JP5872038B2 - 電界発光有機二重ゲートトランジスタ - Google Patents

電界発光有機二重ゲートトランジスタ Download PDF

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Publication number
JP5872038B2
JP5872038B2 JP2014522201A JP2014522201A JP5872038B2 JP 5872038 B2 JP5872038 B2 JP 5872038B2 JP 2014522201 A JP2014522201 A JP 2014522201A JP 2014522201 A JP2014522201 A JP 2014522201A JP 5872038 B2 JP5872038 B2 JP 5872038B2
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layer
semiconductor material
electrode
thickness
organic electroluminescent
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Expired - Fee Related
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JP2014522201A
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Japanese (ja)
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JP2014522113A (ja
JP2014522113A5 (enExample
Inventor
ミケーレ・ムッチーニ
ラファエラ・カペッリ
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エ・ティ・チ・エッセ・エッレ・エッレ
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/484—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions
    • H10K10/486—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions the channel region comprising two or more active layers, e.g. forming pn heterojunctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/30—Organic light-emitting transistors

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  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Thin Film Transistor (AREA)
  • Electroluminescent Light Sources (AREA)
JP2014522201A 2011-07-29 2012-07-26 電界発光有機二重ゲートトランジスタ Expired - Fee Related JP5872038B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
ITMI2011A001445 2011-07-29
IT001445A ITMI20111445A1 (it) 2011-07-29 2011-07-29 Transistor organico elettroluminescente a doppio gate
PCT/IB2012/053814 WO2013017999A1 (en) 2011-07-29 2012-07-26 Electroluminescent organic double gate transistor

Publications (3)

Publication Number Publication Date
JP2014522113A JP2014522113A (ja) 2014-08-28
JP2014522113A5 JP2014522113A5 (enExample) 2015-09-03
JP5872038B2 true JP5872038B2 (ja) 2016-03-01

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ID=44545837

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JP2014522201A Expired - Fee Related JP5872038B2 (ja) 2011-07-29 2012-07-26 電界発光有機二重ゲートトランジスタ

Country Status (7)

Country Link
US (1) US20140374708A1 (enExample)
EP (1) EP2737559B1 (enExample)
JP (1) JP5872038B2 (enExample)
KR (1) KR101820786B1 (enExample)
CN (1) CN103782408B (enExample)
IT (1) ITMI20111445A1 (enExample)
WO (1) WO2013017999A1 (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2911214B1 (en) * 2014-02-20 2018-08-08 Amorosi, Antonio Multilayer structure of an OLET transistor
EP2960280A1 (en) 2014-06-26 2015-12-30 E.T.C. S.r.l. Photocrosslinkable compositions, patterned high k thin film dielectrics and related devices
EP2978035A1 (en) 2014-07-24 2016-01-27 E.T.C. S.r.l. Organic electroluminescent transistor
EP2978037A1 (en) 2014-07-24 2016-01-27 E.T.C. S.r.l. Organic electroluminescent transistor
JP6742983B2 (ja) * 2014-07-24 2020-08-19 フレックステッラ・インコーポレイテッド 有機エレクトロルミネッセンストランジスタ
EP2978038A1 (en) 2014-07-24 2016-01-27 E.T.C. S.r.l. Organic electroluminescent transistor
EP3021373A1 (en) 2014-11-14 2016-05-18 E.T.C. S.r.l. Display containing improved pixel architectures
WO2016100983A1 (en) 2014-12-19 2016-06-23 Polyera Corporation Photocrosslinkable compositions, patterned high k thin film dielectrics and related devices
JP6546400B2 (ja) * 2015-02-05 2019-07-17 株式会社ジャパンディスプレイ 表示装置

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB0407739D0 (en) * 2004-04-05 2004-05-12 Univ Cambridge Tech Dual-gate transistors
DE202006003360U1 (de) * 2006-03-03 2006-06-01 Schön, Hendrik Lichtemittierender Feldeffekttransistor
JP4408903B2 (ja) * 2007-01-24 2010-02-03 セイコーエプソン株式会社 トランジスタ、トランジスタ回路、電気光学装置および電子機器
KR20090002787A (ko) * 2007-07-04 2009-01-09 삼성전자주식회사 트랜지스터 구조를 이용한 발광소자 및 수광소자
US20110215314A1 (en) 2008-10-29 2011-09-08 Koninklijke Philips Electronics N.V. Dual gate field-effect transistor and method of producing a dual gate field-effect transistor
WO2010068619A1 (en) * 2008-12-08 2010-06-17 The Trustees Of The University Of Pennsylvania Organic semiconductors capable of ambipolar transport
ITMI20111446A1 (it) * 2011-07-29 2013-01-30 E T C Srl Transistor organico elettroluminescente

Also Published As

Publication number Publication date
JP2014522113A (ja) 2014-08-28
CN103782408B (zh) 2016-08-31
US20140374708A1 (en) 2014-12-25
WO2013017999A1 (en) 2013-02-07
CN103782408A (zh) 2014-05-07
KR101820786B1 (ko) 2018-01-22
EP2737559A1 (en) 2014-06-04
ITMI20111445A1 (it) 2013-01-30
EP2737559B1 (en) 2015-01-21
KR20140056303A (ko) 2014-05-09

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