KR101883391B1 - Silicone gaskets for surface mounting of electronic components manufacturing methods and the resulting silicon gasket over him - Google Patents

Abstract

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing a silicon gasket for a surface mounted electronic component and a silicon gasket obtained by the method. More particularly, the present invention relates to a silicone gasket for electronic parts having a buffering, contact and insulating function capable of surface mounting on a circuit board.
The configuration of the present invention includes a silicon preparation step (SlOO) having a nonconductive or conductive material;
And a second metal layer forming step (S400) of forming a second metal layer (40) by using any one of deposition, printing, and plating on one surface or both surfaces of the silicon (10).
Between the silicon preparation step (S100) and the second metal layer formation step (S400), a first metal layer (30) is formed on one surface or both surfaces of the silicon (10) by using any one of vapor deposition, A conductive layer 20 is formed by depositing or printing a conductive metal on one or both sides of the silicon 10 between the silicon preparation step S100 and the first metal layer formation step S300, (S200) of forming a conductive layer.
The first metal layer 30 may be formed of one of gold (Au), silver (Ag), nickel (Ni), nickel alloy, iron, tin, copper, iron and nickel alloy, iron and tin alloy, And the second metal layer 40 is formed using any one of gold (Au) and silver (Ag) by vapor deposition, printing, or plating.
The conductive layer 10 is formed with a hardness (hardness) value of 10 to 80 and an electrical resistance value, and the conductive layer 20 is formed by laminating nickel (Ni) on one surface or both surfaces of the silicon 10. [ is deposited or printed in the form of an island or a thin film.
The present invention also provides a silicone gasket for surface mount electronic parts manufactured by the above manufacturing method.

Description

TECHNICAL FIELD [0001] The present invention relates to a method of manufacturing a silicon gasket for surface mount electronic components, and a silicon gasket obtained through the method.

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing a silicon gasket for a surface mounted electronic component and a silicon gasket obtained by the method. More particularly, the present invention relates to a silicone gasket for electronic parts having a buffering, contact and insulating function capable of surface mounting on a circuit board.

An electric contact gasket (SMD) mounted on a general printed circuit board (PCB) or a flexible printed circuit (FPC) is electrically connected to a device such as a circuit board and an LCD (Liquid Crystal Display) And is used to connect mechanically.

For this purpose, the gasket must have excellent electrical conductivity, and there must be no change in physical properties due to high temperature ranging from 260 to 290 degrees in the reflow equipment, and the soldering must be easy. to be.

The gasket according to the conventional structure is formed by cutting a metal having a good elasticity, for example, a bellied copper foil, a stainless steel foil, a copper foil, etc. into a predetermined width and pressing it into a press mold, And mounted on a circuit board to conduct electricity.

However, since the conventional gasket is made of metal, urethane, sponge and silicon copper film, tolerance management is required. Therefore, the manufacturing process is difficult, and when the pressure exceeds the yield strength, Expensive mold cost is required and it is difficult to cut, so that the user can freely cut the required length and use it.

Therefore, in order to solve the above problems, conventionally, there has been developed a structure in which a solderable copper foil is attached to one side of a polygonal conductive silicone rubber or a polygonal conductive silicone rubber having only a conductive coating on the surface thereof and mounted on an electronic circuit board.

However, the above-described structure is produced by extruding a conductive metal powder such as silver or nickel into silicon. When a conductive metal powder is added in order to improve the conductivity, the elasticity of the silicone rubber is lowered, And when the conductive metal powder is placed in a small amount, there is a problem that the elasticity is improved but the electrical resistance is lowered.

In addition, there is a disadvantage that a separate copper foil is required to be attached to the electronic circuit board to attach the copper foil, and the expensive silver is used because the expensive silver is used. The conductive silicon is coated on the surface of the polygonal non- And the solderable copper foil is attached on one side, the raw material cost may be slightly reduced, but the above-mentioned problems still arise.

[Patent Document 1]. Korean Patent Registration No. 10-0762854. A ground foam gasket for mounting an electronic circuit board surface and a manufacturing method thereof (Registration date: September 21, 2007)

In order to solve the problems of the prior art as described above, the present invention simplifies the manufacturing process and structure by depositing, plating, and printing the conductive layer, the first metal layer, and the second metal layer on the nonconductive or conductive silicon, And to improve the cushioning and flexibility of the gasket located between the circuit board and the device.

It is another object of the present invention to provide a method of dry-plating a metal layer on silicon and wet-plating or printing a second metal layer, thereby simplifying the manufacturing process and configuration and increasing the electrical conductivity.

Another object of the present invention is to simplify the manufacturing process by wet-plating a metal layer of nickel (Ni), gold (Au), or silver (Ag) on silicon.

