KR101908575B1 - Near-infrared absorbing glass and method for manufacturing same - Google Patents
Near-infrared absorbing glass and method for manufacturing same Download PDFInfo
- Publication number
- KR101908575B1 KR101908575B1 KR1020157027925A KR20157027925A KR101908575B1 KR 101908575 B1 KR101908575 B1 KR 101908575B1 KR 1020157027925 A KR1020157027925 A KR 1020157027925A KR 20157027925 A KR20157027925 A KR 20157027925A KR 101908575 B1 KR101908575 B1 KR 101908575B1
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- KR
- South Korea
- Prior art keywords
- light
- absorbing glass
- infrared ray
- near infrared
- ray absorbing
- Prior art date
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- 229910019142 PO4 Inorganic materials 0.000 claims description 10
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- -1 fluorine ions Chemical class 0.000 claims description 8
- 150000002500 ions Chemical class 0.000 claims description 6
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- 239000010409 thin film Substances 0.000 claims description 4
- LDDQLRUQCUTJBB-UHFFFAOYSA-O azanium;hydrofluoride Chemical compound [NH4+].F LDDQLRUQCUTJBB-UHFFFAOYSA-O 0.000 claims description 3
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- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 3
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- OJMIONKXNSYLSR-UHFFFAOYSA-N phosphorous acid Chemical compound OP(O)O OJMIONKXNSYLSR-UHFFFAOYSA-N 0.000 description 3
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- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 2
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- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
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- ASZZHBXPMOVHCU-UHFFFAOYSA-N 3,9-diazaspiro[5.5]undecane-2,4-dione Chemical compound C1C(=O)NC(=O)CC11CCNCC1 ASZZHBXPMOVHCU-UHFFFAOYSA-N 0.000 description 1
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- USFZMSVCRYTOJT-UHFFFAOYSA-N Ammonium acetate Chemical compound N.CC(O)=O USFZMSVCRYTOJT-UHFFFAOYSA-N 0.000 description 1
- 239000005695 Ammonium acetate Substances 0.000 description 1
- 241001507722 Apteronotus albifrons Species 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
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- KDYFGRWQOYBRFD-UHFFFAOYSA-N Succinic acid Natural products OC(=O)CCC(O)=O KDYFGRWQOYBRFD-UHFFFAOYSA-N 0.000 description 1
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- 229940043376 ammonium acetate Drugs 0.000 description 1
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- BFNBIHQBYMNNAN-UHFFFAOYSA-N ammonium sulfate Chemical compound N.N.OS(O)(=O)=O BFNBIHQBYMNNAN-UHFFFAOYSA-N 0.000 description 1
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- YOYLLRBMGQRFTN-SMCOLXIQSA-N norbuprenorphine Chemical compound C([C@@H](NCC1)[C@]23CC[C@]4([C@H](C3)C(C)(O)C(C)(C)C)OC)C3=CC=C(O)C5=C3[C@@]21[C@H]4O5 YOYLLRBMGQRFTN-SMCOLXIQSA-N 0.000 description 1
- 229920001778 nylon Polymers 0.000 description 1
- 150000007524 organic acids Chemical class 0.000 description 1
- 235000005985 organic acids Nutrition 0.000 description 1
- LXPCOISGJFXEJE-UHFFFAOYSA-N oxifentorex Chemical compound C=1C=CC=CC=1C[N+](C)([O-])C(C)CC1=CC=CC=C1 LXPCOISGJFXEJE-UHFFFAOYSA-N 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
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- 239000011698 potassium fluoride Substances 0.000 description 1
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- 239000004065 semiconductor Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000001509 sodium citrate Substances 0.000 description 1
- NLJMYIDDQXHKNR-UHFFFAOYSA-K sodium citrate Chemical compound O.O.[Na+].[Na+].[Na+].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O NLJMYIDDQXHKNR-UHFFFAOYSA-K 0.000 description 1
- 239000011775 sodium fluoride Substances 0.000 description 1
- 235000013024 sodium fluoride Nutrition 0.000 description 1
- PNGLEYLFMHGIQO-UHFFFAOYSA-M sodium;3-(n-ethyl-3-methoxyanilino)-2-hydroxypropane-1-sulfonate;dihydrate Chemical compound O.O.[Na+].[O-]S(=O)(=O)CC(O)CN(CC)C1=CC=CC(OC)=C1 PNGLEYLFMHGIQO-UHFFFAOYSA-M 0.000 description 1
- BFXAWOHHDUIALU-UHFFFAOYSA-M sodium;hydron;difluoride Chemical compound F.[F-].[Na+] BFXAWOHHDUIALU-UHFFFAOYSA-M 0.000 description 1
- 238000003980 solgel method Methods 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
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- 238000004544 sputter deposition Methods 0.000 description 1
