KR101739240B1 - Liquid crystal display device - Google Patents

Abstract

The liquid crystal display device of the present invention includes an opposing substrate 100 provided with a black matrix 2 having a plurality of pixel openings and an array substrate 300 formed by arranging an optical sensor S1 and an active element and a metal interconnection And a liquid crystal cell sandwiched between both substrates 100 and 300. The black matrix 2 has a transmittance of 50% or more in a detection wavelength range of light wavelengths of 680 nm to 800 nm , And has a transmission characteristic that the transmittance becomes higher at the longer wavelength side than this. The optical sensor S1 has a sensitivity region including the detection wavelength region and is located closer to the liquid crystal layer than the active element and overlaps with the black matrix 2 when viewed from a plane. The metal wiring is formed such that at least the surface layer thereof is made of copper or a copper alloy, and the region overlapping with the photosensor S1 when viewed in plan view is embedded.

Description

[0001] LIQUID CRYSTAL DISPLAY DEVICE [0002]

The present invention relates to a liquid crystal display device having an optical sensor, and more particularly to a liquid crystal display device capable of improving the sensitivity of an infrared region of an optical sensor.

The present application claims priority based on Japanese Patent Application No. 2013-142043 filed on July 5, 2013, the contents of which are incorporated herein by reference.

2. Description of the Related Art As a means for directly inputting selection information and the like directly from a display screen of a liquid crystal display device, recently, a capacitance type using a touch panel has become widespread. The touch panel is generally used by being attached to a display screen of a liquid crystal display device or the like.

However, the touch panel has a problem that an observer who is separated from the display screen is difficult to operate. In addition, since the thickness and weight of the touch panel are applied to the display device, the touch panel has been hampering the reduction in thickness and weight in a small device such as a cellular phone or a tablet.

For this reason, an optical sensor is provided inside the liquid crystal display so that an observer at a position apart from the display screen can be operated, and the sensing by the optical sensor has been studied. Further, in a liquid crystal display device provided with an optical sensor, it is desired to realize accurate color separation in the field of image pickup, color copying, optical communication, and the like.

For example, Patent Document 1 discloses an input technique in which a color filter substrate having a detection filter and a photoelectric sensor are used, and input is performed from a screen using visible light of a first wavelength and nonvisible light of a second wavelength have. Specifically, in order to solve the problem that the process is increased by separately providing an infrared filter for transmitting infrared light which is invisible light, a technique for solving such a problem is disclosed by overlapping the colors of the color filters.

However, in the structure in which the colors of the color filters described in Patent Document 1 are superimposed on each other, there is a possibility that an improper step is generated in the liquid crystal alignment. Further, in the structure in which the colors of the color filters are superimposed, the transmission area of the detection filter (infrared filter) becomes 800 nm or later, and this structure is not suitable for color separation of red, green, and blue. Specifically, there is a problem that light in a wavelength region near 680 nm to about 800 nm can not be well separated.

Further, for example, Patent Document 2 discloses a technique of providing a transistor at a position overlapping a photodiode. However, the technique described in Patent Document 2 is a technique for making a display device inexpensive or making it small and lightweight, and no technology for improving the sensitivity of a photodiode which is an optical sensor has been disclosed at all, and a technique relating to a transistor or a photodiode No wiring technology or oxide semiconductor technology is disclosed.

Further, for example, Patent Document 3 discloses a technology relating to an active matrix type display substrate including a thin film transistor. However, in Patent Document 3, neither a technique for improving the sensitivity of the optical sensor nor an oxide semiconductor technology is disclosed. Further, in Patent Document 3, wet etching is performed using an alkali aqueous solution containing an oxidizing agent to an alloy containing copper or copper.

However, as disclosed in Patent Document 3, it is difficult to perform wet etching so as not to damage the amorphous silicon constituting the field effect transistor (TFT). In addition, when dry etching is performed on an alloy containing copper or copper, contamination by copper ions is remarkable, and it is more difficult to perform dry etching so as not to damage the amorphous silicon. Further, in the dry etching at the time of formation of the channel layer of the amorphous silicon, there is a possibility that the channel portion may be contaminated, so that it has not been put into practical use in the copper wiring technology in the amorphous silicon semiconductor TFT process.

Japanese Patent Application Laid-Open No. 2009-129397 Japanese Patent Application Laid-Open No. 2013-008991 Japanese Unexamined Patent Application Publication No. 10-307303

SUMMARY OF THE INVENTION The present invention has been made in view of such conventional circumstances, and it is an object of the present invention to provide a liquid crystal display device having excellent sensitivity while using optical sensing.

In order to solve the above problems, some aspects of the present invention provide a liquid crystal display device as described below.

A liquid crystal display device according to a first aspect of the present invention is a liquid crystal display device having a first transparent substrate, an opposing substrate formed by stacking a black matrix and a transparent resin layer having at least a plurality of pixel openings on the first transparent substrate in this order, And an array substrate formed by arranging at least a photosensor, a plurality of active elements including an oxide semiconductor as a channel layer, a metal wiring, and a dummy pattern on the second transparent substrate, And a liquid crystal cell formed by joining the counter substrate and the array substrate so as to face each other with a liquid crystal layer interposed therebetween, wherein the black matrix has a transmittance of 50% or more in a detection wavelength range of light wavelengths of 680 nm to 800 nm And has a transmission characteristic that a transmittance becomes higher at a longer wavelength side than a wavelength at which the transmittance becomes 50% or more. The sensor has a sensitivity region including the detection wavelength region and is formed closer to the liquid crystal layer than the active element and overlaps with the black matrix when viewed from a plane from the counter substrate. At least the surface of the metal wiring and the dummy pattern is made of copper or a copper alloy and the metal wiring and the dummy pattern are formed so as to embed a region overlapping with the optical sensor when viewed from a plane from the counter substrate.

A liquid crystal display device according to a second aspect of the present invention is a liquid crystal display device having a first transparent substrate, a light shielding layer having at least a plurality of pixel openings on the first transparent substrate and shielding light in a visible region and an infrared region, A counter substrate which is formed by stacking a color filter, a black matrix, and a transparent resin layer in this order on a plurality of pixel apertures, each of which is provided with red, green and blue coloring pixels, and a second transparent substrate, And an array substrate on which at least an optical sensor, a plurality of active elements each including an oxide semiconductor as a channel layer, a metal wiring, and a dummy pattern are disposed on the second transparent substrate, and the counter substrate and the array substrate And a liquid crystal cell formed by joining the liquid crystal layer and the liquid crystal cell so as to face each other with the liquid crystal layer interposed therebetween, wherein the black matrix has a wavelength range of from 680 nm to 800 nm And has a transmittance of 50% or more and a transmittance higher than that of the wavelength at which the transmittance becomes 50% or more at a longer wavelength side, and overlaps with any one of the red layer, the green layer, and the blue layer . The sensor has a sensitivity region including the detection wavelength region and is formed closer to the liquid crystal layer than the active element and overlaps with the black matrix when viewed from a plane from the counter substrate. Wherein at least the surface of the metal wiring and the dummy pattern is made of copper or a copper alloy and the metal wiring and the dummy pattern are formed so as to fill a region overlapping with the optical sensor when viewed from a plane from the counter substrate.

