KR102546756B1 - Apparatus and method for treating substrate - Google Patents

Abstract

The present invention provides an apparatus for processing a substrate. According to one embodiment, a substrate processing apparatus includes a process chamber providing a process atmosphere; a substrate support unit provided in the inner space of the process chamber and on which a substrate is placed; a processing container having an open top and providing a process space for processing a substrate; a nozzle unit supplying a chemical onto a substrate seated on the substrate support member, wherein the nozzle unit includes: a first nozzle provided at a center of the nozzle unit and spraying a first chemical onto the substrate; A second nozzle is provided around the first nozzle and sprays a second chemical, the second nozzle includes a plate having a plurality of spray holes, and the second chemical is sprayed from an upper portion of the plate. It passes through the injection hole and is supplied onto the substrate.

Description

Substrate processing apparatus and method {APPARATUS AND METHOD FOR TREATING SUBSTRATE}

The present invention relates to a substrate processing apparatus and method.

In general, semiconductor devices are manufactured from substrates such as wafers. Specifically, the semiconductor device is manufactured by forming a fine circuit pattern on the upper surface of the substrate by performing a deposition process, a photolithography process, an etching process, and the like.

As the design rule of the semiconductor device decreases, the pattern collapses due to the surface tension of the chemical solution or the adjacent patterns stick to each other in the process of drying the chemical solution after the wet process such as the etching process or the cleaning process is completed. (bridge) defects occur frequently. In addition, fine particles that exist deep between the patterns cause defects in the substrate.

One object of the present invention is to provide a substrate processing apparatus and a substrate processing method capable of suppressing generation of particles or contaminants and increasing substrate processing efficiency.

The object of the present invention is not limited thereto, and other objects not mentioned will be clearly understood by those skilled in the art from the following description.

The present invention provides an apparatus for processing a substrate. According to one embodiment, a substrate processing apparatus includes a process chamber providing a process atmosphere; a substrate support unit provided in the inner space of the process chamber and on which a substrate is placed; a processing container having an open top and providing a process space for processing a substrate; a nozzle unit supplying a chemical onto a substrate seated on the substrate support member, wherein the nozzle unit includes: a first nozzle provided at a center of the nozzle unit and spraying a first chemical onto the substrate; A second nozzle is provided around the first nozzle and sprays a second chemical, the second nozzle includes a plate having a plurality of spray holes, and the second chemical is sprayed from an upper part of the plate. It passes through the injection hole and is supplied onto the substrate.

According to an example, the nozzle unit may further include a subchamber having upper and lower openings, forming a processing space therein, and having the lower portion seated in the processing container.

According to an example, the subchamber may be coupled to the second nozzle to close the upper opening.

According to an example, an elevating unit configured to linearly move the processing container in a vertical direction may be further included.

According to one example, the first chemical may be a cleaning solution.

According to one example, the second chemical may be vaporized and provided.

According to one example, the second chemical may be sprayed while adjusting the process atmosphere to low vacuum or atmospheric pressure.

According to one example, the second chemical may be a dry gas.

According to one example, the second chemical may be an etching gas.

According to one example, the dry gas may be IPA vapor or ultrapure vapor or passivation vapor or inert gas.

In addition, the present invention provides a method of processing a substrate using a substrate processing apparatus. According to one embodiment, a substrate processing method includes the steps of seating a substrate on the support unit; moving a substrate into the processing container by moving relative positions of the substrate support unit and the processing container; lowering the nozzle unit to bring the second nozzle into close contact with the upper portion of the processing container; and treating the substrate by supplying a chemical.

In addition, according to another embodiment, the step of seating the substrate on the support unit; moving a substrate into the processing container by moving relative positions of the substrate support unit and the processing container; lowering the nozzle unit so that the subchamber is seated on an upper portion of the processing container; and treating the substrate by supplying a chemical.

The present invention also provides a system for processing a substrate. According to one embodiment, a substrate processing system includes a facility front end module; a buffer module in which the substrate is temporarily accommodated and standby; A processing module for processing the substrate, wherein the equipment front end module includes a load port in which a container for accommodating the substrate is placed, and a transfer frame provided with an index robot for transporting the substrate between the load port and the processing module. and the processing module includes a substrate processing device comprising the above-described substrate processing device and processing the substrate; and a transfer frame having a main transfer robot for transferring the substrate between the substrate processing apparatus and the buffer module.

In addition, the present invention provides a method of processing a substrate using a substrate processing system. According to an embodiment, the substrate processing method includes: transferring a substrate and a subchamber having upper and lower openings and a processing space formed therein by a robot arm of the transfer robot to the process chamber; seating a substrate on the support unit; elevating the processing vessel and seating the upper portion of the subchamber and the processing vessel; lowering the nozzle unit to bring the second nozzle into close contact with the upper part of the sub-chamber; and treating the substrate by supplying a chemical.

According to the present invention, generation of particles or contaminants can be suppressed and substrate processing efficiency can be increased.

According to the present invention, since various processes are performed in an airtight chamber without movement between chambers, a clean and uncontaminated environment can be maintained.

