KR101866933B1 - 개선된 입자 저감을 위한 프로세스 키트 쉴드 - Google Patents

개선된 입자 저감을 위한 프로세스 키트 쉴드 Download PDF

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Publication number
KR101866933B1
KR101866933B1 KR1020127032672A KR20127032672A KR101866933B1 KR 101866933 B1 KR101866933 B1 KR 101866933B1 KR 1020127032672 A KR1020127032672 A KR 1020127032672A KR 20127032672 A KR20127032672 A KR 20127032672A KR 101866933 B1 KR101866933 B1 KR 101866933B1
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KR
South Korea
Prior art keywords
target
process kit
metal body
disposed
kit shield
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Expired - Fee Related
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KR1020127032672A
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English (en)
Korean (ko)
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KR20130111948A (ko
Inventor
무하마드 라시드
롱준 왕
첸동 리우
신위 푸
시안민 탕
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어플라이드 머티어리얼스, 인코포레이티드
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32853—Hygiene
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32853—Hygiene
    • H01J37/32871—Means for trapping or directing unwanted particles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Physical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
KR1020127032672A 2010-05-14 2011-05-13 개선된 입자 저감을 위한 프로세스 키트 쉴드 Expired - Fee Related KR101866933B1 (ko)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
US33485810P 2010-05-14 2010-05-14
US61/334,858 2010-05-14
US41705010P 2010-11-24 2010-11-24
US61/417,050 2010-11-24
US13/106,392 2011-05-12
US13/106,392 US9834840B2 (en) 2010-05-14 2011-05-12 Process kit shield for improved particle reduction
PCT/US2011/036395 WO2011143527A2 (en) 2010-05-14 2011-05-13 Process kit shield for improved particle reduction

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020187013775A Division KR101952727B1 (ko) 2010-05-14 2011-05-13 개선된 입자 저감을 위한 프로세스 키트 쉴드

Publications (2)

Publication Number Publication Date
KR20130111948A KR20130111948A (ko) 2013-10-11
KR101866933B1 true KR101866933B1 (ko) 2018-06-14

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KR1020187013775A Expired - Fee Related KR101952727B1 (ko) 2010-05-14 2011-05-13 개선된 입자 저감을 위한 프로세스 키트 쉴드
KR1020127032672A Expired - Fee Related KR101866933B1 (ko) 2010-05-14 2011-05-13 개선된 입자 저감을 위한 프로세스 키트 쉴드

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KR1020187013775A Expired - Fee Related KR101952727B1 (ko) 2010-05-14 2011-05-13 개선된 입자 저감을 위한 프로세스 키트 쉴드

Country Status (6)

Country Link
US (2) US9834840B2 (enExample)
JP (1) JP5931055B2 (enExample)
KR (2) KR101952727B1 (enExample)
CN (1) CN102985588B (enExample)
TW (1) TWI561664B (enExample)
WO (1) WO2011143527A2 (enExample)

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US10886113B2 (en) 2016-11-25 2021-01-05 Applied Materials, Inc. Process kit and method for processing a substrate
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CN108456860B (zh) * 2017-02-22 2020-12-08 北京北方华创微电子装备有限公司 一种沉积腔室和膜层沉积装置
US10763091B2 (en) * 2017-08-18 2020-09-01 Applied Materials, Inc. Physical vapor deposition chamber particle reduction apparatus and methods
KR102024137B1 (ko) * 2017-09-20 2019-09-23 주식회사 조인솔루션 스퍼터용 석영 히터 및 이를 구비한 스퍼터링 장치
KR102717559B1 (ko) 2018-01-29 2024-10-14 어플라이드 머티어리얼스, 인코포레이티드 Pvd 프로세스들에서의 입자 감소를 위한 프로세스 키트 기하형상
CN108385070A (zh) * 2018-04-13 2018-08-10 深圳市华星光电技术有限公司 防着板以及溅射装置
CN111902922B (zh) * 2018-04-18 2024-04-19 应用材料公司 具有自定心特征的两件式快门盘组件
TWI788618B (zh) * 2019-01-25 2023-01-01 美商應用材料股份有限公司 物理氣相沉積靶材組件
US11114288B2 (en) * 2019-02-08 2021-09-07 Applied Materials, Inc. Physical vapor deposition apparatus
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Also Published As

Publication number Publication date
CN102985588A (zh) 2013-03-20
WO2011143527A3 (en) 2012-03-01
KR101952727B1 (ko) 2019-02-27
JP5931055B2 (ja) 2016-06-08
TWI561664B (en) 2016-12-11
KR20180058841A (ko) 2018-06-01
KR20130111948A (ko) 2013-10-11
JP2013528706A (ja) 2013-07-11
US20180087147A1 (en) 2018-03-29
US10718049B2 (en) 2020-07-21
US9834840B2 (en) 2017-12-05
US20110278165A1 (en) 2011-11-17
CN102985588B (zh) 2016-08-03
TW201217569A (en) 2012-05-01
WO2011143527A2 (en) 2011-11-17

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