KR101770144B1 - Apparatus and Method for treating a substrate - Google Patents

Apparatus and Method for treating a substrate Download PDF

Info

Publication number
KR101770144B1
KR101770144B1 KR1020150146864A KR20150146864A KR101770144B1 KR 101770144 B1 KR101770144 B1 KR 101770144B1 KR 1020150146864 A KR1020150146864 A KR 1020150146864A KR 20150146864 A KR20150146864 A KR 20150146864A KR 101770144 B1 KR101770144 B1 KR 101770144B1
Authority
KR
South Korea
Prior art keywords
gas
substrate
flow path
supply unit
cup
Prior art date
Application number
KR1020150146864A
Other languages
Korean (ko)
Other versions
KR20170046472A (en
Inventor
정부영
박선용
Original Assignee
세메스 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 세메스 주식회사 filed Critical 세메스 주식회사
Priority to KR1020150146864A priority Critical patent/KR101770144B1/en
Publication of KR20170046472A publication Critical patent/KR20170046472A/en
Application granted granted Critical
Publication of KR101770144B1 publication Critical patent/KR101770144B1/en

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02046—Dry cleaning only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/67034—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/60—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation
    • H01L2021/60007—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation involving a soldering or an alloying process
    • H01L2021/60022—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation involving a soldering or an alloying process using bump connectors, e.g. for flip chip mounting
    • H01L2021/60097—Applying energy, e.g. for the soldering or alloying process
    • H01L2021/60172—Applying energy, e.g. for the soldering or alloying process using static pressure
    • H01L2021/60187—Isostatic pressure, e.g. degassing using vacuum or pressurised liquid

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

The present invention relates to an apparatus for treating a substrate and a method of treating the substrate. A substrate processing apparatus according to an embodiment of the present invention includes a support unit for supporting a substrate, a cup provided to surround the support unit and having an upper space opened therein, a pressure regulating member for providing an exhaust pressure in the cup, A first gas supply unit provided above the inner space and configured to supply a first gas to the inner space by forming a downward flow, and a second gas supply unit provided above the inner space, A second gas supply unit provided at an opposed position for supplying a second gas to an upper region of the substrate, and a controller for controlling the elevation driver, the pressure regulating member, and the second gas supply unit, A second cup connected to the first inlet and a second cup connected to the second inlet positioned above the first inlet, The valve includes a second cup and the pressure regulating member includes a first pressure member for providing an exhaust pressure inside the first flow path and a second pressure member for providing an exhaust pressure inside the second flow path, And the substrate processing apparatus for controlling the pressure regulating member so that the exhaust pressure supplied to the second flow path while the second gas is supplied from the second gas supply unit is larger than the exhaust pressure provided to the first flow path.

Figure R1020150146864

Description

[0001] DESCRIPTION [0002] APPARATUS AND METHOD FOR TREATING A SUBSTRATE [0003]

The present invention relates to an apparatus for treating a substrate and a method of treating the substrate.

In order to manufacture semiconductor devices or liquid crystal displays, various processes such as photolithography, etching, ashing, ion implantation, and thin film deposition are performed on the substrate. Before or after such a process, a cleaning process is performed to clean the substrate to remove contaminants and particles generated in each process.

In general, the cleaning process performs a chemical treatment step, a rinsing treatment step, and a drying treatment step. Each processing step proceeds in the inner space of the housing, and a downward flow is formed in the inner space during the process. The downward draft is generally provided by an airflow supply with a fan and a filter.

However, when the downward flow is directly supplied to the substrate during the cleaning process, the cleaning process of the substrate may be influenced by the downward flow. Thus, depending on the process, the upper region of the substrate may be covered with a specific gas such as an inert gas or dry air in order to block the contact of the outside air to the upper portion of the substrate.

The present invention provides a substrate processing apparatus and a substrate processing method capable of improving the efficiency of a process of cleaning a substrate.

Another object of the present invention is to provide a substrate processing apparatus and a substrate processing method for supplying a gas other than external air to an upper region of a substrate during a cleaning process of the substrate.

The present invention is not limited thereto, and other objects not mentioned may be clearly understood by those skilled in the art from the following description.

The present invention provides an apparatus for processing a substrate.

According to an embodiment of the present invention, the substrate processing apparatus includes a support unit for supporting a substrate, a cup provided to surround the support unit and having an upper space opened therein, and a pressure regulating member A first gas supply unit provided above the inner space and configured to supply a first gas to the inner space by forming a downward flow, A second gas supply unit for supplying a second gas to an upper region of the substrate, and a controller for controlling the elevation driver, the pressure regulating member, and the second gas supply unit, The cup is connected to a first cup having a first flow path connected to the first inlet and a second inlet positioned above the first inlet Wherein the pressure regulating member includes a first pressure member for providing an exhaust pressure inside the first flow path and a second pressure member for providing an exhaust pressure inside the second flow path, The controller may control the pressure regulating member such that the exhaust pressure provided to the second flow path while the second gas is supplied from the second gas supply unit is larger than the exhaust pressure provided to the first flow path.