A liquid crystal display device according to a third aspect of the present invention is a liquid crystal display device comprising a black matrix having a first transparent substrate and having at least a plurality of pixel openings on the first transparent substrate, 1. A color filter comprising: a color filter having a blue color layer and a blue color layer; a counter substrate having a transparent resin layer laminated in this order; and a second transparent substrate, A liquid crystal cell comprising a plurality of active elements each provided with a plurality of active elements as a channel layer, a metal wiring, and an array substrate in which dummy patterns are arranged, and the counter substrate and the array substrate are bonded to each other with the liquid crystal layer interposed therebetween And the black matrix has a transmittance of 50% or more in a detection wavelength region of light having a wavelength of 680 nm or more and 800 nm or less, and the transmittance is 50% or more, The green layer, and the blue layer, and has an overlapping portion overlapping any one of the red layer, the green layer, and the blue layer. The sensor has a sensitivity region including the detection wavelength region and is formed closer to the liquid crystal layer than the active element and overlaps with the black matrix when viewed from a plane from the counter substrate. Wherein at least the surface of the metal wiring and the dummy pattern is made of copper or a copper alloy and the metal wiring and the dummy pattern are formed so as to fill a region overlapping with the optical sensor when viewed from a plane from the counter substrate.

In the above-described liquid crystal display device of the present invention, it is preferable that the black matrix includes a plurality of organic pigments as a main coloring material.

In the liquid crystal display device of the above aspect of the present invention, the oxide semiconductor is preferably a composite metal oxide selected from two or more of gallium, indium, zinc, hafnium, tin, yttrium, titanium, germanium and silicon.

In the liquid crystal display device of the above aspect of the invention, it is preferable that the color filter include a position where the red layer and the black matrix overlap, a position where the green layer overlaps the black matrix, a position where the blue layer and the black matrix overlap It is preferable to have the overlapped portion at each of the positions where the above-mentioned overlapped portions are formed. It is preferable that the optical sensor is provided in a lower portion of each coloring pixel of the red layer, the green layer, and the blue layer and a lower portion of the overlapping portion in plan view.

It is preferable that the liquid crystal display device of the above aspect of the present invention further comprises a backlight unit provided on the side opposite to the counter substrate of the liquid crystal cell and emitting light in a wavelength range longer than at least 680 nm.

It is preferable that the liquid crystal display device of the above-described form of the present invention further comprises an optical sensor which is formed to overlap with the pixel opening when viewed in plan from the counter substrate and has a sensitivity region in at least a visible light region.

According to the liquid crystal display device of the present invention, it is possible to provide a liquid crystal display device having excellent sensitivity while using optical sensing.

1 is a graph showing the reflection characteristics of a metal according to wavelengths.
Fig. 2 is an enlarged cross-sectional view showing a principal portion of a liquid crystal display device according to a first embodiment of the present invention; Fig.
3 is a partial plan view showing a plurality of pixel openings of a liquid crystal display device according to a first embodiment of the present invention;
4 is a schematic cross-sectional view showing a liquid crystal display device according to a first embodiment of the present invention.
5 is a graph showing wavelength selective transmittance characteristics of a black matrix.
6 is a sectional view taken along line A-A 'in Fig.
7 is a partial plan view showing a plurality of pixel openings of a liquid crystal display device according to a second embodiment of the present invention;
8 is a schematic cross-sectional view showing a liquid crystal display device according to a second embodiment of the present invention.
Fig. 9 is an enlarged cross-sectional view showing a principal portion of a liquid crystal display device according to a second embodiment of the present invention; Fig.
10 is a graph showing the transmission characteristics of the green layer and the transmission characteristics of the green layer and the black matrix overlapping each other.
11 is a graph showing transmission characteristics in which the transmission characteristics of the red layer and the transmission characteristics of the red layer and the black matrix are overlapped.
12 is a graph showing the transmission characteristics of the blue layer and the transmission characteristics of the blue layer and the black matrix overlapping each other.
13 is a partial cross-sectional view of a liquid crystal display device according to a third embodiment.

Hereinafter, an embodiment of a liquid crystal display device according to the present invention will be described with reference to the drawings. In addition, the embodiments described below are intended to specifically illustrate the invention in order to better understand the spirit of the invention, and are not intended to limit the invention unless otherwise specified. It is to be noted that the drawings used in the following description are enlarged views of major parts for convenience of understanding the features of the present invention and it is to be noted that the dimensional ratios etc. of the respective components are the same as actual Can not.

In each embodiment, the same or substantially the same functions and components are denoted by the same reference numerals, and description thereof is omitted, or explanation is made only when necessary. In each of the embodiments, only the characteristic portions will be described, and a description of the portions which are not different from the constituent elements of the known liquid crystal display device will be omitted.

In each embodiment, the display unit of the liquid crystal display device will be described as a pixel. A pixel is a minimum display unit of a polygon having at least two parallel sides partitioned by a black matrix. In each of the embodiments, the pixel substantially agrees with the opening of the black matrix or the opening of the light-shielding layer. In each embodiment, various liquid crystal driving methods can be applied.

For example, it is possible to use an IPS system (in-plane switching system), a VA system (vertically aligned system using vertically aligned liquid crystal molecules), a hybrid-aligned nematic system (HAN) , Liquid crystal alignment method or liquid crystal driving method such as TN (Twisted Nematic), OCB (Optically Compensated Bend), CPA (Continuous Pinwheel Aligmentent), ECB (Electrically Controlled Birefringence) and TBA . The liquid crystal layer may contain a liquid crystal molecule having a positive dielectric constant anisotropy or a liquid crystal molecule having a negative dielectric anisotropy.

The rotational direction (operating direction) of the liquid crystal molecules upon application of the liquid crystal driving voltage may be parallel to the substrate surface or may be perpendicular to the plane of the substrate. The direction of the liquid crystal driving voltage applied to the liquid crystal molecules may be a horizontal direction, a two-dimensional or three-dimensional direction, an oblique direction, or a vertical direction.

As the semiconductors applicable to the optical sensors of the respective embodiments, an amorphous silicon semiconductor which has sensitivity from a visible region (for example, a wavelength of light 400 nm to 700 nm) to an infrared region, an amorphous silicon semiconductor which has a dominant A polycrystalline silicon semiconductor having sensitivity, a microcrystalline silicon semiconductor, a silicon germanium (SiGe) semiconductor, an oxide semiconductor typified by IGZO (registered trademark), and ITZO (registered trademark).

