KR101810097B1 - 저전력 메모리 동작들을 수행하기 위한 시스템 및 방법 - Google Patents

저전력 메모리 동작들을 수행하기 위한 시스템 및 방법 Download PDF

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KR101810097B1
KR101810097B1 KR1020167018311A KR20167018311A KR101810097B1 KR 101810097 B1 KR101810097 B1 KR 101810097B1 KR 1020167018311 A KR1020167018311 A KR 1020167018311A KR 20167018311 A KR20167018311 A KR 20167018311A KR 101810097 B1 KR101810097 B1 KR 101810097B1
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South Korea
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value
mtj storage
values
storage element
write
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Korean (ko)
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KR20160098319A (ko
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지안 센
류 고 추아-오안
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퀄컴 인코포레이티드
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1675—Writing or programming circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1673—Reading or sensing circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1006—Data managing, e.g. manipulating data before writing or reading out, data bus switches or control circuits therefor
    • G11C7/1009—Data masking during input/output
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1078—Data input circuits, e.g. write amplifiers, data input buffers, data input registers, data input level conversion circuits
    • G11C7/109—Control signal input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/12—Bit line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, equalising circuits, for bit lines
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2207/00—Indexing scheme relating to arrangements for writing information into, or reading information out from, a digital store
    • G11C2207/22—Control and timing of internal memory operations
    • G11C2207/2263—Write conditionally, e.g. only if new data and old data differ

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Mram Or Spin Memory Techniques (AREA)
KR1020167018311A 2013-12-14 2014-11-26 저전력 메모리 동작들을 수행하기 위한 시스템 및 방법 Active KR101810097B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US14/106,730 US9613675B2 (en) 2013-12-14 2013-12-14 System and method to perform low power memory operations
US14/106,730 2013-12-14
PCT/US2014/067756 WO2015088790A1 (en) 2013-12-14 2014-11-26 System and method to perform low power memory operations

Publications (2)

Publication Number Publication Date
KR20160098319A KR20160098319A (ko) 2016-08-18
KR101810097B1 true KR101810097B1 (ko) 2017-12-18

Family

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KR1020167018311A Active KR101810097B1 (ko) 2013-12-14 2014-11-26 저전력 메모리 동작들을 수행하기 위한 시스템 및 방법

Country Status (6)

Country Link
US (1) US9613675B2 (enExample)
EP (1) EP3080814B1 (enExample)
JP (1) JP6162902B2 (enExample)
KR (1) KR101810097B1 (enExample)
CN (1) CN105814638B (enExample)
WO (1) WO2015088790A1 (enExample)

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US9652070B2 (en) * 2013-09-25 2017-05-16 Lenovo (Singapore) Pte. Ltd. Integrating multiple different touch based inputs
KR20150082911A (ko) * 2014-01-08 2015-07-16 삼성전자주식회사 반도체 장치 및 그 제어 방법
JP6765331B2 (ja) * 2017-03-24 2020-10-07 キオクシア株式会社 メモリシステム
US10043570B1 (en) * 2017-04-17 2018-08-07 Micron Technology, Inc. Signed element compare in memory

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US20090073756A1 (en) 2007-04-24 2009-03-19 Magic Technologies, Inc. Boosted gate voltage programming for spin-torque MRAM array
US8159864B2 (en) 2008-12-08 2012-04-17 Qualcomm Incorporated Data integrity preservation in spin transfer torque magnetoresistive random access memory