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Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
- H01L27/1461—Pixel-elements with integrated switching, control, storage or amplification elements characterised by the photosensitive area
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C15/00—Surface treatment of glass, not in the form of fibres or filaments, by etching
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/20—Filters
- G02B5/208—Filters for use with infrared or ultraviolet radiation, e.g. for separating visible light from infrared and/or ultraviolet radiation
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/20—Filters
- G02B5/22—Absorbing filters
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14618—Containers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
- H01L27/14623—Optical shielding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
- H01L27/14649—Infrared imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
-
- H04N5/225—
-
- H04N5/359—
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2204/00—Glasses, glazes or enamels with special properties
- C03C2204/08—Glass having a rough surface
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2218/00—Methods for coating glass
- C03C2218/30—Aspects of methods for coating glass not covered above
- C03C2218/34—Masking
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Electromagnetism (AREA)
- Chemical & Material Sciences (AREA)
- Optics & Photonics (AREA)
- Geochemistry & Mineralogy (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Surface Treatment Of Glass (AREA)
- Optical Filters (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Optical Elements Other Than Lenses (AREA)
- Surface Treatment Of Optical Elements (AREA)
Abstract
Type infrared absorbing glass which has an incident surface on which light directed toward the solid-state image pickup device enters and an exit surface through which light is transmitted and which is emitted toward the solid-state image pickup device on its front and back sides and absorbs near- And a light scattering section formed so as to surround the outer periphery of the light transmitting section in a frame shape on at least one surface of the light transmitting section and the incident surface and the light emitting surface and for scattering a part of the light.
Description
The present invention relates to a near-infrared ray absorbing glass used for correcting visual sensitivity of a solid-state image pickup device, and a manufacturing method thereof.
Conventionally, solid-state image pickup devices such as CCDs and CMOSs have been used in digital still cameras and the like. Since such a solid-state image pickup device has spectral sensitivity ranging from the near-infrared range to the near-infrared range, the near-infrared ray portion of the incident light is cut by using the near-infrared ray absorbing glass to improve the color reproducibility by correcting the near- For example, Patent Document 1).
However, when such an optical component such as a near infrared ray absorbing glass is disposed on the front surface of an image pickup device, there arises a problem that flare or ghost occurs due to the light reflected from the side or the like of the near infrared ray absorbing glass being incident on the image pickup surface of the image pickup device.
In order to solve such a problem, a countermeasure for blocking an optical path of light which causes ghost or the like is effective. Conventionally, the surface or the back surface of an optical component such as a near-infrared absorbing glass is tinted (black coated) A countermeasure is taken to shield unnecessary light by attaching a film-shaped shielding member (see, for example, Patent Document 2).
In this way, when unnecessary light is shielded by using the shielding member, it is necessary to attach (or dispose) the shielding member with a very high positional accuracy so as not to shield the light incident through the normal optical path, And the near infrared ray absorbing glass is thickened by the thickness of the shielding member. In the work of attaching the light shielding member to the near infrared ray absorbing glass, there is a possibility that dust adheres to the surface of the near infrared ray absorbing glass or scratches may be caused. In addition, There is a possibility that the adhesive of the shielding tape may remain on the surface of the near infrared ray absorbing glass.
