | Apparatus and method for manufacturing silicon nanodot film capable of emitting light |
| KR20100132201A (en) * | 2009-06-09 | 2010-12-17 | (유)에스엔티 | Manufacturing system for solar cell |
| KR20150008223A (en) * | 2013-07-11 | 2015-01-22 | 대주전자재료 주식회사 | Silicon ink for a selective emitter of a solar cell, which comprises silicon nano-powders |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2017217560A1 (en) * | 2016-06-13 | 2017-12-21 | 주식회사 디씨티 | Method for manufacturing silicon nanomaterial doped with dopants and local doping method thereof |
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