When these semiconductors are used, it is preferable to adjust the bandgap so as to give the sensitivity region of the photosensor to the intended wavelength region. In the SiGe semiconductor, the band gap can be changed continuously by the addition ratio of Ge, the light receiving wavelength of the light receiving element can be adjusted, and sensitivity in the infrared region can be given. And a SiGe semiconductor having a concentration gradient of Ge. For example, by using semiconductor compounds such as GaAs, InGaAs, PbS, PbSe, SiGe and SiGeC, an optical sensor suitable for the detection of infrared light can be formed.

A liquid crystal display device incorporating an optical sensor is susceptible to influence of temperature and backlight unit. Compensation of the optical sensor may be required in order to prevent an input malfunction of a finger or a laser due to a backlight unit or noise caused by external light. When a silicon photodiode having a channel layer formed of polysilicon or amorphous silicon is used as the optical sensor, a dark current is generated in accordance with a change in the environmental temperature and the like, and noise other than observation light may be applied to the observation data .

As a switching element for driving the liquid crystal layer or the optical sensor, a field effect transistor (active element, TFT) having an oxide semiconductor as a channel layer can be employed. The oxide semiconductor is an oxide semiconductor containing at least two oxides of indium, gallium, tin, zinc, hafnium, yttrium, titanium, germanium and silicon. As this oxide semiconductor, a composite metal oxide of indium, gallium, and zinc called IGZO can be mentioned. The channel layer formed of an oxide semiconductor may be either an amorphous or a crystallized material, but it is preferable to use a crystallized material from the viewpoint of stability of electrical characteristics (for example, Vth) of the transistor. The thickness of the channel layer of the oxide semiconductor is preferably about 2 nm to 80 nm, for example.

The metal wiring of the array substrate having such a TFT can be a metal wiring of at least two layers using copper or a copper alloy as a surface layer. The metal wiring may be a copper alloy to which, for example, an element selected from magnesium, titanium, nickel, molybdenum, indium, tin, zinc, aluminum, calcium and the like is added to copper. The element added to copper is not limited to the above element, and the amount added to copper is preferably 3 atomic percent or less with respect to the atomic percentage of copper. If it is less than 1 atomic percent, the light reflectance of the metal wiring is not significantly lowered, and a high light reflectance can be ensured. It is more preferable that the addition amount is 1 atomic percent or less.

Here, the surface layer of the metal wiring means a metal layer (first metal layer) in the liquid crystal layer side (position near the liquid crystal layer, near the optical sensor side, near the optical sensor) when viewed from the cross section along the thickness direction of the array substrate Point. For the surface copper or copper alloy, the underlying metal layer (second metal layer) is located on the array substrate side (near the array substrate).

As the second metal layer, a refractory metal such as titanium, molybdenum, tantalum, tungsten, or the like or an alloy including these materials can be preferably employed. A titanium alloy whose etching rate is close to copper or a copper alloy of the first metal layer can be selected as the second metal layer. It is preferable that the film thickness of the copper or copper alloy and the film thickness of the second metal layer are formed to be, for example, in the range of 50 nm to 500 nm, respectively.

The method of forming the first metal layer and the second metal layer using an oxide semiconductor layer, copper or copper alloy as a surface layer is not limited, but vacuum film formation by sputtering is preferable from the viewpoint of production efficiency. The metal wiring composed of the first metal layer and the second metal layer can be efficiently formed on the large-area transparent substrate with a high throughput by the sputtering (sputtering) film forming apparatus. The first metal layer made of copper or a copper alloy on the oxide semiconductor can be selectively etched with, for example, an oxidative alkaline etchant to form a pattern as a metal wiring without damaging the oxide semiconductor. A metal wiring and a metal layer using copper or a copper alloy which is difficult in a transistor of a silicon-based semiconductor as a surface layer can be easily processed, and a transistor element can be formed.

As shown in Fig. 1, for example, the first metal layer made of copper or a copper alloy exhibits a high reflectance at a long wavelength side of light, particularly at least 600 nm. As shown in Fig. 2, by forming a metal wiring so as to overlap (fill the lower portion) with the first photosensor S1 and the second photosensor S2, it is possible to receive light directly incident and reflected light reflected from the metal wiring Receiving sensitivity of the first photosensor S1 and the second photosensor S2 can be improved. In the embodiment shown in Fig. 2, the transistor including the channel layer 26 of the oxide semiconductor is shown as the bottom gate structure, but it is not limited to the bottom gate structure. For example, a transistor such as a top gate structure, a double gate structure, or a dual gate structure may be employed.

≪ First Embodiment >

The liquid crystal display device of the first embodiment assumes a liquid crystal display device including a backlight unit including, for example, a red-emitting LED, a green-emitting LED, and a blue-emitting LED when color display is performed. When color display is not performed, an LED or fluorescent light of white light emission may be used as a backlight unit.

3 is a partial plan view showing a plurality of pixel openings of a liquid crystal display device according to an embodiment of the present invention. Although Fig. 3 shows only eight pixels, it is actually a part of the display surface of a liquid crystal display device in which a large number of pixels, for example, 1,280 pixels in the X direction and 768 pixels in the Y direction are arranged.

A plurality of pixels P, P ... Is partitioned by the pixel opening portion 20 formed in the black matrix 2. The optical sensor comprises a first optical sensor (optical sensor) S1 and a second optical sensor S2, which are arranged in the pixel P, respectively. As a structure in which the first photosensor S1 and the second photosensor S2 are arranged, there is a structure in which a pair of photosensors are provided for a plurality of pixels, that is, a structure in which a pair of photosensors are not provided for all the pixels, A pair of photosensors may be arranged in a selected one pixel (thinning arrangement).

The first photosensor S1 is disposed at a position covered by the black matrix 2 (a position overlapping the black matrix 2). On the other hand, the second photosensor S2 is disposed in the pixel opening 20 so that incident light enters the inside from the outside of the display surface. The first photosensor S1 and the second photosensor S2 do not necessarily have to be arranged in the same pixel P but it is also possible to arrange the first photosensor S1 and the second photosensor S2 close to each other desirable.

In this embodiment, by subtracting the light receiving data of the first photosensor S1 from the light receiving data of the second photosensor S2, the light receiving data of the visible region excluding the infrared region can be extracted. In this subtraction, for example, the dark currents of the first photosensor S1 and the second photosensor S2 can be subtracted from each other, so that light reception data with high accuracy can be obtained.

4 is a schematic cross-sectional view showing the liquid crystal display device 400 having the backlight unit 13 on the rear side (near the back side) of the array substrate 300. As shown in FIG. A polarizing plate 15 is provided as an optical control element on the front and back surfaces of the liquid crystal cell 200 and a first photosensor S1 and a second photosensor S2 are disposed below the liquid crystal layer 6. [ For example, a pointer such as the finger 16 of the observer reflects the light 18 emitted from the backlight unit 13 and is received by the first photosensor S1 or the second photosensor S2 as incident light 19 . The incident light 19 is not limited to the reflected light from the pointer such as the finger 16, and may be incident light from, for example, a laser pointer. A part of the incident light 19 is reflected by the metal wiring 24 arranged to embed the lower part of the first photosensor S1 and is received by the first photosensor S1. As a result, the detection sensitivity of the incident light 19 is increased. The backlight unit 13 includes, for example, a red light emitting LED, a green light emitting LED, a blue light emitting LED, and an infrared light emitting LED as the light source 14.