In addition, even in the case of shielding unnecessary light by black coating, it is necessary to coat it with a very high positional precision so as not to block the incident light passing through a normal optical path, so a very careful work is required, . Further, in the step of blackening, the surface of the near infrared ray absorbing glass is coated using a dedicated jig or the like. Since the jig or the like is in contact with the surface of the near infrared ray absorbing glass, Or adhesion of dust or the like may occur. In addition, depending on the coating material used, the thickness of the coating material may be uneven and the light shielding property may be uneven.
SUMMARY OF THE INVENTION The present invention has been made in view of such circumstances, and an object thereof is to provide a near infrared ray absorbing glass for a solid-state image pickup device capable of preventing black ghost or flare caused by unnecessary reflected light or stray light, And a method for producing the same.
In order to achieve the above object, the near infrared ray absorbing glass of the present invention is characterized in that the near infrared ray absorbing glass of the present invention has an incident surface on which light directed to the solid state image pickup element is incident and an outgoing surface on which light is transmitted and emitted toward the solid state image pickup element, A near-infrared absorbing plate in the form of a plate for absorbing a component, comprising: a light transmitting portion capable of transmitting light; and a light transmitting portion formed on at least one surface of the incident surface and the emitting surface so as to surround the outer periphery of the light transmitting portion in a frame shape, light scattering comprising a, and a near infrared absorbing glass is composed of a phosphate-based glass containing a non-phosphate-based glass, or Cu 2+ containing Cu 2+, the light scattering portion of the near infrared absorbing glass fluoride ions or fluorine-containing ions that And is an uneven surface formed by etching with a solution containing at least either one of them.
According to this configuration, since the light causing the ghost or the like incident on the near-infrared absorbing glass can be shielded by the light scattering portion, the ghost or flare caused by unnecessary reflected light or stray light can be blackened, It is possible to prevent it. Further, since the light shielding member and the like are not required, it is possible to suppress the dimension in the direction of the optical axis and also to prevent unnecessary reflection between the light shielding member and the glass surface.
It is preferable that the light scattering portion is formed on the side surface of the near-infrared absorbing glass from at least one of the incident surface and the exit surface. According to this configuration, unnecessary light incident from the side surface of the near-infrared absorbing glass can be blocked.
A first chamfer portion connecting the incident surface and the side surface may be formed between the incident surface and the side surface.
A second chamfered portion connecting the emitting surface and the side surface may be formed between the emitting surface and the side surface.
The solution is preferably a solution containing at least one of hydrogen fluoride, ammonium fluoride, and ammonium hydrogen fluoride. In this case, it is preferable that the solution is hydrofluoric acid containing 1 to 40% by weight of hydrogen fluoride. In this case, the light scattering portion is formed by immersing the near infrared absorbing glass in (1) hydrofluoric acid containing 5% by weight of hydrogen fluoride for 15 hours or more, (2) hydrofluoric acid containing 10% (3) immersing in hydrofluoric acid containing 15% by weight of hydrogen fluoride for 4 hours or more, or (4) immersing in hydrofluoric acid containing 20% by weight of hydrogen fluoride for 4 hours or more desirable.
The haze value of the light scattering portion is preferably 90 or more.
It is preferable that the area of the light transmitting portion is larger than the area of the light receiving surface of the solid-state imaging element.
The near-infrared absorbing glass may further comprise a functional film covering the light transmitting portion and the light scattering portion. In this case, the functional film is preferably an optical thin film having at least one function of antireflection, infrared cut, and ultraviolet cut.
It is preferable that the functional film includes an antireflection film having a film thickness of 90 nm to 300 nm.
It is preferable that the functional film includes an infrared cut film having a film thickness of 2000 nm to 6000 nm. In this case, the infrared cut film can also be configured to have an ultraviolet cut function.
