KR101872315B1 - Semiconductor light emitting device - Google Patents

Semiconductor light emitting device Download PDF

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Publication number
KR101872315B1
KR101872315B1 KR1020160177633A KR20160177633A KR101872315B1 KR 101872315 B1 KR101872315 B1 KR 101872315B1 KR 1020160177633 A KR1020160177633 A KR 1020160177633A KR 20160177633 A KR20160177633 A KR 20160177633A KR 101872315 B1 KR101872315 B1 KR 101872315B1
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South Korea
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electrode
semiconductor layer
semiconductor
reflective film
upper electrode
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KR1020160177633A
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Korean (ko)
Inventor
이성기
이성규
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주식회사 세미콘라이트
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Priority to KR1020160177633A priority Critical patent/KR101872315B1/en
Priority to PCT/KR2017/015220 priority patent/WO2018117680A2/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/10—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12041—LED
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0016—Processes relating to electrodes

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)

Abstract

A semiconductor light emitting device includes a first semiconductor layer having a first conductivity, a second semiconductor layer having a second conductivity different from the first conductivity, and a second semiconductor layer interposed between the first and second semiconductor layers, A plurality of semiconductor layers having active layers for generating light through recombination of the semiconductor layers; A non-conductive reflective film formed on the plurality of semiconductor layers to reflect light generated in the active layer toward the first semiconductor layer; A first electrode part electrically connected to the first semiconductor layer and supplying one of electrons and holes and a second electrode part electrically connected to the second semiconductor layer and supplying the remaining one of electrons and holes, Each of the first electrode unit and the second electrode unit includes: an upper electrode provided on the non-conductive reflective film; A lower electrode connected to one of the first semiconductor layer and the second semiconductor layer, and an electrical connection connecting the lower electrode and the upper electrode, wherein one of the first electrode portion and the second electrode portion comprises: And a branch electrode which is connected to the other upper electrode of the semiconductor light emitting device and has a concave portion which surrounds the branch electrode so that the upper electrode does not cover the branch electrode in a plan view.

Description

Technical Field [0001] The present invention relates to a semiconductor light emitting device,

This disclosure relates generally to semiconductor light emitting devices, and more particularly to semiconductor light emitting devices with improved performance.

Herein, the background art relating to the present disclosure is provided, and these are not necessarily meant to be known arts.

1 is a view showing an example of a semiconductor light emitting device disclosed in Korean Patent Publication No. 10-1611480.

The semiconductor light emitting device includes a substrate 310, a plurality of semiconductor layers 330 340 and 350, a buffer layer 320, a light absorption prevention film 341, a current diffusion conductive film 360, a nonconductive reflective film 391, a first upper electrode 375 A second upper electrode 385, a first electrical connection 373, a second electrical connection 383, a first lower electrode 371, and a second lower electrode 381.

In the case where the electrode is formed on the non-conductive reflective film 391, when the light exits from the non-conductive reflective film 391 to the air layer, the refractive index of the air layer is large, so that light is not reflected to the air layer from the non- However, although the light that is hitting the first upper electrode 375 and the second upper electrode 385 reflects light, a part of the light is absorbed and the reflection efficiency is lower than that of the air layer. As a result, the sizes of the first upper electrode 375 and the second upper electrode 385 are reduced to widen the area where the air layer and the non-conductive reflective film 391 contact each other.

2 is a view showing an example of a semiconductor light emitting device disclosed in Korean Patent Laid-Open No. 10-2011-0031099.

2A is a plan view of the light emitting device 201, FIG. 2B is a cross-sectional view taken along line A-A of FIG. 2A, and FIG. 2C is a cross-sectional view taken along the line B-B of FIG. The light emitting element 201 is provided with a transparent conductive layer 230 provided on the p-side contact layer 228 and a plurality of p-electrodes 240 provided on a part of the region on the transparent conductive layer 230. [ The light emitting element 201 is also provided with a plurality of n electrodes (not shown) provided on the n-side contact layer 222 exposed by the plurality of vias formed from the p-side contact layer 228 to the surface of at least the n-side contact layer 222 A lower insulating layer 250 provided on the inner surface of the via and the transparent conductive layer 230 and a reflective layer 260 provided inside the lower insulating layer 250 are provided. The reflective layer 260 is provided at a portion except the upper portion of the p-electrode 240 and the n-electrode 242. The lower insulating layer 250 contacting the transparent conductive layer 230 includes a via 250a extending in the vertical direction on each p electrode 240 and a via 250b extending in the vertical direction on each n electrode 242. [ ). A p wiring 270 and an n wiring 272 are provided on the lower insulating layer 250 in the light emitting element 201. [ The p wiring 270 includes a second planar conductive portion 2700 extending in the planar direction on the lower insulating layer 250 and a plurality of second planar conductive portions 2730 electrically connected to the respective p- And has a vertical conductive portion 2702. The n wiring 272 includes a first planar conductive portion 2720 extending in the planar direction on the lower insulating layer 250 and a via hole 250b formed in the lower insulating layer 250 and a via formed in the semiconductor laminated structure And a plurality of first vertical conductive portions 2722 electrically connected to the respective n-electrodes 242 through the first vertical conductive portions 2722. The light emitting element 201 is also provided with an upper insulating layer 280 provided on the lower insulating layer 250 contacting the p wiring 270, the n wiring 272 and the transparent conductive layer 230, Side junction electrode 290 electrically connected to the p-wiring 270 through the p-side opening 280a provided in the layer 280 and the n-side opening 280b provided in the upper insulating layer 280, An n-side junction electrode 292 electrically connected to the wiring 272 is provided.