1 is a plan view schematically illustrating a substrate processing system.
2 is a plan configuration diagram showing the configuration of a substrate processing apparatus according to the present invention.
3 is a cross-sectional side view showing the configuration of a substrate processing apparatus according to the present invention.
4 is a view showing a fluid supply member connected to the nozzle unit.
5 is a flow chart illustrating a processing method of the substrate processing apparatus of the present embodiment by taking a cleaning process and a drying process as examples.
6 and 7 are diagrams illustrating the substrate processing apparatus of this embodiment by taking a cleaning process as an example.
8 is a diagram for explaining a drying step.
9 is a view showing a state of use of a subchamber according to another embodiment of the present invention.
10 is a flowchart illustrating a substrate processing method using the subchamber of FIG. 9 .
11 is a view showing another embodiment of the present invention not including a subchamber.
12 is a diagram for explaining an electric field induction method using bias power in a substrate cleaning process.
13 is a plan configuration diagram showing the configuration of a substrate processing apparatus according to another embodiment of the present invention.
14 is a cross-sectional side view showing the configuration of the substrate processing apparatus according to the embodiment of FIG. 13 .
15 is a configuration diagram showing first and second chemical supply units connected to a second nozzle unit.
16 is a diagram for explaining an electric field induction method using bias power in a substrate cleaning process according to another embodiment of the present invention.
17 is a view showing a modified example of an upper electrode.
18 is a view showing a lower electrode installed in a spin head.
19 is a view showing a lower electrode installed in a spin head according to another embodiment.
20 is a flowchart illustrating a substrate processing method in a substrate processing apparatus according to an embodiment.

Since the present invention can apply various transformations and have various embodiments, specific embodiments will be illustrated in the drawings and described in detail in the detailed description. However, it should be understood that this is not intended to limit the present invention to specific embodiments, and includes all transformations, equivalents, and substitutes included in the spirit and scope of the present invention. In describing the present invention, if it is determined that a detailed description of related known technologies may obscure the gist of the present invention, the detailed description will be omitted.

Terms used in this application are only used to describe specific embodiments, and are not intended to limit the present invention. Singular expressions include plural expressions unless the context clearly dictates otherwise. In this application, the terms "include" or "have" are intended to designate that there is a feature, number, step, operation, component, part, or combination thereof described in the specification, but one or more other features It should be understood that the presence or addition of numbers, steps, operations, components, parts, or combinations thereof is not precluded.

Terms such as first and second may be used to describe various components, but the components should not be limited by the terms. These terms are only used for the purpose of distinguishing one component from another.

Hereinafter, embodiments according to the present invention will be described in detail with reference to the accompanying drawings. description is omitted.

1 is a plan view schematically showing a substrate processing system of the present invention.

Referring to FIG. 1 , a substrate processing system 1000 according to an embodiment may include a facility front end module 10 , a buffer module 20 and a processing module 50 . The equipment front end module 10, buffer module 20 and processing module 50 are arranged in a row. Hereinafter, the direction in which the equipment front end module 10, the buffer module 20, and the processing module 50 are arranged is referred to as a first direction, and a direction perpendicular to the first direction when viewed from above is referred to as a second direction. And, a direction perpendicular to the plane including the first direction and the second direction is defined as a third direction.

The equipment front end module 10 is disposed in front of the substrate processing system 1000 in the first direction. Facility front end module 10 includes four load ports 12 and one index robot 13. The four load ports 12 are arranged in front of the equipment front end module 10 in the first direction. A plurality of load ports 12 are provided and they are arranged along the second direction. The number of load ports 12 may increase or decrease depending on process efficiency and footprint conditions of the substrate processing system 1000 . A carrier (eg, a cassette, a FOUP, etc.) accommodating a substrate W to be provided to the process and a substrate W after the process process is seated in the load ports 12 . The carrier 16 is formed with a plurality of slots for accommodating substrates in a state in which they are arranged horizontally with respect to the ground.

The index robot 13 is disposed adjacent to the load port 12 in the first direction. The index robot 13 is installed between the load port 12 and the buffer module 20 . The index robot 13 transfers the substrate W waiting on the upper layer of the buffer module 20 to the carrier 16 or transfers the substrate W waiting on the carrier 16 to the lower layer of the buffer module 20. do.

The buffer module 20 is installed between the equipment front end module 10 and the processing module 50. In the buffer module 20, a substrate W to be provided to a process before being transferred by the index robot 13 or a substrate W whose process has been completed before being transferred by the main transfer robot 30 is temporarily accommodated and is in standby. is a place to

The main transfer robot 30 is installed on the transfer frame 40 and transfers substrates between each substrate processing apparatus 1 and the buffer module 20 . The main transfer robot 30 transfers substrates to be provided in the waiting process in the buffer module 20 to each substrate processing device 1, or transfers substrates processed in each substrate processing device 1 to the buffer module 20. ) is transferred to

The transfer frame 40 is disposed along a first direction within the processing module and provides a passage for the main transfer robot 30 to move. On both sides of the transfer frame 40, substrate processing apparatuses 1 are disposed facing each other along the first direction. Moving rails are installed on the transfer frame 40 so that the main transfer robot 30 moves along the first direction and can move up and down to the upper and lower floors of the substrate processing apparatus 1 and to the upper and lower floors of the buffer module 20. .