Further, the near-infrared absorbing glass may be formed on at least a part of the light scattering portion, and may further include a light shielding layer that shields a part of the light. According to such a constitution, it is possible to reliably block light which causes ghost or the like which is incident on the near-infrared ray absorbing glass.
According to another aspect of the present invention, there is provided a method of manufacturing a near-infrared ray absorbing glass comprising a light-incident surface on which light toward a solid-state image sensor is incident and an outgoing surface through which light is transmitted toward the solid-state image sensor, in the production method of the near infrared absorbing glass plate on the absorbing a near-infrared component, a step of cutting a base material made of a phosphate glass containing a non-phosphate-based glass, or Cu 2+ containing Cu 2+ to a desired dimension and A step of chamfering the cut base material; a step of lapping the chamfered base material to a predetermined thickness; a step of polishing the front and back surfaces of the wrapped base material in a mirror-like shape; The light transmitting portion is formed and at least one surface of the front surface and the rear surface surrounds the outer periphery of the light transmitting portion in a frame shape, The key includes a step of forming a light scattering portion, a step of polishing the front and back surfaces of the substrate having the light transmitting portion and the light scattering portion formed thereon in mirror-like form, and the step of forming the light transmitting portion and the light scattering portion includes a step of masking the light transmitting portion And a step of etching the masked substrate, and the step of etching is characterized by etching the masked substrate with a solution containing at least one of fluorine ions and fluorine-containing ions.
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It is preferable that the step of etching is performed to 1 占 퐉 to 50 占 퐉 in the thickness direction of the substrate.
In the step of etching, the masked substrate is preferably immersed in hydrofluoric acid containing 1 to 40% by weight of hydrogen fluoride for a predetermined time. In this case, in the etching step, the masked substrate is immersed in (1) hydrofluoric acid containing 5% by weight of hydrogen fluoride for 15 hours or more, (2) hydrofluoric acid containing 10% (3) immersing in hydrofluoric acid containing 15% by weight of hydrogen fluoride for 4 hours or more, or (4) immersing in hydrofluoric acid containing 20% by weight of hydrogen fluoride for 4 hours or more.
As described above, according to the present invention, there is provided a near-infrared ray absorbing glass for a solid-state image pickup device capable of preventing ghosting or flare caused by unwanted reflected light or stray light by blackening or without separately providing a light shielding member and a method of manufacturing the same.
1 is a plan view of a near infrared ray absorbing glass according to a first embodiment of the present invention.
2 is a side view of the near infrared ray absorbing glass according to the first embodiment of the present invention.
3 is a longitudinal sectional view of a solid-state imaging device in which an opening of a package of the solid-state imaging element is sealed by the near-infrared absorbing glass according to the first embodiment of the present invention.
4 is a flowchart showing a manufacturing method of the near-infrared absorbing glass according to the first embodiment of the present invention.
5 is a side view of a near infrared ray absorbing glass according to a modification of the first embodiment of the present invention.
6 is a side view of a near infrared ray absorbing glass according to a modification of the first embodiment of the present invention.
7 is a side view of a near infrared ray absorbing glass according to a modification of the first embodiment of the present invention.
8 is a side view of a near infrared ray absorbing glass according to a second embodiment of the present invention.
Fig. 9 is a flowchart showing a manufacturing method of the near-infrared absorbing glass according to the second embodiment of the present invention.
BEST MODE FOR CARRYING OUT THE INVENTION Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. In the drawings, the same or corresponding parts are denoted by the same reference numerals, and description thereof is not repeated.
