TWI595289B - Liquid crystal display device - Google Patents

Description

Liquid crystal display device

The present invention relates to a liquid crystal display device including a photosensor, and more particularly to a liquid crystal display device capable of improving the sensitivity of an infrared light region of a photo sensor.

The case is based on the priority of Japanese Patent Application No. 2013-142043 filed on Jan. 5, 2013, to the Japanese Patent Office.

In recent years, a method of directly inputting selection information or the like from a display screen of a liquid crystal display device has been widely used as a capacitive method using a touch panel. The touch panel is generally configured to be attached to a display screen of a liquid crystal display device or the like for use.

However, the touch panel has a problem that it is difficult for an observer who is away from the display screen to operate. Further, since the thickness and weight of the touch panel are applied to the display device, the touch panel is less likely to be thinner and lighter in a small device such as a mobile phone or a tablet.

Therefore, a light sensor can be provided inside the liquid crystal display device by an observer operating away from the position of the display screen, and sensing by the light sensor is also being explored. Further, in the liquid crystal display device in which the photo sensor is provided, it is preferable to achieve accurate color separation in areas such as imaging, color reproduction, and optical communication.

For example, the technique disclosed in Patent Document 1 uses detection A color filter substrate and a photo-electrical sensor are used for the color filter, and the visible light of the first wavelength and the non-visible light of the second wavelength are input from the screen. Specifically, it is described that the infrared light of the non-visible light is penetrated by separately providing the infrared color filter, and the problem of an increase in engineering needs to be solved, so that the color of the color filter is overlapped to solve the problem.

However, in the configuration of the color of the superimposed color filter disclosed in Patent Document 1, there is a fear that the liquid crystal alignment has an unfavorable difference. Further, in the structure in which the color of the color filter is superimposed, after the penetration region of the color filter for detection (infrared color filter) is 800 nm, the configuration is not suitable for the color separation of red, green, and blue. Specifically, the problem is that light in the wavelength region near 680 nm to around 800 nm cannot be completely separated.

Further, for example, in the technique disclosed in Patent Document 2, the transistor is provided at a position overlapping the photodiode. However, the technique disclosed in Patent Document 2 is for making a display device at a low price, or for a small-sized and lightweight technology, and is completely independent of a sensitivity sensor of a photodiode, that is, a transistor or a photodiode. Related wiring techniques or oxide semiconductor technologies have not been disclosed.

Further, for example, the technique disclosed in Patent Document 3 relates to an active matrix display substrate including a thin film transistor. However, Patent Document 3 does not disclose a sensitivity enhancement technique or an oxide semiconductor technique of a photo sensor. Further, Patent Document 3 describes wet etching of copper or a copper-containing alloy using an aqueous alkaline solution containing an oxidizing agent.

However, as disclosed in Patent Document 3, it is desired to perform wet etching without forming an amorphous film of a field effect transistor (TFT, Thin-Film Transistor). It is difficult for the quality to cause damage. Further, when dry etching is performed on copper or a copper-containing alloy, contamination by copper ions is remarkable, and it is more difficult to perform dry etching without causing damage to the amorphous crucible. Further, even if dry etching is performed during the formation of the channel layer of the amorphous germanium, the channel portion may be contaminated, and the copper wiring technique in the TFT process of the amorphous germanium semiconductor is not practical.

[Previous Technical Literature] [Patent Literature]

[Patent Document 1] Japanese Patent Laid-Open Publication No. 2009-129397

[Patent Document 2] Japanese Patent Laid-Open Publication No. 2013-008991

[Patent Document 3] Japanese Patent Laid-Open No. Hei 10-307303

The present invention has been made in view of the above conventional problems, and an object thereof is to provide a liquid crystal display device having good sensitivity while using light sensing.

In order to solve the above problems, several aspects of the present invention provide the following liquid crystal display devices.

A liquid crystal display device according to a first aspect of the present invention includes: a liquid crystal panel in which a counter substrate and an array substrate are opposed to each other via a liquid crystal layer; and the counter substrate has a first transparent substrate. A black matrix having a plurality of pixel openings and a transparent resin layer are laminated on the first transparent substrate, and the array substrate has a second transparent substrate on the second transparent substrate. Configuring at least a plurality of active elements with a photo-sensing device and an oxide semiconductor as a channel layer The black matrix has a transmittance of 50% or more in a detection wavelength region of a light wavelength of 680 nm or more and 800 nm or less, and a longer wavelength side than a wavelength of 50% or more of the transmittance. It has a penetration characteristic that becomes a higher transmittance. The sensor has a sensitivity region including the detection wavelength region, and is formed closer to the liquid crystal layer than the active device, and is formed by overlapping the black matrix in a plan view of the opposite substrate; the metal At least the surface layer of the wiring is made of copper or a copper alloy, and when viewed from the opposite substrate, it is formed as a region where the light sensor overlaps with the photosensor.

A liquid crystal display device according to a second aspect of the present invention includes: a liquid crystal panel in which a counter substrate and an array substrate are opposed to each other via a liquid crystal layer; and the counter substrate has a first transparent substrate; The first transparent substrate has at least a plurality of pixel openings and a light shielding layer for shielding light in the visible light region and the infrared light region, and each of the plurality of pixel openings has a red layer, a green layer, and a blue layer. a color filter of a coloring element, a black matrix and a transparent resin layer are sequentially laminated; the array substrate has a second transparent substrate, and at least a photosensor is disposed on the second transparent substrate, and an oxide is provided The semiconductor is a plurality of active elements and metal wirings as a channel layer; the black matrix has a transmittance of 50% or more in a detection wavelength region of a light wavelength of 680 nm or more and 800 nm or less, and a transmittance of 50% or more. The wavelength above the longer wavelength side has a penetration characteristic which is higher transmittance, and has an overlapping portion overlapping with any of the red layer, the green layer, and the blue layer. The sensor has a sensitivity region including the detection wavelength region, and is located closer to the liquid crystal layer than the active device, and the opposite substrate The metal wiring is formed to overlap with the black matrix in a plan view; at least the surface of the metal wiring is made of copper or a copper alloy, and when the opposite substrate is viewed in plan, it is formed to be buried and overlapped with the photosensor. region.

A liquid crystal display device according to a third aspect of the present invention includes: a liquid crystal panel in which a counter substrate and an array substrate are opposed to each other via a liquid crystal layer; and the counter substrate has a first transparent substrate; The first transparent substrate has at least a black matrix having a plurality of pixel openings, and a color filter having red, green, and blue colored color pixels in the plurality of pixel openings, and a transparent resin. The array substrate is formed by sequentially arranging the second transparent substrate, and at least the photosensor and the plurality of active devices and metal wires including the oxide semiconductor as the channel layer are disposed on the second transparent substrate. The black matrix has a transmittance of 50% or more in a detection wavelength region of a light wavelength of 680 nm or more and 800 nm or less, and has a higher wavelength side than a wavelength of 50% or more of the above transmittance. The transmittance of the transmittance is accompanied by an overlapping portion overlapping with any of the red layer, the green layer, and the blue layer. The sensor includes a sensitivity region including the detection wavelength region, and is formed closer to the liquid crystal layer than the active device, and is formed to overlap the black matrix in a plan view of the opposite substrate. At least the surface of the metal wiring is made of copper or a copper alloy, and when viewed from the opposite substrate, it is formed as a region where the light sensor overlaps with the photosensor.

