KR101816983B1 - Ceramic circuit board and method of manufacturing the same - Google Patents

Ceramic circuit board and method of manufacturing the same Download PDF

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Publication number
KR101816983B1
KR101816983B1 KR1020160003313A KR20160003313A KR101816983B1 KR 101816983 B1 KR101816983 B1 KR 101816983B1 KR 1020160003313 A KR1020160003313 A KR 1020160003313A KR 20160003313 A KR20160003313 A KR 20160003313A KR 101816983 B1 KR101816983 B1 KR 101816983B1
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South Korea
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metal
layer
bonding layer
bonding
metal layer
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KR1020160003313A
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Korean (ko)
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KR20170083874A (en
Inventor
박미소
이은복
김동래
강현민
유보나
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주식회사 케이씨씨
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Priority to KR1020160003313A priority Critical patent/KR101816983B1/en
Priority to PCT/KR2017/000153 priority patent/WO2017122966A1/en
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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/38—Improvement of the adhesion between the insulating substrate and the metal
    • H05K3/389—Improvement of the adhesion between the insulating substrate and the metal by the use of a coupling agent, e.g. silane
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/03—Use of materials for the substrate
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/03—Use of materials for the substrate
    • H05K1/0306—Inorganic insulating substrates, e.g. ceramic, glass
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/09—Use of materials for the conductive, e.g. metallic pattern
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/38—Improvement of the adhesion between the insulating substrate and the metal
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/38—Improvement of the adhesion between the insulating substrate and the metal
    • H05K3/382—Improvement of the adhesion between the insulating substrate and the metal by special treatment of the metal

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Manufacturing Of Printed Wiring (AREA)
  • Parts Printed On Printed Circuit Boards (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Inorganic Chemistry (AREA)

Abstract

The present invention provides a ceramic substrate comprising a ceramic substrate, a bonding layer disposed on the ceramic substrate and comprising NiCr, a metal layer disposed on the bonding layer, And a metal foil disposed on the metal layer, and a method of manufacturing the same.

Description

TECHNICAL FIELD [0001] The present invention relates to a ceramic circuit board and a method of manufacturing the ceramic circuit board.

The present invention relates to a ceramic circuit board and a method of manufacturing the ceramic circuit board, and more particularly, to a ceramic circuit board and a method of manufacturing the ceramic circuit board. The ceramic circuit board includes a ceramic substrate, And a method of manufacturing the same.

In recent years, with the advancement of power electronics, the amount of heat generated by semiconductor devices that incorporate power semiconductors as they are integrated and miniaturized is also increasing. In order to efficiently dissipate the heat generated therefrom, bonding of ceramic substrate and metal in a semiconductor device is widely used. Unlike a general substrate using phenol or epoxy as a main material, ceramic substrates are made of alumina (Al 2 O 3 ), aluminum nitride (AlN), silicon nitride (Si 3 N 4 ), silicon carbide (SiC) Zirconia (ZrO 2 ) and other ceramics are used as substrate materials to withstand high temperature and high current and exhibit high insulation. For this reason, a ceramic substrate bonded with a metal is used in various fields such as a power semiconductor, an insulated gate bipolar transistor (IGBT), a high output light emitting diode (LED), and a solar cell module.

Methods for bonding a ceramic substrate to a metal include a Mo-Mn method, an active metal bonding method, and a direct bonding method. For example, a direct bonding method in which a surface-oxidized copper plate is placed in contact with a ceramic substrate, and then the copper plate is melted by heating at a temperature lower than the melting point of copper and higher than the eutectic point of copper and oxygen, bonding copper: DBC) has been developed and commercialized.