(First Embodiment)
1 is a plan view of a near infrared
As shown in Figs. 1 to 3, the near infrared
3, the near-infrared absorbing
As shown in Fig. 2, the near infrared
Between the surface of the
The
The transparent
The
Next, a manufacturing method of the near infrared
In brief, a glass plate as a raw material is prepared and cut to a predetermined size to obtain a
In the step of cutting the glass plate to a predetermined dimension (cutting step), a glass plate having a glass composition having desired optical characteristics is prepared, and the glass plate is cut by a known cutting method so that the outer size is substantially the same as the final shape. The cutting method includes a method of folding after cutting a cut line with a diamond cutter, and a method of cutting with a dicing device. The glass plate to be used in this step may be processed to a plate thickness dimension close to the final shape by rough polishing such as lapping. When the glass plate is cut, the
In the step of chamfering the outer circumferential surface of the glass substrate 20 (outer shaping step), eight ridges around the outer periphery of the
In the lapping process, the chamfered
In the primary polishing step, the surface of the wrapped
In the masking step, a predetermined glass etching photoresist is applied to both surfaces of the
In the etching step, the
In the mask removal step, the mask (etching resist film) formed on the
In the secondary polishing step, the surface of the
In the film formation step, the
As described above, according to the manufacturing method of the near infrared
<Effect confirmation experiment 1>
Next, an experiment for confirming the effect of the inventors of the present invention will be described in order to obtain etching conditions and the like for forming the
(Experimental Method)
First, near infrared absorbing glass (product name: CM5000, manufactured by HOYA CANDEO OPTRONICS, glass composition: glass of phosphite, dimension: L19.2 mm x W26.6 mm (glass substrate 20) × T0.58) was prepared. The near infrared absorbing glass was immersed in hydrofluoric acid (temperature 18 to 21 ° C) containing 9.8% by weight of HF for 15 hours and then subjected to shaking, naturally dried sample and hydrofluoric acid containing 19.8% by weight of HF To 21 占 폚) for 1 hour, 3 hours, 5 hours, and 15 hours, respectively, and then subjected to shaking, rinsing and naturally dried samples. The
(Assessment Methods)
The transmittance T (%), the reflectance R (%), the transmittance R (%) and the transmittance R (%) were determined for each mode in three modes (three states) from the viewpoints of color, , A haze value, and a surface roughness Ra (μm).
Then, from the obtained measurement results, it was specified that the
(Experiment result)
Table 1 shows the three modes of the
The transmittance T, the reflectance R, the haze value, and the surface roughness Ra of the
Table 2 shows the relationship between the conditions of the etching process and the ratio (occupancy) of the three modes of the
It can be seen from Table 2 that when the hydrofluoric acid having the same HF concentration (that is, hydrofluoric acid containing 19.8 wt% of HF) has a longer processing time (etching time) . It can be seen that the longer the treatment time is, the smaller the peeling area is, and the more stable the
From this result, it was found from the results that (1) the etching condition for 15 hours treatment with 9.8 wt% HF-containing hydrofluoric acid to obtain 100% of the
<Effect confirmation experiment 2>
As described above, the
(Experimental method and evaluation method)
As in the case of the effect confirmation experiment 1, near infrared absorbing glass (product name: CM5000, manufactured by HOYA CANDEO OPTRONICS, glass composition: glass of phosphite, dimension: L19.2 mm × W 26.6 mm × T 0.58) was prepared. The near infrared ray absorbing glass is immersed in hydrofluoric acid (temperature 18 to 21 DEG C) containing 5 wt% of HF, hydrofluoric acid (temperature 18 to 21 DEG C) containing 10 wt% And 6 hours, 8 hours, 10 hours, and 15 hours, respectively, to hydrofluoric acid (temperature 18 to 21 ° C) containing 20% by weight of water. The transmittance T (%), the reflectance R (%) and the haze value were measured for the
(Experiment result)
Table 3 shows the measurement results of the transmittance T (%) of the
When the transmittance T of the
(1) immersing in hydrofluoric acid containing 5% by weight of HF for 15 hours or more.
(2) Dipping in hydrofluoric acid containing 10% by weight of HF for 10 hours or more.
(3) immersing in hydrofluoric acid containing 15% by weight of HF for 4 hours or more.
