KR101818918B1 - Laser reflow method and substrate structure thereby - Google Patents

Laser reflow method and substrate structure thereby Download PDF

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KR101818918B1
KR101818918B1 KR1020160072639A KR20160072639A KR101818918B1 KR 101818918 B1 KR101818918 B1 KR 101818918B1 KR 1020160072639 A KR1020160072639 A KR 1020160072639A KR 20160072639 A KR20160072639 A KR 20160072639A KR 101818918 B1 KR101818918 B1 KR 101818918B1
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substrate
laser beam
solder ball
semiconductor package
laser
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KR1020160072639A
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KR20170140476A (en
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최지훈
조성윤
조완기
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크루셜머신즈 주식회사
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/11—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/52—Mounting semiconductor bodies in containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
    • H01L21/67715—Changing the direction of the conveying path
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/03—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/60—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation
    • H01L2021/60007—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation involving a soldering or an alloying process
    • H01L2021/60022—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation involving a soldering or an alloying process using bump connectors, e.g. for flip chip mounting
    • H01L2021/60097—Applying energy, e.g. for the soldering or alloying process
    • H01L2021/60105—Applying energy, e.g. for the soldering or alloying process using electromagnetic radiation
    • H01L2021/60112—Coherent radiation, i.e. laser beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/60—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation
    • H01L2021/60292—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation involving the use of an electron or laser beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector

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Abstract

The present invention relates to a laser reflow method and a substrate structure manufactured by the method, and more particularly, to a laser reflow method for manufacturing a substrate structure through a laser reflow process and a substrate structure manufactured by the method . The present invention relates to a laser reflow method, comprising the steps of: a) preparing a substrate on which a plurality of solder balls are mounted; b) seating the semiconductor package on top of the solder ball; c) transferring the substrate to an irradiating position; And d) fixing the semiconductor package to the substrate by irradiating a laser beam onto the solder ball located at the irradiation position. In the step d), the energy of the laser beam is homogenized, and the homogenized laser And the beam is irradiated to the solder ball.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to a laser reflow method,

The present invention relates to a laser reflow method and a substrate structure manufactured by the method, and more particularly, to a laser reflow method for manufacturing a substrate structure through a laser reflow process and a substrate structure manufactured by the method .

Generally, a reflow process is performed to fix the semiconductor package to the substrate. A mass reflow process, which is mainly used in a reflow process, is a process in which a plurality of substrates with solder materials such as solder balls, solder pads, and solder pastes are placed on a conveyor belt, While overheating the heating zone provided with the infrared heater for a predetermined time. At this time, the infrared heaters are provided on the upper and lower sides of the conveyor belt, and the infrared heaters apply heat to the solder balls on the substrate to attach the semiconductor elements to the substrate.

However, the mass reflow process has a problem in that the time required for the IR heater to heat the solder balls and bond the semiconductor devices to the substrate takes 10 to 30 minutes, which is not economical.

In recent years, a semiconductor package such as a passive element or an IC element is attached to a single substrate in order to reduce the thickness of the substrate structure coupled with the substrate and the semiconductor package and to reduce the cost. At this time, the passive element is bonded to the substrate by a reflow process, but the IC element is attached to the substrate by a separate bonding equipment. However, since it is impossible to apply heat energy locally to the mass reflow process, when an IC device is subjected to a mass reflow process together with a passive device, there is a problem that an IC device is thermally shocked and a failure occurs.

When the IC device is attached to the substrate after the mass reflow process in order to prevent the above-described problems, the IC device must be attached to the substrate where a predetermined thermal deformation is caused by the infrared heater. Therefore, There is a problem that it is difficult to bond normally.

Also, in the mass reflow process, an air gap may occur between the lower surface of the substrate and the upper surface of the conveyor belt. Therefore, a part of the heat applied from the infrared heater remains trapped in the air gap, thereby causing thermal deformation of the substrate.

SUMMARY OF THE INVENTION The present invention provides a laser reflow method for manufacturing a substrate structure through a reflow process using a laser and a substrate structure manufactured by the method.

It is to be understood that both the foregoing general description and the following detailed description are exemplary and explanatory and are not intended to limit the invention to the precise form disclosed. There will be.