On the other hand, a ceramic circuit board manufactured by an active metal bonding method in which a metal circuit board is bonded via a filler layer is also developed and applied to power semiconductors in order to secure more heat dissipation, strong durability and improved electrical stability. In the case of the active metal bonding method, since the bonding process temperature is lower than that of the direct bonding method, the residual stress of the metal-ceramics is small and the bonding layer is a soft metal. Therefore, the active metal bonding method has high reliability against thermal shock or thermal change. Micro voids are less likely to occur and exhibit improved electrical properties. However, in the case of a ceramic circuit board obtained by the active metal bonding method, a reaction layer is formed by reaction with ceramics when the active metal is bonded. At this time, the structure of the reaction layer is weak and the mechanical strength is lowered.

To overcome the problems of the active metal bonding method, various studies have been conducted on the bonding layer, but the effects obtained from the viewpoint of mechanical properties and reliability are not sufficient.

Korean Patent Publication No. 2013-0132684 Korean Patent No. 10-0867756

The present invention provides a ceramic circuit board improved in durability, thermal reliability, and electrical insulation and a method of manufacturing the ceramic circuit board.

A ceramic circuit board according to an embodiment of the present invention includes:

A ceramic substrate;

A bonding layer disposed on the ceramic substrate and including NiCr;

A metal layer disposed on the bonding layer; And

And a metal foil disposed on the metal layer, wherein the weight ratio of Ni: Cr in the bonding layer is 90:10 to 75:25.

The fact that each member of the ceramic circuit board according to the embodiment of the present invention is "arranged " means that the member is disposed on the member below it, and if it does not deviate from the technical idea of the present invention, (Including, for example, another functional layer) interposed therebetween is not excluded.

The ceramic substrate in one embodiment of the present invention is selected from the group consisting of alumina (Al 2 O 3), aluminum nitride (AlN), silicon nitride (Si 3 N 4) or silicon carbide (SiC), and zirconia (ZrO 2) Or more.

According to an embodiment of the present invention, the thickness of the bonding layer is in the range of 0.015 to 1.0 mu m.

In one embodiment of the present invention, the metal layer includes Cu, and the thickness of the metal layer is in the range of 0.05 to 1.0 mu m.

According to an embodiment of the present invention, the metal foil includes at least one selected from the group consisting of Cu, Au, Ni and Ag, and the thickness of the metal foil is in the range of 100 to 600 mu m.

In one embodiment of the present invention, the surface roughness (R z ) of at least one of the surfaces of the metal foil, more specifically both surfaces, may be 3.0 탆 or less, although not particularly limited thereto.

In addition, electronic components can be mounted on the ceramic circuit board of the present invention, and can be used in industrial fields such as power modules.

According to another embodiment of the present invention, there is provided a method of manufacturing a ceramic circuit board,

A bonding layer containing NiCr is disposed on a ceramic substrate,

A metal layer is disposed on the bonding layer,

And disposing a metal foil on the metal layer,

And pre-oxidizing the metal layer.

At least one of the bonding layer and the metal layer may be formed by a method selected from the group consisting of a sputtering method, a printing method, and a chemical plating method.

The pre-oxidation may be performed by heat treatment at a temperature ranging from 100 to 1000 ° C.

The ceramic circuit board of the present invention has excellent mechanical properties and improved electrical reliability, so that the metal film bonded to the ceramic substrate is not peeled off even with repeated heat emission, and excellent insulating property is secured, so that it can be applied to semiconductor devices of various fields.

1 is a cross-sectional view showing a cross-sectional shape of a ceramic circuit board according to an embodiment of the present invention.
2 is a cross-sectional view showing a cross-sectional shape of a ceramic circuit board according to another embodiment of the present invention.

1, a ceramic circuit board 100 according to an embodiment of the present invention includes a ceramic substrate 101, a bonding layer 102 disposed on the ceramic substrate 101 and containing NiCr, A metal layer 103 disposed on the bonding layer 102 and a metal foil 104 disposed on the metal layer 103. The weight ratio of Ni to Cr in the bonding layer is 90:10 to 75:25 Lt; / RTI >

2, the ceramic circuit board 200 according to another embodiment of the present invention may include not only one side of the ceramic substrate 201 but also a bonding layer / metal layer / metal foil structure on both sides, A bonding layer 202 on both sides of the ceramic substrate 201 and a metal layer 203 disposed on the bonding layer 202 and a metal foil 204 disposed on the metal layer 203 It is possible.