(4) immersing in hydrofluoric acid containing 20% by weight of HF for 4 hours or more.
When the reflectance R of the
(1) immersing in hydrofluoric acid containing 5% by weight of HF for 15 hours or more.
(2) Dipping in hydrofluoric acid containing 10% by weight of HF for 10 hours or more.
(3) immersing in hydrofluoric acid containing 15% by weight of HF for 4 hours or more.
(4) immersing in hydrofluoric acid containing 20% by weight of HF for 4 hours or more.
In order to obtain the
From the above results, it can be seen that the use of hydrofluoric acid having a high HF concentration decreases the immersion time. This is due to the fact that the higher the concentration of the etching solution is, the faster the etching rate. However, when the concentration of the etching solution is excessively high, the etching rate becomes excessively high, which causes unevenness between the samples, resulting in a problem that a stable product can not be produced. On the other hand, when the concentration of the etching solution is excessively low, there is a problem that the immersion time becomes long and the production efficiency is lowered. Therefore, in consideration of the unevenness of the product and the production efficiency, it is preferable to use hydrofluoric acid containing 1 to 40% by weight of HF, and more preferably, hydrofluoric acid containing 2.5 to 30% by weight of HF is used.
The present invention is not limited to the above-described embodiment, and various modifications are possible within the scope of the technical idea of the present invention. For example, the
(Second Embodiment)
8 is a side view of the near infrared
8, the near infrared
The
Fig. 9 is a flowchart showing a manufacturing method of the near-infrared
As shown in Fig. 9, the manufacturing method of the near infrared
The printing process is a process of forming the
After the printing process, the
Thus, by providing the light-
Although the
It is also to be understood that the embodiments disclosed herein are illustrative in all respects and are not restrictive. It is intended that the scope of the invention be indicated by the appended claims rather than the foregoing description, and that all changes that fall within the meaning and range of equivalency of the claims are intended to be embraced therein.
Claims (26)
A light transmitting portion capable of transmitting the light,
A light scattering portion which is formed so as to surround the outer periphery of the light transmitting portion in a frame shape on at least one surface of the incident surface and the emission surface,
And,
The near infrared absorbing glass is composed of a phosphate-based glass containing a non-phosphate-based glass, or Cu 2+ containing Cu 2+,
Wherein the light scattering portion has a haze value of 90 or more and has a transmittance of 6.3% or less with respect to light having a wavelength of 400 to 700 nm, a reflectance of 0.8% or less,
Wherein the thickness of the light transmitting portion and the thickness of the light scattering portion are the same.
A step of cutting a base material made of a non-phosphate-based glass, or phosphate glass containing Cu 2+ containing Cu 2+ to a predetermined size and,
A step of chamfering the cut substrate,
Laminating the chamfered substrate to a predetermined thickness;
A step of polishing the front and back surfaces of the lapped base material in a mirror-
A light transmitting portion capable of transmitting the light is formed on a front surface and a back surface of the polished substrate and at least one surface of the front surface and the rear surface surrounds the outer periphery of the light transmitting portion in a frame shape, Forming a light scattering portion,
A step of polishing the front and back surfaces of the substrate having the light transmitting portion and the light scattering portion formed thereon in a mirror-
And,
Wherein the step of forming the light transmitting portion and the light scattering portion includes a step of masking the light transmitting portion and a step of etching the masked substrate,
