CN102985588B - 用于改善减少颗粒的处理套件屏蔽 - Google Patents

用于改善减少颗粒的处理套件屏蔽 Download PDF

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Publication number
CN102985588B
CN102985588B CN201180029451.2A CN201180029451A CN102985588B CN 102985588 B CN102985588 B CN 102985588B CN 201180029451 A CN201180029451 A CN 201180029451A CN 102985588 B CN102985588 B CN 102985588B
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China
Prior art keywords
target
flange
processing
kit shield
contoured surface
Prior art date
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Expired - Fee Related
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CN201180029451.2A
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English (en)
Chinese (zh)
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CN102985588A (zh
Inventor
穆罕默德·拉希德
汪荣军
刘振东
付新宇
唐先民
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Applied Materials Inc
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Applied Materials Inc
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32853—Hygiene
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32853—Hygiene
    • H01J37/32871—Means for trapping or directing unwanted particles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Physical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
CN201180029451.2A 2010-05-14 2011-05-13 用于改善减少颗粒的处理套件屏蔽 Expired - Fee Related CN102985588B (zh)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
US33485810P 2010-05-14 2010-05-14
US61/334,858 2010-05-14
US41705010P 2010-11-24 2010-11-24
US61/417,050 2010-11-24
US13/106,392 2011-05-12
US13/106,392 US9834840B2 (en) 2010-05-14 2011-05-12 Process kit shield for improved particle reduction
PCT/US2011/036395 WO2011143527A2 (en) 2010-05-14 2011-05-13 Process kit shield for improved particle reduction

Publications (2)

Publication Number Publication Date
CN102985588A CN102985588A (zh) 2013-03-20
CN102985588B true CN102985588B (zh) 2016-08-03

Family

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Family Applications (1)

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CN201180029451.2A Expired - Fee Related CN102985588B (zh) 2010-05-14 2011-05-13 用于改善减少颗粒的处理套件屏蔽

Country Status (6)

Country Link
US (2) US9834840B2 (enExample)
JP (1) JP5931055B2 (enExample)
KR (2) KR101952727B1 (enExample)
CN (1) CN102985588B (enExample)
TW (1) TWI561664B (enExample)
WO (1) WO2011143527A2 (enExample)