Hereinafter, the respective members of the ceramic circuit board of the present invention will be described with reference to Fig. 1 for convenience.

<Ceramic substrate>

First, a ceramic substrate 101, the material used in the present invention is not particularly limited to, alumina (Al 2 O 3), aluminum nitride (AlN), silicon nitride (Si 3 N 4), silicon carbide (SiC), zirconia (ZrO 2 ). Of these, alumina which is inexpensive and has excellent mechanical strength or aluminum nitride having excellent thermal conductivity can be used. The thickness of the ceramic substrate 101 is not particularly limited, but may be in the range of 0.2 to 1.0 mm, which is the thickness of a commonly used ceramic substrate.

<Bonding Layer>

A bonding layer 102 is disposed for improving adhesion with the ceramic substrate 101. The bonding layer 102 may include NiCr as a metal having excellent adhesion to the ceramic substrate.

The weight ratio of Ni to Cr in the NiCr contained in the bonding layer 102 may be in the range of 90:10 to 75:25, It is possible to minimize the residue that can be generated after the process is performed while optimizing the strength.

The thickness of the bonding layer 102 is not particularly limited, but may be in the range of 0.015 to 1.0 mu m according to one embodiment of the present invention. The thickness of the bonding layer 102 is less than 0.015 mu m and the thickness of the bonding layer 102 is too thin to adversely affect the bonding strength with the ceramic substrate. When the thickness of the bonding layer 102 exceeds 1.0 mu m, Side effects such as increased resistance may occur.

The method for forming the bonding layer 102 may be a sputtering method, a printing method, or a chemical plating method. However, the DC sputtering method may be used to form the bonding layer 102 in view of high film growth rate and easy thickness control. Can be used.

As the conditions in the above DC sputtering method, electric power is 1.0 to 2.0 kW, voltage is 400 to 550 V, electric current is 2.0 to 4.0 A, Ar amount is 100 to 300 sccm, and the pressure is 3.0 to 4.0 mTorr .

<Metal layer>

The metal layer 103 may be disposed between the bonding layer 102 and the metal foil 104 to improve the adhesion strength between the metal foil 104 and the ceramic substrate 101 and may include Cu.

The metal layer 103 according to the present invention may be preliminarily oxidized before the metal foil 104 is bonded to the ceramic substrate 101 including the bonding layer 102. The preliminary oxidation may be performed at a temperature range of 100 to 1000 ° C Can be carried out by heat treatment in the above-mentioned process. The pre-oxidation increases the oxygen content present on the surface of the metal layer 103, which can further improve the bonding strength with the metal foil 104. This improvement in bonding properties can reduce the micropores existing between the interfaces of the layers disposed on the ceramic circuit board, thereby securing partial discharge generation and excellent electrical insulation.

The thickness of the metal layer 103 is not particularly limited, but may be in the range of 0.05 to 1.0 mu m according to one embodiment of the present invention. If the thickness of the metal layer 103 is less than 0.05 탆, the improvement of the adhesion force is insufficient. On the contrary, if the thickness exceeds 1.0 탆, the conductive layer of the ceramic circuit substrate may be deteriorated due to an increase in thickness.

The method for forming the metal layer 103 may be, for example, a sputtering method, a printing method, or a chemical plating method. However, the DC sputtering method may be used in view of easy thickness control.

<Metal foil>

A bonding layer 102 including NiCr is disposed on the ceramic substrate 101 by a sputtering or printing method and then a metal layer 103 is disposed on the bonding layer 102. On the metal layer 103, The metal foil 104 and the metal foil 104 are bonded to each other to bond the metal foil and the ceramic substrate.

The metal foil 104 may be at least one selected from the group consisting of Cu, Au, Ni and Ag, and may preferably include Cu. The metal foil containing Cu may be a rolled copper foil or an electrolytic copper foil.