In the above liquid crystal display device of the present invention, it is preferable that the black matrix contains a plurality of organic pigments as main color materials.

In the above liquid crystal display device of the present invention, the oxide semiconductor is preferably gallium (Ga), indium (In), zinc (Zn), hafnium (Hf), tin (Sn), or ytterbium (Y). Two or more kinds of composite metal oxides are selected from titanium (Ti), germanium (Ge), and germanium (Si).

Preferably, in the liquid crystal display device of the aspect of the invention, the color filter is a position where the red layer overlaps with the black matrix, a position at which the green layer overlaps the black matrix, and the blue layer and the The positions at which the black matrices overlap each have the above overlapping portion. Further, it is preferable that the photosensor is provided in a lower portion of the red layer, the green layer, and the individual colored pixels of the blue layer in a plan view, and a lower portion of the overlapping portion.

Preferably, the liquid crystal display device of the above aspect of the present invention further includes a backlight unit provided on the opposite side of the liquid crystal cell from the opposite substrate to emit light of at least a longer wavelength region than 680 nm.

Preferably, the liquid crystal display device of the above aspect of the present invention further includes a photosensor formed by overlapping the pixel opening portion in a plan view of the opposite substrate, and having a sensitivity region at least in the visible light region. .

According to the liquid crystal display device of the present invention, it is possible to provide a liquid crystal display device having good sensitivity while using light sensing.

2‧‧‧Black matrix

3‧‧‧Lighting layer

4, 11‧‧‧2nd transparent resin layer

6‧‧‧Liquid layer

10‧‧‧1st transparent substrate

12‧‧‧1st transparent resin layer (transparent resin layer)

13‧‧‧Backlight unit

14‧‧‧Light source

15‧‧‧Polar plate

16‧‧‧ indicator

20‧‧‧ Openings (pixel opening)

21‧‧‧Upper electrode

22‧‧‧ lower electrode

23‧‧‧Contact hole

24‧‧‧Metal wiring

25‧‧‧virtual pattern (metal layer)

26‧‧‧Channel layer

28, 29‧‧‧Optoelectronics

30‧‧‧2nd transparent substrate

33‧‧‧Insulation

34‧‧‧Processing Department

35, 36, 37‧‧‧Amorphous

31, 51‧‧‧ pixel electrodes

32‧‧‧Common electrode

52‧‧‧ counter electrode (common electrode)

100‧‧‧Display device substrate (opposing substrate)

200‧‧‧ LCD

300‧‧‧Array substrate

400‧‧‧Liquid crystal display device

R‧‧‧ red layer

G‧‧‧Green layer

B‧‧‧Blue layer

S1‧‧‧1st light sensor

S2‧‧‧2nd light sensor

Fig. 1 is a graph showing the reflection characteristics of a metal corresponding to a wavelength.

Fig. 2 is a view showing the weight of the liquid crystal display device of the first embodiment of the present invention. Partially expand the profile.

Fig. 3 is a partial plan view showing a plurality of pixel openings of the liquid crystal display device of the first embodiment of the present invention.

Fig. 4 is a schematic cross-sectional view showing a liquid crystal display device according to a first embodiment of the present invention.

Figure 5 is a graph showing the wavelength selective penetration characteristics of the black matrix.

Fig. 6 is a cross-sectional view taken along line A-A' of Fig. 1.

Fig. 7 is a partial plan view showing a plurality of pixel openings of the liquid crystal display device of the second embodiment of the present invention.

Fig. 8 is a schematic cross-sectional view showing a liquid crystal display device according to a second embodiment of the present invention.

Fig. 9 is an enlarged cross-sectional view showing an essential part of a liquid crystal display device according to a second embodiment of the present invention.

Fig. 10 is a graph showing the penetration characteristics of the green layer and the penetration characteristics of the green layer and the black matrix.

Fig. 11 is a graph showing the penetration characteristics of the red layer and the penetration characteristics of the red layer and the black matrix.

Fig. 12 is a graph showing the penetration characteristics of the blue layer and the penetration characteristics of the blue layer and the black matrix.

Fig. 13 is a partial cross-sectional view showing the liquid crystal display device of the third embodiment.

[Formation of the Invention]

Hereinafter, embodiments of the liquid crystal display device of the present invention will be described with reference to the drawings. In addition, the following embodiments are fully understood. The present invention is not intended to limit the scope of the invention, unless otherwise specified. In addition, in the drawings used in the following description, in order to facilitate understanding of the features of the present invention, it is convenient to expand the important portions, and the dimensional ratios of the respective constituent elements are not limited to the actual ones.

In the respective embodiments, the same or substantially the same functions and components are denoted by the same reference numerals, and description thereof will be omitted or only when necessary. In the respective embodiments, only the features will be described, and the description of the components of the known liquid crystal display device will be omitted.

In each of the embodiments, the unit of display of the liquid crystal display device will be described by a pixel. A pixel is a minimum representation unit of a polygon having at least two parallel sides separated by a black matrix. In each of the embodiments, the pixels are substantially synonymous with the opening of the black matrix or the opening of the light shielding layer. Various embodiments of the liquid crystal driving method can be applied to the respective embodiments.

For example, an IPS method (In Plane Switching, a horizontal electric field method using horizontally aligned liquid crystal molecules), a VA method (Vertically Alignment), a HAN (Hybrid-aligned Nematic), and a TN ( Liquid crystal alignment method or liquid crystal driving method such as Twisted Nematic), OCB (Optically Compensated Bend), CPA (Continuous Pinwheel Alignment), ECB (Electrically Controlled Birefringence), TBA (Transverse Bent Alignment). The liquid crystal layer may contain liquid crystal molecules having positive dielectric anisotropy or liquid crystal molecules having negative dielectric anisotropy.

The direction of rotation (moving direction) of the liquid crystal molecules when the liquid crystal driving voltage is applied may be a direction parallel to the surface of the substrate, or may be a base The vertical orientation of the plane of the board. The direction of the liquid crystal driving voltage applied to the liquid crystal molecules may be a horizontal direction, a two-dimensional or three-dimensional oblique direction, or a vertical direction.

The semiconductor suitable for the photosensor of each embodiment may be an amorphous germanium semiconductor having a sensitivity in a visible light region (for example, a light wavelength of 400 nm to 700 nm) in the infrared light region, or a wavelength in the near ultraviolet region or blue region. A polycrystalline germanium semiconductor having a main sensitivity, a microcrystalline germanium semiconductor, a germanium (SiGe) semiconductor, an oxide semiconductor represented by IGZO (registered trademark) or ITZO (registered trademark), or the like.

When using their semiconductors, it is preferred to adjust their band gap to impart a sensitivity region to the photosensor in the wavelength region of interest. In the SiGe semiconductor, the energy gap can be continuously changed by the addition ratio of Ge, and the light receiving wavelength of the light receiving element can be adjusted to impart sensitivity to the infrared light region. It is also possible to form a SiGe semiconductor having a concentration gradient of Ge. For example, by using a semiconductor compound such as GaAs, InGaAs, PbS, PbSe, SiGe, SiGeC or the like, a photosensor suitable for detecting infrared light can be formed.