The substrate processing apparatus 1 is disposed to face each other on both sides of the moving passage 40 where the main transfer robot 30 is installed. The substrate processing system 1000 includes a plurality of upper and lower substrate processing devices 1, but the number of substrate processing devices 1 increases or decreases depending on the process efficiency and footprint conditions of the substrate processing system 1000. You may. Each substrate processing apparatus 1 is composed of an independent housing, and thus, a substrate processing process may be performed in an independent form within each substrate processing apparatus.

In the following embodiments, a substrate processing apparatus that performs a cleaning process and a drying process will be described as an example.

2 is a plan configuration diagram showing the configuration of a substrate processing apparatus according to the present invention. 3 is a cross-sectional side view showing the configuration of a substrate processing apparatus according to the present invention.

In this embodiment, a semiconductor substrate is shown and described as an example as a substrate processed by the substrate processing apparatus 1, but the present invention is not limited thereto and may be applied to various types of substrates such as glass substrates.

Referring to FIGS. 2 and 3 , a substrate processing apparatus 1 according to the present invention is an apparatus for etching, passivating, or cleaning a substrate surface using various chemicals. The substrate processing apparatus 1 includes a chamber 800 , a processing container 100 , a substrate support unit 200 , a fixed nozzle 500 , an exhaust unit 400 and a nozzle unit 900 .

The chamber 800 provides a sealed inner space, and a fan filter unit 810 is installed on the top. The fan filter unit 810 generates a vertical air current inside the chamber 800 .

In the fan filter unit 810, a filter and an air supply fan are modularized and provided as one unit. The fan filter unit 810 filters high humidity outside air and supplies it to the inside of the chamber. High-humidity outside air passes through the fan filter unit 810 and is supplied into the chamber to form a vertical airflow. This vertical airflow provides a uniform airflow over the substrate, and contaminants (fume) generated in the process of processing the substrate surface by the chemical pass through the intake ducts of the processing container 100 together with the air to the exhaust unit 400. ) to maintain high cleanliness inside the treatment vessel.

As shown in FIG. 3 , the chamber 800 is divided into a process area 816 and a maintenance area 818 by a horizontal partition wall 814 . Although only a part is shown in the drawing, the maintenance area 818 is a space in which the driving unit of the lifting unit and the like are located in addition to the discharge lines 141, 143, and 145 connected to the processing container 100 and the sub-exhaust line 410, such a maintenance area ( 818) is preferably isolated from the process area where substrate processing takes place.

The processing container 100 has a cylindrical shape with an open top and provides a process space for processing the substrate W. The open upper surface of the processing container 100 serves as a path for transporting and transporting the substrate W. A substrate support unit 200 is positioned in the process space. The substrate support unit 200 supports the substrate W and rotates the substrate during the process.

The processing container 100 is divided into an upper space 132a where the spin head 210 is located, and the upper space 132a is divided by the spin head 210, and an exhaust duct 190 is provided at the lower end to perform forced exhaust. A connected lower space 132b is provided. In the upper space 132a of the processing vessel 100, first, second, and third annular suction ducts 110 introduce and suck chemicals (including pure water, dissolved water, and vaporized state) scattered on the rotating substrate. , 120, 130) are arranged in multiple stages. In this embodiment, the processing vessel is shown as having three intake ducts, but is not limited thereto, and the processing vessel may include two intake ducts or three or more intake ducts.

The first, second and third suction ducts 110, 120 and 130 have exhaust ports H communicating with one common annular space (corresponding to the lower space of the container). An exhaust duct 190 connected to the exhaust unit 400 is provided in the lower space 132b. Specifically, the first, second and third suction ducts 110, 120 and 130 each have a bottom surface having an annular ring shape and a side wall extending from the bottom surface and having a cylindrical shape. The second suction duct 120 surrounds the first suction duct 110 and is spaced apart from the first suction duct 110 . The third suction duct 130 surrounds the second suction duct 120 and is spaced apart from the second suction duct 120 .

The first, second, and third suction ducts 110, 120, and 130 are first, second, and third recovery spaces RS1, RS2, and RS3 into which airflow containing chemicals scattered from the substrate W flows. provides The first recovery space RS1 is defined by the first suction duct 110, and the second recovery space RS2 is defined by the separation space between the first suction duct 110 and the second suction duct 120, , The third recovery space RS3 is defined by the separation space between the second suction duct 120 and the third suction duct 130.

Upper surfaces of the first, second, and third suction ducts 110, 120, and 130 each have an inclined surface with an open central portion and a distance from the corresponding bottom surface gradually increasing from the connected sidewall toward the opening. Accordingly, the chemical scattered from the substrate W flows into the recovery spaces RS1 , RS2 , and RS3 along the upper surfaces of the first to third suction ducts 110 , 120 , and 130 .