According to one embodiment, the second gas supply unit includes a body having a bottom surface smaller than the substrate supported by the support unit, and the body is provided with a second gas supply unit A discharge port may be provided.

According to one embodiment, the discharge port may have a ring shape.

According to one embodiment, a plurality of the ejection openings are provided, and the plurality of ejection openings can be combined with each other to form a ring shape.

According to one embodiment, the substrate may be positioned at a height opposite to the first inlet while the second gas is being supplied.

According to one embodiment, the second gas supply unit may be located below the first gas supply unit during the process of processing the substrate.

According to one embodiment, the controller is configured such that the first gas is exhausted through the second flow path, and at least 50% of the supply amount of the second gas is exhausted through the first flow path while the second gas is supplied And the exhaust pressure provided to the first flow path and the second flow path can be controlled.

According to one embodiment, the first gas is air, and is supplied to the inner space by a fan filter unit, and the second gas may be provided as inert gas or clean dry air (CDA).

According to an embodiment, the second gas supply unit may further include a support coupled to an upper portion of the body and provided to be movable up and down.

According to one embodiment, the support may be provided in a telescopic configuration.

According to an embodiment, the second gas supply unit may further include a body arm coupled to the body, and swingably movable between an inner upper region of the support unit and an outer upper region of the support unit.

According to one embodiment, the substrate processing apparatus further includes a processing liquid supply unit for supplying the processing liquid to the substrate, wherein the processing liquid supply unit includes a nozzle, a nozzle support connected to the nozzle and the nozzle support, And the body may be provided to surround the nozzle.

The present invention provides a method of treating a substrate.

According to an embodiment of the present invention, the substrate processing method includes supplying a first gas to form a down stream in a process space for processing the substrate, supplying a second gas to an upper area of the substrate, Wherein the processing space is exhausted through a second flow path having a first flow path having a first inlet and a second inlet positioned higher than the first inlet, The exhaust pressure provided to the two flow paths may be provided to be larger than the exhaust pressure provided to the first flow path.

According to one embodiment, the first gas may be provided by a fan filter unit and the second gas may be provided by a second gas supply unit.

According to one embodiment, the fan filter unit may be located above the second gas supply unit during the process of processing the substrate.

According to one embodiment, the second gas may be fed downwardly in a direction away from the center of the substrate.

According to one embodiment, the first inlet may be located at the same height as the substrate when exhausting the processing space.

According to one embodiment, the first gas may be exhausted through the second flow path without flowing into the region on the substrate by the flow of the second gas.

According to an embodiment, more than 50% of the supply amount of the second gas may be exhausted through the first flow path while the second gas is supplied.

According to one embodiment, the first gas may be provided as air.

According to one embodiment, the second gas may be provided as an inert gas or clean dry air (CDA).

According to one embodiment, the second gas may be supplied during the organic solvent drying process after supplying the organic solvent to the substrate.

According to an embodiment of the present invention, the efficiency of the substrate cleaning process can be improved by supplying the first gas and the second gas during the process of processing the substrate.

According to an embodiment of the present invention, the second gas may be supplied during the substrate processing process to minimize the influence of the first gas on the substrate.

The effects of the present invention are not limited to the above-mentioned effects, and the effects not mentioned can be clearly understood by those skilled in the art from the present specification and attached drawings.

1 is a plan view showing a substrate processing apparatus provided with a substrate processing apparatus according to an embodiment of the present invention.
2 is a cross-sectional view showing an embodiment of a substrate processing apparatus provided in the process chamber of FIG.
3 is a perspective view showing the second gas supply unit of Fig.
Fig. 4 is a perspective view showing another embodiment of the second gas supply unit of Fig. 2; Fig.
FIGS. 5 and 6 are cross-sectional views showing another embodiment of the substrate processing apparatus provided with the process chamber of FIG.
7 is a cross-sectional view showing the second gas supply unit of Fig.
FIG. 8 is a schematic view showing the flow of airflow to the substrate processing apparatus of FIG. 2; FIG.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. The embodiments of the present invention can be modified in various forms, and the scope of the present invention should not be construed as being limited to the following embodiments. This embodiment is provided to more fully describe the present invention to those skilled in the art. Thus, the shape of the elements in the figures has been exaggerated to emphasize a clearer description.

1 is a plan view showing a substrate processing apparatus provided with a substrate processing apparatus according to an embodiment of the present invention. 1, the substrate processing apparatus 1 includes an index module 10 and a processing module 20, and the index module 10 includes a load port 120 and a transfer frame 140. [ The load port 120, the transfer frame 140, and the process module 20 are sequentially arranged in a line. Hereinafter, the direction in which the load port 120, the transfer frame 140, and the process module 20 are arranged is referred to as a first direction 12. A direction perpendicular to the first direction 12 is referred to as a second direction 14 and a direction perpendicular to the plane including the first direction 12 and the second direction 14 is referred to as a third direction (16).