Wherein the etching step comprises etching the masked substrate with a solution containing at least one of fluorine ions and fluorine-containing ions
Wherein the near infrared ray absorbing glass is produced by a method comprising the steps of:
(1) immersing in hydrofluoric acid containing 5% by weight of hydrogen fluoride for at least 15 hours,
(2) immersing in hydrofluoric acid containing 10% by weight of hydrogen fluoride for 10 hours or more,
(3) immersing in hydrofluoric acid containing 15% by weight of hydrogen fluoride for 4 hours or more, or
(4) immersing in hydrofluoric acid containing 20% by weight of hydrogen fluoride for 4 hours or more
Wherein the near infrared ray absorbing glass is produced by a method comprising the steps of:
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| JPJP-P-2013-076502 | 2013-04-01 | ||
| JP2013076502 | 2013-04-01 | ||
| PCT/JP2014/059460 WO2014163040A1 (en) | 2013-04-01 | 2014-03-31 | Near-infrared absorbing glass and method for manufacturing same |
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| KR20150138231A KR20150138231A (en) | 2015-12-09 |
| KR101908575B1 true KR101908575B1 (en) | 2018-10-17 |
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| JP (1) | JP5947976B2 (en) |
| KR (1) | KR101908575B1 (en) |
| CN (1) | CN105122453B (en) |
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| JP6312260B2 (en) * | 2014-11-02 | 2018-04-18 | Ｈｏｙａ Ｃａｎｄｅｏ Ｏｐｔｒｏｎｉｃｓ株式会社 | Optical element |
| JP2016149743A (en) | 2015-02-15 | 2016-08-18 | スカイワークス ソリューションズ, インコーポレイテッドSkyworks Solutions, Inc. | Power amplifier reduced in size through elimination of matching network |
| TWI597481B (en) * | 2015-12-22 | 2017-09-01 | 閤康生物科技股份有限公司 | Sample collection component and manufacturing method thereof |
| WO2017111091A1 (en) * | 2015-12-24 | 2017-06-29 | パナソニック株式会社 | Polishing liquid for glass and polishing method |
| JP2019507899A (en) * | 2016-01-21 | 2019-03-22 | スリーエム イノベイティブ プロパティズ カンパニー | Optical camouflage filter |
| US11269121B2 (en) | 2016-01-21 | 2022-03-08 | 3M Innovative Properties Company | Optical camouflage filters |
| CN106597590A (en) * | 2017-01-13 | 2017-04-26 | 广州市佳禾光电科技有限公司 | Low internal reflection composite base material and manufacturing method thereof |
| CN106851075A (en) * | 2017-03-31 | 2017-06-13 | 维沃移动通信有限公司 | A kind of processing method of camera case ring |
| JP6803018B2 (en) * | 2019-03-05 | 2020-12-23 | 株式会社Ｎｓｃ | Etching solution for glass and manufacturing method of glass substrate |
| DE102019120668A1 (en) * | 2019-07-31 | 2021-02-04 | Leica Camera Aktiengesellschaft | SENSOR UNIT |
| CN116354609B (en) * | 2023-03-08 | 2023-09-22 | 东莞市吉田光学玻璃有限公司 | Anti-dizziness treatment process for face recognition glass panel |
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| JP2008166632A (en) * | 2006-12-29 | 2008-07-17 | Manabu Bonshihara | Solid-state imaging apparatus, its manufacturing method and camera module |
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| JP2007099604A (en) | 2005-09-06 | 2007-04-19 | Hoya Corp | Near infrared ray absorbing glass, near infrared ray absorbing element provided with the same and imaging device |
| JP2008166632A (en) * | 2006-12-29 | 2008-07-17 | Manabu Bonshihara | Solid-state imaging apparatus, its manufacturing method and camera module |
| JP2010168262A (en) * | 2008-03-31 | 2010-08-05 | Asahi Glass Co Ltd | Tabular optical glass and method for processing end face of tabular optical glass |
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Also Published As
| Publication number | Publication date |
|---|---|
| JP5947976B2 (en) | 2016-07-06 |
| WO2014163040A1 (en) | 2014-10-09 |
| JPWO2014163040A1 (en) | 2017-02-16 |
| TW201504182A (en) | 2015-02-01 |
| TWI616420B (en) | 2018-03-01 |
| CN105122453A (en) | 2015-12-02 |
| KR20150138231A (en) | 2015-12-09 |
| CN105122453B (en) | 2018-08-10 |
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