Meanwhile, the processing vessel 100 is coupled with an elevating unit 600 that changes the vertical position of the processing vessel 100 . The lifting unit 600 linearly moves the processing container 100 in the vertical direction. As the processing container 100 moves up and down, the relative height of the processing container 100 with respect to the spin head 210 is changed. The lifting unit 600 may include a bracket 612 , a moving shaft 614 , and an actuator 616 . The bracket 612 is fixedly installed on the outer wall of the processing container 100, and a moving shaft 614 moved in a vertical direction by a driver 616 is fixedly coupled to the bracket 612. When the substrate W is loaded into or unloaded from the spin head 210, the processing chamber 100 descends so that the spin head 210 protrudes upward from the processing chamber 100. In addition, when the process is in progress, the height of the processing container 100 may be adjusted so that the chemical may flow into the predetermined suction ducts 110, 120, and 130 according to the type of chemical supplied to the substrate W. Accordingly, the relative vertical position between the processing container 100 and the substrate w is changed. Accordingly, the processing vessel 100 may have different types of chemicals and fumes recovered for each of the recovery spaces RS1, RS2, and RS3.

In this embodiment, the substrate processing apparatus 1 vertically moves the processing container 100 to change a relative vertical position between the processing container 100 and the substrate support unit 200 . However, the substrate processing apparatus 1 may vertically move the substrate support unit 200 to change a relative vertical position between the processing container 100 and the substrate support unit 200 .

The substrate support unit 200 is installed inside the processing container 100 . The substrate support unit 200 supports the substrate W during the process, and may be rotated by a driving unit 240 to be described later while the process is in progress. The substrate support unit 200 has a spin head 210 having a circular upper surface, and support pins 212 and chucking pins 214 supporting the substrate W are placed on the upper surface of the spin head 210. have The support pins 212 are arranged in a regular arrangement at a predetermined distance apart from each other on the edge of the upper surface of the spin head 210, and protrude upward from the spin head 210. The support pins 212 support the lower surface of the substrate W so that the substrate W is supported while being spaced apart from the spin head 210 in an upward direction. Chucking pins 214 are disposed outside the support pins 212, respectively, and the chucking pins 214 protrude upward. The chucking pins 214 align the substrate W supported by the plurality of support pins 212 so that the substrate W is placed on the spin head 210 in a proper position. During the process, the chucking pins 214 come into contact with the side of the substrate (W) to prevent the substrate (W) from being separated from its original position.

A support shaft 220 supporting the spin head 210 is connected to a lower portion of the spin head 210, and the support shaft 220 is rotated by a driving unit 230 connected to a lower end thereof. The driving unit 230 may be provided with a motor or the like. As the support shaft 220 rotates, the spin head 210 and the substrate W rotate.

The exhaust unit 400 recovers chemicals from the first, second, and third suction ducts 110, 120, and 130 to make the inside of the chamber a low vacuum (eg, 10-3 torr) atmosphere during the process. Provides exhaust pressure (suction pressure) to the intake duct. The exhaust unit 400 includes a sub exhaust line 410 connected to the exhaust duct 190 and a damper 420 . A vacuum pump (not shown) may be installed in the sub exhaust line 410 . Chemicals from the nozzle unit 900 may be sprayed while the exhaust unit 400 forms a reduced-pressure atmosphere.

The fixed nozzles 500 are installed on top of the processing container 100 . The fixed nozzle 500 sprays the chemical onto the substrate W placed on the spin head 210 . The spraying angle of the fixed nozzle 500 can be adjusted according to the processing position of the substrate.

The nozzle unit 900 is moved to the center of the substrate through a swing movement and sprays chemicals for cleaning and drying on the substrate. The nozzle unit 900 includes a support shaft 910 , a driving unit 920 , a nozzle arm 940 , and a nozzle member 980 .

A fluid supply member 960 for selectively supplying a vapor phase chemical and a liquid phase chemical is connected to the nozzle unit 900 .

4 is a view showing a fluid supply member connected to the nozzle unit.

Referring to FIG. 4 , the fluid supply member 960 includes a first chemical supply source 962, a steam generator 964 that vaporizes the first chemical, an ultra-pure water vapor generator 966, and a second chemical supply unit 970. ). These may be selectively combined or removed as needed, and are not limited to the illustrated embodiment.

A first chemical source 962 is connected to a first nozzle line 987 and a second nozzle line 988 . The steam generator 964 and the ultrapure steam generator 966 are connected to the second nozzle line 988 . The first nozzle line 987 is connected to the first nozzle 986 . The second nozzle line 988 is connected to the second nozzle 983 .

The first nozzle 986 is located at the lower center of the nozzle unit 980 and sprays the first chemical. The first chemical may be a cleaning solution. The first chemical may be first dissolved water obtained by dissolving at least one gaseous material (etching gas) having an etching effect on the surface of the substrate in deionized water. The first chemical may be second dissolved water obtained by dissolving at least one gaseous material (passivation gas) having a passivation effect on the substrate surface in deionized water. In order to increase the efficiency of dissolving the etching gas and the passivation gas in the deionized water, it is preferable to use deionized water that has been previously degassed. Degassing the deionized water ideally removes various gases already dissolved in the deionized water and increases the gas dissolution capacity to dissolve the desired gases. In other words, if various gases remain in the deionized water before dissolving the desired gas, the capacity to dissolve the desired gas in the deionized water is insufficient, and the desired concentration may not be obtained. In this regard, there is a possibility that the concentration of the gas dissolved in the deionized water cannot be set to a desired concentration based on the change in the flow rate of the deionized water. In particular, when a gas with low solubility is dissolved in deionized water, it is necessary to deaerate the deionized water in advance in order to maintain a constant concentration even if the flow rate of the deionized water fluctuates.