According to an aspect of the present invention, there is provided a method of manufacturing a semiconductor device, comprising: a) preparing a substrate on which a plurality of solder balls are mounted; b) seating the semiconductor package on top of the solder ball; c) transferring the substrate to an irradiating position; And d) fixing the semiconductor package to the substrate by irradiating a laser beam onto the solder ball located at the irradiation position. In the step d), the energy of the laser beam is homogenized, and the homogenized laser beam Wherein the step of irradiating the solder balls includes the steps of: c1) placing the substrate on the transfer body; And c2) moving or stopping the carrier so that each substrate stays at the irradiation position for a predetermined time, wherein in step c1), the lower surface of the substrate is pressed against the carrier Wherein the pressure applying unit applies pressure to a portion of the substrate on which the solder ball is not disposed, the at least one pressing rod applying pressure to an upper surface of the substrate; And a pressure control module for controlling a position of the pressing rod, wherein the pressing control module controls the pressing rod to apply pressure to a portion of the substrate on which the solder ball is not disposed, Low method.

In an embodiment of the present invention, the step a) includes: a1) machining a seating groove on the upper surface of the substrate; a2) forming a metal layer on a surface of the seating groove; And a3) placing the solder ball in the seating groove.

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In the embodiment of the present invention, in the step c1), the substrate may be vacuum-adsorbed so that the substrate adheres to the upper surface of the substrate.

In an embodiment of the present invention, the carrier may be a porous vacuum chuck.

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In the embodiment of the present invention, the step (d) includes the steps of: d1) homogenizing the energy of the laser beam; d2) adjusting an irradiation area of the laser beam; And d3) reflowing the solder balls located within the irradiation region by the laser beam to fix the semiconductor package to the substrate.

In the embodiment of the present invention, in the step d3), one or more measurement locations are designated in the irradiation area, and the temperature of the solder ball located in the measurement location can be measured in real time.

In the embodiment of the present invention, in the step d3), the energy irradiation intensity of the laser beam may be controlled so that the solder ball located at the measurement location maintains a predetermined normal temperature range.

In an embodiment of the present invention, in the step d3), when the temperature of the solder ball located at the measurement location is out of the preset normal temperature range, the user can be notified.

According to an aspect of the present invention, there is provided a substrate structure manufactured by the laser reflow method, wherein a plurality of mounting grooves on which solder balls are mounted are provided, and a metal layer is formed on a surface of the mounting grooves, A substrate formed; And a semiconductor package fixed to the top of the substrate.

In the embodiment of the present invention, the diameter of the seating groove may be 0.5 to 1.0 mm.

In an embodiment of the present invention, the metal layer may be formed of a conductive metal material.

According to the embodiment of the present invention, since the substrate and the planar conductor package can be fixed by irradiating the laser beam to the solder ball for 1 to 2 seconds, the process time is shortened as compared with the conventional mass reflow process.

In addition, a mounting groove on which a plurality of solder balls can be mounted is processed in the substrate, so that the solder balls can be uniformly distributed between the substrate and the semiconductor package, and the solder balls can be prevented from being missed on the substrate. Therefore, when the semiconductor package is fixed to the substrate, the semiconductor package is prevented from being twisted because the solder ball is not missing at a part of the substrate, and the bonding force between the substrate and the semiconductor package is improved.

Further, the lower surface of the substrate is provided so as to be subjected to a laser reflow process in a state of being in close contact with the upper surface of the transfer material. Therefore, since an air gap does not occur between the transfer material and the substrate, it is possible to prevent the substrate from being damaged by the residual heat energy.

In addition, when the laser beam is irradiated, the real-time temperature of the solder ball located at the measurement location is measured to adjust the energy intensity of the laser beam in real time. When a defect occurs, the user can be notified immediately, have.

Further, since the laser beam is homogenized while passing through the optical fiber, the energy according to the position in the irradiation region can be made uniform. Therefore, there is no problem that some passive elements located in the irradiation area of the laser beam are broken due to thermal shock, or that the heat does not adhere to the substrate due to insufficient heat.

In addition, according to the embodiment of the present invention, the optical portion can easily adjust the irradiation area of the laser beam by adjusting the height of the circumferential lens and the focusing lens. That is, the optical part can easily adjust the shape and size of the irradiation area of the laser beam depending on the attachment position of the passive element.

It should be understood that the effects of the present invention are not limited to the above effects and include all effects that can be deduced from the detailed description of the present invention or the configuration of the invention described in the claims.