2 is a cross-sectional view showing a cross section taken along the line B-B 'in Fig.

A dummy pattern 25 made of a metal layer is disposed under the first photosensor S1 at portions where the metal lines 24 or the metal lines 24 constituting the source line or the drain line are not formed. For example, the dummy pattern 25 can be simultaneously formed on the same layer as the gate line in the manufacturing process. Although not shown in FIG. 2, a dummy pattern 25 made of a metal layer is formed on a lower portion of the second photosensor S2 at a portion where a metal wiring 24 such as a source line or a drain line, or a metal wiring 24 is not formed Respectively.

The first photosensor S1 and the second photosensor S2 (not shown) are sequentially arranged in the direction from the position close to the liquid crystal layer 6 to the amorphous silicon 35, the intrinsic semiconductor I Type amorphous silicon 36 and an N-type amorphous silicon 37 are stacked. For example, amorphous silicon 35, which is a p-type semiconductor, has a thickness of 5 nm to 50 nm, amorphous silicon 36, which is an I-type semiconductor, has a thickness of 100 nm to 1000 nm, and amorphous silicon 37 can be formed with a film thickness of 20 nm to 200 nm.

An upper electrode 21 and a lower electrode 22 functioning as a light-transmitting conductive film (transparent conductive film) are formed on the upper surface of the amorphous silicon 35 which is a p-type semiconductor and the lower surface of the amorphous silicon 37 which is an n- Respectively. The transparent conductive film is formed of, for example, a conductive metal oxide called ITO (Indium Tin Oxide). The upper electrode 21 may be, for example, a zigzag fine line pattern, a comb-like fine line pattern, or the like. By devising the pattern shape of the upper electrode 21, the collecting effect by the lower electrode 22 can be enhanced.

For improving the sensitivity on the first photosensor S1 or the second photosensor S2, a columnar structure, an uneven structure, a quantum dot, or the like may be laminated with, for example, a transparent resin. It is also preferable to add particles or dyes having a wavelength conversion function to these structures. The formation positions of the P-type semiconductor and the N-type semiconductor may be switched or arranged in the horizontal direction. The amorphous silicon may be made of microcrystalline silicon.

As shown in the figure, the first photosensor S1 and the second photosensor S2 are formed on a substrate on which a transistor made of an oxide semiconductor is formed in advance, for example, by using a known amorphous silicon semiconductor process.

The first photosensor S1 is electrically connected to the electrodes of the transistor through the contact hole 23 and the metal wiring 24 from the lower electrode 22. [ The upper electrode 21 of the first photosensor S1 is connected to the common electrode wiring through a contact hole (not shown). Thereby, when the reset signal is given, the potential of the first photosensor S1 can be set to the common potential. The insulating layer 33 is formed of, for example, silicon oxide, silicon oxynitride, aluminum oxide, mixed oxide containing these materials, or photosensitive acrylic resin capable of alkali development. A second optical sensor S2 (not shown in Fig. 2) can be formed similarly to the first optical sensor S1.

A plurality of transistors may be disposed under the first photosensor S1 or the second photosensor S2 to drive the first photosensor S1 and the second photosensor S2. The plurality of transistors made of oxide semiconductors can be used for, for example, selection transistors, amplifying transistors, reset transistors, or liquid crystal driving transistors of the first photosensor S1 and the second photosensor S2. When the capacities of the first photosensor S1 and the second photosensor S2 are small, the capacitors can be supplementarily arranged.

As shown in Fig. 1, the reflectance of copper or copper alloy constituting the metal wiring 24 exhibits a high reflectance on the long wavelength side of light, particularly 600 nm or more. 2, a pattern of the metal wiring 24 is formed in a region where the lower portion of the first photosensor S1 or the second photosensor S2 is buried, that is, in a region overlapping the first photosensor S1 or the second photosensor S2 The reflected light reflected by the metal wiring 24 can be received by the first photosensor S1 and the second photosensor S2. This makes it possible to improve the light-receiving efficiency of the first photosensor S1 and the second photosensor S2.

The black matrix 2 in the present embodiment has a transmittance of 50% or more in a detection wavelength region of 680 nm to 800 nm, as indicated by the line BLK1 showing the wavelength selective transmission characteristic in Fig. 5, and the transmittance Has a transmittance higher than that of a wavelength of 50% or higher on the longer wavelength side, and transmits light in the infrared region without substantially transmitting visible light. The half value wavelength of the black matrix 2 can be adjusted in a range of about 680 nm to 800 nm by selecting or combining organic pigment species. The half-value wavelength is defined here as the wavelength of light having a transmittance of 50%. The material composition of the black matrix 2 will be described later in detail.

Fig. 6 is a cross-sectional view taken along the line A-A 'in Fig. 3, illustrating a configuration as a liquid crystal display device. Further, illustration of the driving transistor, the polarizing plate, the alignment film, etc. of the liquid crystal layer is omitted.

The liquid crystal molecules of the liquid crystal layer 6 in Fig. 6 have an initial alignment that is horizontal on one side of the array substrate 300 and are rotated on the surface with a voltage applied between the pixel electrode 31 and the common electrode 32 And performs display by controlling the transmittance of light emitted from the backlight unit. The dielectric anisotropy of the liquid crystal molecules may be positive or negative. A transparent electrode such as ITO is not formed on the transparent resin layer 12 (first transparent resin layer) of the counter substrate 100. [ The alignment film on the transparent resin layer 12 is not shown.

≪ Second Embodiment >

7 and 8, a red layer R, a green layer G, a blue layer B (blue) are formed at positions corresponding to the pixel openings 20 formed in the black matrix 2 of the liquid crystal display device, (FIG. 7 and FIG. 8 are enlarged views of the green layer G). The first photosensor S1 and the second photosensor S2 are formed in each of the plurality of pixels as in the first embodiment. The liquid crystal molecules of the liquid crystal layer 6 are liquid crystals whose initial alignment is vertical and are driven by a voltage applied between the counter electrode (common electrode) 52 and the pixel electrode 51, Falls, and transmits light. The polarizing plate is set to cross-Nicolono far off.

8 is a cross-sectional view taken along the line C-C 'in Fig. The light shielding layer 3 is arranged in a predetermined pattern in substantially the same shape as the black matrix 2 and the second transparent resin layer 4 is formed on the color filter. The formation of the second transparent resin layer may be omitted.

For example, the light-shielding layer 3 is formed by using light-shielding carbon as a color material, and does not substantially transmit visible light and infrared light. The black matrix 2 has a characteristic of transmitting the visible region mixed with a plurality of organic pigments similar to those of the first embodiment, and transmitting the infrared region substantially.