The liquid crystal display device with built-in photo sensor is easily affected by temperature and the backlight unit. In order to prevent input errors such as finger or laser caused by noise caused by the backlight unit or external light, it may be necessary to compensate the photo sensor. In the case of a photosensor, when a phosphor diode having a channel layer formed of polycrystalline germanium or amorphous germanium is used, a dark current may be generated due to a change in ambient temperature or the like, and the observation data may be mixed with the observation light. The situation of noise.

As a switching element that drives a liquid crystal layer, a photo sensor, or the like, an oxide semiconductor can be used as a channel. Layer field effect transistor (active device, TFT). Here, the oxide semiconductor refers to an oxide semiconductor containing at least two or more oxides among indium, gallium, tin, zinc, antimony, bismuth, titanium, antimony, and antimony. The oxide semiconductor can be exemplified as a composite metal oxide of indium, gallium, and zinc of IGZO. The channel layer formed of an oxide semiconductor may be an amorphous or crystallized material, but from the viewpoint of the stability of the electrical characteristics (e.g., Vth) of the transistor, it is preferred to use a crystallized material. The thickness of the channel layer of the oxide semiconductor is preferably, for example, about 2 nm to 80 nm.

The metal wiring of the array substrate including such a TFT may be a metal wiring in which at least two layers of copper or a copper alloy are used as the surface layer. For the metal wiring, for example, a copper alloy obtained by adding one or more elements selected from the group consisting of magnesium, titanium, nickel, molybdenum, indium, tin, zinc, aluminum, calcium, and the like to copper may be used. The element to be added to copper is not limited to the above elements, and the amount of copper added is preferably 3 atomic percent or less with respect to the atomic percentage of copper. When the atomic percentage is 1 atomic percent or less, a high light reflectance can be ensured without significantly reducing the reflectance of the metal wiring to light. More preferably, it is added in an amount of 1 atomic percent or less.

Here, the surface layer of the metal wiring refers to the liquid crystal layer side (the position close to the liquid crystal layer, the photosensor side, and the position close to the photosensor) when viewed from the cross section in the thickness direction. Metal layer (first metal layer). The metal layer (second metal layer) located at the lower portion is located on the side of the array substrate (near the array substrate) with respect to the copper or copper alloy of the surface layer.

As the second metal layer, a high melting point metal such as titanium, molybdenum, niobium or tungsten or an alloy of the same is preferably used. The second metal layer can select the etching rate A titanium alloy that is close to the copper or copper alloy of the first metal layer. The film thickness of the copper or copper alloy and the film thickness of the second metal layer are preferably, for example, in the range of 50 nm to 500 nm.

The film formation method of the first metal layer or the second metal layer in which the oxide semiconductor layer or the surface layer is made of copper or a copper alloy is not particularly limited, and it is preferable that the vacuum film formation by sputtering has an advantage in production efficiency. By the sputtering film forming apparatus, it is possible to form a film by forming a metal wiring composed of the first metal layer and the second metal layer with good efficiency on a large-area transparent substrate with a high throughput. The first metal layer made of copper or a copper alloy on the oxide semiconductor is selectively etched by, for example, an oxidizing alkaline etchant, and a pattern of metal wiring can be formed without causing damage to the oxide semiconductor. It is easy to process a metal wiring and a metal layer which are used as a surface layer with copper or a copper alloy which is difficult to achieve in a transistor of a lanthanide semiconductor, and a transistor element can be formed.

The first metal layer composed of copper or a copper alloy, for example, is shown on the long wavelength side of light as shown in Fig. 1, and particularly exhibits a high reflectance at 600 nm or more. As shown in FIG. 2, the metal wiring formed by overlapping the first photosensor S1 and the second photosensor S2 (filling the lower portion) can receive the light directly incident and the metal. The reflected light reflected by the wiring can improve the light sensitivity of the first photo sensor S1 and the second photo sensor S2. Further, in the embodiment shown in Fig. 2, the transistors 28 and 29 including the channel layer 26 of the oxide semiconductor are shown by the bottom gate structure, but are not limited to the bottom gate structure. For example, a top gate structure, a double gate structure, a dual gate structure, or the like may be employed.

<First embodiment>

In the liquid crystal display device of the first embodiment, a color display is assumed to be, for example, a liquid crystal display device including a backlight unit including a red light emitting LED, a green light emitting LED, and a blue light emitting LED. When the color display is not performed, a white light-emitting LED or a fluorescent lamp can be used as the backlight unit.

Fig. 3 is a partial plan view showing a plurality of pixel openings of the liquid crystal display device of the embodiment of the present invention. In addition, although the figure 3 shows only eight pixels, in fact, a plurality of pixels are arranged, for example, 1280 pixels are arranged in the X direction, and a display surface of the liquid crystal display device of 768 pixels is arranged in the Y direction. Part of it.

The plurality of pixels P, P, ... are separated by the pixel opening portion 20 formed in the black matrix 2. The photo sensor is composed of a first photo sensor (photosensor) S1 and a second photo sensor S2, and is disposed on the pixel P. Further, in the arrangement structure of the first photosensor S1 or the second photosensor S2, the structure of one set of photosensors is provided in a plurality of pixels, that is, a set of light perception is not set in all pixels. Instead of a detector, a set of photosensors (sparse configuration) can be set in one pixel selected by a plurality of pixels (at a predetermined interval).

The first photosensor S1 is disposed at a position covered by the black matrix 2 (a position overlapping the black matrix 2). Further, the second photosensor S2 is disposed in the pixel opening portion 20 so that incident light enters the outside from the outside of the display surface. The first photo sensor S1 or the second photo sensor S2 does not necessarily have to be disposed in the same pixel P. However, in order to calculate the light receiving data, the first photo sensor S1 and the second light are preferably used. The sensors S2 are disposed at positions close to each other.

In the present embodiment, the light receiving data of the first photosensor S1 is subtracted from the light receiving data of the second photosensor S2, and the light receiving data of the visible light region other than the infrared ray region can be extracted. When the subtraction is performed, for example, the dark current held by the first photosensor S1 or the second photosensor S2 can be subtracted, and high-accuracy light-receiving data can be obtained.

4 is a schematic cross-sectional view showing a liquid crystal display device 400 including a backlight unit 13 on the back side of the array substrate 300 (a position close to the back surface). A polarizing plate 15 as an optical control element is provided on the front and back surfaces of the liquid crystal cell 200, and a first photosensor S1 or a second photosensor S2 is disposed under the liquid crystal layer 6. For example, a pointer of the observer's finger 16 or the like reflects the light 18 emitted from the backlight unit 13 and receives light as the incident light 19 by the first photosensor S1 or the second photosensor S2. The incident light 19 is not limited to the reflected light from an indicator such as the finger 16, and may be, for example, incident light from a laser pointer or the like. Further, one portion of the incident light 19 is reflected by the metal wiring 24 disposed to fill the lower portion of the first photosensor S1, and the light is received by the first photosensor S1. Accordingly, the detection sensitivity of the incident light 19 can be improved. The backlight unit 13 includes, for example, a red light-emitting LED, a green light-emitting LED, a blue light-emitting LED, and an infrared light-emitting LED as the light source 14.