This will be described later in the Specification for Implementation of the Invention.

SUMMARY OF THE INVENTION Herein, a general summary of the present disclosure is provided, which should not be construed as limiting the scope of the present disclosure. of its features).

According to one aspect of the present disclosure, in a semiconductor light emitting device, a first semiconductor layer having a first conductivity, a second semiconductor layer having a second conductivity different from the first conductivity, A plurality of semiconductor layers interposed between the first semiconductor layer and the second semiconductor layer and having an active layer that generates light through recombination of electrons and holes; A non-conductive reflective film formed on the plurality of semiconductor layers to reflect light generated in the active layer toward the first semiconductor layer; A first electrode part electrically connected to the first semiconductor layer and supplying one of electrons and holes and a second electrode part electrically connected to the second semiconductor layer and supplying the remaining one of electrons and holes, Each of the first electrode unit and the second electrode unit includes: an upper electrode provided on the non-conductive reflective film; A lower electrode connected to one of the first semiconductor layer and the second semiconductor layer, and an electrical connection connecting the lower electrode and the upper electrode, wherein one of the first electrode portion and the second electrode portion comprises: The semiconductor light emitting device according to the present invention includes: a semiconductor light emitting device including a first electrode and a second electrode;

This will be described later in the Specification for Implementation of the Invention.

1 is a view showing an example of a semiconductor light emitting device disclosed in Korean Patent Registration No. 10-1611480,
2 is a view showing an example of a semiconductor light emitting device disclosed in Korean Patent Laid-Open No. 10-2011-0031099,
3 is a view showing an example of a semiconductor light emitting device according to the present disclosure,
4 is a view showing another example of the semiconductor light emitting device according to the present disclosure,
5 is a view for explaining an example of a non-conductive reflective film according to the present disclosure,
6 is a view for explaining the reflection of light in the non-conductive reflective film and the connection electrode according to the present disclosure,
7 is a view showing still another example of the semiconductor light emitting device according to the present disclosure,
8 is a view showing still another example of the semiconductor light emitting device according to the present disclosure,
FIG. 9 is a sectional view taken along line E-E 'of FIG. 3,
10 is a view showing still another example of the semiconductor light emitting device according to the present disclosure,
11 is a view illustrating a non-conductive reflective film according to the present disclosure,
12 is a view showing still another example of the semiconductor light emitting device according to the present disclosure;

The present disclosure will now be described in detail with reference to the accompanying drawings.

An electrode was formed as shown in FIG. 2 to increase the reflection efficiency of light. However, it has been found that the reflection efficiency of light is further lowered, and it is found that the upper insulating layer and the lower insulating layer have a similar refractive index, and as shown in FIG. 1, the light is not reflected but transmitted.

3 is a view showing an example of a semiconductor light emitting device according to the present disclosure.

The semiconductor light emitting device includes a plurality of semiconductor layers 30, 40 and 50, a nonconductive reflective film 91, an insulating layer 95, a first electrode portion 75 and a second electrode portion 85. The first electrode unit 75 and the second electrode unit 85 may include lower electrodes 71 and 81, branch electrodes 98, connecting electrodes 72 and 82 and electrodes 101 and 102. The plurality of semiconductor layers 30, 40, and 50 include a first semiconductor layer 30, a second semiconductor layer 50, and an active layer 40. The first semiconductor layer 30 has a first conductivity and the second semiconductor layer 50 has a second conductivity. The active layer 40 is formed between the first semiconductor layer 30 and the second semiconductor layer 50 and generates light. The non-conductive reflective film 91 is formed on the plurality of semiconductor layers 30, 40, and 50 to reflect light generated in the active layer toward the first semiconductor layer 30, and may be formed of a dielectric. For example, the non-conductive reflective film 91 may be a distributed Bragg reflector. The insulating layer 95 is formed on the nonconductive reflective film 91. [ The insulating layer 95 may be a dielectric. For example, SiO2. The first electrode part 75 is electrically connected to the first semiconductor layer 30 and supplies one of electrons and holes. The second electrode part 85 is electrically connected to the second semiconductor layer 50 and supplies the remaining one of electrons and holes. At least one of the first electrode portion 75 and the second electrode portion 85 includes connecting electrodes 72 and 82. The connection electrodes 72 and 82 are formed between the non-conductive reflective film 91 and the insulating layer 95 and may cover at least 50% of the non-conductive reflective film 91. At this time, one of the connection electrodes 72 and 82 may cover at least 50% of the connection electrodes 72 and 82, and the sum of the areas of the connection electrodes 72 and 82 may cover at least 50% of the non-conductive reflection film 91. The connecting electrodes 72 and 82 may be formed of metal. For example, Cr, Ti, Ni, Au, Ag, TiW, Pt, Al or the like. Generally, when the lower electrodes 71 and 81, the branched electrodes 98, the connecting electrodes 72 and 82, the upper electrodes 101 and 102 are formed on the semiconductor light emitting device, they are formed of a plurality of metal layers. The lowermost layer should have a high bonding force with the adhesive surface, and materials such as Cr and Ti are mainly used, and Ni, Ti, TiW and the like can also be used, and there is no particular limitation. For the top layer, Au is used for wire bonding or connection with external electrodes. When Ni, Ti, TiW, W or the like is used in accordance with the required specification between the lowest and the uppermost layers in order to reduce the amount of Au and to complement the characteristics of Au, , Al, Ag and the like are used.