The carrier 130 in which the substrate W is accommodated is seated in the load port 140. A plurality of load ports 120 are provided, and they are arranged in a line along the second direction 14. In FIG. 1, four load ports 120 are shown. However, the number of load ports 120 may increase or decrease depending on conditions such as process efficiency and footprint of the process module 20. A carrier (130) is provided with a slot (not shown) provided to support the edge of the substrate (W). The slots are provided in a plurality of third directions 16 and the substrates W are positioned in the carrier 130 so as to be stacked apart from each other along the third direction 16. As the carrier 130, a front opening unified pod (FOUP) may be used.

Process processing module 20 includes a buffer unit 220, a transfer chamber 240, and a process chamber 260. The transfer chamber 240 is disposed such that its longitudinal direction is parallel to the first direction 12. Process chambers 260 are disposed on one side and the other side of the transfer chamber 240 along the second direction 14, respectively. The process chambers 260 located at one side of the transfer chamber 240 and the process chambers 260 located at the other side of the transfer chamber 240 are provided to be symmetrical with respect to the transfer chamber 240. Some of the process chambers 260 are disposed along the longitudinal direction of the transfer chamber 240. In addition, some of the process chambers 260 are stacked together. That is, at one side of the transfer chamber 240, the process chambers 260 may be arranged in an array of A X B (where A and B are each at least one natural number). Where A is the number of process chambers 260 provided in a row along the first direction 12 and B is the number of process chambers 260 provided in a row along the third direction 16. When four or six process chambers 260 are provided on one side of the transfer chamber 240, the process chambers 260 may be arranged in an array of 2 X 2 or 3 X 2. The number of process chambers 260 may increase or decrease. Unlike the above, the process chamber 260 may be provided only on one side of the transfer chamber 240. Also, unlike the above, the process chamber 260 may be provided as a single layer on one side and on both sides of the transfer chamber 240.

The buffer unit 220 is disposed between the transfer frame 140 and the transfer chamber 240. The buffer unit 220 provides a space for the substrate W to stay before the transfer of the substrate W between the transfer chamber 240 and the transfer frame 140. [ The buffer unit 220 is provided with a slot (not shown) in which the substrate W is placed, and a plurality of slots (not shown) are provided to be spaced apart from each other in the third direction 16. The surface of the buffer unit 220 opposed to the transfer frame 140 and the surface of the transfer chamber 240 facing each other are opened.

The transfer frame 140 transfers the substrate W between the buffer unit 220 and the carrier 130 that is seated on the load port 120. The transfer frame 140 is provided with an index rail 142 and an index robot 144. The index rail 142 is provided so that its longitudinal direction is parallel to the second direction 14. The index robot 144 is installed on the index rail 142 and is linearly moved along the index rail 142 in the second direction 14. The index robot 144 includes a base 144a, a body 144b, and an index arm 144c. The base 144a is installed so as to be movable along the index rail 142. The body 144b is coupled to the base 144a. The body 144b is provided to be movable along the third direction 16 on the base 144a. Also, the body 144b is provided to be rotatable on the base 144a. The index arm 144c is coupled to the body 144b and is provided to be movable forward and backward relative to the body 144b. A plurality of index arms 144c are provided and each is provided to be individually driven. The index arms 144c are stacked in a state of being spaced from each other along the third direction 16. Some of the index arms 144c are used to transfer the substrate W from the processing module 20 to the carrier 130 while the other part is used to transfer the substrate W from the carrier 130 to the processing module 20. [ As shown in Fig. This can prevent the particles generated from the substrate W before the process processing from adhering to the substrate W after the process processing in the process of loading and unloading the substrate W by the index robot 144. [

The transfer chamber 240 transfers the substrate W between the buffer unit 220 and the process chamber 260 and between the process chambers 260. The transfer chamber 240 is provided with a guide rail 242 and a main robot 244. The guide rails 242 are arranged so that their longitudinal directions are parallel to the first direction 12. The main robot 244 is installed on the guide rails 242 and is linearly moved along the first direction 12 on the guide rails 242. The main robot 244 includes a base 244a, a body 244b, and a main arm 244c. The base 244a is installed so as to be movable along the guide rail 242. The body 244b is coupled to the base 244a. The body 244b is provided to be movable along the third direction 16 on the base 244a. Body 244b is also provided to be rotatable on base 244a. The main arm 244c is coupled to the body 244b, which is provided for forward and backward movement relative to the body 244b. A plurality of main arms 244c are provided and each is provided to be individually driven. The main arms 244c are stacked in a state of being spaced from each other along the third direction 16. A main arm 244c used when the substrate W is transferred from the buffer unit 220 to the process chamber 260 and a main arm 244b used when the substrate W is transferred from the process chamber 260 to the buffer unit 220 The main arms 244c may be different from each other.