The black matrix 2 according to the embodiment of the present invention has a wavelength (half-wavelength) of 50% transmittance in a range of about 680 nm to 800 nm, which is represented by lines BLK1 and BLK2 showing wavelength selective transmission characteristics in Fig. Can be set. This adjustment of the half wavelength can be achieved by adjusting the combination of organic pigments, the pigment ratio, or the film thickness of the black matrix 2.

The black matrix 2 of the present embodiment has a structure in which overlapping portions overlapping the color filter (the green layer G in Fig. 9) are formed in a patternless region of the light-shielding layer 3 and the metal wiring 24, . 9 is a cross-sectional view taken along the line D-D 'in FIG.

10 is a graph showing an example of the transmission characteristic GLBLK in which the transmission characteristic GL of the pattern of the green layer G, the pattern of the green layer G, and the transmission characteristic BLK1 of the black matrix 2 (see Figs. 5 and 9) are superimposed. The transmission characteristic GL corresponds to the light reception data of the second photosensor S2 shown in Fig. The transmission characteristic GLBLK corresponds to the light reception data of the first photosensor S1 shown in Fig.

The high-precision green detection data of the visible light region is obtained by subtracting detection data of light detected by optically superimposing the pattern of the green layer G on the black matrix 2 from the detection data of light detected by the pattern of the green layer G Loses. The processing of these data is performed in the processing section 34, and only the detection data of green in the visible light region can be extracted.

11 is a graph showing an example of the transmission characteristic RLBLK in which the transmission characteristic RL of the pattern of the red layer R, the pattern of the red layer R, and the transmission characteristic BLK1 of the black matrix 2 (see Figs. 5 and 9) are superimposed. The transmission characteristic RL corresponds to the light reception data of the second photosensor S2 shown in Fig. The transmission characteristic RLBLK corresponds to the light reception data of the first photosensor S1 shown in Fig.

The high-precision red detection data of the visible light region is obtained by subtracting detection data of light detected by optically overlapping the pattern of the red layer R with the pattern of the red layer R from the detection data of light detected via the pattern of the red layer R Loses. The arithmetic processing of these data is performed in the processing section 34, and only the red detection data of the visible light region can be extracted.

12 is a graph showing an example of the transmission characteristic BLBL of the pattern of the blue layer B, the pattern of the blue layer B, and the transmission characteristic BLK1 of the black matrix 2 superimposed on each other. The transmission characteristic BL corresponds to the light reception data of the second photosensor S2 shown in Fig. The transmission characteristic BLBLK corresponds to the light reception data of the first photosensor S1 shown in Fig.

The high-precision blue detection data of the visible light region is obtained by subtracting the detection data of light detected by optically overlapping the pattern of the blue layer B with the pattern of the blue layer B from the detection data of light detected via the pattern of the blue layer B Loses. The processing of these data is performed in the processing section 34, and only the blue detection data of the visible light region can be extracted.

The subtraction of the first light reception data between the first light sensor S1 and the second light sensor S2 can compensate for the dark current due to the above-described change in the ambient temperature during the calculation, and therefore, . If the incident light is external light such as solar light or external light such as a dark room, it is also possible to feed back the received light data to the luminance adjustment of the liquid crystal display device in accordance with the respective light receiving conditions.

In the case of obtaining the light-receiving data only in the near-infrared region, for example, from 680 nm to 800 nm, for example, the pattern of the red layer R and the black matrix 2 The light receiving data of the first photosensor S1 located at the lower portion of the overlapped portion in which the pattern of the blue layer B and the black matrix 2 overlap is subtracted from the light receiving data of the first photosensor S1. Thus, light receiving data between 680 nm and 800 nm can be extracted. At this time, the compensation of the dark current can also be performed at the same time.

In Fig. 9, the backlight unit (not shown) may be provided with solid-state light-emitting devices (LEDs) emitting red, green, and blue light. For example, time division (field sequential) light emission of the red LED, the green LED, and the blue LED is synchronously controlled with the liquid crystal of the pixel portion. Thus, full-color display can be performed. In addition to the red LED, the green LED and the blue LED, it is possible to irradiate the infrared ray emitted from the infrared ray emitting LED to a pointer such as a finger by applying the infrared ray emitting LED, and such a structure can be used for the touch sensing purpose.

The first photosensor S1 can be applied to the sensing of infrared light reception. The first light sensor S1 and the second light sensor S2 can be applied to color copying, personal authentication, or the like when the light of red, green, and blue is also used and reflected in the light receiving data. For example, the liquid crystal display device having the substrate for a liquid crystal display according to the embodiment of the present invention can be applied to a personal authentication system such as recognition of a finger by high precision of 300 ppi or more.

When a silicon photodiode is used for the optical sensor of the liquid crystal display device according to the embodiment of the present invention, a PIN diode may be used, or a PN diode may be used. In the case of the PIN diode, the arrangement of the P-type region / the intrinsic region / the N-type region may be arranged in the horizontal direction of the surface of the transparent substrate, or may be arranged in the vertical direction of the surface of the transparent substrate.

As described above, the position where the black matrix 2 and the pattern of the red layer R overlap each other, the position where the pattern of the black matrix 2 overlaps the pattern of the green layer G, the position where the black matrix 2 ) And the pattern of the blue layer B are superimposed on each other, high-precision color separation becomes possible.

In a liquid crystal display device provided with a substrate for a display device according to an embodiment of the present invention, for example, color copying, color imaging, utilization as a motion sensor, touch sensing using an infrared region, and optical communication can be performed.

Further, since the transmissivity of the near infrared region of each of the light shielding layer 3 and the black matrix 2 is different, alignment in the manufacturing process (position alignment) can be performed by light having a wavelength of 800 nm, for example. The formation pattern of the light-shielding layer 3 of the present embodiment can be used as a frame portion having high light-shielding properties surrounding four surrounding sides including a plurality of openings. A mark for alignment in the light shielding layer 3 may be formed on the transparent substrate in advance.

≪ Third Embodiment >

The third embodiment is an embodiment of the present invention in which the black matrix 2 is formed prior to the formation of the red layer R pattern, the green layer G pattern, and the blue layer B pattern.

13 is a partial cross-sectional view of the liquid crystal display device of the third embodiment.

The liquid crystal molecules of the liquid crystal layer 6 of the third embodiment are liquid crystals whose initial orientation is vertical and are driven by a voltage applied between the counter electrode (common electrode) 52 and the pixel electrode 51, The light is transmitted in the horizontal direction. The polarizing plate is set to cross-Nicolono far off.

In the case of aiming at touch sensing using an infrared region without the purpose of color separation, the arrangement of the second photosensor S2 can be omitted. In the case of the touch sensing using the near-infrared range, only the overlapping portion in which the pattern of the red layer R, the pattern of the green layer G, the pattern of the blue layer B and the black matrix 2 overlap is overlapped with the first optical sensor S1 . The first photosensor S1 can be formed at various densities, for example, in the form of one pixel for one pixel, or one pixel for three pixels and one pixel for six pixels.