1 is a flowchart of a laser reflow method according to an embodiment of the present invention.
2 is a flowchart of a step of preparing a substrate of a laser reflow method according to an embodiment of the present invention.
3 is a cross-sectional view illustrating a vertical cross-section of a substrate in a laser reflow method according to an embodiment of the present invention.
4 is a flow chart of a step of transferring a substrate of a laser reflow method to an irradiation position according to an embodiment of the present invention.
5 is an exemplary view showing a state in which a substrate is transferred to an irradiation position in a laser reflow method according to an embodiment of the present invention.
6 is a flowchart of a step of fixing a semiconductor package to a substrate of a laser reflow method according to an embodiment of the present invention.
7 is a view illustrating a state in which a semiconductor package is fixed to a substrate in a laser reflow method according to an embodiment of the present invention.
8 is a perspective view illustrating an optical fiber of a laser reflow method according to an embodiment of the present invention.
9 is a perspective view illustrating a first cylindrical lens and a second cylindrical lens of a laser reflow method according to an embodiment of the present invention.
10 is a longitudinal sectional view showing a substrate structure manufactured by a manufacturing method according to a laser reflow method according to an embodiment of the present invention.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, the present invention will be described with reference to the accompanying drawings. The present invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. In order to clearly illustrate the present invention, parts not related to the description are omitted, and similar parts are denoted by like reference characters throughout the specification.

Throughout the specification, when a part is referred to as being "connected" (connected, connected, coupled) with another part, it is not only the case where it is "directly connected" "Is included. Also, when an element is referred to as "comprising ", it means that it can include other elements, not excluding other elements unless specifically stated otherwise.

The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. The singular expressions include plural expressions unless the context clearly dictates otherwise. In this specification, the terms "comprises" or "having" and the like refer to the presence of stated features, integers, steps, operations, elements, components, or combinations thereof, But do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, or combinations thereof.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.

FIG. 1 is a flow chart of a laser reflow method according to an embodiment of the present invention, FIG. 2 is a flowchart of a step of preparing a substrate of a laser reflow method according to an embodiment of the present invention, 1 is a cross-sectional view illustrating a longitudinal cross-section of a substrate in a laser reflow method according to an embodiment.

As shown in FIGS. 1 to 3, the laser reflow method according to the present embodiment may include a step S110 of preparing a substrate 211 on which a plurality of solder balls S are mounted.

First, the step S110 includes a step S111 of machining the seating groove 212 on the upper surface of the substrate 211. The substrate 211 may be formed of a plate in which circuits such as an integrated circuit and a high-density integrated circuit are copied and an electric circuit is knitted. A plurality of seating grooves 212 may be formed on the upper surface of the substrate 211 so that the solder ball S can be seated. The shape of the seating groove 212 may be hemispherical, and the diameter of the seating groove 212 may be 0.5 to 1.0 mm. However, the shape of the seating groove 212 is not limited to this, and may be provided in various shapes. That is, all of the shapes in which the solder ball S can be easily mounted on the substrate 211 are included in one embodiment.

Next, the step S110 includes a step (S112) of forming a metal layer 213 on the surface of the seating groove 212. The metal layer 213 formed on the surface of the seating groove 212 may be formed of a conductive material. For example, the metal layer 213 may be formed of a conductive material such as silver (Ag), copper (Cu), aluminum (Al), and iron (Fe). However, the material of the metal layer 213 is not limited thereto.

The step S110 includes the step S113 of placing the solder ball S in the seating groove 212. That is, the solder balls S can be seated on the plurality of seating grooves 212 formed on the upper surface of the substrate 211. Accordingly, the solder ball S may be evenly distributed on the upper surface of the substrate 211, and the solder ball S may not be separated from the predetermined position. Then, when the laser beam is irradiated onto the solder ball S in a subsequent step, the semiconductor package 214 can be fixed to the substrate 211 without being warped or warped.

After step S110, the laser reflow method includes step S120 of placing the semiconductor package 214 on top of the solder ball S. Specifically, the semiconductor package 214 may be seated on a top surface of a plurality of solder balls S, and may be positioned at a position where the solder balls S can be electrically connected to the substrate 211 through a laser reflow process. The substrate 211 and the semiconductor package 214, which are stacked as described above, The solder ball S is mounted on the substrate 211 on which the mounting groove 212 and the metal layer 213 are formed and the semiconductor package 214 is mounted on the solder ball S, Quot; refers to a structure irradiated by a beam and before the substrate 211 and the semiconductor package 214 are coupled.

FIG. 4 is a flow chart of a step of transferring a substrate of a laser reflow method according to an embodiment of the present invention to an irradiated position, FIG. 5 is a diagram illustrating a laser reflow method according to an embodiment of the present invention, As shown in Fig.