Fig. 2 is a cross-sectional view showing a section taken along line B-B' of Fig. 3.

A metal wiring 24 constituting a source line or a drain line or the like is disposed under the first photosensor S1, or a dummy pattern 25 of a metal layer is disposed at a portion where the metal wiring 24 is not formed. For example, the dummy pattern 25 can be formed in the same layer as the gate line in the manufacturing process. Although not shown in Figure 2 However, a metal wiring 24 such as a source line or a drain line is disposed under the second photosensor S2, or a dummy pattern 25 of a metal layer is disposed at a portion where the metal wiring 24 is not formed.

The first photosensor S1 and the second photosensor S2 (not shown) have an amorphous germanium 35 and an intrinsic semiconductor of a P-type semiconductor in a position away from the position close to the liquid crystal layer 6. The amorphous germanium 36 of the type I) and the amorphous germanium 37 of the N-type semiconductor are laminated. For example, the amorphous germanium 35 of the P-type semiconductor can have a film thickness of 5 nm to 50 nm, the amorphous germanium 36 of the I-type semiconductor can have a film thickness of 100 nm to 1000 nm, and the amorphous germanium 37 of the N-type semiconductor can have a film thickness of 20 nm to 200 nm. form.

The upper electrode 21 and the lower electrode 22 are disposed as a translucent conductive film (transparent conductive film) on the upper surface of the amorphous germanium 35 of the P-type semiconductor and the lower surface of the amorphous germanium 37 of the N-type semiconductor. The transparent conductive film can be formed, for example, of a conductive metal oxide called ITO (Indium Tin Oxide). The upper electrode 21 can be, for example, a zigzag-shaped thin line pattern or a comb-shaped thin line pattern. By the work of the pattern shape of the upper electrode 21, the current collecting effect of the lower electrode 22 can be improved.

In order to increase the sensitivity of the first photosensor S1 or the second photosensor S2, for example, a columnar structure, a concavo-convex structure, a quantum dot, or the like may be laminated as a transparent resin. It is also preferred to add particles or dyes having a wavelength conversion function to the structures. The formation positions of the P-type semiconductor and the N-type semiconductor may be interchanged or may be formed in parallel in the horizontal direction. Amorphous germanium can also be used as a microcrystalline germanium.

They are the first photo sensor S1 or the second photo sensor S2, such as As shown in the figure, a substrate on which an oxide semiconductor is formed in advance is formed, for example, by a conventional amorphous germanium semiconductor project.

The first photosensor S1 is electrically connected to the electrode of the transistor via the lower electrode 22 via the contact hole 23 and the metal wiring 24. The upper electrode 21 of the first photosensor S1 is connected to the common electrode wiring via a contact hole (not shown). Accordingly, when the reset signal is given, the potential of the first photosensor S1 can be set to the common potential. The insulating layer 33 can be formed, for example, of cerium oxide, cerium oxynitride, aluminum oxide, a mixed oxide containing the same, or an acrylic resin which is photosensitive and can be alkali-developed. The second photo sensor S2 (not shown) in the second drawing may be formed in the same manner as the first photo sensor S1.

A plurality of transistors are disposed under the first photo sensor S1 or the second photo sensor S2, and the first photo sensor S1 or the second photo sensor S2 can be driven. A plurality of transistors formed of an oxide semiconductor can be used, for example, in a selective transistor or amplifying transistor of a first photosensor S1 or a second photosensor S2, a reset transistor, or a liquid crystal driving transistor. . When the capacity of the first photo sensor S1 or the second photo sensor S2 is small, an auxiliary capacitor can be separately disposed.

The reflectance of light of the copper or copper alloy constituting the metal wiring 24 as shown in Fig. 1 shows a high reflectance on the long wavelength side of the light, particularly 600 nm or more. As shown in FIG. 2, the lower portion of the first photo sensor S1 or the second photo sensor S2 is buried, that is, the region overlapping the first photo sensor S1 or the second photo sensor S2. The pattern of the metal wiring 24 is arranged such that the reflected light reflected by the metal wiring 24 can receive light from the first photosensor S1 or the second photosensor S2. Accordingly, the light receiving efficiency of the first photo sensor S1 or the second photo sensor S2 can be improved.

The black matrix 2 of the present embodiment has a transmission characteristic as shown by a line BLK1 of wavelength selective transmission characteristics shown in FIG. 5, and a transmittance of 50% or more in a detection wavelength region of 680 nm or more and 800 nm or less. In the case where the transmittance is 50% or more and the wavelength is longer, the transmittance is higher, and the visible light is hardly penetrated and the light in the infrared region can be penetrated. The half value wavelength of the black matrix 2 can be adjusted to a range of about 680 nm to 800 nm by selection or combination of organic pigment species. Here, the half-value wavelength is defined as the wavelength of light having a transmittance of 50%. Further, the material constitution of the black matrix 2 will be described in detail later.

Fig. 6 is a cross-sectional view taken along line A-A' of Fig. 3, showing the configuration of a liquid crystal display device. In addition, illustration of the driving transistor, the polarizing plate, the alignment film, and the like of the liquid crystal layer is omitted.

The liquid crystal molecules of the liquid crystal layer 6 of FIG. 6 have a horizontal initial alignment on one surface of the array substrate 300, and are rotated on the surface by a voltage applied between the pixel electrode 31 and the common electrode 32, by The transmittance of the light emitted by the backlight unit is controlled to be displayed. The dielectric anisotropy of the liquid crystal molecules may be positive or negative. A transparent electrode of ITO or the like is not formed on the transparent resin layer 12 (first transparent resin layer) of the counter substrate 100. Further, the alignment film on the transparent resin layer 12 is omitted from illustration.

<Second embodiment>

In the second embodiment, as shown in Fig. 7 and Fig. 8, the red layer R, the green layer G, and the blue layer are disposed at positions corresponding to the pixel opening portion 20 of the black matrix 2 formed in the liquid crystal display device. The composition of the color filter of layer B (Figs. 7 and 8 show the enlarged portion of the green layer G). The first photo sensor S1 or the second photo sensor S2 is formed in plural as in the first embodiment. Each pixel of a picture. The liquid crystal molecules of the liquid crystal layer 6 are vertically aligned liquid crystals, and are driven by a voltage applied between the counter electrode (common electrode) 52 and the pixel electrode 51, and are tilted in the horizontal direction when the voltage is applied. Make light penetrate. The polarizing plate is a crossed nicols and is normally off.

Fig. 8 is a sectional view taken along line C-C' of Fig. 7. The light shielding layer 3 is disposed in a predetermined pattern in substantially the same shape as the black matrix 2, and the second transparent resin layer 4 is formed on the color filter. The formation of the second transparent resin layer can also be omitted.