<Examples of constituent materials>

Hereinafter, examples of constituent materials in the respective members of the liquid crystal device shown in each of the above-described embodiments will be described.

(Transparent resin)

The photosensitive coloring composition used for forming the color filter composed of the black matrix 2, the light-shielding layer 3 and the pixel pattern of the red layer R, the green layer G and the blue layer B includes a pigment dispersion (hereinafter referred to as a paste) A polyfunctional monomer, a photosensitive resin or a non-photosensitive resin, a polymerization initiator, a solvent and the like. For example, the organic resin having high transparency such as the photosensitive resin and the non-photosensitive resin used in the present embodiment is generically referred to as a transparent resin.

As the transparent resin, a thermoplastic resin, a thermosetting resin, or a photosensitive resin can be used. Examples of the thermoplastic resin include butyral resin, styrene-maleic acid copolymer, chlorinated polyethylene, chlorinated polypropylene, polyvinyl chloride, vinyl chloride-vinyl acetate copolymer, polyvinyl acetate, polyurethane resin, polyester resin, , An alkyd resin, a polystyrene resin, a polyamide resin, a rubber resin, a cyclic rubber resin, a cellulose, a polybutadiene, a polyethylene, a polypropylene and a polyimide resin. As the thermosetting resin, for example, epoxy resin, benzoguanamine resin, rosin-modified maleic resin, rosin-modified fumaric acid resin, melamine resin, urea resin, phenol resin and the like can be used. The thermosetting resin may be produced by reacting a melamine resin with a compound containing an isocyanate group.

(Alkali-soluble resin)

In order to form the light-shielding layer 3 and the black matrix 2, the first transparent resin layer 12, the second transparent resin layer 11, and the color filter according to the present embodiment, It is preferable to use a resin composition. These transparent resins are preferably resins that have been imparted with alkali solubility. As the alkali-soluble resin, a resin containing a carboxyl group or a hydroxyl group may be used, or another resin may be used. As the alkali-soluble resin, for example, an epoxy acrylate resin, a novolac resin, a polyvinyl phenol resin, an acrylic resin, a carboxyl group-containing epoxy resin, and a carboxyl group-containing urethane resin can be used. Among these resins, an epoxyacrylate resin, a novolac resin, and an acrylic resin are preferably used as the alkali-soluble resin, and an epoxyacrylate resin or a novolak resin is particularly preferable.

(Acrylic resin)

As a representative of the transparent resin that can be used in the present embodiment, the following acrylic resins are exemplified.

Examples of the acrylic resin include monomers such as (meth) acrylic acid; (Meth) acrylate, ethyl (meth) acrylate, propyl (meth) acrylate, butyl (meth) acrylate, t- (Meth) acrylate; Hydroxyl group-containing (meth) acrylates such as hydroxyethyl (meth) acrylate and hydroxypropyl (meth) acrylate; Ether group-containing (meth) acrylates such as ethoxyethyl (meth) acrylate and glycidyl (meth) acrylate; And alicyclic (meth) acrylates such as cyclohexyl (meth) acrylate, isobornyl (meth) acrylate and dicyclopentenyl (meth) acrylate.

In addition, these exemplified monomers may be used alone or in combination of two or more.

The acrylic resin may be produced using a copolymer including a compound such as styrene, cyclohexylmaleimide, or phenylmaleimide copolymerizable with a monomer of these materials. In addition, by reacting a copolymer obtained by copolymerizing a carboxylic acid having an ethylenic unsaturated group such as (meth) acrylic acid with a compound containing an epoxy group and an unsaturated double bond such as glycidyl methacrylate, , And an acrylic resin may be obtained. For example, a polymer of an epoxy group-containing (meth) acrylate such as glycidyl methacrylate, or a copolymer of this polymer and other (meth) acrylate is mixed with a carboxylic acid-containing compound such as (meth) To produce a photosensitive resin, which may be an acrylic resin.

(Organic pigment)

As the red pigment, for example, C.I. Pigment Red 7, 9, 14, 41, 48: 1, 48: 2, 48: 3, 48: 4, 81: 1, 81: 2, 81: 226, 227, 228, 240, 242, 246, 254, 252, 254, 255, 264, 272, 279, and the like can be used.

As the yellow pigment, for example, C.I. Pigment Yellow 1, 2, 3, 4, 5, 6, 10,12, 13,14,15,16,17,18,20,24,31,32,34,35,35: 1, 37, 37: 1, 40, 42, 43, 53, 55, 60, 61, 62, 63, 65, 73, 74, 77, 81, 83, 86, 93, 94, 95, 100, 101, 104, 106, 108, 109, 110, 113, 114, 115, 116, 117, 118, 119, 120, 123, 125, 126, 127, 128, 129, 137, 138, 146, 147, 148, 150, 151, 152, 153, 154, 155, 156, 161, 162, 164, 166, 167, 168, 169, 170, 171, 172, 173, 174, 175, 176, 177, 179, 180, 181, 182, 185, 187, 188, 193, 194, 199, 213,

As the blue pigment, for example, C.I. Pigment Blue 15, 15: 1, 15: 2, 15: 3, 15: 4, 15: 6, 16, 22, 60, 64, Also, C.I. In Pigment Blue 15: 3, the half wavelength in the infrared region is near 760 nm. For example, C.I. The half value wavelength of the black matrix 2 can be adjusted to a longer wavelength side than, for example, 680 nm by adding a small amount of pigment in the wavelength range of 700 nm to 800 nm having a half wavelength such as pigment of Pigment Blue 15: 3.

As the violet pigment, for example, C.I. Pigment Violet 1, 19, 23, 27, 29, 30, 32, 37, 40, 42, 50 and the like. Among these pigments, C.I. Pigment Violet 23 is preferred.

As the green pigment, for example, C.I. Pigment Green 1, 2, 4, 7, 8, 10, 13, 14, 15, 17, 18, 19, 26, 36, 45, 48, 50, 51, 54, 55, 58, Among pigments, halogenated zinc phthalocyanine green pigment CI Pigment Green 58 is preferred. As the green pigment, a halogenated aluminum phthalocyanine pigment may be used.

(Coloring materials of the light-shielding layer and the black matrix)

The light-shielding color material contained in the light-shielding layer 3 and the black matrix 2 is a coloring material having a light-absorbing function in a visible light wavelength region and having a light-shielding function. In the present embodiment, for example, organic pigments, inorganic pigments, dyes and the like can be used for the light-shielding coloring material. The coloring material of the black matrix 2 which emphasizes the infrared region transmittance of light is preferably composed mainly of an organic pigment. As the coloring material of the light-shielding layer 3, for example, carbon black, titanium oxide or the like can be used. Examples of the dyes that can be contained in the light-shielding layer 3 and the black matrix 2 include azo dyes, anthraquinone dyes, phthalocyanine dyes, quinoneimine dyes, quinoline dyes, nitro dyes, A neil dye, a methine dye and the like can be used. For the organic pigment, for example, the above organic pigment may be applied. These light-shielding color materials may be used alone or in combination of two or more kinds in a suitable ratio.

