CN103782408B - 电致发光有机双栅晶体管 - Google Patents

电致发光有机双栅晶体管 Download PDF

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Publication number
CN103782408B
CN103782408B CN201280038511.1A CN201280038511A CN103782408B CN 103782408 B CN103782408 B CN 103782408B CN 201280038511 A CN201280038511 A CN 201280038511A CN 103782408 B CN103782408 B CN 103782408B
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CN
China
Prior art keywords
layer
semiconductor material
material layer
electrode
thickness
Prior art date
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Expired - Fee Related
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CN201280038511.1A
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English (en)
Chinese (zh)
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CN103782408A (zh
Inventor
M·默西尼
R·卡佩立
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Etc i L LLC
POLYERA CORP
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ETC SRL
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Publication of CN103782408A publication Critical patent/CN103782408A/zh
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Publication of CN103782408B publication Critical patent/CN103782408B/zh
Expired - Fee Related legal-status Critical Current
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/30—Organic light-emitting transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/484—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions
    • H10K10/486—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions the channel region comprising two or more active layers, e.g. forming pn heterojunctions

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Thin Film Transistor (AREA)
  • Electroluminescent Light Sources (AREA)
CN201280038511.1A 2011-07-29 2012-07-26 电致发光有机双栅晶体管 Expired - Fee Related CN103782408B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
IT2011A001445 2011-07-29
IT001445A ITMI20111445A1 (it) 2011-07-29 2011-07-29 Transistor organico elettroluminescente a doppio gate
PCT/IB2012/053814 WO2013017999A1 (en) 2011-07-29 2012-07-26 Electroluminescent organic double gate transistor

Publications (2)

Publication Number Publication Date
CN103782408A CN103782408A (zh) 2014-05-07
CN103782408B true CN103782408B (zh) 2016-08-31

Family

ID=44545837

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201280038511.1A Expired - Fee Related CN103782408B (zh) 2011-07-29 2012-07-26 电致发光有机双栅晶体管

Country Status (7)

Country Link
US (1) US20140374708A1 (enExample)
EP (1) EP2737559B1 (enExample)
JP (1) JP5872038B2 (enExample)
KR (1) KR101820786B1 (enExample)
CN (1) CN103782408B (enExample)
IT (1) ITMI20111445A1 (enExample)
WO (1) WO2013017999A1 (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2911214B1 (en) * 2014-02-20 2018-08-08 Amorosi, Antonio Multilayer structure of an OLET transistor
EP2960280A1 (en) 2014-06-26 2015-12-30 E.T.C. S.r.l. Photocrosslinkable compositions, patterned high k thin film dielectrics and related devices
EP2978035A1 (en) 2014-07-24 2016-01-27 E.T.C. S.r.l. Organic electroluminescent transistor
EP2978038A1 (en) 2014-07-24 2016-01-27 E.T.C. S.r.l. Organic electroluminescent transistor
WO2016014980A1 (en) 2014-07-24 2016-01-28 E.T.C.S.R.L. Organic electroluminescent transistor
EP2978037A1 (en) 2014-07-24 2016-01-27 E.T.C. S.r.l. Organic electroluminescent transistor
EP3021373A1 (en) 2014-11-14 2016-05-18 E.T.C. S.r.l. Display containing improved pixel architectures
WO2016100983A1 (en) 2014-12-19 2016-06-23 Polyera Corporation Photocrosslinkable compositions, patterned high k thin film dielectrics and related devices
JP6546400B2 (ja) * 2015-02-05 2019-07-17 株式会社ジャパンディスプレイ 表示装置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE202006003360U1 (de) * 2006-03-03 2006-06-01 Schön, Hendrik Lichtemittierender Feldeffekttransistor
US20080173866A1 (en) * 2007-01-24 2008-07-24 Seiko Epson Corporation Transistor, transistor circuit, electrooptical device and electronic apparatus
US20090008628A1 (en) * 2007-07-04 2009-01-08 Samsung Electronics Co., Ltd. Light-emitting device and light-receiving device using transistor structure

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB0407739D0 (en) * 2004-04-05 2004-05-12 Univ Cambridge Tech Dual-gate transistors
JP2012507843A (ja) * 2008-10-29 2012-03-29 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ 発光用デュアルゲート電界効果トランジスタ、及び発光用デュアルゲート電界効果トランジスタの製造方法
WO2010068619A1 (en) * 2008-12-08 2010-06-17 The Trustees Of The University Of Pennsylvania Organic semiconductors capable of ambipolar transport
ITMI20111446A1 (it) * 2011-07-29 2013-01-30 E T C Srl Transistor organico elettroluminescente

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE202006003360U1 (de) * 2006-03-03 2006-06-01 Schön, Hendrik Lichtemittierender Feldeffekttransistor
US20080173866A1 (en) * 2007-01-24 2008-07-24 Seiko Epson Corporation Transistor, transistor circuit, electrooptical device and electronic apparatus
US20090008628A1 (en) * 2007-07-04 2009-01-08 Samsung Electronics Co., Ltd. Light-emitting device and light-receiving device using transistor structure

Also Published As

Publication number Publication date
JP2014522113A (ja) 2014-08-28
KR101820786B1 (ko) 2018-01-22
CN103782408A (zh) 2014-05-07
EP2737559A1 (en) 2014-06-04
US20140374708A1 (en) 2014-12-25
EP2737559B1 (en) 2015-01-21
KR20140056303A (ko) 2014-05-09
WO2013017999A1 (en) 2013-02-07
ITMI20111445A1 (it) 2013-01-30
JP5872038B2 (ja) 2016-03-01

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SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
CP01 Change in the name or title of a patent holder

Address after: Bologna, Italy

Patentee after: E.T.C. Limited Liability Company in Liquidation

Address before: Bologna, Italy

Patentee before: E.T.C. S.R.L.

CP01 Change in the name or title of a patent holder
TR01 Transfer of patent right

Effective date of registration: 20190311

Address after: Illinois Instrunment

Patentee after: POLYERA Corp.

Address before: Bologna, Italy

Patentee before: E.T.C. Limited Liability Company in Liquidation

TR01 Transfer of patent right
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20160831

CF01 Termination of patent right due to non-payment of annual fee