4 and 5, after step S120, the laser reflow method may perform step S130 of transferring the substrate 211 to the irradiation position. At this time, the substrate 211 can be transferred to the irradiating position of the laser beam by the transfer unit 220. The transfer unit 220 includes a transfer body 221 on which an upper substrate 211 can be placed and a transfer module 222 for providing power to the transfer body 221.

In operation S130, the substrate 211 may be placed on the transfer body 221 (S131). Here, the transfer member 221 may refer to the main body of the transfer unit 220, on which the substrate 211 is mounted and which transfers the substrate 211 to the irradiation position of the laser beam, as described above. The transfer body 221 may further include a vacuum module 223 for vacuum-chucking the substrate so that the lower surface of the substrate 211 is closely attached to the upper surface. The vacuum module 223 is connected to the transfer body 221 so that the lower surface of the substrate 211 is closely contacted with the transfer body 221, It is possible to provide vacuum pressure as close as possible. Specifically, the transfer member 221 may be provided as a porous vacuum chuck made of a ceramic material. When the inside of the conveying body 221 is evacuated by the vacuum module 223 because the conveying body 221 made of the porous vacuum chuck has a plurality of microcracks, The air can be moved downward through the inside of the conveying body 221. [ The substrate 211 can be further adhered to the upper surface of the conveying member 221 by the flow of air. However, the structure for bringing the substrate 211 into close contact with the transfer body 221 is not limited to the embodiment. That is, it is also possible to form a plurality of vacuum holes (not shown) in the conveying member 221 and to generate a vacuum pressure in the vacuum hole, thereby bringing the substrate 211 into close contact with the conveying member 221.

Also, the substrate 211 may be deformed such as warp during the manufacturing process. Therefore, when the substrate 211 is seated on the conveying member 221, a part of the lower surface of the substrate 211 on which the deformation has occurred may not come into close contact with the conveying member 221. In this case, the substrate 211 may be provided so as to be brought into close contact with the conveying member 221 by the press- Specifically, the press contact portion 230 includes a pressurizing rod 231 and a pressurization control module 232. One or more pressing rods 231 may be provided on the upper portion of the conveying body 221 and the pressing rods 231 may be provided in the form of columns extending vertically. However, the shape of the pressing rod 231 is not limited to that of the embodiment, and may be any shape as long as the substrate 211 can be brought into close contact with the transfer body 221 by applying pressure temporarily to the upper surface of the substrate 211 May be included in the implementation. The pressing control module 232 can move the pressing rod 231 in the horizontal direction so that the pressing rod 231 is positioned above the portion where the substrate 211 and the conveying body 221 are not in close contact with each other. The pressing control module 232 is connected to the pressing rod 231 to move the pressing rod 231 downward and bring the pressing rod 231 upward Can be moved. At this time, the pressure control module 232 may cause the pressing rod 231 to exert pressure on the upper surface of the substrate 211, but apply pressure to the portion where the solder ball S is not positioned.

An air gap is present between the lower surface of the substrate 211 and the upper surface of the transfer member 221 when the substrate 211 is not in close contact with the transfer member 221. [ When the substrate 210 is irradiated with the laser beam in this state, some of the heat of the laser beam that has passed through the substrate 210 by the substrate 210 does not completely pass through the body 210 and remains in the air gap. That is, the substrate 211 may undergo thermal deformation due to residual heat energy. When the substrate 210 is irradiated with a laser beam in a state where the lower surface of the substrate 211 is in close contact with the upper surface of the substrate 221, an air gap is formed between the substrate 221 and the substrate 221 It is possible to prevent the substrate 211 from being damaged by the residual heat energy.

The transfer unit 220 may further include a heater module 224 and a cooling module 225 provided on the transfer body 221. The heater module 224 and the cooling module 225 can effectively prevent the occurrence of thermal deformation of the substrate 211 by adjusting the temperature of the transfer body 221. [ Here, the heater module 224 may be provided with an infrared heater, and the cooling module 225 may be provided with a cooler having a coolant.

After step S131, a step S132 of moving or stopping the conveying body 221 so that each substrate 211 remains at the irradiation position for a predetermined time may be performed. Specifically, after the transfer body 221 is moved so that each of the substrates 211 is successively positioned at the irradiation position, the transfer module 222 may be configured such that the substrate 211 located at the irradiation position is irradiated with a laser beam And can stay in the irradiation position for a predetermined time.

