KR101820786B1 - 일렉트로루미네선트 유기 이중 게이트 트랜지스터 - Google Patents

일렉트로루미네선트 유기 이중 게이트 트랜지스터 Download PDF

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Publication number
KR101820786B1
KR101820786B1 KR1020147005277A KR20147005277A KR101820786B1 KR 101820786 B1 KR101820786 B1 KR 101820786B1 KR 1020147005277 A KR1020147005277 A KR 1020147005277A KR 20147005277 A KR20147005277 A KR 20147005277A KR 101820786 B1 KR101820786 B1 KR 101820786B1
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South Korea
Prior art keywords
layer
semiconductor material
electrode
layers
transistor
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Expired - Fee Related
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KR1020147005277A
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English (en)
Korean (ko)
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KR20140056303A (ko
Inventor
미쉘 무시니
미쉘 무시니
라파엘라 카펠리
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이.티.씨. 에스.알.엘.
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/484—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions
    • H10K10/486—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions the channel region comprising two or more active layers, e.g. forming pn heterojunctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/30—Organic light-emitting transistors

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  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Thin Film Transistor (AREA)
  • Electroluminescent Light Sources (AREA)
KR1020147005277A 2011-07-29 2012-07-26 일렉트로루미네선트 유기 이중 게이트 트랜지스터 Expired - Fee Related KR101820786B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
ITMI2011A001445 2011-07-29
IT001445A ITMI20111445A1 (it) 2011-07-29 2011-07-29 Transistor organico elettroluminescente a doppio gate
PCT/IB2012/053814 WO2013017999A1 (en) 2011-07-29 2012-07-26 Electroluminescent organic double gate transistor

Publications (2)

Publication Number Publication Date
KR20140056303A KR20140056303A (ko) 2014-05-09
KR101820786B1 true KR101820786B1 (ko) 2018-01-22

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020147005277A Expired - Fee Related KR101820786B1 (ko) 2011-07-29 2012-07-26 일렉트로루미네선트 유기 이중 게이트 트랜지스터

Country Status (7)

Country Link
US (1) US20140374708A1 (enExample)
EP (1) EP2737559B1 (enExample)
JP (1) JP5872038B2 (enExample)
KR (1) KR101820786B1 (enExample)
CN (1) CN103782408B (enExample)
IT (1) ITMI20111445A1 (enExample)
WO (1) WO2013017999A1 (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2911214B1 (en) * 2014-02-20 2018-08-08 Amorosi, Antonio Multilayer structure of an OLET transistor
EP2960280A1 (en) 2014-06-26 2015-12-30 E.T.C. S.r.l. Photocrosslinkable compositions, patterned high k thin film dielectrics and related devices
EP2978035A1 (en) 2014-07-24 2016-01-27 E.T.C. S.r.l. Organic electroluminescent transistor
EP2978037A1 (en) 2014-07-24 2016-01-27 E.T.C. S.r.l. Organic electroluminescent transistor
JP6742983B2 (ja) * 2014-07-24 2020-08-19 フレックステッラ・インコーポレイテッド 有機エレクトロルミネッセンストランジスタ
EP2978038A1 (en) 2014-07-24 2016-01-27 E.T.C. S.r.l. Organic electroluminescent transistor
EP3021373A1 (en) 2014-11-14 2016-05-18 E.T.C. S.r.l. Display containing improved pixel architectures
WO2016100983A1 (en) 2014-12-19 2016-06-23 Polyera Corporation Photocrosslinkable compositions, patterned high k thin film dielectrics and related devices
JP6546400B2 (ja) * 2015-02-05 2019-07-17 株式会社ジャパンディスプレイ 表示装置

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB0407739D0 (en) * 2004-04-05 2004-05-12 Univ Cambridge Tech Dual-gate transistors
DE202006003360U1 (de) * 2006-03-03 2006-06-01 Schön, Hendrik Lichtemittierender Feldeffekttransistor
JP4408903B2 (ja) * 2007-01-24 2010-02-03 セイコーエプソン株式会社 トランジスタ、トランジスタ回路、電気光学装置および電子機器
KR20090002787A (ko) * 2007-07-04 2009-01-09 삼성전자주식회사 트랜지스터 구조를 이용한 발광소자 및 수광소자
US20110215314A1 (en) 2008-10-29 2011-09-08 Koninklijke Philips Electronics N.V. Dual gate field-effect transistor and method of producing a dual gate field-effect transistor
WO2010068619A1 (en) * 2008-12-08 2010-06-17 The Trustees Of The University Of Pennsylvania Organic semiconductors capable of ambipolar transport
ITMI20111446A1 (it) * 2011-07-29 2013-01-30 E T C Srl Transistor organico elettroluminescente

Also Published As

Publication number Publication date
JP2014522113A (ja) 2014-08-28
CN103782408B (zh) 2016-08-31
US20140374708A1 (en) 2014-12-25
WO2013017999A1 (en) 2013-02-07
CN103782408A (zh) 2014-05-07
EP2737559A1 (en) 2014-06-04
JP5872038B2 (ja) 2016-03-01
ITMI20111445A1 (it) 2013-01-30
EP2737559B1 (en) 2015-01-21
KR20140056303A (ko) 2014-05-09

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