The second nozzle 983 is provided around the first nozzle 986 . The second nozzle 983 includes a nozzle body 984 and a spray plate 981 . The first nozzle 986 is located at the center of the spray plate 981 . The top of nozzle body 984 is coupled to nozzle arm 940 . A diffusion space 985 is formed inside the nozzle body 984 . A spray plate 981 is coupled to a lower portion of the nozzle body 984 . A plurality of spray holes 982 are formed in the spray plate 981 . The nozzle body 984 and the spray plate 981 may be integrally formed.

The second nozzle line 988 may be connected to the first chemical supply source 961 , the second chemical supply source 971 , and the ultrapure water vapor generator 966 . The second chemical supplied by the second chemical source is a vapor phase chemical. The second nozzle 980 receives vapor phase chemical from the vapor generator 964 or pure vapor from the vapor supply unit 966 and supplies it onto the substrate W. The chemical introduced into the diffusion space 985 of the nozzle body 984 through the second nozzle line 988 passes through the spray hole 982 of the spray plate 981 and is sprayed onto the substrate in a diffused state. A component of the second chemical may be a cleaning solution or pure water. The second chemical may be a chemical solution having the same components as the first chemical. Alternatively, the second chemical may be a dry gas.

The subchamber 700 is provided between the nozzle unit 700 and the processing vessel. The subchamber 700 includes a vertical member 710 and a horizontal member 720 . The horizontal member 720 is provided on top of the vertical member 710 . The horizontal member 720 has an opening corresponding to the diameter of the second nozzle 983 at the center. The horizontal member 720 may be integrally formed with the vertical member 710 or provided by bonding. A lower portion of the vertical member 710 is open. A processing space 721 is formed inside the subchamber 700 . Hereinafter, the subchamber 700 will be described in detail.

5 is a flow chart illustrating a processing method of the substrate processing apparatus of the present embodiment by taking a cleaning process and a drying process as an example, and FIGS. 6 and 7 are diagrams illustrating the substrate processing apparatus of the present embodiment by taking a cleaning process as an example. 5, 6 and 7 will be described.

When the substrate W is placed on the substrate support unit 200 (S110), the processing container 100 is raised (S120). The subchamber 700 may be provided by being coupled to the second nozzle 983 . The opening of the horizontal member 720 is closed by being coupled with the second nozzle 983 . When the processing container 100 rises, the subchamber 700 and the end of the third suction duct 130 provided at the top of the processing container 100 are seated and brought into close contact, thereby sealing the processing space 721 (S130). ). In a state where the processing space 721 is sealed, a cleaning and drying process is performed on the substrate W (S140).

The cleaning process may include a pretreatment step and a solution cleaning step. The cleaning step may be performed while the substrate is rotating.

As shown in FIG. 6, in the pretreatment step, water vapor is supplied to replace the atmosphere inside the chamber. The pretreatment step may be performed in a chamber atmosphere under a low vacuum (eg, 10 -3 torr) state. That is, since the cleaning (or etching) chemical solution in the form of vapor first penetrates into the pattern as a gas in the pretreatment step, an easy cleaning process can be performed due to the preservation of the dissolved amount and the polarity effect of the same properties when the cleaning chemical solution is discharged.

In the pretreatment step, the second nozzle 980 receives the vapor phase first chemical from the steam generator 964 or pure steam from the steam supply unit 966 and supplies it onto the substrate W. In the pretreatment step, the chemical vapor may be water vapor or pure water vapor in which at least one gaseous material having an etching action on the surface of the substrate is dissolved or a cleaning solution.

As shown in FIG. 7 , the solution cleaning step cleans the substrate surface by discharging the cleaning solution to the substrate surface. The solution cleaning step takes place in an atmospheric pressure environment. The cleaning solution is supplied to the top of the rotating substrate through the first nozzle 986 .

In this way, since surface penetration and modification are initiated by pre-discharge of chemical vapor or pure water vapor, penetration into small particles (etching residues) existing deep in the pattern surface having high AR is easy.

8 is a diagram for explaining a drying step.

Referring to FIG. 8, the drying step provides IPA vapor for drying, vapor capable of passivation, or inert gas without reaction to the rotating substrate in a chamber atmosphere of low vacuum or atmospheric pressure to form an atmosphere during drying. do. During drying, the spin head 210 rotates. In the drying step, by supplying IPA vapor or vapor capable of passivation, the occurrence of thinning can be reduced by controlling surface energy and hydrophobic modification between patterns. In addition, when inert gas or ultrapure water vapor is supplied in the drying step, generation of static electricity can be reduced.

9 is a view showing a state of use of a subchamber according to another embodiment of the present invention, and FIG. 10 is a flow chart showing a substrate processing method using the subchamber of FIG. 9 .