In the process chamber 260, a substrate processing apparatus 300 for performing a cleaning process on the substrate W is provided. The substrate processing apparatus 300 provided in each process chamber 260 may have a different structure depending on the type of the cleaning process to be performed. Alternatively, the substrate processing apparatus 300 in each process chamber 260 may have the same structure. Optionally, the process chambers 260 are divided into a plurality of groups, and the substrate processing apparatuses 300 provided in the process chambers 260 belonging to the same group have the same structure and are provided in the process chambers 260 belonging to different groups The substrate processing apparatuses 300 may have different structures from each other. For example, if the process chambers 260 are divided into two groups, a first group of process chambers 260 is provided on one side of the transfer chamber 240 and a second group of process chambers 260 are provided on the other side of the transfer chamber 240 Process chambers 260 may be provided. Optionally, a first group of process chambers 260 may be provided on the lower layer and a second group of process chambers 260 may be provided on the upper and lower sides of the transfer chamber 240, respectively. The first group of process chambers 260 and the second group of process chambers 260 may be classified according to the type of the chemical used and the type of the cleaning method.

An example of the substrate processing apparatus 300 for cleaning the substrate W by using the process liquid will be described below. 2 is a cross-sectional view showing an embodiment of a substrate processing apparatus provided in the process chamber of FIG. 2, the substrate processing apparatus 300 includes a housing 310, a cup 320, a support unit 330, an elevation unit 340, a process liquid supply unit 350, a first gas supply unit 360 , A second gas supply unit 370, a pressure regulating member 380, and a controller 390.

 The cup 320 provides a space in which the substrate W processing process is performed, and the upper portion thereof is opened. The cup 320 includes a first cup 322, a second cup 324, and a third cup 326. Each of the cups 322, 324, and 326 recovers the different process liquids among the process liquids used in the process. The first cup 322 is provided in the form of an annular ring surrounding the support unit 330. The second cup 324 is provided in an annular ring shape surrounding the first cup 322. The third cup 326 is provided in an annular ring shape surrounding the second cup 324.

Each of the cups 322, 324, and 326 has an inlet port and a flow path through which the process liquid, the first gas, and the second gas can flow.

The first cup 322 has a first inlet 322a and a first flow path 322b. The first inlet 322a receives the process liquid, the first gas, and the second gas. The first gas or the second gas supplied from the first gas supply unit 360 or the second gas supply unit 370 may pass through the first inlet 322a.

The first flow path 322b is formed in the interior of the first cup 322. The first flow path 322b is positioned so as to surround the support unit 330. The treatment liquid, the first gas, and the second gas can pass through the first flow path 322b. The first inlet 322a is located at a height opposite to the substrate W while the second gas is being supplied from the second gas supply unit 370. [

A first liquid, a first gas, and a second gas are introduced into the second cup 324. The second inlet 324a is located at the top of the first inlet 322a. The first gas supply unit 360 or the first gas supplied from the second gas supply unit 370 or the second gas may pass through the second inlet port 324a.

The second flow path 324b is formed inside the second cup 324. The second flow path 324b is positioned to surround the first flow path 322b. The treatment liquid, the first gas, and the second gas can pass through the second flow path 324b.

The third cup 326 has a third inlet 326a and a third outlet 326b. The third inlet 326a is located above the second inlet 324a. The first or second gas supplied from the first gas supply unit 360 or the second gas supply unit 370 may pass through the third inlet port 326a. And the third flow path 326b is formed inside the third cup 326. [ And the third flow path 326b is positioned to surround the second flow path 324b. The treatment liquid, the first gas, and the second gas can pass through the third flow path 326b.

Each of the cups 322, 324, 326 is connected to a collection line 322c, 324c, 326c extending vertically downwardly of the bottom thereof. Each of the recovery lines 322c, 324c, and 326c discharges the processing liquid that has flowed through the respective cups 322, 324, and 326. [ The discharged treatment liquid can be reused through an external treatment liquid recovery system (not shown).

The respective cups 322, 324 and 326 are formed with exhaust lines 322d, 324d and 326d through which the first gas or the second gas is discharged via the respective flow paths 322a, 324a and 326a. The exhaust lines 322d, 324d, and 326d decompress the processing space by a pressure regulating member 380, which will be described later, to discharge the airflow to the outside.