Families Citing this family (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8795488B2 (en) * 2010-03-31 2014-08-05 Applied Materials, Inc. Apparatus for physical vapor deposition having centrally fed RF energy
CN103987873B (zh) * 2011-12-12 2016-10-05 佳能安内华股份有限公司 溅镀装置、靶材及护罩
WO2013094200A1 (ja) * 2011-12-22 2013-06-27 キヤノンアネルバ株式会社 基板処理装置
US9695502B2 (en) * 2012-03-30 2017-07-04 Applied Materials, Inc. Process kit with plasma-limiting gap
US20130277203A1 (en) * 2012-04-24 2013-10-24 Applied Materials, Inc. Process kit shield and physical vapor deposition chamber having same
US9633824B2 (en) 2013-03-05 2017-04-25 Applied Materials, Inc. Target for PVD sputtering system
CN105009252B (zh) * 2013-03-14 2017-07-28 应用材料公司 使用选择性接地且可移动的处理配环处理基板的方法与装置
US9472443B2 (en) * 2013-03-14 2016-10-18 Applied Materials, Inc. Selectively groundable cover ring for substrate process chambers
US9644262B2 (en) * 2013-03-15 2017-05-09 Applied Materials, Inc. Self-centering process shield
US10096455B2 (en) 2013-09-17 2018-10-09 Applied Materials, Inc. Extended dark space shield
CN104878363B (zh) * 2014-02-28 2017-07-21 北京北方微电子基地设备工艺研究中心有限责任公司 机械卡盘及等离子体加工设备
US10283334B2 (en) * 2014-08-22 2019-05-07 Applied Materials, Inc. Methods and apparatus for maintaining low non-uniformity over target life
CN105779932B (zh) * 2014-12-26 2018-08-24 北京北方华创微电子装备有限公司 用于处理腔室的工艺内衬和物理气相沉积设备
US10546733B2 (en) 2014-12-31 2020-01-28 Applied Materials, Inc. One-piece process kit shield
EP3380643A4 (en) * 2015-11-24 2019-08-14 Applied Materials, Inc. PRE-COATED GUARD FOR VHF RF PVD CHAMBERS
US10431440B2 (en) * 2015-12-20 2019-10-01 Applied Materials, Inc. Methods and apparatus for processing a substrate
CN110036136B (zh) * 2016-11-19 2022-05-24 应用材料公司 具有浮动遮蔽环的工艺配件
US10886113B2 (en) 2016-11-25 2021-01-05 Applied Materials, Inc. Process kit and method for processing a substrate
US9773665B1 (en) * 2016-12-06 2017-09-26 Applied Materials, Inc. Particle reduction in a physical vapor deposition chamber
CN108456860B (zh) * 2017-02-22 2020-12-08 北京北方华创微电子装备有限公司 一种沉积腔室和膜层沉积装置
US10763091B2 (en) * 2017-08-18 2020-09-01 Applied Materials, Inc. Physical vapor deposition chamber particle reduction apparatus and methods
KR102024137B1 (ko) * 2017-09-20 2019-09-23 주식회사 조인솔루션 스퍼터용 석영 히터 및 이를 구비한 스퍼터링 장치
KR102717559B1 (ko) 2018-01-29 2024-10-14 어플라이드 머티어리얼스, 인코포레이티드 Pvd 프로세스들에서의 입자 감소를 위한 프로세스 키트 기하형상
CN108385070A (zh) * 2018-04-13 2018-08-10 深圳市华星光电技术有限公司 防着板以及溅射装置
CN111902922B (zh) * 2018-04-18 2024-04-19 应用材料公司 具有自定心特征的两件式快门盘组件
TWI788618B (zh) * 2019-01-25 2023-01-01 美商應用材料股份有限公司 物理氣相沉積靶材組件
US11114288B2 (en) * 2019-02-08 2021-09-07 Applied Materials, Inc. Physical vapor deposition apparatus
KR102278078B1 (ko) * 2019-10-17 2021-07-19 세메스 주식회사 기판 반송 장치 및 기판 처리 장치
USD941372S1 (en) 2020-03-20 2022-01-18 Applied Materials, Inc. Process shield for a substrate processing chamber
USD934315S1 (en) 2020-03-20 2021-10-26 Applied Materials, Inc. Deposition ring for a substrate processing chamber
US11339466B2 (en) * 2020-03-20 2022-05-24 Applied Materials, Inc. Heated shield for physical vapor deposition chamber
USD941371S1 (en) 2020-03-20 2022-01-18 Applied Materials, Inc. Process shield for a substrate processing chamber
US11492697B2 (en) * 2020-06-22 2022-11-08 Applied Materials, Inc. Apparatus for improved anode-cathode ratio for rf chambers
US20220178021A1 (en) * 2020-12-08 2022-06-09 Skytech Co., Ltd. Wafer fixing mechanism and wafer pre-cleaning machine using the wafer fixing mechanism
JP2023048694A (ja) * 2021-09-28 2023-04-07 芝浦メカトロニクス株式会社 成膜装置
US12183559B2 (en) * 2021-10-22 2024-12-31 Applied Materials, Inc. Apparatus for temperature control in a substrate processing chamber
USD1038901S1 (en) 2022-01-12 2024-08-13 Applied Materials, Inc. Collimator for a physical vapor deposition chamber

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5690795A (en) * 1995-06-05 1997-11-25 Applied Materials, Inc. Screwless shield assembly for vacuum processing chambers
US6013159A (en) * 1997-11-16 2000-01-11 Applied Materials, Inc. Particle trap in a magnetron sputtering chamber
US20030217913A1 (en) * 2002-05-21 2003-11-27 Applied Materials, Inc. Small planetary magnetron
US20050133361A1 (en) * 2003-12-12 2005-06-23 Applied Materials, Inc. Compensation of spacing between magnetron and sputter target
CN1754978A (zh) * 2004-06-01 2006-04-05 应用材料股份有限公司 等离子体处理过程中减小电弧的方法和装置
US20100055298A1 (en) * 2008-08-28 2010-03-04 Applied Materials, Inc. Process kit shields and methods of use thereof