9 and 10, the robot arm of the transport robot 30 picks up the subchamber 1700 and the substrate W together and transfers them to the inside of the process chamber 800 of the substrate processing apparatus 1 (S210). ). The transferred substrate W is placed on the substrate support unit 200 (S220), and the processing container 100 is raised (S230). As the processing container 100 is elevated, the subchamber 1700 is seated on top of the processing container 100 (S240). When the nozzle unit 900 descends (S250) while the subchamber 1700 is seated on the top of the processing container 100, the second nozzle 983 and the horizontal member 1720 of the subchamber 1700 are aligned. It touches and adheres (S260). After going through the above steps, the subchamber 1700 is disposed in the same manner as in the states of FIGS. 6, 7, and 8 .

The subchambers 700 and 1700 increase sealing power between the nozzle unit 900 and the processing container 100, and maintenance is easy. In addition, by using the subchambers 700 and 1700, the space within the chamber is divided and sealed to reduce the amount of gas to be exhausted when decompressing the chamber. As the displacement is reduced, the PM cycle can be reduced.

11 is a view showing another embodiment of the present invention not including a subchamber.

Referring to FIG. 11 , the subchambers 700 and 1700 are not included, and the nozzle unit 900 and the processing container 100 are brought into direct contact to seal the space. The second nozzle 983 of the nozzle unit 900 contacts the upper end of the processing container 100 to form an enclosed processing space 101 . According to the embodiment shown in FIG. 10 , as in other embodiments, the space within the chamber is divided and sealed to reduce the amount of gas to be exhausted when depressurizing the chamber. As the displacement is reduced, the PM cycle can be reduced.

12 is a diagram for explaining an electric field induction method using bias power in a substrate cleaning process.

Referring to FIG. 12, the direction of electric field formation is from the (+) electrode to the (-) electrode, and when a bias of (+)/(-) is given, the particles (particles) having + ions are F= according to the potential difference. A field of qE is given. When the lower electrode 730 is provided in the spin head 210 and the upper electrode 740 is mounted on the nozzle body 984 of the second nozzle 983 and bias power 760 is applied to the electrode, the induced current An electric field is generated by The lower electrode 730 may be provided in a ring shape within the spin head 210 , and the upper electrode 740 may be provided in a ring shape within the nozzle body 984 . The bias power 760 may be provided to the lower electrode 730 .

According to the present embodiment, small particles (etching residues) having a positive (+) polarity move more easily to the upper surface of the substrate (W) due to the behavior of the electric field during the cleaning process. Therefore, cleaning efficiency can be increased. Electric field induction is not limited to using bias power.

13 is a plan configuration diagram showing the configuration of a substrate processing apparatus according to the present invention. 14 is a side cross-sectional view showing the configuration of a substrate processing apparatus according to the present invention.

13 and 14, a substrate processing apparatus 1 according to the present invention is an apparatus for etching, passivating, and cleaning a substrate surface using various processing fluids, and includes a second nozzle in a first nozzle unit 900. It further includes unit 300. The description of the first nozzle unit 900 is replaced with the nozzle unit 900 described above.

The second nozzle unit 300 is moved to the upper portion of the center of the substrate through a swing movement and sprays dissolved water for etching or passivation treatment on the substrate. The second nozzle unit 300 includes a support shaft 310 , a driving unit 320 , a nozzle arm 330 , and a first nozzle 340 .

A first dissolved water supply unit 380 and a second dissolved water supply unit 390 are connected to the second nozzle unit 300 .

The first dissolved water supply unit 380 supplies first dissolved water obtained by dissolving at least one gaseous material (hereinafter referred to as etching gas) having an etching effect on the substrate surface in deionized water to the first nozzle 340 . The second dissolved water supply unit 390 supplies second dissolved water obtained by dissolving at least one gaseous material (hereinafter referred to as passivation gas) having a passivation effect on the substrate surface in deionized water to the first nozzle 340 . do.

15 is a configuration diagram showing first and second dissolved water supply units connected to a second nozzle unit.

Referring to FIG. 15 , the first dissolved water supply unit 380 is a first dissolution treatment unit that dissolves the etching gas supplied from the etching gas supply source 382 and the etching gas supply source 382 in deionized water to produce first dissolved water. (384). For example, the first dissolved water supply unit 382 uses SF6 gas, but is not limited thereto, and various etching gases may be used.

A solvent such as ethanol, hexane, or benzene may be used in the first dissolution treatment unit 384 to increase the solubility of the etching gas.

The second dissolved water supply unit 390 is a second dissolution treatment unit 394 for preparing second dissolved water by dissolving the passivation gas supplied from the passivation gas supply source 392 and the passivation gas supply source 392 in deionized water. can include For example, the second dissolved water supply unit 392 uses a fluorocarbon-based gas (C4F8), but is not limited thereto, and various passivation gases may be applied.

A solvent such as a solvent or a polymer may be used in the second dissolution processing unit 394 to increase the solubility of the passivation gas.