The connection electrode 82 of the second electrode unit 85 preferably forms a plurality of openings 99 and the connection electrode 72 of the first electrode unit 75 is provided in the plurality of openings 99 . At least one of the first electrode portion 75 and the second electrode portion 85 may include a branch electrode 98. The branched electrodes 98 are formed between the plurality of semiconductor layers 30, 40 and 50 and the non-conductive reflective film 91, and the branched electrodes 98 and the connecting electrodes 72 and 82 can be electrically connected.

The refractive index of the insulating layer 95 covering the non-conductive reflective film 91 is similar to the refractive index of the non-conductive reflective film 91, and is not reflected but transmitted well. Therefore, a part of the light which is not reflected by the non-conductive reflective film 91 passes through the insulating layer 95, which results in a problem that the light efficiency is lowered. Thus, light passing through the insulating layer 95 is entirely covered by the connecting electrodes 72 and 82 over the non-conductive reflecting film 91, so that the light exiting the insulating layer 95 is reflected. For example, the connection electrode 82 of the second electrode portion 85 entirely covers the non-conductive reflective film 91. At this time, it is preferable that the opening 99 formed by the second electrode part 85 is formed, and that the first electrode part 75 can pass through the opening 99. The first electrode part 75 may or may not have the connecting electrode 72. The first electrode part 75 may be formed as a plurality of islands in the plurality of openings 99 of the connection electrode 82 of the second electrode part 85 when the first electrode part 75 has the connection electrode 72. [ The number of islands of the connection electrodes 72 provided in the openings 99 can be determined according to the number of the openings 99 in the connection electrode 82 formed on the non-conductive reflective film 91. It is preferable that only the first electrode part 75 is formed in the opening 99 of the second electrode part 85. When the first electrode part 75 forms the opening 99 on the nonconductive reflective film 91, only the second electrode part 85 is formed in the opening 99 of the first electrode part 75 desirable.

 Therefore, a part of the light not reflected by the non-conductive reflective film 91 is also reflected by the connection electrodes 72 and 82, so that the light extraction efficiency is enhanced by coming out of the semiconductor light emitting device.

4 is a view showing another example of the semiconductor light emitting device according to the present disclosure.

4 (a) is an example in which one of the connecting electrodes 72 and 82 covers over the non-conductive reflective film 91 to a plurality of islands by 50% or more. The connection electrode 72 of the first electrode unit 75 forms a plurality of islands and the connection electrode 82 of the second electrode unit 85 does not completely surround the first electrode unit 75 So that one side can be connected as shown in Fig. 4 (a). In addition, the connection electrode 82 of the second electrode unit 85 may be formed of a plurality of islands.

4 (b) shows that one of the connecting electrodes 72 and 82 forms a plurality of islands, covering at least 50% of the non-conductive reflecting film 91 over a plurality of islands, and the other of the connecting electrodes 72 and 82 Is an example of wrapping a plurality of islands. The connection electrode 72 of the first electrode unit 75 forms a plurality of islands and the connection electrode 82 of the second electrode unit 85 forms a plurality of openings 99. The islands are provided in the plurality of openings 99, and the plurality of islands cover at least 50% on the non-conductive reflective film 91.

5 is a view for explaining an example of a non-conductive reflective film included in the semiconductor light emitting device according to the present disclosure.

The non-conductive reflective film 91 may be composed of a single dielectric layer or may have a multilayer structure. In this example, the non-conductive reflective film 91 is formed of a non-conductive material in order to reduce light absorption by the metal reflective film, and the non-conductive reflective film 91 includes a dielectric film 91b, a distributed Bragg reflector 91a (Distributed Bragg Reflector) and a clad film 91c.

In forming the semiconductor light emitting device according to this embodiment, a height difference is caused by the structure such as the lower electrodes 71 and 81 (see FIG. 3). Therefore, by forming the dielectric film 91b having a certain thickness prior to the deposition of the distribution Bragg reflector 91a requiring precision, it is possible to stably manufacture the distribution Bragg reflector 91a and also to help the reflection of light You can give.

The material of the dielectric film 91b is suitably SiO2, and the thickness thereof is preferably 0.2 mu m to 1.0 mu m. If the thickness of the dielectric film 91b is too thin, it may be insufficient to cover the lower electrodes 71 and 81 having a height of about 2 to 3 micrometers. If the dielectric film 91b is too thick, It can be a burden. The thickness of the dielectric film 91b may be thicker than the thickness of the subsequent distributed Bragg reflector 91a. Further, the dielectric film 91b needs to be formed by a method that is more suitable for ensuring reliability of the device. For example, it is preferable that the dielectric film 91b made of SiO2 is formed by chemical vapor deposition (CVD), in particular, plasma enhanced CVD (PECVD). This is because chemical vapor deposition is more advantageous than physical vapor deposition (PVD) such as electron beam evaporation (E-Beam Evaporation) in step coverage. Specifically, when the dielectric film 91b is formed by E-Beam Evaporation, the dielectric film 91b is hardly formed in the designed thickness in the height difference region, and the reflectance of light may be lowered , There may be a problem in electrical insulation. Therefore, it is preferable that the dielectric film 91b is formed by a chemical vapor deposition method for reducing the height difference and ensuring insulation. Therefore, it is possible to secure the function of the reflective film while securing the reliability of the semiconductor light emitting element.