The metal foil 104 used in the present invention may have a 10-point average roughness (R z ) as shown in JIS B0601 of 3.0 mm or less on both sides, 2.0 m or less, or 0.3 m or less in surface roughness. In the present invention, not only the metal foil having a smooth surface as described above can be disposed using the bonding layer and the metal layer, but also sufficient adhesion property and electrical insulation with the ceramic substrate can be ensured.

The thickness of the metal foil 104 is not particularly limited, but may be in the range of 100 to 600 mu m according to one embodiment of the present invention. If the thickness of the metal foil 104 is less than 100 m, the thickness of the metal foil 104 may be too thin to affect the durability of the metal foil 104. Conversely, if the thickness of the metal foil 104 is more than 600 m, The efficiency of the ceramic circuit board 100 may be lowered and the adhesion with the metal layer 103 may be lowered. By setting the thickness of the metal foil 104 according to the embodiment of the present invention within the range of 100 to 600 占 퐉, the durability of the substrate produced by maximizing the adhesion with the bonding layer 103 can be improved and the electrical insulation can be improved.

A method of manufacturing a ceramic circuit board according to the present invention includes:

A bonding layer containing NiCr is disposed on a ceramic substrate,

A metal layer is disposed on the bonding layer,

Disposing a metal foil on the metal layer, and performing pre-oxidation on the metal layer.

At least one of the bonding layer and the metal layer may be formed by a sputtering method, a printing method, or a chemical plating method. Among them, the DC sputtering method is most suitable.

The pre-oxidation is carried out before the deposition of the metal foil, and can be carried out by heat treatment at a temperature range of 100 to 1000 ° C.

Further, the metal foil can be bonded to the ceramic substrate including the bonding layer and the pre-oxidized metal layer by energy ray irradiation and / or heat treatment on the bonding layer, the metal layer and the metal foil disposed on the ceramic substrate, , It can be carried out at a temperature in the range of 800 to 1200 ° C.

According to one embodiment of the present invention, the bonding layer, the metal layer and the metal foil may be disposed on only one side of the ceramic substrate, but not limited thereto, and the layers may be formed on both sides of the ceramic substrate. For example, the bonding layer 202, the metal layer 203, and the metal foil 204 may be formed on both surfaces of the ceramic substrate 201, as shown in Fig. Specifically, a bonding layer 202, a metal layer 203 and a metal foil 204 are formed on one side of the ceramic substrate 201, and at the same time or thereafter, a bonding layer 202 (not shown) is formed on the other side of the ceramic substrate 201 ), A metal layer 203 and a metal foil 204 can be formed.

In Fig. 2, the bonding layer 202, the metal layer 203, and the metal foil 204 formed on both sides of the ceramic substrate 201 are denoted by the same reference numerals for convenience of description. The material constituting each of the bonding layer 202, the metal layer 203 and the metal foil 204 satisfies the range of the present invention, and is not limited to the same material.

The physical properties of the ceramic circuit board manufactured by the above method and the ceramic circuit board prepared by the conventional method such as TCT (thermal cycle test), partial discharge, bonding strength and warpage were measured.

TCT is a thermal stability test, specifically, a thermal shock test of 1000 cycles was performed at a temperature range of -55 to 150 ° C, and the number of times of delamination of the ceramic circuit board was confirmed by scanning acoustic microscopy.

Specifically, a partial discharge tester (KPD2050, manufactured by Kyushu Denshi Kogyo Co., Ltd.) was used for the partial discharge, and specifically, a voltage of 0.50 kV / s was applied to the ceramic circuit board from 0 kV to 5 kV in one step The voltage of 5 kV is maintained for a certain period of time in the second stage, then the voltage is decreased to 4.6 kV at the rate of 0.04 kV / s in the third stage, the voltage of 4.6 kV is maintained for a predetermined time in the fourth stage, And the voltage was simply dropped to 0 kV at a rate of 0.46 kV / s. In this case, the energization and insulation were checked in step 2, and the discharge charge was measured in step 4.