In order to increase the efficiency of dissolving the etching gas and the passivation gas in the deionized water, it is preferable to use deionized water that has been previously degassed. Degassing the deionized water ideally removes various gases already dissolved in the deionized water and increases the gas dissolution capacity to dissolve the desired gases. In other words, if various gases remain in the deionized water before the desired gas is dissolved, the capacity to dissolve the desired gas in the deionized water is insufficient, and the desired concentration may not be reached. In this regard, there is a possibility that the concentration of the gas dissolved in the deionized water cannot be set to a desired concentration based on the change in the flow rate of the deionized water. In particular, when a gas with low solubility is dissolved in deionized water, it is necessary to deaerate the deionized water in advance in order to maintain a constant concentration even if the flow rate of the deionized water fluctuates.

FIG. 16 is a diagram for explaining an electric field induction method using bias power in a substrate cleaning process according to an embodiment different from that of FIG. 12 .

Referring to FIG. 16 , a line-shaped conductor is provided as an upper electrode 720 in the second nozzle unit 300 . The line-shaped upper electrode 720 is installed on the second nozzle unit 300 . An electric field is formed by bias power applied to the lower electrode 710 within the spin head 210 . The direction of electric field formation is from the (+) electrode to the (-) electrode, and when a bias of (+)/(-) is given, particles with positive ions (particles) have a field of F=qE according to the potential difference given

17 is a view showing a modified example of an upper electrode.

Referring to FIG. 17 , the upper electrode 750 is provided in a ring shape.

The upper electrode 750 is installed separately from the nozzle unit. Installation of the upper electrode 750 is not limited to the first nozzle unit or the second nozzle unit. The upper electrode 750 is positioned above the spin head 210 . The upper electrode 750 preferably has a lifting structure capable of moving up and down.

When two ring-shaped electrodes are placed side by side, an electric field is formed as an induced current flows to the second electrode when a current is passed through the first electrode while changing the value. When an induced electric field is applied to substrate cleaning, since an electric field is formed by shaking current only on one electrode, the behavior of the etch residue may be affected.

An electrode providing current may be the upper electrode 750 or the lower electrode 730 .

18 and 19 are views showing the lower electrode 710 installed on the spin head 210.

Referring to FIGS. 18 and 19 , the lower electrode 710 may be provided in a ring shape within the spin head 210 . As shown in FIG. 18 , a plurality of rings having different diameters may be radially disposed on the lower electrode 710 . As shown in FIG. 19 , each of the rings may be interconnected by a cross bar 712 . However, the arrangement of the lower electrode 710 is not limited to FIGS. 18 and 19 .

20 is a flowchart illustrating a substrate processing method in a substrate processing apparatus according to an embodiment.

Referring to FIG. 20, the substrate processing method according to an embodiment of the present invention includes an etching step (S10), a purge step (S20), a passivation step (S30), a purge step (S40), a cleaning step (S50), and drying. Step S60 is included. Here, the etching step (S10), the purge step (S20), the passivation step (S30), and the purge step (S40) are repeated until a desired pattern is formed on the substrate.

The substrate W includes an etch mask layer pattern 95 having an opening 94 exposing a partial surface of the etch target layer 92 on the etch target layer 92 . The etch mask layer pattern 95 has an exposed upper surface that is sufficiently larger than the exposed area of the etch target layer 92 exposed by the opening 94 . An exposed portion of the etch target layer 92 exposed by the opening 94 is a portion where a trench 96 of a certain depth is to be formed. In one example, the etch target layer 92 may include at least one of sapphire, silicon, polysilicon, oxide, nitride, and metal. In one example, the etching mask layer pattern 95 may be formed of a photoresist layer.

In the etching step ( S10 ), the exposed portion of the etch target layer 92 is etched by supplying the first dissolved water to the surface of the rotating substrate.

In the passivation step (S30), the passivation layer 97 is deposited or formed on the surface of the etched portion by supplying the second dissolved water to the surface of the rotating substrate.

Meanwhile, after the etching and passivation steps S10 and S30 are finished, purge steps S20 and S40 may be performed, respectively. The purge steps ( S20 and S40 ) may include a process of supplying an inert gas to replace the inside of the chamber or spraying ultrapure water on the surface of the substrate to remove dissolved water remaining on the surface of the substrate.

As described above, the present invention uses a vaporized or liquefied etching gas or passivation gas without a dry etching process. Therefore, since the etching, cleaning, and passivation processes are performed in one chamber without movement between chambers, a clean environment uncontaminated can be maintained. In addition, by adjusting the concentration of dissolved water, it is not only applicable to patterns with high AR, but also the over-etching issue can be improved.

The above description is merely an example of the technical idea of the present invention, and various modifications and variations can be made to those skilled in the art without departing from the essential characteristics of the present invention. Therefore, the embodiments disclosed in the present invention are not intended to limit the technical idea of the present invention, but to explain, and the scope of the technical idea of the present invention is not limited by these embodiments. The protection scope of the present invention should be construed according to the claims below, and all technical ideas within the equivalent range should be construed as being included in the scope of the present invention.