The support unit 330 is disposed inside the cup 320. The support unit 330 supports the substrate W and rotates the substrate W during the process. The support unit 330 includes a body 332, a support pin 334, a chuck pin 336, and a support shaft 338. The body 332 has an upper surface that is generally circular when viewed from the top. A support shaft 338 rotatable by a motor 339 is fixedly coupled to the bottom surface of the body 332. A plurality of support pins 334 are provided. The support pin 334 is spaced apart from the edge of the upper surface of the body 332 by a predetermined distance and protrudes upward from the body 332. [ The support pins 334 are arranged so as to have a generally annular ring shape in combination with each other. The support pin 334 supports the rear edge of the substrate W so that the substrate W is spaced apart from the upper surface of the body 332 by a predetermined distance. A plurality of chuck pins 336 are provided. The chuck pin 336 is disposed farther away from the center of the body 332 than the support pin 334. The chuck pin 336 is provided to protrude upward from the body 332. The chuck pin 336 supports the side of the substrate W so that the substrate W is not laterally displaced in place when the support unit 330 is rotated. The chuck pin 336 is provided so as to be linearly movable between a standby position and a supporting position along the radial direction of the body 332. The standby position is a position far from the center of the body 332 as compared to the support position. The chuck pin 336 is positioned in the standby position when the substrate W is loaded or unloaded to the support unit 330 and the chuck pin 336 is positioned in the support position when the substrate W is being processed . At the support position, the chuck pin 336 contacts the side of the substrate W. [

The elevating unit 340 linearly moves the cup 320 in the vertical direction. As the cup 320 is moved up and down, the relative height of the cup 320 to the support unit 330 is changed. The lifting unit 340 has a bracket 342, a moving shaft 344, and a lifting driver 346. The bracket 342 is fixed to the outer wall of the cup 320 and the moving shaft 344 which is moved up and down by the elevating actuator 346 is fixedly coupled to the bracket 342. The elevation driver 346 can raise and lower the cup 320 so that the relative height of the cup 320 and the support unit 330 can be adjusted.

The cup 320 is lowered so that the support unit 330 protrudes to the upper portion of the cup 320 when the substrate W is placed on the support unit 330 or is lifted from the support unit 330. When the process is performed, the height of the cup 320 is adjusted so that the process liquid may flow into the predetermined cup 320 depending on the type of the process liquid supplied to the substrate W. For example, the substrate W is positioned at a height corresponding to the first inlet 322a of the first cup 322 while processing the substrate W with the first processing liquid. The substrate W may be positioned at a height corresponding to the second inlet 324a or the third inlet 326a while the substrate W is being processed with the second processing solution and the third processing solution. The elevation unit 340 can move the support unit 330 in the vertical direction instead of the cup 320. [

The process liquid supply unit 350 supplies the process liquid to the substrate W during the process of the substrate W process. The treatment liquid supply unit 350 includes a nozzle support 352, a nozzle 354, a support shaft 356, and a nozzle driver 358. The support shaft 356 is provided in its longitudinal direction along the third direction 16 and the nozzle driver 358 is coupled to the lower end of the support shaft 356. The nozzle driver 358 rotates and lifts the support shaft 356. The nozzle supports 375 and 372 are vertically coupled to opposite ends of the support shaft 356 coupled with the nozzle driver 358. The nozzle 354 is installed at the bottom end of the nozzle support 352. The nozzle 354 is moved by the nozzle driver 358 to the process position and the standby position. The process position is that the nozzle 354 is located at the vertically upper portion of the cup 320 and the standby position is the position at which the nozzle 354 is away from the vertical upper portion of the cup 320. One or a plurality of processing liquid supply units 350 may be provided. When a plurality of processing liquid supply units 350 are provided, the chemical, rinsing liquid, or organic solvent may be provided through processing liquid supply units 350 that are different from each other. The rinsing liquid may be pure, and the organic solvent may be a mixture of an isopropyl alcohol vapor and an inert gas or an isopropyl alcohol liquid.

The first gas supply unit 360 supplies a first gas that forms a downward flow inside the housing 310. The first gas supply unit 360 is located above the housing 310. For example, the first gas supply unit 360 may be provided as a fan filter unit in which a fan and a filter are combined. The first gas supplied to the interior of the housing 310 may be air. When the first gas is supplied to the air, a filter may be connected to a supply pipe (not shown) to purify and supply the air of the outside air.

3 is a perspective view showing the second gas supply unit of Fig. 2 and 3, the second gas supply unit 370 supplies the second gas to the upper region of the substrate W. [ The second gas supply unit 370 is vertically opposed to the support unit 330. For example, the second gas supply unit 370 may be installed on the upper wall of the housing 310. The second gas supply unit 370 is located below the first gas supply unit 360 while the process of processing the substrate W is in progress.

For example, the second gas is supplied as an inert gas or clean dry air (CDA). The inert gas includes a nitrogen gas, an argon gas, and a helium gas. Clean dry air can be provided with low-humidity gas.

The second gas supply unit 370 includes a body 371 and a support 375. The body 371 may be provided in a truncated cone shape. The body 371 is located in the upper region of the substrate W. The body 371 provides space for allowing the second gas to pass therethrough. A discharge port 373 is formed in the body 371. The discharge port 373 is formed on the outer surface of the body 371 to discharge the second gas in a direction toward the outside of the edge region of the substrate W. [ The discharge port 373 may be provided in a ring shape. Alternatively, as shown in FIG. 4, the discharge port 373 may be provided in a circular shape on the outer surface of the body 371. A plurality of discharge ports 373 may be provided, and may be arranged to form a ring shape in combination with each other.