In addition, the bonding strength test was conducted with a universal testing machine (UTM), and the deflection amount of the large ceramic metal bonded substrate was measured with a three-dimensional measuring device.

Hereinafter, the present invention will be described in more detail with reference to the following examples. However, the following examples are intended to illustrate the present invention, but the present invention is not limited by these examples.

Example  And Comparative Example

Example  1 to 4 and Comparative Example  1 to 3: metal bonded alumina ( Al 2 O 3 ) Preparation of substrate and evaluation of physical properties

[Example 1]

As the ceramic substrate, an alumina substrate having a thickness of 0.38 mm manufactured by a tape casting method was used. As the bonding layer, Ni x Cr 1- x (x = 0.8) was formed to a thickness of 0.05 μm by DC sputtering Respectively. Subsequently, Cu was formed to a thickness of 0.1 탆 by DC sputtering as a metal layer, and pre-oxidation was performed at 400 캜 for 30 minutes. A copper metal foil having an average surface roughness (R z ) of 1.5 탆 and a thickness of 300 탆 was placed on the pre-oxidized metal layer and then heat-treated at 1070 캜 to form a metal bonded alumina substrate.

[Examples 2 and 3]

A metal bonded alumina substrate was prepared in the same manner as in Example 1, except that the thickness of the metal layer was changed as shown in Table 1 below.

[Example 4]

A metal bonded alumina substrate was prepared in the same manner as in Example 1, except that the metal foil was oxidized at 400 ° C for 15 minutes instead of the pre-oxidation of the metal layer.

[Comparative Example 1]

A metal bonded alumina substrate was prepared by directly bonding a copper foil having an average surface roughness (R z ) of 1.5 탆 and a thickness of 300 탆 to an alumina substrate having a thickness of 0.38 mm without arranging a bonding layer and a metal layer.

[Comparative Example 2]

A metallized alumina substrate was prepared in the same manner as in Example 1, except that the bonding layer was changed to Ti.

[Comparative Example 3]

A metal bonded alumina substrate was prepared in the same manner as in Example 1, except that the bonding layer was changed to Ni x Cr 1 -x (x = 0.95).

The TCT, the partial discharge, the bonding strength and the substrate deflection amount in the above Examples and Comparative Examples were measured and shown in Table 1 below.

Example 1 Example 2 Example 3 Example 4 Comparative Example 1 Comparative Example 2 Comparative Example 3 Adhesive layer (占 퐉) 0.05 0.05 0.05 0.05 - 0.05 0.05 Metal layer (탆) 0.1 0.5 1.0 0.1 - 1.0 1.0 Metal layer pre-oxidation ○ ○ ○ X X ○ ○ Bond strength (N / mm) 23.7 9.5 3.3 22.4 7.5 2.6 4.3 TCT (times) 90 65 55 90 60 60 60 Partial discharge (pC) 0.28 0.42 0.25 0.81 2.27 41.22 41.88 Substrate warpage (mm) 0.5 0.5 0.5 0.6 One 0.7 0.7

* TCT test: -55 to 150 ° C 1,000 cycles

* Partial discharge test: discharge charge at 4.6 kV

* Substrate deflection test: Maximum deflection - Minimum deflection

As shown in Table 1, the ceramic circuit boards of Examples 1 to 4, in which an adhesive layer containing NiCr was disposed between a ceramic substrate and a metal foil, a metal layer was formed, and the metal layer was pre-oxidized and a copper foil was bonded, The overall physical properties such as TCT, partial discharge, bonding strength and substrate warpage were superior to those of 1 to 3.

Specifically, in the durability of the ceramic circuit board, when Comparative Example 1 in which TCT, bonding strength and substrate warpage were directly bonded to each other and Comparative Example 2 and 3 in which the bonding layer composition was different were used It can be confirmed that it is greatly improved. In addition, in the pre-oxidation, Example 1 in which the metal layer is pre-oxidized exhibits excellent partial discharge properties as compared with Example 4 in which the metal foil is pre-oxidized, thereby improving bonding properties through pre-oxidation and decreasing micro- And it was confirmed that it is more effective for the metal layer.