For example, the visible light wavelength region is in the range of a weak light wavelength of 400 nm to 700 nm.

The wavelength at which the transmittance of the black matrix 2 according to the present embodiment is raised is in the range from the weak light wavelength 680 nm to the light wavelength 800 nm. Here, at the weak light wavelength of 680 nm, the transmittance of the red layer is kept high. The light wavelength of 800 nm is a rising portion where the transmittance of the blue layer is increased.

(Example of black resist applied to the light-shielding layer)

An example of production of a black paste (dispersion) used in the light-shielding layer will be described.

A mixture of the following composition is uniformly mixed and stirred, and stirred with a bead mill disperser to prepare a black paste. Each composition is expressed in parts by mass.

20 parts of carbon pigment

Dispersant 8.3 parts

Copper phthalocyanine derivative 1.0 part

Propylene glycol monomethyl ether acetate 71 parts

Using the black paste, the mixture of the following composition is stirred and mixed so as to be uniform, and filtered with a filter of 5 탆 to prepare a black resist to be applied to the frame portion 1. In the present embodiment, a resist refers to a photosensitive coloring composition containing carbon or a pigment.

Black paste 25.2 parts

Acrylic resin solution 18 parts

Dipentaerythritol penta and hexaacrylate 5.2 parts

Photopolymerization initiator 1.2 part

Increase / decrease 0.3 part

Leveling Part 0.1

25 parts of cyclohexanone

Propylene glycol monomethyl ether acetate 25 parts

In the present embodiment and each of the above embodiments, the main color material in the black resist or the color resist means a color material occupying 50% or more of the total mass ratio (%) of the color material contained in the resist. For example, in a black resist, carbon accounts for 100% of the color material, and carbon becomes the main color material. In order to adjust the color tone or the reflection color of the black resist using carbon as a main color material, an organic pigment such as red, yellow, or blue may be added to aim at 10% or less of the total mass ratio.

(Example of black resist used for black matrix)

Examples of the mixing of the organic pigments used in the black matrix 2 are shown below.

C.I. Pigment Red 254 (hereinafter abbreviated as R254)

C.I. Pigment Yellow 185 (hereinafter abbreviated as Y185)

C. I. Pigment Violet 23 (hereinafter abbreviated as V23)

Of these three pigments, either of Y139 or R254 may be excluded. In addition to these three kinds of pigments, a small amount of another kind of pigment such as the above organic pigment may be added in a small amount of 30% by mass or less for adjusting the color (transmission wavelength). For example, a zinc phthalocyanine halide pigment, a halogenated copper phthalocyanine pigment, a halogenated aluminum phthalocyanine pigment, or CI Pigment Blue 15: 3 may be added to 30 (for adjusting the spectral curve shape) % Or less by mass.

The transmittance of the black matrix 2 in the visible region is preferably 5% or less. The visible region usually has a weak light wavelength of 400 nm to 700 nm. In order to set the half wavelength of the black matrix 2 in the range of the light wavelength of 670 nm to 750 nm, it is necessary to increase the infrared transmittance characteristic from the vicinity of the weak light wavelength of 660 nm and to increase the transmittance characteristic on the long wavelength side. The wavelength range of the low transmittance of the black matrix 2 may be in the range of a weak light wavelength of 400 nm to 650 nm. In order to lower the transmittance of the black matrix 2 to 5% or less in the range of about 400 nm to 650 nm at a weak light wavelength, it is preferable to increase the amount of the pigment contained in the organic pigment light- It is extremely easy to realize it.

Similarly, the wavelength position of the half-wavelength can be easily adjusted based on the amount of the pigment, the purple pigment, the green pigment, the yellow pigment, the red pigment, the composition ratio of the blue pigment, and the thickness of the black matrix 2 described below. As the green pigment to be applied to the black matrix 2, various green pigments described later can be applied. In order to set the half wavelength of the black matrix 2 in the range of 680 nm to 800 nm of the wavelength of light, an increase in the infrared transmittance (for example, a half wavelength) of the green pigment or the blue pigment ranges from 680 nm to 800 nm Is preferred. The adjustment for setting the half-wavelength to a wavelength in the range of 680 nm to 800 nm is realized mainly on the basis of a purple pigment and a green pigment. In order to control the spectral characteristics of the black matrix 2, a blue pigment may be added. When the above-mentioned blue pigment is used in place of the purple pigment of the mixed example of organic pigments described above, the half wavelength can be adjusted to about 800 nm.

The mass ratio (%) of R254 may be in the range of, for example, 15 to 40%.

The mass ratio (%) of Y185 may be in the range of, for example, 10 to 30%.

The mass ratio (%) of V23 may be in the range of, for example, 75 to 30%.

By further adding the above-mentioned green pigment or blue pigment, the mass ratio of V23 in the whole pigment can be lowered.

The violet pigment of V23 is added to the black matrix 2 at any value in the range of 75 to 30% at the film thickness of the black matrix 2, for example, about 1 mu m. Thereby, the black matrix 2 has a half wavelength at the longer wavelength side than the light wavelength 670 nm. The transmittance of the black matrix 2 at a wavelength of 400 nm to 660 nm of the black matrix 2 is sufficiently lowered by adding 15 to 40% of a red organic pigment and adding the yellow organic pigment in an amount of 10 to 30% . (To prevent the transmittance of the black matrix 2 from slightly increasing from the baseline of the transmittance of 0% in the spectral characteristics) to prevent the transmittance of the organic pigment shading layer from slightly increasing in the wavelength range of 400 nm to 660 nm , Accurate color separation can be performed by subtracting the light reception data of the second photosensor S2 from the light reception data of the first photosensor S1. The half wavelength or the transmittance of the black matrix 2 can be adjusted by the film thickness of the black matrix 2.

Normally, before a color resist (coloring composition) is produced based on these pigments, the pigment is dispersed in a resin or a solution, and a pigment paste (dispersion) is produced. For example, in order to disperse the pigment Y185 solids in a resin or a solution, the following materials are mixed with 7 parts (parts by mass) of the pigment Y185.

Acrylic resin solution (solid content 20%) 40 parts

0.5 parts dispersant

Cyclohexanone 23.0 parts

Also, for other pigments such as V23, R254 and the like, a black pigment dispersion paste may be produced by dispersing in the same resin or solution.

Hereinafter, a composition ratio for producing a black resist on the basis of the pigment dispersion paste will be exemplified.

Y139 paste 14.70 parts

V23 paste 20.60 parts

Acrylic resin solution 14.00 parts

Acrylic monomer 4.15 parts

Initiator 0.7 part

Increase / decrease 0.4 part

Cyclohexanone 27.00 parts

PGMAC 10.89 part

The black resist used for the black matrix 2 is formed by the composition ratio.