 The support table 375 is fixed to the upper wall of the housing 310. A body 371 is coupled to a lower portion of the support table 375. The support 375 may be provided so as to be movable up and down. As an example, the support 375 may be provided in a telescopic configuration.

5 is a cross-sectional view showing another embodiment of the substrate processing apparatus provided in the process chamber of Figs. 5 and 2. Fig. Referring to FIG. 5, the second gas supply unit 370a includes a body 371a, a body arm 372a, and a body driver 375a.

The body 371a and the discharge port 373a of the second gas supply unit 370a are provided substantially the same as the body 371 and the discharge port 373 of the second gas supply unit 370 in Fig.

The body 371a is provided at the bottom end of the body arm 372a. The body arm 372a is swingable by the body driver 375a. The body driver 375a may move the body 371 vertically above the cup 320 or outside the cup 320 according to the process.

Fig. 6 is a cross-sectional view showing another embodiment of the substrate processing apparatus provided in the process chamber of Fig. 2, and Fig. 7 is a cross-sectional view showing the second gas supply unit of Fig. Referring to FIGS. 6 and 7, the second gas supply unit 370b may be provided in combination with the nozzle support 375. FIG. The second gas supply unit 370b has a body 371b and a discharge port 373b. The body 371 is coupled to the bottom end surface of the nozzle support 352. A nozzle 354 is provided in the inner space of the body 371b. The nozzle 354 is located in the central region of the inner space of the body 371b. A discharge port 373b is formed in the body 371b. The discharge port 373b is positioned so as to surround the nozzle 354. The body 371b is swingable by the nozzle driver 358 to the upper center of the cup 320 or to the outside of the cup 320. [

Referring again to FIG. 2, the pressure regulating member 380 provides an exhaust pressure within the cup 320. The pressure regulating member 380 includes a first pressure member 381, a second pressure member 383, and a third pressure member 385.

The first pressure member 381 provides an exhaust pressure in the first cup 322. The first pressure member 381 provides an exhaust pressure inside the first flow path 322b to discharge the first gas or the second gas to the outside. The first pressure member 381 is connected to the first exhaust line 322d. A first valve 322e is provided in the first exhaust line 322d. The first valve 322e may be opened to provide an exhaust pressure to the first cup 322. For example, the first pressure member 381 may be provided as a pump.

The second pressure member 383 provides an exhaust pressure in the second cup 324. The second pressure member 383 provides an exhaust pressure inside the second flow path 324b to discharge the first gas or the second gas to the outside. And the second pressure member 383 is connected to the second exhaust line 324d. A second valve 324e is provided in the second exhaust line 324d. The second valve 324e may be opened to provide an exhaust pressure to the second cup 324. For example, the second pressure member 383 may be provided as a pump.

The third pressure member 385 provides an exhaust pressure in the third cup 326. The third pressure member 385 provides an exhaust pressure inside the third flow path 326b to discharge the first gas or the second gas to the outside. And the third pressure member 385 is connected to the third exhaust line 326d. A third valve 326e is provided in the third exhaust line 326d. The third valve 326e may be opened to provide an exhaust pressure to the third cup 326. For example, the third pressure member 385 may be provided as a pump.

The controller 390 controls the elevation driver 346, the pressure regulating member 380 and the second gas supply unit 370. The controller 390 moves the cup by controlling the elevation driver so that the first inlet 322a faces the substrate W while the first gas and the second gas are supplied. The controller 390 controls the pressure regulating member 390 such that the exhaust pressure provided to the second flow path 324b during the supply of the second gas from the second gas supply unit 370 is higher than the exhaust pressure provided to the first flow path 322b, (380).

The controller 390 controls the first flow path 322b such that the first gas is exhausted through the second flow path 324b and the supply amount of the second gas is 50% or more while the second gas is supplied through the first flow path 322b 322b and the second flow path 324b. The controller 390 controls the exhaust pressure so that most of the first gas is discharged through the second flow path 324b.

Hereinafter, a substrate processing method according to an embodiment of the present invention will be described.

FIG. 8 is a schematic view showing the flow of airflow to the substrate processing apparatus of FIG. 2; FIG. Referring to Fig. 8, the substrate W placed on the support unit 330 is processed by receiving the treatment liquid from the treatment liquid supply unit. The process of processing the substrate W may be a cleaning process. A first gas is supplied to form a downward air flow in the processing space for processing the substrate W while the substrate W is being processed. At the same time, the second gas is supplied in an upper region of the substrate W. The second gas may be supplied when the organic solvent is supplied to the substrate W and then the organic solvent is dried.