The distribution Bragg reflector 91a is formed on the dielectric film 91b. The distribution Bragg reflector 91a is formed, for example, by laminating pairs of SiO2 and TiO2 a plurality of times. In addition, the distributed Bragg reflector 91a may be made of a combination of a high refractive index material such as Ta2O5, HfO, ZrO, SiN, etc. and a dielectric thin film (typically SiO2) having a lower refractive index. For example, the distributed Bragg reflector 95a may be made of a repetitive lamination of SiO2 / TiO2, SiO2 / Ta2O2, or SiO2 / HfO, where SiO2 / TiO2 has good reflection efficiency for blue light and SiO2 / Ta2O2, or SiO2 / HfO will have a good reflection efficiency. When the distributed Bragg reflector 91a is made of SiO2 / TiO2, the optimization process is performed in consideration of the incident angle and the reflectance depending on the wavelength based on the optical thickness of 1/4 of the wavelength of the light emitted from the active layer 40 , And it is not necessary that the thickness of each layer necessarily keep the optical thickness of 1/4 of the wavelength. The number of combinations is 4 to 40 pairs. In the case where the distributed Bragg reflector 91a has a repetitive layer structure of SiO2 / TiO2, the distributed Bragg reflector 91a is formed by physical vapor deposition (PVD), in particular, E-Beam Evaporation or sputtering Sputtering) or thermal evaporation (thermal evaporation).

The clad film 91c may be made of a metal oxide such as Al2O3, a dielectric film 91b such as SiO2, SiON, MgF, CaF, or the like. It is preferable that the clad film 91c has a thickness of lambda / 4n to 3.0 um. Where lambda is the wavelength of the light generated in the active layer 40 and n is the refractive index of the material forming the clad film 91c. and 4500/4 * 1.46 = 771A or more when? is 450 nm (4500 A).

Considering that the uppermost layer of the distributed Bragg reflector 91a made of a large number of pairs of SiO2 / TiO2 may be made of TiO2, if it is considered that the uppermost layer of the distributed Bragg reflector 91a can be made of a SiO2 layer having a thickness of? / 4n, Is preferably thicker than? / 4n so as to be differentiated from the uppermost layer of the distribution Bragg reflector 91a to be located. However, it is not only burdensome to the subsequent opening forming process, but also increases the thickness because the cladding film 91c can increase the material cost without contributing to the improvement of the efficiency. Therefore, in order not to burden the subsequent process, it is appropriate that the maximum value of the thickness of the clad film 91c is formed within 1 mu m to 3 mu m. However, in some cases it is not impossible to form more than 3.0 μm.

It is preferable that the effective refractive index of the first distributed Bragg reflector 91a is larger than the refractive index of the dielectric film 91b for light reflection and guidance. When the distributed Bragg reflector 91a and the upper electrodes 101 and 102 are in direct contact with each other, a part of the light traveling through the distributed Bragg reflector 91a can be absorbed by the upper electrodes 101 and 102. [ Therefore, when the clad film 91c having a refractive index lower than that of the distributed Bragg reflector 91a is introduced, the light absorption by the upper electrodes 101 and 102 can be greatly reduced. When the refractive index is selected in this way, the dielectric film 91b-distributed Bragg reflector 91a-clad film 91c can be described in terms of an optical waveguide. The optical waveguide is a structure for guiding light by surrounding the propagating portion of the light with a material having a lower refractive index than that of the light guiding portion. From this viewpoint, the dielectric film 91b and the clad film 91c can be seen as a part of the optical waveguide as a configuration surrounding the propagating portion, when the distributed Bragg reflector 91a is regarded as a propagation portion.

For example, when the distributed Bragg reflector 91a is formed of a light-transmissive material (e.g., SiO2 / TiO2) to prevent absorption of light, the dielectric film 91b is formed such that the refractive index is smaller than the effective refractive index of the distributed Bragg reflector 91a Dielectric (e.g., SiO2). Here, the effective refractive index means an equivalent refractive index of light that can travel in a waveguide made of materials having different refractive indices. The clad film 91c may also be made of a material (e.g., Al2O3, SiO2, SiON, MgF, CaF) that is lower than the effective refractive index of the distributed Bragg reflector 91a. In the case where the distribution Bragg reflector 91a is made of SiO2 / TiO2, the refractive index of SiO2 is 1.46 and the refractive index of TiO2 is 2.4, so that the effective refractive index of the distributed Bragg reflector is between 1.46 and 2.4. Therefore, the dielectric film 91b may be made of SiO2, and the thickness of the dielectric film 91b is suitably from 0.2 mu m to 1.0 mu m. The clad film 91c may also be formed of SiO2 having a refractive index of 1.46 which is smaller than the effective refractive index of the distributed Bragg reflector 91a.

The dielectric film 91b may be omitted from the viewpoint of the entire technical idea of the present disclosure and it is also possible to consider the configuration of the distributed Bragg reflector 91a and the clad film 91c There is no reason to exclude. The dielectric Bragg reflector 91a may be replaced with a dielectric film 91b made of TiO2, which is a dielectric material. In the case where the distributed Bragg reflector 91a has the SiO2 layer as the uppermost layer, it is also conceivable to omit the clad film 91c. If the dielectric film 91b and the distributed Bragg reflector 91a are designed in consideration of the reflectance of light traveling substantially in the transverse direction, even if the distributed Bragg reflector 91a has the TiO2 layer as the uppermost layer, It is also possible to consider the case of omitting the step 91c.

Thus, the dielectric film 91b, the distributed Bragg reflector 91a, and the clad film 91c serve as a non-conductive reflective film 91 as a waveguide, and preferably have a total thickness of 1 to 8 um.

As illustrated in Fig. 5, the distribution Bragg reflector 91a has a higher reflectance as the light L3 that is closer to the vertical direction, and thus reflects more than 99%. However, the obliquely incident lights L1 and L2 pass through the distribution Bragg reflector 91a and are incident on the upper surface of the clad film 91c or the nonconductive reflective film 91 and are not covered by the upper electrodes 101 and 102 (L1), the light L2 incident on the upper electrodes 101 and 102 is partially absorbed.