According to an aspect of the present invention,

A silicon preparation step (SlOO) having a non-conductive or conductive material;

And a second metal layer forming step (S400) of forming a second metal layer (40) by using any one of deposition, printing, and plating on one surface or both surfaces of the silicon (10).

Between the silicon preparation step (S100) and the second metal layer formation step (S400), a first metal layer (30) is formed on one surface or both surfaces of the silicon (10) by using any one of vapor deposition, A conductive layer 20 is formed by depositing or printing a conductive metal on one or both sides of the silicon 10 between the silicon preparation step S100 and the first metal layer formation step S300, (S200) of forming a conductive layer.

The first metal layer 30 may be formed of one of gold (Au), silver (Ag), nickel (Ni), nickel alloy, iron, tin, copper, iron and nickel alloy, iron and tin alloy, And the second metal layer 40 is formed using any one of gold (Au) and silver (Ag) by vapor deposition, printing, or plating.

The conductive layer 10 is formed with a hardness (hardness) value of 10 to 80 and an electrical resistance, and the conductive layer 20 is formed by laminating nickel (Ni) on one surface or both surfaces of the silicon 10 island or in the form of a thin film.

The present invention also provides a silicone gasket for surface mount electronic parts manufactured by the above manufacturing method.

According to the present invention, a metal layer is deposited, plated, and printed by dry plating and wet plating on a silicon surface, thereby simplifying the manufacturing process and construction, thereby reducing manufacturing costs and improving the durability of the gasket located between the circuit board and the device. The flexibility can be improved while the thickness can be minimized.

In addition, silicon is manufactured by adding nonconductive or conductive metal powder and made conductive silicon, and can be selectively used. It is mounted on a circuit board and electrically and mechanically connected to the device, and the device is stably buffered by elastic force .

In addition, nickel is deposited on the silicon surface, then nickel or gold is plated, or gold or silver is plated on the silicon surface, or deposition or printing, thereby improving the electrical conductivity and improving the satisfaction of the product There are also effects that can be improved.

BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a flow chart for explaining a method of manufacturing a silicon gasket according to the present invention. FIG.
2 is a perspective view illustrating a method of manufacturing a silicon gasket according to the present invention.
3 is a flowchart illustrating a method of manufacturing a silicon gasket according to another embodiment of the present invention.
4 is a perspective view illustrating a method of manufacturing a silicon gasket according to another embodiment of the present invention.
5 is a flowchart illustrating a method of manufacturing a silicon gasket according to another embodiment of the present invention.
6 is a perspective view illustrating a method of manufacturing a silicon gasket according to another embodiment of the present invention.

A manufacturing method of a silicon gasket for a surface-mounted electronic part of the present invention and a silicon gasket obtained therefrom are a silicone gasket for an electronic part having a buffering and contact function capable of surface mounting on a circuit board and located between a circuit board and a device, The present invention will be described in detail with reference to the accompanying drawings.

(Example 1)

1 and 2 illustrate a fabrication method for depositing and depositing a second metal layer 40 on one or both sides of a silicon 10 according to an embodiment of the present invention.

It is preferable that the silicon 10 in the silicon preparation step S100 has a hardness (hardness) value of 10 to 80 as a nonconductive or conductive material, and the conductive silicon 10 has an electrical resistance.

In addition, the silicon 10 is formed to have a thickness of 0.1 to 10 mm, so that the manufacturing cost can be reduced and sufficient flexibility and buffering effect can be obtained.

In the second metal layer formation step S400, gold (Au) is deposited on the surface of the silicon 10 by a sputtering method in a vacuum deposition process so as to have a thickness of 0.03 to 0.3 탆, Deposited in the form of islands or thin films on one or both sides.

At this time, silver (Ag) having a thickness of 1.6 to 4 탆 is deposited on the surface of the silicon (10) by a sputtering method in a vacuum deposition method, and islands are formed on one surface or both surfaces of the silicon (10) Or in the form of a thin film.

The second metal layer 40 may have a thickness of 0.03 to 0.3 mu m on the surface of the silicon 10 in any one of the wet plating method and the dry plating method, To a thickness of 4.0 mu m may be laminated.

The second metal layer 40 may be formed by laminating and printing on the surface of the silicon 10 using any one of gold (Au) and silver (Ag) so as to have a thickness of 1.6 to 20 탆.

Although gold (Au) and silver (Ag) are described in the present invention, it is also possible to deposit, plate and print using any one of tin, tin and lead alloys.