800: chamber 100: processing vessel
200: substrate support unit
400: exhaust unit 900: nozzle unit

Claims (16)

In the apparatus for processing the substrate,
a process chamber providing a process atmosphere;
a substrate support unit provided in the inner space of the process chamber and on which a substrate is placed;
a processing container having an open top and providing a process space for processing the substrate;
Including a nozzle unit for supplying a chemical onto the substrate seated on the substrate support unit,
The nozzle unit,
a first nozzle provided at the center of the nozzle unit and spraying a first chemical onto the substrate;
A second nozzle provided around the first nozzle and spraying a second chemical,
The second nozzle,
It includes a plate on which a plurality of injection holes are formed;
The second chemical,
It is supplied on the substrate through the injection hole at the top of the plate,
The nozzle unit,
The substrate processing apparatus further includes a subchamber having upper and lower openings, forming a processing space therein, and having the lower portion seated in the processing container. delete According to claim 1,
The sub chamber,
a cylindrical vertical member having a circumference equal to or larger than the diameter of the second nozzle;
A substrate processing apparatus comprising a horizontal member having an opening corresponding to the diameter of the second nozzle at the center. According to claim 1,
The sub chamber,
A substrate processing apparatus provided to be coupled to the second nozzle so that the upper opening is closed. According to claim 1,
The substrate processing apparatus,
The substrate processing apparatus further comprises an elevating unit configured to linearly move the processing vessel in a vertical direction. According to claim 1,
Wherein the first chemical is a cleaning solution. According to claim 1,
The second chemical is a substrate processing apparatus provided by vaporization. According to claim 1,
A substrate processing apparatus for spraying the second chemical while adjusting a process atmosphere to low vacuum or atmospheric pressure. According to claim 1,
Wherein the second chemical is a dry gas. According to claim 1,
The second chemical is an etching gas substrate processing apparatus. According to claim 9,
The dry gas is IPA vapor or ultrapure vapor or passivation capable vapor or inert gas substrate processing apparatus. A process chamber providing a process atmosphere, a substrate support unit provided in the inner space of the process chamber, on which a substrate is placed, a process container having an open top and providing a process space for processing the substrate, and the substrate support unit a first nozzle provided at a center of the nozzle unit and spraying a first chemical onto the substrate; a second nozzle provided around the first nozzle and spraying a second chemical; A method for processing a substrate using a substrate processing apparatus supplied on the substrate through a spray hole,
seating the substrate on the support unit;
moving the substrate into the processing container by moving relative positions of the substrate support unit and the processing container;
lowering the nozzle unit to bring the second nozzle into close contact with the upper part of the processing container;
A substrate processing method comprising the step of processing a substrate by supplying a chemical. According to claim 12,
The step of treating the substrate by supplying the chemical is a substrate cleaning step of cleaning the surface of the substrate,
The substrate cleaning step,
a pretreatment step of substituting the atmosphere inside the chamber in a low-vacuum state using cleaning liquid vapor;
A substrate processing method comprising a solution cleaning step of cleaning a substrate using a cleaning solution in an atmospheric chamber atmosphere. A method for processing a substrate using the substrate processing apparatus of claim 1,
seating a substrate on the support unit;
moving a substrate into the processing container by moving relative positions of the substrate support unit and the processing container;
lowering the nozzle unit so that the subchamber is seated on an upper portion of the processing container;
A substrate processing method comprising the step of processing a substrate by supplying a chemical. In the system for processing the substrate,
equipment front end module;
a buffer module in which the substrate is temporarily accommodated and standby;
Including a processing module for processing the substrate,
The facility front end module,
a load port in which a container accommodating the substrate is placed;
a transfer frame provided with an index robot for transporting the substrate between the load port and the processing module;
The processing module,
a substrate processing apparatus comprising the substrate processing apparatus according to any one of claims 1 and 3 to 11 and processing the substrate;
A substrate processing system comprising a transfer frame having a main transfer robot for transporting the substrate between the substrate processing apparatus and the buffer module. A facility front end module, a buffer module in which a substrate is temporarily stored and waiting, and a processing module for processing the substrate, wherein the facility front end module includes a load port in which a container accommodating the substrate is placed, the load port and the A transfer frame provided with an index robot for transporting the substrate between processing modules, wherein the processing module includes a process chamber providing a process atmosphere and a substrate support unit provided in an inner space of the process chamber and on which the substrate is placed; A processing container having an open top and providing a process space for processing the substrate and a nozzle unit supplying chemicals onto the substrate seated on the substrate support unit, wherein the nozzle unit is located at the center of the nozzle unit. It includes a first nozzle provided around the substrate and spraying a first chemical on the substrate and a second nozzle provided around the first nozzle and spraying a second chemical, wherein the second nozzle has a plurality of spray holes. A method of treating a substrate using a substrate processing system comprising a plate, wherein the second chemical is supplied to the substrate through the injection hole from an upper portion of the plate,
transferring, by the robot arm of the index robot, the substrate and a sub-chamber having upper and lower openings and a processing space formed therein to the process chamber;
seating the substrate on the substrate support unit;
elevating the processing vessel so that the lower portion of the subchamber is seated on the upper portion of the processing vessel;
lowering the nozzle unit so that the second nozzle and the upper part of the sub-chamber come into close contact with each other;
and processing the substrate by supplying the chemical.

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