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0220210Y2 (enExample) * 1986-08-25 1990-06-01
US5643366A (en) * 1994-01-31 1997-07-01 Applied Materials, Inc. Wafer handling within a vacuum chamber using vacuum
US5658442A (en) * 1996-03-07 1997-08-19 Applied Materials, Inc. Target and dark space shield for a physical vapor deposition system
US5824197A (en) * 1996-06-05 1998-10-20 Applied Materials, Inc. Shield for a physical vapor deposition chamber
US6432203B1 (en) * 1997-03-17 2002-08-13 Applied Komatsu Technology, Inc. Heated and cooled vacuum chamber shield
US5922133A (en) * 1997-09-12 1999-07-13 Applied Materials, Inc. Multiple edge deposition exclusion rings
US6149776A (en) * 1998-11-12 2000-11-21 Applied Materials, Inc. Copper sputtering target
US6149784A (en) * 1999-10-22 2000-11-21 Applied Materials, Inc. Sputtering chamber shield promoting reliable plasma ignition
US6620296B2 (en) * 2000-07-17 2003-09-16 Applied Materials, Inc. Target sidewall design to reduce particle generation during magnetron sputtering
US6440879B1 (en) * 2001-01-05 2002-08-27 Integrated Device Technology, Inc. Physical vapor deposition apparatus with modified shutter disk and cover ring
AU2003205849A1 (en) * 2002-02-14 2003-09-04 Trikon Technologies Limited Plasma processing apparatus
US7504006B2 (en) * 2002-08-01 2009-03-17 Applied Materials, Inc. Self-ionized and capacitively-coupled plasma for sputtering and resputtering
US7618769B2 (en) * 2004-06-07 2009-11-17 Applied Materials, Inc. Textured chamber surface
US7579067B2 (en) * 2004-11-24 2009-08-25 Applied Materials, Inc. Process chamber component with layered coating and method
US9127362B2 (en) * 2005-10-31 2015-09-08 Applied Materials, Inc. Process kit and target for substrate processing chamber
US7718045B2 (en) 2006-06-27 2010-05-18 Applied Materials, Inc. Ground shield with reentrant feature
US7981262B2 (en) 2007-01-29 2011-07-19 Applied Materials, Inc. Process kit for substrate processing chamber
US20080257263A1 (en) * 2007-04-23 2008-10-23 Applied Materials, Inc. Cooling shield for substrate processing chamber
US20080268281A1 (en) * 2007-04-27 2008-10-30 Quan Bai Shield Components With Enhanced Thermal and Mechanical Stability
US20090260982A1 (en) * 2008-04-16 2009-10-22 Applied Materials, Inc. Wafer processing deposition shielding components
JP4537479B2 (ja) * 2008-11-28 2010-09-01 キヤノンアネルバ株式会社 スパッタリング装置
JP5773346B2 (ja) * 2009-03-12 2015-09-02 株式会社アルバック セルフイオンスパッタリング装置
US9752228B2 (en) 2009-04-03 2017-09-05 Applied Materials, Inc. Sputtering target for PVD chamber
CN203103267U (zh) * 2010-01-29 2013-07-31 应用材料公司 屏蔽件和处理套件

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5690795A (en) * 1995-06-05 1997-11-25 Applied Materials, Inc. Screwless shield assembly for vacuum processing chambers
US6013159A (en) * 1997-11-16 2000-01-11 Applied Materials, Inc. Particle trap in a magnetron sputtering chamber
US20030217913A1 (en) * 2002-05-21 2003-11-27 Applied Materials, Inc. Small planetary magnetron
US20050133361A1 (en) * 2003-12-12 2005-06-23 Applied Materials, Inc. Compensation of spacing between magnetron and sputter target
CN1754978A (zh) * 2004-06-01 2006-04-05 应用材料股份有限公司 等离子体处理过程中减小电弧的方法和装置
US20100055298A1 (en) * 2008-08-28 2010-03-04 Applied Materials, Inc. Process kit shields and methods of use thereof

Also Published As

Publication number Publication date
CN102985588A (zh) 2013-03-20
WO2011143527A3 (en) 2012-03-01
KR101952727B1 (ko) 2019-02-27
JP5931055B2 (ja) 2016-06-08
TWI561664B (en) 2016-12-11
KR20180058841A (ko) 2018-06-01
KR20130111948A (ko) 2013-10-11
JP2013528706A (ja) 2013-07-11
KR101866933B1 (ko) 2018-06-14
US20180087147A1 (en) 2018-03-29
US10718049B2 (en) 2020-07-21
US9834840B2 (en) 2017-12-05
US20110278165A1 (en) 2011-11-17
TW201217569A (en) 2012-05-01
WO2011143527A2 (en) 2011-11-17

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