For example, the light-shielding layer 3 can be formed using a light-shielding carbon as a color material, and substantially does not allow visible light and infrared light to penetrate. The black matrix 2 is the same as the first embodiment, and has a plurality of organic pigments mixed therein and has a property of not penetrating the visible light region and having a penetrating infrared light region.

The black matrix 2 according to the embodiment of the present invention is representative of the wavelengths BLK1 and BLK2 of the wavelength selective transmission characteristics as shown in FIG. 5, and the wavelength (half-value wavelength) of 50% transmittance can be set to about 680 nm. The range of 800nm. The adjustment of the half-value wavelength can be achieved by a combination of organic pigments or a pigment ratio or a film thickness adjustment of the black matrix 2.

As shown in Fig. 9, the black matrix 2 of the present embodiment has an overlapping portion overlapping the color filter (the green layer G in Fig. 9) in the region where the pattern of the light shielding layer 3 and the metal wiring 24 is not provided. Further, Fig. 9 is a cross-sectional view taken along line D-D' of Fig. 7.

Fig. 10 is a view showing a transmission characteristic GL of the pattern of the green layer G, and an example of the penetration characteristic GLBLK in which the pattern of the green layer G and the transmission characteristic BLK1 of the black matrix 2 (see Figs. 5 and 9) are overlapped. The graph. wear The transmission characteristic GL corresponds to the light receiving data of the second photosensor S2 shown in Fig. 9. The penetration characteristic GLBLK is equivalent to the light receiving data of the first photosensor S1 shown in Fig. 9.

The high-accuracy green detection data in the visible light region is detected by the light detected by the pattern of the green layer G, and the light detected by optically overlapping the pattern of the green layer G with the black matrix 2 is subtracted. Obtained by detecting the data. The arithmetic processing of the data is performed by the processing unit 34, and only the green detection data in the visible light region can be extracted.

Fig. 11 is a view showing the transmission characteristic RL of the pattern of the red layer R, and the penetration characteristic RLBLK of the pattern of the red layer R and the transmission characteristic BLK1 of the black matrix 2 (see Figs. 5 and 9). A graph of an example. The penetration characteristic RL corresponds to the light receiving data of the second photosensor S2 shown in Fig. 9. The penetration characteristic RLBLK corresponds to the light receiving data of the first photosensor S1 shown in Fig. 9.

The high-accuracy red detection data in the visible light region is detected by the light detected by the pattern of the red layer R, and the light detected by optically overlapping the pattern of the red layer R with the black matrix 2 is subtracted. Test the data to get. The arithmetic processing of the data is performed by the processing unit 34, and only the red detection data in the visible light region can be extracted.

Fig. 12 is a graph showing an example of the penetration characteristic BL of the pattern of the blue layer B and the penetration characteristic BLBLK obtained by superposing the pattern of the blue layer B and the penetration characteristic BLK1 of the black matrix 2. The penetration characteristic BL corresponds to the light receiving data of the second photosensor S2 shown in Fig. 9. The penetration characteristic BLBLK corresponds to the light receiving data of the first photosensor S1 shown in Fig. 9.

High-accuracy blue detection data in the visible region The detection data of the light detected by the pattern of the blue layer B is obtained by subtracting the detection data of the light detected by optically overlapping the pattern of the blue layer B and the black matrix 2. The arithmetic processing of the data is performed by the processing unit 34, and only the blue detection data in the visible light region can be extracted.

The first light-receiving data of the first photosensor S1 and the second photosensor S2 are subtracted, and during the calculation, the dark current due to the environmental temperature change or the like can be compensated, so that a higher precision can be extracted. Light receiving data. If the incident light is a sunlight-like external light or a dimly lit room or the like, the light-receiving data can be fed back to the brightness adjustment of the liquid crystal display device in accordance with the individual light-receiving conditions.

For the purpose of obtaining light-receiving data of, for example, only 680 nm to 800 nm in the near-infrared light region, for example, the light-receiving material of the first photosensor S1 which is located below the overlapping portion of the pattern of the red layer R and the black matrix 2 may be received. The light-receiving data of the first photosensor S1 located in the lower portion of the overlapping portion of the black matrix 2 and the black matrix 2 is subtracted. In this way, light-receiving data between 680 nm and 800 nm can be extracted. At this time, the above dark current compensation can also be performed at the same time.

Further, in the ninth diagram, the backlight unit (not shown) may be provided with individual solid-state light-emitting elements (LEDs) of red, green, and blue light. For example, for the red LED, the green LED, the blue LED, the time division (field sequence) illumination, and the liquid crystal of the pixel portion are synchronously controlled. In this way, full color display can be performed. Further, in addition to the red LED, the green LED, and the blue LED, an infrared illuminating LED is added, and the infrared ray emitted from the infrared illuminating LED can be irradiated to an indicator such as a finger. This configuration can be used for touch sensing applications.

The first photo sensor S1 can be applied to the sensing of infrared light receiving. It can be used for color reproduction or personal authentication, etc., when it is used together with red, green, and blue. For example, the liquid crystal display device including the substrate for a liquid crystal display device according to the embodiment of the present invention can be applied to a personal authentication system such as finger recognition by a high resolution of 300 ppi or more.

Further, when the photosensor of the liquid crystal display device according to the embodiment of the present invention uses a bismuth-based photodiode, a PIN diode can be used, or a PN diode can be used. In the case of the PIN diode, the P-type region/essential region/N-type region may be arranged side by side in the horizontal direction of the surface of the transparent substrate, or may be configured to be vertically stacked on the surface of the transparent substrate.

As described above, at the position where the pattern of the black matrix 2 and the red layer R included in the liquid crystal display device of the present invention overlaps, the pattern of the black matrix 2 and the green layer G overlaps, and the black matrix 2 and the blue layer B The overlapping patterns are respectively disposed at overlapping positions, and high-precision color separation can be realized by utilizing the overlapping portions.

The liquid crystal display device including the substrate for a display device according to the embodiment of the present invention can be used, for example, for color reproduction, color imaging, or motion sensor, and can realize touch sensing, optical communication, and the like using an infrared light region.

Further, since the transmittances of the light shielding layer 3 and the black matrix 2 in the near-infrared light region are different, the alignment (alignment) of the manufacturing process can be aligned, for example, at a wavelength of 800 nm. The pattern of the light shielding layer 3 of the present embodiment can be used as a frame edge portion having a high light-shielding property, and the frame edge portion surrounds four sides of a periphery including a plurality of openings. The mark for alignment by the light shielding layer 3 may be formed in advance on the transparent substrate on.

<Third embodiment>

The third embodiment is an embodiment of the present invention in which the black matrix 2 is formed before the pattern of the red layer R, the pattern of the green layer G, and the pattern of the blue layer B are formed.

Fig. 13 is a partial cross-sectional view showing the liquid crystal display device of the third embodiment.

In the liquid crystal molecules of the liquid crystal layer 6 of the third embodiment, the initial alignment of the liquid crystal is vertically aligned, and the voltage applied between the counter electrode (common electrode) 52 and the pixel electrode 51 is driven. Pour in the horizontal direction to penetrate the light. The polarizing plate is a crossed polarizer and is always non-conductive.