The black resist which is the main color material of the pigment used for forming the black matrix 2 is a violet pigment V23 which occupies about 58% of the total mass ratio. Most of the organic pigments have a higher transmittance in the longer wavelength region than the weak light wavelength 800 nm. The yellow pigment Y139 is also an organic pigment having a high transmittance in a long wavelength region than the wavelength of 800 nm.

For example, the main color material of the black resist may be an organic pigment of 100%. Alternatively, in a black resist using an organic pigment as a main color material, carbon may be added to aim at not more than 40% of the total mass in order to adjust the light shielding property.

The colored resist containing the black resist described above can be applied on a transparent substrate and pattern-formed by a well-known photolithography process. Alternatively, a pattern can be formed by a dry etching method using, for example, a novolac-based photosensitive resist.

In a black resist using carbon as a main pigment, alignment marks are formed in alignment with frame portions, and alignment can be performed after application of the black resist using the alignment marks. As shown in Fig. 5, the alignment mark can be recognized by using an infrared camera or the like, for example, using the difference in transmittance at a wavelength of 850 nm.

The liquid crystal display device according to the embodiment of the present invention can be applied in various applications. Examples of the electronic apparatuses to which the liquid crystal display device of the present invention can be applied include portable telephones, portable game devices, portable information terminals, personal computers, electronic books, video cameras, digital still cameras, head mount displays, A copying machine, a facsimile, a printer, a multifunctional printer, a vending machine, an ATM, a personal authentication device, and an optical communication device.

2 Black Matrix
3 light-shielding layer
411 Second transparent resin layer
6 liquid crystal layer
10 First transparent substrate
12 First transparent resin layer (transparent resin layer)
13 Backlight Unit
14 light source
15 polarizer
16 pointers
20 opening (pixel opening)
21 upper electrode
22 Lower electrode
24 metal wiring
25 Dummy pattern (metal layer)
30 second transparent substrate
33 insulating layer
34 Processor
353637 Amorphous silicon
3151 pixel electrode
32 common electrode
52 counter electrode (common electrode)
100 Substrate for display device (opposing substrate)
200 liquid crystal cell
300 array substrate
400 liquid crystal display
R red layer
G green layer
B blue layer
S1 1st optical sensor
S2 second optical sensor

Claims (8)

A counter substrate which has a first transparent substrate and on which a black matrix having at least a plurality of pixel openings and a transparent resin layer are stacked in this order on the first transparent substrate,
And a second transparent substrate, wherein at least an optical sensor, a plurality of active elements each including an oxide semiconductor as a channel layer, a metal wiring, and an array substrate
And a liquid crystal cell formed by bonding the counter substrate and the array substrate so as to face each other with the liquid crystal layer interposed therebetween,
The black matrix has a transmittance of 50% or more in a detection wavelength range of light having a wavelength of 680 to 800 nm and a transmittance higher than a wavelength at which the transmittance is 50% or more,
The optical sensor includes:
And having a sensitivity region including the detection wavelength region,
Wherein the active matrix substrate is positioned closer to the liquid crystal layer than the active element and overlaps with the black matrix when viewed from a plane from the counter substrate,
Wherein at least the surface layer of the metal wiring and the dummy pattern is made of copper or a copper alloy,
Wherein the metal wiring and the dummy pattern are formed in an area overlapping with the optical sensor at a lower portion of the optical sensor when viewed in plan from the counter substrate. A light shielding layer having a first transparent substrate and having at least a plurality of pixel openings and shielding light in a visible light region and an infrared region on the first transparent substrate; A color filter comprising a coloring pixel of a layer, a black matrix, and a transparent resin layer in this order,
And a second transparent substrate, wherein at least an optical sensor, a plurality of active elements each including an oxide semiconductor as a channel layer, a metal wiring, and an array substrate
And a liquid crystal cell formed by bonding the counter substrate and the array substrate so as to face each other with the liquid crystal layer interposed therebetween,
The black matrix has a transmittance of 50% or more in a wavelength range of light of 680 nm to 800 nm and a transmittance of 50% or more and a transmittance higher than that of 50% A red layer, a green layer, and a blue layer, the red layer, the green layer, and the blue layer,
The optical sensor includes:
And having a sensitivity region including the detection wavelength region,
Wherein the active matrix substrate is positioned closer to the liquid crystal layer than the active element and overlaps with the black matrix when viewed from a plane from the counter substrate,
Wherein at least the surface layer of the metal wiring and the dummy pattern is made of copper or a copper alloy,
Wherein the metal wiring and the dummy pattern are formed in an area overlapping with the optical sensor at a lower portion of the optical sensor when viewed in plan from the counter substrate. 1. A color filter comprising a first transparent substrate, a black matrix having at least a plurality of pixel openings on the first transparent substrate, and color filters each including red, green and blue coloring pixels in the plurality of pixel openings, And a transparent resin layer in this order,
And a second transparent substrate, wherein at least an optical sensor, a plurality of active elements each including an oxide semiconductor as a channel layer, a metal wiring, and an array substrate
And a liquid crystal cell formed by bonding the counter substrate and the array substrate so as to face each other with the liquid crystal layer interposed therebetween,
The black matrix has a transmittance of 50% or more in a wavelength range of light of 680 nm to 800 nm and a transmittance of 50% or more and a transmittance higher than that of 50% A red layer, a green layer, and a blue layer, the red layer, the green layer, and the blue layer,
The optical sensor includes:
And having a sensitivity region including the detection wavelength region,
Wherein the active matrix substrate is positioned closer to the liquid crystal layer than the active element and overlaps with the black matrix when viewed from a plane from the counter substrate,
Wherein at least the surface layer of the metal wiring and the dummy pattern is made of copper or a copper alloy,
Wherein the metal wiring and the dummy pattern are formed in an area overlapping with the optical sensor at a lower portion of the optical sensor when viewed in plan from the counter substrate. 4. The method according to any one of claims 1 to 3,
Wherein the black matrix comprises a plurality of organic pigments as a main color material. 4. The method according to any one of claims 1 to 3,
Wherein the oxide semiconductor is a composite metal oxide selected from the group consisting of gallium, indium, zinc, hafnium, tin, yttrium, titanium, germanium and silicon. The method according to claim 2 or 3,
Wherein the color filter has the overlap portion at a position where the red layer and the black matrix overlap each other, a position where the green layer overlaps the black matrix, and a position where the blue layer and the black matrix overlap each other,
Wherein the optical sensor is provided at a lower portion of each coloring pixel of the red layer, the green layer, and the blue layer and a lower portion of the overlapping portion in plan view. 4. The method according to any one of claims 1 to 3,
And a backlight unit provided on a side of the liquid crystal cell opposite to the counter substrate and emitting light in a wavelength region longer than at least 680 nm. 4. The method according to any one of claims 1 to 3,
And a photosensor formed to overlap with the pixel opening when viewed from a plane of the counter substrate and having a sensitivity region in at least a visible light region.

Images