KR101772943B1 - 극자외선용 블랭크 마스크 및 이를 이용한 포토마스크 - Google Patents

극자외선용 블랭크 마스크 및 이를 이용한 포토마스크 Download PDF

Info

Publication number
KR101772943B1
KR101772943B1 KR1020160050066A KR20160050066A KR101772943B1 KR 101772943 B1 KR101772943 B1 KR 101772943B1 KR 1020160050066 A KR1020160050066 A KR 1020160050066A KR 20160050066 A KR20160050066 A KR 20160050066A KR 101772943 B1 KR101772943 B1 KR 101772943B1
Authority
KR
South Korea
Prior art keywords
film
layer
platinum
extreme ultraviolet
light
Prior art date
Application number
KR1020160050066A
Other languages
English (en)
Korean (ko)
Other versions
KR20170021191A (ko
Inventor
남기수
신철
이종화
양철규
최민기
김창준
Original Assignee
주식회사 에스앤에스텍
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 주식회사 에스앤에스텍 filed Critical 주식회사 에스앤에스텍
Publication of KR20170021191A publication Critical patent/KR20170021191A/ko
Application granted granted Critical
Publication of KR101772943B1 publication Critical patent/KR101772943B1/ko

Links

Images

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • G03F1/58—Absorbers, e.g. of opaque materials having two or more different absorber layers, e.g. stacked multilayer absorbers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/168—Finishing the coated layer, e.g. drying, baking, soaking
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/70033—Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
KR1020160050066A 2015-08-17 2016-04-25 극자외선용 블랭크 마스크 및 이를 이용한 포토마스크 KR101772943B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020150115198 2015-08-17
KR20150115198 2015-08-17

Publications (2)

Publication Number Publication Date
KR20170021191A KR20170021191A (ko) 2017-02-27
KR101772943B1 true KR101772943B1 (ko) 2017-09-12

Family

ID=58315726

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020160050066A KR101772943B1 (ko) 2015-08-17 2016-04-25 극자외선용 블랭크 마스크 및 이를 이용한 포토마스크

Country Status (2)

Country Link
KR (1) KR101772943B1 (zh)
TW (1) TWI623805B (zh)

Families Citing this family (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI774375B (zh) 2016-07-27 2022-08-11 美商應用材料股份有限公司 具多層吸收劑的極紫外遮罩坯料及製造方法
EP3454120B1 (en) 2017-09-09 2024-05-01 IMEC vzw Method for manufacturing euv reticles and reticles for euv lithography
EP3454119B1 (en) * 2017-09-09 2023-12-27 IMEC vzw Euv absorbing alloys
TWI811369B (zh) * 2018-05-25 2023-08-11 日商Ｈｏｙａ股份有限公司 反射型光罩基底、反射型光罩、以及反射型光罩及半導體裝置之製造方法
JP2020034666A (ja) * 2018-08-29 2020-03-05 Hoya株式会社 反射型マスクブランク、反射型マスク及びその製造方法、並びに半導体装置の製造方法
US11119398B2 (en) * 2018-09-28 2021-09-14 Taiwan Semiconductor Manufacturing Co., Ltd. EUV photo masks
TW202026770A (zh) 2018-10-26 2020-07-16 美商應用材料股份有限公司 用於極紫外線掩模吸收劑的ta-cu合金材料
TWI845579B (zh) 2018-12-21 2024-06-21 美商應用材料股份有限公司 極紫外線遮罩吸收器及用於製造的方法
TWI828843B (zh) 2019-01-31 2024-01-11 美商應用材料股份有限公司 極紫外線（ｅｕｖ）遮罩素材及其製造方法
TW202035792A (zh) 2019-01-31 2020-10-01 美商應用材料股份有限公司 極紫外光遮罩吸收體材料
US11249390B2 (en) 2019-01-31 2022-02-15 Applied Materials, Inc. Extreme ultraviolet mask absorber materials
TWI836073B (zh) 2019-05-22 2024-03-21 美商應用材料股份有限公司 極紫外光遮罩坯體及其製造方法
TWI845677B (zh) 2019-05-22 2024-06-21 美商應用材料股份有限公司 極紫外光遮罩吸收材料
TW202104666A (zh) 2019-05-22 2021-02-01 美商應用材料股份有限公司 極紫外光遮罩吸收劑材料
TW202104667A (zh) 2019-05-22 2021-02-01 美商應用材料股份有限公司 極紫外光遮罩吸收材料
TWI836072B (zh) 2019-05-22 2024-03-21 美商應用材料股份有限公司 具有嵌入吸收層之極紫外光遮罩
US11385536B2 (en) 2019-08-08 2022-07-12 Applied Materials, Inc. EUV mask blanks and methods of manufacture
KR102473558B1 (ko) * 2019-10-23 2022-12-05 주식회사 에스앤에스텍 극자외선 리소그래피용 하프톤 위상반전 블랭크 마스크 및 포토마스크
KR102285099B1 (ko) * 2020-01-08 2021-08-04 주식회사 에스앤에스텍 극자외선용 반사형 블랭크 마스크 및 포토마스크
US11630385B2 (en) * 2020-01-24 2023-04-18 Applied Materials, Inc. Extreme ultraviolet mask absorber materials
TW202129401A (zh) 2020-01-27 2021-08-01 美商應用材料股份有限公司 極紫外線遮罩坯體硬遮罩材料
TWI817073B (zh) 2020-01-27 2023-10-01 美商應用材料股份有限公司 極紫外光遮罩坯體硬遮罩材料
TW202131087A (zh) 2020-01-27 2021-08-16 美商應用材料股份有限公司 極紫外光遮罩吸收劑材料
US11392036B2 (en) 2020-01-31 2022-07-19 Taiwan Semiconductor Manufacturing Co., Ltd. Photoresist and method
TW202141165A (zh) 2020-03-27 2021-11-01 美商應用材料股份有限公司 極紫外光遮罩吸收材料
TWI836207B (zh) 2020-04-17 2024-03-21 美商應用材料股份有限公司 極紫外光遮罩吸收材料
US11300871B2 (en) 2020-04-29 2022-04-12 Applied Materials, Inc. Extreme ultraviolet mask absorber materials
US11294271B2 (en) * 2020-04-30 2022-04-05 Taiwan Semiconductor Manufacturing Co., Ltd. Mask for extreme ultraviolet photolithography
TW202202641A (zh) 2020-07-13 2022-01-16 美商應用材料股份有限公司 極紫外線遮罩吸收劑材料
US11609490B2 (en) * 2020-10-06 2023-03-21 Applied Materials, Inc. Extreme ultraviolet mask absorber materials
US11513437B2 (en) * 2021-01-11 2022-11-29 Applied Materials, Inc. Extreme ultraviolet mask absorber materials
US11592738B2 (en) 2021-01-28 2023-02-28 Applied Materials, Inc. Extreme ultraviolet mask absorber materials
US20220350233A1 (en) * 2021-05-03 2022-11-03 Applied Materials, Inc. Extreme ultraviolet mask absorber materials
WO2024053634A1 (ja) * 2022-09-09 2024-03-14 Ａｇｃ株式会社 反射型マスクブランク、反射型マスク、反射型マスクブランクの製造方法、及び反射型マスクの製造方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015073013A (ja) 2013-10-03 2015-04-16 旭硝子株式会社 Ｅｕｖリソグラフィ用反射型マスクブランクの製造方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20110050427A (ko) * 2008-07-14 2011-05-13 아사히 가라스 가부시키가이샤 Ｅｕｖ 리소그래피용 반사형 마스크 블랭크 및 ｅｕｖ 리소그래피용 반사형 마스크
JPWO2014050891A1 (ja) * 2012-09-28 2016-08-22 旭硝子株式会社 Ｅｕｖリソグラフィ用反射型マスクブランクおよびその製造方法、ならびにｅｕｖリソグラフィ用反射型マスクおよびその製造方法
KR102239728B1 (ko) * 2013-08-28 2021-04-12 호야 가부시키가이샤 마스크 블랭크, 마스크 블랭크의 제조 방법 및 전사용 마스크의 제조 방법
KR101567057B1 (ko) * 2013-11-15 2015-11-09 주식회사 에스앤에스텍 극자외선용 블랭크 마스크 및 이를 이용한 포토마스크