For the purpose of color separation without using color separation, the arrangement of the second photo sensor S2 can be omitted. For the purpose of touch sensing using the near-infrared light region, it is only necessary to arrange any of the red layer R pattern, the green layer G pattern, and the blue layer B pattern overlapping with the black matrix 2 The first photo sensor S1 is sufficient. The first photosensor S1 can be formed into various densities, for example, in one pixel or in one form of three pixels or six pixels.

<Example of constituent materials>

Hereinafter, an example of a constituent material of each member of the liquid crystal device described in each of the above embodiments will be described.

(transparent resin)

Photosensitivity used in the formation of a color filter composed of a black matrix 2, a light-shielding layer 3, and a pixel pattern of a red layer R, a green layer G, and a blue layer B The coloring composition contains a polyfunctional monomer, a photosensitive resin, a non-photosensitive resin, a polymerization initiator, a solvent, and the like in addition to a pigment dispersion (hereinafter referred to as a paste). For example, a highly transparent organic resin such as a photosensitive resin or a non-photosensitive resin used in the present embodiment is collectively referred to as a transparent resin.

As the transparent resin, a thermoplastic resin, a thermosetting resin, or a photosensitive resin can be used. The thermoplastic resin may, for example, be a butyral resin, a styrene-maleic anhydride copolymer, a chlorinated polyethylene, a chlorinated polypropylene, a polyvinyl chloride, a vinyl chloride-vinyl acetate copolymer, or a poly Vinyl acetate, urethane resin, polyester resin, propylene resin, alkyd resin, polystyrene resin, polyamide resin, rubber resin, cyclized rubber resin, cellulose, polybutadiene, poly Ethylene, polypropylene, polyimine resin, and the like. For thermosetting resins, for example, epoxy resin or benzoquinone can be used. (benzoguanamine) resin, rosin modified maleic acid resin, rosin modified fumaric acid resin, melamine resin, urea resin, phenol resin, and the like. The thermosetting resin can also be formed by reacting a melamine resin with an isocyanate group-containing compound.

(alkaline soluble resin)

In the formation of the light shielding layer 3, the black matrix 2, the first transparent resin layer 12, the second transparent resin layer 11, and the color filter of the present embodiment, it is preferable to use a photosensitive resin which can form a pattern by photolithography Composition. These transparent resins are preferably resins which impart alkali solubility. As the alkali-soluble resin, a resin having a carboxyl group or a hydroxyl group may be used, and other resins may be used. For the alkaline soluble resin, for example, propylene oxide can be used. An acid resin, a phenol resin, a polyvinyl phenol resin, an acrylic resin, a carboxyl group-containing epoxy resin, a carboxyl group-containing urethane resin, or the like. The alkali-soluble resin is preferably an epoxy acryl resin, a phenol resin, or an acryl resin, particularly an epoxy acrylate resin or a phenol resin, among the resins.

(Acrylic)

Representative of the transparent resin which can be used in the present embodiment is, for example, the following acrylic resin.

As the acrylic resin, for example, a polymer obtained by using, for example, (meth) acrylate; methyl (meth) acrylate, ethyl (meth) acrylate, (methyl) can be used. a propyl acrylate, a butyl (meth) acrylate, a third butyl (meth) acrylate, a benzyl (meth) acrylate, an alkyl (meth) acrylate such as dodecyl (meth)acrylate; Hydroxy-containing (meth) acrylate such as hydroxyethyl (meth) acrylate, hydroxypropyl (meth) acrylate, etc.; ethoxyethyl (meth) acrylate, glycidyl (meth) acrylate Ether group-containing (meth) acrylate; and cyclohexyl (meth) acrylate, isodecyl (meth) acrylate, dicyclopentenyl (meth) acrylate, etc. Base) acrylate and the like.

Further, the exemplified monomers may be used alone or in combination of two or more.

Further, the acrylic resin can be produced by using a copolymer of a compound such as styrene, cyclohexylmaleimide or phenylmaleimide which is copolymerized with a monomer of the same material. Further, for example, a copolymer obtained by copolymerizing a carboxylic acid having an ethylenically unsaturated group such as (meth)acrylic acid, and a glycidyl methacrylate (glycidyl) may be used. A compound such as methacrylate which is an epoxy group and an unsaturated double bond is reacted to thereby produce a photosensitive resin to obtain an acrylic resin. For example, a polymer of an epoxy group-containing (meth) acrylate such as glycidyl methacrylate or a copolymer of the polymer and another (meth) acrylate may be added (meth)acrylic acid or the like. The carboxylic acid-containing compound produces a photosensitive resin and acts as an acrylic resin.

(organic pigment)

For red pigments, for example, CIPigment Red 7, 9, 14, 41, 48:1, 48:2, 48:3, 48:4, 81:1, 81:2, 81:3, 97, 122, 123 can be used. 146, 149, 168, 177, 178, 179, 180, 184, 185, 187, 192, 200, 202, 208, 210, 215, 216, 217, 220, 223, 224, 226, 227, 228, 240, 242, 246, 254, 255, 264, 272, 279, and the like.

For yellow pigments, for example, CIPigment Yellow 1, 2, 3, 4, 5, 6, 10, 12, 13, 14, 15, 16, 17, 18, 20, 24, 31, 32, 34, 35, 35 can be used: 1, 36, 36: 1, 37, 37: 1, 40, 42, 43, 53, 55, 60, 61, 62, 63, 65, 73, 74, 77, 81, 83, 86, 93, 94, 95, 97, 98, 100, 101, 104, 106, 108, 109, 110, 113, 114, 115, 116, 117, 118, 119, 120, 123, 125, 126, 127, 128, 129, 137, 138, 139, 144, 146, 147, 148, 150, 151, 152, 153, 154, 155, 156, 161, 162, 164, 166, 167, 168, 169, 170, 171, 172, 173, 174, 175, 176, 177, 179, 180, 181, 182, 185, 187, 188, 193, 194, 199, 213, 214, and the like.

For the blue pigment, for example, C.I. Pigment Blue 15, 15:1, 15:2, 15:3, 15:4, 15:6, 16, 22, 60, 64, 80, or the like can be used. In addition, the half value wavelength of C.I. Pigment Blue 15:3 in the infrared region is around 760 nm. The half value wavelength of the black matrix 2 can be adjusted to, for example, the longer wavelength side than the 680 nm by adding a small amount of pigment of a C.I. Pigment Blue 15:3 pigment-like half-value wavelength in the wavelength region of 700 nm to 800 nm.

As the purple pigment, for example, C.I. Pigment Violet 1, 19, 23, 27, 29, 30, 32, 37, 40, 42, 50, etc. may be used, and among them, C.I. Pigment Violet 23 is preferred.

For green pigments, for example, CIPigment Green 1, 2, 4, 7, 8, 10, 13, 14, 15, 17, 18, 19, 26, 36, 45, 48, 50, 51, 54, 55, 58, etc. can be used. Among them, CIPigment Green 58 which is a zinc halide phthalocyanine green pigment is preferred. Aluminum halide phthalocyanine pigments can also be used as the green pigment.

