KR101815368B1 - 포토마스크, 포토마스크 세트, 포토마스크의 제조 방법, 및 표시 장치의 제조 방법 - Google Patents

포토마스크, 포토마스크 세트, 포토마스크의 제조 방법, 및 표시 장치의 제조 방법 Download PDF

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KR101815368B1
KR101815368B1 KR1020160019967A KR20160019967A KR101815368B1 KR 101815368 B1 KR101815368 B1 KR 101815368B1 KR 1020160019967 A KR1020160019967 A KR 1020160019967A KR 20160019967 A KR20160019967 A KR 20160019967A KR 101815368 B1 KR101815368 B1 KR 101815368B1
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light
photomask
film
pattern
semi
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KR20160102904A (ko
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노보루 야마구찌
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호야 가부시키가이샤
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/66—Containers specially adapted for masks, mask blanks or pellicles; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • G03F1/56—Organic absorbers, e.g. of photo-resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/7025—Size or form of projection system aperture, e.g. aperture stops, diaphragms or pupil obscuration; Control thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70258—Projection system adjustments, e.g. adjustments during exposure or alignment during assembly of projection system
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70275—Multiple projection paths, e.g. array of projection systems, microlens projection systems or tandem projection systems
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
    • H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
    • H01L27/322—
    • H01L51/0011—

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  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Engineering & Computer Science (AREA)
  • Liquid Crystal (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
KR1020160019967A 2015-02-23 2016-02-19 포토마스크, 포토마스크 세트, 포토마스크의 제조 방법, 및 표시 장치의 제조 방법 Active KR101815368B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2015032683A JP6391495B2 (ja) 2015-02-23 2015-02-23 フォトマスク、フォトマスクセット、フォトマスクの製造方法、及び表示装置の製造方法
JPJP-P-2015-032683 2015-02-23

Publications (2)

Publication Number Publication Date
KR20160102904A KR20160102904A (ko) 2016-08-31
KR101815368B1 true KR101815368B1 (ko) 2018-01-04

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KR1020160019967A Active KR101815368B1 (ko) 2015-02-23 2016-02-19 포토마스크, 포토마스크 세트, 포토마스크의 제조 방법, 및 표시 장치의 제조 방법

Country Status (4)

Country Link
JP (1) JP6391495B2 (enrdf_load_stackoverflow)
KR (1) KR101815368B1 (enrdf_load_stackoverflow)
CN (1) CN105911812B (enrdf_load_stackoverflow)
TW (1) TWI622849B (enrdf_load_stackoverflow)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6716427B2 (ja) * 2016-11-07 2020-07-01 Hoya株式会社 フォトマスク、近接露光用フォトマスクの製造方法、及び、表示装置の製造方法
JP7080070B2 (ja) * 2017-03-24 2022-06-03 Hoya株式会社 フォトマスク、及び表示装置の製造方法
JP7261709B2 (ja) * 2019-09-13 2023-04-20 Hoya株式会社 フォトマスク、フォトマスクの製造方法及び表示装置の製造方法
JP6987912B2 (ja) * 2020-03-16 2022-01-05 アルバック成膜株式会社 マスクブランクス、位相シフトマスク、製造方法
CN111352294B (zh) * 2020-03-23 2021-10-22 昆山国显光电有限公司 掩模版、显示面板及掩模版的制备方法
JP6993530B1 (ja) * 2020-12-25 2022-01-13 株式会社エスケーエレクトロニクス フォトマスク、フォトマスクの製造方法、表示装置の製造方法
CN115704993A (zh) * 2021-08-04 2023-02-17 株式会社Sk电子 图案修正方法以及光掩模

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100536781B1 (ko) 1997-12-25 2005-12-14 가부시키가이샤 니콘 포토마스크의 제조방법과 장치 및 디바이스의 제조방법
JP2011013382A (ja) * 2009-06-30 2011-01-20 Ulvac Seimaku Kk ハーフトーンマスクの製造方法
JP2012008545A (ja) * 2010-05-24 2012-01-12 Hoya Corp 多階調フォトマスクの製造方法、及びパターン転写方法

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JP3173314B2 (ja) * 1995-03-30 2001-06-04 凸版印刷株式会社 位相シフトマスクの製造方法
JP2917879B2 (ja) * 1995-10-31 1999-07-12 日本電気株式会社 フォトマスク及びその製造方法
JP2002151381A (ja) * 2000-11-09 2002-05-24 Nec Kagoshima Ltd パターン形成方法
JP2003121977A (ja) * 2001-10-12 2003-04-23 Hitachi Ltd 半導体集積回路装置の製造方法およびマスク
JP2007178662A (ja) * 2005-12-27 2007-07-12 Dainippon Printing Co Ltd カラーフィルタの製造方法
JP4509050B2 (ja) * 2006-03-10 2010-07-21 信越化学工業株式会社 フォトマスクブランク及びフォトマスク
JP2012008546A (ja) * 2010-05-24 2012-01-12 Hoya Corp 多階調フォトマスクの製造方法、及びパターン転写方法
JP5728223B2 (ja) * 2010-12-27 2015-06-03 アルバック成膜株式会社 ハーフトーンマスク、ハーフトーンマスクブランクス及びハーフトーンマスクの製造方法
JP5605917B2 (ja) * 2011-12-27 2014-10-15 Ｈｏｙａ株式会社 フォトマスクの製造方法、パターン転写方法及びフラットパネルディスプレイの製造方法
JP6081716B2 (ja) * 2012-05-02 2017-02-15 Hoya株式会社 フォトマスク、パターン転写方法及びフラットパネルディスプレイの製造方法
KR102004399B1 (ko) * 2012-11-05 2019-07-29 삼성디스플레이 주식회사 패턴 형성용 광 마스크
JP5668745B2 (ja) 2012-11-30 2015-02-12 大日本印刷株式会社 階調マスク
CN104718496B (zh) * 2012-12-27 2019-06-28 爱发科成膜株式会社 相移掩膜的制造方法
JP6324756B2 (ja) * 2013-03-19 2018-05-16 Hoya株式会社 位相シフトマスクブランク及びその製造方法、位相シフトマスクの製造方法、並びに表示装置の製造方法
JP6389375B2 (ja) * 2013-05-23 2018-09-12 Hoya株式会社 マスクブランクおよび転写用マスク並びにそれらの製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100536781B1 (ko) 1997-12-25 2005-12-14 가부시키가이샤 니콘 포토마스크의 제조방법과 장치 및 디바이스의 제조방법
JP2011013382A (ja) * 2009-06-30 2011-01-20 Ulvac Seimaku Kk ハーフトーンマスクの製造方法
JP2012008545A (ja) * 2010-05-24 2012-01-12 Hoya Corp 多階調フォトマスクの製造方法、及びパターン転写方法

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CN105911812B (zh) 2019-12-27
CN105911812A (zh) 2016-08-31
JP6391495B2 (ja) 2018-09-19
JP2016156857A (ja) 2016-09-01
KR20160102904A (ko) 2016-08-31
TW201704842A (zh) 2017-02-01
TWI622849B (zh) 2018-05-01

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