6 is a view for explaining the reflection of light in the non-conductive reflective film and the connecting electrode according to the present disclosure.

Some of the light emitted from the active layer 40 (see FIG. 3) is emitted toward the non-conductive reflective film 91. The emitted light is reflected by the non-conductive reflective film 91, and partly passes through without reflection (L1). This is because light emitted toward the insulating layer 95 is likely to escape from the non-conductive reflective film 91 to the insulating layer 95 because the refractive indexes of the insulating layer 95 and the non-conductive reflective film 91 are similar. The connection electrodes 72 and 82 are formed so as to cover most of the non-conductive reflective film 91 to reflect light toward the plurality of semiconductor layers in order to prevent light escaping to the insulating layer 95 side.

7 is a view showing still another example of the semiconductor light emitting device according to the present disclosure.

3) is divided into a first connection electrode 112 and a first lower electrical connection 113 and a connection electrode 82 (refer to FIG. 3) is connected to a second connection electrode 122 And a second lower electrical connection 123 are described. The upper electrode 101 and the lower electrode 71 of the first electrode unit 75 are referred to as the first upper electrode 101 and the first lower electrode 71 and the upper electrode 101 of the second electrode unit 85, The upper electrode 102 and the lower electrode 81 are referred to as a second upper electrode 102 and a second lower electrode 81, respectively.

7 (a) is a view showing a semiconductor light emitting element seen on a plan view.

The first electrode unit 75 includes a first upper electrode 101, a first connection electrode 112, a first lower electrode 71 and a first lower electrical connection 113, and the second electrode unit 85 Includes a second upper electrode 102, a second connection electrode 122, a second lower electrode 81, and a second lower electrical connection 123.

The first upper electrode 101 is provided on the insulating layer 95 and has a first conductivity. The first connection electrode 112 is formed between the non-conductive reflective film 91 and the insulating layer 95 and is electrically connected to the first upper electrode 101. The first lower electrode 71 is electrically connected to the first semiconductor layer 30 and may contact the first semiconductor layer 30. The first lower electrical connection 113 connects the first lower electrode 71 and the first connection electrode 112.

The second upper electrode 102 is provided on the insulating layer 95 and has a second conductivity. The second connection electrode 122 is formed between the non-conductive reflective film 91 and the insulating layer 95 and is electrically connected to the second upper electrode 102. The second lower electrode 81 is electrically connected to the second semiconductor layer 50 and may contact the second semiconductor layer 50. The second lower electrical connection 123 connects the second lower electrode 81 and the second connection electrode 122.

The first upper electrode 101 may be formed in a plan view avoiding the second lower electrical connection 123 and the second upper electrode 102 may be formed by avoiding the first lower electrical connection 113 .

The first upper electrode 101 may be formed to avoid the second connection electrode 122 and the second upper electrode 102 may be formed by avoiding the first connection electrode 112 on the plan view . The reason for this will be described in detail in Fig.

A distance D1 between the first upper electrode 101 and the second lower electrical connection 123 on the plan view and a distance D2 between the second upper electrode 102 and the first lower electrical connection 113 At least one may have an interval. For example, the distance D1 between the first upper electrode 101 and the second lower electrical connection 123 on the plan view and the distance D2 between the second upper electrode 102 and the first lower electrical connection 113 ) May have an interval of 15um or more because they are formed with a margin due to the photoresist process. If the distances D1 and D2 are formed apart, the insulation effect can be obtained. At least one of the distance D1 between the first upper electrode 101 and the second lower electrical connection 123 and the distance D2 between the second upper electrode 102 and the first lower electrical connection 113 Can be kept constant. This is because the distance D1 between the first upper electrode 101 and the second lower electrical connection 123 and the distance D2 between the second upper electrode 102 and the first lower electrical connection 113 must be constant Electrostatic discharge, and electrical overstress performance can be improved.

7 (b) is a cross-sectional view taken along the line D-D 'in FIG. 7 (a).

The first lower electrical connection 113 and the first connection electrode 112 do not exist under the second upper electrode 102 having the second conductivity as shown in FIG. 7 (b).

8 is a view showing still another example of the semiconductor light emitting device according to the present disclosure.

The first upper electrode 101 forms an opening 131 and the second lower electrical connection 123 is provided in the opening 131 of the first upper electrode 101 or the second upper electrode 102 forms the opening 131, And the first lower electrical connection 113 is formed in the opening 132 of the second upper electrode 102. The first lower electrical connection 113 is formed in the opening 132 of the second upper electrode 102. [

The distance D2 between the second lower electrical connection 123 and the first upper electrode 101 provided in the opening 131 of the first upper electrode 101 and the distance D2 between the opening 132 of the second upper electrode 102, At least one of the distance D1 between the first lower electrical connection 113 and the second upper electrode 102 may be spaced apart. A distance D2 between the second lower electrical connection 123 provided in the opening 131 of the first upper electrode 101 and the first upper electrode 101 and a distance D2 between the first upper electrode 101 and the second upper electrode 102, At least one of the distance D1 between the first lower electrical connection 113 and the second upper electrode 102 provided in the opening 132 may be reduced by 15um or more because it is formed with a margin due to the photoresist process to be. The distance D2 between the first upper electrode 101 and the second lower electrical connection 123 and the distance D1 between the second upper electrode 102 and the first lower electrical connection 113 are constant Can be maintained. This is because the distance D2 between the first upper electrode 101 and the second lower electrical connection 123 and the distance D1 between the second upper electrode 102 and the first lower electrical connection 113 are constant, (Electrostatic discharge) and electrical overload (power overload) performance can be improved.