The first gas and the second gas flow into the first cup 322 or the second cup 324 through the first inlet 322a or the second inlet 324a. The first gas or the second gas flowing into the first cup 322 or the second cup 324 is discharged to the outside through the first flow path 322b or the second flow path 324b. The first inlet 322a is located at the same height as the substrate W when the processing space is evacuated.

The second gas is fed downwardly in a direction away from the center of the substrate (W). The second gas is supplied in the upper region of the substrate W and fed toward the edge of the substrate W. [ And a curtain layer made of the second gas is formed on the substrate W by the supply of the second gas. The curtain layer formed through the second gas minimizes the influence on the downward flow formed through the first gas so that the drying process of the substrate W can proceed.

In this process, the pressure regulating member 380 provides the exhaust pressure provided in the second flow path 324b to be higher than the exhaust pressure provided in the first flow path 322b. The first gas exits to the outside through the curtain layer formed of the second gas and the second flow path 324b at the exhaust pressure to the second flow path 324b. The second gas is exhausted through the first flow path 322b by 50% or more of the supply amount of the second gas while the second gas is supplied.

Thus, the first gas does not flow into the region on the substrate W, and does not affect the top of the substrate W, so that foreign substances such as reactive dispersions in the remaining space escape to the outside. In addition, the flow of the first gas allows the second gas to stably form the curtain layer.

The second gas is supplied to the upper region of the substrate W to form a curtain layer on the substrate W to minimize the influence of the first gas forming the downward flow in the processing space, The efficiency of the treatment process can be improved.

In the above example, the first gas and the second gas are exhausted through the first flow path 322b and the second flow path 324b. Alternatively, the second flow path 324b and the third flow path 326b may be alternately arranged, Lt; / RTI > Alternatively, the first gas and the second gas may be exhausted through the first flow path 322b, the second flow path 324b, and the third flow path 326b.

The foregoing detailed description is illustrative of the present invention. In addition, the foregoing is intended to illustrate and explain the preferred embodiments of the present invention, and the present invention may be used in various other combinations, modifications, and environments. That is, it is possible to make changes or modifications within the scope of the concept of the invention disclosed in this specification, within the scope of the disclosure, and / or within the skill and knowledge of the art. The embodiments described herein are intended to illustrate the best mode for implementing the technical idea of the present invention and various modifications required for specific applications and uses of the present invention are also possible. Accordingly, the detailed description of the invention is not intended to limit the invention to the disclosed embodiments. It is also to be understood that the appended claims are intended to cover such other embodiments.

320: cup 330: support unit
340: lift unit 350: process liquid supply unit
360: first gas supply unit 370: second gas supply unit
380: pressure regulating member 390: controller

Claims (22)

An apparatus for processing a substrate,
A support unit for supporting the substrate;
A cup provided to surround the support unit and having an inner space with an open top;
A pressure regulating member for providing an exhaust pressure in the cup;
A lifting actuator for adjusting a relative height of the support unit and the cup;
A first gas supply unit provided above the inner space and supplying a first gas to the inner space by forming a down stream;
A second gas supply unit provided at a position opposed to and vertically opposite to the support unit, for supplying a second gas to an upper region of the substrate; And
And a controller for controlling the elevation driver, the pressure regulating member, and the second gas supply unit,
The cup,
A first cup having a first flow path connected to a first inlet;
And a second cup having a second flow path connected to a second inlet located above the first inlet,
The pressure regulating member
A first pressure member for providing an exhaust pressure inside the first flow path;
And a second pressure member for providing an exhaust pressure inside the second flow path,
Wherein the controller controls the pressure regulating member so that the exhaust pressure provided to the second flow path while the second gas is supplied from the second gas supply unit is greater than the exhaust pressure provided to the first flow path, .
The method according to claim 1,
Wherein the second gas supply unit includes a body having a bottom surface smaller than the substrate supported by the support unit,
Wherein the body is provided with a discharge port for discharging the second gas in a direction toward the outside of the edge region.
3. The method of claim 2,
Wherein the discharge port has a ring shape.
3. The method of claim 2,
Wherein a plurality of the ejection openings are provided, and the plurality of ejection openings are combined with each other to form a ring shape. The method according to claim 1,
Wherein the substrate is positioned at a height opposite to the first inlet while the second gas is being supplied.
The method according to claim 1,
Wherein the second gas supply unit is located below the first gas supply unit during the process of processing the substrate.
The method according to claim 1,
Wherein the first gas is exhausted through the second flow path and the first flow path and the second flow path are configured such that at least 50% of the supply amount of the second gas is exhausted through the first flow path while the second gas is supplied, And controls the exhaust pressure to be supplied to the second flow path.
8. The method according to any one of claims 1 to 7,
Wherein the first gas is air and is supplied to the inner space by a fan filter unit,
Wherein the second gas is provided as an inert gas or clean dry air (CDA).
3. The method of claim 2,
The second gas supply unit
Further comprising a support coupled to an upper portion of the body and provided to be movable up and down.
10. The method of claim 9,
Wherein the support is provided in a telescopic structure.
3. The method of claim 2,
The second gas supply unit
And a body arm coupled to the body, the body arm swingably movable between an inner upper region of the support unit and an outer upper region of the support unit.
3. The method of claim 2,
The substrate processing apparatus further includes a processing liquid supply unit for supplying the processing liquid to the substrate,
Wherein the processing liquid supply unit includes:
Nozzle and
A nozzle support connected to the nozzle,
And a nozzle driver for swinging the nozzle support,
Wherein the body is provided to surround the nozzle.
A method of processing a substrate,
Supplying a first gas to form a down stream in a processing space for processing the substrate, supplying a second gas to an upper region of the substrate,
The processing space is exhausted through a second flow path having a first flow path having a first inlet and a second inlet positioned higher than the first inlet,
Wherein an exhaust pressure provided to the second flow path during the supply of the second gas is provided to be larger than an exhaust pressure provided to the first flow path.
14. The method of claim 13,
Said first gas being provided by a fan filter unit,
Wherein the second gas is provided by a second gas supply unit.
15. The method of claim 14,
Wherein the fan filter unit is positioned above the second gas supply unit during a process of processing the substrate.
14. The method of claim 13,
Wherein the second gas is fed downwardly in a direction away from the center of the substrate.
14. The method of claim 13,
Wherein the first inlet is located at the same height as the substrate when the processing space is evacuated.
14. The method of claim 13,
Wherein the first gas is exhausted through the second flow path without flowing into the region on the substrate by the flow of the second gas.
19. The method of claim 18,
Wherein at least 50% of the supply amount of the second gas is exhausted through the first flow path while the second gas is supplied.
20. The method according to any one of claims 13 to 19,
Wherein the first gas is provided as air.
20. The method according to any one of claims 13 to 19,
Wherein the second gas is provided as an inert gas or clean dry air (CDA).
20. The method according to any one of claims 13 to 19,
Wherein the second gas is supplied during the organic solvent drying process after supplying the organic solvent to the substrate.