FIG. 6 is a flow chart of a step of fixing a semiconductor package to a substrate of a laser reflow method according to an embodiment of the present invention. FIG. 7 is a diagram illustrating a laser reflow method according to an embodiment of the present invention, FIG. 8 is a perspective view illustrating an optical fiber of a laser reflow method according to an embodiment of the present invention, FIG. 9 is a cross-sectional view of a first laser reflow method according to an embodiment of the present invention, A cylindrical lens and a second cylindrical lens.

6 to 9, after step S130, a step (S140) of fixing the semiconductor package 214 to the substrate 211 by irradiating a laser beam onto the solder ball S located at the irradiation position is performed .

First, in step S140, a step S141 may be performed in which the energy of the laser beam is homogenized. Generally, the surface-irradiated laser beam has a Gaussian distribution in which energy decreases as the distance from the center of the irradiation region increases. Therefore, when the substrate is irradiated with a laser beam having a Gaussian distribution on the body 210, thermal deformation occurs due to excessive heat energy at the central portion of the irradiation region, and thermal energy required for reflow is insufficient at the edge of the irradiation region, The semiconductor package 214 may not be fixed. Therefore, in step S141, the energy in the irradiation area irradiated with the laser beam can be made uniform. Hereinafter, a method of homogenizing the energy of the laser beam using the optical fiber 250 according to one embodiment will be described.

The optical fiber 250 according to one embodiment includes a core 251 and a cladding 252. Specifically, the core 251 may have a rectangular cross section and may extend in the form of a column, and a hollow portion through which a laser beam can be transmitted may be provided inside the core 251. At this time, the core 251 may have a square or rectangular cross section, and the ratio of the width in the first axial direction to the length in the second axial direction may be easily changed. Incidentally, the generally used optical fiber has a circular cross-sectional shape. When the laser beam passes through the optical fiber having the core having a circular sectional shape as described above, the homogenization is not achieved, and the energy of the laser beam passing through the core is Gaussian distribution. Therefore, it is preferable that the cross-sectional shape of the core 251 is rectangular. However, the cross-sectional shape of the core 251 is not limited to a quadrangle, and may be included in one embodiment as long as the energy of the laser beam passing through the core 251 can be homogenized.

The cladding 252 may extend in the longitudinal direction of the core 251 so as to surround the outer circumferential surface of the core 251.

The core 251 and the cladding 252 may be formed of a material having a predetermined refractive index. Specifically, the core 251 and the cladding 252 may be made of quartz, glass, plastic, or an alloy thereof. However, the material of the core 251 and the cladding 252 is not limited thereto, and may include all the insulator materials having a predetermined refractive index and capable of minimizing the loss of the laser beam. The cladding 252 may be made of a material having a lower refractive index than the core 251 so that the laser beam incident on the core 251 may be totally reflected on the interface between the core 251 and the cladding 252. At this time, a laser unit (not shown) capable of irradiating a laser beam to the inner hollow portion of the core 251 is positioned at the entrance side of the optical fiber 250 and may be provided to irradiate the laser beam.

The core 251 and the cladding 252 are integrated to form one optical fiber 250. The laser beam incident on the inside of the core 251 passes through the interface between the core 251 and the cladding 252 And is moved to the exit side. Specifically, light has a property that it has a short wavelength and goes straight, and has a property of being reflected or refracted. Therefore, the laser beam incident on the inside of the core 251 is totally reflected as the refractive index of the interface between the core 251 and the cladding 252 changes, and moves to the exit side. At this time, the laser beam which is totally reflected from the interface between the core 251 and the cladding 252 can be homogenized while passing through the core 251.

As described above, the laser beam that has passed through the optical fiber 250 and homogenized becomes uniform in energy according to the position in the irradiation region. That is, the energy of the laser beam is uniform from the center of the irradiation region to the edge of the irradiation region, and the energy of the laser beam is abruptly decreased when the irradiation region is out of the irradiation region. Therefore, it is possible to prevent a failure due to passive element thermal shock located at the center of the irradiation area of the laser beam, or a problem that the passive element located at the edge of the irradiation area is not adhered to the substrate due to energy shortage. In addition, the energy rapidly decreases outside the irradiation region, thereby preventing the substrate 211 located outside the irradiation region and the occurrence of thermal shock to the IC element vulnerable to heat or the like.