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US5557572A (en) * 1992-04-24 1996-09-17 Nippon Steel Corporation Non-volatile semiconductor memory device
US5777923A (en) 1996-06-17 1998-07-07 Aplus Integrated Circuits, Inc. Flash memory read/write controller
US5784320A (en) * 1996-09-27 1998-07-21 Intel Corporation Method and apparatus for reducing power consumption in a memory by employing a conditional write controller
TW406423B (en) 1997-08-30 2000-09-21 Hyundai Electronics Ind Flash memory device
US5886930A (en) * 1997-09-24 1999-03-23 Emc Corporation Bit interleaving in a memory which uses multi-bit DRAMs
US6052302A (en) 1999-09-27 2000-04-18 Motorola, Inc. Bit-wise conditional write method and system for an MRAM
JP3701886B2 (ja) * 2001-04-27 2005-10-05 インターナショナル・ビジネス・マシーンズ・コーポレーション 記憶回路ブロック及びアクセス方法
US6606262B2 (en) 2002-01-10 2003-08-12 Hewlett-Packard Development Company, L.P. Magnetoresistive random access memory (MRAM) with on-chip automatic determination of optimized write current method and apparatus
JP2003281899A (ja) * 2002-03-22 2003-10-03 Sony Corp 半導体記憶装置とその試験方法
US6693824B2 (en) 2002-06-28 2004-02-17 Motorola, Inc. Circuit and method of writing a toggle memory
US6798688B2 (en) * 2002-11-29 2004-09-28 International Business Machines Corp. Storage array such as a SRAM with reduced power requirements
US6909631B2 (en) 2003-10-02 2005-06-21 Freescale Semiconductor, Inc. MRAM and methods for reading the MRAM
JP2006065986A (ja) 2004-08-27 2006-03-09 Fujitsu Ltd 磁気抵抗メモリおよび磁気抵抗メモリ書き込み方法
US7853837B2 (en) * 2004-09-10 2010-12-14 Rambus Inc. Memory controller and method for operating a memory controller having an integrated bit error rate circuit
JP5181672B2 (ja) 2005-03-29 2013-04-10 日本電気株式会社 磁気ランダムアクセスメモリ
US7577017B2 (en) * 2006-01-20 2009-08-18 Industrial Technology Research Institute High-bandwidth magnetoresistive random access memory devices and methods of operation thereof
US8374025B1 (en) * 2007-02-12 2013-02-12 Avalanche Technology, Inc. Spin-transfer torque magnetic random access memory (STTMRAM) with laminated free layer
JP2010033620A (ja) * 2006-10-30 2010-02-12 Renesas Technology Corp 磁性体メモリ
KR100895387B1 (ko) * 2007-10-16 2009-04-30 주식회사 하이닉스반도체 상 변화 메모리 장치
US8274820B2 (en) 2008-02-08 2012-09-25 Fuji Electric Co., Ltd. Magnetic memory element, method of driving same, and nonvolatile storage device
KR101411499B1 (ko) * 2008-05-19 2014-07-01 삼성전자주식회사 가변 저항 메모리 장치 및 그것의 관리 방법
KR20090123244A (ko) * 2008-05-27 2009-12-02 삼성전자주식회사 상 변화 메모리 장치 및 그것의 쓰기 방법
US20090303776A1 (en) * 2008-06-05 2009-12-10 Texas Instruments Incorporated Static random access memory cell
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US7830726B2 (en) 2008-09-30 2010-11-09 Seagate Technology Llc Data storage using read-mask-write operation
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US8111544B2 (en) 2009-02-23 2012-02-07 Taiwan Semiconductor Manufacturing Company, Ltd. Programming MRAM cells using probability write
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US8437204B2 (en) * 2009-06-12 2013-05-07 Taiwan Semiconductor Manufacturing Company, Ltd. Memory array with corresponding row and column control signals
US7936585B2 (en) 2009-07-13 2011-05-03 Seagate Technology Llc Non-volatile memory cell with non-ohmic selection layer
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KR20150120557A (ko) * 2014-04-17 2015-10-28 에스케이하이닉스 주식회사 반도체 메모리를 포함하는 전자 장치 및 이의 동작 방법

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090073756A1 (en) 2007-04-24 2009-03-19 Magic Technologies, Inc. Boosted gate voltage programming for spin-torque MRAM array
US8159864B2 (en) 2008-12-08 2012-04-17 Qualcomm Incorporated Data integrity preservation in spin transfer torque magnetoresistive random access memory

Also Published As

Publication number Publication date
US20150170727A1 (en) 2015-06-18
CN105814638A (zh) 2016-07-27
JP6162902B2 (ja) 2017-07-12
US9613675B2 (en) 2017-04-04
JP2016540336A (ja) 2016-12-22
EP3080814A1 (en) 2016-10-19
KR20160098319A (ko) 2016-08-18
EP3080814B1 (en) 2020-11-18
WO2015088790A1 (en) 2015-06-18
CN105814638B (zh) 2019-07-09

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