100, 200: Ceramic circuit board
101, 201: ceramic substrate
102, 202: bonding layer
103, 203: metal layer
104, 204: metal foil

Claims (12)

A ceramic substrate;
A bonding layer disposed on the ceramic substrate and including NiCr;
A metal layer disposed on the bonding layer; And
And a metal foil directly bonded on the metal layer,
The weight ratio of Ni: Cr in the bonding layer is 90:10 to 75:25,
Wherein the metal foil has a thickness of 100 to 600 mu m. The method according to claim 1,
The ceramic substrate comprises alumina (Al 2 O 3), aluminum nitride (AlN), silicon nitride (Si 3 N 4) or silicon carbide (SiC), and zirconia at least one element selected from the group consisting of (ZrO 2) Lt; / RTI &gt; The method according to claim 1,
Wherein the metal layer comprises Cu. The method according to claim 1,
Wherein the metal foil comprises at least one selected from the group consisting of Cu, Au, Ni and Ag. The method according to claim 1,
Wherein the thickness of the bonding layer is in the range of 0.015 to 1.0 mu m. The method according to claim 1,
Wherein the thickness of the metal layer is in the range of 0.05 to 1.0 mu m. delete The method according to claim 1,
Wherein a surface roughness (R z ) of at least one surface of the metal foil is 3.0 m or less. An electronic material in which an electronic component is mounted on the ceramic circuit board according to any one of claims 1 to 6 and claim 8. A bonding layer containing NiCr is disposed on a ceramic substrate,
A metal layer is disposed on the bonding layer,
And directly bonding a metal foil on the metal layer,
Wherein the metal layer is pre-oxidized,
The weight ratio of Ni: Cr in the bonding layer is 90:10 to 75:25,
Wherein the metal foil has a thickness of 100 to 600 占 퐉. The method of claim 10,
Wherein at least one of the bonding layer and the metal layer is formed by a method selected from the group consisting of a sputtering method, a printing method, and a chemical plating method. The method of claim 10,
Wherein the preliminary oxidation is performed by heat treatment at a temperature range of 100 to 1000 占 폚.
KR1020160003313A 2016-01-11 2016-01-11 Ceramic circuit board and method of manufacturing the same KR101816983B1 (en)

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PCT/KR2017/000153 WO2017122966A1 (en) 2016-01-11 2017-01-05 Ceramic circuit board and method for manufacturing same

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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005317836A (en) * 2004-04-30 2005-11-10 Nitto Denko Corp Wiring circuit board and method of manufacturing the same
KR100867756B1 (en) * 2008-04-03 2008-11-10 주식회사 케이아이자이맥스 Method for manufacturing substrate of ceramics pcb using high rate and high density magnetron sputtering way
KR101427636B1 (en) * 2013-04-10 2014-08-07 주식회사 아모센스 Led substrate and method for manufacturing the same and led package comprising the same

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR960000391B1 (en) * 1989-10-25 1996-01-06 가부시끼가이샤 미하마 세이사꾸쇼 Medical treatment apparatus using ozone gas
JP5242710B2 (en) * 2010-01-22 2013-07-24 古河電気工業株式会社 Roughening copper foil, copper clad laminate and printed wiring board

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005317836A (en) * 2004-04-30 2005-11-10 Nitto Denko Corp Wiring circuit board and method of manufacturing the same
KR100867756B1 (en) * 2008-04-03 2008-11-10 주식회사 케이아이자이맥스 Method for manufacturing substrate of ceramics pcb using high rate and high density magnetron sputtering way
KR101427636B1 (en) * 2013-04-10 2014-08-07 주식회사 아모센스 Led substrate and method for manufacturing the same and led package comprising the same

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