As described above, it is preferable that the silicon gasket in which the second metal layer 40 is laminated on the silicon 10 is formed in a plate shape and has a contact resistance of 0.1 OMEGA or less, and the silicon gasket formed in the above- (S500), and the shape-processed silicon gasket is inspected (S600) and then packaged (S700).

(Example 2)

3 and 4 are cross-sectional views illustrating a manufacturing method of depositing a first metal layer 30 and a second metal layer 40 on one surface or both surfaces of a silicon substrate 10 by vapor deposition, plating, or printing according to another embodiment of the present invention As follows.

It is preferable that the silicon 10 in the silicon preparation step S100 has a hardness (hardness) value of 10 to 80 as a nonconductive or conductive material, and the conductive silicon 10 has an electrical resistance.

In addition, the silicon 10 is formed to have a thickness of 0.1 to 10 mm, so that the manufacturing cost can be reduced and sufficient flexibility and buffering effect can be obtained.

In the first metal layer forming step S300, gold (Au) is deposited on the surface of the silicon 10 by a sputtering method in a vacuum deposition process so as to have a thickness of 0.03 to 0.3 탆, Deposited in the form of islands or thin films on one or both sides.

At this time, silver (Ag) having a thickness of 1.6 to 4 탆 is deposited on the surface of the silicon 10 by a sputtering method in a vacuum deposition method, or nickel (Ni) is deposited to have a thickness of 1.6 to 5 탆. It is also possible to deposit by using a sputtering method in the vacuum deposition method and to deposit on the one side or both sides of the silicon 10 in the form of an island or a thin film.

The first metal layer 30 may have a thickness of 0.03 to 0.3 탆 on the surface of the silicon 10 in any one of the wet plating method and the dry plating method, To 4.0 mu m or nickel (Ni) having a thickness of 1.6 to 5.0 mu m.

The first metal layer 30 may be formed of a conductive ink containing any one of gold (Au), silver (Ag), and nickel (Ni) to have a thickness of 1.6 to 20 탆, And printing is performed evenly on the entire surface of the silicon 10 so as to improve adhesion performance with the second metal layer 40, which will be described later.

Although gold (Au), silver (Ag) and nickel (Ni) are described in the present invention, any one of nickel alloy, iron, tin, copper, iron and nickel alloys, iron and tin alloys, It is possible to deposit, plate and print using a material to have a thickness of 1.6 to 20 mu m.

Hereinafter, the description of the second metal layer forming step S400 and the second metal layer 40 is the same as that of the first embodiment described above.

As described above, it is preferable that the silicon gasket in which the silicon 10, the first metal layer 30, and the second metal layer 40 are laminated is formed in a plate shape and has a contact resistance of 0.1? Or less. The silicone gasket is press-molded in accordance with the required dimensions (S500), and the shape-processed silicon gasket is inspected (S600) and then packaged (S700).

(Example 3)

5 and 6 illustrate another embodiment of the present invention in which a conductive layer 20, a first metal layer 30 and a second metal layer 40 are formed on one side or both sides of a silicon substrate 10 by vapor deposition, A manufacturing method of stacking them in any one of them will be described as follows.

It is preferable that the silicon 10 in the silicon preparation step S100 has a hardness (hardness) value of 10 to 80 as a nonconductive or conductive material, and the conductive silicon 10 has an electrical resistance.

In addition, the silicon 10 is formed to have a thickness of 0.1 to 10 mm, so that the manufacturing cost can be reduced and sufficient flexibility and buffering effect can be obtained.

The conductive layer forming step S200 may be performed by depositing a conductive metal on one side or both sides of the silicon 10 between the silicon preparation step S100 and the first metal layer forming step S300 by vapor deposition, (Ni) is deposited on the surface of the silicon (10) by a sputtering method in a vacuum deposition process so as to have a thickness of 1.0 to 5.0 탆, thereby forming a conductive layer (20) 10 in the form of an island or a thin film on one side or both sides thereof.

The conductive layer 20 may be formed by laminating nickel (Ni) on the surface of the silicon 10 in a thickness of 1.0 to 5.0 탆 by any one of wet plating and dry plating, A conductive ink containing nickel (Ni) and having a predetermined thickness is formed on one or both sides of the silicon 10 by silk printing so as to be laminated on the silicon 10 so as to improve adhesion performance with the first metal layer 30, 10) Evenly print on the entire surface.

Although nickel (Ni) has been described in the present invention, the thickness of 1 to 20 탆 can be obtained by using any one of nickel alloy, iron, tin, copper, iron and nickel alloy, iron and tin alloy, It is possible to deposit, coat, and print such that it is provided.

The description of the second metal layer forming step S400 and the second metal layer 40 and the first metal layer forming step S300 and the first metal layer 30 are the same as those of the first and second embodiments The above contents shall be substituted.