After step S141, a step S142 in which the irradiation area of the laser beam is adjusted may be performed. Specifically, the size and shape of the semiconductor package 214 fixed to the substrate 211 can be changed according to the semi-finished product. Also, the semiconductor package 214 includes a passive element, an IC element, and the like, and the IC element can easily deform due to the thermal energy of the laser beam. Accordingly, in step S142, the irradiation area of the laser beam may be adjusted to irradiate a laser beam corresponding to the shape and size of the semiconductor package 214 or to selectively irradiate the laser beam according to elements included in the semiconductor package 214 have. Here, the irradiation region can refer to an area where the laser beam is irradiated when the substrate is irradiated on the body 210. [ Hereinafter, a method of adjusting the irradiation area of the laser beam using the optical part 240 according to one embodiment will be described in detail.

The optical portion 240 according to one embodiment includes a convex lens 241, a cylindrical lens 242 and a focusing lens 245. The optical portion 240 is positioned at the exit side of the optical fiber 250, The irradiation area can be adjusted when this substrate is irradiated on the body 210. [

The convex lens 241 may be provided adjacent to the exit side of the optical fiber 250 that homogenizes the laser beam to condense the laser beam to be irradiated. Specifically, when the laser beam passes through the optical fiber 250 and is homogenized and then passes through the exit side of the optical fiber 250, the laser beam may diverge and scatter. Therefore, the convex lens 241 can condense the homogenized beam so as not to diverge, and can transmit the condensed laser beam to the cylindrical lens 242. At this time, the irradiation region of the laser beam condensed by the convex lens 241 may be formed to have the same shape as that of the core 251 passed through for homogenization of the laser beam. For example, the irradiation region of the laser beam that has passed through the convex lens 241 can form the first irradiation region A1. Here, the convex lens 241 may be replaced with a lens capable of condensing the laser beam emitted from the exit side of the optical fiber 250. [

The cylindrical lens 242 includes a first cylindrical lens 243 and a second cylindrical lens 244 and can be adjusted so that the irradiation area of the laser beam passed through the convex lens 241 has a predetermined shape.

The first cylindrical lens 243 can adjust the length of the laser beam passing through the convex lens 241 in the first axial direction. The first cylindrical lens 243 may be provided in a shape cut along the longitudinal axis in a state where the cylinder is upright. The first cylindrical lens 243 is provided under the convex lens 241, and the first cylindrical lens 243 Can be arranged so as to face upward. The irradiation area of the laser beam transmitted through the first cylindrical lens 243 may be provided such that the length in the first axial direction is reduced. Here, for example, in the laser beam transmitted through the first cylindrical lens 243, the length in the first axial direction of the irradiation area is reduced so that the irradiation area from the first irradiation area A1 to the second irradiation area A2 is deformed .

The second cylindrical lens 244 can adjust the length of the laser beam passing through the first cylindrical lens 243 in the second axial direction. In this case, the second axial length may be orthogonal to the first axial length, and the second cylindrical lens 244 may be provided in the same shape as the first cylindrical lens 243. The second cylindrical lens 244 is disposed below the first cylindrical lens 243 and is disposed so that the convex surface thereof faces upward, and may be arranged so that the direction thereof is orthogonal to the first cylindrical lens 243. The irradiation area of the laser beam transmitted through the second cylindrical lens 244 may be provided so that the length in the second axial direction is reduced. For example, the length of the irradiation area in the second axial direction of the laser beam transmitted through the second cylindrical lens 244 may be reduced, and the irradiation area may be deformed from the second irradiation area A2 to the third irradiation area A3 .

The first cylindrical lens 243 and the second cylindrical lens 244 thus provided can easily adjust the shape of the irradiation area of the laser beam. In this case, the first cylindrical lens 243 and the second cylindrical lens 244 are not limited to the embodiment, and may be configured to easily adjust the length in the first axis direction and the length in the second axis direction of the irradiation area of the laser beam May be included in one embodiment. For example, the first cylindrical lens 243 and the second cylindrical lens 244 may be arranged such that the convex surface faces downward, and the concave lens having the concave upper surface may be disposed between the first cylindrical lens 243 and the second cylindrical lens 244 As shown in Fig. In this case, the irradiation area of the laser beam can be adjusted to increase the first axial length and the second axial length. That is, the first cylindrical lens 243 and the second cylindrical lens 244 adjust the lengths of the irradiation region in the first axial direction and the second axial direction to adjust the length and width ratio of the irradiated region All of which may be included in one embodiment.