9 is a cross-sectional view taken along the line E-E 'in Fig.

The first lower electrical connection 113 and the second lower electrical connection 123 may be formed to protrude from the upper surface of the nonconductive reflective film 91 or be formed to be recessed from the upper surface of the non- . When the first lower electrical connection 113 and the second lower electrical connection 123 are formed by being depressed or protruded, the insulating layer 95 or the non-conductive reflective film 95 is distorted and deposited to form the insulating layer 95, A crack may be generated in the conductive reflective film 91. [ A material for forming the second upper electrode 102 may be contained in a crack and the first electrode portion 75 and the second electrode portion 85 may be electrically connected to each other to cause a short circuit. A short may occur between the first electrode portion 75 and the second electrode portion 85 due to the distance between the second upper electrode 102 and the first lower electrical connection 123, The first upper electrode 101 may be formed to avoid the second lower electrical connection 123 and the second upper electrode 102 may be formed to avoid the first lower electrical connection 113. [

10 is a view showing still another example of the semiconductor light emitting device according to the present disclosure.

10 (a) is a plan view, and FIGS. 10 (b) and 10 (c) are cross-sectional views taken along line F-F 'and G-G' in FIG. 10 (a).

The semiconductor light emitting device includes a plurality of semiconductor layers 430, 450 and 450, a non-conductive reflective film 480, a first electrode portion 470, and a second electrode portion 490.

The plurality of semiconductor layers 430, 450 and 450 includes a first semiconductor layer 430, a second semiconductor layer 450, and an active layer 440. The first semiconductor layer 430 has a first conductivity and the second semiconductor layer 450 has a second conductivity different from the first conductivity. The active layer 440 is formed between the first semiconductor layer 430 and the second semiconductor layer 450 and generates light through recombination of electrons and holes.

 The non-conductive reflective film 480 is formed on the plurality of semiconductor layers 430, 450, and 450, and reflects light generated in the active layer 440 toward the first semiconductor layer 430.

The first electrode part 470 is electrically connected to the first semiconductor layer 430 and supplies one of electrons and holes and the second electrode part 490 is electrically connected to the second semiconductor layer 450 , And supplies the remaining one of the electrons and the holes. The first electrode unit 470 includes a first upper electrode 471, a first lower electrode 473, a first branched electrode 474 and a first lower electrical connection 475, and the second electrode unit 490 Includes a second upper electrode 491, a second lower electrode 493, a second branched electrode 494, and a second lower electrical connection 495.

The first upper electrode 471 is formed while avoiding the second branched electrode 494 and the second upper electrode 491 is formed while avoiding the first branched electrode 474. [ The first upper electrode 471 may be formed to avoid the second branched electrode 494 and the second upper electrode 491 may be formed to avoid the first branched electrode 474. That is, the first upper electrode 471 is provided with the recesses 472 and 492 so as to surround the second branched electrodes 494 without covering them.

The non-conductive reflective film 480 on the first branch electrode 474 may be formed so as to be recessed lower than the periphery as shown in FIG. 10 (b). This is called a groove 481. A crack is generated at the side portion 483 of the groove portion 481. Therefore, the second upper electrode 491 is formed to avoid the groove 481. [ A crack is formed between the first branched electrode 474 and the second upper electrode 491. The second upper electrode 291 is not formed on the upper surface of the non-conductive reflective film 480 where the first branched electrodes 474 are formed, and the non-conductive reflective film 480 is exposed. As a result, the first branch electrode 474 and the second upper electrode 291 are not short-circuited through the cracks. Details will be described with reference to FIG.

A first branched electrode 474 is formed on the first semiconductor layer 430 of the plurality of semiconductor layers 430, 450 and 450 of FIG. 10B. The first branched electrode 474 is formed on the first semiconductor layer 430, A hole 477 is formed in the hole 477 and the first branched electrode 474 is formed in the hole 477 by being connected to the first semiconductor layer 430.

The non-conductive reflective film 480 on the second branched electrode 494 may be formed so as to protrude higher than the surroundings as shown in FIG. 10 (c). This is called a protrusion 482. A crack occurs at the side portion 483 of the protruding portion 482. Therefore, the first upper electrode 471 is formed to avoid the protrusion 482. [ A crack is formed between the second branched electrode 494 and the first upper electrode 471. The first upper electrode 271 is not formed on the upper surface of the non-conductive reflective film 480 where the second branched electrode 494 is formed, and the non-conductive reflective film 480 is exposed. As a result, the second branched electrode 494 and the first upper electrode 271 are not short-circuited through the crack. Details will be described with reference to FIG.

A first upper electrode 471 and a second upper electrode 491 formed on the first branched electrode 474 and the second branched electrode 494 and the first branched electrode 474 and the second branched electrode 494 on the plan view, It is preferable that a distance d between 5 and 10 um is formed between the concave portions 492 of the light guide plate 51. [ This is because the first upper electrode 471 and the second upper electrode 491 may be formed in the trench 481 and the protruding portion 482 at a distance of 5 m or less and the first upper electrode 471 And the size of the second upper electrode 491 can be reduced.

11 is a view for explaining a non-conductive reflective film according to the present disclosure.

Fig. 11 (a) is an enlarged view of a portion H in Fig. 10 (b), Fig. 11 (b) is an enlarged view of a portion I in Fig. 10 (F-F ') of FIG.