(light-shielding layer and black matrix color material)

The light-shielding color material included in the light-shielding layer 3 and the black matrix 2 is absorbing in the visible light wavelength region, and has a light-shielding color material. In the light-shielding color material of the present embodiment, for example, an organic pigment, an inorganic pigment, a dye or the like can be used. The color material of the black matrix 2 which emphasizes the penetration of the infrared light region of the light is preferably an organic pigment. As the color material of the light shielding layer 3, for example, carbon black, titanium oxide, or the like can be used. The light-shielding layer 3 and the black matrix 2 may contain a dye. For example, an azo dye, an anthraquinone dye, a phthalocyanine dye, a quinone dye, a quinoline dye, a nitro dye, or a carbonyl dye may be used. A methine dye or the like. Organic pigments, for example To apply the above organic pigments. In addition, one type of the light-shielding color material may be used, or two or more types may be combined in an appropriate ratio.

For example, the visible light wavelength region is in the range of about 400 nm to 700 nm of the light wavelength.

The transmittance operation wavelength of the black matrix 2 of the present embodiment is in a region of about 680 nm to about 800 nm. The red layer can maintain a high transmittance at a wavelength of about 680 nm. The light wavelength of 800 nm is an operation portion in which the transmittance of the blue layer becomes high.

(Example of black resist for blackout layer)

A preparation example of a black paste (dispersion) used for the light shielding layer will be described.

The mixture of the following composition was uniformly stirred and mixed, and stirred by a bead mill disperser to prepare a black paste. Individual components are expressed in parts by mass.

Carbon pigment 20 parts

Dispersing agent 8.3 parts

Copper phthalocyanine derivative 1.0 part

Propylene glycol mono methyl ether acetate 71 parts

The black paste was mixed and stirred to obtain a mixture of the following composition, and the mixture was filtered through a 5 μm filter to prepare a black resist which is suitable for the frame edge portion 1. In the present embodiment, the resist means a photosensitive coloring composition containing carbon or a pigment.

Black paste 25.2 servings

Acrylic resin solution 18 parts

Dipentaerythritol pentaacrylate and dipentaerythritol hexaacrylate 5.2 parts

Photopolymerization initiator 1.2 parts

Sensitizer 0.3 parts

Leveling agent 0.1 part

Cyclohexanone 25 parts

Propylene glycol monomethyl ether acetate 25 parts

In the present embodiment and the above-described respective embodiments, the main color material of the black resist or the color resist means a color material which accounts for 50% or more of the total mass ratio (%) of the color material contained in the resist. For example, black resist, carbon accounts for 100% of the color material, and carbon is the main color material. Further, in order to adjust the color gradation or the reflection color of the black resist which uses carbon as a main color material, an organic pigment such as red, yellow or blue may be added to the total mass ratio of 10% or less.

(Example of black resist used in black matrix)

The mixing of the organic pigment used in the black matrix 2 is as follows.

C.I. Pigment Red 254 (labeled R254 below)

C.I. Pigment Yellow 185 (marked Y185 below)

C.I. Pigment Violet 23 (hereinafter marked as V23)

Any of the three types of pigments may exclude any of Y139 or R254. Further, in addition to the three types of pigments, a small amount of other types of pigments may be added for color (penetration wavelength) adjustment. For example, the organic pigment may be added in a small amount of 30% by mass or less. For example, in order to adjust the operation of the spectral characteristics near the light wavelength of 700 nm (adjustment of the shape of the spectral curve), a zinc halide phthalocyanine pigment, a copper halide phthalocyanine pigment, an aluminum halide phthalocyanine pigment or the like may be used in an amount of 30% by mass or less. CI Pigment Blue 15:3.

Black matrix 2, the transmittance in the visible light region is preferably 5% the following. The visible light region is usually about 400 nm to 700 nm in wavelength. When the half value wavelength of the black matrix 2 is set to be in the range of 670 nm to 750 nm, it is necessary to operate the infrared transmittance characteristic from about 660 nm in the vicinity of the light wavelength, and to increase the transmittance characteristic on the long wavelength side. The wavelength range of the low transmittance of the black matrix 2 can be set to be in the range of about 400 nm to 650 nm. Further, when the transmittance of the black matrix 2 is set to a low value of about 5% or less in a range of about 400 nm to 650 nm, the amount of the pigment contained in the organic pigment light-shielding layer may be increased, or the black matrix 2 may be thickened. The film thickness is extremely easy to achieve.

The wavelength position of the half-value wavelength can be easily adjusted by the amount of the pigment, the composition ratio of the purple pigment, the green pigment, the yellow pigment, the red pigment, and the blue pigment described later, and the film thickness of the black matrix 2. For the green pigment applied to the black matrix 2, various green pigments described below can be used. When the half-value wavelength of the black matrix 2 is set to a wavelength of 680 nm to 800 nm, the action of the green pigment or the blue pigment, preferably the infrared transmittance (for example, a half-value wavelength) is in the range of 680 nm to 800 nm. Pigments. The adjustment of the half-value wavelength to the wavelength range of 680 nm to 800 nm is mainly based on purple pigment and green pigment. When it is desired to adjust the spectral characteristics of the black matrix 2, a blue pigment may also be added. Instead of the purple pigment of the mixed example of the above organic pigment, the half value wavelength can be adjusted to about 800 nm by using the above blue pigment.

The mass ratio (%) of R254 can be, for example, in the range of 15 to 40%.

The mass ratio (%) of Y185 can be, for example, in the range of 10 to 30%.

The mass ratio (%) of V23 can be, for example, in the range of 75 to 30%.

By further adding the above green pigment or blue pigment, the mass ratio of the entire pigment of V23 can be lowered.

The film thickness of the black matrix 2 is, for example, at a film thickness of about 1 μm, and the violet pigment of V23 is added to the black matrix 2 at any value in the range of 75 to 30%. Thus, the black matrix 2 has a half-value wavelength on the longer wavelength side than the light wavelength of 670 nm. The yellow organic pigment is added in an amount of 10 to 30%, and 15 to 40% of the red organic pigment is further mixed to sufficiently reduce the transmittance of the black matrix 2 at a wavelength of 400 nm to 660 nm. By preventing the transmittance of the organic pigment light-shielding layer from being slightly higher in the wavelength range of 400 nm to 660 nm (by preventing the transmittance of the black matrix BM from slightly increasing from the reference line of the transmittance of 0% in the spectral characteristics) By subtracting the light receiving data of the second photo sensor S2 from the light receiving data of the first photo sensor S1, accurate color separation can be performed. In addition, the transmittance of the half-value wavelength or the black matrix 2 can be adjusted by the film thickness of the black matrix 2.

Usually, the pigment is dispersed in a resin or a solution to form a pigment paste (dispersion liquid) before a color resist (coloring composition) is formed according to the pigments. For example, when the pigment Y185 monomer is to be dispersed in a resin or a solution, the following materials are mixed for 7 parts by mass of the pigment Y185.

Acrylic resin solution (solid content 20%) 40 parts

Dispersing agent 0.5 parts

Cyclohexanone 23.0 parts

Further, other pigments such as V23 and R254 may be dispersed in the same resin or solution to form a black pigment dispersion paste.

The composition ratio of the black resist is formed by the above pigment dispersion paste as exemplified below.