In addition, the positions of the first cylindrical lens 243 and the second cylindrical lens 244 can be changed from each other. That is, after the laser beam transmitted through the convex lens 241 passes through the second cylindrical lens 244 first than the first cylindrical lens 243, after the length of the irradiated area in the second axial direction is adjusted, The direction length may be adjusted.

On the other hand, the focusing lens 245 can adjust the irradiation area of the laser beam passing through the cylindrical lens 242 to have a predetermined width. Specifically, the focusing lens 245 can maintain the shape of the irradiation region formed by the cylindrical lens 242, but can increase or decrease the width of the irradiation region. That is, the focusing lens 245 can increase or decrease the width of the irradiation area while maintaining the shape by maintaining the ratio of the length and the length of the irradiation area formed by the cylindrical lens 242. For example, the third irradiation area A3, which is the irradiation area of the laser beam transmitted through the second cylindrical lens 244, is enlarged by using the focusing lens 245 so as to have the width of the fourth irradiation area A4 . It goes without saying that the focusing lens 245 may reduce the area of the third irradiation area A3. In addition, the focusing lens 245 may be provided to be replaceable.

The optical part 240 further includes an elevating module 246 which elevates or lowers the first cylindrical lens 243, the second cylindrical lens 244 and the focusing lens 245 individually The irradiation area of the laser beam can be adjusted. Specifically, the lift module 246 can adjust the first axial length when the first irradiation area A1 is deformed into the second irradiation area A2 by raising or lowering the first cylindrical lens 243 . As the first cylindrical lens 243 is elevated, the length in the first axial direction of the second irradiation area A2 is largely reduced. As the first cylindrical lens 243 is lowered, The biaxial direction length is reduced to a small extent.

The lifting module 246 can adjust the second axial length when the second irradiation area A2 is deformed into the third irradiation area A3 by raising or lowering the second cylindrical lens 244, The lift module 246 can adjust the width of the fourth irradiation area A4 when the third irradiation area A3 is deformed into the fourth irradiation area A4 by raising or lowering the focusing lens 245. [ The adjustment of the second axial length in accordance with the upward or downward movement of the second cylindrical lens 244 and the adjustment of the width of the irradiation area due to the upward or downward movement of the focusing lens 245 are similar to the first cylindrical lens 243 It will be easily understood by those skilled in the art, so detailed description thereof will be omitted.

After step S142, the step S143 in which the solder ball S located in the irradiation area by the laser beam is reflowed and the semiconductor package 214 is fixed to the substrate 211 may be performed. That is, the laser beam homogenized in step S141 passes through the optical part 240 set in step S142, the irradiation area is adjusted, and the laser beam whose irradiation area is adjusted is irradiated on the substrate 210 with the substrate in step S143, 211 and the semiconductor package 214 are fixed.

Further, in step S143, one or more measurement locations may be designated in the irradiation area. The temperature of the solder ball S placed in the seating groove 212 located in the measurement location can be measured in real time. For example, the temperature of the solder ball S may be measured in real time by the temperature measuring unit 260 located at the upper part of the transferring unit 220, and the temperature measuring unit 260 may be formed by an infrared camera, . The temperature measuring unit 260 may control the energy irradiation intensity of the laser beam so that the solder ball S located at the measurement location maintains a predetermined normal temperature range. Further, when the temperature of the solder ball S located in the measurement location is out of the preset normal temperature range, it is possible to lower the defect rate of the semi-finished product by informing the user that the substrate has a failure in the body 210.

10 is a longitudinal sectional view showing a substrate structure manufactured by a manufacturing method according to a laser reflow method according to an embodiment of the present invention.

10, the substrate structure 300 manufactured through the laser reflow method is provided with a plurality of mounting grooves 312 on which the solder balls S are mounted, and a metal layer And a semiconductor package 314 fixed to the upper portion of the substrate 311. The semiconductor package 311 is mounted on the upper surface of the substrate 311, As described above, the substrate structure 300 manufactured through the laser reflow process requires only about 1 second to 2 seconds for the solder ball S to reflow. That is, when the laser reflow method is used, the substrate structure 300 can be produced quickly, which is economical.

In addition, when the laser reflow method is used, the semiconductor package 314 such as a passive element, an IC element, or the like can be fixed on one substrate 311, the volume of the substrate structure 300 is reduced, It is possible to prevent the problem that defects are generated due to thermal deformation.