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015073013A (ja) 2013-10-03 2015-04-16 旭硝子株式会社 Ｅｕｖリソグラフィ用反射型マスクブランクの製造方法

Also Published As

Publication number Publication date
TWI623805B (zh) 2018-05-11
KR20170021191A (ko) 2017-02-27
TW201725440A (zh) 2017-07-16

Similar Documents

Publication Publication Date Title
KR101772943B1 (ko) 극자외선용 블랭크 마스크 및 이를 이용한 포토마스크
KR101567057B1 (ko) 극자외선용 블랭크 마스크 및 이를 이용한 포토마스크
US11036127B2 (en) Reflective mask blank and reflective mask
KR101829604B1 (ko) 극자외선용 포토마스크 및 그 제조방법
KR20180127197A (ko) 극자외선용 블랭크 마스크 및 이를 이용한 포토마스크
KR20160002332A (ko) 극자외선용 블랭크 마스크 및 이를 이용한 포토마스크
JP5082857B2 (ja) Ｅｕｖリソグラフィ用反射型マスクブランク、および該マスクブランク用の導電膜付基板
TWI826587B (zh) 反射型空白光罩及反射型光罩
KR101579852B1 (ko) 극자외선용 블랭크 마스크 및 이를 이용한 포토마스크
KR20140085350A (ko) Euv 리소그래피용 반사형 마스크 블랭크 및 그 제조 방법
WO2021193089A1 (ja) 多層反射膜付き基板、反射型マスクブランク、反射型マスク、及び半導体デバイスの製造方法
KR102511751B1 (ko) 극자외선 리소그래피용 블랭크마스크 및 포토마스크
JP2006228767A (ja) 極端紫外線露光用マスク、マスクブランク、及び露光方法
KR20160016098A (ko) 극자외선용 블랭크 마스크 및 이를 이용한 포토마스크
KR20210089406A (ko) 극자외선용 반사형 블랭크 마스크 및 포토마스크
US11360377B2 (en) Half-tone attenuated phase shift blankmask and photomask for EUV lithography
KR101615890B1 (ko) 극자외선용 블랭크 마스크 및 이를 이용한 포토마스크
JP2021110952A (ja) 極紫外線用反射型ブランクマスク及びフォトマスク
WO2021106954A1 (ja) 反射型フォトマスクブランク及び反射型フォトマスク
KR102285098B1 (ko) 극자외선용 반사형 블랭크 마스크 및 그 제조방법
KR20160129789A (ko) 플랫 패널 디스플레이용 위상반전 블랭크 마스크 및 포토마스크
KR20190129661A (ko) 극자외선 리소그래피용 블랭크마스크, 포토마스크 및 이의 제조 방법
KR20210022479A (ko) 극자외선용 블랭크마스크 및 포토마스크
KR20220030048A (ko) 극자외선용 반사형 블랭크 마스크 및 그 제조방법
KR20220096701A (ko) 극자외선 리소그래피용 위상반전 블랭크마스크 및 포토마스크

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
E701 Decision to grant or registration of patent right
GRNT Written decision to grant