The non-conductive reflective film 480 is formed of a plurality of layers as shown in FIG. The non-conductive reflective film 480 is stacked on the plurality of semiconductor layers 430, 450, and 450, and is formed along a shape in which a plurality of semiconductor layers 430, 450, and 450 are formed. The non-conductive reflective film 480 is unevenly piled up according to the surface shape of the plurality of semiconductor layers 430, 450, and 450. Therefore, the protruding portion 482 and the groove portion 481 may be formed on the non-conductive reflective film 480 on the branch electrodes 474 and 494. A crack may be generated in the side portion 483 of the protruding portion 482 of the non-conductive reflective film 480 or in the side portion 483 of the groove portion 481 when an impact is externally applied to the non-conductive reflective film 480, As shown in FIG. When the first upper electrode 471 or the second upper electrode 491 is formed on the crack, the material formed by the first upper electrode 471 and the second upper electrode 491 enters the crack and the first upper electrode 471, And the second lower electrode 473 are electrically connected to each other or the second upper electrode 491 and the first lower electrode 493 are electrically connected to each other. Therefore, the first upper electrode 471 and the second upper electrode 491 may be formed to avoid the cracks.

When the semiconductor light emitting device 400 is electrically connected to the external substrate after the first upper electrode 471 and the second upper electrode 491 are formed, for example, the solder 500 having a high temperature may be used. The solder 500 is formed on the first upper electrode 471 or the second upper electrode 491 while the first upper electrode 471 or the second upper electrode 491 is melted at a high temperature. At this time, since the solder 500 enters into the crack and can cause short-circuiting, it is preferable that the solder 500 is formed to avoid a portion where cracks are formed much. This is because the solder 500 is formed only on the first upper electrode 471 or the second upper electrode 491. The second upper electrode 491 or the first upper electrode 471 may be formed so as to avoid the first lower electrode 473 or the second lower electrode 493 having a different conductivity to form the first upper electrode 471, Even if the solder 500 is formed on the first upper electrode 491 and the second upper electrode 491.

11 (c) is a cross-sectional view taken along line F-F 'of 10 (a).

The height of the first branched electrode 474 may be higher than the depth of the hole 477. For example, the depth of the hole 477 from the upper surface of the plurality of semiconductor layers 430, 450 and 450 may be 1 to 2 um, and the height of the first branched electrode 474 within the hole 477 may be 1.5 to 2.5 um . Accordingly, the non-conductive reflective film 480 formed on the first branched electrode 474 can form the protruding portion 482. A crack may be formed on the side portion 483 of the protruding portion 482 toward the first branched electrode 474. [ Therefore, the second upper electrode 491 formed with the concave portion 492 surrounding the protruding portion 482 can be formed.

12 is a view showing still another example of the semiconductor light emitting device according to the present disclosure.

12 (a) is an example in which the second upper electrode 491 is formed with a concave portion 492 so as to surround the first branched electrode 474 by avoiding the first branched electrode 474, and FIG. 12 (b) 12B is an example in which the first upper electrode 471 is formed with the concave portion 472 to surround the second branched electrode 494 by the second branched electrode 494.

Various embodiments of the present disclosure will be described below.

(1) A semiconductor light emitting device comprising: a first semiconductor layer having a first conductivity; a second semiconductor layer having a second conductivity different from the first conductivity; and a second semiconductor layer interposed between the first and second semiconductor layers, A plurality of semiconductor layers having active layers for generating light through recombination of the semiconductor layers; A non-conductive reflective film formed on the plurality of semiconductor layers to reflect light generated in the active layer toward the first semiconductor layer; A first electrode part electrically connected to the first semiconductor layer and supplying one of electrons and holes and a second electrode part electrically connected to the second semiconductor layer and supplying the remaining one of electrons and holes, Each of the first electrode unit and the second electrode unit includes: an upper electrode provided on the non-conductive reflective film; A lower electrode connected to one of the first semiconductor layer and the second semiconductor layer, and an electrical connection connecting the lower electrode and the upper electrode, wherein one of the first electrode portion and the second electrode portion comprises: And a branch electrode connected to the other upper electrode of the semiconductor light emitting device, wherein the upper electrode has a concave portion surrounding the branch electrode so as not to cover the branch electrode.

(2) The semiconductor light emitting device according to any one of (1) to (3), wherein the upper electrode is formed so that a nonconductive reflective film is exposed on the branched electrode.

(3) The branched electrode is provided below the non-conductive reflective film.

(4) The non-conductive reflective film formed on the branch electrode includes at least one of a protruding portion protruding from the periphery and a groove portion lower than the peripheral portion, and the recess is formed to avoid at least one of the protruding portion and the groove portion.

(5) The first electrode portion includes: a groove formed in the plurality of semiconductor layers to expose the first semiconductor layer; and a first branched electrode provided in the groove and connected to the first semiconductor layer, A semiconductor light emitting device formed on an electrode.

(6) The second electrode portion includes: a second branched electrode connected to the second semiconductor layer, and the protruding portion is formed on the second branched electrode.

(7) The semiconductor light emitting device according to (7), wherein the concave portion is formed so as to have a distance between the branch electrode and 5 to 10 um.

(8) The semiconductor light emitting element in which the projecting portion and the groove portion have side portions, and cracks are generated in the side portions.

(9) the first electrode portion includes: a groove formed in the plurality of semiconductor layers to expose the first semiconductor layer; and a first branched electrode provided in the groove, the first branched electrode being connected to the first semiconductor layer, A semiconductor light emitting device formed on an electrode.

