KR101869149B1 - 외부 강자성 바이어싱 필름을 사용하는 전압 제어 자기 이방성 전환 디바이스 - Google Patents

외부 강자성 바이어싱 필름을 사용하는 전압 제어 자기 이방성 전환 디바이스 Download PDF

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KR101869149B1
KR101869149B1 KR1020160068948A KR20160068948A KR101869149B1 KR 101869149 B1 KR101869149 B1 KR 101869149B1 KR 1020160068948 A KR1020160068948 A KR 1020160068948A KR 20160068948 A KR20160068948 A KR 20160068948A KR 101869149 B1 KR101869149 B1 KR 101869149B1
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ferromagnetic layer
ferromagnetic
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magnetization
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KR20160142255A (ko
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조던 에이 카틴
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에이취지에스티 네덜란드 비.브이.
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Assigned to 샌디스크 테크놀로지스 아이엔씨. reassignment 샌디스크 테크놀로지스 아이엔씨. 권리의 전부이전등록 Assignors: 웨스턴 디지털 테크놀로지스, 인코포레이티드
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • H01L43/02—
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1673—Reading or sensing circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1675—Writing or programming circuits or methods
    • H01L43/08—
    • H01L43/10—
    • H01L43/12—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • H10N50/85—Materials of the active region

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Hall/Mr Elements (AREA)
  • Mram Or Spin Memory Techniques (AREA)
KR1020160068948A 2015-06-02 2016-06-02 외부 강자성 바이어싱 필름을 사용하는 전압 제어 자기 이방성 전환 디바이스 Active KR101869149B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US14/728,788 2015-06-02
US14/728,788 US9620562B2 (en) 2015-06-02 2015-06-02 Voltage-controlled magnetic anisotropy switching device using an external ferromagnetic biasing film

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KR20160142255A KR20160142255A (ko) 2016-12-12
KR101869149B1 true KR101869149B1 (ko) 2018-06-19

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US (1) US9620562B2 (cg-RX-API-DMAC7.html)
JP (1) JP2016225633A (cg-RX-API-DMAC7.html)
KR (1) KR101869149B1 (cg-RX-API-DMAC7.html)
CN (1) CN106374035B (cg-RX-API-DMAC7.html)
DE (1) DE102016006651A1 (cg-RX-API-DMAC7.html)
FR (1) FR3037185B1 (cg-RX-API-DMAC7.html)
GB (1) GB2539102B (cg-RX-API-DMAC7.html)
TW (1) TWI602331B (cg-RX-API-DMAC7.html)

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US9978931B2 (en) 2015-02-13 2018-05-22 Inston Inc. Systems and methods for implementing robust magnetoelectric junctions
US20170033281A1 (en) * 2015-07-29 2017-02-02 Inston Inc. Systems and Methods for Implementing Magnetoelectric Junctions Including Integrated Magnetization Components
CN109690675B (zh) 2016-06-28 2022-11-04 赢世通股份有限公司 一种可应用于磁电隧道结的新型字线脉冲写入方法
WO2018198713A1 (ja) * 2017-04-28 2018-11-01 国立研究開発法人産業技術総合研究所 磁気素子
WO2019006037A1 (en) 2017-06-27 2019-01-03 Inston, Inc. REDUCTION OF WRITE ERROR RATE IN MAGNETOELECTRIC RAM
US10861527B2 (en) 2017-06-27 2020-12-08 Inston, Inc. Systems and methods for optimizing magnetic torque and pulse shaping for reducing write error rate in magnetoelectric random access memory
JP2019057601A (ja) 2017-09-20 2019-04-11 東芝メモリ株式会社 磁気記憶装置
US10593866B2 (en) * 2018-06-27 2020-03-17 Globalfoundries Singapore Pte. Ltd. Magnetic field assisted MRAM structures, integrated circuits, and methods for fabricating the same
JP7005452B2 (ja) * 2018-07-30 2022-01-21 株式会社東芝 磁気記憶装置
US10636962B2 (en) 2018-08-21 2020-04-28 Qualcomm Incorporated Spin-orbit torque (SOT) magnetic tunnel junction (MTJ) (SOT-MTJ) devices employing perpendicular and in-plane free layer magnetic anisotropy to facilitate perpendicular magnetic orientation switching, suitable for use in memory systems for storing data
US11195991B2 (en) * 2018-09-27 2021-12-07 Taiwan Semiconductor Manufacturing Company, Ltd. Magnetic random access memory assisted devices and methods of making
EP3671874B1 (en) 2018-12-21 2022-06-22 IMEC vzw Zero-field switching for sot technology
CN110061127B (zh) * 2019-05-20 2023-08-08 中国科学院微电子研究所 磁隧道结的形成方法及磁阻式随机存储器
CN112310274A (zh) * 2019-07-31 2021-02-02 中电海康集团有限公司 自旋轨道矩磁性存储单元及其制备方法
US11069390B2 (en) * 2019-09-06 2021-07-20 Wisconsin Alumni Research Foundation Spin-orbit torque magnetoresistive random access memory with magnetic field-free current-induced perpendicular magnetization reversal
CN111490156A (zh) * 2020-04-21 2020-08-04 浙江驰拓科技有限公司 自旋轨道力矩磁存储器件及其制备方法
US11264562B1 (en) 2020-08-27 2022-03-01 Western Digital Technologies, Inc. Multiferroic-assisted voltage controlled magnetic anisotropy memory device and methods of manufacturing the same
CN114730832B (zh) * 2020-08-27 2026-01-30 桑迪士克科技股份有限公司 多铁辅助电压控制磁各向异性存储器设备及其制造方法
US11276446B1 (en) 2020-08-27 2022-03-15 Western Digital Technologies, Inc. Multiferroic-assisted voltage controlled magnetic anisotropy memory device and methods of manufacturing the same
US12093812B2 (en) 2020-10-02 2024-09-17 Sandisk Technologies Llc Ultralow power inference engine with external magnetic field programming assistance
US11729996B2 (en) 2021-07-30 2023-08-15 International Business Machines Corporation High retention eMRAM using VCMA-assisted writing
JP2023074096A (ja) * 2021-11-17 2023-05-29 ソニーセミコンダクタソリューションズ株式会社 磁気抵抗効果メモリ、メモリアレイ及びメモリシステム
US12471497B2 (en) 2022-01-25 2025-11-11 International Business Machines Corporation Magnetic tunnel junction device with magnetoelectric assist
WO2025074925A1 (ja) * 2023-10-03 2025-04-10 ソニーセミコンダクタソリューションズ株式会社 記憶装置および電子機器
CN121454427B (zh) * 2026-01-06 2026-04-10 苏州凌存科技有限公司 电压控制磁各向异性系数的测量方法及测量装置

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JP2016225633A (ja) 2016-12-28
TW201705568A (zh) 2017-02-01
GB2539102A (en) 2016-12-07
TWI602331B (zh) 2017-10-11
US20160358973A1 (en) 2016-12-08
GB201609565D0 (en) 2016-07-13
US9620562B2 (en) 2017-04-11
FR3037185A1 (cg-RX-API-DMAC7.html) 2016-12-09
KR20160142255A (ko) 2016-12-12
DE102016006651A1 (de) 2016-12-08
FR3037185B1 (fr) 2019-10-25
CN106374035B (zh) 2019-11-26
CN106374035A (zh) 2017-02-01
GB2539102B (en) 2019-09-11

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