As described above, it is preferable that the silicon gasket in which the silicon 10, the conductive layer 20, the first metal layer 30, and the second metal layer 40 are laminated has a plate shape and has a contact resistance of 0.1? The silicon gasket formed as described above is punched out according to the required dimensions (S500), and the shape-processed silicon gasket is inspected (S600) and then packaged (S700).

Thereafter, the punched silicon gasket is mounted on a circuit board and used.

Although the preferred embodiments of the present invention have been described for illustrative purposes, those skilled in the art will appreciate that various modifications, additions and substitutions are possible, without departing from the scope and spirit of the invention as disclosed in the accompanying claims. .

10. Silicon 20. Conductive layer
30. First metal layer 40. Second metal layer
S100. Silicon preparation step
S200. Conductive layer formation step
S300. The first metal layer forming step
S400. The second metal layer forming step

Claims (10)

A silicon preparation step (SlOO) having a non-conductive or conductive material;
(S400) for forming a second metal layer (40) by using any one of deposition and printing on one side or both sides of the silicon (10);
The second metal layer 40 may be formed by depositing gold with a thickness of 0.03 to 0.3 탆 and forming silver by a point shape with a thickness of 1.6 to 4 탆, Or a conductive ink containing gold (Au) or silver (Ag) is formed by printing using a dot or thin film having a thickness of 1.6 to 20 탆. A method of manufacturing a gasket. A silicon preparation step (SlOO) having a non-conductive or conductive material;
A first metal layer forming step (S300) of forming a first metal layer (30) by using any one of deposition and printing on one surface or both surfaces of the silicon (10);
Forming a second metal layer (40) on the first metal layer (30) by using any one of deposition and printing (S400);
The first metal layer 30 may be formed by depositing gold in the form of a dot having a thickness of 0.03 to 0.3 mu m or may be formed by depositing in the form of a dot having a thickness of 1.6 to 4 mu m, Or a conductive ink containing any one of gold (Au), silver (Ag), and nickel (Ni) is formed by depositing nickel in a dot shape having a thickness of 1.6 to 5 탆, And forming a dot or thin film by printing and forming,
The second metal layer 40 may be formed by depositing gold with a thickness of 0.03 to 0.3 탆 and forming silver by a point shape with a thickness of 1.6 to 4 탆, Or a conductive ink containing gold (Ag) or silver (Ag) is formed by printing using a dot or thin film having a thickness of 1.6 to 20 탆. A method of manufacturing a gasket. A silicon preparation step (SlOO) having a non-conductive or conductive material;
A conductive layer forming step (S200) of forming a conductive layer (20) by using any one of vapor deposition and printing of a conductive metal on one side or both sides of the silicon (10);
A first metal layer forming step (S300) of forming a first metal layer (30) using any one of deposition and printing on the conductive layer (20);
Forming a second metal layer (40) on the first metal layer (30) by using any one of deposition and printing (S400);
The conductive layer 20 may be formed by depositing nickel (Ni) in a dot shape with a thickness of 1.0 to 5.0 탆 or by forming a conductive ink containing nickel (Ni) to a thickness of 1 to 20 탆 And printing is performed by using the above-
The first metal layer 30 may be formed by depositing gold in the form of a dot having a thickness of 0.03 to 0.3 mu m or may be formed by depositing in the form of a dot having a thickness of 1.6 to 4 mu m, Or a conductive ink containing any one of gold (Au), silver (Ag), and nickel (Ni) is formed by depositing nickel in a dot shape having a thickness of 1.6 to 5 탆, And forming a dot or thin film by printing and forming,
The second metal layer 40 may be formed by depositing gold with a thickness of 0.03 to 0.3 탆 and forming silver by a point shape with a thickness of 1.6 to 4 탆, Or a conductive ink containing gold (Ag) or silver (Ag) is formed by printing using a dot or thin film having a thickness of 1.6 to 20 탆. A method of manufacturing a gasket. The method of manufacturing a silicon gasket for a surface-mounted electronic part according to any one of claims 1 to 3, wherein the conductive silicon (10) is molded with a hardness (hardness) value between 10 and 80 and an electrical resistance . The first metal layer (30) according to claim 2 or 3, wherein the first metal layer (30) has a thickness of 0.03 to 4 탆 and is made of gold (Au), silver (Ag), nickel (Ni), nickel alloy, iron, tin, Wherein the metal layer is formed by depositing a material selected from the group consisting of nickel alloy, iron and tin alloy, and iron and copper alloy. delete delete delete delete A silicon gasket for surface-mounted electronic parts, which is produced according to any one of claims 1 to 5.

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