It will be understood by those skilled in the art that the foregoing description of the present invention is for illustrative purposes only and that those of ordinary skill in the art can readily understand that various changes and modifications may be made without departing from the spirit or essential characteristics of the present invention. will be. It is therefore to be understood that the above-described embodiments are illustrative in all aspects and not restrictive. For example, each component described as a single entity may be distributed and implemented, and components described as being distributed may also be implemented in a combined form.

The scope of the present invention is defined by the appended claims, and all changes or modifications derived from the meaning and scope of the claims and their equivalents should be construed as being included within the scope of the present invention.

210: substrate contact with the substrate 211: substrate
212: seating groove 213: metal layer
214: semiconductor package 220: transfer part
221: conveying member 222: conveying module
223: Vacuum module 224: Heater module
225: cooling module 230:
231: pressure load 232: pressure control module
240: optical part 241: convex lens
242: Cylindrical lens 243: First cylindrical lens
244: second cylindrical lens 245: focusing lens
246: lift module 250: optical fiber
251: core 252: cladding
260: temperature measuring unit 300: substrate structure
310: substrate 311: seat groove
312: metal layer 320: semiconductor package

Claims (13)

a) preparing a substrate on which a plurality of solder balls are mounted;
b) seating the semiconductor package on top of the solder ball;
c) transferring the substrate to an irradiating position; And
d) irradiating a laser beam onto the solder ball located at the irradiation position to fix the semiconductor package to the substrate,
In the step d), the energy of the laser beam is homogenized, the irradiated region of the homogenized laser beam is adjusted so as to correspond to the shape of the semiconductor package,
The step c)
c1) placing the substrate on a transfer body; And
c2) moving or stopping the carrier so that each substrate stays at the irradiation position for a predetermined time,
In the step c1), a pressure is applied to a portion of the substrate on which the solder ball is not positioned, so that the lower surface of the substrate is closely contacted to the transfer body by using a pressure-
The pressure-
At least one pressing rod for applying pressure to an upper surface of the substrate; And
And a pressure control module for controlling a position of the pressing rod,
Wherein the pressure control module controls the pressing rod to apply pressure to a portion of the upper surface of the substrate where the solder ball is not located. The method according to claim 1,
The step a)
a1) machining a seating groove on an upper surface of the substrate;
a2) forming a metal layer on a surface of the seating groove; And
a3) placing the solder balls in the mounting recesses. delete The method according to claim 1,
Wherein, in the step c1), the substrate is vacuum-adsorbed so that the substrate adheres to the upper surface of the transfer body. 5. The method of claim 4,
Wherein the transfer body is provided with a porous vacuum chuck. delete The method according to claim 1,
The step d)
d1) the energy of the laser beam is homogenized;
d2) adjusting an irradiation area of the laser beam; And
d3) reflowing the solder balls located within the irradiation region by the laser beam to fix the semiconductor package to the substrate. 8. The method of claim 7,
Wherein in the d3), at least one measurement location is designated in the irradiation area, and the solder ball located at the measurement location is measured in real time. 9. The method of claim 8,
Wherein in step d3), the energy irradiation intensity of the laser beam is controlled so that the solder ball located at the measurement location maintains a predetermined normal temperature range. 9. The method of claim 8,
And in the step d3), when the temperature of the solder ball located in the measurement location is out of a predetermined normal temperature range, the user is notified. A substrate structure manufactured by the laser reflow method according to any one of claims 1, 2, 4, 5, and 10 to 10,
A substrate having a plurality of seating grooves on which the solder balls are mounted, the substrate having a metal layer formed on a surface of the seating grooves; And
And a semiconductor package secured to the top of the substrate. 12. The method of claim 11,
And the diameter of the seating groove is 0.5 to 1.0 mm. 12. The method of claim 11,
Wherein the metal layer is made of a conductive metal material.
KR1020160072639A 2016-06-10 2016-06-10 Laser reflow method and substrate structure thereby KR101818918B1 (en)

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Publication number Priority date Publication date Assignee Title
WO2014045828A1 (en) 2012-09-24 2014-03-27 独立行政法人産業技術総合研究所 Method for producing semiconductor device and device for producing semiconductor

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014045828A1 (en) 2012-09-24 2014-03-27 独立行政法人産業技術総合研究所 Method for producing semiconductor device and device for producing semiconductor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20200050725A (en) 2018-11-02 2020-05-12 모스탑주식회사 Laser assembly with uniform intensity distribution and easy to adjust aspect ratio

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