Y139 paste 14.70 parts

V23 paste 20.60 parts

Acrylic resin solution 14.00 parts

Propylene monomer 4.15 parts

Starting agent 0.7 parts

Sensitizer 0.4 parts

Cyclohexanone 27.00 parts

PGMAC 10.89

A black resist used for the black matrix 2 is formed in accordance with the above composition ratio.

The main color material of the pigment used for the formation of the black matrix 2, that is, the black resist, is a purple pigment V23 which accounts for about 58% of the total mass ratio. Most of the organic pigments have a high transmittance at a wavelength region longer than about 800 nm. The yellow pigment Y139 is also an organic pigment having a high transmittance in a longer wavelength region of a light wavelength of 800 nm.

For example, the main color material of the black resist can also be set as 100% organic pigment. Or, in the black resist which uses an organic pigment as a main color material, it is based on the adjustment of a light-shielding property, and carbon is added for the objective of 40% or less of whole mass.

The color resist containing the above black resist is applied onto a transparent substrate and patterned using a conventional photolithography process. Alternatively, for example, patterning can be carried out by a dry etching method using a phenolic photosensitive resist.

A black resist which is mainly composed of carbon, and an alignment mark is formed in addition to the edge of the frame, and the black mark can be used by using the alignment mark. Alignment after coating. As shown in Fig. 5, the alignment mark is identified by, for example, an infrared camera or the like using a difference in transmittance of a light wavelength of 850 nm.

The liquid crystal display device of the embodiment of the present invention can be used in various applications. The electronic device of the possible object of the liquid crystal display device of the present invention may be, for example, a mobile phone, a portable game machine, a mobile information terminal device, a personal computer, an electronic book, a video camera, a digital camera, a head mounted display, a navigation system. , audio reproduction equipment (car audio, digital audio player, etc.), photocopying machine, fax machine, printer, multifunction machine, vending machine, automatic teller machine (ATM), personal authentication machine, optical communication equipment.

2‧‧‧Black matrix

10‧‧‧1st transparent substrate

12‧‧‧1st transparent resin layer (transparent resin layer)

21‧‧‧Upper electrode

22‧‧‧ lower electrode

23‧‧‧Contact hole

24‧‧‧Metal wiring

25‧‧‧virtual pattern (metal layer)

26‧‧‧Channel layer

30‧‧‧2nd transparent substrate

33‧‧‧Insulation

35, 36, 37‧‧‧Amorphous

100‧‧‧Display device substrate (opposing substrate)

300‧‧‧Array substrate

S1‧‧‧1st light sensor

Claims (8)

A liquid crystal display device comprising: a liquid crystal panel in which a counter substrate and an array substrate are opposed to each other via a liquid crystal layer; and the counter substrate has a first transparent substrate on the first transparent substrate A black matrix having a plurality of pixel openings and a transparent resin layer are laminated at least in sequence; the array substrate has a second transparent substrate, and at least a photosensor and an oxide are disposed on the second transparent substrate The semiconductor is a plurality of active elements and metal wirings as a channel layer; the black matrix has a transmittance of 50% or more in a detection wavelength region of a light wavelength of 680 nm or more and 800 nm or less, and a transmittance of 50% or more. The wavelength above the longer wavelength side has a penetration characteristic formed to have a higher transmittance; the sensor has a sensitivity region including the detection wavelength region, and is closer to the liquid crystal layer than the active element. And forming the opposite substrate in a plan view so as to overlap the black matrix; wherein the metal wiring has at least a surface layer made of copper or a copper alloy, and the opposite base Plan view, and said buried lines are formed as the light sensor overlap. A liquid crystal display device comprising: a liquid crystal panel in which a counter substrate and an array substrate are opposed to each other via a liquid crystal layer; and the counter substrate has a first transparent substrate, and the first transparent substrate a light-shielding layer having at least a plurality of pixel openings and shielding light in the visible light region and the infrared light region on the transparent substrate, and the color pixels of the red, green, and blue layers respectively in the plurality of pixel openings The color filter, the black matrix and the transparent resin layer are sequentially laminated; the array substrate has a second transparent substrate, at least a photosensor is disposed on the second transparent substrate, and an oxide semiconductor is provided as a channel a plurality of active elements and metal wirings of the layer; the black matrix has a transmittance of 50% or more in a detection wavelength region of a light wavelength of 680 nm or more and 800 nm or less, and a wavelength higher than 50% or more of the transmittance The longer wavelength side has a transmissive property of higher transmittance, and has an overlapping portion overlapping with any of the red layer, the green layer, and the blue layer; and the sensor includes the above The sensitivity region of the detection wavelength region is formed at a position closer to the liquid crystal layer than the active device, and is formed by overlapping the black matrix in a plan view of the opposite substrate; , At least its surface made of copper or a copper-based alloy, by the plan view of the substrate, a buried region formed based and the optical sensor overlaps. A liquid crystal display device comprising: a liquid crystal panel in which a counter substrate and an array substrate are opposed to each other via a liquid crystal layer; and the counter substrate has a first transparent substrate on the first transparent substrate At least a black matrix with a plurality of pixel openings a color filter having a color layer of a red layer, a green layer, and a blue layer in each of the plurality of pixel openings, and a transparent resin layer sequentially stacked; the array substrate has a second transparent substrate a photosensor, at least a plurality of active devices including a oxide semiconductor as a channel layer, and a metal wiring are disposed on the second transparent substrate; and the black matrix has a detection wavelength region of a light wavelength of 680 nm or more and 800 nm or less. The transmittance is 50% or more, and the wavelength side having a transmittance higher than 50% or more has a penetration characteristic which is higher in transmittance, and has the red layer and the green layer. And a superimposed portion of the blue layer; wherein the sensor has a sensitivity region including the detection wavelength region, and is located closer to the liquid crystal layer than the active device, and is viewed from the opposite substrate in a plan view The metal wiring is formed to overlap with the black matrix; at least the surface of the metal wiring is made of copper or a copper alloy, and when viewed from the opposite substrate, it is formed to be buried and the photosensor is heavy. Area. The liquid crystal display device according to any one of claims 1 to 3, wherein the black matrix contains a plurality of organic pigments as main color materials. The liquid crystal display device according to any one of claims 1 to 3, wherein the oxide semiconductor is selected from two or more kinds of composite metal oxides of gallium, indium, zinc, antimony, tin, antimony, titanium, antimony or bismuth. . The liquid crystal display device of claim 2 or 3, wherein the color filter is at a position where the red layer overlaps with the black matrix, a position at which the green layer overlaps the black matrix, and the blue layer and the black matrix Each of the overlapping positions has the overlapping portion, and the photo sensor is provided in a view of the lower portion of the red layer, the green layer, and the individual colored pixels of the blue layer, and the lower portion of the overlapping portion. The liquid crystal display device according to any one of claims 1 to 3, further comprising a backlight unit disposed on a side opposite to the opposite substrate of the liquid crystal cell to emit light of at least a longer wavelength region than 680 nm. The liquid crystal display device according to any one of claims 1 to 3, further comprising a photo sensor formed by overlapping the pixel opening portion in a plan view of the opposite substrate, at least in the visible light region Sensitivity zone.