(10) The other upper electrode is formed so as to expose a non-conductive reflective film on the branched electrode, and the branched electrode is provided below the non-conductive reflective film. In the non-conductive reflective film formed on the branched electrode, at least a protruding portion protruding from the periphery, Wherein the first electrode part comprises: a groove formed in the plurality of semiconductor layers so that the first semiconductor layer is exposed; and a second electrode part provided in the groove, Wherein the groove portion is formed on the first branched electrode and the second electrode portion includes: a second branched electrode connected to the second semiconductor layer, the protruding portion being formed on the second branched electrode, The concave portion is formed so as to have a distance of 5 to 10 mu m from the branch electrode. The protruding portion and the groove portion have side portions, a crack is generated in the side portion, The semiconductor light emitting device is formed.

According to the present disclosure, there is provided a semiconductor light emitting element for preventing a short circuit by forming a concave portion in an upper electrode.

Further, according to the present disclosure, there is provided a semiconductor light emitting element for preventing a short circuit caused by solder.

Further, according to the present disclosure, there is provided a semiconductor light emitting element which prevents a short circuit by preventing solder from being formed in a portion where cracks are frequently generated.

According to the present disclosure, there is provided a semiconductor light emitting element which prevents a shot by forming a concave portion to avoid a groove portion or a protrusion portion.

Claims (10)

In the semiconductor light emitting device,
A first semiconductor layer having a first conductivity, a second semiconductor layer having a second conductivity different from the first conductivity, and an active layer disposed between the first and second semiconductor layers and generating light through recombination of electrons and holes, A plurality of semiconductor layers;
A non-conductive reflective film formed on the plurality of semiconductor layers to reflect light generated in the active layer toward the first semiconductor layer;
A first electrode part electrically connected to the first semiconductor layer and supplying one of electrons and holes,
And a second electrode part electrically connected to the second semiconductor layer and supplying the remaining one of electrons and holes,
Each of the first electrode portion and the second electrode portion includes:
An upper electrode provided on the non-conductive reflective film;
A lower electrode connected to one of the first semiconductor layer and the second semiconductor layer,
And an electrical connection for connecting the lower electrode and the upper electrode,
Wherein one of the first electrode portion and the second electrode portion comprises:
And a branch electrode connected to the lower electrode and extending toward another upper electrode of the semiconductor light emitting device,
In the plan view, the other upper electrode has a concave portion surrounding the branch electrode so as not to cover the branch electrode,
Wherein the non-conductive reflective film formed on the branched electrode includes at least one of a projection protruding from the periphery and a groove lower than the periphery,
The recess is formed to avoid at least one of the projection and the groove,
The protrusions and the grooves have side portions,
And a crack is generated in the side portion. The method according to claim 1,
And the other upper electrode is formed so that a non-conductive reflective film is exposed on the branched electrode. The method according to claim 1,
And the branched electrodes are provided under the nonconductive reflective film. delete The method according to claim 1,
The first electrode portion includes:
A groove formed in the plurality of semiconductor layers to expose the first semiconductor layer,
And a first branched electrode provided in the groove and connected to the first semiconductor layer,
And the groove portion is formed on the first branched electrode. The method according to claim 1,
The second electrode portion includes:
And a second branched electrode connected to the second semiconductor layer,
And the protruding portion is formed on the second branched electrode. The method according to claim 1,
Wherein the recess is formed so as to have a distance between the branch electrode and 5 to 10 mu m on the plan view. delete In the semiconductor light emitting device,
A first semiconductor layer having a first conductivity, a second semiconductor layer having a second conductivity different from the first conductivity, and an active layer disposed between the first and second semiconductor layers and generating light through recombination of electrons and holes, A plurality of semiconductor layers;
A non-conductive reflective film formed on the plurality of semiconductor layers to reflect light generated in the active layer toward the first semiconductor layer;
A first electrode part electrically connected to the first semiconductor layer and supplying one of electrons and holes,
And a second electrode part electrically connected to the second semiconductor layer and supplying the remaining one of electrons and holes,
Each of the first electrode portion and the second electrode portion includes:
An upper electrode provided on the non-conductive reflective film;
A lower electrode connected to one of the first semiconductor layer and the second semiconductor layer,
And an electrical connection for connecting the lower electrode and the upper electrode,
Wherein one of the first electrode portion and the second electrode portion comprises:
And a branch electrode connected to the lower electrode and extending toward another upper electrode of the semiconductor light emitting device,
In the plan view, the other upper electrode has a concave portion surrounding the branch electrode so as not to cover the branch electrode,
Wherein the non-conductive reflective film formed on the branched electrode includes at least one of a projection protruding from the periphery and a groove lower than the periphery,
The recess is formed to avoid at least one of the projection and the groove,
The first electrode portion includes:
A groove formed in the plurality of semiconductor layers to expose the first semiconductor layer,
And a first branched electrode provided in the groove and connected to the first semiconductor layer,
And the protruding portion is formed on the first branched electrode. delete
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20230116645A (en) 2022-01-28 2023-08-04 김관익 Business site safety inspection system using QR code
KR102647440B1 (en) 2023-03-31 2024-03-14 대한민국 Safety equipment identification gate device for workers and worker safety management system using the same

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Publication number Priority date Publication date Assignee Title
KR20150114112A (en) * 2014-03-31 2015-10-12 주식회사 세미콘라이트 Semiconductor light emitting device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20150114112A (en) * 2014-03-31 2015-10-12 주식회사 세미콘라이트 Semiconductor light emitting device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20230116645A (en) 2022-01-28 2023-08-04 김관익 Business site safety inspection system using QR code
KR102647440B1 (en) 2023-03-31 2024-03-14 대한민국 Safety equipment identification gate device for workers and worker safety management system using the same

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