KR1020150146864A 2015-10-21 2015-10-21 Apparatus and Method for treating a substrate KR101770144B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020150146864A KR101770144B1 (en) 2015-10-21 2015-10-21 Apparatus and Method for treating a substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020150146864A KR101770144B1 (en) 2015-10-21 2015-10-21 Apparatus and Method for treating a substrate

Publications (2)

Publication Number Publication Date
KR20170046472A KR20170046472A (en) 2017-05-02
KR101770144B1 true KR101770144B1 (en) 2017-08-22

Family

ID=58742463

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020150146864A KR101770144B1 (en) 2015-10-21 2015-10-21 Apparatus and Method for treating a substrate

Country Status (1)

Country Link
KR (1) KR101770144B1 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102546756B1 (en) * 2018-05-25 2023-06-23 세메스 주식회사 Apparatus and method for treating substrate

Also Published As

Publication number Publication date
KR20170046472A (en) 2017-05-02

Similar Documents

Publication Publication Date Title
KR101621482B1 (en) Apparatus and Method for treating substrate
KR20170133694A (en) Unit for supplying fluid, Apparatus and Method for treating substrate with the unit
KR20170137245A (en) Apparatus and Method for treating substrate
KR101987959B1 (en) Apparatus and Method for treating substrate
JP7337037B2 (en) Substrate processing equipment
KR20170137239A (en) Apparatus and Method for treating substrate
KR20120023296A (en) Apparatus for treating a substrate
KR101770144B1 (en) Apparatus and Method for treating a substrate
KR102265121B1 (en) Apparatus and method for treating a subtrate
KR101817211B1 (en) Apparatus and method for treating substrate
KR101522896B1 (en) Apparatus and Method for treating substrate
KR101979602B1 (en) Apparatus and method for treating substrate
KR101981954B1 (en) Appratus for treating substrate
KR20170046490A (en) Apparatus and method for treating Substrate
KR101885565B1 (en) Apparatus and method for treating substrate
KR102178870B1 (en) Method and Apparatus for treating substrate
US20240186155A1 (en) Substrate processing apparatus and substrate processing method
KR102392488B1 (en) Apparatus and method for treating a substrate
KR102180009B1 (en) Apparatus and Method for treating substrate
KR102623921B1 (en) Substrate processing apparatus and substrate processing method
KR20160005462A (en) Apparatus and method for treating a subtrate
KR20170137247A (en) Apparatus for treating substrate
KR102186069B1 (en) Apparatus and Method for treating substrate
KR102497794B1 (en) Apparatus for treating substrate, and Method for cleaning cup
KR101570161B1 (en) Apparatus for treating substrate

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
E701 Decision to grant or registration of patent right
GRNT Written decision to grant